CN113410398A - Method for preparing perovskite photoelectric detector by anti-solvent one-step method - Google Patents
Method for preparing perovskite photoelectric detector by anti-solvent one-step method Download PDFInfo
- Publication number
- CN113410398A CN113410398A CN202110659473.2A CN202110659473A CN113410398A CN 113410398 A CN113410398 A CN 113410398A CN 202110659473 A CN202110659473 A CN 202110659473A CN 113410398 A CN113410398 A CN 113410398A
- Authority
- CN
- China
- Prior art keywords
- perovskite
- solvent
- annealing
- thin film
- photoelectric detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012296 anti-solvent Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 31
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 claims abstract description 47
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 19
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000012080 ambient air Substances 0.000 claims description 5
- 230000005525 hole transport Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 3
- 239000000383 hazardous chemical Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical group C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a method for preparing a perovskite photoelectric detector by an anti-solvent one-step method. The detector prepared by the invention has the optical power density of 6.37 mu W/cm2Under the condition of irradiating the 532nm laser diode and biasing at-2V, the responsivity reaches 1.56A/W and the detectivity reaches 1.47 multiplied by 1012Jones, linear dynamic range reaches 110 dB. In addition, compared with the traditional anti-solvent, the tert-amyl alcohol has low manufacturing cost and is not controlled by hazardous chemicals, and reference is provided for preparing the high-performance vertical-structure perovskite photoelectric detector.
Description
Technical Field
The invention relates to the field of photoelectron materials and devices, in particular to a method for preparing a perovskite photoelectric detector by using an anti-solvent one-step method.
Background
The photoelectric detector can convert a light signal which is difficult to quantify into an electric signal which can be accurately detected, and plays a great role in industrial and scientific research, such as imaging, optical communication, chemical/biological sensing, environmental monitoring and the like. For photodetectors, the most important is the semiconductor material. The semiconductor material acts as a photoactive layer, capable of absorbing photon energy and generating photogenerated carriers (electron-hole pairs). These separated electrons and holes are transported to both ends of the electrode under the action of an internal electric field or an external bias voltage to generate a current signal. Currently, the commercial detectors mainly use inorganic semiconductor materials, such as GaN, Si, and InGaAs. The detectors have the advantages of mature preparation industry, clear working mechanism and the like, but the preparation processes are complex and expensive, and the driving voltage is high, so that the application range of the detectors is limited. Over the past decade or so, low-cost, solution-processable photovoltaic materials, such as organic materials, nanomaterials and nanocomposites, have shown great potential for application in the field of flexible large area detectors. However, these materials also have some considerable disadvantages, which have influenced their further development. Recently, perovskite materials have been widely used in solar cell, LED, laser and photodetector research due to their unique advantages of high carrier mobility, high light absorption coefficient, long carrier diffusion length, adjustable direct band gap, etc. The vertical-structure photoelectric detector has the advantages of short carrier transmission distance, fast frequency response, linear correlation between photocurrent and incident light intensity and the like, so that the vertical-structure photoelectric detector is very suitable for the fields of visible light communication and imaging.
The most important factors that have been reported to affect the performance of perovskite detectors are poor film quality and defects present at the surface and grain boundaries of the perovskite film. Therefore, it is important to find a way to effectively enhance the quality of the film. In order to better regulate the film-forming quality of the film, a very useful way is to add an anti-solvent, such as toluene, chlorobenzene, and other mixed anti-solvents, etc. dropwise in the perovskite spin-coating process, so that the perovskite nucleation and crystal growth processes can be effectively regulated, and the uniform, compact and pore-free perovskite film can be obtained. The anti-solvent used in the method is tert-amyl alcohol, and compared with the traditional anti-solvents, the tert-amyl alcohol serving as the anti-solvent has the advantages of better device performance, low toxicity, low cost, easiness in obtaining and the like, so that the method has more advantages compared with the traditional anti-solvents.
Disclosure of Invention
The invention provides a method for preparing a perovskite photoelectric detector by an anti-solvent one-step method, overcomes the defects of strong toxicity of the traditional anti-solvent, controlled solvent, difficult obtainment and the like, and obtains the device performance superior to the device performance of the traditional anti-solvent participating in preparation.
The technical scheme for realizing the invention is as follows:
the perovskite photoelectric detector comprises a conductive substrate, a hole transport layer, a perovskite thin film, an electron transport layer and a metal electrode, wherein the perovskite thin film is prepared by using an anti-solvent.
The anti-solvent is tert-amyl alcohol.
Preferably, the transparent conductive substrate can be ITO conductive glass, and can also be FTO or AZO, TCO.
Preferably, the hole transport layer is PEDOT PSS.
Preferably, the electron transport layer is PC61BM and BCP.
Preferably, the metal electrode may be gold, silver.
The optical power density of the perovskite photoelectric detector is 6.37 mu W/cm2Under the condition of irradiating the 532nm laser diode and biasing at-2V, the responsivity reaches 1.56A/W and the detectivity reaches 1.47 multiplied by 1012Jones, linear dynamic range reaches 110 dB.
The perovskite thin film is prepared by the following specific steps:
s1: preparing a perovskite precursor solution;
s2: dropwise adding a tert-amyl alcohol anti-solvent in the spin coating process of the perovskite precursor solution;
s3: and carrying out thermal annealing and solvent annealing treatment in sequence to obtain the perovskite thin film.
The perovskite in step S1 is CH3NH3PbI3。
The volume ratio of the perovskite precursor solution to the tertiary amyl alcohol antisolvent in the step S2 is 1 (2-3), and the perovskite precursor solution is spin-coated at 6000rpm for 30-60S.
And (S2) pre-annealing for 10-15S on a heating table after the spin coating is finished, taking out the sample, heating and annealing under the ambient air condition, and then continuously annealing for 10 minutes in a DMSO atmosphere to obtain the perovskite thin film.
The pre-annealing is carried out in a glove box protected by nitrogen, and the heating annealing temperature in the ambient air is 80-100 ℃ and the time is 10-30 min.
The invention has the beneficial effects that: the detector prepared by the invention has the optical power density of 6.37 mu W/cm2Under the condition of irradiating the 532nm laser diode and biasing at-2V, the responsivity reaches 1.56A/W and the detectivity reaches 1.47 multiplied by 1012Jones, linear dynamic range reaches 110 dB. In addition, compared with the traditional anti-solvent, the tert-amyl alcohol has low manufacturing cost and is not controlled by hazardous chemicals, and reference is provided for preparing the high-performance vertical-structure perovskite photoelectric detector.
The tert-amyl alcohol anti-solvent adopted by the invention has moderate polarity, and can effectively remove redundant DMF and DMSO solvent in the precursor solution in the dropping process, thereby accelerating homogeneous nucleation of perovskite and growth of perovskite crystal grains, and then obtaining a uniform, compact and pore-free high-quality perovskite thin film through high-temperature annealing and solvent annealing processes, thereby obtaining a high-performance vertical structure photoelectric detector.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of the device structure of a perovskite photodetector.
FIG. 2 is a flow chart of perovskite thin film preparation using t-amyl alcohol as an anti-solvent.
FIG. 3 is an XRD pattern of a perovskite thin film prepared using t-amyl alcohol as an anti-solvent.
FIG. 4 is a scanning electron micrograph of a perovskite thin film prepared using t-amyl alcohol as an anti-solvent.
FIG. 5 is a graph of the responsivity of a perovskite photodetector fabricated using t-amyl alcohol as an anti-solvent.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
As shown in fig. 1, the device structure of the perovskite photodetector includes: the ITO conductive substrate, the hole transport layer, the perovskite thin film, the electron transport layer and the metal electrode.
Further, the transparent conductive substrate may be ITO conductive glass.
And furthermore, the hole transport layer is PEDOT PSS.
Further, the electron transport layer is PC61BM and BCP.
Further, the metal electrode may be gold or silver.
Example 1
Weighing a mixture with a molar ratio of 1: 1.05 CH3NH3I powder and PbI2Dissolving the powder in 1ml of mixed solvent of DMF (dimethylformamide) and DMSO (dimethyl sulfoxide) (the volume ratio of DMF to DMSO is 9:1), adding magnetons into the prepared solution, stirring for 12 hours, and reacting fully to obtain a clear yellowish perovskite precursor solution.
100 μ L of the precursor solution was dropped onto the substrate and spun at 6000rpm for 30 s. And (3) dropwise adding 250 mu L of anti-solvent tert-amyl alcohol in the spin coating process in the second step, and pre-annealing on a heating table for 10-15 s after the spin coating is finished, wherein the processes are carried out in a glove box protected by nitrogen. And taking out the sample, heating and annealing at 100 ℃ for 20 minutes under the ambient air condition, and then placing the sample in a DMSO atmosphere to continue annealing for 10 minutes to obtain the perovskite thin film.
As shown in an XRD diagram in FIG. 3, the perovskite thin film prepared by the one-step method by using tertiary amyl alcohol as an anti-solvent has obvious diffraction characteristic peaks at 14.1 degrees, 28.5 degrees and 31.9 degrees, which respectively correspond to 110, 220 and 310 crystal planes of perovskite crystals, and the perovskite thin film is formed, and the result is further proved by an SEM diagram in FIG. 4, and the uniform, dense and pore-free high-quality perovskite thin film is formed.
The preparation process of the perovskite photoelectric detector comprises the following steps: and (3) carrying out ultrasonic treatment on the ITO substrate by using a glass cleaning agent, deionized water, acetone and isopropanol in sequence, and then carrying out ultraviolet ozone treatment for 15 minutes. PSS (PEDOT) is added dropwise on the substrate, and spin coating is carried out at 4000rpm for 40 s. The perovskite thin film was then prepared according to the procedure described in example 1 above, followed by spin coating of PC in sequence61BM (4000rpm spin-on 40s) and BCP (6000rpm spin-on 40s), and finally 100nm Ag by thermal evaporation. The Responsivity (Responsivity) of the perovskite photodetector prepared by using tertiary amyl alcohol as an anti-solvent is 6.37 mu w/cm2The detection degree of the vertical structure perovskite photoelectric detector can reach 1.56A/W under the irradiation of a 532nm laser diode, the detection degree is shown in figure 5, and the detection degree (Detectivity) of the vertical structure perovskite photoelectric detector prepared by using tertiary amyl alcohol as an anti-solvent reaches 1.47 multiplied by 1012Jones, linear dynamic range reaches 110 dB. In addition, compared with the traditional anti-solvent, the tert-amyl alcohol has low manufacturing cost and is not controlled by hazardous chemicals, and reference is provided for preparing the high-performance vertical-structure perovskite photoelectric detector.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (8)
1. A method for preparing a perovskite photoelectric detector by an anti-solvent one-step method is characterized by comprising the following steps: the perovskite photoelectric detector comprises a conductive substrate, a hole transport layer, a perovskite thin film, an electron transport layer and a metal electrode, wherein the perovskite thin film is prepared by using an anti-solvent.
2. The method of claim 1, wherein: the anti-solvent is tert-amyl alcohol.
3. The method of claim 1, wherein: the optical power density of the perovskite photoelectric detector is 6.37 mu W/cm2Under the condition of irradiating the 532nm laser diode and biasing at-2V, the responsivity reaches 1.56A/W and the detectivity reaches 1.47 multiplied by 1012Jones, linear dynamic range reaches 110 dB.
4. The method according to any one of claims 1 to 3, wherein the perovskite thin film is prepared by the following specific steps:
s1: preparing a perovskite precursor solution;
s2: dropwise adding a tert-amyl alcohol anti-solvent in the spin coating process of the perovskite precursor solution;
s3: and carrying out thermal annealing and solvent annealing treatment in sequence to obtain the perovskite thin film.
5. The method of claim 4, wherein: the perovskite in the step S1 is CH3NH3PbI3。
6. The method of claim 4, wherein: the volume ratio of the perovskite precursor solution to the tertiary amyl alcohol antisolvent in the step S2 is 1 (2-3), and the perovskite precursor solution is spin-coated at 6000rpm for 30-60S.
7. The method of claim 4, wherein: and (S2) pre-annealing for 10-15S on a heating table after the spin coating is finished, taking out the sample, heating and annealing under the ambient air condition, and then continuously annealing for 10 minutes in a DMSO atmosphere to obtain the perovskite thin film.
8. The method of claim 7, wherein: and pre-annealing is carried out in a nitrogen-protected glove box, and the heating annealing temperature in the ambient air is 80-100 ℃ for 10-30 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110659473.2A CN113410398A (en) | 2021-06-15 | 2021-06-15 | Method for preparing perovskite photoelectric detector by anti-solvent one-step method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110659473.2A CN113410398A (en) | 2021-06-15 | 2021-06-15 | Method for preparing perovskite photoelectric detector by anti-solvent one-step method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113410398A true CN113410398A (en) | 2021-09-17 |
Family
ID=77683882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110659473.2A Pending CN113410398A (en) | 2021-06-15 | 2021-06-15 | Method for preparing perovskite photoelectric detector by anti-solvent one-step method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113410398A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359246A (en) * | 2017-06-20 | 2017-11-17 | 太原理工大学 | A kind of preparation method of methylamine lead iodine perovskite solar cell |
| CN108217718A (en) * | 2018-03-13 | 2018-06-29 | 南方科技大学 | A kind of ABX3Nanocrystalline synthetic method of perovskite and products thereof and purposes |
| CN111933807A (en) * | 2020-08-28 | 2020-11-13 | 电子科技大学 | High-stability perovskite photoelectric detector prepared based on additive treatment and preparation method thereof |
| US20210166885A1 (en) * | 2018-08-09 | 2021-06-03 | Soochow University | Method for preparing inorganic perovskite battery based on synergistic effect of gradient annealing and antisolvent, and prepared inorganic perovskite battery |
-
2021
- 2021-06-15 CN CN202110659473.2A patent/CN113410398A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359246A (en) * | 2017-06-20 | 2017-11-17 | 太原理工大学 | A kind of preparation method of methylamine lead iodine perovskite solar cell |
| CN108217718A (en) * | 2018-03-13 | 2018-06-29 | 南方科技大学 | A kind of ABX3Nanocrystalline synthetic method of perovskite and products thereof and purposes |
| US20210166885A1 (en) * | 2018-08-09 | 2021-06-03 | Soochow University | Method for preparing inorganic perovskite battery based on synergistic effect of gradient annealing and antisolvent, and prepared inorganic perovskite battery |
| CN111933807A (en) * | 2020-08-28 | 2020-11-13 | 电子科技大学 | High-stability perovskite photoelectric detector prepared based on additive treatment and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| TENGTENG LI等: "Environment-friendly antisolvent tert-amyl alcohol modified hybrid perovskite photodetector with high responsivity", 《PHOTONICS RESEARCH》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | Highly sensitive, fast response perovskite photodetectors demonstrated in weak light detection circuit and visible light communication system | |
| Cao et al. | High-performance UV–vis photodetectors based on electrospun ZnO nanofiber-solution processed perovskite hybrid structures | |
| CN107919409B (en) | One kind being based on CsPbBr3The visible light photodetector and preparation method thereof of full-inorganic perovskite nano wire | |
| CN107204379B (en) | A kind of inorganic perovskite thin film of high quality and preparation method thereof and application in solar cells | |
| Ding et al. | A general wet transferring approach for diffusion-facilitated space-confined grown perovskite single-crystalline optoelectronic thin films | |
| Ding et al. | High-performance stretchable photodetector based on CH 3 NH 3 PbI 3 microwires and graphene | |
| CN109244246B (en) | Broadband photoelectric detector based on topological insulator bismuth selenide electrode | |
| CN108258117B (en) | Stable high-performance perovskite photoelectric detector and preparation method thereof | |
| CN111525036B (en) | Self-driven perovskite photoelectric detector and preparation method thereof | |
| CN109841703B (en) | All-inorganic perovskite photoelectric detector and preparation method thereof | |
| Young et al. | ZnO nanorod humidity sensor and dye-sensitized solar cells as a self-powered device | |
| Srivastava et al. | Pentacene and CuO nanocomposite based self-powered broadband photodetector | |
| CN111864080A (en) | Two-dimensional organic-inorganic hybrid perovskite crystal photoelectric detector and preparation method thereof | |
| CN107768478A (en) | A kind of organic/perovskite bulk-heterojunction nanowire photodiode detector and preparation method thereof | |
| Zhao et al. | Asymmetric au electrodes-induced self-powered organic–inorganic perovskite photodetectors | |
| Zhu et al. | High-performance and stable Sb2S3 thin-film photodetectors for potential application in visible light communication | |
| CN104638109A (en) | Cathode interface material for organic solar cells and preparation method thereof | |
| CN110718633A (en) | Wide-spectrum photoelectric detector based on perovskite-carbon nano tube bulk heterojunction | |
| Young et al. | Pd nanoparticle adsorption ZnO nanorods for enhancing photodetector UV-sensing performance | |
| Imran et al. | Highly efficient and stable inverted perovskite solar cells with two-dimensional ZnSe deposited using a thermal evaporator for electron collection | |
| CN112271259A (en) | Flexible multiplication type organic photoelectric detector and preparation method thereof | |
| CN113410398A (en) | Method for preparing perovskite photoelectric detector by anti-solvent one-step method | |
| Zhao et al. | Atmospheric preparation of ZnO thin films by mist chemical vapor deposition for spray-coated organic solar cells | |
| Guo et al. | Durable and stable UV–Vis perovskite photodetectors based on CH 3 NH 3 PbI 3 crystals synthesized via a solvothermal method | |
| CN111952383B (en) | CsPbBr3-CsPb2Br5Self-driven visible light photoelectric detector of all-inorganic mixed perovskite thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210917 |
|
| RJ01 | Rejection of invention patent application after publication |