CN113410148B - Welding method for chip packaging and chip packaging method - Google Patents
Welding method for chip packaging and chip packaging method Download PDFInfo
- Publication number
- CN113410148B CN113410148B CN202110582374.9A CN202110582374A CN113410148B CN 113410148 B CN113410148 B CN 113410148B CN 202110582374 A CN202110582374 A CN 202110582374A CN 113410148 B CN113410148 B CN 113410148B
- Authority
- CN
- China
- Prior art keywords
- welded
- temperature
- chip
- tube shell
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83024—Applying flux to the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention relates to the technical field of chip packaging, and discloses a chip packaging welding method and a chip packaging method, wherein the welding method comprises the following steps: heating the tube shell substrate to a first temperature, wherein the first temperature is lower than the melting point of a solder sheet arranged on the upper surface of the tube shell substrate, and the solder sheet is arranged in a first frame on the tube shell substrate; placing the to-be-welded part on the welding flux sheet, raising the temperature of the tube shell substrate to a second temperature, and reciprocating the to-be-welded part by a first distance along a first direction at a preset first pressure to enable the to-be-welded part to reach a preset first height; and cooling the tube shell substrate to a third temperature, and welding the to-be-welded part to the tube shell substrate, wherein the third temperature is lower than the melting point of the welding flux sheet. Has the advantages that: the temperature control method in the chip packaging process and the welding method of the parts to be welded and the welding flux sheets are improved, the cavities between the parts to be welded and the substrate in the chip welding process are reduced, and the product reliability is improved.
Description
Technical Field
The invention relates to the technical field of chip packaging, in particular to a welding method of chip packaging and a chip packaging method.
Background
At present, a gallium nitride high electron mobility transistor radio frequency power amplifier chip and a silicon-based high voltage power integrated radio frequency amplifier chip generate a large amount of heat during working, and a packaging process with good heat conductivity is preferred when the chips are packaged. The gold-tin soldering process adopts molten gold-tin solder to weld the chip and the packaging metal matrix together, has high welding strength, excellent conductivity and heat conductivity, and is widely used for packaging gallium nitride high electron mobility transistor radio frequency power amplifier chips and silicon-based high-voltage power integrated radio frequency amplifier chips.
In the prior art, the operation flow of chip packaging by adopting a gold-tin soldering process is as follows: cleaning foreign matters on the materials, welding a chip wire and packaging. However, the operation temperature of solder welding is high, and in addition, many influencing factors exist in the welding operation process, so that the situation that many cavities exist between the bottom of the chip and the substrate easily occurs in the chip bonding process, and the reliability of the product is reduced.
Therefore, it is necessary to improve the chip soldering method in the existing chip packaging process to improve the reliability of the product.
Disclosure of Invention
The purpose of the invention is: the chip packaging welding method and the chip packaging method are provided, so that the cavities between the chip and the substrate in the chip welding process are reduced, and the product reliability is improved.
In order to achieve the above object, the present invention provides a soldering method of a chip package, comprising:
and heating the tube shell substrate to a first temperature, wherein the first temperature is lower than the melting point of the solder sheet arranged on the upper surface of the tube shell substrate, and the solder sheet is arranged in a first frame on the tube shell substrate.
The parts to be soldered are placed on the solder pads and the temperature of the package substrate is raised to a second temperature, which is higher than the melting point of the solder pads.
The method comprises the steps that a to-be-welded part is moved back and forth for a first distance along a first direction under a preset first pressure, and the to-be-welded part reaches a preset first height; the first height is a second distance from the to-be-welded part to the upper surface of the tube shell substrate.
And cooling the tube shell substrate to a third temperature, and welding the to-be-welded part to the tube shell substrate, wherein the third temperature is lower than the melting point of the welding flux sheet.
Further, the to-be-welded part is moved back and forth by a first distance along a first direction with a preset first pressure, specifically:
determining a first moving direction according to the distance from the to-be-welded part to the side wall of the pipe shell, and when the distance from the to-be-welded part to the left side wall and the right side wall of the pipe shell meets a preset distance requirement, moving the to-be-welded part left and right along a first normal of the left side wall or the right side wall of the pipe shell and recording the first normal as an X axis; when the distance from the to-be-welded part to the front and rear side walls of the pipe shell meets the preset distance requirement, the to-be-welded part moves back and forth along a second normal line of the front or rear side wall of the pipe shell, and the second normal line is marked as a Y axis.
When the part to be welded moves along the X axis, the first distance is four to six percent of the length of the part to be welded on the X axis.
When the part to be welded moves along the Y axis, the first distance is four to six percent of the length of the part to be welded on the Y axis.
Further, the temperature of the package substrate is raised to a second temperature, specifically:
the temperature of the cartridge is adjusted to a second temperature at a first ramp rate and maintained at the second temperature for a first time.
Further, the value range of the first pressure is from zero point five newtons to zero point seven newtons.
Further, the second distance is ten percent to thirty percent of the thickness of the solder sheet.
The invention also discloses a chip packaging method, which comprises the following steps:
the welding method is applied to welding the chip and the tube shell substrate.
The matching element is soldered to the package substrate.
The chip is connected with the first pin of the tube shell, the chip is connected with the matching element, and the matching element is connected with the second pin of the tube shell.
And sealing the tube shell cover on the first frame to complete the packaging of the chip.
Further, the parts to be welded comprise matching elements, and the matching elements and the shell substrate are welded by the welding method.
Compared with the prior art, the welding method for chip packaging and the chip packaging method have the advantages that: the temperature control method in the chip packaging process and the welding method of the parts to be welded and the welding flux sheets are improved, the cavities between the parts to be welded and the substrate in the chip welding process are reduced, and the product reliability is improved.
Drawings
Fig. 1 is a schematic flow chart of a soldering method of a chip package in embodiment 1 of the present invention;
fig. 2 is a schematic flow chart of a chip packaging method in embodiment 2 of the present invention.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Example 1:
in the existing chip packaging process, a chip and a package are required to be soldered, and a person skilled in the art should know the basic structure of the package, which includes: the package comprises a package substrate, a first frame and pins which are arranged on the package substrate, and a package cover. Preferably, the package substrate is a substrate made of a metal material, and the first frame may be a ceramic frame.
As shown in fig. 1, the invention according to the preferred embodiment of the present invention provides a method for soldering a chip package, which is applied to soldering a to-be-soldered part and a package substrate in a chip packaging process, and includes:
step S1, the package substrate is heated to a first temperature, the first temperature is lower than the melting point of the solder pieces placed on the upper surface of the package substrate, and the solder pieces are placed in the first frame on the package substrate.
Step S2, the parts to be soldered are placed on the solder pads and the temperature of the package substrate is raised to a second temperature, which is higher than the melting point of the solder pads.
Step S3, the piece to be welded is moved back and forth along a first direction by a first distance under a preset first pressure, and the piece to be welded reaches a preset first height; the first height is a second distance from the to-be-welded part to the upper surface of the tube shell substrate.
And step S4, cooling the tube shell substrate to a third temperature, and welding the to-be-welded part on the tube shell substrate, wherein the third temperature is lower than the melting point of the welding flux.
In step S1, an optional implementation is: the tube shell is placed on the operation table and fixed, the solder pieces are sucked by the suction nozzle and placed in the first frame of the tube shell, the temperature is raised to a set first temperature, the first temperature is lower than the melting temperature of the solder pieces (the melting temperature of the solder pieces is 280 ℃), and the first temperature is 260 ℃. The first temperature can be determined according to the material of the solder sheet, and the first temperature should be close to the melting point of the solder sheet, so that the temperature above the melting point can be reached quickly when the solder sheet is melted later.
In step S2, the heating the package substrate to the second temperature specifically includes:
the temperature of the cartridge is adjusted to a second temperature at a first ramp rate and maintained at the second temperature for a first time.
In step S2, an optional implementation is: sucking the chip by a suction nozzle, placing the chip on a solder sheet in a first frame of the tube shell, and raising the temperature from a first temperature (260 ℃) to a second temperature (350 ℃), wherein in order to ensure the smoothness of temperature rise, the temperature rise rate is preferably about 15 ℃/S; 7S was maintained at the second temperature (350 ℃). When soldering is performed, in order to enable better soldering, the solder pieces can be melted in a shorter time without affecting the subsequent soldering operation, and therefore, it is necessary to control the first temperature at which the solder pieces are preheated and the rate of temperature rise. At the same time, the solder sheet needs to be kept at a temperature higher than the melting point for the subsequent operation, preferably 350 ℃, so that the solder sheet can be melted, and the temperature can be rapidly reduced to a temperature lower than the melting point.
In step S3, the reciprocating movement of the to-be-welded part along the first direction by a first preset pressure is specifically:
determining a first moving direction according to the distance from the to-be-welded part to the side wall of the pipe shell, and when the distance from the to-be-welded part to the left side wall and the right side wall of the pipe shell meets a preset distance requirement, moving the to-be-welded part left and right along a first normal of the left side wall or the right side wall of the pipe shell and recording the first normal as an X axis; when the distance from the to-be-welded part to the front and rear side walls of the pipe shell meets the preset distance requirement, the to-be-welded part moves back and forth along a second normal line of the front or rear side wall of the pipe shell, and the second normal line is marked as a Y axis.
When the part to be welded moves along the X axis, the first distance is four to six percent of the length of the part to be welded on the X axis.
When the part to be welded moves along the Y axis, the first distance is four to six percent of the length of the part to be welded on the Y axis.
In an embodiment of the present invention, the first pressure ranges from zero five newtons to zero seven newtons.
In an embodiment of the invention, the second distance is ten percent to thirty percent of the thickness of the solder sheet. In order to better enable a to-be-welded part to be welded on a tube shell substrate, certain pressure needs to be applied to the to-be-welded part, the solder sheet is in a molten state at the moment, the thickness of the solder sheet can be changed when the solder sheet is pressed downwards, meanwhile, the to-be-welded part needs to be prevented from being in direct contact with the tube shell substrate, and therefore the solder sheet in the molten state between the to-be-welded part and the tube shell substrate needs to be prevented from being completely extruded away. Preferably, the second distance can be preset to be twenty percent of the thickness of the solder sheet.
An alternative embodiment is: and moving the workpiece to be welded twice to three times back and forth along the X-axis direction to enable the workpiece to be welded and the solder sheet to be rubbed twice to three times, wherein the first distance is 5% of the corresponding direction size of the workpiece to be welded (if the size of the workpiece to be welded in the X-axis direction is 0.7mm, the rubbing length in the X-direction is 0.7 multiplied by 5% ═ 0.035mm), and meanwhile, the pressure of zero point six newtons is applied when the workpiece to be welded is rubbed.
An alternative embodiment is: the welding part is moved back and forth twice to three times along the X-axis direction, so that the welding part and the welding flux sheet are rubbed twice to three times, the first distance is 4% of the corresponding direction size of the welding part (if the size of the welding part in the X-axis direction is 0.7mm, the rubbing length in the X-direction is 0.7 multiplied by 4%, namely 0.028mm), and meanwhile, the pressure of a zero point seven newtons is applied when the welding part is rubbed.
An alternative embodiment is: and moving the workpiece to be welded and the solder sheet back and forth twice to three times along the Y-axis direction, so that the workpiece to be welded and the solder sheet are rubbed twice to three times, wherein the first distance is 6% of the corresponding direction size of the workpiece to be welded (if the size of the workpiece to be welded in the Y-axis direction is 0.7mm, the rubbing length in the Y direction is 0.7 multiplied by 6%, which is 0.042mm), and meanwhile, the pressure of five newtons at zero point is applied when the workpiece to be welded is rubbed.
In step S4, an optional implementation is: the temperature of the package substrate is rapidly decreased from the second temperature (350 ℃) to the third temperature (260 ℃). At the moment, the temperature of the welding flux piece is reduced along with the temperature of the tube shell substrate, and when the temperature is lower than the melting point, the welding flux piece is solidified, and the welding piece and the tube shell substrate are welded together.
Example 2:
as shown in fig. 2, the present invention discloses a chip packaging method, which is applied to the chip packaging process, and the packaging method comprises:
the parts to be welded include chips, and the chips and the package substrate are welded by applying the welding method described in embodiment 1.
The matching element is soldered to the package substrate.
The chip is connected with the first pin of the tube shell, the chip is connected with the matching element, and the matching element is connected with the second pin of the tube shell.
And sealing the tube shell cover on the first frame to complete the packaging of the chip.
The packaging method is optimized, and the to-be-welded part comprises a matching element which can be a capacitor. The soldering of the matching element to the package substrate is carried out using the soldering method described in example 1.
In this embodiment, the chip may be a GaN HEMT or GaAs.
In this embodiment, the chip is connected to the first pin of the package, the chip is connected to the matching element, and the matching element is connected to the second pin of the package, specifically: the first pin on one side of the tube shell is welded with the welding pad on one side of the chip through a gold thread, the welding pad on the other side of the chip is welded with the gold thread on one side of the matching element, and the other side of the matching element is connected with the second pin on the other side through a welding wire.
By adopting the technical scheme of the invention to weld the chip or other parts to be welded with the tube shell substrate, the cavity between the chip or other parts to be welded and the tube shell substrate is obviously reduced, the cavity rate is reduced to be lower than 5 percent from the previous 25-50 percent, the performance and the reliability of the chip or other parts to be welded can be obviously improved, and the invention has obvious beneficial effect.
To sum up, the embodiment of the invention provides a chip packaging welding method and a chip packaging method, compared with the prior art, the chip packaging welding method has the following beneficial effects: the temperature control method in the chip packaging process and the welding method of the parts to be welded and the solder pieces are improved, the cavities between the parts to be welded and the substrate in the chip welding process are reduced, and the product reliability is improved.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (6)
1. A method of soldering a chip package, comprising:
heating the tube shell substrate to a first temperature, wherein the first temperature is lower than the melting point of a solder sheet placed on the upper surface of the tube shell substrate, and the solder sheet is placed in a first frame on the tube shell substrate;
placing the parts to be welded on the solder sheets and heating the temperature of the substrate of the tube shell to a second temperature, wherein the second temperature is higher than the melting point of the solder sheets;
the method comprises the steps that a to-be-welded part is moved back and forth for a first distance along a first direction under a preset first pressure, and the to-be-welded part reaches a preset first height; the first height is a second distance from the part to be welded to the upper surface of the tube shell substrate;
cooling the tube shell substrate to a third temperature, and welding the to-be-welded part on the tube shell substrate, wherein the third temperature is lower than the melting point of the welding flux sheet;
the to-be-welded part reciprocates a first distance along a first direction with a preset first pressure, and specifically comprises the following steps:
determining a first moving direction according to the distance from the to-be-welded part to the side wall of the pipe shell, and when the distance from the to-be-welded part to the left side wall and the right side wall of the pipe shell meets a preset distance requirement, moving the to-be-welded part left and right along a first normal of the left side wall or the right side wall of the pipe shell and recording the first normal as an X axis; when the distance from the to-be-welded part to the front and rear side walls of the pipe shell meets the preset distance requirement, the to-be-welded part moves back and forth along a second normal line of the front or rear side wall of the pipe shell, and the second normal line is marked as a Y axis;
when the part to be welded moves along the X axis, the first distance is four to six percent of the length of the part to be welded on the X axis;
when the part to be welded moves along the Y axis, the first distance is four to six percent of the length of the part to be welded on the Y axis.
2. The soldering method for chip package according to claim 1, wherein the temperature of the substrate of the package is raised to a second temperature, specifically:
the temperature of the cartridge is adjusted to a second temperature at a first ramp rate and maintained at the second temperature for a first time.
3. The method for soldering the chip package according to any one of claims 1 to 2, wherein the first pressure ranges from five tenths of a newton to seven tenths of a newton.
4. The method for soldering the chip package according to any one of claims 1 to 2, wherein the second distance is ten percent to thirty percent of the thickness of the solder sheet.
5. A method of chip packaging, comprising:
the welding method of the chip and the tube shell substrate is applied to the welding method of any one of claims 1 to 4, wherein the parts to be welded comprise the chip; welding the matching element with the tube shell substrate;
connecting the chip with a first pin of the tube shell, connecting the chip with the matching element, and connecting the matching element with a second pin of the tube shell;
and sealing the tube shell cover on the first frame to complete the packaging of the chip.
6. The chip packaging method according to claim 5, wherein the part to be welded comprises a matching element, and the matching element is welded to the package substrate by using the welding method according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110582374.9A CN113410148B (en) | 2021-05-26 | 2021-05-26 | Welding method for chip packaging and chip packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110582374.9A CN113410148B (en) | 2021-05-26 | 2021-05-26 | Welding method for chip packaging and chip packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113410148A CN113410148A (en) | 2021-09-17 |
| CN113410148B true CN113410148B (en) | 2022-06-14 |
Family
ID=77675571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110582374.9A Active CN113410148B (en) | 2021-05-26 | 2021-05-26 | Welding method for chip packaging and chip packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113410148B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005209833A (en) * | 2004-01-22 | 2005-08-04 | Sony Corp | Method for manufacturing semiconductor device |
| US6933221B1 (en) * | 2002-06-24 | 2005-08-23 | Micron Technology, Inc. | Method for underfilling semiconductor components using no flow underfill |
| CN102272907A (en) * | 2008-11-07 | 2011-12-07 | 豪锐恩科技私人有限公司 | In-situ melt and reflow process for forming flip-chip interconnections and system thereof |
| CN104201113A (en) * | 2014-09-04 | 2014-12-10 | 中国电子科技集团公司第五十八研究所 | System-in-package type air-tightness sealing structure and manufacturing method thereof |
| CN108428637A (en) * | 2018-03-09 | 2018-08-21 | 中南大学 | A kind of method that micro- copper post interconnection is realized in the sintering of ultrasonic wave added micron silver paste |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495397B2 (en) * | 2001-03-28 | 2002-12-17 | Intel Corporation | Fluxless flip chip interconnection |
-
2021
- 2021-05-26 CN CN202110582374.9A patent/CN113410148B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6933221B1 (en) * | 2002-06-24 | 2005-08-23 | Micron Technology, Inc. | Method for underfilling semiconductor components using no flow underfill |
| JP2005209833A (en) * | 2004-01-22 | 2005-08-04 | Sony Corp | Method for manufacturing semiconductor device |
| CN102272907A (en) * | 2008-11-07 | 2011-12-07 | 豪锐恩科技私人有限公司 | In-situ melt and reflow process for forming flip-chip interconnections and system thereof |
| CN104201113A (en) * | 2014-09-04 | 2014-12-10 | 中国电子科技集团公司第五十八研究所 | System-in-package type air-tightness sealing structure and manufacturing method thereof |
| CN108428637A (en) * | 2018-03-09 | 2018-08-21 | 中南大学 | A kind of method that micro- copper post interconnection is realized in the sintering of ultrasonic wave added micron silver paste |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113410148A (en) | 2021-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8435867B2 (en) | Method of manufacturing semiconductor device and method of manufacturing electronic device | |
| JP5026492B2 (en) | Direct die bonding using a heated bond head | |
| US8356742B2 (en) | Method for manufacturing a semiconductor device using an Al-Zn connecting material | |
| KR100700317B1 (en) | Apparatus and method for die attachment | |
| JP2008270270A (en) | Process for manufacturing semiconductor device | |
| CN113410148B (en) | Welding method for chip packaging and chip packaging method | |
| JPH0964258A (en) | Large power semiconductor device | |
| JP2016129205A (en) | Semiconductor device manufacturing method | |
| KR20070120984A (en) | Semiconductor device and semiconductor device manufacturing method | |
| CN107527827B (en) | Semiconductor device manufactured by fluxless soldering | |
| JP3025093B2 (en) | Semiconductor device and its mounting structure | |
| CN108581168B (en) | Solid welding process of heat dissipation chip | |
| CN109449125B (en) | Double-row structure internal insulation type plastic package semiconductor device and manufacturing method thereof | |
| JP2000349099A (en) | Method of bonding with solder and manufacture of semiconductor device | |
| CN110416101A (en) | Use sintering silver paste as the power module copper sheet welding procedure of bonding agent | |
| KR101962060B1 (en) | Cap for sealing electronic parts | |
| US11557563B2 (en) | Sinter sheet, semiconductor device and manufacturing method thereof | |
| JP2006114649A (en) | Method and apparatus for manufacturing semiconductor device | |
| CN117038617A (en) | Power semiconductor packaging structure and manufacturing method thereof | |
| CN105405833A (en) | Multi-chip multi-overlap flat-paved sandwich encapsulation structure and technological process thereof | |
| CN116169111A (en) | Eutectic welding structure and method for reducing eutectic cavity rate | |
| CN114038817A (en) | Heat sink and manufacturing method thereof, semiconductor circuit and manufacturing method thereof | |
| JP5816659B2 (en) | Manufacturing method of semiconductor device | |
| CN115706014A (en) | Packaging method and packaging structure for improving pin glue overflow | |
| CN115055772A (en) | Method for controlling size of brazing seam in vacuum eutectic process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |