CN113257941A - Two-dimensional semiconductor photovoltaic polarization detector and preparation method thereof - Google Patents
Two-dimensional semiconductor photovoltaic polarization detector and preparation method thereof Download PDFInfo
- Publication number
- CN113257941A CN113257941A CN202110524757.0A CN202110524757A CN113257941A CN 113257941 A CN113257941 A CN 113257941A CN 202110524757 A CN202110524757 A CN 202110524757A CN 113257941 A CN113257941 A CN 113257941A
- Authority
- CN
- China
- Prior art keywords
- zrgete
- semiconductor
- photovoltaic
- dimensional
- polarization detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010287 polarization Effects 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000001514 detection method Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- 239000013590 bulk material Substances 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 15
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 11
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 8
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000006163 transport media Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000012512 characterization method Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 238000002267 linear dichroism spectroscopy Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910021488 crystalline silicon dioxide Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides ZrGeTe4Photovoltaic polarization detector and preparation method thereof, ZrGeTe4The photovoltaic type polarization detector includes: a substrate (10); two-dimensional ZrGeTe4A semiconductor (11) formed on the substrate (10), wherein the two-dimensional ZrGeTe4The semiconductor (11) has in-plane anisotropy; a metal electrode (12) formed on the two-dimensional ZrGeTe4On the semiconductor (11). The ZrGeTe4The photovoltaic polarization detector solves the technical problem of overlarge dark current when the two-dimensional semiconductor polarization detector is used, realizes a polarization detection device without bias voltage under the condition of not sacrificing dichroic ratio, saves resources, improves the integration level, and realizes the flexibility of the deviceThe sex and the miniaturization have important significance.
Description
Technical Field
The invention relates to the field of manufacturing of photovoltaic polarization detectors, in particular to an in-plane anisotropic semiconductor ZrGeTe without external bias4A photovoltaic polarization detector and a preparation method thereof.
Background
The polarization information of light is information that cannot be distinguished by the human eye, but as such, the portion of the information carried by the polarization has been ignored.
Linear dichroism is a manifestation of the wave spectrum, which refers to the difference in absorption of polarized light with polarization directions parallel or perpendicular to the single crystal orientation. Linear dichroism has very strong practical applications such as polarization optical switching, near-field imaging and polarization detection, which have been put into practical use in the visible light band. Compared with visible light, the application of near infrared communication bands is more concerned nowadays, so that narrow bandgap semiconductors are widely concerned.
Although many two-dimensional semiconductors can achieve a high dichroic ratio, these materials share the problem that they must be biased, which is most intuitively a problem that the dark current of the device will be high, which is very disadvantageous for achieving high thermal reliability.
Disclosure of Invention
Technical problem to be solved
The invention provides an in-plane anisotropic semiconductor ZrGeTe4The photovoltaic polarization detector and the preparation method thereof are used for solving the technical problem of overlarge dark current when the two-dimensional semiconductor polarization detector is used, realize a polarization detection device without bias voltage under the condition of not sacrificing dichroic ratio, and have important significance for saving resources, improving the integration level and realizing the flexibility and miniaturization of the device.
(II) technical scheme
One aspect of the invention provides ZrGeTe4Photovoltaic type polarization detector, comprising: a substrate 10; two-dimensional ZrGeTe4A semiconductor 11 formed on the substrate 10, wherein the two-dimensional ZrGeTe4The semiconductor 11 has in-plane anisotropy; a metal electrode 12 formed on the two-dimensional ZrGeTe4On the semiconductor 11.
Optionally, the substrate 10 comprises: p-doped N-type crystal Si; SiO 22A layer formed on the P-doped N-type crystalline Si.
Optionally, the two-dimensional ZrGeTe4Of semiconductor 12The band gap is 0.89-1.39 eV.
Optionally, the work function of the metal electrode 12 is located in two dimensions ZrGeTe4Below the fermi level of the semiconductor 12.
Optionally, the ZrGeTe4Under the condition of 0 bias voltage, the detection waveband of the photovoltaic polarization detector is 360-1550 nm.
In another aspect, the invention provides ZrGeTe4The preparation method of the photovoltaic polarization detector is characterized by comprising the following steps: the bulk material ZrGeTe4Stripping the semiconductor to said two-dimensional ZrGeTe4A semiconductor 11; subjecting the two-dimensional ZrGeTe4The semiconductor 11 is transferred onto the substrate 10; in the two-dimensional ZrGeTe4PMMA is spin-coated on the semiconductor 11; etching an electrode pattern on the PMMA; manufacturing a metal electrode 12 to obtain the ZrGeTe4Photovoltaic type polarization detector.
Optionally, the bulk material ZrGeTe4The preparation method of the semiconductor comprises the following steps: preparing precursor materials of zirconium powder, germanium powder and tellurium powder according to a preset mass proportion, and packaging the precursor materials of zirconium powder, germanium powder and tellurium powder and KCl with a preset mass of a transport medium in a vacuum quartz tube; placing one end containing the precursor material in a high-temperature area, and placing the other end in a low-temperature area; the temperature rise speed of the high-temperature area is a first preset temperature rise speed; the heating speed of the low-temperature area is a second preset heating speed; the temperature rise time of the high-temperature area and the low-temperature area is first preset time, and the heat preservation time of the high-temperature area and the low-temperature area is second preset time; cooling to room temperature, taking out, and preparing the bulk material ZrGeTe4A semiconductor.
Optionally, the total mass of the precursor materials zirconium powder, germanium powder, tellurium powder and KCl is not more than 1 g.
Optionally, the first preset temperature-rising speed is greater than the second preset temperature-rising speed.
(III) advantageous effects
ZrGeTe provided by the invention4The photovoltaic polarization detector does not need external source-drain voltage during working, has great significance for the development of near-infrared polarization detection and resource-saving photovoltaic photodetectors, and solves the problem that most two-dimensional semiconductors have large dark currentThe method improves the thermal reliability of the device and plays an important role in improving the detection rate of the photoelectric device. And the device with the nanometer thickness has great significance for the integration flexibility of the device, and is more beneficial to reducing the volume of the photoelectric device so as to solve the problem of the integration flexibility of the device. The device can be applied to the fields of polarized light detection and infrared polarization imaging and integrated photovoltaic devices.
ZrGeTe provided by the invention4The preparation method of the photovoltaic polarization detector has the advantages of few steps, simple method and lower cost, and the obtained bulk material ZrGeTe4The crystal quality is good, the crystallinity is high, no intermediate product is generated in the process, and the transport medium KCl can be recycled; bulk material ZrGeTe4The crystal has good structure, the crystal has a layered structure, and the thin layer can be easily peeled off by using the adhesive tape, which is beneficial to ZrGeTe4And (4) preparing a photovoltaic polarization detector.
Drawings
FIG. 1 schematically shows ZrGeTe of the present invention4Photovoltaic type polarization detector.
FIG. 2 schematically shows ZrGeTe of the present invention4The photovoltaic polarization detector carries out the experimental subassembly of surveying the experiment.
FIG. 3 shows ZrGeTe in an embodiment of the invention4The absorption rate of the photovoltaic polarization detector at the wavelength of 1064nm changes along with the change of the included angle gamma between the crystal armchair direction and the light polarization direction.
FIG. 4 shows ZrGeTe in an embodiment of the invention4Variation of P (theta) of photovoltaic polarization detector at 638nm along with polarization direction
FIG. 5 shows ZrGeTe in an embodiment of the invention4The angle-dependent photocurrent at 0 bias at 1064nm was fitted to the photovoltaic type polarization detector.
FIG. 6 shows ZrGeTe in an embodiment of the invention4An angle-dependent photocurrent fit curve for a photovoltaic type polarization detector at 0 bias at 1550 nm.
FIG. 7 shows ZrGeTe in an embodiment of the invention4A preparation flow chart of the photovoltaic polarization detector.
[ description of reference ]
10-a substrate; 11-two-dimensional ZrGeTe4A semiconductor; 12-a metal electrode;
13-a laser; 14-a Glan Taylor prism; 15-half wave plate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
Referring to FIG. 1, the present invention provides a ZrGeTe4Photovoltaic type polarization detector, comprising: a substrate 10; two-dimensional ZrGeTe4A semiconductor 11 formed on a substrate 10, wherein the two-dimensional ZrGeTe4The semiconductor 11 has in-plane anisotropy; a metal electrode 12; formed in two dimensions ZrGeTe4On the semiconductor 11.
The substrate 10 is made of crystalline Si and SiO2The composition is that the crystal Si is N-type crystal Si doped with P. The N-type crystal Si is a negative charge carrier type crystal Si, and the P-type crystal Si is a positive charge carrier type crystal Si. The substrate 10 of the detector proposed by the invention is SiO epitaxially grown from the above-mentioned crystalline Si2The structure is stable, the price is moderate, and the material is suitable for serving as a substrate material. In one embodiment of the invention, the surface is polished after the preparation is finished, and SiO is controlled2Layer thickness 300nm and SiO measured in microstructural tests2Has an apparent crystal orientation of<100>。
Two-dimensional ZrGeTe4 SiO semiconductor 11 on substrate 102On the layer. The theoretical band gap of the two-dimensional ZrGeTe4 semiconductor 12 is 0.89-1.39 eV, and the two-dimensional ZrGeTe semiconductor is suitable for ultraviolet light-visible light-near infrared photoelectric detection. Compared with a three-dimensional material, the two-dimensional material has smaller volume, can be made into smaller devices and is convenient to integrate, and the two-dimensional material is generally better in flexibility, thereby having important significance for saving resources, improving the integration level and realizing the flexibility and miniaturization of the devices.
In one embodiment of the present invention, two-dimensional ZrGeTe4The semiconductor 11 has a thickness of 31.2 nm. For two-dimensional ZrGeTe4The microstructure of the semiconductor 11 is divided into a microstructure and an in-plane optical anisotropyAnalyzing, wherein an X-ray diffraction (XRD) experiment of the crystal shows 8 characteristic peaks, and the characteristic peaks are consistent with a PDF card; the High Resolution Transmission Electron Microscope (HRTEM) characterization test of the crystal obtains two crystal planes (200) and (060), the interplanar spacing is respectively
And
the angle-resolved Raman spectrum of the crystal shows that the crystal has 10 Raman modes, wherein the frequency is 73cm-1Has a mode of A2Mold, the rest is A1Molding; referring to fig. 3 and 4, the characterization of the absorption spectrum and the reflection differential spectrum shows that the absorption spectrum and the reflection differential spectrum both have good in-plane optical anisotropy, wherein the normalized quantity P (θ) in the reflection differential spectrum is calculated according to the following formula:
in the formula, RaAnd RbWhen polarized light is vertically incident, the reflectivity along two arbitrary orthogonal directions in a sample plane is respectively, and theta is an included angle between an incident angle and the direction of the crystal armchair.
In one embodiment of the present invention, the metal electrode 12 is made of gold and has a thickness of 50 nm.
The work function of the metal electrode 12 is positioned in two dimensions ZrGeTe4Below the fermi level of the semiconductor 11. Metal electrode 12 and two-dimensional ZrGeTe4The semiconductor 11 forms an electrical connection, resulting in a special photovoltaic characteristic, based on which the function of detecting polarized light without applying a bias voltage is realized. The above function will be specifically described in connection with a polarization detection assay in the following examples.
Using ZrGeTe4The photovoltaic polarization detector performs polarization detection experiments, and the required experimental components are shown in fig. 2, and comprise: a laser 13, a Glan Taylor prism 14 and a half-wave plate 15. The laser 13 serves as a light source in the experiment. The emitted laser light is generated through a Glan Taylor prism 14Polarization, the polarization of light is achieved. Finally, the polarization direction is changed by using a half-wave plate 15 to ensure that ZrGeTe4The photovoltaic polarization detector can receive optical signals in different polarization directions.
The above-mentioned photoelectric test shows that referring to fig. 5 and 6, zrGeTe provided by the present invention4The photovoltaic polarization detector realizes the polarization test of laser with wavelength of 360-1550nm under the condition of no bias voltage.
Wherein, two-dimensional ZrGeTe4The semiconductor 11 has strong in-plane anisotropy, and the peaks of the angle-dependent absorption fit curves at 1064nm and 1550nm are at different positions, the absorption peaks at 1064nm are at 0 ° and 180 °, and the absorption fit curve peak at 1550nm is at 90 °; two-dimensional ZrGeTe4The semiconductor 11 in the characterization of the reflection difference spectrum has different angles at which the P (θ) value peaks in tests at different wavelengths, the P (θ) peak at 638nm is at 90 ° and 270 °, and the P (θ) peak at 900nm is at 0 ° and 180 °. The dichroic ratio at 1064nm was 2.04, the second at 1550nm, and 1.31. These features are beneficial for detection of different wavelengths.
ZrGeTe of the invention4The formula of the fitting curve of the angle-resolved photocurrent of the photovoltaic polarization detector under zero bias voltage is as follows:
Iph＝Ipxsin2(θ+λ)+Ipycos2(θ+λ)
wherein, Iph、IpxAnd IpyThe total photocurrent of the device and the photocurrent of the device in the direction of the armchairs and the direction of the sawteeth are respectively. Theta is the polarization direction of light, and lambda is the included angle between the polarization angle of light and the direction of the armchair.
ZrGeTe provided by the invention4The photovoltaic polarization detector does not need external source-drain voltage during working, has great significance for the development of near-infrared polarization detection and resource-saving photovoltaic photodetectors, solves the problem that most two-dimensional semiconductors have large dark current, improves the thermal reliability of devices, and plays an important role in improving the detection rate of photoelectric devices. And integration of nano-scale thickness devices into devicesThe flexibility is of great significance, and the size of the photoelectric device is reduced to solve the problem of integration flexibility of the device.
Besides being applied to polarized light detection, the ZrGeTe provided by the invention4The photovoltaic polarization detector can also be applied to the field of infrared polarization imaging and integrated photovoltaic devices.
Referring to FIG. 7, an embodiment of the invention provides ZrGeTe4The preparation method of the photovoltaic polarization detector comprises the following steps:
s1, preparing the bulk material ZrGeTe4Stripping of semiconductors to two-dimensional ZrGeTe4A semiconductor 11;
s2, transferring the two-dimensional ZrGeTe4 semiconductor 11 to the substrate 10; spin-coating PMMA on a two-dimensional ZrGeTe4 semiconductor 11;
s3, etching an electrode pattern on the PMMA by using electron beam exposure;
s4, performing gold evaporation in a thermal evaporation mode to manufacture the metal electrode 12, and obtaining a ZrGeTe4 photovoltaic polarization detector;
s5, soaking the ZrGeTe4 photovoltaic polarization detector in acetone for ultrasonic development.
Wherein, in S1, the bulk material ZrGeTe4Stripping of semiconductors to two-dimensional ZrGeTe4The semiconductor 11 may be selected as: the bulk material ZrGeTe4Two-dimensional ZrGeTe with less peeling of adhesive tape for semiconductor4A semiconductor 11. The transfer of the two-dimensional ZrGeTe4 semiconductor 11 onto the substrate 10 is optionally operable to: two-dimensional ZrGeTe on adhesive tape4The semiconductor 11 is transferred to the substrate 10 with PDMS.
In the step of S3, etching an electrode pattern on PMMA by electron beam exposure, and optionally, performing gold evaporation in a thermal evaporation manner to manufacture the metal electrode 12 to obtain a ZrGeTe4 photovoltaic polarization detector, the evaporation rate is
The thickness of the vapor deposition is
The PMMA mask was used and the gold electrode purity upon thermal evaporation was 99.999%. In thatAfter ultrasonic treatment in acetone, ethanol and deionized water are sequentially used for cleaning. Alternatively, gold electrodes can be brought out into contact with the PCB board using a gold wire ball bonding machine.
Bulk material ZrGeTe mentioned in S14The preparation method of the semiconductor comprises the following steps: preparing precursor materials of zirconium powder, germanium powder and tellurium powder according to a preset mass proportion, and packaging the precursor materials of zirconium powder, germanium powder and tellurium powder and KCl with a preset mass of a transport medium in a vacuum quartz tube; placing one end containing the precursor material in a high temperature region and the other end in a low temperature region; the temperature rise speed of the high-temperature area is a first preset temperature rise speed; the heating speed of the low-temperature zone is a second preset heating speed; the temperature rise time of the high-temperature area and the low-temperature area is first preset time, and the heat preservation time of the high-temperature area and the low-temperature area is second preset time; cooling to room temperature, taking out, and preparing the bulk material ZrGeTe4A semiconductor. Wherein the total mass of the precursor materials of zirconium powder, germanium powder, tellurium powder and KCl is not more than 1 g; the first preset heating speed is greater than the second preset heating speed.
In one embodiment of the present invention, the preparation process is: firstly, packaging precursor materials of zirconium powder, germanium powder and tellurium powder and KCl with a preset mass ratio of 1: 1.2: 4 in a vacuum quartz tube, wherein the total mass of the precursor materials of zirconium powder, germanium powder, tellurium powder and KCl is not more than 1 g; secondly, placing one end containing the precursor material in a high-temperature area, and placing the other end in a low-temperature area; the temperature rise speed of the high-temperature area is 300 ℃/h; the temperature rise speed of the low-temperature zone is 200 ℃/h; and heating the high-temperature area and the low-temperature area for 2 hours, and preserving heat for 3 days. The third step is that after the second step is finished, the material is naturally cooled to room temperature and taken out to prepare the bulk material ZrGeTe4A semiconductor.
The method has simple steps and low cost, and the prepared bulk material ZrGeTe4The crystal quality is good, the crystallinity is high, no intermediate product is generated in the process, and the transport medium KCl can be recycled; bulk material ZrGeTe4The crystal has good structure, clear and bright points can be seen in high-resolution transmission electron microscope test, and the surface crystal orientation is<001>Direction; the crystal has a layered structure, and the thin layer can be stripped by using an adhesive tape, which is beneficial to ZrGeTe4And (4) preparing a photovoltaic polarization detector.
The above embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, it should be understood that the above embodiments are only examples of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. ZrGeTe4Photovoltaic type polarization detector, characterized in that it comprises:
a substrate (10);
two-dimensional ZrGeTe4A semiconductor (11) formed on the substrate (10), wherein the two-dimensional ZrGeTe4The semiconductor (11) has in-plane anisotropy;
a metal electrode (12) formed on the two-dimensional ZrGeTe4On the semiconductor (11).
2. ZrGeTe according to claim 14-a polarization detector of the photovoltaic type, characterized in that said substrate (10) comprises:
p-doped N-type crystal Si;
SiO2a layer formed on the P-doped N-type crystalline Si.
3. ZrGeTe according to claim 14The photovoltaic polarization detector is characterized in that the two-dimensional ZrGeTe4The band gap of the semiconductor (12) is 0.89-1.39 eV.
4. ZrGeTe according to claim 14Photovoltaic polarization detector, characterized in that the work function of the metal electrode (12) is located in two dimensions ZrGeTe4Below the fermi level of the semiconductor (12).
5. ZrGeTe according to claim 14The photovoltaic polarization detector is characterized in that the ZrGeTe4Under the condition of 0 bias voltage, the detection waveband of the photovoltaic polarization detector is 360-1550 nm.
6. ZrGeTe according to any one of claims 1 to 54The preparation method of the photovoltaic polarization detector is characterized by comprising the following steps:
the bulk material ZrGeTe4Stripping the semiconductor to said two-dimensional ZrGeTe4A semiconductor (11);
subjecting the two-dimensional ZrGeTe4Transferring the semiconductor (11) onto the substrate (10);
in the two-dimensional ZrGeTe4PMMA is spin-coated on the semiconductor (11);
etching an electrode pattern on the PMMA;
manufacturing a metal electrode (12) to obtain the ZrGeTe4Photovoltaic type polarization detector.
7. ZrGeTe according to claim 64The preparation method of the photovoltaic polarization detector is characterized in that the bulk material ZrGeTe4The preparation method of the semiconductor comprises the following steps:
preparing precursor materials of zirconium powder, germanium powder and tellurium powder according to a preset mass proportion, and packaging the precursor materials of zirconium powder, germanium powder and tellurium powder and KCl with a preset mass of a transport medium in a vacuum quartz tube;
placing one end containing the precursor material in a high-temperature area, and placing the other end in a low-temperature area; the temperature rise speed of the high-temperature area is a first preset temperature rise speed; the heating speed of the low-temperature area is a second preset heating speed;
the temperature rise time of the high-temperature area and the low-temperature area is first preset time, and the heat preservation time of the high-temperature area and the low-temperature area is second preset time;
cooling to room temperature, taking out, and preparing the bulk material ZrGeTe4A semiconductor.
8. ZrGeTe according to claim 74The preparation method of the photovoltaic polarization detector is characterized in that the total mass of the precursor materials of zirconium powder, germanium powder, tellurium powder and KCl is not more than 1 g.
9. Zr according to claim 7GeTe4The preparation method of the photovoltaic polarization detector is characterized in that the first preset heating speed is greater than the second preset heating speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110524757.0A CN113257941A (en) | 2021-05-13 | 2021-05-13 | Two-dimensional semiconductor photovoltaic polarization detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110524757.0A CN113257941A (en) | 2021-05-13 | 2021-05-13 | Two-dimensional semiconductor photovoltaic polarization detector and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113257941A true CN113257941A (en) | 2021-08-13 |
Family
ID=77183403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110524757.0A Pending CN113257941A (en) | 2021-05-13 | 2021-05-13 | Two-dimensional semiconductor photovoltaic polarization detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113257941A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140027775A1 (en) * | 2012-07-24 | 2014-01-30 | Micron Technology, Inc. | Methods of forming a metal chalcogenide material, related methods of forming a semiconductor device structure, and a related semiconductor device structure |
| CN109216497A (en) * | 2018-09-05 | 2019-01-15 | 中国科学院半导体研究所 | On piece optical detector and its manufacturing method based on Two-Dimensional Anisotropic material |
-
2021
- 2021-05-13 CN CN202110524757.0A patent/CN113257941A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140027775A1 (en) * | 2012-07-24 | 2014-01-30 | Micron Technology, Inc. | Methods of forming a metal chalcogenide material, related methods of forming a semiconductor device structure, and a related semiconductor device structure |
| CN109216497A (en) * | 2018-09-05 | 2019-01-15 | 中国科学院半导体研究所 | On piece optical detector and its manufacturing method based on Two-Dimensional Anisotropic material |
Non-Patent Citations (4)
| Title |
|---|
| 李傲雷: "铌基硫属化合物的制备、晶体结构和电磁学性质", 《万方数据-学位论文库》 * |
| 李傲雷: "铌基硫属化合物的制备、晶体结构和电磁学性质", 《万方数据-学位论文库》, 2 November 2015 (2015-11-02), pages 11 - 12 * |
| 郭鹏生: "二维材料ZrGeTe4电子结构和载流子迁移率的第一性原理研究", 《CNKI中国硕士论文电子期刊库》 * |
| 郭鹏生: "二维材料ZrGeTe4电子结构和载流子迁移率的第一性原理研究", 《CNKI中国硕士论文电子期刊库》, 15 January 2021 (2021-01-15), pages 5 - 7 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10636654B2 (en) | Wafer-scale synthesis of large-area black phosphorus material heterostructures | |
| Evans et al. | Optical and electrical properties of SnSe2 | |
| US20200083037A1 (en) | Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same | |
| CN113013279B (en) | Tellurium-cadmium-mercury-black phosphorus van der Waals heterojunction infrared polarization detector and preparation method thereof | |
| Han et al. | Oriented perovskite growth regulation enables sensitive broadband detection and imaging of polarized photons covering 300–1050 nm | |
| CN109648095B (en) | Antimony nanosheet and stripping method thereof, and flexible photodetector and preparation method thereof | |
| CN110808309A (en) | Ferroelectric enhanced Van der Waals heterojunction polarization detector and preparation method thereof | |
| CN109244246B (en) | Broadband photoelectric detector based on topological insulator bismuth selenide electrode | |
| Nour et al. | Piezoelectric and opto-electrical properties of silver-doped ZnO nanorods synthesized by low temperature aqueous chemical method | |
| Yang et al. | A Centimeter‐Scale Type‐II Weyl Semimetal for Flexible and Fast Ultra‐Broadband Photodetection from Ultraviolet to Sub‐Millimeter Wave Regime | |
| CN113257941A (en) | Two-dimensional semiconductor photovoltaic polarization detector and preparation method thereof | |
| Wang et al. | Polarization‐and Gate‐Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure | |
| Gullu et al. | Influence of temperature on optical properties of electron-beam-evaporated ZnSe thin film | |
| US11101394B2 (en) | Method of transferring tin sulfide film and photoelectric device using the method | |
| CN111722310A (en) | Device and method for modulating fluorescence polarization of two-dimensional crystal forbidden band | |
| CN113707752B (en) | Two-dimensional material CrPS4Method for constructing visible-near infrared photoelectric detector of heterojunction | |
| Bork et al. | Impacts of growth conditions on InAlBiAs electrical properties and morphology | |
| CN115663042A (en) | Self-powered polarization sensitive photoelectric detector and preparation method thereof | |
| CN113130681B (en) | Narrow-band-gap two-dimensional magnetic thin film heterojunction uncooled infrared detector | |
| Ahmed et al. | Aluminum Incorporation Impacts on Some Physical Properties of Pure CdO Film Synthesized by Spray Pyrolysis | |
| CN111722309B (en) | Preparation method of two-dimensional crystal forbidden band fluorescence polarization modulation device | |
| CN218896644U (en) | Thallium nickel selenium photoelectric detector | |
| Dutta et al. | Optical and microstructural characterization of multilayer Pb (Zr 0.52 Ti 0.48) O 3 thin films correlating ellipsometry and nanoscopy | |
| CN115132879A (en) | Preparation method of single crystal nano linearly polarized light detector | |
| CN111211195B (en) | Method for preparing high-performance photoelectric detector by using novel chemical modification means |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |