CN113308086A - Resin molded article for optical semiconductor encapsulation, optical semiconductor encapsulating material, and optical semiconductor device - Google Patents

Resin molded article for optical semiconductor encapsulation, optical semiconductor encapsulating material, and optical semiconductor device Download PDF

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Publication number
CN113308086A
CN113308086A CN202011595900.7A CN202011595900A CN113308086A CN 113308086 A CN113308086 A CN 113308086A CN 202011595900 A CN202011595900 A CN 202011595900A CN 113308086 A CN113308086 A CN 113308086A
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optical semiconductor
less
resin
encapsulating
molding
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Inventor
藤井宏中
山根实
松尾晓
大田真也
姫野直子
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Nitto Denko Corp
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Nitto Denko Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/10—Materials in mouldable or extrudable form for sealing or packing joints or covers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets
    • C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/10—Materials in mouldable or extrudable form for sealing or packing joints or covers
    • C09K2003/1034—Materials or components characterised by specific properties
    • C09K2003/1059—Heat-curable materials

Abstract

The invention relates to a resin molding for optical semiconductor encapsulation, an optical semiconductor encapsulation material and an optical semiconductor device. The invention provides a resin molding for optical semiconductor encapsulation which is not easy to generate cracking and generate gaps during molding, and an optical semiconductor encapsulation material and an optical semiconductor device which are obtained by using the resin molding for optical semiconductor encapsulation. A resin molding for optical semiconductor encapsulation, which is used for an optical semiconductor encapsulating material having a thinnest portion with a thickness of 300 [ mu ] m or less, wherein the compressibility of the resin molding for optical semiconductor encapsulation is 90% or more, and the proportion of particles having a particle diameter of 125 [ mu ] m or less in the resin molding for optical semiconductor encapsulation is 15% or less.

Description

Resin molded article for optical semiconductor encapsulation, optical semiconductor encapsulating material, and optical semiconductor device
Technical Field
The invention relates to a resin molding for optical semiconductor encapsulation, an optical semiconductor encapsulation material and an optical semiconductor device.
Background
The optical semiconductor element is packaged by a ceramic package or a plastic package to produce a device. Here, since ceramic packages are relatively expensive in constituent materials and poor in mass productivity, the use of plastic packages has become the mainstream. Among them, from the viewpoint of workability, mass productivity and reliability, a technique of preforming an epoxy resin composition into small pieces (タブレット) in advance and then transfer molding the obtained molded article has become the mainstream.
Incidentally, in an epoxy resin composition for encapsulating an optical semiconductor used for plastic encapsulation, since it is relatively difficult to disperse the respective components of an epoxy resin, a curing agent and a curing accelerator and to uniformly mix and disperse the whole, there is a problem that a curing reaction becomes non-uniform and molding unevenness and molding voids are easily generated. There is a problem that optical unevenness occurs due to these unevenness and voids, and the reliability of the optical semiconductor device is impaired.
In order to solve these problems, patent document 1 discloses a technique of using a substance obtained by finely pulverizing an epoxy resin composition into small pieces, thereby securing uniform dispersibility of the composition, reducing molding unevenness and molding voids, and eliminating optical unevenness.
Documents of the prior art
Patent document
[ patent document 1] Japanese patent application laid-open No. 3-3258
Disclosure of Invention
Problems to be solved by the invention
In recent years, with the miniaturization of optical semiconductor devices, thinning of a packaging material for packaging an optical semiconductor element has been desired, and it has been necessary to suppress the generation of voids during molding more than ever. Further, the conventional resin pellet for encapsulating an optical semiconductor containing a large amount of fine powder has a problem that breakage is likely to occur.
The purpose of the present invention is to provide a resin molded product for optical semiconductor encapsulation that is less likely to crack and that is less likely to generate voids during molding, and to provide an optical semiconductor encapsulating material and an optical semiconductor device that are obtained using the resin molded product for optical semiconductor encapsulation.
Means for solving the problems
The present invention relates to a resin molding for optical semiconductor encapsulation, wherein the resin molding for optical semiconductor encapsulation is used for an optical semiconductor encapsulation material having a thickness of 300 [ mu ] m or less at the thinnest part, the compressibility of the resin molding for optical semiconductor encapsulation is 90% or more, and the proportion of particles having a particle diameter of 125 [ mu ] m or less in the resin molding for optical semiconductor encapsulation is 15% or less.
In the molded resin for encapsulating an optical semiconductor, the proportion of particles having a particle diameter of 2000 μm or more is preferably 10% or less.
The resin molded product for optical semiconductor encapsulation preferably comprises a curable resin composition containing a thermosetting resin, a curing agent and a curing accelerator.
The tablet (fudge) hardness of the molded resin for encapsulating an optical semiconductor is preferably 75N or more.
The present invention also relates to an optical semiconductor sealing material obtained by molding the molded product, wherein the thinnest part of the optical semiconductor sealing material has a thickness of 300 μm or less.
The present invention also relates to an optical semiconductor device comprising an optical semiconductor element and the optical semiconductor encapsulating material for encapsulating the optical semiconductor element.
Effects of the invention
The resin composition for encapsulating an optical semiconductor of the present invention is less likely to generate voids even when molded to be thin, and can provide an optical semiconductor encapsulating material having excellent optical characteristics. Further, the resin molded product for optical semiconductor encapsulation of the present invention is less likely to crack.
Detailed Description
The present invention will be specifically described below.
The resin molding for encapsulating an optical semiconductor (e.g., a pellet or a sheet) of the present invention is used for an optical semiconductor encapsulating material in which the thinnest part of the encapsulating portion of a semiconductor device has a thickness of 300 [ mu ] m or less, the compressibility of the resin molding for encapsulating an optical semiconductor is 90% or more, and the proportion of particles having a particle diameter of 125 [ mu ] m or less in the resin molding for encapsulating an optical semiconductor is 15% or less. In such a thin package material, voids generated during molding of the semiconductor package material may have a large influence on optical characteristics. The molded article of the present invention is suitable for molding the above-mentioned thin optical semiconductor encapsulating material because voids are not easily generated at the time of molding.
In this specification, an optical semiconductor encapsulating material is a member for forming and encapsulating an optical semiconductor element constituting an optical semiconductor device so as to cover the element.
The thinnest part of the optical semiconductor sealing material to which the resin molding for optical semiconductor sealing of the present invention is applied has a thickness of 300 μm or less, preferably 250 μm or less, and more preferably 200 μm or less.
The resin molding for encapsulating an optical semiconductor of the present invention has a compressibility of 90% or more. When the compressibility is 90% or more, generation of voids during molding can be suppressed. The compression ratio is preferably 91% or more, and more preferably 92% or more, from the viewpoint of further suppressing the occurrence of voids. The upper limit of the compressibility is not particularly limited, but is preferably 96% or less.
The compression ratio may be determined as a value obtained by multiplying 100 by the ratio (apparent specific gravity/true specific gravity) of the apparent specific gravity of the molded product to the specific gravity (true specific gravity) when the voids in the molded product are set to 0. As the true specific gravity, the specific gravity of a cured product obtained by curing the molded product (under the conditions of 150 ℃. times.4 minutes) with a transfer molding machine under pressure can be used.
In the molded resin for encapsulating an optical semiconductor of the present invention, the proportion of particles having a particle diameter of 125 μm or less is 15% or less. Since the proportion of particles having a particle diameter of 125 μm or less is 15% or less, the occurrence of voids during molding can be suppressed, and the occurrence of cracks in the molded article becomes difficult. The proportion of the particles having a particle diameter of 125 μm or less is preferably 12% or less, more preferably 10% or less, from the viewpoint that the occurrence of voids can be further suppressed and the occurrence of cracks in the molded product becomes less likely. The lower limit is not particularly limited, and may be 0.1%.
In the molded resin product for encapsulating an optical semiconductor of the present invention, the proportion of particles having a particle diameter of 2000 μm or more is preferably 10% or less, more preferably 4% or less. The lower limit is not particularly limited, and may be 0.1%. When the proportion of the particles having a particle diameter of 2000 μm or more is within the above range, the generation of voids during molding can be further suppressed. Further, the optical unevenness of the sealing material and the clogging of the mold can be suppressed, and small pieces with small weight variation (バラツキ) can be obtained.
The average particle diameter of the particles constituting the molded resin product for encapsulating an optical semiconductor of the present invention is preferably 125 to 2000. mu.m, more preferably 500 to 1000. mu.m.
The proportion of particles having a particle diameter of 125 μm or less, the proportion of particles having a particle diameter of 2000 μm or more, and the average particle diameter can be determined from a particle size distribution based on the number measured by using a laser diffraction type particle size distribution measuring apparatus.
In the molded resin product for encapsulating an optical semiconductor of the present invention, the tablet hardness is preferably 75N or more, and more preferably 125N or more. The upper limit of the hardness of the tablet is not particularly limited, but is preferably 330N or less. When the tablet hardness is within the above range, the occurrence of voids during molding can be further suppressed. Further, optical unevenness of the sealing material and clogging of the mold can be suppressed. Further, a molded article with less weight variation can be obtained.
Here, the tablet hardness can be measured by using a tablet hardness tester (manufactured by okada seiki co., ltd.) using a tablet having a diameter of 13mm and a weight of 2.4 g.
The volume of the resin molding for encapsulating an optical semiconductor of the present invention is not particularly limited, but is preferably 1cm3～100cm3More preferably 10cm3～100cm3。
The resin molded product for optical semiconductor encapsulation of the present invention preferably comprises a curable resin composition containing a thermosetting resin, a curing agent and a curing accelerator. The filler such as silica powder may be blended to such an extent that the light transmission is not impaired.
As the thermosetting resin, there can be mentioned: epoxy resins, silicone resins, hybrid epoxy/silicone resins, and the like. Among them, epoxy resins are preferable.
As the epoxy resin, an epoxy resin which is less colored is preferable, and examples thereof include: bisphenol a type epoxy resin; bisphenol F type epoxy resins; phenol novolac type epoxy resin; a cycloaliphatic epoxy resin; heterocyclic ring-containing epoxy resins such as triglycidyl isocyanurate and hydantoin epoxy resins; hydrogenated bisphenol a type epoxy resin; aliphatic epoxy resins; glycidyl ether type epoxy resins, and the like. These may be used alone or in combination of two or more.
The curing agent is not particularly limited, but acid anhydrides which hardly color a cured body of the resin composition at the time of curing or after curing are preferred. Examples thereof include: phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylnadic anhydride, nadic anhydride, glutaric anhydride, and the like. Further, as other curing agents, there may be mentioned: examples of the amine-based curing agents include m-phenylenediamine, dimethyldiphenylmethane, diaminodiphenylsulfone, m-xylylenediamine, tetraethylenepentamine, diethylamine, and propylamine, and phenol-based curing agents. These may be used alone or in combination of two or more.
The amount of the curing agent is not particularly limited, and is, for example, preferably 20 to 200 parts by mass, more preferably 20 to 80 parts by mass, and still more preferably 40 to 60 parts by mass, based on 100 parts by mass of the thermosetting resin. When the amount is less than 20 parts by mass, the curing rate is lowered, and when the amount is more than 200 parts by mass, the amount is excessive for the curing reaction, and thus the properties may be deteriorated.
Examples of the curing accelerator include: tertiary amines such as triethanolamine; 2-methylimidazoleImidazoles and the like; tetraphenyl radical
Figure BDA0002867992470000061
Organic phosphorus compounds such as tetraphenylborate and triphenylphosphine; 1, 8-diazabicyclo [5.4.0 ]]Undec-7-ene, 1, 5-diazabicyclo [4.3.0]Diazabicyclo-olefin compounds such as non-5-ene. These may be used alone or in combination of two or more.
The amount of the curing accelerator to be blended is not particularly limited, and may be appropriately selected from the range of, for example, 0.1 to 5 parts by mass, preferably 0.5 to 3 parts by mass, and more preferably 1 to 2 parts by mass, per 100 parts by mass of the thermosetting resin. When the amount of the curing accelerator is too small, the curing rate becomes slow, and the productivity is lowered, while when the amount of the curing accelerator is too large, the curing reaction rate becomes fast, and it is difficult to control the reaction state, and there is a possibility that the reaction fluctuates (ばらつき).
In the resin molded product for encapsulating an optical semiconductor of the present invention, additives such as a coloring inhibitor, a lubricant, a modifier, a deterioration inhibitor, a release agent, a phosphor for changing the wavelength of light, and an inorganic/organic filler for diffusing light may be used as necessary in addition to the above components.
Examples of the stainblocker include phenol compounds, amine compounds, organic sulfur compounds, phosphine compounds and the like.
Examples of the lubricant include waxes such as stearic acid, magnesium stearate, and calcium stearate, and talc. When the lubricant is blended, the blending amount is appropriately set according to the tableting molding conditions, and is preferably set to 0.1 to 0.4 mass% of the entire resin composition, for example.
Examples of the phosphor that changes the wavelength of light and the inorganic/organic filler that diffuses light include silica powders such as quartz glass powder, talc, fused silica powder, and crystalline silica powder, alumina, silicon nitride, aluminum nitride, and silicon carbide. When the phosphor and the inorganic/organic filler are blended, the blending amount thereof can be appropriately set according to the tablet molding conditions. Specifically, in the case of the fluorescent material, the amount of the fluorescent material to be blended may be appropriately set from the range of 1% by mass to 60% by mass of the entire resin composition. On the other hand, in the case of the filler (organic/inorganic) for scattering light, the filler for scattering light may be appropriately set from the range of 0.5 to 25% by mass of the entire resin composition.
The resin molded product for optical semiconductor encapsulation of the present invention is used for resin encapsulation of an optical semiconductor element such as a light receiving element, and therefore a transparent resin molded product is preferable from the optical viewpoint. Here, "transparent" means that the transmittance at 400nm of a cured product of the curable resin composition constituting the small block is 90% or more. The transmittance in the case where the above-described fluorescent material that changes the wavelength of light, the inorganic/organic filler that diffuses light, the colorant, and other additives are contained means the transmittance of the resin portion after the additives are removed.
The resin molded product for optical semiconductor encapsulation of the present invention can be suitably produced, for example, by a production method comprising the steps of:
a step of kneading a thermosetting resin, a curing agent, and a curing accelerator to obtain a curable resin composition;
a step of heat-treating the curable resin composition;
a step for obtaining a granular curable resin composition by granulating the curable resin composition; and
and a step of tabletting and molding the granular curable resin composition into a small block.
The method of kneading is not particularly limited, and examples thereof include a method using an extruder. The kneading temperature is not particularly limited, and may be appropriately changed depending on the properties of the thermosetting resin, or may be set high so that the reaction proceeds during kneading. Specifically, the temperature is preferably 80 to 150 ℃ and more preferably 110 to 130 ℃.
The shape of the curable resin composition obtained by kneading is not particularly limited, and examples thereof include a film, a sheet, a pellet, and a block.
The thickness of the curable resin composition obtained by kneading is not particularly limited, but is preferably 1mm to 30mm, more preferably 2mm to 20 mm. When the thickness is less than 1mm, the thickness is thin and is easily affected by moisture absorption, and when the thickness exceeds 30mm, time is required until cooling, and the reaction tends to fluctuate due to internal heat storage.
The curable resin composition obtained by kneading is subjected to a heat treatment to obtain a B-stage (semi-cured) resin composition for encapsulating an optical semiconductor. The heat treatment temperature is not particularly limited, but is preferably 25 to 100 ℃ and more preferably 60 to 80 ℃. When the temperature is less than 25 ℃, the curing reaction is slow, and the productivity tends to be low, and when the temperature is more than 100 ℃, the curing reaction is fast, and it tends to be difficult to complete the reaction in a predetermined reaction state. The heat treatment time is not particularly limited, and may be appropriately changed according to the properties of the thermosetting resin.
The heat-treated resin composition was pelletized to obtain a pellet-shaped curable resin composition. The granulation method includes a method using a dry-type crushing granulator, a method using a dry-type compression granulator, and the like, and among them, a method using a dry-type crushing granulator is preferable. The dry crushing granulation method may be an impact rotation method, a shear oscillation method, a shear rotation method, or the like, and a shear oscillation method is preferred. Before the granulation, the powder may be pulverized by using a ball mill, a turbine mill, or the like. Further, the particle size may be adjusted by sieving particles obtained by pulverization or granulation. By these methods, the proportion of particles having a particle diameter of 125 μm or less, the proportion of particles having a particle diameter of 2000 μm or more, and the average particle diameter can be adjusted to the above-mentioned ranges.
The obtained granular curable resin composition is, for example, tableted and molded into small pieces to obtain the molded resin product for encapsulating an optical semiconductor of the present invention. Since the particle size is adjusted by the granulation, high-quality small pieces with less chipping and cracking and less weight variation can be obtained. The tablet-forming is performed in such a manner that the compression ratio of the formed product is within the above range.
The resin molding for encapsulating an optical semiconductor of the present invention can encapsulate an optical semiconductor element by a molding method such as transfer molding. The optical semiconductor sealing material of the present invention is also one of the present invention, which is obtained by molding the resin molding for optical semiconductor sealing of the present invention and has a thinnest part having a thickness of 300 μm or less. The optical semiconductor sealing material of the present invention is obtained from the molded product of the present invention, and therefore, although it is an optical semiconductor having a thin portion with a thickness of 300 μm or less at the thinnest portion, it has few defects such as voids and optical unevenness.
Examples of the optical semiconductor element include a Light Emitting Diode (LED), a semiconductor laser (VCSEL or the like) element, and a light receiving element.
An optical semiconductor device having an optical semiconductor element and the optical semiconductor encapsulating material of the present invention encapsulating the optical semiconductor element is also one aspect of the present invention. Since the optical semiconductor device of the present invention includes the optical semiconductor package of the present invention, when the optical semiconductor device is operated to obtain a light-receiving signal, there is an advantage that a signal free from noise can be obtained without generating signal fluctuation due to optical unevenness.
[ examples ]
The present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.
The materials used are shown below.
Epoxy resin 1: bisphenol type epoxy resin A (epoxy equivalent 650)
Epoxy resin 2: triglycidyl isocyanurate (epoxy equivalent 100)
Curing agent 1: tetrahydrophthalic anhydride
Curing agent 2: mixture of 4-methylhexahydrophthalic anhydride and hexahydrophthalic anhydride cure accelerator 1: n, N-dimethylbenzylamine
Curing accelerator 2: methyl tributyl radical
Figure BDA0002867992470000091
Phosphoric acid dimethyl ester salt
Additive: alcohol modifier
Examples 1 to 4 and comparative examples 1 to 3
The raw materials were melted and mixed by heating in an extruder set at 130 ℃ in the blending amounts shown in table 1, and the resin discharged from the discharge port of the extruder was molded to a thickness of 2mm to 10mm, and heat-treated at 60 ℃ for 60 minutes to obtain an epoxy resin composition. The obtained epoxy resin composition was pelletized by a dry compression pelletizer, then ground by a turbine, and then the ratio of fine powder having a particle size of 125 μm or less and large particles having a particle size of 2000 μm or more was adjusted as shown in table 1 by using a 120-mesh sieve and a 10-mesh sieve. Then, the obtained powder was tableted using a rotary tablet press to form pellets of 13mm in diameter and 2.4g in weight, thereby producing resin tablets for encapsulating an optical semiconductor having a compression ratio shown in Table 1.
Using the obtained tablets, the tabletting property, tablet hardness and voids were evaluated by the following methods. The results are shown in Table 1.
< tableting Property >
The presence or absence of cracking of the small pieces was visually observed, and evaluated according to the following criteria.
O: breaking of small pieces
And (delta): partial fracture
X: without cracking
Tablet hardness of tabletted Material
The hardness when a pressure for causing fracture was applied in the radial direction was measured using a tablet hardness tester (manufactured by Ooka Seiki K.K.) using a small block of 13. phi. times.2.4 g. The evaluation was performed under the condition that the humidity was 50% or less so that the humidity did not affect the cohesive force of the evaluation object. In the tables, "-" means that evaluation was impossible.
< voids >
The obtained small resin block for optical semiconductor encapsulation was transfer-molded using a lens molding die having a thickness of the thinnest portion of 300 μm and a lens height of 1mm, thereby producing an optical semiconductor encapsulating material. The obtained sealing material was observed with a microscope having a magnification of 1000 times, and the number of frames forming 600 lenses was 20, and the number of voids/the number of lenses (600 × 20 frames) was determined, and evaluated according to the following criteria.
O: less than 0.5ppm
△：0.5ppm～200ppm
X: greater than 200ppm
-: since the small pieces could not be produced, evaluation was impossible.
Examples 5 to 8 and comparative examples 4 to 6
Resin tablets for optical semiconductor encapsulation were produced in the same manner as in examples 1 to 4 and comparative examples 1 to 3, except that the raw materials were used in the amounts shown in table 2. Using the obtained tablets, the tabletting property, tablet hardness and voids were evaluated by the above-mentioned methods. The results are shown in Table 2.
TABLE 1
Figure BDA0002867992470000111
TABLE 2
Figure BDA0002867992470000112

Claims (6)

1. A resin molding for optical semiconductor encapsulation, which is used for an optical semiconductor encapsulating material having a thinnest part with a thickness of 300 [ mu ] m or less,
the resin molding for encapsulating an optical semiconductor has a compressibility of 90% or more and
the proportion of particles having a particle diameter of 125 [ mu ] m or less in the molded resin for encapsulating an optical semiconductor is 15% or less.
2. A molded resin article for optical semiconductor encapsulation according to claim 1, wherein the proportion of particles having a particle diameter of 2000 μm or more in the molded resin article for optical semiconductor encapsulation is 10% or less.
3. The shaped resin product for optical semiconductor encapsulation according to claim 1 or 2, wherein the shaped resin product for optical semiconductor encapsulation comprises a curable resin composition containing a thermosetting resin, a curing agent, and a curing accelerator.
4. The shaped resin product for encapsulating an optical semiconductor according to any one of claims 1 to 3, wherein the tablet hardness of the shaped resin product for encapsulating an optical semiconductor is 75N or more.
5. An optical semiconductor sealing material obtained by molding the resin molding for optical semiconductor sealing according to any one of claims 1 to 4, wherein the thinnest part of the optical semiconductor sealing material has a thickness of 300 μm or less.
6. An optical semiconductor device comprising an optical semiconductor element and the optical semiconductor encapsulating material according to claim 5 encapsulating the optical semiconductor element.
CN202011595900.7A 2020-02-27 2020-12-29 Resin molded article for optical semiconductor encapsulation, optical semiconductor encapsulating material, and optical semiconductor device Pending CN113308086A (en)

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JP2020031501 2020-02-27

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