CN113410386B - Method for preparing nanowire with M/M-TCNQ Schottky junction - Google Patents
Method for preparing nanowire with M/M-TCNQ Schottky junction Download PDFInfo
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Abstract
A method for preparing a nanowire with an M/M-TCNQ Schottky junction relates to a nanowire preparation method. Pouring PDMS on a silicon substrate, processing a mould hole by the solidified PDMS, depositing an M film, pouring resin in the mould hole, embedding the resin after solidification and stripping to obtain a sample for slicing, carrying out nano slicing on the sample, transferring the sample to a silicon oxide substrate, coating photoresist protection on two ends of an M nanowire by adopting a photoetching process, exposing the middle part of the M nanowire, placing the M nanowire in a TCNQ acetonitrile solution for full reaction to obtain an M/M-TCNQ/M nanowire, coating the photoresist protection on the middle part after removing the photoresist on the two ends, depositing an inert metal film to be used as an extraction electrode, stripping the photoresist and the inert metal film on the middle part, and finally characterizing the nanowire. The M/M-TCNQ Schottky structure can be efficiently and controllably integrated into one nanowire, and the preparation method is simple, high in processing efficiency and good in repeatability.
Description
Technical Field
The invention relates to a nanowire preparation method, in particular to a method for preparing a nanowire with an M/M-TCNQ Schottky junction, and belongs to the technical field of nanowire preparation.
Background
The nano-wire is a one-dimensional nano-material, and the M-TCNQ is a simple charge transfer complex formed by taking a transition metal element M (Ag and Cu) as an electron donor and taking an organic TCNQ as an electron acceptor. The M-TCNQ nanowires have the following characteristics: the material has photoelectric bistability and can be used for preparing a memory switch; the field electron emission performance is excellent, and the ITO/M/M-TCNQ structure has lower field emission starting voltage and larger field emission current density and can be used for preparing a field emission display device; has photochromic effect, and can be used for preparing optical memory device.
The schottky junction is a simple metal to semiconductor interface with excellent rectifying properties. When the metal element M is contacted with the M-TCNQ with the semiconductor property, the metal element M and the M-TCNQ form an M/M-TCNQ Schottky junction at an interface, and the metal element M and the M-TCNQ have the following characteristics: the reverse recovery time is extremely short and can be as short as a few nanoseconds; the forward conduction voltage drop is low and can be as low as about 0.4V; the Schottky diode prepared based on the Schottky junction principle has high rectification current up to thousands of milliamperes, and is commonly used in high-frequency, low-voltage and large-current rectification occasions.
In the preparation of the M/M-TCNQ Schottky junction nano-structure system, the most important thing is the preparation of M-TCNQ. Currently, the main preparation methods of M-TCNQ are divided into two types: one is a wet process represented by a spontaneous electrochemical reaction method, a laser induced growth method, or the like; the second is a dry process represented by a vacuum evaporation method and a vacuum vapor transport reaction method. The former method has the defects of uneven distribution of the nanowire structure, poor size controllability and the like, while the latter method can prepare the nanowire structure with uniform distribution, but has the defects of complex processing equipment, poor size controllability and the like. In addition, the existing preparation technology mostly focuses on the contact of the M-TCNQ nanowire array and the M thin film to obtain an M/MTCNQ system, and the research on the M/M-TCNQ Schottky junction system integrated on the same nanowire is rare. Therefore, how to efficiently and controllably prepare the nano-wire with the M/M-TCNQ Schottky junction has important significance on subsequent scientific research and application thereof.
Disclosure of Invention
In order to solve the problems in the background art, the invention provides a method for preparing a nanowire with an M/M-TCNQ Schottky structure, the M/M-TCNQ Schottky structure can be efficiently and controllably integrated into one nanowire, and the preparation method is simple, high in processing efficiency and good in repeatability.
In order to achieve the purpose, the invention adopts the following technical scheme: a method of preparing nanowires having M/M-TCNQ schottky junctions, comprising the steps of:
the method comprises the following steps: pouring PDMS on a silicon substrate to completely embed the upper surface of the silicon substrate to form a PDMS-silicon composite structure;
step two: processing a die hole reaching the silicon substrate on the cured PDMS;
step three: depositing an M film on the PDMS-silicon composite structure;
step four: pouring resin into the holes of the die, and curing and stripping to obtain an M film-resin composite structure;
step five: embedding the surface of the M film-resin composite structure with resin to obtain a resin-M film-resin composite structure;
step six: performing nano slicing on the resin-M film-resin composite structure serving as a sample for slicing to obtain a resin slice containing M nanowires;
step seven: transferring the resin sheet containing the M nanowire onto a silicon oxide substrate to obtain an M nanowire-silicon oxide substrate composite structure;
step eight: coating photoresist at two ends of the M nanowire on the M nanowire-silicon oxide substrate composite structure by adopting a photoetching process to protect, and exposing the middle part of the M nanowire;
step nine: placing the M nanowire-silicon oxide substrate composite structure with the two ends coated with the photoresist for protection in a TCNQ acetonitrile solution for full reaction to obtain an M/M-TCNQ/M nanowire;
step ten: removing the photoresist coated on the two ends to expose the two ends of the M/M-TCNQ/M nanowire, and then coating the photoresist on the middle part of the M/M-TCNQ/M nanowire for protection by adopting a photoetching process;
step eleven: depositing a layer of inert metal film on the M/M-TCNQ/M nanowire with the middle part coated with the photoresist for protection to be used as an extraction electrode, and then removing the photoresist coated on the middle part and the inert metal film on the photoresist by using a Lift-off process to obtain the M/M-TCNQ/M nanowire with the inert electrodes packaged at two ends;
step twelve: and carrying out X-ray photoelectron spectroscopy (XPS) analysis and Scanning Electron Microscope (SEM) imaging on the M/M-TCNQ/M nanowire with the inert electrodes packaged at the two ends, comparing an XPS analysis map with a standard M-TCNQ map, indicating that an M-TCNQ complex is generated in the middle part if a peak value representing an M-TCNQ element exists, and observing the SEM image to obtain the generation condition of the M-TCNQ complex so as to realize the characterization of the nanowire.
Compared with the prior art, the invention has the beneficial effects that: the invention controllably prepares the M/M-TCNQ/M nanowire with the M/M-TCNQ Schottky junction by combining the nano-slice with the thin film deposition technology, the resin embedding technology, the photoetching technology and the like, the whole preparation process does not need special experimental environment, the size and the shape of the M-TCNQ part in the nanowire are controllable, the whole nanowire can be simply, conveniently and quickly transferred and positioned by a fishing method, the M/M-TCNQ Schottky structure is integrated into one nanowire, the preparation method is simple, the processing efficiency is high, the repeatability is good, the electronic device can be directly cut and assembled without pretreatment, and the rapid preparation of subsequent electrical property experimental samples is facilitated.
Drawings
FIG. 1 is a schematic diagram of the preparation of a sample for sectioning according to the present invention;
FIG. 2 is a schematic illustration of the preparation of a resin sheet containing M nanowires of the present invention;
FIG. 3 is a schematic diagram of the preparation of M/M-TCNQ/M nanowires of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments, and based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without making creative efforts belong to the protection scope of the present invention.
As shown in fig. 1 to 3, a method of preparing a nanowire having an M/M-TCNQ schottky junction includes the steps of:
the method comprises the following steps: pouring PDMS on a silicon substrate to completely embed the upper surface of the silicon substrate to form a PDMS-silicon composite structure;
step two: processing a die hole reaching the silicon substrate on the cured PDMS;
step three: depositing an M film on the PDMS-silicon composite structure, wherein the M film is an Ag film or a Cu film, the thickness of the M film is 100-200 nm, and the deposition method comprises resistance evaporation source evaporation, electron beam evaporation source coating, sputtering coating or ion coating;
step four: pouring resin in the holes of the mould, wherein the resin is preferably thermosetting resin such as epoxy resin, ultraviolet curing adhesive, organic silicon resin or thermosetting acrylic resin, and curing and stripping to obtain an M film-resin composite structure;
step five: embedding the surface of the M film-resin composite structure with resin, wherein the resin is also preferably thermosetting resin such as epoxy resin, ultraviolet curing adhesive, organic silicon resin or thermosetting acrylic resin to obtain a resin-M film-resin composite structure;
step six: performing nano slicing on the resin-M film-resin composite structure serving as a sample for slicing to obtain a resin slice containing M nanowires, wherein the nano slicing is performed by using an ultrathin slicer, firstly, a trimming cutter is used for trimming and polishing one end face of the resin-M film-resin composite structure to expose the end face of the M film embedded in the resin-M film-resin composite structure, then a boss containing the M film is trimmed on the end face, the length of each side of the boss is 0.2-0.6 mm, then, a slicing cutter is used for slicing the boss, the slicing cutter is made of glass materials or diamond materials, a groove solution of a water groove attached to the slicing cutter is deionized water, the slicing speed is 0.1-15 mm/s, and the feeding amount is 50-200 nm;
step seven: transferring the resin sheet containing the M nanowires to a silicon oxide substrate, wherein the resin sheet containing the M nanowires is transferred to the surface of the silicon oxide substrate from deionized water by adopting an annular sheet fishing ring method, a substrate direct sheet fishing method or a substrate dipping method, and is subjected to fine adjustment under a body type microscope according to needs to obtain an M nanowire-silicon oxide substrate composite structure;
step eight: coating photoresist at two ends of the M nanowire on the M nanowire-silicon oxide substrate composite structure by adopting a photoetching process to protect, exposing the middle part of the M nanowire, wherein the photoetching process preferably adopts ultraviolet photoetching or electron beam photoetching, the photoresist adopts negative photoresist when the ultraviolet photoetching is selected, and the photoresist adopts positive photoresist when the electron beam photoetching is selected;
step nine: placing the M nanowire-silicon oxide substrate composite structure with the two ends coated with the photoresist for protection in a TCNQ acetonitrile solution for full reaction to obtain an M/M-TCNQ/M nanowire;
step ten: removing the photoresist coated at the two ends to expose the two ends of the M/M-TCNQ/M nanowire, then coating the middle part of the M/M-TCNQ/M nanowire with photoresist for protection by adopting a photoetching process, preferably adopting ultraviolet photoetching or electron beam photoetching, wherein the photoresist adopts a negative photoresist when the ultraviolet photoetching is adopted, and the photoresist adopts a positive photoresist when the electron beam photoetching is adopted;
step eleven: depositing an inert metal film on the M/M-TCNQ/M nanowire with the middle part coated with the photoresist for protection to be used as an extraction electrode, wherein the inert metal film is a gold film or a platinum film, the thickness of the film is 50-100 nm, the deposition method comprises resistance evaporation source evaporation, electron beam evaporation source coating, sputtering coating or ion coating, and then removing the photoresist coated on the middle part and the inert metal film on the photoresist by using a Lift-off process to obtain the M/M-TCNQ/M nanowire with the two ends packaged with the inert electrodes;
step twelve: and carrying out X-ray photoelectron spectroscopy (XPS) analysis and Scanning Electron Microscope (SEM) imaging on the M/M-TCNQ/M nanowire with the inert electrodes packaged at the two ends, comparing an XPS analysis map with a standard M-TCNQ map, indicating that an M-TCNQ complex is generated in the middle part if a peak value representing an M-TCNQ element exists, and observing the SEM image to obtain the generation condition of the M-TCNQ complex so as to realize the characterization of the nanowire.
The method takes an ultrathin slicer as main processing equipment, and combines a thin film deposition technology, a resin embedding technology, a photoetching technology and the like to controllably prepare the M/M-TCNQ/M nanowire with the M/M-TCNQ Schottky junction.
Example 1: cu/Cu-TCNQ/Cu nanowire
Preparation of sample for slicing
(1) Pouring a PDMS prepolymer on a silicon substrate to ensure that the upper surface of the silicon substrate is completely embedded in the PDMS prepolymer to form a PDMS-silicon composite structure, wherein the thickness of the PDMS prepolymer is about 1.5mm, mixing PDMS and a curing agent according to the mass ratio of 10;
(2) Processing a die hole reaching the silicon substrate on the cured PDMS by using an art designing knife, wherein the size of the die hole is 2cm multiplied by 2cm;
(3) Placing the PDMS-silicon composite structure with the processed mold hole in a vacuum coating system, and depositing a Cu film by a magnetron sputtering method under the condition that the vacuum degree is 0.5Pa, wherein the deposition rate is 0.5-0.6 nm/s, and the thickness of the prepared Cu film is 150nm;
(4) Pouring the Epo-fix epoxy resin prepolymer into the holes of the die, so that the holes are just filled with the Epo-fix epoxy resin prepolymer, curing and stripping to obtain a Cu film-resin composite structure, mixing the Epo-fix epoxy resin prepolymer and a curing agent according to a mass ratio of 25 to 3, slowly stirring in a single direction for 2min, heating in a 60 ℃ drying oven for 3min, degassing in a vacuum inlaying machine for 15min, and finally curing in the 60 ℃ drying oven for 3 hours;
(5) Cutting the Cu film-resin composite structure into a proper size, then placing the Cu film-resin composite structure into a silica gel embedding mold, pouring Epo-fix epoxy resin prepolymer, and finally placing the obtained product into an oven at 60 ℃ for curing for 3 hours to obtain a cuboid resin-Cu film-resin composite structure with the size of 14 multiplied by 5 multiplied by 3mm (length multiplied by width multiplied by height) as a sample for slicing.
Preparation of Cu nanowire by nano-slicing method
Putting the obtained sample for slicing into a clamp, adopting an ultra-thin slicer to perform block trimming and slicing to obtain a resin slice containing the Cu nanowires, firstly, polishing the end face of the sample by using a block trimming cutter until the end face of the Cu film is exposed, then trimming the end face to form a square boss containing the Cu film, wherein each side length is about 0.6mm, using a linear edge diamond slicing cutter with deionized water tank liquid to slice the boss, setting the slicing speed to be 0.5mm/s and the feeding amount to be 200nm, and obtaining the resin slice containing the Cu nanowires with the thickness of 200nm.
Transfer and conditioning of Cu nanowires
And fishing the resin thin sheet containing the Cu nanowires from the deionized water tank liquor by adopting an annular sheet fishing ring carried by the ultrathin slicer, transferring the resin thin sheet to the surface of the hydrophilic silicon oxide substrate, and then carrying out micro-adjustment by using a hair fiber pen under a body type microscope to obtain the Cu nanowire-silicon oxide substrate composite structure.
Partial coating and exposure of Cu nanowires
(1) Placing the Cu nanowire-silicon oxide substrate composite structure on a heating table, and heating for 2min at the temperature of 110 ℃;
(2) Placing the Cu nanowire on a spin coater after heating, dropping a little of negative photoresist at two ends of the Cu nanowire, and then carrying out rotary spin coating, wherein the spin coating speed is 1000r/min, and the spin coating time is 30s;
(3) After the glue homogenizing is finished, placing the glue on a heating table again to be heated for 2min, wherein the heating temperature is 110 ℃;
(4) Carrying out exposure by adopting ultraviolet lithography, wherein the exposure time is 5s;
(5) And developing to obtain a Cu nanowire-silicon oxide substrate composite structure with two ends coated with photoresist for protection and the middle part exposed.
Preparation of Cu/Cu-TCNQ/Cu nanowire
Placing the Cu nanowire-silicon oxide substrate composite structure with the two ends coated with the photoresist protection into a TCNQ acetonitrile solution with the concentration of 99.9%, reacting for 15min at room temperature, taking out, placing in the acetonitrile solution to wash away residual liquid, fully reacting the exposed middle part of the Cu nanowire with the TCNQ acetonitrile solution to generate a Cu-TCNQ complex, and maintaining the parts coated with the photoresist protection at the two ends as original shapes to obtain the Cu/Cu-TCNQ/Cu nanowire.
Preparation of extraction electrode
(1) Removing the negative photoresist at two ends of the Cu/Cu-TCNQ/Cu nanowire by adopting a wet method, then coating the negative photoresist on the middle part by adopting ultraviolet lithography again for secondary lithography, wherein the coating range comprises the Cu-TCNQ at the middle part and the Cu at two sides of the Cu-TCNQ/Cu nanowire, and the Cu at two ends of the Cu/Cu-TCNQ/Cu nanowire is exposed;
(2) Then placing the film in a vacuum coating system at 1X 10 -3 Depositing a layer of platinum film by adopting electron beam evaporation under the vacuum degree of Pa, wherein the deposition rate is 0.9-1.0 nm/s, and the thickness of the obtained platinum film is 50nm;
(3) And removing the negative photoresist and the platinum film on the negative photoresist by using a Lift-off process to obtain the Cu/Cu-TCNQ/Cu nanowire with platinum electrodes packaged at two ends.
Characterization of Cu/Cu-TCNQ/Cu nanowires
XPS characterization is carried out on the prepared Cu/Cu-TCNQ/Cu nanowire, a characteristic peak representing Cu-TCNQ exists in an analysis energy spectrum, a Cu-TCNQ complex is generated in the middle of the nanowire, the whole nanowire is the Cu/Cu-TCNQ/Cu nanowire with a Schottky junction, the appearance of the nanowire is observed by adopting SEM, and the nanowire with better appearance is selected for a subsequent electrical property measurement experiment.
Example 2: ag/Ag-TCNQ/Ag nano-wire
Preparation of samples for slicing
(1) Pouring a PDMS prepolymer on a silicon substrate to enable the upper surface of the silicon substrate to be completely embedded in the PDMS prepolymer to form a PDMS-silicon composite structure, wherein the thickness of the PDMS prepolymer is about 2mm, mixing the PDMS and a curing agent according to the mass ratio of 10;
(2) Processing a die hole reaching the silicon substrate on the cured PDMS by using an art designing knife, wherein the size of the die hole is 1cm multiplied by 1cm;
(3) Placing the PDMS-silicon composite structure with the processed mould hole in a vacuum coating system, and depositing an Ag film by adopting a magnetron sputtering method under the condition that the vacuum degree is 0.5Pa, wherein the deposition rate is 0.6-0.7 nm/s, and the thickness of the prepared Ag film is 200nm;
(4) Pouring the Epo-fix epoxy resin prepolymer into the holes of the die, so that the holes are just filled with the Epo-fix epoxy resin prepolymer, curing and stripping to obtain an Ag film-resin composite structure, mixing the Epo-fix epoxy resin prepolymer and a curing agent according to a mass ratio of 25 to 3, slowly stirring in a single direction for 2min, heating in a 60 ℃ drying oven for 3min, degassing in a vacuum inlaying machine for 15min, and finally curing in the 60 ℃ drying oven for 3 hours;
(5) Cutting the Ag film-resin composite structure into a proper size, placing the Ag film-resin composite structure in a silica gel embedding mold, pouring Epo-fix epoxy resin prepolymer, and finally placing the product in an oven at 60 ℃ for curing for 3 hours to obtain a cuboid resin-Ag film-resin composite structure with the size of 14 multiplied by 5 multiplied by 3mm (length multiplied by width multiplied by height) as a sample for slicing.
Preparation of Ag nano-wire by nano-slicing method
Putting the obtained sample for slicing into a clamp, adopting an ultrathin slicer to perform block trimming and slicing to obtain the Ag nanowire-containing resin sheet, firstly polishing the end face of the sample by using a block trimming cutter until the end face of the Ag film is exposed, trimming the end face to form a square boss containing the Ag film, wherein each side length is about 0.6mm, using a linear edge diamond slicing cutter with deionized water tank liquid to slice the boss, setting the slicing rate to be 0.5mm/s and the feeding amount to be 180nm, and obtaining the Ag nanowire-containing resin sheet with the thickness of 180 nm.
Transfer and conditioning of Ag nanowires
And fishing the resin sheet containing the Ag nanowires from the deionized water tank liquor by using an annular sheet fishing ring arranged on the ultrathin slicer, transferring the resin sheet to the surface of a hydrophilic silicon oxide substrate, and then carrying out micro-adjustment by using a hair fiber pen under a body type microscope to obtain the Ag nanowire-silicon oxide substrate composite structure.
Partial coating and exposure of Ag nanowires
(1) Placing the Ag nanowire-silicon oxide substrate composite structure on a heating table, and heating for 2min at the temperature of 110 ℃;
(2) After heating, placing the Ag nanowire on a spin coater, dripping a little negative photoresist at two ends of the Ag nanowire, and then carrying out rotary spin coating, wherein the spin coating speed is 1000r/min, and the spin coating time is 30s;
(3) After the glue homogenizing is finished, placing the glue on a heating table again to be heated for 2min, wherein the heating temperature is 110 ℃;
(4) Carrying out exposure by adopting ultraviolet lithography, wherein the exposure time is 5s;
(5) And developing to obtain the Ag nanowire-silicon oxide substrate composite structure with two ends coated with photoresist for protection and the middle part exposed.
Preparation of Ag/Ag-TCNQ/Ag nanowire
And (3) placing the Ag nanowire-silicon oxide substrate composite structure with the two ends coated with the photoresist for protection in a TCNQ acetonitrile solution with the concentration of 99.9%, reacting at room temperature for 20min, taking out, placing in the acetonitrile solution to wash away residual liquid, fully reacting the exposed middle part of the Ag nanowire with the TCNQ acetonitrile solution to generate an Ag-TCNQ complex, and maintaining the parts coated and protected at the two ends as they are to obtain the Ag/Ag-TCNQ/Ag nanowire.
Preparation of extraction electrode
(1) Removing the negative photoresist at two ends of the Ag/Ag-TCNQ/Ag nanowire by adopting a wet method, then coating the negative photoresist on the middle part by adopting ultraviolet lithography again for secondary lithography, wherein the coating range comprises the Ag-TCNQ at the middle part and the Ag at two sides of the Ag-TCNQ/Ag nanowire, and the Ag at two ends of the Ag/Ag-TCNQ/Ag nanowire is exposed;
(2) Then placing the film in a vacuum coating system at 1X 10 -3 Depositing a layer of gold film by adopting electron beam evaporation under the vacuum degree of Pa, wherein the deposition rate is 0.9-1.0 nm/s, and the thickness of the obtained gold film is 50nm;
(3) And removing the negative photoresist and the gold film on the negative photoresist by using a Lift-off process to obtain the Ag/Ag-TCNQ/Ag nanowire with gold electrodes packaged at two ends.
Characterization of Ag/Ag-TCNQ/Ag nanowires
XPS characterization is carried out on the prepared Ag/Ag-TCNQ/Ag nanowire, a characteristic peak representing Ag-TCNQ exists in an analysis energy spectrum, an Ag-TCNQ complex is generated in the middle of the nanowire, the whole nanowire is the Ag/Ag-TCNQ/Ag nanowire with a Schottky junction, the appearance of the nanowire is observed by adopting SEM, and the nanowire with better appearance is selected for a subsequent electrical property measurement experiment.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. A method of preparing nanowires having M/M-TCNQ schottky junctions, characterized in that: the method comprises the following steps:
the method comprises the following steps: pouring PDMS on a silicon substrate to completely embed the upper surface of the silicon substrate to form a PDMS-silicon composite structure;
step two: processing a die hole reaching the silicon substrate on the cured PDMS;
step three: depositing an M film on the PDMS-silicon composite structure, wherein the M film is an Ag film or a Cu film;
step four: pouring resin into the holes of the die, and curing and stripping to obtain an M film-resin composite structure;
step five: embedding the surface of the M film-resin composite structure with resin to obtain a resin-M film-resin composite structure;
step six: performing nano slicing on the resin-M film-resin composite structure serving as a sample for slicing to obtain a resin slice containing M nanowires;
step seven: transferring the resin sheet containing the M nanowire onto a silicon oxide substrate to obtain an M nanowire-silicon oxide substrate composite structure;
step eight: coating photoresist at two ends of the M nanowire on the M nanowire-silicon oxide substrate composite structure by adopting a photoetching process to protect, and exposing the middle part of the M nanowire;
step nine: placing the M nanowire-silicon oxide substrate composite structure with the two ends coated with photoresist for protection in a TCNQ acetonitrile solution for full reaction to obtain an M/M-TCNQ/M nanowire;
step ten: removing the photoresist coated on the two ends to expose the two ends of the M/M-TCNQ/M nanowire, and then coating the photoresist on the middle part of the M/M-TCNQ/M nanowire for protection by adopting a photoetching process;
step eleven: depositing an inert metal film on the M/M-TCNQ/M nanowire with the middle part coated with the photoresist for protection to be used as an extraction electrode, and then removing the photoresist coated on the middle part and the inert metal film on the photoresist by using a Lift-off process to obtain the M/M-TCNQ/M nanowire with the inert electrodes packaged at two ends;
step twelve: and carrying out X-ray photoelectron spectroscopy (XPS) analysis and Scanning Electron Microscope (SEM) imaging on the M/M-TCNQ/M nanowire with the inert electrodes packaged at the two ends, comparing an XPS analysis map with a standard M-TCNQ map, indicating that an M-TCNQ complex is generated in the middle part if a peak value representing an M-TCNQ element exists, and observing the SEM image to obtain the generation condition of the M-TCNQ complex so as to realize the characterization of the nanowire.
2. The method of claim 1, wherein the nanowire is fabricated with an M/M-TCNQ schottky junction, and wherein: the thickness of the M film in the third step is 100-200 nm, and the deposition method is resistance evaporation source evaporation, electron beam evaporation source coating, sputtering coating or ion coating.
3. The method of claim 1, wherein the nanowire is fabricated with an M/M-TCNQ schottky junction, and wherein: the resin in the fourth step and the fifth step is thermosetting resin.
4. A method of fabricating nanowires with M/M-TCNQ schottky junctions as claimed in claim 3, wherein: the thermosetting resin is epoxy resin, ultraviolet curing glue, organic silicon resin or thermosetting acrylic resin.
5. A method of fabricating nanowires with M/M-TCNQ schottky junctions according to claim 1, wherein: and in the sixth step, the nano slicing is carried out by adopting an ultrathin slicer, firstly, a trimming cutter is used for trimming and polishing one end face of the resin-M film-resin composite structure to expose the end face of the M film embedded in the resin-M film-resin composite structure, then the end face is trimmed to form a boss containing the M film, the length of each side is 0.2-0.6 mm, then, a slicing cutter is used for slicing the boss, the groove liquid of the slicing cutter with a water groove is deionized water, the slicing speed is 0.1-15 mm/s, and the feeding amount is 50-200 nm.
6. The method of claim 5, wherein the nanowire having an M/M-TCNQ Schottky junction comprises: the slicing knife is made of glass or diamond.
7. The method of claim 1, wherein the nanowire is fabricated with an M/M-TCNQ schottky junction, and wherein: and seventhly, transferring the resin slice containing the M nanowires to the surface of the silicon oxide substrate from deionized water by adopting an annular slice dragging ring method, a substrate direct slice dragging method or a substrate dipping method, and performing fine adjustment under a body microscope according to needs.
8. A method of fabricating nanowires with M/M-TCNQ schottky junctions according to claim 1, wherein: and the photoetching process in the eighth step and the tenth step is ultraviolet photoetching or electron beam photoetching.
9. The method of claim 8, wherein the nanowire having an M/M-TCNQ schottky junction comprises: the photoresist adopts negative photoresist in ultraviolet lithography, and adopts positive photoresist in electron beam lithography.
10. The method of claim 1, wherein the nanowire is fabricated with an M/M-TCNQ schottky junction, and wherein: and step eleven, the inert metal film is a gold film or a platinum film, the thickness of the film is 50-100 nm, and the deposition method is resistance evaporation source evaporation, electron beam evaporation source coating, sputtering coating or ion coating.
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