CN113328227A - Transition structure from microstrip line to non-radiative dielectric waveguide - Google Patents
Transition structure from microstrip line to non-radiative dielectric waveguide Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
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Abstract
The invention discloses a transition structure from a microstrip line to a non-radiative dielectric waveguide, and belongs to the technical field of millimeter waves. The structure of the invention adopts the sequential transition of a preceding stage device, a microstrip transmission section, a double-ridge fin line transformation section, a gradual change horn section and an NRD guide, and inputs coaxial line TEM signals into the microstrip transmission section to transmit a quasi-TEM mode; then the signal is input into a double ridge fin line transformation section, and a rectangular waveguide TE deflected by 90 degrees from a quasi-TEM mode to a polarization direction10Mode conversion; the signal passes through the gradual change horn section to generate a plurality of high-order rectangular waveguide modes, and finally the LSM transmitted by the NRD waveguide is formed01Mode(s). The structure has good bandwidth characteristics and is suitable for integrated application in a system.
Description
Technical Field
The invention belongs to the technical field of millimeter waves, and particularly relates to a transition structure for realizing transition from a microstrip line to a non-radiative dielectric waveguide by using a microstrip line transition section, a double-ridge fin line transition section and a transition horn section.
Background
With the increasing depth of social informatization, the microwave spectrum is becoming more and more crowded, and the communication requires information processing, exchanging and transmitting capabilities with larger capacity, wider frequency band and higher speed, and the millimeter wave is favored by its short wavelength and wide frequency band. However, in the millimeter wave band, the loss of the transmission structure is also large due to the high operating frequency. Therefore, the loss factor is a primary consideration in selecting the millimeter wave transmission structure.
At present, common transmission structures comprise structures such as metal waveguides and microstrip lines, and the loss of the metal waveguides is smaller than that of the microstrip lines, so that the waveguide structure is usually used for reducing the transmission loss, but the waveguide is not a planar structure, is not suitable for an integration process, and is not suitable for chip integration; microstrip lines are planar structures, which can use integrated processes, but with large losses. Thus, new transmission structures with less loss characteristics while being conveniently integrated with planar structures are desired in millimeter wave applications.
Non-radiative dielectric waveguides (NRDs) were originally proposed to attract a wide range of interest with their unique low metal loss characteristics at high frequency bands and non-radiative characteristics at bends and discontinuities. The NRD guide consists of two parallel metal plates and a dielectric strip sandwiched between the two metal plates, wherein the distance between the two parallel metal plates is less than lambda0/2(λ0Is a free space wavelength).
At present, the excitation mode of the non-radiative dielectric waveguide mainly utilizes waveguide excitation. In 2005, s.mbe EMANE et al proposed a rectangular waveguide-to-NRD conversion structure, and the purpose of using such waveguide excitation was to match the NRD waveguide to a standard rectangular waveguide, and excitation was achieved by tapering the medium in the NRD waveguide outward and inserting the extended medium into the rectangular waveguide. The excitation mode is used for excited LSM01The mode (NRD guide main mode) is not high in purity, and affects the transmission of the NRD guide. Meanwhile, the waveguide structure is not a planar structure and is not beneficial to the integration process, and the measurement insertion loss of the design in the Ka wave band is 1.24 dB. In the same year, Futoshi Kuroki et al proposed a transition between an NRD guide suitable for the construction of a high-performance millimeter-wave integrated circuit and a microstrip line for mounting a semiconductor device in the 60GHz band. The design of the transition structure focuses on the way of field matching between the NRD guide and the microstrip line. The structure is suitable for a vertical strip line and a coaxial line, and the insertion loss is less than 0.5dB under the condition that the central frequency is 60.5 GHz.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a transition structure from a microstrip line to a non-radiative dielectric waveguide, which adopts the sequential transition of a preceding device, a microstrip transmission section, a double-ridge fin line transformation section, a gradual change horn section and an NRD waveguide, has good bandwidth characteristics, and is suitable for integrated application in a system.
The invention is realized by the following technical scheme:
a transition structure from microstrip line to non-radiative dielectric waveguide for converting quasi-TEM mode transmitted in preceding stage device into LSM transmitted in NRD waveguide01The mode comprises a microstrip line transmission section, a double-ridge fin line transformation section and a gradual change horn section which are connected in sequence.
The microstrip line transmission section is used for being connected with a preceding-stage device (such as an SMA connector), and comprises a first rectangular medium substrate, a wide-edge metal patch arranged on the back surface of the first medium substrate, and a narrow-edge metal patch arranged on the front surface of the first medium substrate.
The double-ridge fin line transformation section is used for converting a quasi-TEM mode of the microstrip line transmission section into TE with the electric field polarization direction rotating by 90 degrees10The module comprises a rectangular waveguide, a second rectangular dielectric substrate arranged in a rectangular waveguide cavity, an index gradual change metal patch arranged on the back of the second rectangular dielectric substrate, and a cosine square gradual change metal patch arranged on the front of the second rectangular dielectric substrate.
The gradual change horn section is a waveguide horn with the unchanged width and the gradually-expanded narrow edge, wherein a medium strip of the NRD waveguide extends into the gradual change horn section and is used for converting a waveguide transmission mode of the double-ridge fin line conversion section into an LSM of the NRD waveguide01A transmission mode.
Further, the second rectangular dielectric substrate is an extension of the first rectangular dielectric substrate; the lower edge of the exponential gradual change metal patch and the lower edge of the second rectangular medium substrate are positioned on the same straight line, the upper edge of the exponential gradual change metal patch is an exponential gradual change curve, and the tail end of the exponential gradual change metal patch is provided with a first rectangular extension section; the line width of the cosine square gradient metal patch is consistent with the width of the narrow-side metal patch, the curve of the cosine square gradient metal patch which is bent upwards is a cosine square curve, the upper side boundary of the cosine square gradient metal patch and the upper edge of the second rectangular medium substrate are positioned on the same straight line, and the tail end of the cosine square gradient metal patch is provided with a second rectangular extension section.
Furthermore, a rectangular waveguide shell is arranged on the outer side of the microstrip line transmission section, and the size of the rectangular waveguide shell is the same as that of the rectangular waveguide, so that the microstrip line transmission section is convenient to assemble.
Furthermore, the characteristic impedance of the microstrip line transmission section is 50 Ω, so that the impedance matching with the SMA connector is realized.
The whole transition structure inputs coaxial line TEM signals from the SMA joint to the microstrip line transmission section, and a standard microstrip line transmits a quasi-TEM mode, and almost all fields are bound by the microstrip line at the moment; then the signal is transmitted to a double-ridge fin line conversion section, and the rectangular waveguide TE deflects 90 degrees from the quasi-TEM mode of the microstrip line to the polarization direction10Mode conversion; the signal passes through the gradually-changed horn section to generate a plurality of high-order rectangular waveguide modes, and finally the LSM transmitted by the NRD waveguide is formed01And (4) mode, and finishing the whole transition process.
The invention has the advantages that:
(1) the microstrip line transmission section-double-ridge fin line conversion section is adopted as a transition structure, and the microstrip line transmission section-double-ridge fin line conversion structure has good bandwidth characteristics.
(2) The double-ridge fin line structure has relatively low requirements on machining and assembling precision, and the structural form is convenient for integrated application in a system.
Drawings
Fig. 1 is a schematic structural diagram of a microstrip line transmission section-double ridge fin line transformation section according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of port field distribution of a microstrip transmission section;
FIG. 3 is a schematic diagram of end field distribution of a double ridge-fin line transformation segment;
FIG. 4 is a graph of transition structure transmission capability results;
FIG. 5 is a schematic diagram of a transition structure of an embodiment of the present invention;
FIG. 6 is a schematic diagram of the overall transmission structure for performance testing according to the present embodiment;
FIG. 7 is a schematic diagram of the field distribution at the input end of the NRD guide, i.e., the output port of the tapered waveguide;
fig. 8 is a transmission capability result diagram of the transition structure according to the embodiment of the present invention.
The reference numbers illustrate: 1 denotes a first rectangular dielectric substrate; 2 denotes a second rectangular dielectric substrate; 3-1 represents a narrow-edge metal patch; 3-2 represents a broadside metal patch; 4-1 represents a cosine square gradient metal patch; 4-2 represents an exponential gradient metal patch; 5 denotes a rectangular waveguide; 6 denotes a gradual horn; 7 upper and lower metal plates of the NRD guide; and 8 denotes a dielectric strip of NRD guide.
Detailed Description
In order to make the technical means and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to specific embodiments and with reference to the accompanying drawings.
Referring to fig. 1 and 5, the transition structure provided by this embodiment includes a microstrip line transmission section, a double-ridge fin line transformation section, and a gradual-change horn section, which are connected in sequence.
The microstrip line transmission section is a 50-omega standard microstrip line and comprises a first rectangular medium substrate (1), a narrow-side metal patch (3-1) on the front surface of the first rectangular medium substrate and a wide-side metal patch (3-2) on the back surface of the first rectangular medium substrate. The width W of the narrow-side metal patch (3-1) is 0.76mm, and the widths of the wide-side metal patch (3-2), the first rectangular medium substrate and the second rectangular medium substrate are consistent and are 2.7 mm. A rectangular waveguide shell convenient to assemble is arranged on the outer side of the microstrip transmission section, the first rectangular medium substrate and the second rectangular medium substrate are parallel to the narrow side of the rectangular waveguide shell, the size of the wide side of the rectangular waveguide shell is 4mm, and the size of the narrow side of the rectangular waveguide shell is 2.7 mm; the length of the microstrip transmission section is at least 3mm, so that the probe of the SMA joint cannot be welded.
The dual-ridge fin line transformation section converts a quasi-TEM mode in the microstrip transmission section into a rectangular waveguide TE rotated by 90 DEG10Mode and converts 50 omega of a nearly standard microstrip line to a high impedance rectangular waveguide TE10And (5) molding. The rectangular waveguide comprises a rectangular waveguide (5), a second rectangular dielectric substrate (2) arranged in a rectangular waveguide cavity, an index gradual change metal patch (4-2) arranged on the back of the second rectangular dielectric substrate, and a cosine square gradual change metal patch (4-1) arranged on the front of the second rectangular dielectric substrate. The double-ridge fin line gradual design adopts a smooth impedance transformation curve along the gradual change direction so as to ensure that the reflection loss introduced by the double-ridge fin line gradual design is lower than the usable reflection loss in a required frequency bandIs measured.
Specifically, the total length W2 of the double-ridge fin line transformation section is 5.8mm, and the initial width of the metal patches on the two sides of the double-ridge fin line transformation section is consistent with the width of the rectangular patches on the two sides of the microstrip transmission section. The lower edge of the index gradual change metal patch and the lower edge of the wide-edge metal patch are positioned on the same straight line, the upper edge of the index gradual change metal patch is an index gradual change curve of the formula (1), and the tail end of the index gradual change metal patch is also provided with a first rectangular extension section. The line width of the cosine square gradually-changed metal patch is consistent with the width of the narrow-side metal patch, the curve bent upwards is a cosine square curve of the formula (2), the upper side boundary of the cosine square gradually-changed metal patch and the upper edge of the wide-side metal patch are located on the same straight line, and the tail end of the cosine square gradually-changed metal patch is also provided with a second rectangular extension section. Due to the limitation of the manufacturing process, the transition of the end of the tapered metal patch to 0.02mm in this embodiment is provided with a rectangular extension with a width of 0.02mm and a length W3 of 0.5 mm.
Curve of exponential function:
d(z)＝s-(b-s)(1-z/L) (1)
cosine square curve:
d(z)＝b-(b-s)sin2(πz/2L) (2)
wherein L is the length of the double-ridge fin line transformation section, b is the width of the narrow side of the rectangular waveguide, s is the width of the narrow-side metal patch, and z is the longitudinal position.
The gradually-changed horn section is a waveguide horn with the unchanged width side size and the linearly gradually-expanded narrow side, and a rectangular waveguide TE is arranged10LSM in multi-mode synthetic NRD guide formed by mode gradual change of waveguide aperture01Mode(s). The length of the gradual change horn is 10mm, and the opening angle theta is 29.5 degrees.
LSM is used for designing gradual change loudspeaker01Expanding into a mode in the rectangular waveguide, as shown in equation (3):
wherein:
A1n(x,y,z)＝∫∫apENRD(x,y,z)·E1n e(x,y)dxdy
B1n(x,y,z)＝∫∫apENRD(x,y,z)·E1n *(x,y)dxdy
ENRD(x, y, z) is LSM in NRD guide01Field distribution of modes; e1n e(x, y) is TEmnA mode electric field; e1n *(x, y) is TMmnA mode electric field; a. the1n(x, y, z) is an amplitude coefficient of each electric wave mode; b is1n(x, y, z) is an amplitude coefficient of each magnetic wave mode; n is a mode label; ap represents the integral over the cross-sectional area.
The action process of the transition structure of the embodiment is as follows: inputting a micro-strip quasi-TEM mode from an incident port, and converting the vertically polarized quasi-TEM mode into a horizontally polarized rectangular waveguide TE through a double-ridge fin line transformation section10Mode, in the process of gradual change of the double ridge fin lines, the four walls of the rectangular waveguide gradually play a role in restraining the field, the process is also a mode conversion process, and then the TE of the rectangular waveguide is carried out10The mode is matched with the NRD guide mode by forming multiple modes by using the gradual change horn.
As shown in fig. 2, the input mode of the entrance port is a quasi-TEM mode.
As shown in fig. 3, the electric field at the end of the double-ridged finline-change segment becomes a waveguide mode with a polarization direction perpendicular to the input mode polarization direction.
As shown in fig. 4, the reflection of the quasi-TEM mode incident from the incident port is low, about-28 dB, and the transmission loss is about 0.14 dB.
Fig. 6 is a schematic diagram of an overall structure for testing the performance of a transition structure, which includes an NRD guide and two transition structures symmetrically disposed at two ends of the NRD guide, wherein the dielectric strip has a length of 7.5mm deep into the tapered horn section.
As shown in fig. 7, which is the transmission capability of the whole structure in fig. 6, it can be seen that the bandwidth of the 8mm band with reflection below-20 dB is about 2GHz, and the insertion loss is about 0.94 dB.
In conclusion, the transition structure of the invention effectively realizes the transition from the microstrip line mode to the NRD mode, and has the advantages of simple structure, relatively low requirement on processing precision, good transmission performance and the like.
From the above description, the person skilled in the art will have a clear understanding of the device of the invention. The above description is only exemplary of the present invention and should not be taken as limiting, and any modifications, equivalents, improvements and the like that are made within the spirit and the principle of the present invention, such as mode conversion using a double-ridge fin line in a microstrip line to an NRD guide, should be included in the scope of the present invention.
Claims (4)
1. A transition structure from a microstrip line to a non-radiative dielectric waveguide is used for converting a quasi-TEM mode transmitted in a preceding stage device into an LSM01 mode transmitted in an NRD waveguide, and is characterized by comprising a microstrip line transmission section, a double-ridge fin line transformation section and a gradual-change horn section which are sequentially connected;
the microstrip line transmission section is used for being connected with a preceding-stage device and comprises a first rectangular dielectric substrate, a wide-edge metal patch arranged on the back surface of the first dielectric substrate and a narrow-edge metal patch arranged on the front surface of the first dielectric substrate;
the double-ridge fin line transformation section is used for converting a quasi-TEM (transverse electric and magnetic) mode of the microstrip line transmission section into a TE10 mode with an electric field polarization direction rotated by 90 degrees, and comprises a rectangular waveguide, a second rectangular dielectric substrate arranged in a rectangular waveguide cavity, an index gradual change metal patch arranged on the back of the second rectangular dielectric substrate, and a cosine square gradual change metal patch arranged on the front of the second rectangular dielectric substrate;
the gradual change horn section is a waveguide horn with a constant width and a gradually expanded narrow edge, wherein a medium strip of the NRD waveguide extends into the gradual change horn section and is used for converting a waveguide transmission mode of the double-ridge fin line conversion section into an LSM01 transmission mode of the NRD waveguide.
2. The transition structure from a microstrip line to a non-radiative dielectric waveguide of claim 1, wherein the second rectangular dielectric substrate is an extension of the first rectangular dielectric substrate; the lower edge of the exponential gradual change metal patch and the lower edge of the second rectangular medium substrate are positioned on the same straight line, the upper edge of the exponential gradual change metal patch is an exponential gradual change curve, and the tail end of the exponential gradual change metal patch is provided with a first rectangular extension section; the line width of the cosine square gradient metal patch is consistent with the width of the narrow-side metal patch, the curve of the cosine square gradient metal patch which is bent upwards is a cosine square curve, the upper side boundary of the cosine square gradient metal patch and the upper edge of the second rectangular medium substrate are positioned on the same straight line, and the tail end of the cosine square gradient metal patch is provided with a second rectangular extension section.
3. The transition structure from a microstrip line to a non-radiative dielectric waveguide of claim 1 or 2, wherein a rectangular waveguide casing is disposed outside the microstrip line transmission section, and the size of the rectangular waveguide casing is the same as that of the rectangular waveguide.
4. The transition structure from a microstrip line to a non-radiative dielectric waveguide of claim 1 or 2, wherein the characteristic impedance of the transmission section of the microstrip line is 50 Ω, so as to achieve impedance matching with the SMA joint of the preceding device.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113960338A (en) * | 2021-10-08 | 2022-01-21 | 西安交通大学 | Micro-coaxial radio frequency probe based on multi-material additive manufacturing process |
| CN114256569A (en) * | 2021-11-22 | 2022-03-29 | 电子科技大学 | Rectangular waveguide mode converter and power distribution synthesizer |
| CN114284676A (en) * | 2021-12-24 | 2022-04-05 | 电子科技大学 | Waveguide-microstrip transition structure based on V-shaped antenna |
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2021
- 2021-05-27 CN CN202110584355.XA patent/CN113328227A/en active Pending
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113960338A (en) * | 2021-10-08 | 2022-01-21 | 西安交通大学 | Micro-coaxial radio frequency probe based on multi-material additive manufacturing process |
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| CN114256569A (en) * | 2021-11-22 | 2022-03-29 | 电子科技大学 | Rectangular waveguide mode converter and power distribution synthesizer |
| CN114256569B (en) * | 2021-11-22 | 2022-11-08 | 电子科技大学 | Rectangular waveguide mode converter and power distribution synthesizer |
| CN114284676A (en) * | 2021-12-24 | 2022-04-05 | 电子科技大学 | Waveguide-microstrip transition structure based on V-shaped antenna |
| CN114284676B (en) * | 2021-12-24 | 2022-07-29 | 电子科技大学 | Waveguide-microstrip transition structure based on V-shaped antenna |
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