CN113410139A - 半导体结构及其形成方法 - Google Patents
半导体结构及其形成方法 Download PDFInfo
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- CN113410139A CN113410139A CN202010625450.5A CN202010625450A CN113410139A CN 113410139 A CN113410139 A CN 113410139A CN 202010625450 A CN202010625450 A CN 202010625450A CN 113410139 A CN113410139 A CN 113410139A
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
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CN202010625450.5A CN113410139A (zh) | 2020-07-02 | 2020-07-02 | 半导体结构及其形成方法 |
US16/933,706 US11362198B2 (en) | 2020-07-02 | 2020-07-20 | Semiconductor structure and method of forming the same |
TW109138501A TWI794672B (zh) | 2020-07-02 | 2020-11-04 | 半導體結構及其形成方法 |
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CN202010625450.5A CN113410139A (zh) | 2020-07-02 | 2020-07-02 | 半导体结构及其形成方法 |
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US (1) | US11362198B2 (zh) |
CN (1) | CN113410139A (zh) |
TW (1) | TWI794672B (zh) |
Family Cites Families (21)
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US5349225A (en) * | 1993-04-12 | 1994-09-20 | Texas Instruments Incorporated | Field effect transistor with a lightly doped drain |
US5675166A (en) * | 1995-07-07 | 1997-10-07 | Motorola, Inc. | FET with stable threshold voltage and method of manufacturing the same |
US6171913B1 (en) * | 1998-09-08 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | Process for manufacturing a single asymmetric pocket implant |
US6198131B1 (en) * | 1998-12-07 | 2001-03-06 | United Microelectronics Corp. | High-voltage metal-oxide semiconductor |
US6372587B1 (en) * | 2000-05-10 | 2002-04-16 | Advanced Micro Devices, Inc. | Angled halo implant tailoring using implant mask |
US6773997B2 (en) * | 2001-07-31 | 2004-08-10 | Semiconductor Components Industries, L.L.C. | Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability |
US7224025B2 (en) | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Isolated LDMOS IC technology |
US7608513B2 (en) * | 2007-01-25 | 2009-10-27 | Freescale Semiconductor, Inc. | Dual gate LDMOS device fabrication methods |
CN101916728B (zh) | 2010-07-20 | 2012-05-30 | 中国科学院上海微***与信息技术研究所 | 可完全消除衬底辅助耗尽效应的soi超结ldmos结构的制作工艺 |
US8575692B2 (en) * | 2011-02-11 | 2013-11-05 | Freescale Semiconductor, Inc. | Near zero channel length field drift LDMOS |
US8680613B2 (en) | 2012-07-30 | 2014-03-25 | Alpha And Omega Semiconductor Incorporated | Termination design for high voltage device |
CN102306659B (zh) | 2011-09-08 | 2013-06-19 | 浙江大学 | 一种基于体电场调制的ldmos器件 |
US8624322B1 (en) * | 2012-07-17 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage device with a parallel resistor |
CN103855208A (zh) | 2012-11-28 | 2014-06-11 | 北大方正集团有限公司 | 一种高压ldmos集成器件 |
US9450048B2 (en) * | 2013-01-09 | 2016-09-20 | Macronix International Co., Ltd. | Semiconductor device and manufacturing method and operating method for the same |
US9269808B2 (en) * | 2014-02-21 | 2016-02-23 | Vanguard International Semiconductor Corporation | Method and apparatus for power device with depletion structure |
US9583612B1 (en) * | 2016-01-21 | 2017-02-28 | Texas Instruments Incorporated | Drift region implant self-aligned to field relief oxide with sidewall dielectric |
US10153366B2 (en) | 2016-03-09 | 2018-12-11 | Polar Semiconductor, Llc | LDMOS transistor with lightly-doped annular RESURF periphery |
KR102424771B1 (ko) * | 2018-01-24 | 2022-07-25 | 주식회사 디비하이텍 | 반도체 소자 및 그 제조 방법 |
TWI656642B (zh) * | 2018-05-08 | 2019-04-11 | 立錡科技股份有限公司 | 橫向雙擴散金屬氧化物半導體元件及其製造方法 |
TWI673879B (zh) * | 2018-09-27 | 2019-10-01 | 立錡科技股份有限公司 | 高壓元件及其製造方法 |
-
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- 2020-07-02 CN CN202010625450.5A patent/CN113410139A/zh active Pending
- 2020-07-20 US US16/933,706 patent/US11362198B2/en active Active
- 2020-11-04 TW TW109138501A patent/TWI794672B/zh active
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TW202203456A (zh) | 2022-01-16 |
US11362198B2 (en) | 2022-06-14 |
TWI794672B (zh) | 2023-03-01 |
US20220005949A1 (en) | 2022-01-06 |
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