CN113284542A - Topological magnetic structure, magnetic skynet writing method and memory - Google Patents
Topological magnetic structure, magnetic skynet writing method and memory Download PDFInfo
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- CN113284542A CN113284542A CN202110594624.0A CN202110594624A CN113284542A CN 113284542 A CN113284542 A CN 113284542A CN 202110594624 A CN202110594624 A CN 202110594624A CN 113284542 A CN113284542 A CN 113284542A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
Abstract
The invention relates to a topological magnetic structure, a magnetic Sgeminq writing method, a magnetic Sgeminq memory, a reading and writing system and a racetrack memory, wherein the topological magnetic structure comprises the following components: a substrate layer; the buffer layer is arranged on the substrate layer, and the surface roughness of the buffer layer is smaller than that of the substrate layer; the magnetic layer is arranged on the buffer layer and comprises at least one ferrimagnetic layer, and the magnetic layer is used for generating magnetic skybromone under a preset condition; and the protective layer is arranged on the magnetic layer and used for protecting the magnetic layer. The device based on the ferrimagnetic material has the advantages of insensitivity to magnetic field disturbance, high eigenfrequency and the like, so that the device has wide application prospects in the fields of ultra-high density information storage, terahertz (THz) and the like.
Description
Technical Field
The present invention relates to information storage devices of magnetic segregants, and more particularly, to a topological magnetic structure, a method of writing magnetic segregants, and a memory.
Background
With the rapid development of the information age, the explosive growth of data volume has also put higher demands on information storage media. As the size of the current conventional magnetic storage media is reduced, the size limit caused by the quantum effect and the thermal effect thereof cause the development of the conventional information storage media to be a bottleneck. The spin electronic technology introduces a completely new degree of freedom of electron spin, and the spin electronic device has the advantages of low static power consumption, unlimited high-speed reading and writing, nonvolatile storage and the like, is considered as a key technology for breaking through the current bottleneck, is expected to greatly reduce the power consumption of the device and break through thermal effect flail. The topological magnetic structure (magnetic Sgmon, vortex domain and the like) is a particle-like spinning structure with topological protection, has wide development prospect in related spintronics application, and is expected to become a next-generation novel information storage carrier. Compared with the traditional information storage carrier, the method has the following obvious advantages: compared with the traditional magnetic domain, the size of the topological magnetic structure can be very small, and the current single magnetic Sgmon can be 5 nm; the topological magnetic structure has the characteristic of topological protection, is more stable compared with the traditional magnetic domain, is not easily influenced by external conditions (magnetic field, temperature and the like), and improves the stability of the device; the driving current of the topological magnetic structure is far smaller than that of the domain wall, and the characteristic of low power consumption of the information storage device based on the topological magnetic structure is fully embodied.
In the conventional technology, magnetic skynergons are generated in a topological magnetic structure by using a periodic spin-polarized pulse current, and a higher current density and a longer writing time are generally required, namely, higher energy consumption and slower data writing speed are implied.
Disclosure of Invention
In view of the above, it is necessary to provide a topological magnetic structure, a magnetic siganmin writing method, a magnetic siganmin memory, a reading and writing system, and a racetrack memory, for solving the problems of high power consumption and low efficiency in the prior art of writing stored data.
A topological magnetic structure, comprising:
a substrate layer;
the buffer layer is arranged on the substrate layer, and the surface roughness of the buffer layer is smaller than that of the substrate layer;
the magnetic layer is arranged on the buffer layer and comprises at least one ferrimagnetic layer, and the magnetic layer is used for generating magnetic skybromone under a preset condition;
and the protective layer is arranged on the magnetic layer and used for protecting the magnetic layer.
In one embodiment, the ferrimagnetic layer comprises platinum, cobalt and gadolinium in a stacked arrangement.
A magnetic Sgemini writing method is applied to the topological magnetic structure, and comprises the following steps:
and carrying out laser irradiation on the surface of the protective layer for a preset time so as to enable the magnetic layer to generate magnetic skyburn.
In one embodiment, the predetermined time period is 100 femtoseconds.
In one embodiment, the laser wavelength is in the range of 700-800 nm.
In one embodiment, the laser has a frequency of 1 kHz.
A memory, comprising:
a plurality of topological magnetic structures as described above, wherein the substrate layer is a ferroelectric substrate;
the laser emission unit is used for carrying out laser irradiation on the surface of the protective layer for a preset time so as to enable the magnetic layer to generate magnetic skybirds;
and the driving unit is connected with the substrate and used for driving the magnetic skynerger to move in the topological magnetic structure so as to realize the storage of information.
A read-write system comprising:
the memory as described above; and
and the reading device is used for reading the information stored in the memory.
A racetrack memory comprising:
the nanobelt comprises a topological magnetic structure with a preset length, wherein the substrate material is silicon, and the nanobelt is sequentially divided into an information writing area, an information storage area and an information reading area along the length direction;
the laser emission unit is positioned in the information writing area and used for carrying out laser irradiation on the surface of the protective layer for a preset time so as to enable the magnetic layer to generate magnetic Skeleton;
and the current driving unit is used for driving the magnetic skynerger to move in the topological magnetic structure so as to realize the storage of information.
In one embodiment, the information reading region is provided with a magnetic tunnel junction for reading magnetic skynergons.
The topological magnetic structure comprises: a substrate layer; the buffer layer is arranged on the substrate layer, and the surface roughness of the buffer layer is smaller than that of the substrate layer; the magnetic layer is arranged on the buffer layer and comprises at least one ferrimagnetic layer, and the magnetic layer is used for generating magnetic skybromone under a preset condition; and the protective layer is arranged on the magnetic layer and used for protecting the magnetic layer. In the conventional technology, the magnetic layer is made of a common ferromagnetic material, while the essential difference between ferromagnetism and ferromagnetism is that the basic structure of the ferrimagnetic moment is composed of two parts, and there is a partial cancellation of the two magnetic moments when the two magnetic moments are arranged in opposite directions, for example, the Co layer and the Gd layer are ferromagnetic layers, but the magnetic moments between the two layers are arranged in opposite directions, and the overall magnetization is smaller than that of either single ferromagnetic layer. Therefore, compared with ferromagnetism, the ferrimagnetic material has a smaller ferromagnetic residual field, and in the aspect of dynamics, a device based on the ferrimagnetic material has the advantages of insensitivity to magnetic field disturbance, high eigenfrequency and the like, so that the ferrimagnetic material has a wide application prospect in the fields of ultrahigh-density information storage, terahertz (Tera Hertz, THz) and the like.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is one of the schematic diagrams of the topological magnetic structure in one embodiment;
FIG. 2 is a second schematic diagram of a topological magnetic structure according to an embodiment;
FIG. 3 is a third schematic diagram of a topological magnetic structure in an embodiment;
FIG. 4 is a fourth illustration of a topological magnetic structure in accordance with an embodiment;
FIG. 5 is a diagram of an embodiment of a memory;
FIG. 6 is a diagram of a racetrack memory according to an embodiment.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present.
Spatial relational terms, such as "under," "below," "under," "over," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention, such that variations from the shapes shown are to be expected, for example, due to manufacturing techniques and/or tolerances. Thus, embodiments of the invention should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing techniques. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.
In one embodiment, as shown in FIG. 1, a topological magnetic structure 100 comprises: substrate layer 110, buffer layer 120, magnetic layer 130, and protective layer 140. The buffer layer 120 is disposed on the substrate layer 110, and the surface roughness of the buffer layer 120 is smaller than that of the substrate layer 110, so as to provide a smooth surface, which is beneficial to deposition and adhesion of other layers, and achieve an effect of uniform structure. The magnetic layer 130 is disposed on the buffer layer 120, and includes at least one ferrimagnetic layer 131, as shown in fig. 2 and 3, for generating magnetic skyburn under a predetermined condition. The protective layer 140 is disposed on the magnetic layer 130, and the protective layer material has high stability, is inactive and has strong oxidation resistance, so as to protect the magnetic layer from being oxidized and prolong the service life. Ferromagnetism refers to the phenomenon in which magnetic moments of adjacent atoms or ions in a substance are aligned in approximately the same direction in some regions due to their interaction, and the degree of resultant magnetic moment orientation in these regions increases to a certain limit as the applied magnetic field strength increases. Ferrimagnetism is due to the exchange of electrons or other interactions between adjacent atoms within a magnetic domain in the absence of an applied magnetic field. So that their magnetic moments are in a partially cancelled ordered arrangement after overcoming the influence of thermal motion, so that there is also a resultant magnetic moment. Therefore, compared with a ferromagnetic material, the ferromagnetic residual field of the ferrimagnetic material is smaller, and in the aspect of dynamics, a device based on the ferrimagnetic material has the advantages of insensitivity to magnetic field disturbance, high intrinsic frequency and the like, so that the ferrimagnetic material has wide application prospects in the fields of ultra-high density information storage, terahertz (Tera Hertz, THz) and the like.
In one embodiment, the material of the buffer layer 120 is tantalum. Tantalum is a metal element, the element symbol is Ta, the corresponding simple substance is steel gray metal, the tantalum has extremely high corrosion resistance, and the tantalum does not react with hydrochloric acid, concentrated nitric acid and aqua regia under cold and hot conditions. And has ductility, can be drawn into thin wire type foil, and has small thermal expansion coefficient. Tantalum has very excellent chemical properties and very high corrosion resistance. It is understood that the buffer layer material is not limited to the tantalum, and may be any other material that can provide a smooth buffer surface, has high chemical stability, and does not react with the materials in contact with the upper and lower interfaces.
In one embodiment, the material of the magnetic layer 130 is at least one layer having a ferrimagnetic layer 131, wherein the material of the ferrimagnetic layer 131 is, as shown in fig. 4, platinum, cobalt, gadolinium sequentially disposed from the bottom layer to the top layer. Platinum is a chemical element, chemical symbol Pt, is one of noble metals, is commonly called platinum as a simple substance, belongs to platinum group elements, and has paramagnetism. Has good ductility, thermal conductivity and electrical conductivity. It is chemically inert, stable in air and humid environments, insoluble in hydrochloric, sulfuric, nitric and alkaline solutions, but soluble in aqua regia and molten alkali. Cobalt, element symbol Co, silver-white ferromagnetic metal, which is silvery white with light pink surface, has lustrous steel gray metal, is relatively hard and brittle, has ferromagnetic property, and disappears when heated to 1150 ℃. It is stable in humid air and does not react with water at normal temperature. Cobalt is an important raw material for producing heat-resistant alloy, hard alloy, anticorrosive alloy, magnetic alloy and various cobalt salts. Gadolinium is a metal element, and the symbol of the element is Gd, which is silvery white and malleable. Gadolinium is magnetic at room temperature. Gadolinium is relatively stable in dry air and loses luster in wet air, and plays an important role in modern technological innovation. In the system, the Pt/Co interface generates vertical anisotropy, and the Co/Gd interface generates collinear antiferromagnetic coupling, so that the ferrimagnetism is displayed on the whole.
In one embodiment, the material of the protective layer 140 is ruthenium. Ruthenium is a hard, brittle and light grey polyvalent rare metal element, the element symbol is Ru, which is one of platinum group metals, the content of Ru in earth crust is only one part per billion, which is one of the rarest metals, the ruthenium has stable property and strong corrosion resistance, and the ruthenium can resist the corrosion of hydrochloric acid, sulfuric acid, nitric acid and aqua regia at normal temperature. Ruthenium is the least expensive of the platinum group metals, although platinum, palladium, and the like are all more abundant than ruthenium. It is understood that the material of the protective layer is not limited to the above ruthenium, and may be any other material as long as it can ensure that the magnetic layer is not oxidized, has high chemical stability, and does not react with the material of the magnetic layer.
In one embodiment, a method for preparing a topological magnetic structure is provided, and the topological magnetic structure is obtained by growing by using a magnetron sputtering technology. Magnetron sputtering (magnetron-sputtering) is a "high-speed low-temperature sputtering technique" that has rapidly developed in the 70 s. The magnetron sputtering technique is to form an orthogonal electromagnetic field above the surface of a cathode target. When the secondary electrons generated by sputtering are accelerated to high-energy electrons in the cathode fall region, the high-energy electrons do not fly to the anode directly, but do reciprocating oscillation motion similar to cycloid under the action of orthogonal electromagnetic field. The energetic electrons continuously collide with gas molecules and transfer energy to the latter, ionizing them to become low-energy electrons themselves. The low-energy electrons finally drift to the auxiliary anode near the cathode along magnetic lines to be absorbed, so that the strong bombardment of high-energy electrons to the polar plate is avoided, the damage caused by bombardment heating and electron irradiation of the polar plate in the two-pole sputtering is eliminated, and the characteristic of low temperature of the polar plate in the magnetron sputtering is reflected. Due to the existence of an external magnetic field, the complex movement of electrons increases the ionization rate and realizes high-speed sputtering. The magnetron sputtering is technically characterized in that a magnetic field vertical to the direction of an electric field is generated near a cathode target surface and is generally realized by adopting a permanent magnet.
Specifically, the use power and the use pressure on the magnetron sputtering instrument are firstly set, and in the operation process, the thickness of each layer produced on the substrate layer by the topological magnetic structure is further controlled by controlling the sputtering time.
In one embodiment, a buffer layer of 5nm is deposited on the substrate layer using a magnetron sputter apparatus, a magnetic layer of at least 5.8nm is deposited on the buffer layer, and finally a protective layer of 3nm is deposited on the magnetic layer.
In one embodiment, the magnetic layer deposited on the buffer layer has a platinum material deposited at 2.5nm, a cobalt material deposited at 2.5nm on the platinum material, and a ruthenium material deposited at 1nm on the cobalt material.
In one embodiment, a magnetic skutter writing method is provided, in which laser irradiation is performed on the surface of the protection layer for a predetermined time period to generate magnetic skutters in the magnetic layer. The specific implementation mode is that after the wavelength, the spot size and the pulse time of the laser are determined, the laser irradiates on the prepared topological magnetic structure. The first mechanism is that the temperature of a magnetic film at a spot irradiated by laser rises, ferrimagnetism has a temperature compensation point, the magnetization direction can be changed after the temperature rises over the compensation point, and the magnetization state at the spot is changed into a nonequilibrium state. The second mechanism is that laser irradiation on the film generates an equivalent magnetic field. The two mechanisms work together to achieve the writing of magnetic segregants on ferrimagnetic films. Compared with the traditional magnetic Sgermin writing, the method writes the magnetic Sgermin into the ferrimagnetic material, utilizes laser to irradiate the ferrimagnetic film and write the magnetic Sgermin into the magnetic film, reduces the nucleation energy threshold of the magnetic Sgermin in the magnetic film, combines the properties of a ferrimagnetic temperature compensation point, dynamics and the like, and realizes the ultra-fast writing of the Sgermin on the magnetic film. Compared with the traditional ferromagnetic material, the ferromagnetic material has better application prospect in the field of information storage.
In one embodiment, the preset duration of laser irradiation is 100 femtoseconds.
In one embodiment, the wavelength of the laser light is set within the range of 700-800 nm.
In one embodiment, the laser has a frequency of 1 kHz.
In one embodiment, the energy density at the irradiation spot of the laser is 3 mj per square centimeter.
In one embodiment, a memory is provided, comprising: a plurality of the above-described topological magnetic structure 100, a laser emitting unit 200, and a driving unit 300. Wherein, the substrate layer 110 of the topological magnetic structure is a substrate made of a ferroelectric material. The ferroelectric material refers to a kind of material having ferroelectric effect, all of which have ferroelectric and piezoelectric properties, and the most basic characteristics are that it has spontaneous polarization in some temperature range, and the polarization strength can be reversed with the reversal of external electric field, so that a hysteresis loop appears. The polarization state, which is not caused by an external electric field but by the internal structure of the crystal, is called spontaneous polarization. Ferroelectricity means that a material produces spontaneous polarization over a certain temperature range. Because the positive and negative charge centers in the ferroelectric crystal lattice are not coincident, an electric dipole moment can be generated even without an external electric field, and the spontaneous polarization can change directions under the action of the external electric field. When the temperature is higher than a certain critical value, the lattice structure of the crystal is changed, the centers of positive and negative charges are superposed, and the spontaneous polarization disappears, wherein the temperature critical value is called Curie temperature (Tc). Piezoelectricity is a property that achieves mechanical-electrical energy interconversion. If an external force is applied to the material in a certain direction to deform the material, polarization can occur in the material and charges are generated on the surface, namely the piezoelectric effect; on the contrary, when an electric field is applied to a material, the material is deformed to generate a mechanical force, which is an inverse piezoelectric effect. All ferroelectric materials have both of the above properties, which is one of the material bases for constructing electromechanical systems.
And the laser emitting unit 200 is configured to perform laser irradiation on the surface of the protection layer for a preset time period, so that the magnetic layer generates magnetic skyburn.
And the driving unit 300 is connected with the substrate and is used for driving the magnetic skynerger to move in the topological magnetic structure so as to realize the storage of information.
In one embodiment, a read/write system is provided, comprising: the memory and the reading device are used for reading the storage information in the memory.
The traditional method for writing magnetic skynerger on the racetrack memory by using spin-polarized current generally needs higher current density and longer writing time, and compared with the traditional technology, the memory provided by the invention can realize lower energy consumption and faster data writing speed.
In one embodiment, as shown in FIG. 6, a racetrack memory is provided comprising: a nanoribbon 400, a laser emitting unit 200 and a current driving unit 310, wherein the nanoribbon 400 is made of the above-mentioned topological magnetic structure 100 with a size of 200nm 1800nm 1 nm. The substrate layer 110 in the topological magnetic structure is made of silicon, and has some special properties due to the silicon atom structure: the 4 valence electrons on the outermost layer enable the silicon atoms to be in a metastable structure, the valence electrons enable the silicon atoms to be combined with each other through covalent bonds, and the silicon has higher melting point and density due to the stronger covalent bonds; the chemical property is stable, and the reaction with other substances (except hydrogen fluoride and alkali liquor) is difficult to occur at normal temperature; the silicon crystal has no obvious free electrons, can conduct electricity, but has conductivity lower than that of metal, increases along with the increase of temperature and has semiconductor properties. The nanobelt is sequentially divided into an information writing area, an information storage area and an information reading area along the length direction.
And the laser emission unit 200 is located in the information writing area and is used for performing laser irradiation on the surface of the protective layer for a preset time length so as to enable the magnetic layer to generate magnetic skybirds.
And the current driving unit 310 is provided with an anode in the information reading area and a cathode in the information writing area, and is used for driving the magnetic siganus to move in the topological magnetic structure so as to realize the storage of information.
Among them, the racetrack memory employs the latest "racetrack" technology, which is a memory for storing data using the motion of magnetic skybirds. Magnetic segregants are thin film structures composed of atoms whose magnetic field direction changes regularly. The racetrack memory has the beneficial effects that the nanoscale magnetic material thin line is fixed at one end, the current direction is determined to be 1 or 0, and the two ends of the memory are subjected to continuous pulse current to cause the motion of magnetic sigramins, so that the racetrack memory can realize the full solid state, high speed and extremely low power consumption, still stores data when power is off, and the storage capacity reaches the hard disk level.
In one embodiment, the information reading area of the racetrack memory is provided with Magnetic Tunnel Junctions (MTJs) for reading Magnetic skybrids. Magnetic Tunnel Junctions (MTJs) are a ferromagnetic metal/insulator/ferromagnetic metal sandwich-structured non-uniform Magnetic system. This spin-polarized tunneling process of a metal oxide (typically alumina) barrier between two ferromagnetic metal films (e.g., chromium, cobalt, nickel, or iron-nickel) can also produce a giant magnetoresistance effect. The tunneling current and tunneling resistance of such a magnetic tunnel junction under voltage across the insulating layer depend on the relative orientation of the magnetizations of the two ferromagnetic layers. When this relative orientation is changed under the influence of an external magnetic field, a large Tunneling Magnetoresistance (TMR) is observed. Compared with metal multilayer films, the Magnetic Tunnel Junction (MTJs) has much higher Magnetic field sensitivity, and meanwhile, the structure of the Magnetic Tunnel Junction (MTJs) is very high in resistivity, small in energy consumption and stable in performance, so that the Magnetic Tunnel Junction (MTJs) has the advantage of being incomparable whether being used as a read head, various sensors or a Magnetic Random Access Memory (MRAM).
In one embodiment, the information storage area of the racetrack memory can be divided into a plurality of memory cells along the track direction of the magnetic nanobelt, and each memory cell can store the state of one magnetic stripe. The magnetic skarnming photons passing through the information storage section enter the information reading section, and the polarity of the magnetic skarnming photons passing therethrough is read by the information reading section, thereby reading the binary number "0" or "1", and realizing information storage and information reading.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features of the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A topological magnetic structure, comprising:
a substrate layer;
the buffer layer is arranged on the substrate layer, and the surface roughness of the buffer layer is smaller than that of the substrate layer;
the magnetic layer is arranged on the buffer layer and comprises at least one ferrimagnetic layer, and the magnetic layer is used for generating magnetic skybrids under a preset condition;
and the protective layer is arranged on the magnetic layer and used for protecting the magnetic layer.
2. The topomagnetic structure of claim 1, wherein the ferrimagnetic layer comprises platinum, cobalt, and gadolinium in a stacked arrangement.
3. A method of writing magnetic sigecures, applied to the topological magnetic structure of claim 1 or 2, comprising:
and carrying out laser irradiation for a preset time length on the surface of the protective layer so as to enable the magnetic layer to generate the magnetic skynerger.
4. The method of claim 3, wherein the predetermined period of time is 100 femtoseconds.
5. The method according to claim 3, wherein the laser wavelength is in the range of 700 to 800 nm.
6. The method of claim 3, wherein the laser has a frequency of 1 kHz.
7. A memory, comprising:
a plurality of topologically magnetic structures as claimed in any one of claims 1 to 2 wherein said substrate layer is a ferroelectric substrate;
the laser emitting unit is used for carrying out laser irradiation on the surface of the protective layer for a preset time length so as to enable the magnetic layer to generate the magnetic skybird seeds;
and the driving unit is connected with the substrate and used for driving the magnetic skynerger to move in the topological magnetic structure so as to realize information storage.
8. A read-write system, comprising:
the memory as recited in claim 7; and
and the reading device is used for reading the information stored in the memory.
9. A racetrack memory, comprising:
the nano-belt comprises a topological magnetic structure as claimed in claim 1 with a preset length, wherein the substrate layer is made of silicon, and the nano-belt is sequentially divided into an information writing area, an information storage area and an information reading area along the length direction;
the laser emission unit is positioned in the information writing area and used for carrying out laser irradiation on the surface of the protective layer for a preset time so as to enable the magnetic layer to generate the magnetic skyburn;
and the current driving unit is used for driving the magnetic skynerger to move in the topological magnetic structure so as to realize information storage.
10. The racetrack memory of claim 9, wherein the information read-out region is provided with a magnetic tunnel junction for reading the magnetic skyburn.
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| WO2024011407A1 (en) * | 2022-07-12 | 2024-01-18 | 中国科学院微电子研究所 | Memory cell and preparation method therefor, memory, and information storage method |
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