CN113376712A - Non-etching super-structure surface based on spatial regular doping and compatible with traditional optical thin film - Google Patents
Non-etching super-structure surface based on spatial regular doping and compatible with traditional optical thin film Download PDFInfo
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Abstract
The invention discloses an etching-free super-structure surface based on space rule doping and compatible with a traditional optical film, wherein the doped super-structure surface is formed by arranging units in a plurality of doped regions; the specific area of the semiconductor film material is doped, and the dielectric function of the doped area unit is changed, so that the polarization, the propagation mode, the phase and the like of electromagnetic waves are efficiently regulated and controlled, and the doped metamaterial surface is called. The beneficial effects of the invention are that compared with the traditional super-structured surface, the doped super-structured surface has the unique advantages: because the micro-nano structure is not etched, the surface of the film is smooth and high in flatness, and other functional optical films such as an optical antireflection film and the like can be further plated on the surface of the film without changing the optical property of the super-structure surface. In other words, the doped metamaterial surface can realize the focusing function of a common metamaterial surface, and is compatible with the plating of a functional film like the traditional lens surface, so that the performance is further improved and expanded.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an etching-free super-structure surface based on spatial regular doping and compatible with a traditional optical film.
Technical Field
In recent years, the Metasurface (metasface) has attracted much attention as an innovative concept in the optical field. The super-structure surface is a two-dimensional functional plane structure composed of a plurality of sub-wavelength nano structure units, the high-efficiency regulation and control of the intensity, the phase, the polarization and the like of a space optical field can be realized by utilizing the interaction of the sub-wavelength structure and an incident optical field, and the traditional optical elements and functions are expected to be overturned from the principle level. The lens made of the super-structure surface, namely the super-structure lens (Metalens), is light, thin and flat, can realize effective focusing and imaging of light waves, and can possibly replace a complex and heavy lens group in a traditional optical system, so that products such as a mobile phone, a camera, a monitoring camera and the like become small, exquisite, light, thin and light, thereby becoming a revolutionary technology in the optical field and leading the heat of a research.
At present, in the aspect of the design of a super-structure surface structure, the super-structure surface is mainly divided into a metal antenna array super-structure surface full-medium super-structure surface and a metal-medium mixed super-structure surface. However, in any design structure, there are specific scientific or technical obstacles behind the design structure, which restrict the practical realization of the design structure. Specifically, the metal nanostructure surface and the metal-dielectric hybrid nanostructure surface generate strong loss due to the interaction between electromagnetic waves and metal free electrons, and thus the transmission and light energy utilization of a lens designed based on the metal aperture or the metal nano-antenna structured nanostructure surface array are not high. The super-structure surface designed based on the all-dielectric nano unit structure has a great improvement on the light energy utilization rate compared with the metal super-structure surface, but the improvement on the light energy utilization rate is limited due to the defects of unit structure scattering and mismatching of the equivalent admittance of the super-structure surface layer with an incident medium and a substrate. In addition, the dielectric metamaterial surface is usually composed of high refractive index dielectric pillars with length comparable to the wavelength of light, as shown in fig. 1a, when the dielectric pillars are used in the middle and far infrared bands, the aspect ratio of the dielectric pillars is large, the technical processing difficulty is very large, and even the dielectric pillars are difficult to prepare.
Disclosure of Invention
In view of the defects of the prior art, the present invention aims to provide an etch-free super-structured surface based on spatial regular doping and compatible with the traditional optical thin film. The invention provides a method for Doping a super-structure surface (Doping metassurface) based on the space regular Doping of a semiconductor film. The doped super-structure surface of the invention has no etched micro-nano structure, thus being smooth and flat and allowing the addition of other optical functional films such as an antireflection film and the like, thereby greatly improving and enriching the optical performance on the basis of ensuring the focusing characteristic of the super-structure surface.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
the etching-free super-structure surface is doped based on a spatial rule and is compatible with a traditional optical film, and the doped super-structure surface is formed by arranging units in a plurality of doped regions; wherein, by doping in a specific region of the semiconductor thin film material, the dielectric function of a doped region formed by a plurality of doped units is changed, thereby constructing the doped superstructure surface.
It should be noted that the doped superstructure surface includes two interfaces, which are an interface between the incident medium and the doped layer and an interface between the doped layer and the substrate.
It should be noted that the formula applied to the phase gradient of the doped superstructure surface is:
the phase change introduced by the doped superstructure surface consists of three parts, namely an upper interface, a lower interface and a middle doped layer, and the phase gradient caused by refractive index anisotropy of light passing through the doped layer is small and can be ignored because the thickness of the doped layer is far smaller than the wavelength of light, so that the phase change between 0 and 2 pi can be realized only by reasonably designing the phase gradient of the upper interface and the lower interface.
It should be noted that the doped superstructure surface may be In doped with Sn In the mid-infrared band2O3A doped nanostructured surface formed by the thin film.
The film also comprises an antireflection film, and the material of the antireflection film is selected to be transparent In medium-wave infrared and is transparent to the substrate and the In2O3ZnS and SiO with firm film combination2The material is prepared.
The beneficial effects of the invention are that compared with the traditional super-structured surface, the doped super-structured surface has the unique advantages: because the micro-nano structure is not etched, the surface of the film is smooth and high in flatness, and other functional optical films such as an optical antireflection film and the like can be further plated on the surface of the film without changing the optical property of the super-structure surface. In other words, the doped metamaterial surface can realize the focusing function of a common metamaterial surface, and is compatible with the plating of a functional film like the traditional lens surface, so that the performance is further improved and expanded.
Drawings
In fig. 1, (a) is a conventional super-surface structure, (b) is a thin film doped super-surface, (c) is a doped super-material, (d) is a schematic diagram of gradient phase mutation introduced by light waves through an interface, and (e) is a schematic diagram of a doped super-surface prepared with an optical thin film.
Fig. 2 shows the doped superstructure surface design and its phase variation. (a) The doped super-structure surface and a unit structure thereof have the length of 0.8 mu m, the width of 0.2 mu m, the thickness of a thin film of 0.1 mu m and the period of 1 mu m by 1 mu m; (b) at the wavelength of 4.5 mu m, the phase changes as a function of the azimuth angle of the doped region, and the phase changes linearly at 0-2 pi; (c) as a function of the dielectric of the doped region; (d) and (e) the linear polarized light with the vibration direction parallel and vertical to the long axis of the doped region is distributed on the surface of the unit structure in an amplitude mode.
FIG. 3 is a diagram of a focusing lens field profile for different super-surface layer thicknesses; (a) the thickness of the super surface layer is 0.1 μm; (b) the super-surface layer thickness was 0.2. mu.m.
FIG. 4 is a graph showing the intensity distribution of the optical field of the super-surface lens at the wavelength of 3.5 μm, 4.5 μm and 5.5 μm; (a) no anti-reflection film is used; (b) and an anti-reflection film is arranged.
FIG. 5 is a comparison of transmittance and light energy utilization of a doped textured lens with or without an anti-reflection film; (a) transmittance curves of 3.0-6.0 μm wave band (b) light energy utilization rate of 3.5 μm, 4 μm, 4.5 μm, 5 μm, 5.5 μm wavelength.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The present invention will be further described with reference to the accompanying drawings, and it should be noted that the present embodiment is based on the technical solution, and the detailed implementation and the specific operation process are provided, but the protection scope of the present invention is not limited to the present embodiment.
The invention relates to an etching-free super-structure surface which is doped based on a spatial rule and compatible with a traditional optical film, wherein the doped super-structure surface is formed by arranging units in a plurality of doped regions; wherein, by doping in a specific region of the semiconductor thin film material, the dielectric function of a doped region formed by a plurality of doped units is changed, thereby constructing the doped superstructure surface.
It should be noted that the doped superstructure surface includes two interfaces, which are an interface between the incident medium and the doped layer and an interface between the doped layer and the substrate.
It should be noted that the formula applied to the phase gradient of the doped superstructure surface is:
the phase change introduced by the doped superstructure surface consists of three parts, namely an upper interface, a lower interface and a middle doped layer, and the phase gradient caused by refractive index anisotropy of light passing through the doped layer is small and can be ignored because the thickness of the doped layer is far smaller than the wavelength of light, so that the phase change between 0 and 2 pi can be realized only by reasonably designing the phase gradient of the upper interface and the lower interface.
It should be noted that the doped superstructure surface may be In doped with Sn In the mid-infrared band2O3A doped nanostructured surface formed by the thin film.
The film also comprises an antireflection film, and the material of the antireflection film is selected to be transparent In medium-wave infrared and is transparent to the substrate and the In2O3ZnS and SiO with firm film combination2The material is prepared.
Examples
The invention relates to a novel super-structure surface based on semiconductor film space regular doping. By doping a specific region of a semiconductor thin film material by a technical means such as plasma implantation to change a dielectric function of the doped region, an array structure similar to a conventional metamaterial surface can be designed and constructed to realize efficient control of polarization, propagation mode, phase and the like of electromagnetic waves, as shown in fig. 1 b-c. The doped region is equivalent to the microstructure of the traditional super-structure surface, so that a novel super-structure surface, namely a doped super-structure surface (diode surface), can be manufactured through reasonable design of the units and arrangement of the doped region.
By the design scheme, generalized refraction Law (generalized Snell's Law) can be applied to the surface of the doped super structure. Fig. 1d is a schematic diagram of phase change of a doped metamaterial surface, and it can be seen from fig. 1d that the doped metamaterial surface has two interfaces, which are an interface of an incident medium and a doped layer and an interface of the doped layer and a substrate, respectively. The general refraction law is respectively applied to the interfaces of the incident medium and the doped layer and the substrate to obtain the following results:
wherein theta isi，θdAnd thetatAngle of incidence and angle of refraction, n, for two interfacesi，nd，ntIs the refractive index of the incident medium, the super-structure surface layer and the substrate,
and
a phase gradient is generated for two interfaces of the super-structure surface layer.
Equivalent refractive index n in the super-surface layer due to the long axes of the vertical and parallel doped regions⊥And n||The difference is that the refractive index of each unit structure is anisotropic, so that the phase gradient is generated when the light wave passes through
Since the doped layer is much smaller than the wavelength of light, we can approximate the phase gradient using equation (3)
Wherein h is the thickness of the super surface layer, and theta is the counterclockwise rotation angle of the doped region.
And (3) correspondingly adding the equation (1), the equation (2) and the equation (3) left and right to obtain an equation suitable for calculating the relative gradient of the doped super-structure surface:
from the formula (4), it can be seen that the phase change introduced by the doped super-surface is composed of three parts, namely an upper interface, a lower interface and a middle doped layer, and the phase gradient caused by refractive index anisotropy of light passing through the doped layer is small and can be ignored because the thickness of the doped layer is far smaller than the wavelength of light, so that the phase change in the range of 0-2 pi can be realized only by reasonably designing the phase gradient of the upper interface and the lower interface.
In order to verify the correctness of the assumption of the doped super-structure surface, a doped super-structure surface lens is designed, and the optical properties of the doped super-structure surface lens are subjected to specific simulation. Sn-doped In for the mid-infrared band is considered here2O3The film has a super-structured surface, and optical properties of a super-structured lens made of the film are simulated and calculated by adopting an FDTD method. Dielectric function ε of doped region according to Drude modelmCan be expressed as incident light angular frequency omega and doping free electron concentration NeFunction of (c):
wherein q, γe，ε∞，me，ε0Electron charge, electron damping rate, high frequency dielectric constant (epsilon) of the doped region∞3.8), electron effective mass (m)e＝1.4m0) And a vacuum dielectric constant. The unit structure of the doped super-surface lens and the optical properties obtained by simulation calculation are shown in fig. 2, wherein fig. 2(a) shows the doped super-surface and a unit structure thereof, the diameter of the whole super-surface lens is 30 μm, and the unit structures with the same azimuth angle phi form a concentric ring. The direction angle phi is the included angle between the Y axis and the long axis direction of the super-structure surface, the substrate is made of Si material, and the free electron concentration of the doped region is 8 multiplied by 1020cm-3The individual doped regions are cuboids of length 0.8 μm, width 0.2 μm, thickness 0.1 μm and oriented in a fixed direction. The spatial regular arrangement of the doped region units forms a doped super-structured surface with a period of 1 μm by 1 μm. The incident beam was a left-hand circularly polarized planar light of 30 μm diameter. FIG. 2(b) shows that the phase covers the range of 0-2 pi as the azimuthal angle phi of the doped region changes when left-handed circularly polarized light with a wavelength of 4.5 μm is incident. FIG. 2(c) is a dielectric function of the doped region in the 3 μm-6 μm band. Fig. 2(d) and (e) are amplitude distributions of linearly polarized light in the vibration directions parallel and perpendicular to the long axis of the doped region on the surface of the cell structure, respectively, and it is obvious from the amplitude distributions in the figures that the scattering difference of the doped region for light in different polarization directions is very large. The super-structure surface lens adopts the distribution of a hyperboloid phase field (longitudinal spherical aberration elimination hyperboloid phase) to construct a spherical wave front, and for a positive incident beam with the wavelength of lambda, the phase field distribution is
Where f is the focal length of the lens and (x, y) is the position coordinates of the nano-cell structure. FIG. 3 is a graph showing the optical field distribution of a focusing lens with different thickness (0.1 μm, 0.2 μm) of the super-structured surface layer at the wavelengths of 3.5 μm, 4.5 μm and 3.5 μm. From FIG. 3, it is seen that the focused focal spot size and intensity of the two thickness super-structure surfaces are substantially the same, which shows that the super-surface lens is not significantly changed by the increase of the thickness of the super-structure surface layerThe focal length of (c). This can be explained by equation (4), where equation (4) illustrates that the phase change introduced by the doped metamaterial surface is mainly related to the refractive index at the interface and both sides, and the thickness of the metamaterial surface layer is much smaller than the wavelength, so that the contribution to the phase gradient is negligible. In fig. 3, the light intensity of the 0.2 μm thick doped heterostructure surface is greater than that of the 0.1 μm thick doped heterostructure surface focus because the doped layer itself has an anti-reflection effect on the substrate, and the anti-reflection effect of the 0.2 μm thick doped layer at a wavelength of 4.5 μm is greater than that of the 0.1 μm thick doped layer, so the focus intensity is increased when the doped layer has a 0.2 μm thick super surface. In general, the results of the simulation calculations indicate that the doped nanostructured surface of the present invention is reasonable and can be applied in the fabrication of actual nanostructured surfaces.
Furthermore, as the micro-nano structure is not etched, functional films such as an antireflection film and the like can be plated on the surface of the doped super-structure to further improve the performance of the doped super-structure. In order to verify the influence of the optical film on the performance of the doped ultrastructural surface, an antireflection film for a substrate is designed by combining an ultrastructural surface layer, the dielectric function of the ultrastructural surface is calculated by adopting an equivalent medium theory, and then the dielectric functions in the vertical wave vector direction and the horizontal wave vector direction are respectively expressed as:
where f' is the doping duty cycle. The material of the antireflection film is selected to be transparent In the middle wave infrared and is connected with the substrate and In2O3ZnS and SiO with firm film combination2A material. Calculating the antireflection film by adopting a multilayer film characteristic matrix:
wherein deltaiIs the ith film phase thickness, ηiIs the admittance of the ith layer of material,ηN+1and (4) substrate admittance. In the calculation, let the effective admittance
(n0 is the refractive index of air). The simulation calculation shows that the antireflection film should be made of ZnS with the thickness of 0.4 μm and SiO with the thickness of 0.1 μm2And (4) forming. FIG. 4 compares the optical field distribution at different wavelengths (3.5 μm, 4.5 μm, 5.5 μm) for a doped nanostructured surface without and with an antireflective coating. As can be seen from fig. 4, as the wavelength increases, the focal length decreases; this is because light having a large wavelength has a higher diffraction ability; under the condition of the anti-reflection film, the light intensity at the focal point is far greater than that without the anti-reflection film, but the focal point position is not influenced by the anti-reflection film and basically does not change. This shows that the antireflection film only increases the transmittance of the super-surface and has no influence on the focusing performance. When no antireflection film is arranged, the full widths at half maximum (FWHM) at different wavelengths (3.5 μm, 4.5 μm and 5.5 μm) are 4.45 μm, 4.60 μm and 4.51 μm in sequence; the full width at half maximum (FWHM) in the presence of the antireflection film was 4.43 μm, 4.57 μm, and 4.49 μm in this order. It can be seen that the FWHM of the same wavelength is substantially the same, indicating that the antireflection film does not affect the FWHM size.
FIG. 5 shows the transmittance curves of the 3.5-5.5 μm wavelength bands obtained by simulation calculation and the light energy utilization rates at the wavelengths of 3.5 μm, 4 μm, 4.5 μm, 5 μm and 5.5 μm. The transmittance curve shows that the transmittance of the super-structured surface lens with the antireflection film is kept about 90 percent and is far higher than that without the antireflection film at the wave band of 3.0-6.0 mu m, and the average transmittance is higher than 35 percent; in medium wave infrared, the transmission rate of the super surface with the highest known efficiency can reach about 75 percent at present and is lower than that of the design, which shows that the doped super surface combined with the antireflection film structure is a very high-efficiency method; the light energy utilization rate is calculated by adopting the light energy ratio of the focal spot to the total incident light energy, and the light energy utilization rate of the lens with the anti-reflection film on the super-structure surface is far higher than that of the lens without the anti-reflection film, the average light energy utilization rate is higher than 27%, the highest light energy utilization rate is up to 82.2%, and the effect of the anti-reflection film on improving the efficiency of the super-structure surface is great.
Therefore, the invention researches the characteristics of the medium wave infrared band doped super-structure surface lens by the technical scheme of doping and changing the dielectric function, and researches the influence of the antireflection film on the transmission of the doped super-structure surface lens and the light energy utilization rate based on the property that the doped super-structure surface can be added with the functional optical film. Simulation calculation shows that the transmittance of the super-surface lens with the antireflection film is far higher than that of the lens without the antireflection film by more than 35% on average in the wave band transmittance of 3.5-5.5 μm, and the light energy utilization rate of the super-surface lens with the antireflection film is more than 27% on average in comparison with that of the lens without the antireflection film, and the highest light energy utilization rate is 82.2%. The structure of the doped super-structure surface combined with the antireflection film is expected to solve the problems that the efficiency of the metal super-structure surface in medium and long wave infrared is low and the depth-to-width ratio of the full-medium super-structure surface is large and difficult to process. The method can be applied to the fields of plane lenses, vortex phase plates, holographic phase plates, polarization converters, wavelength selectors and the like, and brings new light for the design of the super-structured surface device.
Various modifications may be made by those skilled in the art based on the above teachings and concepts, and all such modifications are intended to be included within the scope of the present invention as defined in the appended claims.
Claims (5)
1. The non-etching super-structure surface is doped based on a spatial rule and is compatible with a traditional optical film, and is characterized in that the doped super-structure surface is formed by arranging units in a plurality of doped regions; the dielectric function of a doped region formed by a plurality of doped units is changed by doping a specific region of the semiconductor film material, so that the doped super-structure surface is constructed.
2. The etch-free microstructured surface based on spatially-regular doping and compatible with conventional optical thin films according to claim 1, wherein the doped microstructured surface comprises two interfaces, namely an interface of the incident medium and the doped layer and an interface of the doped layer and the substrate.
3. The etchingless microstructured surface based on spatially regular doping and compatible with conventional optical films according to claim 1, characterized by a formula for the phase gradient of the doped microstructured surface:
the phase change introduced by the doped superstructure surface consists of three parts, namely an upper interface, a lower interface and a middle doped layer, and the phase gradient caused by refractive index anisotropy of light passing through the doped layer is small and can be ignored because the thickness of the doped layer is far smaller than the wavelength of light, so that the phase change between 0 and 2 pi can be realized only by reasonably designing the phase gradient of the upper interface and the lower interface.
4. The semiconductor thin film based spatially regularly doped and optical thin film compatible nanostructured surface of any one of claims 1 to 3, wherein the doped nanostructured surface is Sn doped In the mid-infrared band2O3A doped nanostructured surface formed by the thin film.
5. The etch-free nanostructured surface based on spatially regular doping and compatible with conventional optical thin films according to claim 4, further comprising an anti-reflection film, wherein the material of the anti-reflection film is selected to be transparent In the medium wave infrared and to the substrate and the In2O3ZnS and SiO with firm film combination2The material is prepared.
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Application publication date: 20210910 |
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