CN113307643A - 一种基于单向带SiCf/SiC复合材料制备方法 - Google Patents
一种基于单向带SiCf/SiC复合材料制备方法 Download PDFInfo
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Abstract
本发明涉及一种基于单向带SiCf/SiC复合材料制备方法。首先将单向SiC纤维带制备成带界面层的预浸料,通过热压定型方法,将若干层单向SiC纤维预浸料制备成SiCf/SiC‑C多孔成型体,然后通过高温熔渗,制备出致密SiCf/SiC复合材料。本发明通过采用热熔纱‑单向SiC纤维带进行预浸料‑熔渗工艺研究,避免了SiC纤维在预制体编织过程中卷曲所带来的纤维损伤;通过制备专用预浸浆料组分,解决了热熔纱高温分解导致纤维松散难以成型的问题;本发明方法制备的复合材料在相同厚度下,相比传统平纹布铺层具有更低的纤维含量,降低了复合材料制备的成本,具有工程化的应用前景。
Description
技术领域
本发明涉及复合材料制备技术领域,特别是涉及一种基于单向带SiCf/SiC复合材料制备方法。
背景技术
SiCf/SiC复合材料作为陶瓷基复合材料的典型代表,具有高强高模、低密及高温抗氧化等优异性能,是航空航天领域热端构件的潜在应用材料之一。相较于先驱体浸渍裂解(PIP)和化学气相沉积(CVI),用熔渗工艺(MI)制备SiCf/SiC复合材料具有成本低,周期短,致密度高,孔隙率低等特点。预浸料-熔渗工艺是一种基于熔渗工艺开发出来的新型工艺,其流程为单丝束SiC纤维通过连续丝束界面沉积炉制备界面层,经过预浸机料槽挂上浆料,通过湿滚缠绕法制备出预浸料的单向SiC纤维带,然后叠层热压形成SiCf/SiC复合材料的多孔坯体,最后通过熔融渗硅进行致密化。由于复合材料是单向纤维带铺层而来,纤维不存在卷曲、弯折等问题,使得复合材料在纤维方向上的力学性能较优异。近几年,我国已开始开展预浸料-熔渗工艺制备陶瓷基复合材料的相关研究。专利201810268751.X介绍了一种基于预浸料SiC纤维二维布的SiCf/SiC复合材料熔渗制备技术。该方法以SiC纤维作为增强体,首先在SiC纤维二维布表面制备界面层,进而通过PCS前驱体浸渍裂解法进行预制体定型、再通过熔融渗硅的方法实现材料的致密化,制备出SiCf/SiC复合材料。专利201910663654.5和专利201910618382.7均介绍了一种基于预浸料-熔渗的技术,该方法均是将浆料涂覆在SiC纤维二维布上,常温晾干得到纤维预浸料,然后通过铺层、热压、碳化以及熔渗制备成SiCf/SiC复合材料。
可以发现,目前主流的研究方向是利用SiC纤维二维布研究预浸料-熔渗工艺中的后续步骤,如铺层成型,熔渗等。这是由于现有的技术以及设备均处于空白状态,无法对连续SiC单丝束纤维沉积界面层以及制备成单向带。SiC纤维二维布由于经、纬两向纤维的交叉缠绕,会损耗SiC纤维的力学性能,影响最终复合材料的性能;同时经纬纤维交叉节点的位置易产生孔隙等缺陷,影响复合材料整体致密度。研究基于单向SiC纤维带的预浸料-熔渗工艺是必然趋势。
因此,发明人提供了一种基于单向带SiCf/SiC复合材料制备方法。
发明内容
(1)要解决的技术问题
本发明实施例提供了一种基于单向带SiCf/SiC复合材料制备方法,解决了现有技术制备的SiCf/SiC复合材料在预制体编织过程中因卷曲所带来的纤维损伤,导致纤维方向上力学性能较差,同时经纬纤维交叉节点的位置易产生孔隙等缺陷,影响复合材料整体致密的问题。
(2)技术方案
本发明的实施例提出了一种基于单向带SiCf/SiC复合材料制备方法,包括以下步骤S110~步骤S160:
步骤S110,制备界面相:用模具将单层的热熔纱-单向SiC纤维带夹好,放入界面层沉积炉中,制备氮化硼界面相。
步骤S120,制备预浸浆料:用SiC粉体、有机碳源以及有机溶剂按3:5:2的比例配置预浸浆料,经球磨6h~48h后得到混合均匀的预浸浆料。
步骤S130,制备单向SiC纤维预浸料:将步骤S110中带模具的含有氮化硼界面相的单向SiC纤维带放入真空容器中浸渍,先抽真空,后灌入步骤S120制备的预浸浆料,保压4h~12h后取出,放入烘箱烘干后,脱模得到单向SiC纤维预浸料。
步骤S140,叠层热压成型:将5~20层步骤S130得到的单向SiC纤维预浸料带的两面涂刷粘接剂,并按照纤维布的方向铺叠,通过热压工艺固化成型得到多孔成型体。
步骤S150,高温裂解:将步骤S140得到的多孔成型体放置于高温裂解炉中进行裂解,自然冷却后得到SiCf/SiC-C多孔体。
步骤S160,高温熔渗:将步骤S150得到的SiCf/SiC-C多孔体放入熔渗炉中,并用Si粉包埋进行高温熔渗,自然冷却后,得到致密SiCf/SiC复合材料。
进一步地,所述步骤S110中,所述热熔纱-单向SiC纤维带的经向是SiC纤维,纬向是热熔纱,织物组织为平纹。
进一步地,所述步骤S110中,所述氮化硼界面相的厚度为100nm~500nm。
进一步地,所述步骤S120中,所述有机碳源为呋喃树脂、糠酮树脂、酚醛树脂中的至少一种,所述有机溶剂为乙醇或丙酮。
进一步地,所述步骤S130中,放入烘箱烘干的条件为:加热至160℃~240℃,保温2h~24h。
进一步地,所述步骤S140中,所述粘接剂为呋喃树脂、酚醛树脂、液态聚碳硅烷中的一种。
进一步地,所述步骤S140中,通过热压工艺固化成型的条件是:以5℃/min~10℃/min的升温速率从室温加热到160℃~240℃,压力为2MPa~4MPa,保温0.5小时~2小时。
进一步地,所述步骤S150中,高温裂解炉中进行裂解的条件为:以100℃/h~600℃/h的升温速率从室温加热到800℃~1200℃,保温0.5h~2h,压力为真空。
进一步地,所述步骤S150中,放入熔渗炉中进行高温熔渗的条件为:以100℃/h~600℃/h的升温速率从室温加热到1410℃~1500℃,保温1小时~4小时,压力为真空。
(3)有益效果
首先,本发明利用了热熔纱高温分解的特点,热熔纱在复合材料界面层沉积升温过程中就能完全分解,不影响后续工艺且不引入杂质,使得SiC纤维单向地保留在复合材料中,达到单向SiC纤维带作为增强体的效果。
其次,由于热熔纱-单向SiC纤维带在制备界面层后,热熔纱分解,单向SiC纤维之间不存在结合力,会分散,进而影响后续成型工艺。本发明通过设计专用的浆料组分,使得分散的SiC纤维在预浸料后可以通过浆料基体进行固定,脱模后纤维不松散,确保后续热压成型工艺的可行性。
最后,相比于传统的SiC纤维二维布,本发明基于热熔纱-单向SiC纤维带制备的复合材料具有更低的纤维体积分数,降低了SiCf/SiC复合材料的制备成本,采用本发明方法制备的SiCf/SiC复合材料力学性能较好,整体致密性更好。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对本发明实施例中所需要使用的附图作简单地介绍,显而易见地,下面所描述的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本发明实施例的一种基于单向带SiCf/SiC复合材料制备方法的工艺流程图。
具体实施方式
下面结合附图和实施例对本发明的实施方式作进一步详细描述。以下实施例的详细描述和附图用于示例性地说明本发明的原理,但不能用来限制本发明的范围,即本发明不限于所描述的实施例,在不脱离本发明的精神的前提下覆盖了设备和操作方式的任何修改、替换和改进。
需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。下面将参照附图并结合实施例来详细说明本申请。
实施例1
请参照图1所示,本发明提供了一种基于单向带SiCf/SiC复合材料制备方法,该制备方法包括以下步骤S110~步骤S160:
步骤S110,制备界面相:用模具将单层的热熔纱-单向SiC纤维带夹好,放入界面层沉积炉中,制备氮化硼(BN)界面相,所述氮化硼界面相的厚度为200nm。
在该步骤中,热熔纱-单向SiC纤维带的经向采用了国产SiC纤维,纬向是热熔纱,织物组织为平纹。
步骤S120,制备预浸浆料:用30份的SiC粉体、50份的有机碳源以及20份的有机溶剂配置预浸浆料,经球磨24h后得到混合均匀的预浸浆料。本实施例中,有机碳源采用呋喃树脂,有机溶剂采用丙酮。
步骤S130,制备单向SiC纤维预浸料:将步骤S110中带模具的含有氮化硼界面相的单向SiC纤维带放入真空容器中浸渍,先抽真空,后灌入步骤S120制备的预浸浆料,保压10h后取出,放入烘箱,加热至200℃,保温4h,烘干后,脱模得到单向SiC纤维预浸料。
步骤S140,叠层热压成型:将10层步骤S130得到的单向SiC纤维预浸料带的两面涂刷粘接剂,并按照纤维布的方向[0°-90°-0°-90°](即按照第一层纤维带沿长度为横向铺叠,下一层纤维带沿长度为纵向铺叠,相邻两层纤维带是交叉方向铺叠)的顺序铺叠,以10℃/min的升温速率从室温加热到200℃,压力为3MPa,保温2小时,通过热压工艺固化成型得到多孔成型体。本实施例中的粘接剂采用呋喃树脂。
步骤S150,高温裂解:将步骤S140得到的多孔成型体放置于高温裂解炉中进行真空裂解,以300℃/h的升温速率从室温加热到1200℃,保温1h,自然冷却后得到SiCf/SiC-C多孔体。
步骤S160,高温熔渗:将步骤S150得到的SiCf/SiC-C多孔体放入熔渗炉中,并用Si粉包埋,以300℃/h的升温速率从室温加热到1450℃,保温2小时,压力为真空,进行高温熔渗,自然冷却后,得到致密SiCf/SiC复合材料。
经测试,所制备的SiCf/SiC复合材料密度密度2.65g/cm3,孔隙率3.9%,0°方向的拉伸强度283MPa。
实施例2
步骤S110,制备界面相:用模具将单层的热熔纱-单向SiC纤维带夹好,放入界面层沉积炉中,制备氮化硼(BN)界面相,所述氮化硼界面相的厚度为200nm。
在该步骤中,热熔纱-单向SiC纤维带的经向采用了国产SiC纤维,纬向是热熔纱,织物组织为平纹。
步骤S120,制备预浸浆料:用30份的SiC粉体、50份的有机碳源以及20份的有机溶剂配置预浸浆料,经球磨24h后得到混合均匀的预浸浆料。本实施例中,有机碳源采用呋喃树脂,有机溶剂采用丙酮。
步骤S130,制备单向SiC纤维预浸料:将步骤S110中带模具的含有氮化硼界面相的单向SiC纤维带放入真空容器中浸渍,先抽真空,后灌入步骤S120制备的预浸浆料,保压10h后取出,放入烘箱,加热至200℃,保温4h,烘干后,脱模得到单向SiC纤维预浸料。
步骤S140,叠层热压成型:将10层步骤S130得到的单向SiC纤维预浸料带的两面涂刷粘接剂,并按照纤维布的方向[0°-0°-90°-0°-0°-90°](即,按照前两层纤维带沿长度为横向铺叠,下一层纤维带沿长度为纵向铺叠,然后再两层纤维带沿长度为横向铺叠,相邻两层纤维带是交叉方向铺叠)的顺序铺叠,以10℃/min的升温速率从室温加热到200℃,压力为3MPa,保温2小时,通过热压工艺固化成型得到多孔成型体。本实施例中的粘接剂采用呋喃树脂。
步骤S150,高温裂解:将步骤S140得到的多孔成型体放置于高温裂解炉中进行真空裂解,以300℃/h的升温速率从室温加热到1200℃,保温1h,自然冷却后得到SiCf/SiC-C多孔体。
步骤S160,高温熔渗:将步骤S150得到的SiCf/SiC-C多孔体放入熔渗炉中,并用Si粉包埋,以300℃/h的升温速率从室温加热到1450℃,保温2小时,压力为真空,进行高温熔渗,自然冷却后,得到致密的SiCf/SiC复合材料。
经测试,所制备的SiCf/SiC复合材料密度密度2.68g/cm3,孔隙率3.2%,0°方向的拉伸强度为311MPa。
对成型后的复合材料叶片10进行外观质量、内部质量检测,均满足设计要求。
以上所述仅为本申请的实施例而已,并不限制于本申请。在不脱离本发明的范围的情况下对于本领域技术人员来说,本申请可以有各种更改和变化。凡在本申请的精神和原理之内所作的任何修改、等同替换、改进等,均应包含在本申请的权利要求范围内。
Claims (9)
1.一种基于单向带SiCf/SiC复合材料制备方法,其特征在于,包括:
步骤S110,制备界面相:用模具将单层的热熔纱-单向SiC纤维带夹好,放入界面层沉积炉中,制备氮化硼界面相;
步骤S120,制备预浸浆料:用SiC粉体、有机碳源以及有机溶剂按3:5:2的比例配置预浸浆料,经球磨后得到混合均匀的预浸浆料;
步骤S130,制备单向SiC纤维预浸料:将步骤S110中带模具的含有氮化硼界面相的单向SiC纤维带放入真空容器中浸渍,先抽真空,后灌入步骤S120制备的预浸浆料,保压4h~12h后取出,放入烘箱烘干后,脱模得到单向SiC纤维预浸料;
步骤S140,叠层热压成型:将5~20层步骤S130得到的单向SiC纤维预浸料带的两面涂刷粘接剂,并按照纤维布的方向铺叠,通过热压工艺固化成型得到多孔成型体;
步骤S150,高温裂解:将步骤S140得到的多孔成型体放置于高温裂解炉中进行裂解,自然冷却后得到SiCf/SiC-C多孔体;
步骤S160,高温熔渗:将步骤S150得到的SiCf/SiC-C多孔体放入熔渗炉中,并用Si粉包埋进行高温熔渗,自然冷却后,得到致密SiCf/SiC复合材料。
2.根据权利要求1所述的基于单向带SiCf/SiC复合材料制备方法,其特征在于,所述步骤S110中,所述热熔纱-单向SiC纤维带的经向是SiC纤维,纬向是热熔纱,织物组织为平纹。
3.根据权利要求1所述的基于单向带SiCf/SiC复合材料制备方法,其特征在于,所述步骤S110中,所述氮化硼界面相的厚度为100nm~500nm。
4.根据权利要求1所述的基于单向带SiCf/SiC复合材料制备方法,其特征在于,所述步骤S120中,所述有机碳源为呋喃树脂、糠酮树脂、酚醛树脂中的至少一种,所述有机溶剂为乙醇或丙酮。
5.根据权利要求1所述的基于单向带SiCf/SiC复合材料制备方法,其特征在于,所述步骤S130中,放入烘箱烘干的条件为:加热至160℃~240℃,保温2h~24h。
6.根据权利要求1所述的基于单向带SiCf/SiC复合材料制备方法,其特征在于,所述步骤S140中,所述粘接剂为呋喃树脂、酚醛树脂、液态聚碳硅烷中的一种。
7.根据权利要求1所述的基于单向带SiCf/SiC复合材料制备方法,其特征在于,所述步骤S140中,通过热压工艺固化成型的条件是:以5℃/min~10℃/min的升温速率从室温加热到160℃~240℃,压力为2MPa~4MPa,保温0.5小时~2小时。
8.根据权利要求1所述的基于单向的SiCf/SiC复合材料制备方法,其特征在于,所述步骤S150中,高温裂解炉中进行裂解的条件为:以100℃/h~600℃/h的升温速率从室温加热到800℃~1200℃,保温0.5h~2h,压力为真空。
9.根据权利要求1所述的基于单向带SiCf/SiC复合材料制备方法,其特征在于,所述步骤S150中,放入熔渗炉中进行高温熔渗的条件为:以100℃/h~600℃/h的升温速率从室温加热到1410℃~1500℃,保温1小时~4小时,压力为真空。
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