CN113419406B - Dynamic gas isolation device and extreme ultraviolet lithography equipment - Google Patents
Dynamic gas isolation device and extreme ultraviolet lithography equipment Download PDFInfo
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- CN113419406B CN113419406B CN202110663239.7A CN202110663239A CN113419406B CN 113419406 B CN113419406 B CN 113419406B CN 202110663239 A CN202110663239 A CN 202110663239A CN 113419406 B CN113419406 B CN 113419406B
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- 238000002955 isolation Methods 0.000 title claims abstract description 53
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 29
- 238000011086 high cleaning Methods 0.000 claims abstract description 18
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 7
- 230000005764 inhibitory process Effects 0.000 abstract description 5
- 238000002834 transmittance Methods 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 description 10
- 230000003749 cleanliness Effects 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a dynamic gas isolation device and extreme ultraviolet light equipment, wherein the dynamic gas isolation device comprises an isolation pipeline and a gas supply device; the isolation pipeline comprises expansion pipeline sections and equal-section pipeline sections which are arranged at intervals, wherein the section width of the expansion pipeline sections is gradually increased along the direction away from the equal-section pipeline sections, the section width of the equal-section pipeline sections is kept unchanged along the direction away from the expansion pipeline sections, and an air inlet is formed between the expansion pipeline sections and the equal-section pipeline sections in a penetrating manner; the air supply device comprises a high-purity air source and a connecting pipeline, and two ends of the connecting pipeline are respectively communicated with the air inlet and the high-purity air source; the expansion pipeline section is communicated into the high cleaning cavity, and the constant-section pipeline section is communicated into the secondary cleaning cavity. The inner section width of the equal section pipeline section is unchanged, so that the air flow flowing into the equal section pipeline section is increased, the inhibition effect of the isolation pipeline is improved, the air flow is not required to be increased, the pressure is low, and the light beam transmittance is improved.
Description
Technical Field
The invention relates to the technical field of photoetching, in particular to a dynamic gas isolation device and extreme ultraviolet photoetching equipment.
Background
Extreme ultraviolet lithography is the dominant lithography technology for nodes 7nm and below. Extreme ultraviolet lithography uses 13.5nm wavelength extreme ultraviolet light. Since air and almost all refractive optical materials have a strong absorption effect on Extreme Ultraviolet (EUV) radiation having a wavelength of 13.5nm, the interior of the EUV lithography machine needs to be set to a vacuum environment. The EUV illumination optical system, the imaging optical system, the mask table, the workpiece table and other component systems are all arranged in the corresponding vacuum cavities. The vacuum chambers are in communication with each other due to the transmission requirements of the extreme ultraviolet light beam. The individual components or systems have different requirements for the cleanliness of the vacuum environment, for example: the imaging optical system and the illumination optical system have the highest requirements on the cleanliness, the mask table has the second highest requirements on the cleanliness, and the workpiece table has the low requirements on the cleanliness. It is therefore necessary to establish a dynamic gas isolation device (known as a dynamic gas lock) between a high-cleanliness vacuum environment and a sub-cleanliness vacuum environment to isolate the vacuum environments from the two different vacuum requirements.
The cleaning air flow introduced into the dynamic air lock flows to the high cleaning vacuum chamber and the low cleaning vacuum chamber respectively, and the air flow flowing to the low cleaning vacuum chamber can inhibit the transmission of pollutants to the high cleaning vacuum chamber. In the prior art, convergent pipelines are used for isolating the polluted gas, and clean gas with larger air flow is used for pollution control. As the air flow increases, the dynamic gas lock internal flow field can reach sonic or supersonic velocity. The sonic flow maintains sonic velocity in the convergent tube; the speed of the supersonic flow in the convergent tube is continuously reduced to the sonic speed; meanwhile, the convergent type pipeline is not beneficial to the flow of the cleaning gas to the low-cleaning vacuum environment, so that the use efficiency of the cleaning gas is reduced. Is unfavorable for further improvement of the inhibition efficiency of the polluted gas. Meanwhile, the continuous increase of the gas pressure in the convergence pipeline can reduce the transmittance of EUV light beams and influence the exposure power. When the total pressure of the gas is higher, the pressure of the gas at the outlet of the converging tube is higher than the pressure outside the tube, the gas is in a supercritical working state, rapid expansion can occur outside the tube, unstable air flow and temperature change are caused, the non-uniformity of EUV light beams and the thermal deformation of the surface of the silicon wafer are affected, and the exposure quality is further affected.
Disclosure of Invention
The invention mainly aims to provide a dynamic gas isolation device and extreme ultraviolet lithography equipment, and aims to solve the problem of low gas use efficiency of the dynamic gas isolation device.
To achieve the above object, the present invention provides a dynamic gas isolation device, comprising:
the isolation pipeline comprises expansion pipeline sections and equal-section pipeline sections which are arranged at intervals, wherein the section width of the expansion pipeline sections is gradually increased along the direction away from the equal-section pipeline sections, the section width of the equal-section pipeline sections is kept unchanged along the direction away from the expansion pipeline sections, and an air inlet is formed between the expansion pipeline sections and the equal-section pipeline sections in a penetrating manner; the method comprises the steps of,
the air supply device comprises a high-purity air source and a connecting pipeline, and two ends of the connecting pipeline are respectively communicated with the air inlet and the high-purity air source;
wherein, the expansion pipeline section is communicated to the high cleaning cavity, and the constant section pipeline section is communicated to the secondary cleaning cavity.
Optionally, the isolation pipeline further comprises a buffer section arranged at the end part of the equal-section pipeline section, wherein the buffer section is arranged along the direction away from the equal-section pipeline section, and the section width is gradually increased.
Optionally, an accelerating structure is disposed in the connecting pipe, and the accelerating structure is used for increasing the gas flow rate in the connecting pipe.
Optionally, the connecting pipe includes a laval pipe section, a narrow throat is formed in the middle of the laval pipe section, the diameters of the sections of the laval pipe section on two sides of the narrow throat are gradually increased along the direction away from the narrow throat, two ends of the laval pipe section are respectively communicated with a high-purity air source and an air inlet, and the laval pipe section forms an accelerating structure.
Optionally, the connecting pipe section further includes a connecting section, the connecting section is disposed between the laval pipe section and the air inlet, and the cross-sectional diameter of the connecting section is gradually increased along a direction away from the laval pipe section.
Optionally, the inner side wall of the connecting section is arc-shaped.
Optionally, a plurality of air inlets are arranged, and the plurality of air inlets are arranged at intervals along the circumferential direction of the isolation pipeline;
the air supply device is provided with a plurality of air inlets.
Optionally, two air inlets are arranged, and the two air inlets are symmetrically arranged along the axis of the isolation pipeline;
the air supply device is provided with two corresponding air inlets.
Alternatively, the cross section of the isolation tube is circular or rectangular.
The present invention also provides an extreme ultraviolet lithography apparatus comprising:
a high cleaning chamber;
the secondary cleaning cavity is internally provided with an air release source; the method comprises the steps of,
the dynamic gas isolation device is arranged between the high cleaning cavity and the secondary cleaning cavity and is the dynamic gas isolation device.
In the technical scheme provided by the invention, the isolation pipeline comprises an expansion pipeline section and a constant-section pipeline section, wherein the expansion pipeline section is communicated into the high cleaning cavity, the constant-section pipeline section is communicated into the secondary cleaning cavity, the high-purity gas source and the connecting pipeline are used for supplying gas into the isolation pipeline, one part of the gas flows into the expansion pipeline section, the other part of the gas flows into the constant-section pipeline section, and the polluted gas in the secondary cleaning cavity is inhibited from flowing into the high cleaning cavity from the isolation pipeline; meanwhile, the expanding pipeline section ensures the passage of continuous contracted light beams, the cross section width in the equal cross section pipeline section is unchanged, so that the air flow flowing into the equal cross section pipeline section is increased, the inhibition effect of the isolation pipeline is improved, the air flow is not required to be increased, the pressure is low, and the light beam transmittance is improved.
Drawings
FIG. 1 is a schematic plan view of a dynamic gas isolation device according to an embodiment of the present invention;
fig. 2 is an enlarged schematic view of the structure at a in fig. 1.
Reference numerals illustrate:
| reference numerals | Name of the name | Reference numerals | Name of the name |
| 100 | Dynamic gas isolation device | 22 | Connecting pipeline |
| 11 | Expanding pipe section | 221 | Narrow throat |
| 12 | Constant section pipeline section | 222 | Interface section |
| 13 | Air inlet | 200 | High cleaning cavity |
| 14 | Buffer section | 300 | Secondary cleaning cavity |
| 21 | High purity air source |
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
In the case where a directional instruction is involved in the embodiment of the present invention, the directional instruction is merely used to explain the relative positional relationship, movement condition, etc. between the components in a specific posture, and if the specific posture is changed, the directional instruction is changed accordingly.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
Extreme ultraviolet lithography is the dominant lithography technology for nodes 7nm and below. Extreme ultraviolet lithography uses 13.5nm wavelength extreme ultraviolet light. Since air and almost all refractive optical materials have a strong absorption effect on Extreme Ultraviolet (EUV) radiation having a wavelength of 13.5nm, the interior of the EUV lithography machine needs to be set to a vacuum environment. The EUV illumination optical system, the imaging optical system, the mask table, the workpiece table and other component systems are all arranged in the corresponding vacuum cavities. The vacuum chambers are in communication with each other due to the transmission requirements of the extreme ultraviolet light beam. The individual components or systems have different requirements for the cleanliness of the vacuum environment, for example: the imaging optical system and the illumination optical system have the highest requirements on the cleanliness, the mask table has the second highest requirements on the cleanliness, and the workpiece table has the low requirements on the cleanliness. It is therefore necessary to establish a dynamic gas isolation device (known as a dynamic gas lock) between a high-cleanliness vacuum environment and a sub-cleanliness vacuum environment to isolate the vacuum environments from the two different vacuum requirements.
The cleaning air flow introduced into the dynamic air lock flows to the high cleaning vacuum chamber and the low cleaning vacuum chamber respectively, and the air flow flowing to the low cleaning vacuum chamber can inhibit the transmission of pollutants to the high cleaning vacuum chamber. In the prior art, convergent pipelines are used for isolating the polluted gas, and clean gas with larger air flow is used for pollution control. As the air flow increases, the dynamic gas lock internal flow field can reach sonic or supersonic velocity. The sonic flow maintains sonic velocity in the convergent tube; the speed of the supersonic flow in the convergent tube is continuously reduced to the sonic speed; meanwhile, the convergent type pipeline is not beneficial to the flow of the cleaning gas to the low-cleaning vacuum environment, so that the use efficiency of the cleaning gas is reduced. Is unfavorable for further improvement of the inhibition efficiency of the polluted gas. Meanwhile, the continuous increase of the gas pressure in the convergence pipeline can reduce the transmittance of EUV light beams and influence the exposure power. When the total pressure of the gas is higher, the pressure of the gas at the outlet of the converging tube is higher than the pressure outside the tube, the gas is in a supercritical working state, rapid expansion can occur outside the tube, unstable air flow and temperature change are caused, the non-uniformity of EUV light beams and the thermal deformation of the surface of the silicon wafer are affected, and the exposure quality is further affected.
The invention provides an extreme ultraviolet lithography apparatus, which comprises a dynamic gas isolation device, and is within the scope of the invention as long as the extreme ultraviolet lithography apparatus comprises the dynamic gas isolation device, wherein fig. 1 to 2 are embodiments provided by the invention.
Referring to fig. 1, the present invention provides a dynamic gas isolation device 100, which includes an isolation pipe and a gas supply device; the isolation pipeline comprises expansion pipeline sections 11 and equal-section pipeline sections 12 which are arranged at intervals, the section width of the expansion pipeline sections 11 is gradually increased along the direction away from the equal-section pipeline sections 12, the section width of the equal-section pipeline sections 12 is kept unchanged along the direction away from the expansion pipeline sections 11, and an air inlet 13 is formed between the expansion pipeline sections 11 and the equal-section pipeline sections 12 in a penetrating manner; the air supply device comprises a high-purity air source 21 and a connecting pipeline 22, and two ends of the connecting pipeline 22 are respectively communicated with the air inlet 13 and the high-purity air source 21; wherein the expanded pipe section 11 is connected to the high cleaning chamber 200 and the constant section pipe section 12 is connected to the secondary cleaning chamber 300.
In the technical scheme provided by the invention, the isolation pipeline comprises an expansion pipeline section 11 and a constant section pipeline section 12, wherein the expansion pipeline section 11 is communicated into the high cleaning cavity 200, the constant section pipeline section 12 is communicated into the secondary cleaning cavity 300, gas is supplied into the isolation pipeline through the high-purity gas source 21 and the connecting pipeline 22, one part of the gas flows into the expansion pipeline section 11, the other part flows into the constant section pipeline section 12, and the polluted gas in the secondary cleaning cavity 300 is inhibited from flowing into the high cleaning cavity 200 from the isolation pipeline; meanwhile, the expanding pipeline section 11 ensures the passage of the continuous contracted light beam, and the inner cross section width of the constant cross section pipeline section 12 is unchanged, so that the air flow flowing into the constant cross section pipeline section 12 is increased, the inhibition effect of the isolation pipeline is improved, the air flow is not required to be increased, the pressure is low, and the light beam transmittance is improved.
Further, in order to alleviate the expansion phenomenon of the clean gas at the outlet, the isolation pipeline further comprises a buffer section 14 arranged at the end part of the constant section pipeline section 12, wherein the buffer section 14 is arranged in a gradually increasing manner along the direction away from the constant section pipeline section 12. By the buffer section 14, the gas output from the constant section pipeline section 12 expands to have a buffer period, so that the gas expansion phenomenon caused by the fact that the pressure of the gas in the constant section pipeline section 12 is higher than that of the secondary cleaning cavity 300 is relieved, and the influence of the gas on the temperature of components in the area near the dynamic gas isolation device 100 is relieved.
In addition, an accelerating structure is disposed in the connecting pipe 22, and the accelerating structure is used to increase the flow rate of the gas in the connecting pipe 22. The gas in the connecting duct 22 is accelerated to a supersonic state, and the cross-sectional width of the cross-sectional duct section 12 is unchanged, so that the gas is accelerated to a supersonic state before entering the cross-sectional duct section 12, and the gas flow flowing to the secondary cleaning chamber 300 is guaranteed to be supersonic.
Various embodiments of the accelerating structure are provided, for example, a device such as a high-pressure nozzle is provided in the connecting duct 22, and the gas in the connecting duct 22 is accelerated by jetting a gas flow or the like.
Specifically, referring to fig. 2, in this embodiment, the connection pipe 22 includes a laval pipe section, a narrow throat 221 is formed in the middle of the laval pipe section, the diameters of the sections of the laval pipe section located at two sides of the narrow throat 221 are gradually increased along the direction away from the narrow throat 221, two ends of the laval pipe section are respectively connected to the high-purity air source 21 and the air inlet 13, and the laval pipe section forms the accelerating structure. Through the Laval pipeline section, the speed of the air flow is changed due to the change of the spray sectional area, and the air flow is accelerated from subsonic speed to sonic speed until the air flow is accelerated to supersonic speed; as the gas from the source 21 passes through the segments of the laval tubing, the gas movement follows the principle of "the flow velocity at small cross-section is large and the flow velocity at large cross-section is small" and therefore the gas is continually accelerated. When the narrow throat 221 is reached, the velocity has exceeded the sonic velocity. While transonic fluid does not follow the principle of "large flow rate at small section and small flow rate at large section" when moving, but rather the opposite is true, the larger the section, the faster the flow rate. The velocity of the gas is further accelerated until a supersonic velocity is reached.
Further, the connecting pipe 22 further includes a connecting section 222, the connecting section 222 is disposed between the laval pipe section and the air inlet 13, and the cross-sectional diameter of the connecting section 222 is gradually increased along a direction away from the laval pipe section 13. The stability of the gas flow can be ensured, on one hand, the loss of speed during the flow is reduced, and on the other hand, the temperature change caused by the gas expansion is relieved.
Further, in the present embodiment, the inner side wall of the connecting section 222 is disposed in an arc shape. The transition is more stable. The specific arc diameter is adjusted according to the structures of the dynamic gas isolation device 100 and the high purity gas source 21.
On the other hand, in order to secure the use effect of the dynamic gas isolation device 100, the gas inlets 13 are provided in plurality, and the plurality of gas inlets 13 are arranged at intervals along the circumferential direction of the isolation pipe; the air supply means is provided in plurality corresponding to the air inlets 13. Thereby ensuring the stability of the gas flow and the sufficiency of the gas and ensuring the normal use of the dynamic gas barrier device 100.
It should be noted that, the arrangement of the air inlets 13 may be selected according to practical situations, and in the embodiment provided by the present invention, two air inlets 13 are provided, and the two air inlets 13 are symmetrically arranged along the axis of the isolation pipe; two air supply devices are provided corresponding to the air inlets 13.
In addition, the cross section of the isolation pipeline has various embodiments, and the cross section of the isolation pipeline is circular or rectangular. For a conical beam, the dynamic gas barrier 100 takes a circular cross-section; for rectangular beams, the dynamic gas barrier device 100 employs a rectangular cross-section.
The present invention also provides an euv lithography apparatus, which includes the above-mentioned dynamic gas isolation device 100, and the euv lithography apparatus includes all technical features of the above-mentioned dynamic gas isolation device 100, that is, has technical effects brought by all the above-mentioned technical features, which are not described herein again.
The euv lithography apparatus further includes a high cleaning chamber 200 and a sub-cleaning chamber 300; an air discharge source 3 is provided in the sub-cleaning chamber 300.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.
Claims (9)
1. A dynamic gas barrier device, comprising:
the isolation pipeline comprises expansion pipeline sections and equal-section pipeline sections which are arranged at intervals, wherein the section width of the expansion pipeline sections is gradually increased along the direction away from the equal-section pipeline sections, the section width of the equal-section pipeline sections is kept unchanged along the direction away from the expansion pipeline sections, and an air inlet is formed between the expansion pipeline sections and the equal-section pipeline sections in a penetrating manner; the method comprises the steps of,
the gas supply device comprises a high-purity gas source and a connecting pipeline, wherein two ends of the connecting pipeline are respectively communicated with the gas inlet and the high-purity gas source, an accelerating structure is arranged in the connecting pipeline, and the accelerating structure is used for increasing the gas flow rate in the connecting pipeline;
the expansion pipeline section is communicated into the high cleaning cavity, and the constant-section pipeline section is communicated into the secondary cleaning cavity.
2. The dynamic gas isolation device of claim 1, wherein the isolation tube further comprises a buffer section disposed at an end of the constant section tube section, the buffer section having a gradually increasing cross-sectional width in a direction away from the constant section tube section.
3. The dynamic gas isolation device according to claim 1, wherein the connecting pipeline comprises a Laval pipeline section, a narrow throat is formed in the middle of the Laval pipeline section, the cross-sectional diameters of the Laval pipeline section on two sides of the narrow throat are gradually increased along the direction away from the narrow throat, two ends of the Laval pipeline section are respectively communicated with the high-purity gas source and the gas inlet, and the Laval pipeline section forms the accelerating structure.
4. A dynamic gas barrier unit according to claim 3, wherein the connecting pipe further comprises an interface section provided between the laval pipe section and the gas inlet, the cross-sectional diameter of the interface section being gradually increased in a direction away from the laval pipe section.
5. The dynamic gas barrier unit of claim 4, wherein the inner side walls of the interface section are arcuate.
6. The dynamic gas barrier unit according to claim 1, wherein a plurality of the gas inlets are provided, and a plurality of the gas inlets are provided at intervals along the circumferential direction of the barrier pipe;
the air supply device is provided with a plurality of air inlets.
7. The dynamic gas isolation device of claim 6, wherein two of said gas inlets are symmetrically disposed along the axis of said isolation tube;
the air supply device is provided with two corresponding air inlets.
8. The dynamic gas barrier unit of claim 1, wherein the barrier pipes are circular or rectangular in cross-section.
9. An extreme ultraviolet lithography apparatus, comprising:
a high cleaning chamber;
the secondary cleaning cavity is internally provided with an air release source; the method comprises the steps of,
a dynamic gas isolation device disposed between the high cleaning chamber and the secondary cleaning chamber, the dynamic gas isolation device being as claimed in any one of claims 1 to 8.
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| CN202110663239.7A CN113419406B (en) | 2021-06-15 | 2021-06-15 | Dynamic gas isolation device and extreme ultraviolet lithography equipment |
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| CN202110663239.7A CN113419406B (en) | 2021-06-15 | 2021-06-15 | Dynamic gas isolation device and extreme ultraviolet lithography equipment |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11283550A (en) * | 1998-03-30 | 1999-10-15 | Jeol Ltd | Air-lock valve of electron-beam drawing device |
| CN108398858A (en) * | 2018-03-20 | 2018-08-14 | 李笛 | A kind of gas isolator and partition method |
| CN111965950A (en) * | 2020-08-25 | 2020-11-20 | 中国科学院微电子研究所 | Dynamic gas isolation device |
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- 2021-06-15 CN CN202110663239.7A patent/CN113419406B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11283550A (en) * | 1998-03-30 | 1999-10-15 | Jeol Ltd | Air-lock valve of electron-beam drawing device |
| CN108398858A (en) * | 2018-03-20 | 2018-08-14 | 李笛 | A kind of gas isolator and partition method |
| CN111965950A (en) * | 2020-08-25 | 2020-11-20 | 中国科学院微电子研究所 | Dynamic gas isolation device |
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| CN113419406A (en) | 2021-09-21 |
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