CN113299819B - Superconducting transition edge detector and preparation method thereof - Google Patents
Superconducting transition edge detector and preparation method thereof Download PDFInfo
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- CN113299819B CN113299819B CN202110560045.4A CN202110560045A CN113299819B CN 113299819 B CN113299819 B CN 113299819B CN 202110560045 A CN202110560045 A CN 202110560045A CN 113299819 B CN113299819 B CN 113299819B
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Abstract
The invention relates to the technical field of superconducting electronics, in particular to a superconducting transition edge detector and a preparation method thereof. The preparation method provided by the invention comprises the steps of preparing a cut-off layer, a thin film layer, a superconducting material layer, a normal metal strip and/or a normal metal point, a heat sink, an absorber and the like on a substrate in sequence. In the invention, in order to relieve the difficult problem of twisting lines at the superconducting transition edge, normal metal strips are grown above the superconducting film of the TES detector and some normal metal points are properly added, and meanwhile, in order to reduce the complexity in the preparation of the detector and solve the problem of superconductor quench, a mode of directly contacting an absorber with the superconducting material layer (superconducting film) is adopted, the thickness of a molybdenum film is increased in the preparation of the superconducting film, and the superconducting transition temperature of the detector is regulated and controlled through two sublayers of the superconducting material layer and three layers of films of the absorber.
Description
Technical Field
The invention relates to the technical field of superconducting electronics, in particular to a superconducting transition edge detector and a preparation method thereof.
Background
The superconductive Transition Edge detector (TES) is a new type superconductive detector developed in recent years, the energy resolution can reach 1-2 eV or even sub-eV, and is improved by two orders of magnitude compared with silicon drift detector; on the other hand, the grating array can be integrated into a large-area multi-element array, so that the receiving angle and the effective detection area of the detector are greatly increased, and the detection efficiency can be improved by two orders of magnitude compared with that of a grating. Because the light source has the characteristics of high energy resolution and high detection efficiency, the light source becomes an object for intensively disposing a plurality of advanced X-ray light sources. However, it is a great challenge to produce a TES detector with high energy resolution, large array, high uniformity, and high repeatability.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, it is an object of the present invention to provide a superconducting transition edge detector and a method for manufacturing the same, which solve the problems of the prior art.
To achieve the above and other related objects, according to one aspect of the present invention, there is provided a method for manufacturing a superconducting transition edge detector, including:
1) Forming cut-off layers on two sides of the substrate;
2) Respectively forming thin film layers on the cut-off layers on the two sides;
3) Forming a superconducting material layer on the thin film layer on one side;
4) Forming normal metal strips and/or normal metal points on the edges and/or the upper surface of the superconducting material layer;
5) Forming a heat sink on the thin film layer on one side of the superconducting material layer;
6) Forming an absorber on an upper surface of the superconducting material layer;
7) Etching to form the edge of the superconducting transition edge detector;
8) And etching the back surface of the chip.
In some embodiments of the present invention, in step 1), the substrate is made of a material selected from silicon, and has a thickness of 200 to 500 μm;
and/or, in the step 1), the method for forming the cut-off layer on both sides of the substrate is selected from a chemical vapor deposition method, the material of the cut-off layer can be selected from silicon dioxide, and the thickness of the cut-off layer is 200-500nm.
In some embodiments of the present invention, in the step 2), a method for forming the thin film layer on the stop layer is selected from a chemical vapor deposition method, a material of the thin film layer is selected from silicon nitride, and a thickness of the thin film layer is 500-1500nm.
In some embodiments of the present invention, in the step 3), the method for forming the superconducting material layer on the thin film layer on one side is selected from one or more of magnetron sputtering method, electron beam evaporation method, thermal evaporation method, wet etching and dry etching;
and/or in the step 3), the superconducting material layer is selected from a molybdenum copper material, a molybdenum gold material or a titanium gold material, the superconducting material layer comprises a first sublayer and a second sublayer, the first sublayer is selected from molybdenum or titanium, the second sublayer is selected from copper or gold and the like, the thickness of the first sublayer is 50-100nm, and the thickness of the second sublayer is 150-300nm;
and/or, in the step 3), forming a lead on the film layer on one side.
In some embodiments of the present invention, in the step 4), the method for forming the normal metal strips and/or the normal metal dots on the edge and/or the upper surface of the superconducting material layer is selected from one or more of a magnetron sputtering method, an electron beam evaporation method, a thermal evaporation method, a stripping process, and an etching process;
and/or, in the step 4), the material of the normal metal strips and/or the normal metal points is selected from copper and/or gold, the thickness of the normal metal strips is 200nm-1000nm, the width of the normal metal strips is 20um-500um, the thickness of the normal metal points is 200nm-1000nm, the section diameter of the normal metal points is 20um-500um, the proportion of the area occupied by the normal metal points on the upper surface of the superconducting material layer is less than or equal to 20%, and the normal metal points are uniformly distributed on the upper surface of the superconducting material layer.
In some embodiments of the present invention, in the step 5), the method for forming the heat sink on the film layer on one side is selected from one or more of magnetron sputtering method, electron beam evaporation method, thermal evaporation method, stripping process and etching process;
and/or, in the step 5), the material of the heat sink is selected from gold.
In some embodiments of the present invention, in the step 6), the method for forming the absorber on the upper surface of the superconducting material layer is selected from one or more of magnetron sputtering method, electron beam evaporation method, thermal evaporation method, lift-off process, and etching process;
and/or, in the step 6), the absorber is made of one or more of gold, bismuth and tin, the thickness of the absorber is 500nm-2um, and the area of the absorber distributed on the upper surface of the superconducting material layer accounts for more than 90% of the total area of the upper surface.
In some embodiments of the present invention, in the step 7), a method for etching to form the edge of the superconducting transition edge detector is selected from dry etching or wet etching.
In some embodiments of the present invention, in step 8), the thin film layer and the stop layer on the back surface of the chip are etched first to expose the substrate, and then the substrate is etched, preferably, the substrate is etched immediately after the back surface of the chip is etched first to expose the substrate;
and/or, in the etching process of the film layer, the cut-off layer and the substrate on the back surface of the chip, preparing a photoetching pattern, wherein an adhesive is not adopted in the preparation process of the photoetching pattern.
The superconducting transition edge detector comprises a thin film layer, wherein a stop layer is arranged on one side of the thin film layer, a superconducting material layer and a heat sink are arranged on the other side of the thin film layer, normal metal strips are distributed on the edge of the superconducting material layer, normal metal points are distributed on the upper surface of the superconducting material layer, an absorber is further arranged on the upper surface of the superconducting material layer, and the superconducting material layer is at least partially contacted with the absorber.
Drawings
FIG. 1 is a schematic diagram of the experimental procedure in example 1 of the present invention.
FIG. 2 is a schematic diagram of the experimental procedure in example 1 of the present invention.
FIG. 3 is a schematic diagram of the experimental procedure in example 1 of the present invention.
FIG. 4 is a schematic diagram of the experimental procedure in example 1 of the present invention.
FIG. 5 is a schematic diagram of the experimental procedure in example 1 of the present invention.
FIG. 6 is a schematic diagram of the experimental procedure in example 1 of the present invention.
FIG. 7 is a schematic diagram showing the experimental procedure in example 1 of the present invention.
FIG. 8 is a schematic view of the experimental procedure in example 1 of the present invention.
FIG. 9 is a schematic view of the experimental procedure in example 1 of the present invention.
FIG. 10 is a schematic view of the experimental procedure in example 1 of the present invention.
FIG. 11 is a schematic view showing the experimental procedure in example 1 of the present invention.
FIG. 12 is a schematic view showing the experimental procedure in example 1 of the present invention.
FIG. 13 is a schematic view of the experimental procedure in example 1 of the present invention.
FIG. 14 is a schematic view of the experimental procedure in example 1 of the present invention.
FIG. 15 is a schematic view of the experimental procedure in example 1 of the present invention.
FIG. 16 is a schematic view showing the experimental procedure in example 1 of the present invention.
FIG. 17 is a schematic view showing an experimental procedure in example 1 of the present invention.
FIG. 18 is a schematic view showing an experimental procedure in example 1 of the present invention.
FIG. 19 is a schematic view showing an experimental procedure in example 1 of the present invention.
FIG. 20 is a schematic view showing an experimental procedure in example 1 of the present invention.
FIG. 21 is a schematic view showing an experimental procedure in example 1 of the present invention.
FIG. 22 is a schematic view showing an experimental procedure in example 1 of the present invention.
FIG. 23 is a schematic view showing an experimental procedure in example 1 of the present invention.
Fig. 24 is a schematic diagram showing an exemplary pulse signal in embodiment 1 of the present invention.
Fig. 25 is a schematic diagram showing an exemplary energy resolution in embodiment 1 of the present invention.
Description of the element reference numerals
1. Silicon substrate
2. Silicon dioxide film
3. Silicon nitride film
4. Molybdenum structure
5. Copper structure
6. Copper metal
7. Heat sink
8. Absorbent body
9. Paraffin wax
10. Alumina substrate
11. Photoresist
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure of the present specification.
For the sake of brevity, only a few numerical ranges are explicitly disclosed herein. However, any lower limit may be combined with any upper limit to form a range not explicitly recited, and any lower limit may be combined with other lower limits to form a range not explicitly recited, as well as any upper limit may be combined with any other upper limit to form a range not explicitly recited. Also, although not explicitly recited, each point or individual value between endpoints of a range is encompassed within the range. Thus, each point or individual value can form a range not explicitly recited as its own lower or upper limit in combination with any other point or individual value or in combination with other lower or upper limits.
In the description herein, it is to be noted that, unless otherwise specified, "above" and "below" are inclusive, and "one or more" of "plural" means two or more.
The above summary of the present invention is not intended to describe each disclosed embodiment or every implementation of the present invention. The following description more particularly exemplifies illustrative embodiments. At various points throughout this application, guidance is provided through a series of embodiments that can be used in various combinations. In various embodiments, the list is merely a representative group and should not be construed as exhaustive.
The first aspect of the present invention provides a method for manufacturing a superconducting transition edge detector, including:
1) Forming cut-off layers on two sides of the substrate;
2) Respectively forming thin film layers on the cut-off layers on the two sides;
3) Forming a superconducting material layer on the thin film layer on one side;
4) Forming normal metal strips and/or normal metal points on the edges and/or the upper surface of the superconducting material layer;
5) Forming a heat sink on the thin film layer on one side of the superconducting material layer;
6) Forming an absorber on an upper surface of the superconducting material layer;
7) Etching to form the edge of the superconducting transition edge detector;
8) And etching the back surface of the chip.
In the invention, in order to relieve the difficult problem of the twisted line at the superconducting transition edge, a normal metal strip is grown above a superconducting film of a TES detector, some normal metal points are properly added, meanwhile, in order to reduce the complexity in the preparation of the detector and solve the problem of superconductor quench, a mode of directly contacting an absorber with the superconducting material layer (superconducting film) is adopted, the thickness of a molybdenum film is increased in the preparation of the superconducting film, the superconducting transition temperature of the detector is regulated and controlled through two sublayers of the superconducting material layer and three layers of films of the absorber, and an adhesive is not usually used in the preparation of photoetching patterns of a film layer, a cut-off layer and a substrate on the back of a chip, so that the harm of the toxic adhesive to operators can be avoided.
The preparation method of the superconducting transition edge detector provided by the invention can comprise the following steps: cut-off layers are formed on both sides of the substrate. In order to ensure that the thin film is not over-etched during the deep silicon etching process, a stop layer is usually added between the substrate and the thin film, and the stop layer usually has higher stop capability and low stress. One skilled in the art can select an appropriate method to form the cut-off layer on the thin film layers on both sides, respectively. For example, a chemical vapor deposition method (e.g., a low pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition method, an inductively coupled plasma chemical vapor deposition method, etc.) or the like can be employed. For another example, the material of the substrate may be selected from silicon, etc., and the thickness of the substrate may be 200 to 500. Mu.m, 200 to 250. Mu.m, 250 to 300. Mu.m, 300 to 350. Mu.m, 350 to 400. Mu.m, 400 to 450. Mu.m, or 450 to 500. Mu.m. For another example, the material of the cut-off layer may be selected from silicon dioxide, etc., and the thickness of the cut-off layer may be 200-1000nm, 200-250nm, 250-300nm, 300-350nm, 350-400nm, 400-450nm, 450-500nm, 500-550nm, 550-600nm, 600-650nm, 650-700nm, 700-750nm, 750-800nm, 800-850nm, 850-900nm, 900-950nm, or 950-1000nm.
The preparation method of the superconducting transition edge detector provided by the invention can also comprise the following steps: thin film layers are formed on the cut-off layers on both sides, respectively. The entire device of the superconducting transition edge detector can be generally placed on a thin film with a certain thickness, and in order to prevent the thin film from being broken in the deep silicon etching process, the thin film generally needs to have good mechanical properties and low stress characteristics. One skilled in the art can select an appropriate method to form the thin film layer on the stopper layer. For example, a chemical vapor deposition method (e.g., a low pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition method, an inductively coupled plasma chemical vapor deposition method, etc.) or the like can be employed. For another example, the material of the thin film layer may be selected from silicon nitride, etc., and the thickness of the thin film layer may be 500-1500nm, 500-550nm, 550-600nm, 600-650nm, 650-700nm, 700-750nm, 750-800nm, 800-850nm, 850-900nm, 900-950nm, 950-1000nm, 1000-1050nm, 1050-1100nm, 1100-1150nm, 1150-1200nm, 1200-1250nm, 1250-1300nm, 1300-1350nm, 1350-1400nm, 1400-1450nm, or 1450-1500nm.
The preparation method of the superconducting transition edge detector provided by the invention can also comprise the following steps: a superconducting material layer is formed on the thin film layer on one side. The superconducting material layer is the superconducting material which is used as a detector in the whole device. The material selected for the superconducting material layer may be selected from molybdenum-copper material, molybdenum-gold material, titanium-gold material, or the like. One skilled in the art may select an appropriate method to form a layer of superconducting material on one side of the thin film layer. For example, a thin film corresponding to the superconducting material layer may be grown on the thin film layer on one side, and further etched to form the superconducting material layer, and the lead may be further formed at the same time as the formation of the superconducting material layer. For another example, the method for growing the film corresponding to the superconducting material layer on the film layer on one side may adopt a magnetron sputtering method, an electron beam evaporation method, a thermal evaporation method, and the like, two films may generally grow under the condition of not breaking vacuum or twice under the condition of breaking vacuum, and the method for etching the film may be selected from a wet etching method, a dry etching method, and the like. For another example, the superconducting material layer may generally include a first sub-layer and a second sub-layer, the first sub-layer may be selected from molybdenum, titanium, or the like, the second sub-layer may be selected from copper, gold, or the like, the first sub-layer may have a thickness of 50-100nm, 50-55nm, 55-60nm, 60-65nm, 65-70nm, 70-75nm, 75-80nm, 80-85nm, 85-90nm, 90-95nm, or 95-100nm, and the second sub-layer may have a thickness of 100-300nm, 100-120nm, 120-140nm, 140-160nm, 160-180nm, 180-200nm, 200-220nm, 220-240nm, 240-260nm, 260-280nm, or 280-300nm.
The preparation method of the superconducting transition edge detector provided by the invention can also comprise the following steps: normal metal strips and/or normal metal dots are formed on the edges and/or upper surface of the layer of superconducting material. As described above, to alleviate the problem of the kink lines at the superconducting transition edge, normal metal strips are grown on the superconducting thin film of the TES probe and some normal metal points are added appropriately. A person skilled in the art may select a suitable method for forming the normal metal strips and/or the normal metal dots on the edges and/or the upper surface of the layer of superconducting material. For example, thin films corresponding to the normal metal strips and/or normal metal dots may be grown on the superconducting material layer, and further etched to form the superconducting material layer. For another example, the method for growing the thin film corresponding to the normal metal strip and/or the normal metal point on the superconducting material layer may adopt a magnetron sputtering method, an electron beam evaporation method, a thermal evaporation method, and the like, and the method for etching the thin film may be selected from a stripping process, an etching process, and the like. As another example, the material of the normal metal strips and/or the normal metal dots may be selected from copper, gold, etc., the normal metal strips may have a thickness of 200-1000nm, 200-250nm, 250-300nm, 300-350nm, 350-400nm, 400-450nm, 450-500nm, 500-550nm, 550-600nm, 600-650nm, 650-700nm, 700-750nm, 750-800nm, 800-850nm, 850-900nm, 900-950nm, or 950-1000nm, the width of the normal metal strips may be 20-500um, 20-40um, 40-60um, 60-80um, 80-100um, 100-150um, 150-200um, 200-250um, 250-300um, 300-350um, 350-400um, 400-450um, or 450-500um, the thickness of the normal metal point can be 200-1000nm, 200-250nm, 250-300nm, 300-350nm, 350-400nm, 400-450nm, 450-500nm, 500-550nm, 550-600nm, 600-650nm, 650-700nm, 700-750nm, 750-800nm, 800-850nm, 850-900nm, 900-950nm or 950-1000nm, the section diameter of the normal metal point can be 20-500um, 20-40um, 40-60um, 60-80um, 80-100um, 100-150um, 150-200um, 200-250um, 250-300um, 300-350um, 350-400um, 400-450um or 450-500um, the proportion of the area occupied by the normal metal point on the upper surface of the superconducting material layer can be usually not more than 20%, not more than 1%, 1-2%, 2-4%, 4-6%, 6-8%, 8-10%, 10-12%, 12-14-16%, 16-18% or 18-20%, and the normal metal dots are generally uniformly distributed on the upper surface of the superconducting material layer.
The preparation method of the superconducting transition edge detector provided by the invention can also comprise the following steps: a heat sink is formed on one side of the thin film layer. A heat sink generally refers to a component whose temperature does not change with the amount of thermal energy transferred to it, and may generally be located on a thin film layer on one side of the detector. One skilled in the art can select a suitable method to form the heat sink on one side of the thin film layer. For example, a thin film corresponding to the heat sink may be grown on the thin film layer and further subjected to etching to form the heat sink. For another example, the method for growing the thin film corresponding to the heat sink on the thin film layer may adopt a magnetron sputtering method, an electron beam evaporation method, a thermal evaporation method, and the like, and the method for etching the thin film may be selected from a lift-off process, an etching process, and the like. For another example, when the heat sink is manufactured, a suitable adhesion material, specifically, titanium or the like, may be used. For another example, the heat sink may be made of gold, etc., and may have a thickness of 200-1000nm, 200-250nm, 250-300nm, 300-350nm, 350-400nm, 400-450nm, 450-500nm, 500-550nm, 550-600nm, 600-650nm, 650-700nm, 700-750nm, 750-800nm, 800-850nm, 850-900nm, 900-950nm, or 950-1000nm.
The preparation method of the superconducting transition edge detector provided by the invention can also comprise the following steps: an absorber is formed on the upper surface of the superconducting material layer. The present application provides probes in which the absorber is typically in direct contact with the layer of superconducting material (superconducting film). The skilled person can select a suitable method for forming the absorber on the upper surface of the layer of superconducting material. For example, a thin film corresponding to the absorber may be grown on the superconducting material layer, and further subjected to etching to form the absorber. For another example, a method of growing a thin film corresponding to the absorber on the superconducting material layer may employ a magnetron sputtering method, an electron beam evaporation method, a thermal evaporation method, or the like, and a method of etching the thin film may be selected from a lift-off process, an etching process, or the like. For another example, the absorber may be selected from gold, bismuth, tin, etc., and the thickness of the absorber may be 500-2000nm, 500-600nm, 600-700nm, 700-800nm, 800-900nm, 900-1000nm, 1000-1100nm, 1100-1200nm, 1200-1300nm, 1300-1400nm, 1500-1600nm, 1600-1700nm, 1700-1800nm, 1800-1900nm, or 1900-2000nm. For another example, the area of the superconducting material layer on the upper surface thereof, on which the absorber is distributed, may be equal to or greater than 90%, 90 to 91%, 91 to 92%, 92 to 93%, 93 to 94%, 94 to 95%, 95 to 96%, 96 to 97%, 97 to 98%, 98 to 99%, or equal to or greater than 99% of the total area of the upper surface thereof.
The preparation method of the superconducting transition edge detector provided by the invention can also comprise the following steps: and etching to form the edge of the superconducting transition edge detector. After the absorber is formed on the upper surface of the superconducting material layer, the edge of the superconducting transition edge detector can be formed by etching. Suitable etching methods to form the edges of the superconducting transition edge finder should be known to those skilled in the art. For example, various etching methods capable of performing etching on the thin film layer and the stop layer may be used, and specifically, dry etching, wet etching, or the like may be used.
The preparation method of the superconducting transition edge detector provided by the invention can also comprise the following steps: and etching the back surface of the chip. After forming the appropriate probe structures on one side of the substrate, the other side of the substrate can be etched. The person skilled in the art can select a suitable method for etching the other side of the substrate. For example, the chip may be bonded to a suitable bonding substrate for etching, the bonding material may be paraffin, grease, photoresist, or the like, and the bonding substrate may be alumina, glass, silicon wafer, or the like. For example, the thin film layer and the stop layer on the back surface of the chip may be etched to expose the substrate, and then the substrate may be etched. In order to remove the substrate and other redundant materials (such as silicon dioxide, silicon nitride and the like) on the back of the detector, the silicon nitride and the silicon dioxide film need to be removed firstly, then the substrate is removed by adopting a deep silicon etching process, specifically, the silicon nitride and the silicon dioxide film on the back of the detector can be directly etched (a plasma etching method and the like) and then photoetching pattern preparation is carried out, photoresist is usually adopted in the conventional preparation process, so that an adhesive is needed to be used, because the adhesion between the substrate and the photoresist is poor, the adhesion needs to be improved by the adhesive, the application utilizes the good adhesion between the thin film layer and the photoresist, so that the pattern preparation is carried out on the back of the chip firstly, then the thin film layer and the stop layer can be carried out, and finally the substrate is etched by adopting the deep silicon etching process, and particularly, methods such as dry etching, wet etching, deep silicon etching, KOH wet etching and the like can be adopted. In addition, the substrate etching should be performed immediately after the back surface of the chip is etched to expose the substrate (e.g., silicon nitride etching, silicon dioxide etching, etc.), so that the silicon dioxide layer formed when the exposure time in the air is short does not affect the deep silicon etching process, thereby avoiding the use of HF acid.
In a second aspect, the present invention provides a superconducting transition edge detector, which is prepared by the method for preparing the superconducting transition edge detector provided in the first aspect of the present invention. The superconducting transition edge detector can comprise a thin film layer, wherein a stop layer is arranged on one side of the thin film layer, a superconducting material layer and a heat sink are arranged on the other side of the thin film layer, normal metal strips are distributed on the edge of the superconducting material layer, normal metal points are distributed on the upper surface of the superconducting material layer, an absorber is further arranged on the upper surface of the superconducting material layer, and the superconducting material layer is at least partially contacted with the absorber. The thin film layer can be further provided with a lead, the lead and the superconducting material layer are positioned on the same side of the thin film layer, and the lead is electrically connected with the superconducting material layer.
Compared with the prior art, the invention has the following beneficial effects:
1. the method for adding the normal metal strips and the metal points above the superconducting thin film of the TES detector can reduce the noise exceeding of the detector, relieve the problem of the twisted line on the superconducting transition edge, improve the energy resolution of the detector and reduce the energy resolution from more than 10 electron volts to several electron volts.
2. According to the preparation scheme of the absorber and the hundred-nanometer-thickness film, the traditional process for preparing the mushroom-shaped absorber is modified into the common photoetching process, so that the photoetching steps are reduced from two steps to a single step, and the coating steps are reduced from two steps to a single step, so that the complexity in preparing the TES detector can be greatly reduced, and the yield of the TES detector can be improved.
3. The proposal of avoiding using toxic reagents such as photoresist adhesives and the like and strong corrosive reagents such as HF acid and the like to human bodies can reduce the exposure of workers to the toxic and harmful reagents.
The present application is further illustrated by the following examples, which are not intended to limit the scope of the present application.
Example 1
The design and preparation method of the TES detector suitable for the application of the X-ray energy spectrometer comprises the following steps:
step 1): preparing a silicon substrate 1 of which both sides are polished, the thickness of silicon being 400um, as shown in fig. 1;
step 2): growing silicon dioxide films 2 with the thickness of 500nm on two sides of the silicon substrate by using low-pressure chemical vapor deposition, wherein the side view is shown in FIG. 2;
and step 3): growing a low-stress silicon nitride film 3 on the silicon dioxide films 2 at two sides of the silicon substrate, wherein the thickness of the silicon nitride film is 1um, and the side view is shown in figure 3;
step 4): successively growing a molybdenum structure 4 and a copper structure 5 on one side of the grown silicon dioxide and silicon nitride film 3 by using a magnetron sputtering method, wherein the thicknesses of the copper structures are 60nm and 200nm respectively, and the side view is shown in figure 4;
step 5): etching copper by using a wet etching process to form a copper structure 5 of the superconductive thin film of the TES detector, wherein the side view is shown in FIG. 5, and the top view is shown in FIG. 6;
step 6): etching molybdenum by using a wet etching process to form a molybdenum structure of the superconductive film of the TES detector and a molybdenum lead 4, wherein a side view is shown in FIG. 7, and a top view is shown in FIG. 8;
step 7): copper metal 6 is grown on the edge of and above the copper structure 5 of the superconductive film of the TES detector by using a stripping process and an electron beam evaporation method, the thickness is 500nm, the side view is shown in FIG. 9, and the top view is shown in FIG. 10;
step 8): a heat sink 7 is grown on the silicon nitride film 3 on the front surface (namely the TES detector side) of the silicon substrate by using a stripping process and an electron beam evaporation method, the thickness is 200nm, the side view is shown in FIG. 11, and the top view is shown in FIG. 12;
step 9): growing a gold absorber 8 on the copper structure 5 of the superconducting film of the detector by using a stripping process and an electron beam evaporation method, wherein the thickness is 500nm, the side view is shown in FIG. 13, and the top view is shown in FIG. 14;
step 10): etching the silicon nitride film 3 and the silicon dioxide film 2 at the edge of the chip by using a dry etching process to expose the silicon substrate 1, wherein the side view is shown in FIG. 15, and the top view is shown in FIG. 16;
step 11): the patterned front side of the silicon substrate was bonded to a piece of alumina substrate 10 using paraffin 9, the side view being shown in fig. 17;
step 12): a pattern of deep silicon etching is prepared on the silicon nitride film 3 on the back side of the silicon substrate using a thick photoresist 11, as shown in fig. 18 in side view and fig. 19 in top view;
step 13): etching the silicon nitride film 3 and the silicon dioxide film 2 on the back surface of the silicon substrate by using a dry etching process to expose the silicon substrate 1, wherein the side view is shown in FIG. 20, and the top view is shown in FIG. 21;
step 14): etching the silicon substrate using a deep silicon etch process until the paraffin 9 is exposed at the chip boundary and the silicon dioxide film 2 (stop layer) is exposed at the back of the TES detector, as shown in FIG. 22 for a side view and FIG. 23 for a top view;
step 15): and (4) placing the bonded wafer in acetone, and separating the chip from the alumina wafer.
And (3) putting the prepared detector chip into a dilution refrigerator with the working temperature as low as 50mK or even lower for cooling.
During testing, an exemption source is used as an X-ray source, a superconducting quantum interferometer is used as low-temperature reading electronics of a detector, ADC and DAC are used as room-temperature electronics for signal reading, pulse signals are obtained, and the result is shown in figure 24.
The obtained pulse signals were then processed and by fitting the processed data, the result is shown in fig. 25, and it can be seen that an energy resolution of 6eV had been finally achieved at an X-ray of 1.5 KeV.
In conclusion, the present invention effectively overcomes various disadvantages of the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (11)
1. A method for preparing a superconducting transition edge detector is characterized by comprising the following steps:
1) Forming cut-off layers on two sides of the substrate;
2) Respectively forming thin film layers on the cut-off layers on the two sides;
3) Forming a superconducting material layer on the thin film layer on one side;
4) Forming normal metal strips and/or normal metal points on the edges and/or the upper surface of the superconducting material layer;
5) Forming a heat sink on the thin film layer on one side of the superconducting material layer;
6) Forming an absorber on an upper surface of the superconducting material layer;
7) Etching to form the edge of the superconducting transition edge detector;
8) And etching the back surface of the chip.
2. The method according to claim 1, wherein in step 1), the substrate is made of a material selected from the group consisting of silicon, and has a thickness of 200 to 500 μm;
and/or in the step 1), the method for forming the cut-off layer on the two sides of the substrate is selected from a chemical vapor deposition method, the material of the cut-off layer is selected from silicon dioxide, and the thickness of the cut-off layer is 200-500nm.
3. The method of claim 1, wherein in the step 2), the thin film layer is formed on the stop layer by a chemical vapor deposition method, the thin film layer is made of silicon nitride, and the thin film layer has a thickness of 500-1500nm.
4. The method according to claim 1, wherein in the step 3), the method for forming the superconducting material layer on the thin film layer on one side is selected from one or more of magnetron sputtering, electron beam evaporation, thermal evaporation, wet etching and dry etching;
and/or in the step 3), the superconducting material layer is selected from a molybdenum copper material, a molybdenum gold material or a titanium gold material, the superconducting material layer comprises a first sublayer and a second sublayer, the first sublayer is selected from molybdenum or titanium, the second sublayer is selected from copper or gold and the like, the thickness of the first sublayer is 50-100nm, and the thickness of the second sublayer is 150-300nm;
and/or, in the step 3), forming a lead on the film layer on one side.
5. The method according to claim 1, wherein in the step 4), the method for forming the normal metal strips and/or the normal metal dots on the edges and/or the upper surface of the superconducting material layer is selected from one or more of a magnetron sputtering method, an electron beam evaporation method, a thermal evaporation method, a stripping process and an etching process;
and/or, in the step 4), the material of the normal metal strips and/or the normal metal points is selected from copper and/or gold, the thickness of the normal metal strips is 200nm-1000nm, the width of the normal metal strips is 20 μm-500 μm, the thickness of the normal metal points is 200nm-1000nm, the section diameter of the normal metal points is 20 μm-500 μm, the proportion of the area occupied by the normal metal points on the upper surface of the superconducting material layer is less than or equal to 20%, and the normal metal points are uniformly distributed on the upper surface of the superconducting material layer.
6. The preparation method according to claim 1, wherein in the step 5), the method for forming the heat sink on the film layer on one side is selected from one or more of magnetron sputtering, electron beam evaporation, thermal evaporation, stripping process and etching process;
and/or, in the step 5), the material of the heat sink is selected from gold.
7. The method according to claim 1, wherein in the step 6), the method for forming the absorber on the upper surface of the superconducting material layer is selected from one or more of a magnetron sputtering method, an electron beam evaporation method, a thermal evaporation method, a lift-off process, and an etching process;
and/or, in the step 6), the absorber is made of one or a combination of more of gold, bismuth and tin, the thickness of the absorber is 500nm-2000nm, and the area of the absorber distributed on the upper surface of the superconducting material layer accounts for more than or equal to 90% of the total area of the upper surface.
8. The method of claim 1, wherein in step 7), the method for etching to form the edge of the superconducting transition edge detector is selected from dry etching or wet etching.
9. The preparation method according to claim 1, wherein in the step 8), the thin film layer and the stop layer on the back surface of the chip are etched to expose the substrate, and then the substrate is etched;
and/or, in the etching process of the film layer, the cut-off layer and the substrate on the back surface of the chip, preparing a photoetching pattern, wherein an adhesive is not adopted in the preparation process of the photoetching pattern.
10. The manufacturing method according to claim 9, wherein in the step 8), the substrate etching is performed immediately after etching the back surface of the chip to expose the substrate.
11. A superconducting transition edge detector is prepared by the preparation method of the superconducting transition edge detector according to any one of claims 1 to 10, and is characterized by comprising a thin film layer, wherein a stop layer is arranged on one side of the thin film layer, a superconducting material layer and a heat sink are arranged on the other side of the thin film layer, normal metal strips are distributed on the edge of the superconducting material layer, normal metal points are distributed on the upper surface of the superconducting material layer, an absorber is further arranged on the upper surface of the superconducting material layer, and the superconducting material layer is at least partially contacted with the absorber.
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