CN113373504A - Section taking temperature stabilizing process - Google Patents
Section taking temperature stabilizing process Download PDFInfo
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- CN113373504A CN113373504A CN202010117511.7A CN202010117511A CN113373504A CN 113373504 A CN113373504 A CN 113373504A CN 202010117511 A CN202010117511 A CN 202010117511A CN 113373504 A CN113373504 A CN 113373504A
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- crucible
- single crystal
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- temperature
- rotating speed
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a segment taking and temperature stabilizing process, which is used for stabilizing temperature after segment taking in the process of pulling a single crystal, and comprises the following steps: descending the crucible; reducing the rotation speed of the single crystal and the rotation speed of the crucible; the temperature rise power is set to raise the temperature. The invention has the advantages of automatically controlling and adjusting the position of the crucible, the rotating speed of the single crystal and the heating power, shortening the time of temperature stabilization again, reducing the labor intensity, improving the production efficiency, having high automation degree and ensuring the unification of the process standard in the crystal pulling process.
Description
Technical Field
The invention belongs to the technical field of silicon single crystal preparation, and particularly relates to a segment-taking temperature-stabilizing process.
Background
In the prior art, manual operation is needed when section taking and temperature stabilization are carried out, if the skill of an operator is unskilled and crystal falling rotation is not carried out in time, a single crystal furnace can lift single crystals by large crystal rotation when bracts are broken, and the risk of falling of the single crystals by a stranded steel cable is increased in the section taking process; if the operator does not descend the crucible in time, silicon spraying may occur, which causes abnormal production; if the operator does not give the heating power in time, the temperature is low, the next temperature stabilization cannot be met, and the condition of working hour waste is caused.
Disclosure of Invention
In view of the above problems, the present invention provides a segment-taking temperature stabilization process, which is applied to a temperature stabilization process after segment taking in a czochralski single crystal pulling process, and is capable of automatically adjusting the position of a crucible, the rotation speed of the crucible, the rotation speed of a single crystal and the heating power to heat a silicon solution in the crucible for temperature stabilization, wherein the automation degree is high, the labor intensity is reduced, and the time for secondary temperature stabilization is shortened.
In order to solve the technical problems, the invention adopts the technical scheme that: a section-taking temperature stabilizing process is used for stabilizing temperature after section taking in the process of pulling a single crystal, and comprises the following steps:
descending the crucible;
reducing the rotation speed of the single crystal and the rotation speed of the crucible;
the temperature rise power is set to raise the temperature.
Further, in the step of descending the crucible, the descending distance of the crucible is 30-50 mm.
Further, in the step of reducing the rotating speed of the single crystal and the rotating speed of the crucible, the rotating speed of the single crystal is 2-5rap/min
Further, in the step of the rotating speed of the crucible, the rotating speed of the crucible is 3-8 rap/min.
Furthermore, in the step of setting the heating power, the power of the main heater and the power of the bottom heater are respectively increased on the basis of the seeding power.
Further, the power increase of the main heater power is 10-20 kw.
Further, the power increase of the bottom heater power is 5-20 kw.
Further, the raising of the single crystal is performed before the lowering of the crucible step.
By adopting the technical scheme, the crucible is automatically controlled and adjusted in position, the rotating speed of the crucible, the rotating speed of the single crystal and the heating power, the crucible is lowered, abnormal silicon spraying caused by too close distance of liquid ports is avoided, crystal rotation and crucible rotation are automatically reduced, the risks of twisting steel cables and dropping the single crystal are reduced, the heating power is automatically prefabricated, the temperature is timely raised, the secondary temperature stabilizing working time is shortened, the labor intensity is reduced, the production efficiency is improved, the automation degree is high, and the unification of the process standard in the crystal pulling process is ensured.
Drawings
FIG. 1 is a process flow diagram of an embodiment of the present invention.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
Fig. 1 shows a process flow diagram of an embodiment of the invention, which relates to a section-taking temperature stabilization process, and is applied to a temperature stabilization process after a section is taken for a czochralski single crystal.
A section-taking temperature stabilizing process is used for stabilizing temperature after section taking in the process of pulling a single crystal, and comprises the following steps:
the crucible is lowered, and the position of the crucible is lowered on the basis of the position of the crucible during section taking, so that the phenomenon of abnormal silicon spraying caused by too close distance of liquid ports in the process of raising the temperature of the silicon solution in the crucible is avoided;
reducing the rotating speed of the single crystal and the rotating speed of the crucible, and reducing the rotating speed of the single crystal and the rotating speed of the crucible on the basis of the rotating speed of the crucible and the rotating speed of the single crystal during section taking, so that the temperature of the silicon solution in the crucible is conveniently increased;
setting heating power, heating, increasing heater power on the basis of seeding power, and heating the silicon solution in the crucible to be convenient for temperature stabilization.
Wherein, in the step of descending the crucible, the descending distance of the crucible is 30-50mm, and the crucible is selected according to the actual requirement, and the specific requirement is not made here.
In the step of reducing the rotating speed of the single crystal and the rotating speed of the crucible, the rotating speed of the single crystal is 2-5rap/min, the rotating speed of the crucible is 3-8rap/min, and the steps are selected according to actual requirements without specific requirements.
In the step of setting the heating power, the power of a main heater and the power of a bottom heater are respectively increased on the basis of the seeding power, the power increase value of the power of the main heater is 10-20kw, the power increase value of the power of the bottom heater is 5-20kw, and the power increase value is selected according to actual requirements without specific requirements.
Before the step of lowering the crucible, the single crystal is lifted, and the crucible is lifted into a sub-chamber of the single crystal furnace.
Implement method
In the process of pulling the single crystal, if the single crystal is broken in bract or pulled off in crystal pulling, and the re-feeding is not carried out after the section taking, the temperature needs to be continuously stabilized, in the process of stabilizing the temperature, the single crystal is lifted into a secondary chamber of a single crystal furnace, the position of a crucible is adjusted, the crucible is lowered, the lowering distance of the crucible is 30mm, the rotating speed of the crucible and the rotating speed of the single crystal are adjusted at the same time, the rotating speed of the crucible and the rotating speed of the single crystal are reduced, the temperature of the silicon solution in the crucible is conveniently increased, the rotating speed of the crucible is reduced to 2rap/min, and the rotating speed of the single crystal is reduced to 3 rap/min; heating the heater on the basis of seeding power, setting the heating power, increasing the power of the main heater to 10kw, increasing the power of the bottom heater to 5kw, increasing the power of the main heater to 10kw on the basis of the seeding power, increasing the power of the bottom heater to 5kw on the basis of the seeding power, heating the silicon solution in the crucible, and stabilizing the temperature to facilitate subsequent seeding.
Example two
In the process of pulling the single crystal, if the single crystal is broken in bract or pulled off in crystal pulling, and the re-feeding is not carried out after the section taking, the temperature needs to be continuously stabilized, in the process of stabilizing the temperature, the single crystal is lifted into a secondary chamber of a single crystal furnace, the position of a crucible is adjusted, the crucible is lowered, the lowering distance of the crucible is 50mm, the rotating speed of the crucible and the rotating speed of the single crystal are adjusted at the same time, the rotating speed of the crucible and the rotating speed of the single crystal are reduced, the temperature of the silicon solution in the crucible is conveniently increased, the rotating speed of the crucible is reduced to 5rap/min, and the rotating speed of the single crystal is reduced to 8 rap/min; heating the heater on the basis of seeding power, setting the heating power, increasing the power of the main heater to 20kw, increasing the power of the bottom heater to 20kw on the basis of the seeding power, increasing the power of the main heater to 20kw on the basis of the seeding power, increasing the power of the bottom heater to 20kw on the basis of the seeding power, heating the silicon solution in the crucible, and stabilizing the temperature for facilitating subsequent seeding.
EXAMPLE III
In the process of pulling the single crystal, if the single crystal is broken in bract or pulled off in crystal pulling, and the re-feeding is not carried out after the section taking, the temperature needs to be continuously stabilized, in the process of stabilizing the temperature, the single crystal is lifted into a secondary chamber of a single crystal furnace, the position of a crucible is adjusted, the crucible is lowered, the lowering distance of the crucible is 40mm, the rotating speed of the crucible and the rotating speed of the single crystal are adjusted at the same time, the rotating speed of the crucible and the rotating speed of the single crystal are reduced, the temperature of the silicon solution in the crucible is conveniently increased, the rotating speed of the crucible is reduced to 4rap/min, and the rotating speed of the single crystal is reduced to 6 rap/min; heating the heater on the basis of seeding power, setting the heating power, increasing the power of the main heater to 15kw, increasing the power of the bottom heater to 15kw on the basis of the seeding power, increasing the power of the main heater to 15kw on the basis of the seeding power, increasing the power of the bottom heater to 15kw on the basis of the seeding power, heating the silicon solution in the crucible, and stabilizing the temperature to facilitate subsequent seeding.
By adopting the technical scheme, the crucible is automatically controlled and adjusted in position, the rotating speed of the crucible, the rotating speed of the single crystal and the heating power, the crucible is lowered, abnormal silicon spraying caused by too close distance of liquid ports is avoided, crystal rotation and crucible rotation are automatically reduced, the risks of twisting steel cables and dropping the single crystal are reduced, the heating power is automatically prefabricated, the temperature is timely raised, the secondary temperature stabilizing working time is shortened, the labor intensity is reduced, the production efficiency is improved, the automation degree is high, and the unification of the process standard in the crystal pulling process is ensured.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (8)
1. A section-taking temperature-stabilizing process is characterized in that: after the section is taken out in the process of pulling the single crystal, the temperature is stabilized, and the method comprises the following steps:
descending the crucible;
reducing the rotation speed of the single crystal and the rotation speed of the crucible;
the temperature rise power is set to raise the temperature.
2. The section-taking temperature-stabilizing process according to claim 1, characterized in that: in the step of descending the crucible, the descending distance of the crucible is 30-50 mm.
3. The section-taking temperature-stabilizing process according to claim 1 or 2, characterized in that: in the step of reducing the rotating speed of the single crystal and the rotating speed of the crucible, the rotating speed of the single crystal is 2-5 rap/min.
4. The section-taking temperature-stabilizing process according to claim 3, characterized in that: in the step of reducing the rotating speed of the single crystal and the rotating speed of the crucible, the rotating speed of the crucible is 3-8 rap/min.
5. The section-taking temperature stabilization process according to claim 1, 2 or 4, characterized in that: in the step of setting the heating power, the power of the main heater and the power of the bottom heater are respectively increased on the basis of the seeding power.
6. The section-taking temperature-stabilizing process according to claim 5, characterized in that: the power increase of the main heater power is 10-20 kw.
7. The section-taking temperature-stabilizing process according to claim 6, characterized in that: the power increase of the bottom heater power is 5-20 kw.
8. The section-taking temperature-stabilizing process according to claim 1, characterized in that: lifting of the single crystal is performed prior to the step of lowering the crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010117511.7A CN113373504A (en) | 2020-02-25 | 2020-02-25 | Section taking temperature stabilizing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010117511.7A CN113373504A (en) | 2020-02-25 | 2020-02-25 | Section taking temperature stabilizing process |
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| CN113373504A true CN113373504A (en) | 2021-09-10 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201864792U (en) * | 2010-12-10 | 2011-06-15 | 镇江荣德新能源科技有限公司 | Guide cylinder for czochralski method monocrystalline silicon growing device and monocrystalline silicon growing device |
| CN110184647A (en) * | 2019-06-24 | 2019-08-30 | 内蒙古中环协鑫光伏材料有限公司 | A kind of automatic steady temperature technique |
| CN110396715A (en) * | 2019-09-04 | 2019-11-01 | 内蒙古中环光伏材料有限公司 | A kind of pulling of crystals repeatedly throws technique again |
| CN110396716A (en) * | 2019-09-04 | 2019-11-01 | 内蒙古中环光伏材料有限公司 | A kind of seeding draws automatic steady temperature technique of having no progeny |
| CN110438561A (en) * | 2019-09-04 | 2019-11-12 | 内蒙古中环光伏材料有限公司 | A kind of control temperature of thermal field technique |
-
2020
- 2020-02-25 CN CN202010117511.7A patent/CN113373504A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201864792U (en) * | 2010-12-10 | 2011-06-15 | 镇江荣德新能源科技有限公司 | Guide cylinder for czochralski method monocrystalline silicon growing device and monocrystalline silicon growing device |
| CN110184647A (en) * | 2019-06-24 | 2019-08-30 | 内蒙古中环协鑫光伏材料有限公司 | A kind of automatic steady temperature technique |
| CN110396715A (en) * | 2019-09-04 | 2019-11-01 | 内蒙古中环光伏材料有限公司 | A kind of pulling of crystals repeatedly throws technique again |
| CN110396716A (en) * | 2019-09-04 | 2019-11-01 | 内蒙古中环光伏材料有限公司 | A kind of seeding draws automatic steady temperature technique of having no progeny |
| CN110438561A (en) * | 2019-09-04 | 2019-11-12 | 内蒙古中环光伏材料有限公司 | A kind of control temperature of thermal field technique |
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