CN113363280A - Display device - Google Patents
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- CN113363280A CN113363280A CN202010135140.5A CN202010135140A CN113363280A CN 113363280 A CN113363280 A CN 113363280A CN 202010135140 A CN202010135140 A CN 202010135140A CN 113363280 A CN113363280 A CN 113363280A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
Abstract
The invention discloses a display device, comprising: a substrate base plate having a bearing function; the quantum dot light-emitting diode device is positioned on the substrate base plate; and the dielectric layer is positioned on the surface of one side, away from the substrate base plate, of the quantum dot light-emitting diode device and is used for enhancing the transmittance of emergent rays of the quantum dot light-emitting diode device towards the side, away from the substrate base plate. The QLED device provided by the invention is of a top emission structure, in order to improve the light emitting efficiency of the top emission device, the light emitting side of the QLED device is provided with the dielectric layer, the dielectric layer is made of transparent materials, and the refractive index and the thickness of the dielectric layer meet the condition of enhancing the transmission of the emergent light of the QLED device, so that the transmission rate of the light emitting side of the QLED device can be improved, and the light emitting efficiency of the QLED device is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display device.
Background
The quantum dot luminescent material has the characteristics of adjustable luminescent spectrum, high luminescent color purity, good photochemical stability and thermal stability and the like, and is widely applied to the field of novel display at present. Quantum Dot Light Emitting Diodes (QLEDs) using Quantum Dot materials as Light Emitting materials have the characteristics of wider color gamut, higher color rendering index, better solution processability and the like compared with Organic Light Emitting Diodes (OLEDs), and thus have a very great application prospect in the display field.
Currently, the external quantum efficiency of QLEDs is already approaching the best performing OLED today. However, the QLED display device usually mainly has a bottom emission structure, which means that light needs to be emitted out through a driving circuit on a substrate, and if a more complicated active driving matrix is adopted, the aperture ratio is inevitably reduced, and to achieve the same display brightness, an operating voltage needs to be increased to improve the brightness, which is disadvantageous to the lifetime of the device.
Disclosure of Invention
The invention provides a display device which has a top emission structure and high light emitting efficiency.
The present invention provides a display device including:
a substrate base plate having a bearing function;
the quantum dot light-emitting diode device is positioned on the substrate base plate;
and the dielectric layer is positioned on the surface of one side, away from the substrate base plate, of the quantum dot light-emitting diode device and is used for enhancing the transmittance of the quantum dot light-emitting diode device to emergent rays of one side, away from the substrate base plate.
In some embodiments of the present application, in the above display device provided by the present invention, the dielectric layer includes: at least one first organic dielectric layer and at least one first inorganic dielectric layer; the first organic dielectric layers and the first inorganic dielectric layers are alternately arranged.
In some embodiments of the present invention, the dielectric layer includes two layers of the first organic dielectric layer and one layer of the first inorganic dielectric layer;
the first inorganic dielectric layer is positioned between the two first organic dielectric layers.
In some embodiments of the present application, in the above display device provided by the present invention, the material of the first organic dielectric layer is N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine;
the first inorganic dielectric layer is made of molybdenum trioxide.
In some embodiments of the present invention, in the above display device, the thickness of the first organic dielectric layer is 10nm, and the thickness of the first inorganic dielectric layer is 10 nm.
In some embodiments of the present application, in the above display device provided by the present invention, the qd-led device includes:
the bottom electrode is positioned on the substrate base plate;
the electron transmission layer is positioned on one side of the bottom electrode, which is far away from the substrate base plate;
the quantum dot layer is positioned on one side, away from the bottom electrode, of the electron transport layer;
the hole transport layer is positioned on one side, away from the electron transport layer, of the quantum dot layer;
the hole injection layer is positioned on one side of the hole transmission layer, which is far away from the quantum dot layer;
and the top electrode is positioned on one side of the hole injection layer, which is far away from the hole transport layer.
In some embodiments of the present invention, there is provided the above display device, wherein the hole injection layer includes: a second organic dielectric layer and a second inorganic dielectric layer;
the second organic dielectric layer is close to one side of the top electrode, or the second inorganic dielectric layer is close to one side of the top electrode.
In some embodiments of the present application, in the above display device provided by the present invention, the material of the second organic dielectric layer is 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazatriphenylene;
the second inorganic dielectric layer is made of molybdenum trioxide.
In some embodiments of the present application, in the foregoing display device provided by the present invention, the qd-led device further includes:
the first interface layer is positioned between the bottom electrode and the substrate base plate and used for enhancing the adhesive force of the bottom electrode;
and the second interface layer is positioned between the bottom electrode and the electron transmission layer and is used for modifying the bottom electrode.
In some embodiments of the present invention, in the above display device provided by the invention, the material of the first interface layer and the second interface layer is aluminum-doped zinc oxide or indium-doped zinc oxide.
The invention has the following beneficial effects:
the present invention provides a display device including: a substrate base plate having a bearing function; the quantum dot light-emitting diode device is positioned on the substrate base plate; and the dielectric layer is positioned on the surface of one side, away from the substrate base plate, of the quantum dot light-emitting diode device and is used for enhancing the transmittance of emergent rays of the quantum dot light-emitting diode device towards the side, away from the substrate base plate. The QLED device provided by the invention is of a top emission structure, in order to improve the light emitting efficiency of the top emission device, the light emitting side of the QLED device is provided with the dielectric layer, the dielectric layer is made of transparent materials, and the refractive index and the thickness of the dielectric layer meet the condition of enhancing the transmission of the emergent light of the QLED device, so that the transmission rate of the light emitting side of the QLED device can be improved, and the light emitting efficiency of the QLED device is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view of a display device according to an embodiment of the invention;
fig. 2 is a second schematic cross-sectional view of a display device according to an embodiment of the invention;
FIG. 3 is one of the transmittance graphs of the QLED device at different wavelength bands;
FIG. 4 is a second graph of transmittance of a QLED device in different wavelength bands;
fig. 5 is one of schematic cross-sectional structural diagrams of a QLED device according to an embodiment of the present invention;
fig. 6 is a second schematic cross-sectional structure diagram of a QLED device according to an embodiment of the present invention;
fig. 7 is a third schematic cross-sectional structure diagram of a QLED device according to an embodiment of the present invention;
fig. 8 is a fourth schematic cross-sectional view of a QLED device according to an embodiment of the present invention;
fig. 9 is a flowchart of a method for manufacturing a display device according to an embodiment of the invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, the present invention is further described with reference to the accompanying drawings and examples. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their repetitive description will be omitted. The words expressing the position and direction described in the present invention are illustrated in the accompanying drawings, but may be changed as required and still be within the scope of the present invention. The drawings of the present invention are for illustrative purposes only and do not represent true scale.
The QLED has the excellent characteristics of wide color gamut, high color rendering index and the like, and has great development potential in the display field. In a conventional QLED display device, a QLED device usually employs a bottom emission structure, but in the manufacturing process, opaque components such as a driving circuit are formed on a substrate, so that the aperture ratio of the bottom emission QLED display device is inevitably reduced, and to achieve the same display brightness, an operating voltage needs to be increased to improve the brightness, which is disadvantageous to the lifetime of the device.
In view of this, embodiments of the present invention provide a display apparatus, which employs a top-emitting QLED device, thereby avoiding the above problems and improving the light extraction efficiency of the QLED device.
Fig. 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention, and as shown in fig. 1, the display device according to the embodiment of the present invention includes:
the substrate 11 has a load bearing function.
The display device generally comprises a substrate 11, and the substrate 11 made of suitable material can be made into a rigid display device or a flexible display device. When the substrate base plate is made of hard materials such as glass, the hard display device can be manufactured; when a flexible material such as Polyimide (PI) is used, a flexible display device can be manufactured.
After selecting a suitable substrate 11, a driving circuit may be formed on the substrate 11, and the driving circuit may be connected to the electrodes of the QLED device to drive the QLED device for image display. In specific implementation, the QLED device can be driven by passive driving or active driving.
The quantum dot light emitting diode device 12 is located on the substrate base plate 11.
The QLED device 12 is formed over the substrate base plate 11, and the QLED device 12 may generally include: the quantum dot layer is arranged between the two electrodes, the light emitting layer of the QLED device is the quantum dot layer, composite excitons can be formed in the quantum dot layer by applying voltage to the two electrodes of the QLED, and the quantum dot material is excited by the composite excitons to emit light. Compared with the traditional organic luminescent material, the quantum dot material has the advantages of wide color gamut, self luminescence, low starting voltage, high response speed, long service life and the like, and has higher external quantum efficiency.
And the dielectric layer 13 is positioned on the surface of the side, away from the substrate base plate 11, of the quantum dot light emitting diode device 12, and is used for enhancing the transmittance of the outgoing light rays of the quantum dot light emitting diode device 12, away from the substrate base plate 11.
The structure of the QLED device 12 provided by the embodiment of the present invention is a top emission structure, in order to improve the light extraction efficiency of the top emission device, the light extraction side of the QLED device 12 is provided with the dielectric layer 13, the dielectric layer 13 is made of a transparent material, and the refractive index and the thickness of the dielectric layer 13 satisfy the condition of enhancing the transmission of the emitted light of the QLED device 12, so that the transmittance of the light extraction side of the QLED device 12 can be improved, and the light extraction efficiency of the QLED device 12 can be improved.
Fig. 2 is a second schematic cross-sectional structure diagram of a display device according to an embodiment of the present invention, as shown in fig. 2, in practical implementation, the dielectric layer 13 includes: at least one first organic dielectric layer 131 and at least one first inorganic dielectric layer 132; the first organic dielectric layers 131 and the first inorganic dielectric layers 132 are alternately disposed.
The embodiment of the invention adopts the dielectric layer with the laminated structure of the organic/inorganic dielectric layers, and can improve the light transmittance of the QLED device 12 by utilizing the principle of thin film interference. The first inorganic dielectric layer 132 is made of an inorganic material, has good compactness, and has a certain water and oxygen blocking effect when formed on the QLED device 12; the first organic dielectric layer 131 is made of an organic material and can serve as a water absorber to absorb water vapor entering the device, so that the water vapor is prevented from entering the device to damage the quantum dot material or the organic material. Therefore, the light extraction efficiency of the QLED device 12 can be improved, and the service life of the QLED device 12 can also be prolonged.
In practical applications, the number of the first organic dielectric layer 131 is at least one, and the number of the first inorganic dielectric layer 132 is at least one. The number of the first organic dielectric layer 131 and the first inorganic dielectric layer 132 and the thickness of each dielectric layer are determined by the wavelength of the light emitted from the QLED device 12, and are not particularly limited.
In practical applications, as the period of the organic/inorganic dielectric layer increases, the transmittance of the QLED device 12 also increases. However, the number of dielectric layers is increased to affect the thickness and conductivity of the device. Considering all aspects, in the embodiment of the present invention, as shown in fig. 2, the dielectric layer 13 may have a three-layer structure, which includes two first organic dielectric layers 131 and one first inorganic dielectric layer 132; a first inorganic dielectric layer 132 is located between two first organic dielectric layers 131.
The use of two first organic dielectric layers 131 increases the barrier to water and oxygen path of the QLED device 12, thereby first absorbing water and oxygen that enter the device. The first inorganic dielectric layer 132 has the function of blocking water and oxygen, so that the reliability of the device can be improved. In addition, after a plurality of experimental tests, it is found that the device structure using two first organic dielectric layers 131 and one inorganic dielectric layer 132 has a high light transmittance, and does not affect various parameters of the device.
In a specific implementation, the material of the first organic dielectric layer 131 is N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPB); the material of the first inorganic dielectric layer 132 is molybdenum trioxide (MoO)3)。
For general purposes, the materials used for the first organic dielectric layer 131 and the first inorganic dielectric layer 132 are commonly used in QLED devices, and therefore NPB and MoO are selected when used3When used as a dielectric layer material, unnecessary cost increase in production can be avoided. In addition, the two materials can be formed on the top electrode in an evaporation mode, the same manufacturing process is adopted as the top electrode, and the manufacturing complexity is reduced.
In the embodiment of the invention, the thickness of the first organic dielectric layer 131 may be 10nm, and the thickness of the first inorganic dielectric layer 132 may be 10 nm. The embodiment of the invention takes the dielectric layer with the thickness of 10nm as a unit, and is beneficial to simplifying the control of manufacturing equipment. The first organic dielectric layers 131 and the first inorganic dielectric layers 132 are formed on the light-emitting side of the QLED device 12 in an alternating sequence, and the purpose of adjusting the light transmittance can be achieved by controlling the number of the first organic dielectric layers 131 and the first inorganic dielectric layers 132.
In the embodiment of the present invention, NPB is used for the first organic dielectric layer 131, and MoO is used for the first inorganic dielectric layer 1323The experimental results can be seen in fig. 3 and 4. Fig. 3 and 4 are graphs of transmittance of the QLED device 12 in different wavelength bands.
As shown in fig. 3, the experiment was compared using a 5-group structure, where N indicates that dielectric layer 13 contains only one NPB layer;N/M indicates that the dielectric layer 13 contains one layer of NPB and one layer of MoO3(ii) a N/M/N/M indicates that the dielectric layer 13 contains one layer of NPB and one layer of MoO3Another layer of NPB and another layer of MoO3The laminated structure of (1); non represents the dielectric layer 13; N/M/N indicates that the dielectric layer 13 contains one layer of NPB and one layer of MoO3And a further layer of NPB. According to the experimental detection structure, after the dielectric layer is arranged on the light-emitting side of the QLED, the transmittance of the device is improved by 6 times compared with that of the structure without the dielectric layer non; among several structures of the dielectric layer, the N/M/N structure has the best transmittance. Therefore, the dielectric layer 13 in the embodiment of the present invention may adopt a stacked structure of two first organic dielectric layers 131 and one first inorganic dielectric layer 132, and may have a high transmittance when applied to a top emission type display device.
As shown in fig. 4, the experiment also compares the transmittance of the dielectric layer in a single-layer structure and a stacked-layer structure, wherein the irradiation indicates that the dielectric layer 13 is a stacked-layer structure including a first organic dielectric layer and a first inorganic dielectric layer; only MoO3Indicating that dielectric layer 13 comprises only one MoO layer3(ii) a only NPB means that the dielectric layer 13 comprises only one layer NPB. According to the experimental detection structure, when the dielectric layer 13 adopts a laminated structure of the first organic dielectric layer and the first inorganic dielectric layer, the transmittance is improved compared with a structure adopting only an organic dielectric layer or only an inorganic dielectric layer. Therefore, in the embodiment of the present invention, the dielectric layer 13 may adopt a stacked-layer structure of the first organic dielectric layer 131 and the first inorganic dielectric layer 132.
Fig. 5 is a schematic cross-sectional view of a QLED device according to an embodiment of the present invention, and as shown in fig. 5, the quantum dot light emitting diode device 12 includes:
and a bottom electrode 121 on the substrate 11.
In the embodiment of the present invention, the display device is a top emission QLED display device, and the bottom electrode 121 may serve as a cathode. The bottom electrode 121 of the top emission device is required to have a high reflectivity, in a specific implementation, the material of the bottom electrode 121 may be silver (Ag), and the bottom electrode 121 may be formed on the substrate 11 by magnetron sputtering or evaporation, and the thickness of the bottom electrode 121 may be adjusted according to the conductivity of the device, which is not limited herein.
And an electron transport layer 122 located on a side of the bottom electrode 121 facing away from the substrate 11.
The electron transport layer 122 is used for injecting and transporting electrons, and the material of the electron transport layer 122 is mostly an N-type semiconductor with a wide bandgap, so that a strong carrier transport capability and a high carrier concentration can be ensured. In specific implementation, the electron transport layer 122 may be made of zinc oxide (ZnO) nanoparticles, and may be formed on the bottom electrode 121 by a solution method.
And a quantum dot layer 123 on a side of the electron transport layer 122 facing away from the bottom electrode 121.
The quantum dot layer 123 serves as a light-emitting layer and contains a quantum dot material. Generally, quantum dot materials can be dispersed in organic solvents and prepared by a solution method. The quantum dot material may include: cadmium selenide (CdSe), cadmium sulfide (CdS), lead selenide (PbSe), lead sulfide (PbS), zinc selenide (ZnSe), lead sulfide (ZnS), indium phosphide (InP), copper indium sulfide (CuInS)2) And the like. The quantum dot material is an inorganic material, and has better optical characteristics and better stability compared with an organic luminescent material. Generally, the particle size of the quantum dot material is adjusted to enable the quantum dot material to be stimulated to emit light in different wave bands. The quantum dot material can emit light in a 380nm-780nm waveband, the smaller the particle size of the quantum dot material is, the smaller the wavelength of the light subjected to stimulated emission is, and the larger the particle size of the quantum dot material is, the larger the wavelength of the light subjected to stimulated emission is. In specific implementation, the particle size of the quantum dot material may be set according to a wavelength required to be emitted by the QLED device, which is not limited herein.
And a hole transport layer 124 on a side of the quantum dot layer 123 facing away from the electron transport layer 122.
The hole transport layer 124 can improve the hole transport capability of the QLED device, which is beneficial for the transport of carriers to the quantum dot layer 123. The material of the hole transport layer 124 can be polymer and prepared by a solution method; alternatively, the hole transport layer 124 may be made of a small molecule material by evaporation. The polymeric material may include: polyvinylcarbazole (PVK), bis (4-phenyl) (4-butylphenyl) amine (TPD), poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), and the like; small molecule materials may include: 4,4 '-N, N' -dicarbazolebiphenyl (CPB), N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPB), N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPD), and the like. Since the quantum dot layer 123 in the embodiment of the present invention is manufactured by using the solution method, the hole transport layer 124 can be manufactured by using a small molecule material and using an evaporation method, so that the quantum dot layer 123 can be prevented from being damaged by the solution when the hole transport layer is manufactured, and the small molecule material is also beneficial to improving the conductivity of the device.
And a hole injection layer 125 on the side of the hole transport layer 124 facing away from the quantum dot layer 123.
The hole injection layer 125 can improve the hole injection capability of the QLED device, which is beneficial to improving the injection of carriers. The hole injection layer 125 may be made of a metal oxide by thermal evaporation or magnetron sputtering. The material of the metal oxide may include: molybdenum trioxide (MoO)3) Nickel oxide (NiO), tungsten oxide (WO)3) Vanadium pentoxide (V)2O5) And the like.
And a top electrode 126 on a side of the hole injection 125 facing away from the hole transport layer 124.
The top electrode 126 of the top emission type QLED display device is required to have good electrical conductivity, good ductility, and high optical transmittance. In the embodiment of the present invention, the top electrode 126 may serve as an anode, and may be made of metal silver (Ag), and the dielectric layer 13 is disposed on a side of the top electrode 126 away from the hole injection layer 125, so as to improve the light-emitting efficiency of the QLED device. In an embodiment of the present invention, Ag in the top electrode 126 may be set to about 15nm, and the dielectric layer 13 may employ two NPBs and one MoO3The laminated structure of (1).
Fig. 6 and 7 are schematic cross-sectional structural diagrams of a QLED device according to an embodiment of the present invention, and as shown in fig. 6 and 7, the hole injection layer 125 according to an embodiment of the present invention includes: a second organic dielectric layer 1251 and a second inorganic dielectric layer 1252; as shown in fig. 6, a second organic dielectric layer 1251 may be disposed on a side near the top electrode 126, or, as shown in fig. 7, a second inorganic dielectric layer 1252 may be disposed on a side near the top electrode 126.
In the embodiment of the invention, the hole injection layer 125 is provided with two dielectric layers, so that the hole injection layer 125 can also have the effect of increasing the transmittance as the dielectric layer 13, and thus the light extraction efficiency of the QLED device can be further improved. The hole injection layer 125 has a composite stacked structure of the second organic dielectric layer 1251 and the second inorganic dielectric layer 1252, which is advantageous for improving the hole injection capability.
In a specific implementation, the refractive indexes and thicknesses of the second organic dielectric layer 1251 and the second inorganic dielectric layer 1252 need to satisfy a requirement of thin film interference anti-reflection, and the anti-reflection principle is the same as that of the dielectric layer 13, which is not described herein again.
In practical applications, the material of the second organic dielectric layer 1251 may be 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazatriphenylene (HAT-CN); molybdenum trioxide (MoO) may be used as the material of the second inorganic dielectric layer 12523)。
For general purposes, the materials used for the second organic dielectric layer 1251 and the second inorganic dielectric layer 1252 are commonly used in QLED devices, and thus HAT-CN and MoO are selected when used3As a material of the hole injection layer 125, an unnecessary cost increase in production can be avoided. The thickness of HAT-CN can be set within the range of 5nm-10nm, and a layer of MoO is added3The conductivity of the hole injection layer can be effectively improved. In practical application, HAT-CN and MoO can be formed on the hole transport layer 1243Or MoO can be made first3And HAT-CN is manufactured, so that the effects of increasing the transmittance and improving the hole injection capability can be achieved.
Fig. 8 is a fourth schematic cross-sectional structure diagram of a QLED device according to an embodiment of the present invention, and as shown in fig. 8, the QLED device according to the embodiment of the present invention further includes:
the first interface layer 127 is located between the bottom electrode 121 and the substrate 11.
Since the adhesion between the bottom electrode 121 and the substrate 11 is not good, in practical applications, a first interface layer 127 may be formed on the substrate 11, and then the bottom electrode 121 may be formed on the first interface layer 127, thereby improving the adhesion of the bottom electrode 121.
And a second interface layer 128 between the bottom electrode 121 and the electron transport layer 122.
The bottom electrode 121 is usually made of metallic silver, and the energy level matching between the metallic silver and the functional layer is not good when the metallic silver is used as a cathode, so a second interface layer 128 can be arranged between the bottom electrode 121 and the electron transport layer 122, and can be used for modifying the bottom electrode to make the energy levels more matched.
In practical applications, the first interface layer 127 and the second interface layer 128 may be made of aluminum-doped zinc oxide (AZO) or indium-doped zinc oxide (IZO). AZO/IZO is transparent conductive material, when used for modifying bottom electrode, the work function is more matched, and the effect is better.
In another aspect of the embodiments of the present invention, a method for manufacturing any one of the above display devices is also provided. Fig. 9 is a flowchart of a manufacturing method of a display device according to an embodiment of the present invention, and as shown in fig. 9, the manufacturing method of the display device according to the embodiment of the present invention may include:
s10, providing a substrate base plate;
s20, forming a quantum dot light-emitting diode device on the substrate base plate;
and S30, forming a dielectric layer on the surface of the side, facing away from the substrate base plate, of the quantum dot light-emitting diode device.
The QLED display device provided by the embodiment of the invention is a top-emission display device, in order to improve the light-emitting efficiency of a top-emission device, the dielectric layer is formed on the light-emitting side of the QLED device, the dielectric layer is made of transparent materials, and the refractive index and the thickness of the dielectric layer meet the condition of enhancing the transmission of emergent light of the QLED device, so that the transmission rate of the light-emitting side of the QLED device can be improved, and the light-emitting efficiency of the QLED device is improved.
Specifically, before forming the QLED device on the substrate base plate, the substrate base plate needs to be cleaned and baked.
And then preparing a QLED device on the substrate, wherein the QLED device comprises: a bottom electrode, an electron transport layer, a quantum dot layer, a hole transport layer, a hole injection layer, and a top electrode. In the embodiment of the invention, the bottom electrode can be grown in a magnetron sputtering mode; the electron transport layer and the quantum dot layer can be prepared by a solution method; the hole transport layer and the hole injection layer can be prepared by adopting an evaporation method; and finally, forming the top electrode and the dielectric layer positioned on the light emergent side of the top electrode by adopting an evaporation method.
In order to further improve the light extraction efficiency of the QLED device and improve the carrier injection capability, the hole injection layer in the embodiment of the present invention may adopt a composite stacked structure, for example, HAT-CN and MoO may be adopted3The composite structure adopts an organic/inorganic laminated structure, so that the transmittance of emergent rays can be improved, and the conductivity and the hole injection capability of the hole injection layer can be improved.
In order to improve the adhesion between the bottom electrode and the substrate, a first interface layer may be formed on the substrate before the bottom electrode is formed, and then the bottom electrode is formed. In order to make the energy levels between the bottom electrode and the electron transport layer more matched, a second interface layer may be formed after the bottom electrode is formed, and then the electron transport layer may be formed.
The thickness of each functional film layer in the QLED device needs to be reasonably set in consideration of a plurality of parameters of the device, such as conductivity, carrier transmission capability, starting voltage and the like, and the thickness of each functional film layer is different when different materials are adopted and QLED devices with different structures are prepared.
The display device provided by the embodiment of the invention comprises: a substrate base plate having a bearing function; the quantum dot light-emitting diode device is positioned on the substrate base plate; and the dielectric layer is positioned on the surface of one side, away from the substrate base plate, of the quantum dot light-emitting diode device and is used for enhancing the transmittance of emergent rays of the quantum dot light-emitting diode device towards the side, away from the substrate base plate. The QLED device provided by the embodiment of the invention is of a top emission structure, in order to improve the light emitting efficiency of the top emission device, the light emitting side of the QLED device is provided with the dielectric layer, the dielectric layer is made of transparent materials, and the refractive index and the thickness of the dielectric layer meet the condition of enhancing the emergent light transmission of the QLED device, so that the transmittance of the light emitting side of the QLED device can be improved, and the light emitting efficiency of the QLED device is improved.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A display device, comprising:
a substrate base plate having a bearing function;
the quantum dot light-emitting diode device is positioned on the substrate base plate;
and the dielectric layer is positioned on the surface of one side, away from the substrate base plate, of the quantum dot light-emitting diode device and is used for enhancing the transmittance of the quantum dot light-emitting diode device to emergent rays of one side, away from the substrate base plate.
2. The display device of claim 1, wherein the dielectric layer comprises: at least one first organic dielectric layer and at least one first inorganic dielectric layer; the first organic dielectric layers and the first inorganic dielectric layers are alternately arranged.
3. The display device of claim 2, wherein the dielectric layer comprises two of the first organic dielectric layer and one of the first inorganic dielectric layer;
the first inorganic dielectric layer is positioned between the two first organic dielectric layers.
4. The display device according to claim 2, wherein a material of the first organic dielectric layer is N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine;
the first inorganic dielectric layer is made of molybdenum trioxide.
5. The display device of claim 4, wherein the first organic dielectric layer has a thickness of 10nm and the first inorganic dielectric layer has a thickness of 10 nm.
6. The display apparatus of claim 1, wherein the quantum dot light emitting diode device comprises:
the bottom electrode is positioned on the substrate base plate;
the electron transmission layer is positioned on one side of the bottom electrode, which is far away from the substrate base plate;
the quantum dot layer is positioned on one side, away from the bottom electrode, of the electron transport layer;
the hole transport layer is positioned on one side, away from the electron transport layer, of the quantum dot layer;
the hole injection layer is positioned on one side of the hole transmission layer, which is far away from the quantum dot layer;
and the top electrode is positioned on one side of the hole injection layer, which is far away from the hole transport layer.
7. The display device according to claim 6, wherein the hole injection layer comprises: a second organic dielectric layer and a second inorganic dielectric layer;
the second organic dielectric layer is close to one side of the top electrode, or the second inorganic dielectric layer is close to one side of the top electrode.
8. The display device according to claim 7, wherein a material of the second organic dielectric layer is 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazatriphenylene;
the second inorganic dielectric layer is made of molybdenum trioxide.
9. The display apparatus of claim 6, wherein the quantum dot light emitting diode device further comprises:
the first interface layer is positioned between the bottom electrode and the substrate base plate and used for enhancing the adhesive force of the bottom electrode;
and the second interface layer is positioned between the bottom electrode and the electron transmission layer and is used for modifying the bottom electrode.
10. The display device according to claim 9, wherein a material of the first interface layer and the second interface layer is aluminum-doped zinc oxide or indium-doped zinc oxide.
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