CN113353898A - Microwave molten salt method for preparing hexagonal boron nitride - Google Patents

Microwave molten salt method for preparing hexagonal boron nitride Download PDF

Info

Publication number
CN113353898A
CN113353898A CN202110365222.3A CN202110365222A CN113353898A CN 113353898 A CN113353898 A CN 113353898A CN 202110365222 A CN202110365222 A CN 202110365222A CN 113353898 A CN113353898 A CN 113353898A
Authority
CN
China
Prior art keywords
boron nitride
molten salt
hexagonal boron
crucible
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110365222.3A
Other languages
Chinese (zh)
Inventor
刘红宇
孙雪苗
赵文凯
程贵刚
朱静
孙明珠
徐博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenyang University of Technology
Original Assignee
Shenyang University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenyang University of Technology filed Critical Shenyang University of Technology
Priority to CN202110365222.3A priority Critical patent/CN113353898A/en
Publication of CN113353898A publication Critical patent/CN113353898A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)

Abstract

The invention discloses a method for preparing hexagonal boron nitride by a microwave molten salt method. The method comprises the following specific steps: using borax, boric acid or boron oxide as a boron source, urea or melamine as a nitrogen source, using sodium chloride-potassium chloride as a molten salt system, using silicon carbide as a microwave absorbent, uniformly mixing the boron source, the nitrogen source and molten salt, then placing the mixture into a small crucible, then covering the small crucible, then embedding the small crucible into a large crucible filled with the silicon carbide, placing the large crucible into a microwave oven, heating for a certain time, taking out the large crucible, cooling, washing a product with deionized water, performing vacuum filtration, and drying to obtain hexagonal boron nitride powder. The invention has the characteristics of short production period, simple process and the like, does not use organic solvent, does not need inert gas protection, has low production cost and does not pollute the environment.

Description

Microwave molten salt method for preparing hexagonal boron nitride
Technical Field
The invention belongs to the field of preparation of inorganic nonmetal powder, and particularly relates to a method for preparing hexagonal boron nitride by a microwave molten salt method.
Background
Hexagonal boron nitride has a similar interlayer structure and lattice parameters to graphite, and is also called white graphite, and each layer is formed by arranging nitrogen atoms and boron atoms alternately into a hexagonal ring network. The heat-resistant lubricating grease has the advantages of good heat resistance, high corrosion resistance, low thermal expansion coefficient, high thermal conductivity, excellent lubricating property, high chemical stability and the like. The boron nitride can be used for manufacturing high-grade refractory materials, high-temperature-resistant lubricants and high-temperature coatings, and also is a raw material for synthesizing cubic boron nitride, and is widely applied to the fields of energy, electronics, aerospace machinery, optical device manufacturing, polymer heat conduction materials, solid lubricating materials, energy storage materials and the like. The method for preparing hexagonal boron nitride mainly comprises a high-temperature method, a solvothermal synthesis method, a hydrothermal synthesis method, a self-propagating combustion method and the like. The equipment used for preparing hexagonal boron nitride by the high-temperature method is generally a tubular furnace, and ammonia gas or inert gas is required for protection, so that the production equipment is limited to a certain extent. The organic solvent used for preparing hexagonal boron nitride by the solvothermal synthesis method is generally toxic solvent such as acetone, toluene and the like, so that the production cost is increased on one hand, and the environment is polluted on the other hand. The hexagonal boron nitride prepared by the hydrothermal synthesis method can use substances with high toxicity, such as sodium borohydride, boron trichloride and the like, and the hexagonal boron nitride is not suitable for industrial production because the hexagonal boron nitride is processed by a subsequent process after synthesis. The self-propagating combustion method generally uses elemental boron as a reaction raw material, and although the method has the advantages of simple processing, low energy consumption, quick reaction and the like, the industrial production of the elemental boron is limited by the expensive price of the elemental boron.
The invention provides a microwave molten salt method for preparing hexagonal boron nitride, which takes a cheap boron source and a nitrogen source as reaction raw materials, reduces the cost and is beneficial to mass production; in addition, ammonia gas, nitrogen gas and other atmospheres are not required to be introduced in the reaction, so that the pollution of the reaction to the environment is reduced; the sodium chloride-potassium chloride is used as a molten salt system, the hexagonal boron nitride can be prepared at normal pressure and low temperature by using the molten salt system with low melting point, and meanwhile, the melt obtained after sintering is insulated from oxygen in the processes of heat preservation and temperature reduction, so that the oxidation of products at high temperature is prevented; the product obtained by washing with deionized water can recover molten salt to the maximum extent, and simultaneously reduce the impurity content in the boron nitride product.
Disclosure of Invention
The invention aims to provide a method for preparing hexagonal boron nitride by a microwave molten salt method, which comprises the following steps: firstly, mixing a boron source and a nitrogen source according to a molar ratio of 1: (5-12), uniformly mixing the molten salt and the nitrogen source in a molar ratio of (0-8) to 1; placing the small crucible filled with the materials into a large crucible filled with silicon carbide, and heating for 30-80 min by microwave; and after the reaction is finished, adding deionized water to remove impurities after the reaction is cooled, and drying for 8-12 h at the temperature of 60-100 ℃ after vacuum filtration to obtain hexagonal boron nitride powder.
The invention has the advantages of preparing the hexagonal boron nitride powder: (1) the method has the advantages that the boron source and the nitrogen source with low cost and low toxicity are used as raw materials, the sodium chloride-potassium chloride is used as a molten salt system, the used reagent is low in price, and the generated byproducts are few and are easy to remove; (2) in the preparation process, no organic solvent or atmosphere is used, and the product does not need acid washing, so that the production safety is improved; (3) the preparation method is simple, has small technical difficulty and is suitable for large-scale production.
The invention is further described with reference to the following examples, which are not intended to limit the scope of the invention.
Best mode for carrying out the invention
Respectively weighing 1.68g of borax, 4.01g of urea, 11.69g of sodium chloride and 14.91g of potassium chloride, uniformly mixing the materials, and putting the mixture into a small crucible; and (3) putting the small crucible filled with the materials into a large crucible filled with silicon carbide, heating for 60min by using microwaves, cooling after the reaction is finished, adding deionized water to remove impurities, and drying for 10h at 90 ℃ after vacuum filtration to obtain the hexagonal boron nitride powder.
Drawings
Figure 1 is an XRD spectrum of a hexagonal boron nitride sample. The obtained sample is proved to be hexagonal boron nitride by conforming to the spectrogram of standard card PDF # 34-0421. Furthermore, no diffraction peaks characteristic of other impurities were present, indicating that no other crystalline impurities were present in the sample.
FIG. 2 shows that the hexagonal boron nitride sample is 500-4000 cm-1FTIR spectra in the wavelength range. Located at 780cm-1And 1370cm-1The absorption peaks at the left and right wavelengths respectively correspond to out-of-plane bending vibration of the B-N-B bond and in-plane stretching vibration of the B-N bond. At 3410cm-1The nearby absorption peak is due to the presence of O-H bonds after partial hydrolysis of the sample surface. FTIR spectraNo absorption peaks for other impurities were observed, indicating a very high product purity.

Claims (3)

1. The microwave molten salt method for preparing hexagonal boron nitride is characterized by comprising the following steps: uniformly mixing a boron source, a nitrogen source and a molten salt system according to a certain proportion, and filling the mixture into a large crucible filled with silicon carbide; and (3) heating the crucible in a microwave oven for a period of time, cooling the crucible, adding deionized water, washing and drying to obtain the hexagonal boron nitride.
2. The method for preparing hexagonal boron nitride according to claim 1, wherein the boron source is one of anhydrous borax, boric acid or boron oxide, and the nitrogen source is one of melamine or urea.
3. The microwave molten salt method for preparing hexagonal boron nitride according to claim 1, wherein the molar ratio of the boron source to the nitrogen source is 1:5 to 1: 12.
CN202110365222.3A 2021-04-06 2021-04-06 Microwave molten salt method for preparing hexagonal boron nitride Pending CN113353898A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110365222.3A CN113353898A (en) 2021-04-06 2021-04-06 Microwave molten salt method for preparing hexagonal boron nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110365222.3A CN113353898A (en) 2021-04-06 2021-04-06 Microwave molten salt method for preparing hexagonal boron nitride

Publications (1)

Publication Number Publication Date
CN113353898A true CN113353898A (en) 2021-09-07

Family

ID=77525136

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110365222.3A Pending CN113353898A (en) 2021-04-06 2021-04-06 Microwave molten salt method for preparing hexagonal boron nitride

Country Status (1)

Country Link
CN (1) CN113353898A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114083853A (en) * 2021-11-12 2022-02-25 江苏冠之星管道***有限公司 Light power cable reinforced protective sleeve and preparation method thereof
CN114132904A (en) * 2021-12-06 2022-03-04 湖南大学 High oil absorption whitening hexagonal boron nitride porous microspheres for cosmetics

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114083853A (en) * 2021-11-12 2022-02-25 江苏冠之星管道***有限公司 Light power cable reinforced protective sleeve and preparation method thereof
CN114132904A (en) * 2021-12-06 2022-03-04 湖南大学 High oil absorption whitening hexagonal boron nitride porous microspheres for cosmetics

Similar Documents

Publication Publication Date Title
CN113353898A (en) Microwave molten salt method for preparing hexagonal boron nitride
KR20140095049A (en) Process for continuous production of boron nitride powder
CN102674357A (en) Method for synthesizing high-purity silicon carbide raw material for growing silicon carbide single crystals
CN103553002A (en) Method for preparation of high purity alpha phase silicon nitride powder from recovered silicon chip cut sawdust
CN103072992A (en) Preparation method of high-purity silicon
CN102897763A (en) Low-temperature rapid synthesis method of alpha-SiC micropowder
CN105154704A (en) Preparation method of high-temperature-resistant magnesium alloy material
CN109231231B (en) Low-temperature preparation method of zirconium diboride powder
CN110723740B (en) Method for preparing high-thermal-conductivity boron phosphide by molten salt growth method
CN102199039A (en) Polymer network preparation method for hexagonal boron nitride ceramic powder with high specific surface area
CN103771360B (en) Prepare the method for AlN powder
CN103787289A (en) Graphite-phase boron carbon nitride with adjustable bandwidth and synthesis method of graphite-phase boron carbon nitride
Hou et al. Preparation of α‐Si3N4 by direct nitridation using polysilicon waste by diamond wire cutting
CN104725049A (en) Preparation method of aluminum nitride/boron nitride composite ceramic powder
CN100567210C (en) The preparation method of silicon-boron-nitrogen ceramic fiber precursor body
JP5383688B2 (en) Method and apparatus for producing silicon
CN110510597B (en) Method for preparing high-purity carbon by utilizing sucrose
CN101948480B (en) Boron nitride ceramic fiber organic precursor and preparation method thereof
CN1239384C (en) Method for preparing powder material of silicon nitride under low temperature
CN1296932A (en) Process for preparing aluminium nitride ceramic powder
CN114477184A (en) Preparation method of silicon carbide powder
CN103395752A (en) Preparation method for boron nitride micron solid ball
CN106684236A (en) Method for preparing high-performance Cu2GeTe3 thermoelectric material
CN103435099B (en) The single-phase Bi of quick preparation 2s 3the method of thermoelectric compound
CN1453211A (en) Prepn of aluminium borate whiskers

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication