CN113373519A - Nano copper crystal growth experiment simulation device and method - Google Patents
Nano copper crystal growth experiment simulation device and method Download PDFInfo
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- CN113373519A CN113373519A CN202110690630.6A CN202110690630A CN113373519A CN 113373519 A CN113373519 A CN 113373519A CN 202110690630 A CN202110690630 A CN 202110690630A CN 113373519 A CN113373519 A CN 113373519A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
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Abstract
The invention relates to a nano copper crystal growth experiment simulation device and a method, the device comprises an air compressor, a liquid adding container and a plurality of reactors, the reactors are arranged in series, the air compressor is connected with the liquid adding container, the liquid adding container is connected with the reactors at the head ends of the reactors in series through liquid adding pipelines, and a first pressure valve and a pressure gauge are respectively arranged on inlet pipelines of the reactors in series. According to the invention, a plurality of reactors connected in series are utilized, each reactor can independently control the temperature and the pressure, chalcopyrite in the process of simulating ore-forming hydrothermal fluid flow evolution is synthesized by utilizing the reactors, chalcopyrite samples generated under different temperature and pressure conditions are obtained, the whole synthesis process is automatically completed in a closed system, and the automation degree is improved.
Description
Technical Field
The invention relates to the field of hydrothermally synthesized chalcopyrite crystals, in particular to a device and a method for simulating a growth experiment of a nano-copper crystal.
Background
As the most important Cu-S standard type minerals, chalcopyrite with different production states and mineral combination characteristics can provide important marks for the ore searching direction. Chalcopyrite is sensitive to changes in the physicochemical conditions of hydrothermal fluids and can provide important information about the environment of hydrothermal mineralization. The simulation of hydrothermal activity environment and the mineralization process of sulfides by combining modern scientific technology is one of the necessary means for researching the complex geological process of hydrothermal activity. The growth mode of the chalcopyrite nano-micron crystal shows a path and a process different from the growth of a macroscopic crystal in the traditional theory, and the research on the growth mechanism has important theoretical significance and practical value in the aspects of understanding the forming environment and the distribution rule of the chalcopyrite in a natural geologic body, disclosing the formed complex geological action process, obtaining the technical method for preparing the nano mineral material and the like.
At present, the nano-micron chalcopyrite is mainly prepared by a hydrothermal method, and the existing experiment is generally carried out under the conditions of a single reaction kettle, a standing environment and a fixed temperature and pressure. However, the single kettle-standing-fixed temperature and pressure device cannot simulate the growth process of the nano-micron chalcopyrite in the hydrothermal mineralization process under the condition of temperature and pressure change of a flowing system.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a device and a method for simulating the growth experiment of a nano copper crystal.
The technical scheme for solving the technical problems is as follows: the utility model provides a nanometer copper crystal growth experiment analogue means, includes air compressor, liquid feeding container and a plurality of reactor, and is a plurality of the reactor is established ties and is arranged, air compressor with the liquid feeding container is connected, the liquid feeding container is connected through the reactor that liquid feeding pipeline and a plurality of series connection reactors are located the head end, is equipped with first pressure valve and manometer on the inlet pipeline of the reactor of a plurality of series connections respectively.
The invention has the beneficial effects that: according to the invention, a plurality of reactors connected in series are utilized, each reactor can independently control the temperature and the pressure, chalcopyrite in the process of simulating ore-forming hydrothermal fluid flow evolution is synthesized by utilizing the reactors, chalcopyrite samples generated under different temperature and pressure conditions are obtained, the whole synthesis process is automatically completed in a closed system, and the automation degree is improved.
On the basis of the technical scheme, the invention can be further improved as follows.
The system further comprises a supercharger, wherein the supercharger is respectively connected with inlet pipelines of the plurality of reactors connected in series through a supercharging pipeline, and a second pressure valve is arranged on the supercharging pipeline.
The beneficial effect of adopting the further scheme is that: a pressure booster may be used to provide pressure to each of the reactors in series.
Further, the maximum pressure provided by the pressure booster is not more than 50 Mpa.
Furthermore, outlet pipelines of the reactors connected in series are respectively connected with a third pressure valve; and outlet branches are respectively connected to outlet pipelines of the reactors connected in series, the outlet branches are connected with a condensing tank, and the outlet branches are connected with a fourth pressure valve.
The beneficial effect of adopting the further scheme is that: the solution in each stage of reactor is guided into the condensing tank under the control of the fourth pressure valve of the outlet branch, and the reaction liquid after the experiment of each reactor is finished can be cooled by using the condensing tank.
Furthermore, a fifth pressure valve is arranged on the liquid adding pipeline, and a sixth pressure valve is arranged on the pipeline between the air compressor and the liquid adding container.
Further, a heating device is connected to the reactor, and the heating temperature of the heating device is not more than 500 ℃.
The beneficial effect of adopting the further scheme is that: the heating device provides the required reaction temperature for the reactor.
Further, three reactors are arranged in series.
A method for simulating a growth experiment of a nano-copper crystal comprises the following steps:
s1, the liquid adding container holds the prepared initial solution, and the initial solution is injected into a first-stage reactor at the head end of a plurality of reactors arranged in series under the pressure provided by an air compressor;
s2, monitoring the pressure of the reactor to be tested through the pressure gauge corresponding to each reactor arranged in series, and performing the test after the pressure of the reactor to be tested reaches the pressure required by the test; the first-stage reactor at the head end reacts after the pressure of the first-stage reactor reaches the experimental requirement pressure to obtain a first-stage reaction solution, and the first-stage reaction solution is introduced into other first-stage reactors connected in series with the first-stage reactor at the head end to react; in each reactor in series, the pressure of the reactor to be tested is lower than that of the previous reactor in series, so that the reaction solution flows into the downstream reactor by means of a pressure difference.
The invention has the beneficial effects that: according to the method, a plurality of reactors connected in series are utilized, each reactor can independently control the temperature and the pressure, chalcopyrite in the process of simulating ore-forming hydrothermal fluid flow evolution is synthesized by the reactors, chalcopyrite samples generated under different temperature and pressure conditions are obtained, the whole synthesis process is automatically completed in a closed system, and the automation degree is improved.
Further, in S2, the pressure of the reactor to be tested is monitored by the pressure gauges corresponding to the reactors arranged in series, if the pressure of the reactor to be tested does not reach the experimental requirement pressure, the reactor to be tested is pressurized by the pressure booster, and after the pressure of the reactor to be tested reaches the experimental requirement pressure, the first pressure valve of the inlet pipeline of the reactor to be tested and the second pressure valve of the pressurization pipeline are closed.
Further, in S2, the reactor to be tested is heated by the heating device, and after the set temperature of the reactor is reached, whether the pressure displayed by the pressure gauge of the inlet pipeline of the reactor to be tested reaches the pressure required by the test is observed.
Drawings
FIG. 1 is a schematic structural flow diagram of a simulation apparatus for a growth experiment of a nano-copper crystal according to the present invention.
In the drawings, the components represented by the respective reference numerals are listed below:
1. a first stage reactor; 2. a secondary reactor; 3. a tertiary reactor; 4. a heating device; 5. an air compressor; 6. a liquid adding container; 7. a supercharger; 8. a first pressure valve; 9. a pressure gauge; 10. a second pressure valve; 11. a third pressure valve; 13. a fourth pressure valve; 14. a condensing tank; 15. a fifth pressure valve; 16. and a sixth pressure valve.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
Example 1
As shown in fig. 1, the experimental simulation apparatus for growth of nano-copper crystal of this embodiment includes an air compressor 5, a liquid adding container 6 and a plurality of reactors, and is a plurality of the reactors are arranged in series, the air compressor 5 with the liquid adding container 6 is connected, the liquid adding container 6 is connected with the reactor at the head end of the plurality of reactors through a liquid adding pipeline, and a first pressure valve 8 and a pressure gauge 9 are respectively arranged on the inlet pipeline of the plurality of reactors in series.
The air compressor 5 of the present embodiment is used to provide pressure and power to the booster 7 and refill container 6. The liquid adding container 6 is used for containing the prepared initial solution, and the reaction solution is injected into the primary reactor 1 under the pressure and power action provided by the air compressor 5.
The reactor of the embodiment is used as a main place for crystal growth and is made of high-temperature-resistant, high-pressure-resistant and corrosion-resistant materials.
As shown in fig. 1, the simulation apparatus of this embodiment further includes a pressure booster 7, where the pressure booster 7 is connected to the inlet pipelines of the plurality of reactors connected in series through pressure boosting pipelines, and the pressure boosting pipelines are provided with second pressure valves 10. A pressure booster may be used to provide pressure to each of the reactors in series.
Wherein the air compressor 5 can be used to provide pressure and power to the booster 7 and the refill container. The maximum pressure provided by the supercharger 7 is not more than 50 Mpa.
As shown in fig. 1, the outlet pipelines of a plurality of reactors connected in series are respectively connected with a third pressure valve 11; and outlet branches are respectively connected to outlet pipelines of the reactors connected in series, the outlet branches are connected with a condensing tank 14, and the outlet branches are connected with a fourth pressure valve 13. The solution in each stage reactor is introduced into a condensing tank 14 under the control of a fourth pressure valve 13 of the outlet branch, and the reaction solution after the experiment of each reactor can be cooled by the condensing tank 14.
As shown in fig. 1, a fifth pressure valve 15 is arranged on the liquid charging pipeline, and a sixth pressure valve 16 is arranged on the pipeline between the air compressor 5 and the liquid charging container 6.
As shown in fig. 1, a heating device 4 is connected to the reactor, and the heating device 4 heats the reactor to a temperature of not more than 500 ℃. The reactor is fixed in a heating device 4 which provides the reactor 4 with the required reaction temperature.
As shown in fig. 1, the simulation apparatus of this example includes a plurality of reactors arranged in series, each of which is a first-stage reactor, a second-stage reactor, … …, and an N-stage reactor (N is not less than 2) in order of solution reaction. Each stage of reactor is used as a reaction kettle container for crystal growth, and each stage of reactor is connected with a heating device 4 for heating the corresponding reactor.
As shown in fig. 1, the plurality of reactors in series includes two reactors in series, three reactors in series, four reactors in series, five reactors in series, and the like.
The heating device, the reactors and the pressure gauge of the embodiment form a first-stage independent reaction system, the temperature and the pressure of the reactors of each stage of reaction system can be independently controlled, the reactors are connected through pressure valves, and the pressure valves directionally control fluid to flow from the first-stage reactor to the second-stage reactor and then flow to the N-stage reactor (N is not less than 2) in sequence. And each stage of reactor is connected with a condensing tank, so that the problem of shortage of a nano copper crystal growth experiment simulation device under a flowing system is solved.
The reactors connected in series in this embodiment may be used independently or after being connected in series.
The working process of the experimental simulation device for the growth of the nano-copper crystal in the embodiment is that under the pressure power provided by the air compressor, the initial solution in the liquid adding container can be introduced into the first-stage reactor 1, the solution after reaction in the first-stage reactor can be introduced into the second-stage reactor 2 through the third pressure valve 13 of the outlet pipeline of the first-stage reactor for further reaction, and can also be introduced into the condensing tank 14 through the fourth pressure valve 13 arranged on the outlet branch connected to the outlet pipeline of the first-stage reactor. The solution in the secondary reactor 2 can be introduced into the tertiary reactor 3 for further reaction through a third pressure valve 13 on the outlet pipeline of the secondary reactor 2, or can be introduced into a condensing tank 14 through a fourth pressure valve 13 on an outlet branch connected to the outlet pipeline of the secondary reactor 2. The reaction solution in the third stage reactor 3 can be introduced into the next stage reactor for reaction through the third pressure valve 13 of the outlet pipeline of the third stage reactor 3, or can be introduced into the condensing tank 14 through the fourth pressure valve 13 arranged on the outlet branch connected to the outlet pipeline of the third stage reactor 3. Only three reactors can be arranged, that is, the subsequent reaction is not carried out after the reaction of the third-stage reactor 3 is completed, the reaction solution of the third-stage reactor 3 can be introduced into the condensing tank 14 for cooling, and can also be directly discharged through the third pressure valve 13 on the outlet pipeline of the third-stage reactor 3. The reaction solution in the condensation tank 14 may be discharged and collected through a pressure valve on an outlet line of the condensation tank 14 after being cooled.
Before the experiment simulation device of the embodiment starts each time, all pressure valves are in a closed state, when the device is used each time, a reaction solution is added into a liquid adding container, an air compressor is opened, a sixth pressure valve 16 between the air compressor and the liquid adding container, a fifth pressure valve 15 on the liquid adding pipeline and a second pressure valve 10 on a pressurization pipeline are opened, the reaction solution enters a primary reactor 1 from the liquid adding container under the use of pressure, the heating temperature of a heating device on the primary reactor 1 is set, after the set temperature is reached, a pressure gauge on an inlet pipeline of the primary reactor is observed, if the pressure does not reach the pressure required by the experiment, the primary reactor is pressurized through a pressurizer, the second pressure valve 10 and the first pressure valve 8 are closed after the pressure required by the experiment is reached, after the experiment in the primary reactor is completed, the heating temperature of the heating device on the secondary reactor is set, after the set temperature is reached, opening a third pressure valve 13 of an outlet pipeline of the first-stage reactor and a first pressure valve 8 on an inlet pipeline of the second-stage reactor, enabling the solution in the first-stage reactor to enter the second-stage reactor 2 under the action of pressure difference, and closing the third pressure valve 13 of the outlet pipeline of the first-stage reactor 1 after the solution transfer is completed; then observing a pressure gauge 9 of an inlet pipeline of the secondary reactor 2, if the pressure of the inlet pipeline of the secondary reactor 2 does not reach the pressure required by the experiment, opening a second pressure valve 10 on a pressurization pipeline to pressurize the secondary reactor 2 through a pressurizer 7, and closing the second pressure valve 10 on the pressurization pipeline and a first pressure valve 8 on the inlet pipeline of the secondary reactor 2 after pressurization is finished; after the experiment in the secondary reactor 2 is completed, the heating temperature of a heating device on the secondary reactor 2 is set, after the set temperature is reached, a third pressure valve 13 on an outlet pipeline of the secondary reactor 2 and a first pressure valve 8 on an inlet pipeline of the tertiary reactor 3 are opened, the solution in the secondary reactor 2 enters the tertiary reactor 3 under the action of pressure difference, and after the solution transfer is completed, the third pressure valve 13 on the outlet pipeline of the secondary reactor is closed; observing a pressure gauge on an inlet pipeline of the third-stage reactor 3, if the pressure required by the experiment is not reached, opening a second pressure valve 10 on a pressurizing pipeline to pressurize the third-stage reactor through a pressurizer, after the pressurization is finished, closing the second pressure valve 10 and a first pressure valve 8 on an inlet pipeline of the third-stage reactor 3, after the experiment in the second-stage reactor 2 is finished, opening a fourth pressure valve 13 on an outlet branch connected on an outlet pipeline of the third-stage reactor, enabling reaction liquid to enter a condensing tank, after the transfer of the reaction liquid is finished, closing the fourth pressure valve 13 on the outlet branch connected on the outlet pipeline of the third-stage reactor 3, and collecting the reaction liquid, thereby realizing the hydrothermal synthesis of the nano-micron chalcopyrite based on a three-stage reactor flow system under different temperature and pressure conditions. Of course, in the above experiment, the reaction liquid in the first stage reactor 1 and the second stage reactor 2 can be directly introduced into the condensing tank for cooling and collection through the fourth pressure valve 13 on the outlet branch connected to the outlet pipeline of the first stage reactor 1 and the fourth pressure valve 13 on the outlet branch connected to the outlet pipeline of the second stage reactor 2. The above experimental procedures are only described for the case of three reactors, and for the case of more than three reactors, reference can be made to the experimental procedures of three reactors.
The embodiment can solve the problem that the nano-copper crystal can only be synthesized under the fixed pressure-stabilizing condition, each reactor can independently control the temperature and the pressure by utilizing a plurality of reactors connected in series, chalcopyrite in the process of the flowing evolution of ore hydrothermal solution can be simulated by utilizing the synthesis of the reactors, chalcopyrite samples generated under different temperature and pressure conditions can be obtained, the whole synthesis process is automatically completed in a closed system, and the automation degree is improved.
Example 2
The method for simulating the growth experiment of the nano-copper crystal comprises the following steps:
s1, the liquid adding container 6 holds the prepared initial solution and injects the initial solution into a first-stage reactor 1 at the head end of a plurality of reactors arranged in series under the pressure provided by an air compressor 5;
s2, monitoring the pressure of the reactor to be tested through the pressure gauge 9 corresponding to each reactor arranged in series, and performing the test after the pressure of the reactor to be tested reaches the pressure required by the test; after the pressure of the first-stage reactor 1 at the head end reaches the experimental requirement pressure, reacting to obtain a first-stage reaction solution, and introducing the first-stage reaction solution into other first-stage reactors connected in series with the first-stage reactor 1 at the head end for reaction; in each reactor in series, the pressure of the reactor to be tested is lower than that of the previous reactor in series, so that the reaction solution flows into the downstream reactor by means of a pressure difference.
In the step S2, the pressure of the reactor to be tested is monitored by the pressure gauge 9 corresponding to each of the reactors arranged in series, if the pressure of the reactor to be tested does not reach the required pressure of the test, the reactor to be tested is pressurized by the supercharger 7, and after the pressure of the reactor to be tested reaches the required pressure of the test, the first pressure valve 8 of the inlet pipeline of the reactor to be tested and the second pressure valve 10 of the pressurization pipeline are closed.
In S2, the reactor to be tested is heated by the heating device 4, and after the set temperature of the reactor is reached, whether the pressure indicated by the pressure gauge 9 of the inlet pipeline of the reactor to be tested reaches the pressure required by the test is observed.
The specific experimental process of the method of this embodiment may refer to the working process of the simulation apparatus for the growth experiment of the nano copper crystal in embodiment 1, and will not be described herein again. In the method of this embodiment, when the second reactor 2 is used for the experiment, the first reactor 1 can also be used for the next reaction experiment. The reactors of each stage can be tested simultaneously to improve efficiency and accelerate circulation.
According to the method, a plurality of reactors connected in series are utilized, each reactor can independently control the temperature and the pressure, chalcopyrite in the process of simulating ore-forming hydrothermal fluid flow evolution is synthesized by the reactors, chalcopyrite samples generated under different temperature and pressure conditions are obtained, the whole synthesis process is automatically completed in a closed system, and the automation degree is improved.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. The utility model provides a nanometer copper crystal growth experiment analogue means, its characterized in that, includes air compressor, liquid feeding container and a plurality of reactor, and is a plurality of the reactor is established ties and is arranged, air compressor with the liquid feeding container is connected, the liquid feeding container is connected through the reactor that liquid feeding pipeline and a plurality of series connection reactors are located the head end, is equipped with first pressure valve and manometer on the inlet pipeline of the reactor of a plurality of series connections respectively.
2. The nano-copper crystal growth experiment simulation device according to claim 1, further comprising a pressure booster, wherein the pressure booster is respectively connected with inlet pipelines of the plurality of reactors connected in series through pressure boosting pipelines, and second pressure valves are arranged on the pressure boosting pipelines.
3. The simulation apparatus for growth experiment of nano copper crystal according to claim 2, wherein the maximum pressure provided by the pressure booster is not more than 50 Mpa.
4. The simulation device for the growth experiment of the nano-copper crystal as claimed in claim 1, wherein the outlet pipes of the reactors connected in series are respectively connected with a third pressure valve; and outlet branches are respectively connected to outlet pipelines of the reactors connected in series, the outlet branches are connected with a condensing tank, and the outlet branches are connected with a fourth pressure valve.
5. The simulation device for the growth experiment of the nano-copper crystal according to claim 1, wherein a fifth pressure valve is arranged on the liquid adding pipeline, and a sixth pressure valve is arranged on the pipeline between the air compressor and the liquid adding container.
6. The simulation device for a growth experiment of a nano-copper crystal according to claim 1, wherein a heating device is connected to the reactor, and the heating temperature of the heating device is not more than 500 ℃.
7. The experimental simulation device for growth of nano copper crystal as claimed in claim 1, wherein three reactors are arranged in series.
8. A simulation method for a growth experiment of a nano copper crystal is characterized by comprising the following steps:
s1, the liquid adding container holds the prepared initial solution, and the initial solution is injected into a first-stage reactor at the head end of a plurality of reactors arranged in series under the pressure provided by an air compressor;
s2, monitoring the pressure of the reactor to be tested through the pressure gauge corresponding to each reactor arranged in series, and performing the test after the pressure of the reactor to be tested reaches the pressure required by the test; the first-stage reactor at the head end reacts after the pressure of the first-stage reactor reaches the experimental requirement pressure to obtain a first-stage reaction solution, and the first-stage reaction solution is introduced into other first-stage reactors connected in series with the first-stage reactor at the head end to react; in each reactor in series, the pressure of the reactor to be tested is lower than that of the previous reactor in series.
9. The method of claim 8, wherein in step S2, the pressure of the reactor to be tested is monitored by a pressure gauge corresponding to each of the reactors arranged in series, if the pressure of the reactor to be tested does not reach the required pressure, the reactor to be tested is pressurized by a pressure booster, and after the pressure of the reactor to be tested reaches the required pressure, the first pressure valve of the inlet pipeline of the reactor to be tested and the second pressure valve of the pressurization pipeline are closed.
10. The method of claim 8, wherein in step S2, the reactor to be tested is heated by the heating device, and when the set temperature of the reactor is reached, the pressure indicated by the pressure gauge of the inlet pipeline of the reactor to be tested is observed to see whether the pressure reaches the pressure required by the test.
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|---|---|---|---|---|
| CN114264608A (en) * | 2021-12-31 | 2022-04-01 | 河北地质大学 | Device and method for simulating pyrite growth mechanism |
| CN114264608B (en) * | 2021-12-31 | 2023-10-24 | 河北地质大学 | Device and method for simulating pyrite growth mechanism |
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| CN113373519B (en) | 2023-09-01 |
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