CN113381142A - Three-passband power division filter with high frequency selectivity - Google Patents
Three-passband power division filter with high frequency selectivity Download PDFInfo
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Abstract
The invention discloses a three-passband power division filter with high frequency selectivity, which comprises a dielectric substrate, wherein a metal ground plate is arranged on the lower surface of the dielectric substrate, an input port feeder, a first output feeder and a second output feeder are arranged on the upper surface of the dielectric substrate, the input port feeder, the first output feeder and the second output feeder are all positioned on the same side of the central axis of the dielectric substrate, and one end of the first output feeder is connected with one end of the second output feeder; a first resonance unit, a second resonance unit, a third resonance unit and a fourth resonance unit are sequentially coupled and connected between the input port feeder line and the connection positions of the first output feeder line and the second output feeder line, and the four resonance units have the same structure and respectively comprise a band-pass resonator and two band-stop resonators with different sizes; and a port isolation resistor is arranged between the first output feeder and the second output feeder. The three-passband power division filter has good frequency selectivity, out-of-band harmonic suppression, power distribution characteristics and filtering characteristics.
Description
Technical Field
The invention relates to the technical field of microwave passive devices, in particular to a three-passband power division filter with high frequency selectivity.
Background
In modern wireless communication systems, a power divider and a filter are important rf front-end passive devices, and are often designed in a cascaded manner in order to implement power division and filtering functions at the same time, in this way, not only the volume of the circuit is increased, but also the performance of the circuit is reduced. Therefore, in order to reduce the circuit size and improve the circuit performance, research into a Power divider having a filter response function, that is, a Power division Filter (FPD), which realizes both a predetermined Power division/combination and frequency selectivity has been recently conducted. In addition, and with the continuous development of wireless communication systems, multi-standard communication becomes more and more important, and therefore, the research of the multi-band power division filter circuit becomes more and more important.
Document 1[ k.j.song, m.y.fan, and f.zhang, "Compact Triple-Band Power Divider Integrated Band-pass-Filtering Using Short-circuit SIRs," IEEE trans.complex.package.manufact.technique, vol.7, No.7, july.2017] achieves a good three-pass Band Filtering effect by Using a coupled Short-Circuited ladder impedance resonator and a half-wavelength resonator, but it is difficult to achieve a good application because the circuit structure is complicated and the port isolation and out-of-Band rejection are not ideal.
In the document 2[ c. -f.chen, t. -. y.huang, and r. -. b.wu, "Novel reactive network-type resonators and the pair applications to microstrip baseband filters," IEEE trans.micro.theory technology, vol.54, No.2, pp.755-762, feb.2006], a multi-passband microstrip filter is simply and efficiently implemented by using a mesh three-mode resonator on the basis of not significantly increasing the circuit size, but due to the limitation of the freedom of design parameters, it is difficult to simultaneously implement the design requirements for all passbands, and the implementation difficulty of the design is increased.
Document 3[ R.G, qi mez-Garcia, r.loeches-Sanchez, d.psycho, and d.peroulis, "Single/multi-band Wilkinson-type power divider with embedded transforming sections and application to channel filters," IEEE trans.circuits system.i, reg.pages, vol.62, No.6, pp.1518-1527, jun.2015 ] proposes a new Single/multi-pass Wilkinson power divider with inherent filtering capability, which has a certain broad sense but a large circuit volume and a poor port isolation.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to solve the technical problem of providing a three-passband power division filter with high frequency selectivity aiming at the defects of the prior art.
In order to solve the technical problem, the invention discloses a three-passband power division filter with high frequency selectivity, which comprises a dielectric substrate, wherein a metal grounding plate is arranged on the lower surface of the dielectric substrate, an input port feeder, a first output feeder and a second output feeder are arranged on the upper surface of the dielectric substrate, the input port feeder, the first output feeder and the second output feeder are all positioned on the same side of the central axis of the dielectric substrate, and one end of the first output feeder is connected with one end of the second output feeder; a first resonance unit, a second resonance unit, a third resonance unit and a fourth resonance unit are sequentially coupled and connected between the input port feeder line and the connection positions of the first output feeder line and the second output feeder line, and the first resonance unit, the second resonance unit, the third resonance unit and the fourth resonance unit have the same structure and respectively comprise a band-pass resonator and two band-stop resonators with different sizes; and a port isolation resistor is arranged between the first output feeder and the second output feeder.
The input port feeder line, the first output feeder line and the second output feeder line are all located on the same side of the central axis of the dielectric substrate, so that four resonance units are sequentially coupled and connected, and the overall size can be miniaturized through the design layout; the four resonance units have the same structure, and the design of one band-pass resonator and two band-stop resonators with different sizes can realize the three-band filtering effect.
In one implementation, the input port feed line includes a first 50 ohm microstripThe dielectric substrate comprises a line conduction band and a first quarter-wavelength microstrip transmission line, wherein one end of the first 50-ohm microstrip conduction band is close to the first side edge of the dielectric substrate, and the other end of the first 50-ohm microstrip conduction band is connected with one end of the first quarter-wavelength microstrip transmission line; the connection position of the conduction band of the first 50-ohm microstrip line and the first side edge of the dielectric substrate is an input end, and the other end of the first quarter-wavelength microstrip transmission line is coupled with the first resonance unit; the length of the first quarter-wavelength microstrip transmission line is L1Width of W1。
In one implementation, the first output feeder includes a second 50 ohm microstrip conduction band and a second quarter-wavelength microstrip transmission line, one end of the second 50 ohm microstrip conduction band is close to the first side of the dielectric substrate, and the other end is connected with one end of the second quarter-wavelength microstrip transmission line; the connection position of the conduction band of the second 50-ohm microstrip line and the first side edge of the dielectric substrate 9 is a first output end; the length of the second quarter-wavelength microstrip transmission line is L5Width of W5。
In one implementation, the second output feeder includes a third 50 ohm microstrip conduction band and a third quarter-wavelength microstrip transmission line, one end of the third 50 ohm microstrip conduction band is close to the first side of the dielectric substrate, and the other end is connected to one end of the third quarter-wavelength microstrip transmission line; the connection part of the third 50 ohm microstrip line conduction band and the first side edge of the dielectric substrate is a second output end, a port isolation resistor is arranged between one end of the second quarter-wavelength microstrip transmission line and one end of the third quarter-wavelength microstrip transmission line, the other end of the second quarter-wavelength microstrip transmission line is connected with the other end of the third quarter-wavelength microstrip transmission line, and the connection part is coupled with the fourth resonance unit; the third quarter-wavelength microstrip transmission line has a length L5Width of W5(ii) a The resistance value of the port isolation resistor is R.
In one implementation, the first resonance unit includes a first band-stop resonator, a second band-stop resonator, a first band-pass resonator, a fourth quarter-wavelength microstrip transmission line, and a fifth quarter-wavelength microstrip transmission line, and the first band-pass resonator and the first band-stop resonator are connected to each otherA fifth quarter-wavelength microstrip transmission line is connected between the first band-pass resonator and the second band-stop resonator; the end part of the first band-stop resonator, the end part of the second band-stop resonator and the end part of the first band-pass resonator are connected with grounding columns, so that a quarter-wavelength short-circuit resonator is realized; the first band-pass resonator has a length L11Width of W11(ii) a The first band-impedance resonator has a length L12Width of W12(ii) a The second band-stop resonator has a length L13Width of W13(ii) a The fourth quarter-wave microstrip transmission line has a length of Lq1Width of Wq1(ii) a The length of the fifth quarter wavelength microstrip transmission line is Lq2Width of Wq2。
The first band-stop resonator and the second band-stop resonator are different in size design, and the purpose is to enable the first band-stop resonator and the second band-stop resonator to achieve a three-passband filtering effect after being cascaded. .
In one implementation manner, the second resonance unit includes a third band-stop resonator, a fourth band-stop resonator, a second band-pass resonator, a sixth quarter-wavelength microstrip transmission line, and a seventh quarter-wavelength microstrip transmission line, where the sixth quarter-wavelength microstrip transmission line is connected between the second band-pass resonator and the third band-stop resonator, and the seventh quarter-wavelength microstrip transmission line is connected between the second band-pass resonator and the fourth band-stop resonator; the end part of the third band-stop resonator, the end part of the fourth band-stop resonator and the end part of the second band-pass resonator are connected with grounding columns, so that a quarter-wavelength short-circuit resonator is realized; the second band-pass resonator has a length L11Width of W11(ii) a The fourth band-stop resonator has a length L12Width of W12(ii) a The third band-stop resonator has a length L13Width of W13(ii) a The length of the seventh quarter-wave microstrip transmission line is Lq1Width of Wq1(ii) a The sixth quarter-wave microstrip transmission line has a length of Lq2Width of Wq2。
At one endIn an implementation manner, the third resonance unit includes a fifth band-stop resonator, a sixth band-stop resonator, a third band-pass resonator, an eighth quarter-wavelength microstrip transmission line, and a ninth quarter-wavelength microstrip transmission line, where the eighth quarter-wavelength microstrip transmission line is connected between the third band-pass resonator and the fifth band-stop resonator, and the ninth quarter-wavelength microstrip transmission line is connected between the third band-pass resonator and the sixth band-stop resonator; the end part of the fifth band-stop resonator, the end part of the sixth band-stop resonator and the end part of the third band-pass resonator are connected with grounding columns, so that a quarter-wavelength short-circuit resonator is realized; the third band-pass resonator has a length L11Width of W11(ii) a The sixth band-stop resonator has a length L12Width of W12(ii) a The fifth band-stop resonator has a length L13Width of W13(ii) a The ninth quarter-wave microstrip transmission line has a length of Lq1Width of Wq1(ii) a The length of the eighth quarter-wavelength microstrip transmission line is Lq2Width of Wq2。
In one implementation manner, the fourth resonant unit includes a seventh band-stop resonator, an eighth band-stop resonator, a fourth band-pass resonator, a fourteenth quarter-wavelength microstrip transmission line, and an eleventh quarter-wavelength microstrip transmission line, where the fourth band-pass resonator and the fourth resonant unit include that the fourteenth quarter-wavelength microstrip transmission line is connected between the seventh band-stop resonator and the eighth band-stop resonator, and the eleventh quarter-wavelength microstrip transmission line is connected between the fourth band-pass resonator and the eighth band-stop resonator; the end part of the seventh band-stop resonator, the end part of the eighth band-stop resonator and the end part of the fourth band-pass resonator are connected with grounding columns, so that a quarter-wavelength short-circuit resonator is realized; the fourth band-pass resonator has a length L11Width of W11(ii) a The eighth band-stop resonator has a length L12Width of W12(ii) a The length of the seventh band-stop resonator is L13Width of W13(ii) a The length of the eleventh quarter-wavelength microstrip transmission line is Lq1Width of Wq1(ii) a Of a fourteenth wavelength microstrip transmission lineLength of Lq2Width of Wq2。
The topological structure of the Cascade quadriplex (CQ, four-cavity cross coupling) is integrally formed by utilizing the electric field distribution characteristics of four groups of resonance units with the same structure and a quarter-wavelength microstrip transmission line, so that the out-of-band frequency selectivity can be further improved while the multi-passband characteristic effect is obtained.
In one implementation, the first band-pass resonator is connected with a first quarter-wavelength microstrip transmission line, and the first band-pass resonator is connected with the second band-pass resonator through a twelfth quarter-wavelength microstrip transmission line; the second band-pass resonator is connected with the third band-pass resonator through a thirteenth quarter-wavelength microstrip transmission line; the third band-pass resonator is connected with the fourth band-pass resonator through a fourteenth quarter-wavelength microstrip transmission line; the first band-pass resonator is connected with the fourth band-pass resonator through edge negative coupling, namely the edge of the first band-pass resonator is close to the edge of the fourth band-pass resonator, but the direction of the end part of the first band-pass resonator is opposite to that of the end part of the fourth band-pass resonator, so that the edge negative coupling between the first band-pass resonator and the fourth band-pass resonator is realized, and the connecting part of the second quarter-wavelength microstrip transmission line and the third quarter-wavelength microstrip transmission line is connected with the fourth band-pass resonator. The Cascade Quadriplex (CQ) topological structure is integrally formed, a plurality of zeros are successfully introduced, and good out-of-band inhibition characteristics are obtained; the length of the twelfth quarter-wave microstrip transmission line is L2Width of W2(ii) a The length of the thirteenth quarter-wave microstrip transmission line is L3Width of W3(ii) a The length of the fourteenth quarter-wave microstrip transmission line is L4Width of W4。
In one implementation, an end of the ground post distal from the resonator end is connected to the metallic ground plate through the dielectric substrate.
Has the advantages that:
1. the input port feeder, first output feeder, second output feeder and four resonance unit's of this application embodiment setting, compact structure processes the metal covering of corroding the Circuit substrate front and back through Printed Circuit Board manufacturing process in making to form required metallic pattern, simple structure can realize on monolithic PCB (Printed Circuit Board) Board, and the processing of being convenient for is integrated, low in production cost.
2. The embodiment of the application utilizes the electric field distribution characteristics of four groups of resonance units with the same structure and the quarter-wavelength microstrip transmission line, thereby further improving the out-of-band frequency selectivity while obtaining the multi-passband characteristic effect.
3. According to the embodiment of the application, the CQ topological structure is formed by utilizing the edge negative coupling between the first band-pass resonator and the fourth band-pass resonator, a plurality of zero points are successfully introduced, the out-of-band rejection characteristic is good, and the good power distribution characteristic and the good filtering characteristic can be obtained.
4. The embodiment of the application utilizes the isolation resistor between the output ports to obtain good port isolation.
Drawings
The foregoing and/or other advantages of the invention will become further apparent from the following detailed description of the invention when taken in conjunction with the accompanying drawings.
Fig. 1 is a schematic perspective view of a high-frequency selective three-pass band-pass power division filter according to the present invention.
FIG. 2 is a plan view of embodiment 1.
Fig. 3 is a schematic structural dimension diagram of example 1.
Fig. 4 is an S-parameter simulation diagram of example 1.
Fig. 5 is a simulation diagram of the isolation characteristic S parameter of the two output ports of embodiment 1.
Fig. 6 is a simulation diagram of matching characteristics S-parameters of two output ports of embodiment 1.
FIG. 7 is a diagram showing a processed product in example 1.
Fig. 8 is a schematic topology diagram of embodiment 1.
Detailed Description
Embodiments of the present invention will be described below with reference to the accompanying drawings.
The embodiment of the invention discloses a three-passband power division filter with high frequency selectivity, which is suitable for a filtering part in a radio frequency front-end system of a modern wireless communication system, and is applied to systems such as satellite navigation, lift-off detection and the like.
Example 1
As shown in fig. 1, fig. 2 and fig. 7, the three-passband power division filter with high frequency selectivity provided in this embodiment includes a dielectric substrate 9, a metal ground plate 8 is disposed on a lower surface of the dielectric substrate 9, an input port feeder 1, a first output feeder 2 and a second output feeder 3 are disposed on an upper surface of the dielectric substrate 9, the input port feeder 1, the first output feeder 2 and the second output feeder 3 are all located on a same side of a central axis of the dielectric substrate 9, and one end of the first output feeder 2 is connected to one end of the second output feeder 3; a first resonance unit, a second resonance unit, a third resonance unit and a fourth resonance unit are sequentially coupled and connected between the input port feeder 1 and the connection positions of the first output feeder 2 and the second output feeder 3, the first resonance unit, the second resonance unit, the third resonance unit and the fourth resonance unit have the same structure, and each of the first resonance unit, the second resonance unit, the third resonance unit and the fourth resonance unit comprises a band-pass resonator and two band-stop resonators with different sizes; a port isolation resistor 101 is arranged between the first output feeder 2 and the second output feeder 3.
In this embodiment, the input port feeder 1 includes a first 50 ohm microstrip conduction band 11 and a first quarter-wavelength microstrip transmission line 71, one end of the first 50 ohm microstrip conduction band 11 is close to the first side 9a of the dielectric substrate 9, and the other end is connected to one end of the first quarter-wavelength microstrip transmission line 71; the connection part of the first 50 ohm microstrip line conduction band 11 and the first side 9a of the dielectric substrate 9 is an input end, and the other end of the first quarter-wavelength microstrip transmission line 71 is coupled with the first resonance unit; the first quarter-wave microstrip transmission line 71 has a length L1Width of W1。
In this embodiment, the first output feeder 2 includes a second 50 ohm microstrip conduction band 21 and a second quarter-wavelength microstrip transmission line 75, one end of the second 50 ohm microstrip conduction band 21 is close to the first side 9a of the dielectric substrate 9, and the other end is connected to the second quarter-wavelength microstrip transmission lineOne end of a strip transmission line 75; the connection part of the second 50 ohm microstrip line conduction band 21 and the first side 9a of the dielectric substrate 9 is a first output end; the second quarter-wave microstrip transmission line 75 has a length L5Width of W5。
In this embodiment, the second output feeder 3 includes a third 50 ohm microstrip conduction band 31 and a third quarter-wavelength microstrip transmission line 76, one end of the third 50 ohm microstrip conduction band 31 is close to the first side 9a of the dielectric substrate 9, and the other end is connected to one end of the third quarter-wavelength microstrip transmission line 76; the junction of the third 50 ohm microstrip conduction band 31 and the first side 9a of the dielectric substrate 9 is a second output end, a port isolation resistor 101 is arranged between one end of the second quarter-wavelength microstrip transmission line 75 and one end of the third quarter-wavelength microstrip transmission line 76, the other end of the second quarter-wavelength microstrip transmission line 75 is connected with the other end of the third quarter-wavelength microstrip transmission line 76, and the junction is coupled with a fourth resonance unit; the third quarter-wave microstrip transmission line 76 has a length L5Width of W5(ii) a The resistance of the port isolation resistor 101 is R.
In this embodiment, the first resonance unit includes a first band-pass resonator 41, a second band-pass resonator 42, a first band-pass resonator 51, a fourth quarter-wavelength microstrip transmission line 61, and a fifth quarter-wavelength microstrip transmission line 62, the fourth quarter-wavelength microstrip transmission line 61 is connected between the first band-pass resonator 51 and the first band-pass resonator 41, and the fifth quarter-wavelength microstrip transmission line 62 is connected between the first band-pass resonator 51 and the second band-pass resonator 42; the end part of the first band-stop resonator 41, the end part of the second band-stop resonator 42 and the end part of the first band-pass resonator 51 are connected with grounding posts 81, and one end of each grounding post 81, far away from the end part of the resonator, penetrates through the dielectric substrate 9 and is connected to the metal grounding plate 8; the first band-pass resonator 51 has a length L11Width of W11(ii) a The first band-stop resonator 41 has a length L12Width of W12(ii) a The second band-stop resonator 42 has a length L13Width of W13(ii) a The fourth quarter-wave microstrip transmission line 61 has a length Lq1Width of Wq1(ii) a The length of the fifth quarter-wavelength microstrip transmission line 62 is Lq2Width of Wq2。
In this embodiment, the second resonance unit includes a third band-stop resonator 43, a fourth band-stop resonator 44, a second band-pass resonator 52, a sixth quarter-wavelength microstrip transmission line 63, and a seventh quarter-wavelength microstrip transmission line 64, the sixth quarter-wavelength microstrip transmission line 63 is connected between the second band-pass resonator 52 and the third band-stop resonator 43, and the seventh quarter-wavelength microstrip transmission line 64 is connected between the second band-pass resonator 52 and the fourth band-stop resonator 44; the end part of the third band-stop resonator 43, the end part of the fourth band-stop resonator 44 and the end part of the second band-pass resonator 52 are connected with a grounding post 81, and one end of the grounding post 81 far away from the resonator end part is connected to the metal grounding plate 8 through the dielectric substrate 9; the first band-pass resonator 51 has a length L11Width of W11(ii) a The first band-stop resonator 41 has a length L12Width of W12(ii) a The second band-stop resonator 42 has a length L13Width of W13(ii) a The fourth quarter-wave microstrip transmission line 61 has a length Lq1Width of Wq1(ii) a The length of the fifth quarter-wavelength microstrip transmission line 62 is Lq2Width of Wq2。
In this embodiment, the third resonant unit includes a fifth band-stop resonator 45, a sixth band-stop resonator 46, a third band-pass resonator 53, an eighth quarter-wavelength microstrip transmission line 65, and a ninth quarter-wavelength microstrip transmission line 66, where the eighth quarter-wavelength microstrip transmission line 65 is connected between the third band-pass resonator 53 and the fifth band-stop resonator 45, and the ninth quarter-wavelength microstrip transmission line 66 is connected between the third band-pass resonator 53 and the sixth band-stop resonator 46; the end part of the fifth band-stop resonator 45, the end part of the sixth band-stop resonator 46 and the end part of the third band-pass resonator 53 are connected with grounding posts 81, and one end of each grounding post 81, far away from the end part of the resonator, penetrates through the dielectric substrate 9 and is connected to the metal grounding plate 8; the third band-pass resonator 53 has a length L11Width of W11(ii) a Sixth band stop resonanceThe length of the device 46 is L12Width of W12(ii) a The fifth band-stop resonator 45 has a length L13Width of W13(ii) a The ninth quarter-wave microstrip transmission line 66 has a length Lq1Width of Wq1(ii) a The eighth quarter-wavelength microstrip transmission line 65 has a length Lq2Width of Wq2。
In this embodiment, the fourth resonant unit includes a seventh band-stop resonator 47, an eighth band-stop resonator 48, a fourth band-pass resonator 54, a fourteenth quarter-wavelength microstrip transmission line 67 and an eleventh quarter-wavelength microstrip transmission line 68, the fourth band-pass resonator 54 and the fourth resonant unit include that the fourteenth quarter-wavelength microstrip transmission line 67 is connected between the seventh band-stop resonator 47, and the eleventh quarter-wavelength microstrip transmission line 68 is connected between the fourth band-pass resonator 54 and the eighth band-stop resonator 48; the end part of the seventh band-stop resonator 47, the end part of the eighth band-stop resonator 48 and the end part of the fourth band-pass resonator 54 are connected with grounding posts 81, and one end of each grounding post 81 far away from the end part of each resonator is connected to the metal grounding plate 8 through the dielectric substrate 9; the fourth band-pass resonator 54 has a length L11Width of W11(ii) a The eighth bandstop resonator 48 has a length L12Width of W12(ii) a The seventh band-stop resonator 47 has a length L13Width of W13(ii) a The eleventh quarter-wave microstrip transmission line 68 has a length Lq1Width of Wq1(ii) a The fourteenth one-fourth wavelength microstrip transmission line 67 has a length Lq2Width of Wq2。
In this embodiment, the first band-pass resonator 51 is connected to a first quarter-wavelength microstrip transmission line 71, and the first band-pass resonator 51 is connected to the second band-pass resonator 52 through a twelfth quarter-wavelength microstrip transmission line 72; the second band-pass resonator 52 is connected with the third band-pass resonator 53 through a thirteenth quarter-wave microstrip transmission line 73; the third band-pass resonator 53 is connected to the fourth band-pass resonator 54 through a fourteenth quarter-wavelength microstrip transmission line 74; the first band-pass resonator 51 is connected to the fourth band-pass resonator 54 by means of an edge negative coupling, i.e. theThe edge of the first band-pass resonator 51 is close to the edge of the fourth band-pass resonator 54, but the end of the first band-pass resonator 51 connected with the grounding column 81 is opposite to the end of the fourth band-pass resonator 54 connected with the grounding column 81, and the joint of the second quarter-wavelength microstrip transmission line 75 and the third quarter-wavelength microstrip transmission line 76 is connected with the fourth band-pass resonator 54; the twelfth quarter-wave microstrip transmission line 72 has a length L2Width of W2(ii) a The thirteenth quarter-wave microstrip transmission line 73 has a length L3Width of W3(ii) a The fourteenth quarter wave microstrip transmission line 74 has a length L4Width of W4。
The dimensions of the present embodiment are shown in FIG. 3. The dielectric substrate 9 used had a relative dielectric constant of 3.55, a thickness of 0.508mm and a loss tangent of 0.0027. With reference to fig. 3, the dimensional parameters of the three-pass power division filter are as follows: mm: l is1＝20.8,L2＝23,L3＝24,L4＝24,L5＝24.5,Lq1＝23.5,Lq2＝23.5L11＝20.7,L12＝21.5,L13＝19.5,W1＝0.71,W2＝0.18,W3＝0.11,W4＝0.18,W5＝0.35W11＝7.8,W12＝13,W13＝12.8,Wq1＝0.28,Wq2＝0.28,R＝105Ω.。
The three-passband power division filter of the embodiment is modeled and simulated in electromagnetic simulation software HFSS.13.0. Fig. 4 is a simulation diagram of the S parameter of the three-passband power division filter in this example, and it can be seen from the diagram that the center frequencies of the three passbands of the three-passband power division filter are 1.83GHz, 2.0GHz, and 2.2GHz, the corresponding 3dB relative bandwidths are 3.8%, 4%, and 3.7%, the return loss in the passband is lower than 16dB, and the minimum insertion loss is 1.5 dB. The total number of eight transmission zeros outside the pass band enables the three-pass band power division filter of the embodiment to have good frequency selectivity.
Fig. 5 and fig. 6 are S-parameter simulation graphs of the isolation characteristic and the matching characteristic of the two power output ports of the three-passband power division filter in this example, respectively, and it can be seen from the graphs that the return loss of the output ports in the passband of the three-passband power division filter in this example is lower than 15dB, and the in-band isolation is better than 20 dB.
FIG. 8 is a schematic topology diagram of a three-pass band power division filter of the present embodiment, which includes an input port GAFour multi-frequency resonance units B1(ω)～B4(omega) seven admittance inverters J01～J45Two output ports GBAnd an isolation resistor R, wherein the resonance unit B1(ω)～B4(omega) each consisting of a band-pass resonator and two band-stop resonators, J01Realized by a first quarter-wave microstrip transmission line 71, J12、J23、J34Implemented by a twelfth quarter-wave microstrip transmission line 72, a thirteenth quarter-wave microstrip transmission line 73 and a fourteenth quarter-wave microstrip transmission line 74, two J-s, respectively45Realized by a second quarter-wave microstrip transmission line 75 and a third quarter-wave microstrip transmission line 76, J, respectively14By edge negative coupling of the first band-pass resonator 51 and the fourth band-pass resonator 54. By such a topology a three-pass power division filter with high frequency selectivity is achieved as shown in fig. 1.
The invention processes and corrodes the metal surfaces of the front surface and the back surface of the circuit substrate in the manufacturing process of the printed circuit board, thereby forming the required metal pattern, having simple structure, being realized on a single PCB board, being convenient for processing and integrating and having low production cost. Meanwhile, by utilizing the edge negative coupling and the network topology between the first bandpass resonator 51 and the fourth bandpass resonator 54, the filter has good out-of-band rejection characteristics and obtains good power distribution characteristics and filter characteristics, good port isolation characteristics are obtained by skillfully isolating resistors between one end of the second quarter-wavelength microstrip transmission line 75 and one end of the third quarter-wavelength microstrip transmission line 76, and a three-passband power division filter with high selectivity, compact structure, good port isolation, good out-of-band rejection characteristics, high selectivity, small insertion loss and good out-of-band rejection performance is realized, so that the filter is suitable for modern wireless communication systems.
The present invention provides a concept and a method for a three-pass band pass power splitting filter with high frequency selectivity, and a method and a way for implementing the technical scheme are many, and the above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention. All the components not specified in the present embodiment can be realized by the prior art.
Claims (10)
1. A three-passband power division filter with high frequency selectivity is characterized by comprising a dielectric substrate (9), wherein a metal grounding plate (8) is arranged on the lower surface of the dielectric substrate (9), an input port feeder (1), a first output feeder (2) and a second output feeder (3) are arranged on the upper surface of the dielectric substrate (9), the input port feeder (1), the first output feeder (2) and the second output feeder (3) are all located on the same side of the central axis of the dielectric substrate (9), and one end of the first output feeder (2) is connected with one end of the second output feeder (3); a first resonance unit, a second resonance unit, a third resonance unit and a fourth resonance unit are sequentially coupled and connected between the input port feeder line (1) and the joints of the first output feeder line (2) and the second output feeder line (3), the first resonance unit, the second resonance unit, the third resonance unit and the fourth resonance unit have the same structure and respectively comprise a band-pass resonator and two band-stop resonators with different sizes; a port isolation resistor (101) is arranged between the first output feeder (2) and the second output feeder (3).
2. The three-passband power-dividing filter with high frequency selectivity according to claim 1, wherein the input port feed line (1) comprises a first 50 ohm microstrip conduction band (11) and a first quarter-wavelength microstrip transmission line (71), one end of the first 50 ohm microstrip conduction band (11) is close to the first side edge (9a) of the dielectric substrate (9), and the other end is connected with one end of the first quarter-wavelength microstrip transmission line (71); the connection position of a first 50 ohm microstrip line conduction band (11) and a first side edge (9a) of the dielectric substrate (9) is an input end, and a first quarter-wavelength microstrip transmission line (71)The other end is coupled with the first resonance unit; the first quarter-wave microstrip transmission line (71) has a length L1Width of W1。
3. The three-passband power-dividing filter with high frequency selectivity according to claim 1, wherein the first output feeder (2) comprises a second 50 ohm microstrip conduction band (21) and a second quarter-wavelength microstrip transmission line (75), one end of the second 50 ohm microstrip conduction band (21) is close to the first side (9a) of the dielectric substrate (9), and the other end is connected with one end of the second quarter-wavelength microstrip transmission line (75); the connection part of the second 50 ohm microstrip line conduction band (21) and the first side edge (9a) of the dielectric substrate 9 is a first output end; the second quarter-wave microstrip transmission line (75) has a length L5Width of W5。
4. A three-passband power-dividing filter with high frequency selectivity according to claim 3, wherein the second output feeder (3) comprises a third 50 ohm microstrip conduction band (31) and a third quarter-wavelength microstrip transmission line (76), one end of the third 50 ohm microstrip conduction band (31) is close to the first side (9a) of the dielectric substrate (9), and the other end is connected with one end of the third quarter-wavelength microstrip transmission line (76); the joint of a third 50 ohm microstrip conduction band (31) and the first side edge (9a) of the dielectric substrate (9) is a second output end, a port isolation resistor (101) is arranged between one end of the second quarter-wavelength microstrip transmission line (75) and one end of the third quarter-wavelength microstrip transmission line (76), the other end of the second quarter-wavelength microstrip transmission line (75) is connected with the other end of the third quarter-wavelength microstrip transmission line (76), and the joint is in coupling connection with the fourth resonance unit; the third quarter-wave microstrip transmission line (76) has a length L5Width of W5(ii) a The resistance value of the port isolation resistor (101) is R.
5. The three-pass band-pass power division filter with high frequency selectivity of claim 1, wherein the first resonance unit comprises a first band-stop resonator(41) The band-pass resonator comprises a second band-stop resonator (42), a first band-pass resonator (51), a fourth quarter-wavelength microstrip transmission line (61) and a fifth quarter-wavelength microstrip transmission line (62), wherein the fourth quarter-wavelength microstrip transmission line (61) is connected between the first band-pass resonator (51) and the first band-stop resonator (41), and the fifth quarter-wavelength microstrip transmission line (62) is connected between the first band-pass resonator (51) and the second band-stop resonator (42); the end part of the first band-stop resonator (41), the end part of the second band-stop resonator (42) and the end part of the first band-pass resonator (51) are connected with a grounding column (81); the first band-pass resonator (51) has a length L11Width of W11(ii) a The first band-resistance resonator (41) has a length L12Width of W12(ii) a The second band-stop resonator (42) has a length L13Width of W13(ii) a The fourth quarter-wave microstrip transmission line (61) has a length Lq1Width of Wq1(ii) a The length of the fifth quarter-wavelength microstrip transmission line (62) is Lq2Width of Wq2。
6. The three-band pass power division filter with high frequency selectivity according to claim 1, wherein the second resonance unit comprises a third band-stop resonator (43), a fourth band-stop resonator (44), a second band-pass resonator (52), a sixth quarter-wavelength microstrip transmission line (63) and a seventh quarter-wavelength microstrip transmission line (64), the sixth quarter-wavelength microstrip transmission line (63) is connected between the second band-pass resonator (52) and the third band-stop resonator (43), and the seventh quarter-wavelength microstrip transmission line (64) is connected between the second band-pass resonator (52) and the fourth band-stop resonator (44); the end part of the third band-stop resonator (43), the end part of the fourth band-stop resonator (44) and the end part of the second band-pass resonator (52) are connected with a grounding column (81); the second band-pass resonator (52) has a length L11Width of W11(ii) a The fourth band-resistance resonator (44) has a length L12Width of W12(ii) a The third band-stop resonator (43) has a length L13Width of W13(ii) a The seventh quarter-wave microstrip transmission line (64) has a length ofLq1Width of Wq1(ii) a The sixth quarter-wave microstrip transmission line (63) has a length Lq2Width of Wq2。
7. The three-band pass power splitting filter with high frequency selectivity according to claim 1, wherein the third resonance unit comprises a fifth band-stop resonator (45), a sixth band-stop resonator (46), a third band-pass resonator (53), an eighth quarter-wavelength microstrip transmission line (65) and a ninth quarter-wavelength microstrip transmission line (66), the eighth quarter-wavelength microstrip transmission line (65) is connected between the third band-pass resonator (53) and the fifth band-stop resonator (45), and the ninth quarter-wavelength microstrip transmission line (66) is connected between the third band-pass resonator (53) and the sixth band-stop resonator (46); the end part of the fifth band-stop resonator (45), the end part of the sixth band-stop resonator (46) and the end part of the third band-pass resonator (53) are connected with a grounding column (81); the third band-pass resonator (53) has a length L11Width of W11(ii) a The sixth band-stop resonator (46) has a length L12Width of W12(ii) a The fifth band-resistance resonator (45) has a length L13Width of W13(ii) a The ninth quarter-wave microstrip transmission line (66) has a length Lq1Width of Wq1(ii) a The eighth quarter-wavelength microstrip transmission line (65) has a length Lq2Width of Wq2。
8. The three-band pass power splitting filter with high frequency selectivity according to claim 1, wherein the fourth resonance unit comprises a seventh band-stop resonator (47), an eighth band-stop resonator (48), a fourth band-pass resonator (54), a fourteenth quarter-wavelength microstrip transmission line (67) and an eleventh quarter-wavelength microstrip transmission line (68), the fourteenth band-pass resonator (54) and the fourth resonance unit comprise the seventh band-stop resonator (47) with the fourteenth quarter-wavelength microstrip transmission line (67) connected therebetween, and the eleventh quarter-wavelength microstrip transmission line (68) connected between the fourth band-pass resonator (54) and the eighth band-stop resonator (48); the seventh band-stop resonator(47) The end of the fourth band-stop resonator (54), the end of the eighth band-stop resonator (48) and the end of the eighth band-pass resonator (48) are connected with a grounding column (81); the fourth band-pass resonator (54) has a length L11Width of W11(ii) a The eighth band-stop resonator (48) has a length L12Width of W12(ii) a The length of the seventh band-stop resonator (47) is L13Width of W13(ii) a The eleventh quarter-wave microstrip transmission line (68) has a length Lq1Width of Wq1(ii) a The length of the fourteenth one-fourth wavelength microstrip transmission line (67) is Lq2Width of Wq2。
9. A three-pass band-pass power-splitting filter with high frequency selectivity according to claim 5, characterized in that the first band-pass resonator (51) is connected to a first quarter-wave microstrip transmission line (71), and the first band-pass resonator (51) is connected to the second band-pass resonator (52) by a twelfth quarter-wave microstrip transmission line (72); the second band-pass resonator (52) is connected with the third band-pass resonator (53) through a thirteenth quarter-wave microstrip transmission line (73); the third band-pass resonator (53) is connected with the fourth band-pass resonator (54) through a fourteenth quarter-wave microstrip transmission line (74); the first band-pass resonator (51) is connected with the fourth band-pass resonator (54) through edge negative coupling, and the joint of the second quarter-wavelength microstrip transmission line (75) and the third quarter-wavelength microstrip transmission line (76) is connected with the fourth band-pass resonator (54); the twelfth quarter-wave microstrip transmission line (72) has a length L2Width of W2(ii) a The thirteenth quarter-wave microstrip transmission line (73) has a length L3Width of W3(ii) a The fourteenth quarter-wave microstrip transmission line (74) has a length L4Width of W4。
10. A three-pass band power splitting filter with high frequency selectivity as claimed in any one of claims 5 to 8, wherein the end of the grounding post (81) remote from the resonator end is connected to the metallic ground plate (8) through the dielectric substrate (9).
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