CN113281574A - Microwave detection device - Google Patents
Microwave detection device Download PDFInfo
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- CN113281574A CN113281574A CN202010102072.2A CN202010102072A CN113281574A CN 113281574 A CN113281574 A CN 113281574A CN 202010102072 A CN202010102072 A CN 202010102072A CN 113281574 A CN113281574 A CN 113281574A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0871—Complete apparatus or systems; circuits, e.g. receivers or amplifiers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0878—Sensors; antennas; probes; detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
- H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a microwave detection device. The microwave detection device includes: the signal receiving module is used for receiving the microwave signal and converting the microwave signal into an alternating current signal; and the magnetoelectric conversion module comprises a magnetic tunnel junction, and the magnetic tunnel junction is used for converting the alternating current signal into a direct current signal. The microwave detection device has the advantages of being small in structure, wide in working frequency range, high in efficiency in unit area range, capable of detecting microwaves with low signal intensity, simple to manufacture, low in cost, adjustable in broadband and the like compared with a detection device of a semiconductor.
Description
Technical Field
The invention belongs to the technical field of microwave detection, and particularly relates to a microwave detection device and a regulation and control method thereof.
Background
At present, a microwave detector is a rectifier circuit system which converts an alternating current signal into a direct current signal and then detects the microwave signal, and the microwave detector has wide application in the fields of remote communication, electronic industry, scientific research and the like. In an electronic communication system, it is often necessary to detect the presence or absence or the intensity of a microwave signal as a standard for normal operation. For example, in a radio receiver, the strength of a received signal is usually measured to adjust an automatic gain control circuit so as to continuously obtain a required output signal from the receiver, and therefore, a microwave detector forms the core of a signal amplitude measuring system. At present, a Schottky diode or a PN junction diode is mainly adopted as an element of a microwave detector; compared with a PN junction diode, the Schottky diode has short recovery time and low forward voltage, so that the Schottky diode has higher detection sensitivity in a wide frequency range.
In the fields of energy supply of indoor low-power wireless sensors, environmental radio frequency, recycling of microwave radiation energy and the like, the collection and conversion efficiency of broadband and low-power microwave energy need to be considered, so that higher requirements are put forward on the power consumption of microwave detectors. Microwave detectors formed by schottky diodes have been widely used in the field of microwave power detection, but have relatively high power consumption. The highest sensitivity of the Schottky diode is 3800mV/mW commercially at present. Although the ultra-small power meter made of the low-barrier Schottky diode can detect the power signal of 0.1 nano watt level, the sensitivity is obviously insufficient. Therefore, how to detect the microwave signal with lower intensity is a technical problem to be solved urgently by those skilled in the art.
Disclosure of Invention
(I) technical problems to be solved by the invention
The technical problem solved by the invention is as follows: how to provide a microwave detection device capable of detecting microwaves with low signal intensity.
(II) the technical scheme adopted by the invention
In order to solve the technical problems, the invention adopts the following technical scheme:
a microwave detection apparatus comprising:
the signal receiving module is used for receiving the microwave signal and converting the microwave signal into an alternating current signal;
and the magnetoelectric conversion module comprises a magnetic tunnel junction, and the magnetic tunnel junction is used for converting the alternating current signal into a direct current signal.
Preferably, the signal receiving module includes an antenna and an impedance matching circuit connected to the antenna.
Preferably, the magnetoelectric conversion module further includes:
and the magnetic field generating device is used for generating magnetic fields with different intensities so as to adjust the magnetic moment direction of the magnetic tunnel junction.
Preferably, the magnetic tunnel junction includes a fixed magnetic layer, a non-magnetic isolation layer, and a magnetic free layer, which are sequentially stacked.
Preferably, the magnetic tunnel junction further comprises;
a first electrode layer disposed on and in electrical contact with the magnetic free layer;
and the second electrode layer is arranged on the fixed magnetic layer and is electrically contacted with the fixed magnetic layer.
Preferably, the magnetic tunnel junction further includes an insulating layer, the insulating layer is disposed between the first electrode layer and the magnetic free layer, a convex pillar is formed on a surface of the first electrode layer facing the magnetic free layer, the insulating layer has a through hole, and the convex pillar is disposed through the through hole and electrically contacts the magnetic free layer.
Preferably, the number of the convex columns and the number of the through holes are both multiple.
Preferably, the microwave detection device further comprises:
the boosting module is used for amplifying the direct current signal;
and the display module is used for displaying the amplified direct current signal.
Preferably, the display module includes a single chip microcomputer and a display screen, and the single chip microcomputer is used for acquiring the amplified direct current signal and displaying the acquired direct current signal through the display screen.
Preferably, the microwave detection device further comprises:
and the current adjusting module is used for adjusting the current of the magnetic field generating device so as to enable the magnetic field generating device to generate magnetic fields with different strengths.
(III) advantageous effects
The invention discloses a microwave detection device, which has the following advantages and beneficial effects compared with the prior art:
the microwave detection device has the advantages of being small in structure, wide in working frequency range, high in efficiency in unit area range, capable of detecting microwaves with low signal intensity, simple to manufacture, low in cost, adjustable in broadband and the like compared with a detection device of a semiconductor.
Drawings
Fig. 1 is a schematic block diagram of a microwave detection device according to a first embodiment of the present invention;
FIG. 2 is a block diagram of a magnetic tunnel junction according to a first embodiment of the present invention;
FIG. 3 is a block diagram of a magnetic tunnel junction of a second embodiment of the present invention;
FIG. 4 is a block diagram of a magnetic tunnel junction of a third embodiment of the present invention;
FIG. 5 is a diagram of experimental test results of a microwave detection device according to an embodiment of the present invention;
FIG. 6 is a diagram of another experimental test result of a microwave detection device according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application so that others skilled in the art will be able to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated. Like reference numerals may be used to refer to like elements throughout the specification and drawings.
As shown in fig. 1, the microwave detection apparatus according to the embodiment of the present invention includes a signal receiving module 10 and a magnetoelectric conversion module 20, where the signal receiving module 10 is configured to receive a microwave signal and convert the microwave signal into an ac signal, and the magnetoelectric conversion module 20 includes a magnetic tunnel junction, and the magnetic tunnel junction is configured to convert the ac signal into a dc signal, so as to complete detection of the microwave signal.
Specifically, as shown in fig. 2, the magnetic tunnel junction includes a fixed magnetic layer 211, a nonmagnetic spacer layer 212, and a magnetic free layer 213 stacked in sequence, wherein the direction of the magnetic moment of the fixed magnetic layer 211 is fixed, the direction of the magnetic moment of the magnetic free layer 213 can be changed under the control of current or magnetic field, and when the directions of the magnetic moments of the fixed magnetic layer 211 and the magnetic free layer 213 are parallel, electrons can tunnel through the barrier layer more easily, in which state the device has a relatively low resistance, and when the directions of the magnetic moments of the fixed magnetic layer 211 and the magnetic free layer 213 are anti-parallel, electrons can hardly tunnel through the barrier layer, in which state the device has a relatively high resistance. Further, the magnetoelectric conversion module further includes a magnetic field generating device for generating magnetic fields of different intensities to adjust the magnetic moment direction of the magnetic tunnel junction, that is, to regulate the magnetic moment direction of the magnetic free layer 213. As a preferred embodiment, the magnetic field generating means can use a common coil magnetic field, which is well known in the art and will not be described herein.
Further, the fixed magnetic layer 211 is preferably an in-plane magnetized ferromagnetic layer or a half-metal magnetic layer, and the material may be Co40Fe40B20The thickness is 2 nm; the material of the nonmagnetic spacer layer 212 is preferably MgO with a thickness of 0.8 nm. Furthermore, the magnetic field generating device provided by the application is subjected to Maxwell simulation, namely, the current and the magnetic field are calibrated, and the magnetic field is adjustable, so that the device can correspond to different frequency bands.
As a preferred embodiment, the signal receiving module 10 includes an antenna and an impedance matching circuit connected to the antenna. The antenna is used for receiving microwave signals in space, so that electromagnetic waves in space are converted into guided waves in a transmission line, i.e. alternating current signals. The impedance matching circuit preferably adopts a T-shaped impedance circuit, and the T-shaped impedance circuit adjusts the sizes of the resistor, the inductor and the capacitor so that the antenna achieves impedance matching. Furthermore, because the magnetic field of the magnetic tunnel junction responding to each frequency point is different in size, the magnetic field affects the frequency of the magnetic tunnel junction responding, the magnetic tunnel junction works under the optimal condition by adjusting the size of the magnetic field, an alternating current signal is fed into the magnetic tunnel junction, and the alternating current signal is converted into a direct current signal under the action of the spin transfer torque of the magnetic tunnel junction, so that the detection of the microwave signal is completed. As a preferred embodiment, the antenna may be a low-profile antenna such as a fractal antenna, a microstrip antenna, a PCB antenna, or the like.
Further, as shown in fig. 3, the magnetic tunnel junction of the present application further includes a first electrode layer 214 and a second electrode layer 215, the first electrode layer 214 is disposed on the magnetic free layer 213 and electrically contacts with the magnetic free layer 213, and as a preferred embodiment, the first electrode layer 214 is attached on a surface of the magnetic free layer 213 facing away from the non-magnetic isolation layer 212. The second electrode layer 215 is disposed on the fixed magnetic layer 211 and electrically contacts the fixed magnetic layer 211, and as a preferred embodiment, the second electrode layer 215 is attached on a surface of the fixed magnetic layer 211 facing away from the non-magnetic isolation layer 212. The provision of the first electrode layer 214 and the second electrode layer 215 facilitates the feeding of an alternating current signal into the magnetic tunnel junction.
Further, as shown in fig. 4, the magnetic tunnel junction further includes an insulating layer 216, the insulating layer 216 is disposed between the first electrode layer 214 and the magnetic free layer 213, a convex pillar 214a is formed on a surface of the first electrode layer 214 facing the magnetic free layer 213, a through hole is formed on the insulating layer 216, and the convex pillar 214a penetrates through the through hole and is electrically contacted with the magnetic free layer 213. Through setting up projection 214a and realizing the point contact between first electrode layer 214 and the magnetism free layer 213, for directly with first electrode layer 214 with magnetism free layer 213 face contact, the point contact mode is more favorable to realizing the synchronization of injecting the microwave signal, and the microwave linewidth of point contact output is narrower, and the single-frequency is good, can with the better synchronization of outside single signal. Preferably, the number of the convex columns 214a and the number of the through holes are both multiple, for example, both are two. The diameter of the through hole is 30 nm-50 nm. If a plurality of through holes are provided, the pitch between the through holes is 50nm to 80 nm.
Further, the microwave detection device of the present application further includes a voltage boosting module 30 and a display module 40, where the voltage boosting module 30 is configured to amplify the dc signal, and the display module 40 is configured to display the amplified dc signal. Specifically, the boosting module 30 employs a voltage doubling circuit, and the dc signal is amplified by the voltage doubling circuit. The display module 40 includes a single chip microcomputer and a display screen, and the single chip microcomputer collects the direct current signal and displays the collected signal through the display screen.
It should be noted that the microwave detection device of the present application further includes a bottom plate 60, where the bottom plate 60 is a high-frequency rf plate, for example, an R04350 rf dielectric plate, and the signal receiving module 10, the magnetoelectric conversion module 20, the voltage boosting module 30, and the display module 40 described above are all disposed on the high-frequency rf plate.
Further, in order to realize the degree of automation of the microwave detection device, the magnetic field generation device of the present application further includes a current adjustment module, and the current adjustment module is used for automatically adjusting the current magnitude of the magnetic field generation device to generate magnetic fields of different magnitudes, so that the magnetic tunnel junction can be in an optimal working state when facing microwave signals of different frequencies. When facing microwaves with unknown frequency in the space, in order to effectively detect microwave signals, the current generally needs to be manually adjusted for many times to generate a magnetic field with a proper size, so that the microwave can be effectively detected by the magnetic tunnel junction, and more manpower consumption can be caused. Therefore, the current adjusting module is arranged to automatically adjust the current, specifically, the current can be divided into a plurality of sections, when the microwave is detected, the current of the magnetic field generating device is adjusted according to a certain sequence, for example, the current is adjusted from small to large, so that the current is sequentially positioned in each section, whether a direct current signal is generated by the magnetic tunnel junction is detected, if the direct current signal is generated, the corresponding current section is a section to be selected, the section to be selected is further divided into a plurality of small sections, the current is positioned in different small sections, and the intensity of the direct current signal is detected, wherein the current section corresponding to the maximum intensity of the direct current signal is an optimal section, that is, the current of the magnetic field generating device is adjusted to any value in the optimal section, and effective measurement of the microwave signal can be realized. It should be further noted that the optimal section may be further divided to find the most suitable current, which is not limited herein. The adjusting process can be automatically realized through modes such as program design and the like, the current is not required to be manually adjusted, and the automation degree of the microwave detection device is further improved.
Because the threshold voltage of the diode is mostly 0.4-0.7V, the tunnel junction has no threshold voltage, and the detection of lower signals can be realized. In order to verify that the microwave detection device can detect the microwave signal with low intensity, experimental measurement is carried out. The intensity of the microwave signal is-20 dBm power, the frequency range of the microwave signal is 10-5000 MHz, the microwave with the intensity can not be detected by a traditional diode, the size range of the magnetic field is-800 Oe, the detection result is shown in figure 5, according to a test chart of the relation between the direct current voltage signal and the microwave frequency, when the alternating current signal passes through the tunnel junction, the alternating current signal and spin oscillation generated by the spin transfer torque effect in the magnetic tunnel junction generate resonance, so that the alternating current signal is converted into the direct current signal, the output of the direct current voltage signal can be detected, and the microwave detector can be used as a basis for realizing the microwave detector. Meanwhile, according to the test result, when the magnetic fields are in different sizes, microwave signals with different frequencies can be detected. For example, when the magnetic field is 400Oe, microwave signals with the frequency of 2000MHz can be effectively detected.
The application provides a microwave detection device compares the detecting element structure of semiconductor little a lot, and the operating frequency range is wide, and unit area within range is efficient, can realize surveying the microwave of low signal strength to have characteristics such as simple manufacture, with low costs, the wide band is adjustable.
Although a few embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents, and that such changes and modifications are intended to be within the scope of the invention.
Claims (10)
1. A microwave detection device, comprising:
the signal receiving module is used for receiving the microwave signal and converting the microwave signal into an alternating current signal;
and the magnetoelectric conversion module comprises a magnetic tunnel junction, and the magnetic tunnel junction is used for converting the alternating current signal into a direct current signal.
2. A microwave detection apparatus according to claim 1 wherein the signal receiving module includes an antenna and an impedance matching circuit connected to the antenna.
3. A microwave detection apparatus according to claim 2, wherein the magnetoelectric conversion module further includes:
and the magnetic field generating device is used for generating magnetic fields with different intensities so as to adjust the magnetic moment direction of the magnetic tunnel junction.
4. A microwave detection device according to claim 2 wherein the magnetic tunnel junction comprises a fixed magnetic layer, a non-magnetic isolation layer and a magnetic free layer, in sequential stacked arrangement.
5. A microwave detection device according to claim 4 wherein the magnetic tunnel junction further comprises;
a first electrode layer disposed on and in electrical contact with the magnetic free layer;
and the second electrode layer is arranged on the fixed magnetic layer and is electrically contacted with the fixed magnetic layer.
6. A microwave detecting device according to claim 5, wherein the magnetic tunnel junction further includes an insulating layer disposed between the first electrode layer and the magnetic free layer, a convex pillar is formed on a surface of the first electrode layer facing the magnetic free layer, the insulating layer has a through hole, and the convex pillar is disposed through the through hole and electrically contacted with the magnetic free layer.
7. A microwave detection device according to claim 6 wherein the number of posts and through holes is plural.
8. A microwave detection apparatus according to claim 1, further comprising:
the boosting module is used for amplifying the direct current signal;
and the display module is used for displaying the amplified direct current signal.
9. The microwave detection device according to claim 8, wherein the display module comprises a single chip microcomputer and a display screen, and the single chip microcomputer is configured to collect the amplified direct current signal and display the collected direct current signal through the display screen.
10. A microwave detection apparatus according to claim 3, further comprising:
and the current adjusting module is used for adjusting the current of the magnetic field generating device so as to enable the magnetic field generating device to generate magnetic fields with different strengths.
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|---|---|---|---|
| CN202010102072.2A CN113281574A (en) | 2020-02-19 | 2020-02-19 | Microwave detection device |
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| CN202010102072.2A CN113281574A (en) | 2020-02-19 | 2020-02-19 | Microwave detection device |
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| WO2007145335A1 (en) * | 2006-06-16 | 2007-12-21 | National Institute Of Advanced Industrial Science And Technology | Magnetic head, solid-state element memory and magnetic sensor |
| WO2009047857A1 (en) * | 2007-10-12 | 2009-04-16 | Canon Anelva Corporation | Amplifier using magnetoresistive element |
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| CN110726736A (en) * | 2019-10-18 | 2020-01-24 | 南京大学 | Passive low-power-consumption microwave detection method and device and preparation method thereof |
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