CN113314446A - Chip transfer device and chip transfer method - Google Patents

Chip transfer device and chip transfer method Download PDF

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Publication number
CN113314446A
CN113314446A CN202010133893.2A CN202010133893A CN113314446A CN 113314446 A CN113314446 A CN 113314446A CN 202010133893 A CN202010133893 A CN 202010133893A CN 113314446 A CN113314446 A CN 113314446A
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chip
transfer
groove
boss
transfer substrate
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CN113314446B (en
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覃宗伟
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

The invention provides a chip transfer device and a chip transfer method. The chip transfer device is used for transferring chips and comprises a transfer substrate, wherein the surface of the transfer substrate is provided with a plurality of grooves, each groove can only accommodate a boss on the surface of one chip main body, and the chip main bodies are lapped on the openings of the grooves. The invention also provides a chip transfer method, wherein a plurality of chips are placed on the surface of the transfer substrate, then the shaking screen is carried out, and the chips move on the surface of the transfer substrate until at least part of the bosses fall into the grooves. Make the boss fall into the recess through shaking the sieve in, make the chip sit on shifting the base plate, the rethread removes the batch that shifts that the base plate can realize the chip and shifts, improves the efficiency that the chip shifted, simultaneously, shakes the sieve in-process, and the original position of each chip on the film source is disturbed, can effectively avoid the influence of the regional inhomogeneous phenomenon that the film source exists, can promote the transfer effect of chip.

Description

Chip transfer device and chip transfer method
Technical Field
The invention relates to the technical field of semiconductors, in particular to a chip transfer device and a chip transfer method.
Background
The LED (Light Emitting Diode) has many advantages such as low energy consumption, long service life, no pollution, small volume, and rich color, and is widely used in various lighting and display devices. Micro-LEDs (Micro-LEDs) are LED miniaturization and matrixing technologies, and specifically refer to an array of high-density Micro-sized LED chips integrated on a display panel, where each LED chip is addressable and individually driven to light, and the pixel distance between two adjacent LED chips can be reduced from millimeter level to micron level, so as to form ultra-small-pitch LEDs, and make the display panel achieve ultra-high pixel and ultra-high resolution. In the micro LED packaging process, the number of chips is large, so that the requirement for rapidly transferring a large number of chips is more prominent, and higher requirements for the transferring precision of the chips are provided.
At present, micro LED batch transfer techniques include a precision grabbing (Fine Pick & Place) method, a fluid assembly method, an electrode shaking method, and the like. The precise grasping method is a method of precisely grasping a chip by Electrostatic adsorption (Static electric), Van Der waals force (Van Der Walls force), Electromagnetic force (Electromagnetic), Magnetic force (Magnetic), or the like. The fluid assembly method and the ball electrode shaking method are characterized in that grooves corresponding to chips are formed in a target substrate, and then the whole chip is arranged in the groove.
However, the above conventional chip transfer method has some problems, which are specifically embodied in that:
1. for the precise grabbing method, the amount of one transfer is usually limited (about several hundreds), each transfer needs precise alignment, the transfer efficiency is low, in addition, the method is directly absorbed and transferred according to the original position of the chip on the film source (such as a wafer), if the film source has a regional non-uniformity phenomenon, the similar non-uniformity phenomenon exists in the product obtained after the transfer, such as a micro LED display panel;
2. for the fluid assembly method and the electrode shaking method, a serious problem of chip inversion exists, namely, partial chip electrodes and electrodes on a substrate cannot be accurately aligned, the display effect of a display screen is influenced, and if reverse chips are too many, all chips need to be removed and transferred again, and the chip transfer efficiency is influenced.
Therefore, the conventional chip transfer method still has the problems of low transfer efficiency and poor transfer effect (such as uneven pictures and more chips inverted).
Disclosure of Invention
The invention provides a chip transfer device and a chip transfer method, which aim to solve the problems of low transfer efficiency and poor transfer effect during batch transfer of chips.
According to an aspect of the present invention, there is provided a chip transfer apparatus for transferring a chip having a chip main body and a boss provided on a side surface of the chip main body, the chip transfer apparatus including a transfer substrate having a surface provided with a plurality of grooves;
wherein each of the recesses is capable of accommodating only one of the lands of the chip, and such that a chip body connected to the land is lapped over an opening of the recess.
Optionally, the maximum width of the boss is smaller than or equal to the minimum width of the groove, and the difference is within a set position precision range.
Optionally, an orthographic projection area of the opening of the groove on the bottom surface of the groove is smaller than an area of the bottom surface of the groove.
Optionally, an included angle formed by the bottom surface of the groove and the side wall of the groove is smaller than or equal to an included angle formed by the end surface of the boss far away from the chip main body and the side wall of the boss.
Optionally, an orthographic projection area of the opening of the groove on the bottom surface of the groove is larger than that of the bottom surface of the groove, and the size of the bottom surface of the groove and the size of the end surface of the accommodated boss are equal in at least one direction.
Optionally, the depth of the groove is greater than or equal to the height of the boss.
Optionally, the longitudinal section and the cross section of the boss and the groove are both rectangular, trapezoidal, semicircular, semi-elliptical or a combination of more than two.
Optionally, the width of the chip body is 1 μm to 1mm along the direction in which the chip body is lapped on the opening of the groove.
Optionally, in the height direction of the boss, the thickness of the chip main body is greater than the maximum size between two points at the opening of the groove.
Optionally, in the height direction of the boss, the thickness of the chip body is at least smaller than 1/2, which is the largest dimension of the opening of the groove in one direction, and the sum of the height of the boss and the thickness of the chip body is larger than the largest dimension of the opening of the groove in the direction.
Optionally, the surface of the transfer substrate is provided with at least two kinds of grooves, and the openings of the different kinds of grooves are different in shape.
Optionally, the chip is a micro LED chip.
According to another aspect of the present invention, there is provided a chip transfer method using the above chip transfer apparatus, including:
placing a plurality of the chips on the surface of the transfer substrate; and
and shaking the screen to enable the chip to move on the surface of the transfer substrate until at least part of the boss falls into the groove, and lapping a chip main body connected with the boss falling into the groove on an opening of the groove.
Optionally, in the step of shaking the screen, the chip moves in a direction parallel to the surface of the transfer substrate and moves up and down in a vertical direction of the surface of the transfer substrate.
Optionally, the movement amplitude of the chip in the direction parallel to the surface of the transfer substrate is greater than the movement amplitude in the vertical direction of the surface of the transfer substrate.
Optionally, in the step of shaking the screen, a horizontal auxiliary airflow is added on the surface of the transfer substrate.
Optionally, after the shaking screen is completed, the method further comprises:
and inclining the transfer substrate, so that the chip, of which the boss does not fall into the groove, among the chips on the surface of the transfer substrate slides away from the surface of the transfer substrate, and all the bosses falling into the groove lean against the opening edge of the groove along the same direction.
Optionally, after the chip whose boss does not fall into the groove slides off the surface of the transfer substrate, the method further includes:
performing AOI scanning on the transfer substrate; and
and filling the grooves which are not filled with the bosses on the transfer substrate based on the AOI scanning result.
The chip transfer device of the invention, wherein the surface of the transfer substrate is provided with a plurality of grooves, each groove can only accommodate the lug boss of one chip, and the chip main body connected with the lug boss is lapped on the opening of the groove. When the chip is transferred by utilizing the transfer substrate, the position of the groove can be used as the position for placing the chip, the boss falls into the groove to randomly distribute the position of each chip, optical alignment is not needed, the efficiency of chip transfer can be improved, the influence of the phenomenon of uneven regionality of a chip source can be avoided, and in the boss and the chip main body, only the boss can fall into the groove, the problem of chip inversion when the chip is transferred can be effectively avoided, so that the chip transfer effect can be improved.
The chip transfer method of the present invention utilizes the above chip transfer apparatus, wherein after a plurality of the chips are placed on the surface of the transfer substrate, the chips are moved on the surface of the transfer substrate by a shaker until at least a part of the lands fall into the grooves, and the chip main bodies connected to the lands that fall into the grooves are lapped on the openings of the grooves. The chip transfer method is simple and convenient to operate, the chips can be arranged on the transfer substrate according to a certain arrangement mode without optical alignment, chip transfer efficiency is improved, meanwhile, in the shaking and screening process, the original positions of the chips on the chip source are disordered, the influence of the regional uneven phenomenon of the chip source can be effectively avoided, and therefore the chip transfer effect can be improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a groove disposed on a transfer substrate in a chip transfer device according to an embodiment of the invention.
Fig. 2 is a schematic cross-sectional view of a chip transferred by the chip transfer apparatus according to an embodiment of the invention.
Fig. 3 is a schematic cross-sectional view of a groove accommodating a bump in a chip transfer device according to an embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of a groove accommodating a bump in a chip transfer device according to another embodiment of the invention.
FIG. 5a is a schematic plan view of a groove and a land and a top view of a chip electrode in an embodiment of the invention.
FIG. 5b is a schematic plan view of grooves and lands and a top view of a chip electrode in another embodiment of the present invention.
FIG. 5c is a schematic plan view of grooves and lands and a top view of a chip electrode in accordance with yet another embodiment of the present invention.
Fig. 6a to 6d are schematic cross-sectional views illustrating steps of forming a groove on a transfer substrate according to an embodiment of the invention.
Fig. 7a to 7f are schematic cross-sectional views illustrating steps of forming a bump on a chip body according to an embodiment of the invention.
Fig. 8 is a schematic cross-sectional view illustrating an inclined transfer substrate in a chip transfer method according to an embodiment of the invention.
Fig. 9a to 9g are schematic cross-sectional views illustrating a chip transfer process according to an embodiment of the invention.
Fig. 10 is a schematic diagram of a probability model of a land falling (Trapping) and leaving (Trapping) groove in a chip transfer apparatus according to an embodiment of the present invention.
Description of reference numerals:
100-a semiconductor substrate; 101-a chip electrode; 102-a chip body; 103-chip; 110-a protective layer; 120-boss; 130-a silicon oxide layer; 200-a transfer substrate; 201-hard flat plate; 202-dielectric film; 203-grooves; 204-metal oxide; 301-target substrate electrode.
Detailed Description
The chip transfer apparatus and the chip transfer method according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided solely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. For the sake of clarity, in all the drawings for assisting the description of the embodiments of the present invention, the same components are denoted by the same reference numerals in principle, and the duplicated description thereof is omitted.
It is to be understood that the various embodiments are merely exemplary of specific embodiments of making and using embodiments and are not to be construed as limiting the scope of the invention in making and using it. Moreover, the respective descriptions of the embodiments are only for clearly explaining the meaning of the present invention, but technical features in each embodiment do not belong to features unique to the embodiment, and all the features of each embodiment may be taken as features of one general embodiment. In some embodiments, the technical features of the following embodiments can be related and inspired to form a new embodiment.
Example one
The present embodiment mainly describes a chip transfer apparatus, which can solve the problems of low transfer efficiency and poor transfer effect when transferring chips in batches. The concrete description is as follows.
The chip transfer device in this embodiment is used for transferring a chip having a chip main body and a boss provided on a surface of one side of the chip main body, and includes a transfer substrate having a plurality of grooves provided on a surface thereof, wherein each of the grooves can accommodate only one boss of the chip, and the chip main body connected to the boss is made to overlap an opening of the groove.
In this embodiment, the chip is, for example, a micro LED chip, the chip may further include a chip electrode, the chip electrode is used for forming an electrical connection with a target substrate electrode on a target substrate, the boss of the chip is disposed on the other side opposite to the chip electrode, and according to a requirement of bonding with the target substrate and in order to avoid damage to the electrode in a chip transfer process, the chip main body is provided with a protection layer on the surface of the other side opposite to the boss, and the protection layer covers the surface of the chip main body between the chip electrode and the chip electrode. However, in other embodiments, the lands on the surface of the chip body may be disposed on the same side of the chip body as the chip electrodes.
In order that the boss may fall into the groove, the maximum width of the boss is smaller than or equal to the minimum width of the groove, and the difference is within a set positional accuracy range. Preferably, the width of the chip body is 1 μm to 1mm in a direction in which the chip body is lapped on the opening of the groove.
In order to make the boss falling into the groove limited by the groove to move within a precision range, the orthographic area of the opening of the groove on the bottom surface of the groove can be smaller than the area of the bottom surface of the groove; the included angle formed by the bottom surface of the groove and the side wall of the groove can be smaller than or equal to the included angle formed by the end surface of the boss far away from the chip main body and the side wall of the boss.
In order to improve the chip transfer precision, the orthographic projection area of the opening of the groove on the bottom surface of the groove can be larger than the area of the bottom surface of the groove, and the sizes of the bottom surface of the groove and the end surface of the boss accommodated in the bottom surface of the groove in at least one direction can be equal, so that the precision of the chip in the groove is improved, and the chip transfer precision can be improved. In this embodiment, the depth of the groove may be greater than or equal to the height of the boss.
Specifically, the longitudinal sections of the lands and the grooves may be rectangular, trapezoidal, semicircular, semi-elliptical, or a combination thereof in a direction perpendicular to the surface of the chip body and in a direction perpendicular to the surface of the transfer substrate. The lands and grooves may have a rectangular, trapezoidal, semicircular, semi-elliptical, or combination thereof cross-section in a direction parallel to the surface of the chip body and in a direction parallel to the surface of the transfer substrate.
In order to prevent the chip from being inverted in the groove on the transfer substrate, in the height direction of the boss, the thickness of the chip main body may be larger than the maximum size between two points at the opening of the groove to prevent the chip main body from falling into the groove; alternatively, in the height direction of the boss, the thickness of the chip body is at least smaller than 1/2 the largest dimension of the opening of the groove in one direction, and the sum of the height of the boss and the thickness of the chip body is larger than the largest dimension of the opening of the groove in the direction.
In this embodiment, the surface of the transfer substrate may be provided with at least two kinds of grooves, and the openings of the different kinds of grooves have different shapes. Due to the fact that the grooves with various opening shapes are formed in the transfer substrate, various chips can be transferred by the chip transfer device. For example, when the full-color function of the display screen is realized, three kinds of micro LED chips are required to be transferred, and the light emitting color of each kind of micro LED chip is different. In order to transfer the three micro LED chips simultaneously, grooves with three opening shapes are formed in the transfer substrate, the shapes of bosses on the three micro LED chips are different corresponding to the three grooves, and one boss shape only corresponds to one groove, so that the boss on the chip is prevented from mistakenly falling into the groove which does not correspond to the boss, and the chip transfer effect is prevented from being influenced.
In order to make the features of the chip transfer device more clear, the chip transfer device will be described below by taking as an example that the grooves are trapezoidal in longitudinal section perpendicular to the surface of the transfer substrate.
Fig. 1 is a schematic cross-sectional view of a groove disposed on a transfer substrate in a chip transfer device according to an embodiment of the invention. Fig. 2 is a schematic cross-sectional view of a chip transferred by the chip transfer apparatus according to an embodiment of the invention. As shown in fig. 1 and 2, in the present embodiment, the longitudinal section of the land is trapezoidal in the direction perpendicular to the surface of the chip main body, and the longitudinal section of the groove is also trapezoidal in the direction perpendicular to the surface of the transfer substrate.
Specifically, for the cross section of the groove in the direction perpendicular to the surface of the transfer substrate, the opening width of the groove is d4, the width of the bottom of the groove is d5, the depth of the groove is h2, and the included angle formed by the bottom surface of the groove and the side wall of the groove is β, wherein in the embodiment, d4< d5, that is, the longitudinal section of the groove is an inverted trapezoid. For the cross section of the boss in the direction vertical to the surface of the chip body, the width of the end face of the boss contacting with the chip body is d2, the width of the end face of the boss far away from the chip body is d3, the height of the boss on the chip is h1, and the included angle formed by the end face of the boss far away from the chip body and the side wall of the boss is alpha, wherein d2 is less than d3, namely the longitudinal section of the boss is in a regular trapezoid shape; in addition, in this direction, the width of the chip body is d1, and the thickness of the chip body is h3 (if the chip body surface is formed with a protective layer, h3 includes the thickness of the protective layer). More specifically, in the present embodiment, in order to make the lands more easily fall into the grooves than the chip body, d1 may be larger than d3, so that d1> d3> d 2; in order to make the boss smoothly fall into the groove, d3 may be smaller than d4, so that d5> d4> d 3; to prevent the chip from inverting in the recess, d1 may be larger than d 4; in order to make the boss not easily escape from the groove, the included angle β may be smaller than the included angle α. Preferably, d1 is in the range of 1 μm to <1 mm; h1 is equal to h2 and h1 and h2 are at least less than 1/2d 1; to prevent the chip from falling into the groove in an incorrect posture, h3 may be larger than d 4; or h3 is at least less than 1/2d4, so that the chip can be moved to adjust to the correct posture after falling into the groove in an incorrect posture.
Fig. 3 is a schematic cross-sectional view of a groove accommodating a bump in a chip transfer device according to an embodiment of the invention. The advantages of the boss with a regular trapezoid longitudinal section and the groove with an inverted trapezoid longitudinal section will be described with reference to fig. 3. As shown in figure 3, after the lug on the chip falls into the groove, the positive trapezoidal boss and the inverted trapezoidal groove on the chip form a dovetail mortise-tenon structure, so that the lug can be effectively reduced to escape from the groove, and the chip transfer efficiency is improved.
Fig. 4 is a schematic cross-sectional view of a groove accommodating a bump in a chip transfer device according to another embodiment of the invention. In order to prevent the boss from moving too much in the groove after falling into the groove, in this embodiment, the bottom of the groove of the transfer substrate may be designed to turn back, that is, a side wall is additionally arranged on the side wall and the bottom surface of the inverted trapezoidal groove in fig. 1, and the included angle β formed by the additionally arranged side wall and the original bottom surface of the groove is opposite to the included angle β formed by the side wall of the groove.
FIG. 5a is a schematic plan view of a groove and a land and a top view of a chip electrode in an embodiment of the invention. FIG. 5b is a schematic plan view of grooves and lands and a top view of a chip electrode in another embodiment of the present invention. FIG. 5c is a schematic plan view of grooves and lands and a top view of a chip electrode in accordance with yet another embodiment of the present invention. The cross-sectional patterns of the lands and grooves are described below in conjunction with fig. 5 a-5 c.
Specifically, if the chip electrode is not available after rotating a certain angle within 360 °, the planar patterns of the lands and grooves should also be designed to be patterns that do not overlap with the original patterns after rotating a certain angle within 360 °, for example, as shown in the right side of fig. 5a, when the chip electrode is two circles with different diameters, as shown in the left side of fig. 5a, the cross sections of the lands and grooves may be trapezoidal. If the chip electrode is still usable after rotating a certain angle within 360 °, the planar patterns of the protrusion and the groove should also be designed to be coincident with the original pattern after rotating a certain angle within 360 °, for example, as shown in the right side of fig. 5b, when the planar pattern of the chip electrode is two small circles symmetrically distributed on both sides of a large circle, the chip electrode is identical to the original pattern after rotating 180 °, as shown in the left side of fig. 5b, the cross-section of the protrusion and the groove may be elliptical. If the planar pattern of the chip electrode is still usable after rotating by any angle within 360 °, the planar pattern of the lands and grooves may be designed into any shape without affecting the use of the chip electrode, for example, as shown in the right side of fig. 5c, the planar pattern of the chip electrode is ring-shaped, as shown in the left side of fig. 5c, and the cross-sections of the lands and grooves may be circular.
The chip transfer device of the invention, wherein the surface of the transfer substrate is provided with a plurality of grooves, each groove can only accommodate the lug boss of one chip, and the chip main body connected with the lug boss is lapped on the opening of the groove. When the chip is transferred by utilizing the transfer substrate, the position of the groove can be used as the position for placing the chip, the boss falls into the groove to randomly distribute the position of each chip, optical alignment is not needed, the efficiency of chip transfer can be improved, the influence of the phenomenon of uneven regionality of a chip source can be avoided, and in the boss and the chip main body, only the boss can fall into the groove, the problem of chip inversion when the chip is transferred can be effectively avoided, so that the chip transfer effect can be improved.
Further, the opening shape that sets up multiple recess and different types of recess on chip transfer device's the transfer base plate surface is different, and is corresponding, and multiple chip sets up the boss of different shapes on the surface, and a boss only corresponds a recess, utilizes this chip transfer device can shift multiple chip, and shifts efficiently and shift effectually.
Example two
This embodiment mainly describes a method for manufacturing a chip transfer apparatus, which can be used to manufacture the chip transfer apparatus according to the first embodiment.
The chip transfer device in this embodiment may be used for transferring a chip, the chip having a chip main body and a boss disposed on a side surface of the chip main body, the chip transfer device including a transfer substrate, the transfer substrate having a plurality of grooves disposed on a surface thereof, wherein each of the grooves is capable of accommodating only one boss of the chip, and the chip main body connected to the boss is made to overlap an opening of the groove.
In the present embodiment, the longitudinal sections of the lands and the grooves may be trapezoidal in a direction perpendicular to the surface of the chip main body and in a direction perpendicular to the surface of the transfer substrate. More specifically, for the longitudinal section of the groove, the opening width of the groove is smaller than the bottom surface width of the groove, i.e. the longitudinal section of the groove is in an inverted trapezoid shape.
Fig. 6a to 6d are schematic cross-sectional views illustrating steps of forming a groove on a transfer substrate according to an embodiment of the invention. The following describes a method for manufacturing the chip transfer device in this embodiment with reference to fig. 6a to 6 d. The manufacturing method of the chip transfer device can comprise the following steps:
s01: as shown in fig. 6a, providing a hard flat plate 201, forming a dielectric film 202 on a surface of one side of the hard flat plate 201, wherein the thickness of the dielectric film 202 is set according to the depth of the groove, and preferably, the thickness of the dielectric film may be equal to the depth of the groove;
s02: as shown in fig. 6b, a photoresist is coated on the surface of the dielectric film 202 and developed, and then the dielectric film is etched to form a bump, wherein the cross-sectional shape of the bump is the same as that of the groove;
s03: as shown in fig. 6c, the metal oxide 204 is filled between the bumps, and the metal oxide 204 is planarized to make the surface of the metal oxide flush with the surface of the bump;
s04: as shown in fig. 6d, the bump is etched away to form the groove 203.
In this embodiment, the transfer substrate may be a rigid flat plate. The filling material between the bumps may be a metal oxide, but in other embodiments, the metal oxide may be other material as long as the filling material is not affected when the dielectric film is removed.
Fig. 7a to 7f are schematic views illustrating a bump formed on a chip body according to an embodiment of the invention. With reference to fig. 7a to 7f, the present embodiment further provides a method for manufacturing a boss with a trapezoidal longitudinal section, where the method for manufacturing the boss may include:
s11: providing a semiconductor substrate, as shown in fig. 7a, forming a plurality of connected chips on the semiconductor substrate 100, wherein the semiconductor substrate 100 comprises a front surface and a back surface which are opposite to each other, the chips comprise chip electrodes 101, the chip electrodes 101 are exposed out of the front surface of the semiconductor substrate, and a protective layer 110 is formed on the front surface of the semiconductor substrate, and the protective layer 110 covers the surface of the semiconductor substrate between the chip electrodes and the chip electrodes;
s12: as shown in fig. 7b, a silicon oxide layer 130 is deposited on the back surface, and the thickness of the silicon oxide layer can be set according to the height of the boss;
s13: as shown in fig. 7c, a patterned mask layer is formed on the surface of the silicon oxide layer 130, the silicon oxide layer is etched by using the mask layer, an etching hole having the same shape as the boss is etched, and then the mask layer is removed;
s14: as shown in fig. 7d, the etching holes may be filled with metal oxide, and the metal oxide may be planarized such that the surface of the metal oxide is flush with the surface of the silicon oxide layer 130;
s15: as shown in fig. 7e, dicing is performed from the front side of the semiconductor substrate 100, the dicing stopping at the silicon oxide layer 130;
s16: as shown in fig. 7f, the remaining silicon oxide layer 130 is removed to form the mesas 120, resulting in the individual chips 103.
EXAMPLE III
The present embodiment mainly describes a chip transfer method, which can utilize the chip transfer apparatus described in the first embodiment. The chip transfer method of this embodiment makes the boss fall into the recess through shaking the sieve in, makes the chip seat is in on the transfer base plate, the rethread removes the batch transfer that the base plate can realize the chip, improves the efficiency that the chip shifted, simultaneously, shakes the sieve in-process, and the original position of each chip on the film source is disturbed, can effectively avoid the influence of the regional inhomogeneous phenomenon that the film source exists, can promote the transfer effect of chip.
The chip transfer method of the embodiment comprises the following steps:
the first step is as follows: placing a plurality of the chips on the surface of the transfer substrate;
the second step is as follows: and shaking the screen to enable the chip to move on the surface of the transfer substrate until at least part of the boss falls into the groove, and lapping a chip main body connected with the boss falling into the groove on an opening of the groove.
Specifically, in the second step, the chip may be moved in a direction parallel to the surface of the transfer substrate by shaking the sieve, and may also be moved up and down in a vertical direction of the surface of the transfer substrate. Wherein a movement amplitude of the chip in a direction parallel to the surface of the transfer substrate may be greater than a movement amplitude in a vertical direction of the surface of the transfer substrate.
In order to increase the freedom of movement of the chip on the surface of the transfer substrate, the chip transfer method of this embodiment may further include adding a horizontal auxiliary airflow on the surface of the transfer substrate in the step of performing the shaking. Increase supplementary air current at the shake sieve in-process, the motion degree of freedom of chip on the transfer substrate surface increases, and the position relation between each chip changes the increase, can further disturb the original position of each chip on the film source, can effectually avoid the influence of the regional inhomogeneous phenomenon of film source, promotes the effect that the chip shifts in batches. In addition, the degree of freedom of movement of the chip on the surface of the transfer substrate is increased, the probability that the lug boss on the surface of the chip falls into the groove on the transfer substrate can be increased, and the chip transfer efficiency is improved.
After the second step is finished, the chip transfer method may further include: the transfer substrate is tilted so that, among chips on the surface of the transfer substrate, chips whose bosses do not fall into the grooves slide off the surface of the transfer substrate, and all of the bosses which fall into the grooves are made to lean against the edge of the opening of the grooves in the same direction. FIG. 8 is a cross-sectional view illustrating the tilting of the transfer substrate according to an embodiment of the present invention. As shown in fig. 8, tilting the transfer substrate can make the chip whose boss does not fall into the groove slide off the surface of the transfer substrate; and before the chip electrode and the target substrate electrode are accurately aligned, inclining the transfer substrate again to enable all the bosses falling into the groove to lean against the opening edge of the groove along the same direction. The positioning of the chip on the transfer substrate is limited by the lug bosses on the chip and the grooves on the transfer substrate, when all the lug bosses lean against the opening edges of the grooves along the same direction, the positioning precision of the chip on the transfer substrate can be converted into the manufacturing precision of the lug bosses and the grooves, the lug bosses and the grooves can be manufactured by photoetching and etching technologies, and the precision of the lug bosses and the grooves can be controlled to be above a submicron level, so that the inclined transfer substrate can improve the precision of batch transfer of the chips.
In this embodiment, the chip transfer method may further include performing AOI scanning on the transfer substrate after the chip whose boss does not fall into the groove slides off the surface of the transfer substrate, and filling the groove that is not filled with the boss on the transfer substrate based on a result of the AOI scanning. In addition, AOI scanning is carried out on the transfer substrate, chips with incorrect seating modes on the transfer substrate can be found, and the chips with incorrect seating modes can be corrected. As the AOI inspection flow is added in the chip transfer process, the chips on the transfer substrate can be corrected and the grooves on the transfer substrate can be filled, so that the chip transfer precision can be improved, the chip batch transfer effect can be improved, and the quality of products obtained after chip transfer packaging can be improved.
In this embodiment, in order to know the real-time situation that the boss falls into the groove in the shaking screen process, a ccd (charge Coupled device) may be used to monitor the situation that the boss falls into the groove in real time. According to the real-time condition that the boss falls into the groove, the size of the horizontal auxiliary airflow can be adjusted, the amplitude of the sieve can be adjusted, the amplitude of the movement of the chip on the surface of the transfer substrate in all directions can be adjusted, the speed of the boss on the chip falling into the groove on the transfer substrate can be increased, and the chip transfer efficiency is improved.
In another embodiment of the present invention, there may be more than one chip to be transferred, and at this time, the chip transfer apparatus of the first embodiment may be used to transfer the chip, and the transfer substrate of the chip transfer apparatus is provided with grooves having different opening shapes. The chip transfer method of the present embodiment will be described below by taking three types of chips as an example.
In this embodiment, in order to transfer different types of chips, the following steps may be adopted:
s21: sorting the sizes of the bosses on the surfaces of the three chip main bodies in the direction in which the chip main bodies are lapped on the opening of the groove;
s22: placing the chip with the largest size on the surface of a transfer substrate, and shaking the screen to move the chip on the surface of the transfer substrate until at least part of the boss falls into the corresponding groove, wherein a chip main body connected with the boss falling into the groove is lapped on an opening of the groove;
s23: inclining the transfer substrate to enable the chips, of which the bosses do not fall into the grooves, to slide away from the surface of the transfer substrate;
s24: horizontally placing a transfer substrate, placing the chips with the second size sequence on the transfer substrate, and carrying out shaking screening until at least part of the bosses fall into the corresponding grooves;
s25: and then removing the chips of which the bosses on the surface of the transfer substrate do not fall into the grooves, placing the chips with the smallest sizes on the surface of the transfer substrate, and shaking the sieve to enable the bosses on the surface of the chips to fall into the grooves.
By the chip transfer method, batch transfer of various chips can be realized, the transfer efficiency is high, the transfer effect is good, and more particularly, the full-color function of the display screen can be realized.
Fig. 9a to 9g are schematic cross-sectional views illustrating a chip transfer process according to an embodiment of the invention. The following describes a process of chip transfer and bonding using the chip transfer method of the present embodiment with reference to fig. 9a to 9 g.
Specifically, the chip transferring and bonding by using the chip transferring method of the embodiment may include the following processes:
firstly, as shown in fig. 9a and 9b, a plurality of chips are placed on the surface of a transfer substrate, and then a sieve is shaken to move the chips on the surface of the transfer substrate until at least part of the bosses 120 fall into the grooves 203, and the chip main bodies connected with the bosses falling into the grooves are lapped on the openings of the grooves;
then, as shown in fig. 9c, the chip is transferred to the target area by using the transfer substrate, and before the chip electrode and the target substrate electrode are precisely aligned, the protective layer 110 on the chip surface is removed to expose the surface of the chip electrode 101;
then, as shown in fig. 9d, after removing the protective layer 110, the transfer substrate 200 carrying the chips is opposed to the target substrate, and the chip electrodes 101 on each chip are aligned with the target substrate electrodes 301;
next, as shown in fig. 9e and 9f, the chip electrode 101 and the target substrate electrode 301 are bonded, and the transfer substrate 200 is removed;
finally, as shown in fig. 9g, after removing the transfer substrate 200, the bumps 120 on the chip are etched away.
FIG. 10 shows the landing (Trapping) and landing (Trapping) of the bumps in the chip transfer device according to one embodiment of the present inventionSchematic representation of a probabilistic model. A probability number model for the lands falling into and out of the grooves is described below in connection with fig. 10. As shown in FIG. 10, the capture probability r of the groove capture chiptrap＝C1nvncProbability r of chip escaping from the recessdetrap＝C2n0Probability of final filling of the recess
Figure RE-GDA0002532282680000141
Wherein n isvIndicates the number of grooves, ncIndicates the number of chips, noNumber of chips dropped into the recess, C1Representing the capture probability constant, C2Denotes the escape probability constant, K denotes the capture probability constant C1And the escape probability constant C2The ratio of (a) to (b).
According to the final filling probability C of the groovefillThe following conclusions can be drawn:
(1) if the projection is required to fill the groove, i.e. CfillApproaching 1, then C is required1Numerical value as large as possible, C2Is close to 0;
(2) critical dimension such as d in the lands and grooves of the chip3、d4、h1、h2After the determination, whether the longitudinal section of the boss is in a regular trapezoid or not and whether the longitudinal section of the groove is in an inverted trapezoid or not, C1Are all substantially equivalent to CfillWithout influence, i.e. the longitudinal cross-sections of the lands and grooves have a particular shape pair CfillThe influence of (2) is small, and as long as the sizes of the grooves are reasonably designed, the bosses on the chip can fall into and fill the grooves, namely, the chip transfer method provided by the embodiment has feasibility;
(3) because the rocking sieve can produce tangential force, in the first embodiment, when the lug boss of regular trapezoid and the recess of inverted trapezoid escape from the recess, the unilateral dovetail mortise-tenon structure can be formed, the cooperation of rectangle lug boss and rectangle recess is used as the contrast example, the anti-pulling capacity of mortise-tenon structure is stronger than the rectangle straight tenon, therefore, the longitudinal section design of recess is for the longitudinal section design of inverted trapezoid and the lug boss for regular trapezoid can make C2More approaches 0, canThe boss escape probability is obviously reduced, and the final filling probability of the groove is improved.
The chip transfer method of the embodiment has the following advantages: on one hand, the chip bosses fall into the grooves through the shaking screen, and the chips are transferred by moving the transfer substrate, so that batch transfer of the chips can be realized, and the chip transfer efficiency is improved; on the other hand, the original positions of the chips on the chip source can be disordered through the shaking screen, the influence of the phenomenon of uneven regionality of the chip source can be effectively avoided, the chip transfer effect can be improved, in addition, horizontal auxiliary airflow is added to the surface of the transfer substrate during the shaking screen, the movement freedom degree of the chips can be increased during the shaking screen, the probability that the bosses fall into the grooves can be increased, the speed of falling the bosses into the grooves is accelerated, and the chip batch transfer efficiency is improved; on the other hand, the size of the lug boss on the chip and the size of the groove on the transfer substrate in all directions are limited, so that the chip cannot fall into the groove in an incorrect posture, the problem of inversion during chip transfer can be effectively solved, and the lug boss and the groove can be formed through an etching process, so that the manufacturing precision of the lug boss and the groove is high, the chip can be positioned on the transfer substrate in a high-precision mode, and the precision of batch transfer of the chip is improved.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the scope of the claims of the present invention, and any person skilled in the art can make possible the variations and modifications of the technical solutions of the present invention using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention, and therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention belong to the protection scope of the technical solutions of the present invention.

Claims (18)

1. The chip transfer device is used for transferring a chip, the chip is provided with a chip main body and a boss arranged on one side surface of the chip main body, the chip transfer device comprises a transfer substrate, and the surface of the transfer substrate is provided with a plurality of grooves;
wherein each of the recesses is capable of accommodating only one of the lands of the chip, and such that a chip body connected to the land is lapped over an opening of the recess.
2. The chip transfer apparatus of claim 1, wherein a maximum width of the boss is less than or equal to a minimum width of the groove, and the difference is within a set positional accuracy.
3. The chip transfer device according to claim 2, wherein an area of an orthographic projection of an opening of the recess on the bottom surface of the recess is smaller than an area of the bottom surface of the recess.
4. The chip transfer device according to claim 3, wherein the angle formed by the bottom surface of the groove and the side wall of the groove is smaller than or equal to the angle formed by the end surface of the boss far away from the chip body and the side wall of the boss.
5. The chip transfer device according to claim 2, wherein an area of an opening of the recess in an orthographic projection of the recess bottom surface is larger than an area of the recess bottom surface, and the recess bottom surface and the end surface of the projection received therein are equal in size at least in one direction.
6. The chip transfer apparatus of claim 1, wherein the depth of said recess is greater than or equal to the height of said mesa.
7. The chip transfer device according to claim 1, wherein the longitudinal section and the cross section of the boss and the groove are rectangular, trapezoidal, semicircular, semi-elliptical or a combination of two or more.
8. The chip transfer apparatus according to claim 1, wherein the width of the chip body in a direction in which the chip body overlaps the opening of the recess is 1 μm to 1 mm.
9. The chip transfer apparatus according to claim 1, wherein the thickness of the chip body in the height direction of the projection is larger than the maximum dimension between two points at the opening of the recess.
10. The chip transfer device according to claim 1, wherein in a height direction of said bosses, a thickness of said chip body is at least smaller than 1/2 a maximum dimension of an opening of said recess in one direction, and a sum of the height of said bosses and the thickness of said chip body is larger than the maximum dimension of the opening of said recess in said direction.
11. The chip transfer device according to any one of claims 1 to 10, wherein the transfer substrate surface is provided with at least two kinds of grooves, and the opening shapes of the different kinds of grooves are different.
12. The chip transfer device according to any one of claims 1 to 10, wherein the chip is a micro LED chip.
13. A chip transfer method using the chip transfer apparatus according to any one of claims 1 to 12, comprising:
placing a plurality of the chips on the surface of the transfer substrate; and
and shaking the screen to enable the chip to move on the surface of the transfer substrate until at least part of the boss falls into the groove, and lapping a chip main body connected with the boss falling into the groove on an opening of the groove.
14. The chip transfer method according to claim 13, wherein in the step of performing a shaker, the chip is moved in a direction parallel to the surface of the transfer substrate and moved up and down in a vertical direction of the surface of the transfer substrate.
15. The chip transfer method according to claim 14, wherein a magnitude of movement of the chip in a direction parallel to the surface of the transfer substrate is larger than a magnitude of movement in a vertical direction of the surface of the transfer substrate.
16. The chip transfer method according to claim 13, wherein in the step of performing a shaker, a horizontal auxiliary air flow is added to the surface of the transfer substrate.
17. The chip transfer method of claim 13, further comprising, after the shaking is completed:
and inclining the transfer substrate, so that the chip, of which the boss does not fall into the groove, among the chips on the surface of the transfer substrate slides away from the surface of the transfer substrate, and all the bosses falling into the groove lean against the opening edge of the groove along the same direction.
18. The chip transfer method according to claim 17, further comprising, after the chip whose lands do not fall into the grooves slides off the transfer substrate surface:
performing AOI scanning on the transfer substrate; and
and filling the grooves which are not filled with the bosses on the transfer substrate based on the AOI scanning result.
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