CN113271692A - Ceramic heating element, method, infrared heating pipe and equipment - Google Patents
Ceramic heating element, method, infrared heating pipe and equipment Download PDFInfo
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- CN113271692A CN113271692A CN202110475532.0A CN202110475532A CN113271692A CN 113271692 A CN113271692 A CN 113271692A CN 202110475532 A CN202110475532 A CN 202110475532A CN 113271692 A CN113271692 A CN 113271692A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
Abstract
The invention provides a ceramic heating element, a method, an infrared heating pipe and equipment, comprising the following steps: a ceramic substrate; a conductive layer on one or both sides of the ceramic substrate; a coating layer completely covering the heat conductive layer; a transmission enhancement layer located outside the cladding layer. The ceramic heating body fully utilizes the structural strength of the ceramic substrate, and has good heat resistance and oxidation resistance; the production and processing technology can be simplified, the processing and manufacturing cost is saved, the working temperature range is increased, and the thermal shock resistance is enhanced.
Description
Technical Field
The invention relates to the field of heating equipment, in particular to a ceramic heating element, a method for manufacturing the ceramic heating element, an infrared heating pipe using the ceramic heating element and equipment using the ceramic heating element.
Background
PTC is an English abbreviation for "Positive Temperature Coefficient". The material is a novel thermistor material, and the main application of the material can be divided into two categories of switch and heating. The PTC heater adopts a PTCR thermal sensitive ceramic element, is formed by combining a plurality of single sheets and then bonding the single sheets with corrugated heat dissipation aluminum strips through high-temperature glue, and has the characteristics of small thermal resistance and high heat exchange efficiency. However, the biggest problem is that the safety is poor, when the blower is blocked due to faults, the power of the PTC heater can be automatically and rapidly reduced because the PTC heater cannot fully dissipate heat, and the surface temperature of the heater is maintained to be about the Curie temperature (generally 220 ℃), so that the surface of the electric heating tube heater is red. And the starting current is usually 5-6 times of the working current, so that the line fire caused by overlarge starting current during starting is easily caused, and the power regulation and control cannot be carried out at all, so that the whole market trend of the current intelligent control cannot be met.
The Metal ceramic Heater, MCH is the english abbreviation of "Metal Ceramics Heater", and MCH ceramic Heater is a novel high-efficient environmental protection and energy saving ceramic heating element, compares PTC ceramic Heater, has saving 20 ~ 30% electric energy under the same heating effect condition. The ceramic heating body formed by co-sintering the alumina ceramic and the metal has the advantages of corrosion resistance, high temperature resistance, long service life, high efficiency, energy conservation, uniform temperature, good heat conducting property, high heat compensation speed and the like, does not contain harmful substances such as lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyl, polybrominated diphenyl ether and the like, and meets the environmental protection requirements of European Union RoHS and the like. However, the processing technology is complex, the manufacturing cost is high, higher energy consumption is generated in the processing process, the highest temperature is generally 400-.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a ceramic heating element, which can fully utilize the structural strength of a ceramic substrate and has good heat resistance and oxidation resistance; the production and processing technology can be simplified, the processing and manufacturing cost is saved, the working temperature range is increased, and the thermal shock resistance is enhanced.
The invention provides a ceramic heating element, comprising: a ceramic substrate; a conductive layer on one or both sides of the ceramic substrate; a coating layer completely covering the heat conductive layer; a transmission enhancement layer located outside the cladding layer.
Preferably, the coating layer has a microporous structure inside and a porous and non-penetrating rough structure on the surface.
Preferably, the conductive layer is linear or planar.
Preferably, the ceramic substrate has a stacked structure of one layer or more than two layers.
Preferably, the ceramic substrate is one or more of alumina, silicon carbide, aluminum nitride, iron oxide, manganese oxide, zirconia, cordierite and mullite.
Preferably, the conductive layer is one or more of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, lanthanide metals and oxides, nitrides and carbides thereof; the thickness of the conductive layer is 50 nm to 5000 nm.
Preferably, the coating layer is the same or same system material as the substrate single-layer ceramic material; the thickness of the coating layer is 1000 nm to 5000 nm.
Preferably, the emission enhancement layer is one or more of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, and oxides of lanthanide metals, or carbon and graphene; the emission enhancement layer has a thickness of 20 nm to 2000 nm.
The invention also provides a method for manufacturing the ceramic heating element; the method comprises the following steps: preparing the conductive layer by physical vapor deposition; preparing the coating layer by physical vapor deposition; the emission enhancement layer is made by nano-coating or plating or physical vapor deposition.
Preferably, in the step of physical vapor deposition of the coating layer, PVD doping is performed with non-metallic elements of carbon, phosphorus and sulfur or one or more metallic elements of iron, nickel, copper and zinc, so that the doping material and the ceramic material are deposited on the surface of the conductive layer together; after the deposition is finished, the ceramic heating element with the coating layer is heated or pickled at high temperature in an oxidation environment to remove the doping layer on the surface, a microporous structure is formed inside the coating layer, and a porous non-penetrating rough structure is formed on the surface.
Preferably, the conducting layer is silk-screened on the front surface and the back surface or one surface of the ceramic substrate; then attaching a coating layer on the front side or the back side of the ceramic substrate to coat the conductive layer, and adding the uniformly stirred and mixed hyperfine nano foaming agent into the coating layer; and (3) carrying out medium-low temperature binder removal, then carrying out high-temperature sintering, expanding a foaming agent in the coating layer and releasing gas, forming a microporous structure in the coating layer, and forming a porous non-penetrating rough structure on the surface.
The invention also provides an infrared heating pipe which is provided with the ceramic heating body.
The invention also provides equipment with the ceramic heating body.
Preferably, the equipment is heating equipment, drying equipment, infrared physiotherapy equipment, infrared directional emission equipment, infrared sterilization equipment, equipment or instrument that need produce the middle and far infrared of broad spectrum.
The invention has the beneficial effects that: compared with PTC or MCH ceramic heating elements, the production and processing technology is simplified, the processing and manufacturing cost is saved, the working temperature range is increased, and the thermal shock resistance is enhanced. According to the invention, the nano-resistor heat conduction layer and the coating layer are deposited on the surface of the single-layer ceramic plate material by a Physical Vapor Deposition (PVD) method, and the coating layer completely covers the conductive layer, so that the resistor material is effectively protected, the insulating property is improved, the internal bubble rate is reduced, and the internal density is increased. The ceramic substrate treated by the PVD vapor deposition method does not need to be subjected to high-temperature sintering treatment, so that energy is saved, the manufacturing process is simplified, and the production and manufacturing flow is accelerated. The invention adopts a processing mode of carrying out PVD deposition on the surface of the single-layer ceramic plate, solves the problem that the stress of the MCH multilayer ceramic heating plate can not be fully released, reduces the bubble generation rate and the possibility of adhesive residue, can effectively improve the structural strength of the ceramic substrate and eliminates the thermal stress. The invention shortens the heat conduction channel between the heating resistance layer and the surface infrared emission layer, reduces the thermal resistance, ensures that the emitted heat is easier to transfer to the radiation enhancement layer, reduces the specific heat capacity of the system, and reduces the waiting time from the system starting to the system stable output. By the PVD deposition method, the thickness of the coating can be effectively controlled, the precision can reach the nanometer level, the yield of the PVD method is high, the product consistency is good, the heat effect is improved, the production cost is reduced, and the rejection rate is reduced. Compared with the MCH multilayer ceramic plate, the single-layer ceramic plate deposits the resistor, and the resistor material is on the outer layer, so that the rapid temperature rise and the rapid heat dissipation can be realized, and the internal temperature gradient is reduced. The invention coats the emission enhancement layer outside the cladding layer, the emission outer coating is made of nano radiation enhancement material and is close to the resistance heating layer, the temperature difference between the two layers is small, and the emission efficiency can be obviously improved; the radiation characteristic of the non-radiation surface of the heating material is weakened by coating or plating the surface of the non-radiation surface of the single-layer ceramic heating material, so that the energy of useless radiation loss is reduced, and the effective radiation proportion of a radiation source is improved; the invention is not limited by the shape of the substrate material, and can be made into various shapes, such as long plate shape, square shape, polygon shape, or various solid polyhedron shapes, and the substrate material can be one or a mixture of more of alumina, silicon carbide, aluminum nitride, ferric oxide, manganese oxide, zirconia, cordierite and mullite. The invention makes the internal heat more uniform, the temperature of a certain point is higher, and the temperature of a certain point is lower, and the heat is transferred from the outside to the inside of the ceramic body, thereby improving the reliability. The invention can produce a plurality of porous non-penetrating structures on the surface of the heating element, thereby increasing the surface roughness and the infrared radiation characteristic.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of a ceramic heating element according to a first embodiment of the present invention;
FIG. 2 is a schematic view of a ceramic heating element according to a second embodiment of the present invention;
FIG. 3 is a schematic view of a ceramic heating element according to a third embodiment of the present invention;
FIG. 4 is a schematic view of a ceramic heating element according to a fourth embodiment of the present invention;
FIG. 5 is a schematic view of a ceramic heating element according to fifth embodiment of the present invention; .
Description of reference numerals:
11. example one such single layer ceramic sheet material;
12. the conductive layer of embodiment one;
13. the conductive resistive cladding layer of embodiment one;
14. example one such nano-coated or plated emission enhancement layer;
21. example two the single layer ceramic sheet material;
22. the conductive layer of embodiment two;
23. the conductive resistive cladding layer of embodiment two;
24. example two the nano-coated or plated emission enhancement layer;
31. example three the single layer ceramic sheet material;
32. the conductive layer of embodiment three;
33. the conductive resistive cladding layer of embodiment three;
34. example three the nano-coated or plated emission enhancement layer;
41. example four the ceramic plate material;
42. embodiment four the resistive conducting layer;
43. example four the electrically conductive resistive cladding layer;
44. example four the nano-coated or plated emission enhancement layer;
51. example five the ceramic plate material;
52. the resistive conducting layer of example five;
53. the conductive resistive cladding layer of example five;
54. example five an emission enhancement layer of the nano-coating or plating described.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the technical solutions in the embodiments of the present invention will be clearly described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The appearances of the phrases "first," "second," and "third," or the like, in the specification, claims, and figures are not necessarily all referring to the particular order in which they are presented. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or modules is not limited to the steps or modules listed but may alternatively include other steps or modules not listed or inherent to such process, method, article, or apparatus.
The first embodiment,
As shown in fig. 1, a ceramic heating element according to a first embodiment of the present invention; the ceramic substrate 11 is a single-layer ceramic material, preferably made of aluminum oxide, or may be a simple substance such as silicon dioxide, aluminum nitride, silicon carbide, zirconia, cordierite, mullite, or a composite material thereof;
the resistive conducting layer 12 may be made of one or more of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, lanthanide metals, and oxides, nitrides, carbides, and the like of the metals 12. The conductive layer 12 is typically controlled to be between 50 nm and 5000 nm, depending on the particular requirements. (ii) a
The coating layer 13 is made of a material which is the same as or the same as the material of the ceramic substrate 11, preferably aluminum oxide, or simple substances such as silicon dioxide, aluminum nitride, silicon carbide, zirconia, cordierite, mullite and the like or composite materials thereof; the coating layer 13 is generally controlled to be between 1000 nm and 5000 nm, depending on the specific requirements.
The emission enhancement layer 14 may be made of one or more selected from iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, oxides of lanthanide metals, or carbon and graphene. The emission enhancement layer 14 is typically controlled to be between 20 nm and 2000 nm, depending on the particular needs.
Example II,
As shown in FIG. 2, a ceramic heating element according to the second embodiment of the present invention; the ceramic substrate 21 is a single-layer ceramic material, preferably made of aluminum oxide, or may be a simple substance such as silicon dioxide, aluminum nitride, silicon carbide, zirconia, cordierite, mullite, or a composite material thereof;
the resistive conducting layer 22, the conducting layer 22 can be made of one or more of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, lanthanide metals, and oxides, nitrides, carbides, etc.; the conductive layer 22 is typically controlled to be between 50 nm and 5000 nm, depending on the specific requirements.
The coating layer 23 of the conductive resistor is made of a material which is the same as or same as the single-layer ceramic material of the substrate 21, preferably aluminum oxide, or simple substances such as silicon dioxide, aluminum nitride, silicon carbide, zirconium oxide, cordierite, mullite and the like or composite materials thereof;
in PVD (vapor deposition), PVD doping is performed with one or more of non-metallic elements such as carbon, phosphorus, and sulfur, or metallic elements such as iron, nickel, copper, and zinc, so that the substance is deposited on the surface of the conductive layer 22 together with the ceramic material.
After the deposition is completed, the ceramic heating element with the clad layer 23 is heated at a high temperature or subjected to acid washing in an oxidizing atmosphere to remove the surface doped layer, thereby obtaining a porous structure of the clad layer 23 as shown in the figure. The coating 23 is typically controlled to be between 1000 nm and 5000 nm, depending on the particular requirements.
The emission enhancement layer 24 may be made of one or more of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, and oxides of lanthanide metals, or carbon and graphene. The emission enhancement layer 24 is typically controlled to be between 20 nm and 2000 nm, depending on the particular needs.
The working principle is as follows:
an electric current is passed through the conductive layer 22 on the single-layered ceramic substrate 21 to convert electric energy into thermal energy.
A portion of the heat on the conductive layer 22 is conducted to the single-layered ceramic substrate 21, driving the single-layered ceramic substrate 21 to increase in temperature. This temperature will be partly transferred back to the conductive layer 22 and partly to the right conductive layer 22 and cladding layer 23 of the structure, and quickly transferred from the cladding layer 23 to the right emission enhancement layer 24.
The heat on the emission enhancement layer 24 can increase the air contact area through the porous micro-nano structure, and the air convection effect is enlarged. Or the infrared radiation characteristic can be enhanced by the porous micro-nano structure, and the part of heat can be easily diffused.
Example III,
As shown in fig. 3, a ceramic heating element according to a third embodiment of the present invention; the ceramic substrate 31 is a single-layer ceramic material, preferably made of alumina, or may be a simple substance or a composite material thereof, such as silicon dioxide, aluminum nitride, silicon carbide, zirconia, cordierite, mullite, or the like;
the resistive conducting layer 32, the conducting layer 32 can be made of one or more of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, lanthanide metals, and oxides, nitrides, carbides, etc.; the conductive layer 32 is typically controlled to be between 50 nm and 5000 nm, depending on the particular requirements.
The coating layer 33 of the conductive resistor is made of a material which is the same as or same as the single-layer ceramic material of the substrate 31, preferably aluminum oxide, or simple substances such as silicon dioxide, aluminum nitride, silicon carbide, zirconium oxide, cordierite, mullite and the like or composite materials thereof;
in PVD (vapor deposition), PVD doping is performed with one or more of non-metallic elements such as carbon, phosphorus, and sulfur, or metallic elements such as iron, nickel, copper, and zinc, so that the substance is deposited on the surface of the conductive layer 32 together with the ceramic material.
After the deposition is completed, the ceramic heating element with the clad layer 33 is heated at a high temperature or subjected to acid washing in an oxidizing atmosphere to remove the surface doped layer, thereby obtaining a porous structure of the clad layer 33 as shown in the drawing. The coating 33 is typically controlled to be between 1000 nm and 5000 nm, depending on the particular requirements.
The emission enhancement layer 34 may be made of one or more of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, and oxides of lanthanide metals, or carbon and graphene. The emission enhancement layer 34 is typically controlled to be between 20 nm and 2000 nm, depending on the particular needs.
The biggest difference between this embodiment and the second embodiment is that the conductive layer 22 deposited by linear physical vapor deposition as described in the second embodiment can be diffused into a whole area of the heat generating layer 32. Thereby achieving a more uniform heat distribution.
Example four,
As shown in fig. 4, a ceramic heating element according to the fourth embodiment of the present invention;
the ceramic substrate 41 is preferably made of aluminum oxide, and may also be a simple substance such as silicon dioxide, aluminum nitride, silicon carbide, zirconia, cordierite, mullite or a composite material thereof; the initial state was a cast sheet.
The resistive conducting layer 42, the conducting layer 42 can be made of one or more ultrafine powders of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, lanthanide metals, and oxides, nitrides, carbides, etc.; the layer is typically controlled to be between 1000 nm and 5000 nm, depending on the particular requirements. The slurry is in an initial state and is printed on the ceramic material casting substrate 41 through silk screen printing.
The structure of the ceramic substrate 41 and the resistive conductive layer 42 can be regarded as one body, and the product can be used as one body or as a stack of a plurality of such bodies.
The material of the coating layer 43 of the conductive resistor is preferably alumina, and may also be a simple substance or a composite material thereof, such as silicon dioxide, aluminum nitride, silicon carbide, zirconium oxide, cordierite, mullite, or the like, which is the same as or identical to the single-layer ceramic material of the substrate 41.
The material is added with the hyperfine nano foaming agent which is evenly stirred and mixed before the tape casting process. The coating 43 is typically controlled to be between 1000 nm and 5000 nm, depending on the particular requirements.
The emission enhancement layer 44 may be made of one or more of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, and oxides of lanthanide metals, or carbon and graphene. The emission enhancement layer 44 is typically controlled to be between 20 nm and 2000 nm, depending on the particular needs. The surface of the clad layer 43 is subjected to PVD (vapor deposition).
Example four the structure was fabricated as follows:
and silk-screening the resistance conducting layers 42 on the front and back surfaces or one surface of the ceramic substrate 41.
Then, a coating layer 43 is attached to the front and back surfaces or one surface of the ceramic substrate 41 to coat the resistive conductive layer 42.
And (4) carrying out an isostatic pressing process on the finished product obtained by the process.
After the completion, the ceramic heating element raw material which completes the isostatic pressing process is put into a high-temperature furnace required by the material for medium and low temperature glue discharging, and then high-temperature sintering is carried out.
During the binder removal and high temperature sintering process, the foaming agent in the coating layer 43 expands and releases gas, causing internal voids. The cavities on the surface can partially shrink in the high-temperature sintering stage, but still can keep the hole state and collapse into a micro-nano structure.
The foaming agent inside will expand at the stage of binder removal and high temperature and form a binder removal channel inside the coating 43. The pipeline loses the state of the holes and the glue discharging channels when one part of the pipeline collapses in the later stage of high-temperature sintering, and the other part of the holes and the glue discharging channels do not completely collapse to form small micro-nano non-penetrating holes. This structure does not provide a significant impediment to the thermal conductivity of the cladding layer 43, since the internal voids and the binder removal channels are mostly collapsed or reduced to a small extent.
Moreover, the structural thickness of the cladding layer 43 will be extruded to a thickness of 100-2000 nm due to the presence of the front isostatic pressing process. A very thin layer is formed.
After the sintering of the main structure is completed. The host structure is placed into a PVD process and an emission enhancement layer 44 is grown onto the host structure by vapor deposition.
The working principle is as follows:
an electric current is passed through the resistive conductive layer 42 on the ceramic substrate 41 to convert the electrical energy into thermal energy.
Resistive conductive layer 42 can quickly conduct heat to cladding layer 43 by conduction. Since the cladding layer 43 is thin and the thermal resistance is small, this portion of heat is rapidly transferred to the emission enhancement layer 44 through the cladding layer 43.
A portion of the heat in conductive layer 42 is conducted to ceramic substrate 41, driving ceramic substrate 41 to increase in temperature. This temperature is transferred back to resistive conducting layer 42 in one part and to the right resistive conducting layer 42 and cladding layer 43 of the structure, where it is rapidly transferred from cladding layer 43 to the right emission enhancement layer 44.
The heat on the emission enhancement layer 44 can increase the air contact area through the porous micro-nano structure, and the air convection effect is enlarged. Or the infrared radiation characteristic can be enhanced by the porous micro-nano structure, and the part of heat can be easily diffused.
EXAMPLE five
As shown in FIG. 5, the materials and processes of the ceramic heating element described in the fifth embodiment are the same as those of the first embodiment. Except that the ceramic substrate 51 and the resistive conductive layer 52 are compared with the fourth embodiment, a two-layer stacked structure is adopted. Of course, a stacked structure of two or more layers may be employed as necessary.
EXAMPLE six
The embodiment also provides an infrared heating pipe which is provided with the ceramic heating body. The infrared heating pipe is a product which can be produced and sold independently.
The infrared heating pipe can be applied to heating equipment, drying equipment, infrared physiotherapy equipment, infrared directional emission equipment, infrared sterilization equipment and various equipment or instruments which need to generate broad-spectrum middle and far infrared rays.
EXAMPLE seven
The embodiment also provides a device having the ceramic heating element. The device is a product which can be produced and sold separately.
The device can be heating equipment, drying equipment, infrared physiotherapy equipment, infrared directional emission equipment, infrared sterilization equipment and various devices or instruments which need to generate broad-spectrum middle and far infrared rays.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments. In the embodiments provided in the present application, it should be understood that the disclosed apparatus may be implemented in other manners. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the modules is merely a logical division, and in actual implementation, there may be other divisions, for example, multiple modules or components may be combined or integrated into another system, or some features may be omitted, or not implemented. Each functional module in the embodiments of the present invention may be integrated into one processing module, or each module may exist alone physically, or two or more modules are integrated into one module.
The invention is not limited to the embodiments discussed above. The foregoing description of the specific embodiments is intended to describe and explain the principles of the invention. Obvious modifications or alterations based on the teachings of the present invention should also be considered as falling within the scope of the present invention. The foregoing detailed description is provided to disclose the best mode of practicing the invention, and also to enable a person skilled in the art to utilize the invention in various embodiments and with various alternatives for carrying out the invention.
Claims (15)
1. A ceramic heat-generating body characterized by comprising:
a ceramic substrate;
a conductive layer on one or both sides of the ceramic substrate;
a coating layer completely covering the heat conductive layer;
a transmission enhancement layer located outside the cladding layer.
2. A ceramic heat-generating body as described in claim 1,
the coating layer is internally provided with a microporous structure, and the surface of the coating layer is provided with a porous non-penetrating rough structure.
3. A ceramic heat-generating body as described in claim 1,
the conductive layer is linear or planar.
4. A ceramic heat-generating body as described in claim 1,
the ceramic substrate is of a one-layer or more than two-layer stacking structure.
5. A ceramic heat-generating body as described in claim 1,
the ceramic substrate is one or a mixture of more of alumina, silicon carbide, aluminum nitride, ferric oxide, manganese oxide, zirconia, cordierite and mullite.
6. A ceramic heat-generating body as described in claim 1,
the conducting layer is one or more of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, lanthanide metals and oxides, nitrides and carbides thereof;
the thickness of the conductive layer is 50 nm to 5000 nm.
7. A ceramic heat-generating body as described in claim 1,
the coating layer is the same as or the same as the substrate single-layer ceramic material;
the thickness of the coating layer is 1000 nm to 5000 nm.
8. A ceramic heat-generating body as described in claim 1,
the emission enhancement layer is one or more of oxides of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium and lanthanide metals or carbon and graphene elements;
the emission enhancement layer has a thickness of 20 nm to 2000 nm.
9. A method for producing a ceramic heat-generating body described in any one of claims 1 to 8; the method comprises the following steps:
preparing the conductive layer by physical vapor deposition;
preparing the coating layer by physical vapor deposition;
the emission enhancement layer is made by nano-coating or plating or physical vapor deposition.
10. The method according to claim 9,
in the step of physical vapor deposition of the coating layer, carrying out physical vapor deposition doping by using one or more of carbon, phosphorus and sulfur non-metal elements or iron, nickel, copper and zinc metal elements, so that a doping substance and a ceramic material are deposited on the surface of the conducting layer;
after the deposition is finished, the ceramic heating element with the coating layer is heated or pickled at high temperature in an oxidation environment to remove the doping layer on the surface, a microporous structure is formed inside the coating layer, and a porous non-penetrating rough structure is formed on the surface.
11. The method according to claim 9,
adding an ultrafine nano foaming agent which is uniformly stirred and mixed into the coating layer;
and (3) carrying out medium-low temperature binder removal, then carrying out high-temperature sintering, expanding a foaming agent in the coating layer and releasing gas, forming a microporous structure in the coating layer, and forming a porous non-penetrating rough structure on the surface.
12. The method according to claim 9,
silk-screen printing the conductive layer on the front and back surfaces or one surface of the ceramic substrate;
the coating layer is attached to the front side or the back side of the ceramic substrate to coat the conductive layer.
13. An infrared heating tube characterized by having a ceramic heating element as recited in any one of claims 1 to 8.
14. An apparatus characterized by having a ceramic heat-generating body as recited in any one of claims 1 to 8.
15. The apparatus of claim 14,
the equipment comprises heating equipment, drying equipment, infrared physiotherapy equipment, infrared directional emission equipment and infrared sterilization equipment.
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