CN113253333A - Method for operating a particle beam device, computer program product and particle beam device - Google Patents
Method for operating a particle beam device, computer program product and particle beam device Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 190
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- 238000010894 electron beam technology Methods 0.000 claims abstract description 65
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T5/00—Recording of movements or tracks of particles; Processing or analysis of such tracks
- G01T5/002—Recording of movements or tracks of particles; Processing or analysis of such tracks using a combination of several movement of track recording devices
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- H—ELECTRICITY
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- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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- H01J2237/1536—Image distortions due to scanning
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Abstract
The present invention relates to a method for operating a particle beam device for imaging and/or analyzing an object, a computer program product and a particle beam device for carrying out the method. The particle beam device is embodied, for example, as an electron beam device and/or an ion beam device. The method comprises the following steps: generating a particle beam; focusing the particle beam onto a scanning area of the object, wherein the scanning area is embodied as a first region; scanning the particle beam over a scanning field on the object, wherein, with maximum deflection of the scanning device, the scanning field is embodied as a second region, wherein the first region of the scanning region and the second region of the scanning field have a first overlapping region, and wherein the second region of the scanning field has a second region which does not overlap with the first region of the scanning region; and generating an image and/or performing an analysis using detection signals generated only as a result of the first interacting particles and/or interacting radiation originating from the first overlap region.
Description
Technical Field
The present invention relates to a method for operating a particle beam device for imaging and/or analyzing an object, a computer program product and a particle beam device for carrying out the method. The particle beam device is embodied, for example, as an electron beam device and/or an ion beam device.
Background
Electron beam devices, in particular scanning electron microscopes (hereinafter also referred to as SEMs) and/or transmission electron microscopes (hereinafter also referred to as TEMs), are used for examining objects (samples) to gain insight about the properties and behavior under certain conditions.
In an SEM, an electron beam (hereinafter also referred to as a primary electron beam) is generated by a beam generator and focused by a beam guidance system onto an object to be inspected. The primary electron beam is directed in a scanning manner over the surface of the object to be examined by means of a deflection device in the form of a scanning device. Here, the electrons of the primary electron beam interact with the object to be examined. As a result of the interaction, in particular, electrons are emitted by the object (so-called secondary electrons) and the electrons of the primary electron beam are backscattered (so-called backscattered electrons). Secondary and backscattered electrons are detected and used for image generation. An image representation of the object to be examined is thus obtained.
In the case of a TEM, the primary electron beam is also generated by a beam generator and focused by a beam guidance system onto the object to be examined. The primary electron beam passes through the object to be inspected. When the primary electron beam passes through the object to be inspected, electrons of the primary electron beam interact with the material of the object to be inspected. Electrons passing through the object to be examined are imaged onto a phosphor screen or a detector (e.g. a camera) by a system consisting of an objective lens and a projection unit. The imaging can also take place in a scanning mode of a TEM. Generally, such a TEM is called STEM. Furthermore, backscattered electrons at the object to be examined and/or secondary electrons emitted by the object to be examined may be detected by a further detector in order to image the object to be examined.
Furthermore, it is known from the prior art to use a combined device for inspecting an object, wherein both electrons and ions can be directed onto the object to be inspected. For example, it is known to additionally equip the SEM with an ion beam column. An ion beam generator disposed in an ion beam column generates ions for preparing an object (e.g., removing material from or applying material to an object) or for imaging. For this purpose, the ions are scanned over the object by a deflection device in the form of a scanning device. SEM is used here in particular for observing the preparation, but also for further examination of the prepared or unprepared object.
It is known that due to the technical configuration of the objective lens and due to the technical configuration of the scanning device, in particular for the following reasons, the region of the object to be imaged and to be scanned with the particle beam is limited.
First, it is known that, in the case of the above-described particle beam device, a circular lens is used as an objective lens, which focuses the particle beam onto the object in such a way that a circular area of the object is imaged. The circular area is substantially a circular scanning area. If regions of the object that lie outside the aforementioned circular scanning area are imaged, undesirably large image aberrations can occur during the imaging of these regions of the object.
Secondly, the above-mentioned scanning device typically comprises a first deflection device for deflection in the x-direction and a second deflection device for deflection in the y-direction. The first deflection device is driven by the first deflection amplifier unit with a first voltage or a first current. The second deflection device is driven by the second deflection amplifier unit with a second voltage or a second current. The region of the object onto which the scanning device can direct the particle beam is referred to above and also below as the scanning field. The first deflection device and the second deflection device, due to their electronic design, can provide a voltage or a current with an amplitude within a maximum amplitude. Said maximum amplitude enables the first and second deflection devices to deflect the particle beam maximally. Therefore, when a voltage or a current having the maximum amplitude is fed, the maximum scanning field is obtained. Typically, the maximum scan field has a square or rectangular shape. However, maximum scan fields are also known, which provide a substantially circular maximum scan field by means of a deflection device comprising an electrostatic multipole unit. However, a square or rectangular shape of the maximum scan field is typically chosen to more easily represent the image of the object on a monitor or paper.
As mentioned above in relation to the objective lens, during imaging of an area of the object arranged outside the circular maximum scan area, undesirably large image aberrations occur. In order to avoid these image aberrations, it is known to select the maximum scan field of the scanning device in such a way that it is completely accommodated in the maximum circular scan area. This is illustrated in fig. 1. The maximum scan field 602 controlled by the scanning device is completely contained in the maximum circular scan area 601 controlled by the objective lens. In generating an image and/or analyzing an object, known prior art techniques use only detection signals generated as a result of detecting interacting particles and/or interacting radiation generated by the particle beam interaction with a region of the object located at the maximum scan field 602. Even if the image and/or analysis of the area of the object located in the shaded area of the maximum circular scan area 601 in fig. 1 exhibits little aberration, the shaded area of the maximum circular scan area 601 is not used to generate an image of the object and/or analyze the object. Thus, information about the object is lost.
In order to avoid the above-mentioned problems, the deflection amplifier unit of the scanning device may be dimensioned in such a way that it is possible to obtain a larger maximum scanning field 602A (shown with a dashed line in fig. 1) which completely covers the maximum circular scanning area 601. The area of the object in the maximum circular scan area 601 will then be fully imaged and/or analyzed without relatively large aberrations. However, the region of the object outside the maximum circular scan region 601 is represented or analyzed in a manner that exhibits aberrations. If the size and position of the largest circular scanning area 601 is unknown, it is not known which areas of the represented image or of the represented object under analysis exhibit or do not exhibit aberrations. This is undesirable.
With respect to the prior art, reference is made by way of example to US 8,304,750 a 1.
Disclosure of Invention
The present invention is therefore based on the object of specifying a method for operating a particle beam device for imaging and/or analyzing an object, a computer program product and a particle beam device for carrying out the method, with which a region of the object located in the maximum scanning region can be imaged or can be reliably analyzed.
According to the invention, this object is achieved by a method having the features described below. A computer program product comprising program code for controlling a particle beam device for performing the method is presented below. Furthermore, a particle beam device for generating an image and/or for analyzing an object is given below. Further features of the present invention will become apparent from the following description, the appended claims and/or the accompanying drawings.
The method according to the invention is designed for operating a particle beam device for imaging (that is to say for generating images) and/or analyzing an object. The particle beam device according to the invention is embodied, for example, as an electron beam device and/or as an ion beam device. The particle beam device according to the invention is used in particular for imaging, processing and/or analyzing an object.
In the method according to the invention, generating a particle beam comprising charged particles by at least one beam generator is provided. For this purpose, the particle beam device comprises at least one beam generator for generating a particle beam comprising charged particles. The aforementioned particles are hereinafter also referred to as primary particles. For example, the primary particles are electrons or ions.
Furthermore, in the method according to the invention, it is provided that the particle beam is focused by means of at least one objective lens onto a scanning area on the object. For this purpose, the particle beam device comprises at least one objective lens for focusing the particle beam on the object. Due to the optical embodiment of the objective lens, the scanning area is implemented as the first zone. The first region may have any shape. For example, if the objective lens is implemented as a circular lens, the above-mentioned scanning area is also implemented as a circle. It should be explicitly noted, however, that the present invention is not limited to the circular shape of the first region. Rather, any shape of the first zone suitable for the present invention may be used in the method according to the present invention. The maximum size and shape of the first region of the scanning region depend, for example, on the adjusted magnification of the particle beam device. This will be discussed in more detail further below.
Furthermore, in the method according to the invention, it is provided that the particle beam is scanned over a scanning field of the object by means of at least one scanning device. The region of the object onto which the scanning device can direct the particle beam is referred to above and also below as the scanning field. For example, the scanning device comprises a first deflection device for deflecting the particle beam in the x-direction and a second deflection device for deflecting the particle beam in the y-direction. The first deflection device is driven with a first voltage, for example by a first deflection amplifier unit. The second deflection device is driven with a second voltage, for example by a second deflection amplifier unit. The first deflection device and the second deflection device, due to their electronic design, can provide a voltage, for example, up to the maximum amplitude of the voltage. The voltage with the largest amplitude enables the first deflection device and the second deflection device to deflect the particle beam maximally. Therefore, when a voltage having the maximum amplitude is fed, the maximum scanning field is obtained. For example, the maximum scan field has a square or rectangular shape. In a further embodiment, the first deflection device is driven with a first current, for example by a first deflection amplifier unit. The second deflection device is driven with a second current, for example by a second deflection amplifier unit. The first deflection device and the second deflection device, due to their electronic design, can provide a current, for example, up to the maximum amplitude of the current. The current with the largest amplitude enables the first deflection device and the second deflection device to deflect the particle beam maximally. Therefore, when a current having the maximum amplitude is fed, the maximum scanning field is obtained. For example, the maximum scan field has a square or rectangular shape.
In the method according to the invention, provision is made for the scanning field to be embodied as a second region with maximum deflection of the particle beam by the scanning device. The first region of the scan area and the second region of the scan field have a first overlap region. In other words, the first region of the scan area and the second region of the scan field have a common region, i.e., a first overlap region. In other words, the first overlap region is a region common to the first region of the scan field and the second region of the scan field. Said region of the second region of the scan field which does not overlap the first region of the scan region is hereinafter also referred to as a second non-overlapping region of the second region of the scan field.
The method according to the invention also relates to detecting interacting particles and/or interacting radiation by means of at least one detector. When the particle beam is fed to the object, interaction of the particle beam with the object takes place. Interacting particles and/or interacting radiation are generated in the process. The interacting particles are for example secondary particles, in particular secondary electrons, and/or backscattered particles, for example backscattered electrons. The interaction radiation is, for example, x-ray radiation or cathodoluminescent light.
Furthermore, the method according to the invention relates to generating a detection signal by means of a detector, wherein the detection signal is generated as a result of the detected interacting particles and/or interacting radiation.
In the method according to the invention, it is further provided to generate an image of the object and/or to analyze the object, wherein for this purpose those detection signals are used which are generated only as a result of the detected interacting particles and/or interacting radiation originating from the first overlapping region. Thus, for generating an image and/or analyzing the object, only detection signals generated due to the interaction of the particle beam with a region of the object comprising a first overlap region of a first region of the scanning area and a second region of the scanning field are used. Those detection signals generated due to detected interacting particles and/or interacting radiation originating from second non-overlapping regions of the second region of the scan field are not used, masked out of the image of the object and/or masked out of the displayed analysis of the object when generating the image of the object and/or when analyzing the object.
Furthermore, in the method according to the invention, it is provided to display the image of the object and/or the results of the analysis on a display device (for example, a display device of a particle beam apparatus).
The further method according to the invention is likewise designed for operating a particle beam device for imaging (that is to say for generating images) and/or analyzing an object. The particle beam device according to the invention is embodied, for example, as an electron beam device and/or as an ion beam device. The particle beam device according to the invention is used in particular for imaging, processing and/or analyzing an object.
In a further method according to the invention, generating a particle beam comprising charged particles by at least one beam generator is also provided. For this purpose, the particle beam device comprises at least one beam generator for generating a particle beam comprising charged particles. The aforementioned particles are hereinafter also referred to as primary particles. For example, the primary particles are electrons or ions.
Furthermore, in a further method according to the invention, it is provided that a scanning region on the object is determined, wherein the scanning region is embodied as a first region due to an optical embodiment of the objective lens, and wherein the scanning region can be imaged and/or analyzed with the particle beam. The first region may have any shape. For example, if the objective lens is implemented as a circular lens, the above-mentioned scanning area is also implemented as a circle. It should be explicitly noted, however, that the present invention is not limited to the circular shape of the first region. Rather, any shape of the first zone suitable for the present invention may be used in the method according to the present invention. The maximum size and shape of the first region of the scanning region depend, for example, on the adjusted magnification of the particle beam device. This will be discussed in more detail further below.
Furthermore, in a further method according to the invention, a scan field of the object generated by the scanning device is determined, wherein the scan field is implemented as the second region in the case of a maximum deflection of the scanning device. The scanning device is for example implemented as already explained further above. For example, the maximum scan field has a square or rectangular shape.
In a further method according to the invention, provision is made for the scanning field to be embodied as a second region in the case of a maximum deflection of the particle beam by the scanning device. The first region of the scan area and the second region of the scan field have a first overlap region. In other words, the first region of the scan area and the second region of the scan field have a common region, i.e., a first overlap region. In other words, the first overlap region is a region common to the first region of the scan field and the second region of the scan field. Said region of the second region of the scan field which does not overlap the first region of the scan region is hereinafter also referred to as a second non-overlapping region of the second region of the scan field.
Furthermore, a further method according to the invention comprises focusing the particle beam only onto the first overlap region. Only the particle beam is scanned over the first overlap region.
A further method according to the invention also relates to detecting interacting particles and/or interacting radiation by means of at least one detector. When the particle beam is fed to the first overlap region, the particle beam interacts with the portion of the object arranged at the first overlap region. Interacting particles and/or interacting radiation are generated in the process. The interacting particles are for example secondary particles, in particular secondary electrons, and/or backscattered particles, for example backscattered electrons. The interaction radiation is, for example, x-ray radiation or cathodoluminescent light.
Furthermore, a further method according to the invention relates to generating a detection signal by a detector, wherein the detection signal is generated as a result of the detected interacting particles and/or interacting radiation. In a further method according to the invention, it is also provided to generate an image of the object and/or to analyze the object, wherein for this purpose those detection signals are used which are generated as a result of the detected interacting particles and/or interacting radiation originating from the first overlapping region.
Furthermore, in a further method according to the invention, it is provided to display an image of the object on a display device (e.g. a display device of a particle beam apparatus).
Even further methods according to the invention are likewise designed for operating a particle beam device for imaging (that is to say for generating images) and/or analyzing an object. The particle beam device according to the invention is embodied, for example, as an electron beam device and/or as an ion beam device. The particle beam device according to the invention is used in particular for imaging, processing and/or analyzing an object.
In an even further method according to the present invention, generating a particle beam comprising charged particles by at least one beam generator is provided. For this purpose, the particle beam device comprises at least one beam generator for generating a particle beam comprising charged particles. The aforementioned particles are hereinafter also referred to as primary particles. For example, the primary particles are electrons or ions.
Furthermore, in an even further method according to the invention, it is provided that the particle beam is focused onto a scanning area on the object by means of at least one objective lens. For this purpose, the particle beam device comprises at least one objective lens for focusing the particle beam on the object. Due to the optical embodiment of the objective lens, the scanning area is implemented as the first zone. The first region may have any shape. For example, if the objective lens is implemented as a circular lens, the above-mentioned scanning area is also implemented as a circle. It should be explicitly noted, however, that the present invention is not limited to the circular shape of the first region. Rather, any shape of the first zone suitable for the present invention may be used in the method according to the present invention. The maximum size and shape of the first region of the scanning region depend, for example, on the adjusted magnification of the particle beam device. This will be discussed in more detail further below.
Furthermore, in an even further method according to the invention, it is provided that the particle beam is scanned over a scanning field of the object by means of at least one scanning device. For example, the scanning device comprises a first deflection device for deflecting the particle beam in the x-direction and a second deflection device for deflecting the particle beam in the y-direction. With respect to embodiments of the scanning device, reference is made to the further observations above, which also apply here.
In an even further method according to the invention, it is provided that the scanning field is implemented as a second region in the case of a maximum deflection of the particle beam by the scanning device. The first region of the scan area and the second region of the scan field have a first overlap region. In other words, the first region of the scan area and the second region of the scan field have a common region, i.e., a first overlap region. In other words, the first overlap region is a region common to the first region of the scan field and the second region of the scan field. Said region of the second region of the scan field which does not overlap the first region of the scan region is hereinafter also referred to as a second non-overlapping region of the second region of the scan field.
Even further methods according to the invention also relate to the detection of interacting particles and/or interacting radiation by at least one detector. When the particle beam is fed to the object, interaction of the particle beam with the object takes place. Interacting particles and/or interacting radiation are generated in the process. The interacting particles are for example secondary particles, in particular secondary electrons, and/or backscattered particles, for example backscattered electrons. The interaction radiation is, for example, x-ray radiation or cathodoluminescent light.
Furthermore, an even further method according to the invention relates to generating a detection signal by a detector, wherein the detection signal is generated due to detected interacting particles and/or interacting radiation.
An even further method according to the invention relates to generating a first image of the object using detection signals generated due to detected interacting particles and/or interacting radiation originating from the first overlapping area. Furthermore, an even further method according to the invention relates to generating a second image of the object using detection signals generated due to detected interacting particles and/or interacting radiation originating from a second non-overlapping region of a second region of the scan field.
Furthermore, in an even further method according to the invention, the first image of the object is identified with the first identifier and/or the second image of the object is identified with the second identifier. Furthermore, a first image of the object identified with the first identifier and/or a second image identified with the second identifier is displayed on a display device (e.g. a display device of a particle beam apparatus).
In particular, it is provided to use at least one first separation line (e.g. a circular line) extending along the outer boundary of the overlap region as a first identifier. Additionally or alternatively, there is provided the use of at least one first color as the first identifier. In a further embodiment, additionally or alternatively, it is provided to use at least one second separation line (e.g. a circular line) extending along the outer boundary of the non-overlapping area as a second identifier. Additionally or alternatively, an adjustable contrast using at least one second color or a second image is provided as the second identifier.
Advantages and embodiments of the method according to the invention, the further method according to the invention and even the further method according to the invention are discussed below. When all methods are referred to in the following, these methods are referred to in the following as the method according to the invention.
An advantage of the method according to the invention is that only those regions of the object that can be imaged and/or analyzed with very significant aberrations are not taken into account or identified in such a way that these regions can be easily recognized by the user when generating the image and/or when performing the analysis of the object. By means of the method according to the invention, imaging and/or analysis or consideration is carried out after imaging of those regions of the object which exhibit only small aberrations.
In an embodiment of the method according to the invention, it is additionally or alternatively provided that the first region of the scanning area and the second region of the scanning field are oriented in such a way that the first region of the scanning area is completely arranged in the second region of the scanning field. In other words, the second region of the scan field completely covers the first region of the scan area. In other words, the first region of the scan area is located entirely within the second region of the scan field.
In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the first region of the scanning area is selected in such a way that it has a first shape. Furthermore, additionally or alternatively, it is provided to select the second region of the scan field in such a way that the second region has a second shape, wherein the first shape is different from the second shape. For example, it is provided to select the first region of the scanning area in such a way that the first region is embodied as a circle. In addition or as an alternative thereto, it is provided to select the second region of the scanning field in such a way that the second region is implemented as a polygon. For example, the second region of the scan field is implemented as a square or rectangle. However, it should be explicitly noted that the present invention is not limited to a circular shape of the first region and/or a polygonal shape of the second region. Rather, any shape of the first region and/or the second region suitable for the present invention may be used in the method according to the present invention.
In a still further embodiment of the method according to the invention, additionally or alternatively, it is provided that the mask is arranged over a second non-overlapping region of the second region of the scan field. The mask has the following effects: detection signals generated with detected interacting particles and/or interacting radiation originating from second non-overlapping regions of the second region of the scan field are used when generating an image of the object and/or when analyzing the object. For example, if the dimensions that this physical mask is intended to have are producible, then the mask may be a physical mask. In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the mask is implemented as an electronic mask. For example, an electronic mask is generated by image processing and/or data processing. For example, it is provided that, by means of image processing and/or data processing, detection signals generated as a result of detected interacting particles and/or interacting radiation originating from second non-overlapping regions of the second region of the scan field are masked out when generating an image of the object and/or when analyzing the object and are therefore not displayed simultaneously in the image of the object and/or when displaying the analysis result of the object. Electronic masks are particularly advantageous if the physical mask cannot be easily created because of the undersize. In an embodiment of the method according to the invention, additionally or alternatively, a second non-overlapping area of the second region of the scan field is provided which is covered and masked by the mask. For example, a second non-overlapping region is provided that completely covers and masks a second region of the scan field.
In an embodiment of the method according to the invention, it is additionally or alternatively provided that the first region of the scanning area and the second region of the scanning field are selected in such a way that the first region and the second region have a boundary region. At the boundary region, the first region of the scan area adjoins a second non-overlapping region of the second region of the scan field. In order to specify which detection signals are used for generating an image of the object and/or for analyzing the object, at least one straight line is used in this embodiment of the method according to the invention. The straight line is, for example, a virtual straight line which is used in image processing and/or data processing to identify regions of the object which are or are not intended to be considered when generating an image of the object and/or when analyzing the object. In particular, it is provided to orient a straight line along the boundary region, wherein a first side of the straight line is directed towards a first region of the scan area, and wherein a second side of the straight line is directed towards a second non-overlapping region of a second region of the scan field. In an embodiment of the method according to the invention described herein, it is provided that the detection signals originating from the regions of the object on the second side of the straight line are not used when generating the image of the object and/or when analyzing the object. In other words, when generating an image of an object and/or when analyzing an object,
detection signals generated with detected interacting particles and/or interacting radiation originating from second non-overlapping regions of a second region of the scan field, the second region being arranged on a second side of the straight line, are not used. The portion of the second region of the scan field that does not overlap the first region of the scan area is arranged in the region of the object arranged on the second side of the line. In contrast, detection signals generated with detected interacting particles and/or interacting radiation originating from regions arranged on a first side of the straight line are used when generating an image of the object and/or when analyzing the object. The region includes at least a first region of the scan region.
In a still further embodiment of the method according to the invention, additionally or alternatively, it is provided that the above-mentioned method steps are performed during and/or after adjusting the magnification of the particle beam device. In other words, the method steps mentioned above and/or further mentioned below are performed, for example, when adjusting the magnification of the particle beam device or after the magnification of the particle beam device has been adjusted. For example, the magnification of the particle beam device changes from a small magnification (1: 1000) to a large magnification (e.g., 1: 500.000). This is achieved by reducing the amplitude of the voltage and/or current in the scanning device. In an embodiment of the method according to the invention, additionally or alternatively, a continuous adjustment of the magnification is provided, wherein the method steps mentioned above and/or further mentioned below are also performed continuously. In yet a further embodiment of the method according to the invention, additionally or alternatively, it is provided that the magnification is adjusted in discrete steps, wherein the method steps mentioned above or further mentioned below are also performed in discrete steps. For example, if the above-mentioned mask is used, the size of the mask is also changed according to the adjusted magnification during the adjustment of the magnification.
In an embodiment of the method according to the invention, additionally or alternatively, it is provided that the execution of the method is indicated to a user of the particle beam apparatus by means of at least one signaling device. The signalling device is, for example, an indicator light and/or a display on a display device of the particle beam apparatus. Thus, for example, the user is notified: the detection signals generated due to detected interacting particles or interacting radiation originating from a first overlapping region are used when generating the image of the object and/or when analyzing the object, whereas the detection signals generated due to detected interacting particles and/or interacting radiation originating from a second non-overlapping region of the second region of the scan field are not used when generating the image of the object and/or when analyzing the object.
In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the image is a first image and the analysis is a first analysis. In this further embodiment of the method according to the invention, it is now provided to generate a second image of the object and/or to perform a second analysis of the object using the detection signal. In this case, those detection signals that are generated as a result of the interaction of the particle beam with the object from the complete scan field are used. Thus, in this embodiment, a detection signal generated with detected interacting particles and/or interacting radiation originating from the first overlapping area is used. Further, in this embodiment, detection signals generated with detected interacting particles and/or interacting radiation originating from second non-overlapping regions of the second region of the scan field are used. Further, the first image and/or the second image is stored in the storage unit. Additionally or alternatively, storing the first analysis and/or the second analysis in a storage unit is provided. The first image and the first analysis are thus based on an interaction from the first overlapping region. In contrast, the second image and the second analysis are based on interactions from a complete scan field.
In an even further embodiment of the method according to the invention, additionally or alternatively, shifting the scanning field over the object by means of the scanning device is provided. If for example the above mentioned mask is used in this even further embodiment of the method according to the invention, this mask is shifted together with the scan field such that the following are always the case: only detection signals originating from regions of the object exhibiting few aberrations are used for generating an image of the object and/or for analyzing the object. Such a shift of the scanning field can be realized, for example, by a voltage offset at the output stage of a deflection amplifier unit of the scanning device, for example by adding a DC voltage signal for the shift and an AC voltage signal for the scanning. The second region of the scan field may have a size of, for example, 600 μm by 600 μm. For example, as described above, the shift of the scan field is ± 15 μm by the voltage offset. With regard to the method according to the invention, in this case the mask can be selected in such a way that it simultaneously covers a region of the second region of the scan field which can be reached by the particle beam by a displacement of the scan field and which is therefore not represented in the generated image of the object and/or not taken into account in the analysis of the object. As an alternative thereto, the region of the scanning region, which is reachable by a displacement of the scanning field, can be used when generating an image of the object and/or when analyzing the object.
The invention also relates to a computer program product comprising program code loadable or loaded into a processor of a particle beam device, wherein the program code, when executed in the processor, controls the particle beam device in such a way that a method with at least one of the features described above or below or with a combination of at least two of the features described above or below is performed.
The invention also relates to a particle beam device for imaging and/or analyzing an object. The particle beam device according to the invention comprises at least one beam generator for generating a particle beam comprising charged particles. The charged particles are, for example, electrons or ions. The particle beam device according to the invention comprises at least one objective lens for focusing the particle beam on the object. Furthermore, the particle beam apparatus according to the invention comprises at least one scanning device for scanning the particle beam over the object. Further, the particle beam device according to the invention comprises at least one detector for detecting interacting particles and/or interacting radiation that emerges from the interaction between the particle beam and the object when the particle beam is incident on the object. Furthermore, the particle beam device according to the invention is provided with at least one display device for displaying the image and/or the analysis result of the object. Furthermore, the particle beam device according to the invention comprises a control unit comprising a processor in which a computer program product with at least one of the features described above or below or a combination of at least two of the features described above or below is loaded.
In an embodiment of the particle beam device according to the invention, the beam generator is implemented as a first beam generator and the particle beam is implemented as a first particle beam comprising first charged particles. Further, the objective lens is implemented as a first objective lens for focusing the first particle beam onto the object. Furthermore, the particle beam device according to the invention comprises at least one second beam generator for generating a second particle beam comprising second charged particles. Further, the particle beam device according to the invention comprises at least one second objective lens for focusing the second particle beam onto the object.
In particular, it is provided to implement the particle beam device as an electron beam device and/or an ion beam device.
Drawings
Further practical embodiments and advantages of the invention are described below in conjunction with the accompanying drawings. In the drawings:
fig. 1 shows a schematic representation of a scan area and a scan field according to the prior art;
FIG. 2 shows a schematic illustration of a particle beam device;
FIG. 3 shows a schematic illustration of a further particle beam apparatus;
FIG. 4 shows a schematic illustration of an even further particle beam apparatus;
FIG. 5 shows a schematic illustration of a scanning apparatus of the particle beam device;
FIG. 6 shows a flow chart of one embodiment of a method according to the invention;
FIG. 7 shows a schematic representation of a scan area and a scan field according to the present invention;
FIG. 8 shows a schematic representation of a scan region and a scan field in which the imaging region is defined by straight lines, in accordance with the present invention;
FIG. 9 shows a flow chart of a further embodiment of a method according to the invention;
fig. 10 shows a flow chart of an even further embodiment of the method according to the invention;
FIG. 11 shows a further schematic illustration of a scan region and a scan field;
fig. 12 shows an even further schematic illustration of a scan region and a scan field;
FIG. 13 shows yet another schematic illustration of a scan area and a scan field;
FIG. 14 shows a further schematic illustration of a scan area and a scan field;
FIG. 15 shows a flow chart of yet a further embodiment of a method according to the invention; and
fig. 16 shows a flow chart of a further embodiment of the method according to the invention.
Detailed Description
The invention will now be explained in more detail by means of a particle beam device in the form of an SEM and a combined device having an electron beam column and an ion beam column. The following facts are explicitly mentioned: the invention may be used in any particle beam device, in particular any electron beam device and/or any ion beam device.
Fig. 2 shows a schematic illustration of SEM 100. The SEM100 comprises a first beam generator in the form of an electron source 101, which is implemented as a cathode. Further, the SEM100 is provided with an extraction electrode 102 and an anode 103, which is placed onto one end of a beam guide tube 104 of the SEM 100. For example, the electron source 101 is implemented as a thermal field emitter. However, the present invention is not limited to such an electron source 101. Rather, any source of electrons may be utilized.
The electrons emitted from the electron source 101 form a primary electron beam. These electrons are accelerated to the anode potential due to the potential difference between the electron source 101 and the anode 103. In the embodiment shown here, the anode potential is 100V to 35kV, for example 5kV to 15kV, in particular 8kV, with respect to the ground potential of the housing of the sample chamber 120. Alternatively, however, the anode potential may also be at ground potential.
Two condenser lenses, in particular a first condenser lens 105 and a second condenser lens 106, are arranged on the beam guide tube 104. Here, starting from the electron source 101, seen in the direction of the first objective lens 107, a first condenser lens 105 is arranged in front, followed by a second condenser lens 106. The following facts are explicitly mentioned: additional embodiments of SEM100 may have only a single condenser lens. The first diaphragm unit 108 is arranged between the anode 103 and the first condenser lens 105. Together with the anode 103 and the beam guide tube 104, the first diaphragm unit 108 is at a high voltage potential (in particular, the potential of the anode 103), or is connected to ground. The first diaphragm unit 108 has a plurality of first apertures 108A, one of which is illustrated in fig. 2. For example, there are two first apertures 108A. Each of the plurality of first apertures 108A has a different aperture diameter. A desired first aperture 108A may be disposed on the optical axis OA of the SEM100 by an adjustment mechanism (not shown). The following facts are explicitly mentioned: in further embodiments, the first diaphragm unit 108 may be provided with only a single first aperture 108A. In this embodiment, there may be no adjustment mechanism. The first diaphragm unit 108 is then designed to be stationary. A fixed second diaphragm unit 109 is arranged between the first condenser lens 105 and the second condenser lens 106. As an alternative thereto, it is provided to implement the second diaphragm unit 109 in a movable manner.
The first objective lens 107 has pole pieces 110 with holes formed therein. The beam guide tube 104 is guided through this aperture. The coil 111 is disposed in the pole piece 110.
An electrostatic delay device is arranged in the lower region of the beam guide tube 104. This includes a separate electrode 112 and a tubular electrode 113. A tubular electrode 113 is arranged at one end of the beam guide tube 104, which end faces an object 125 arranged on a movably embodied object holder 114.
The tubular electrode 113 together with the beam guide tube 104 is at the potential of the anode 103, while the separate electrode 112 and the object 125 are at a lower potential with respect to the potential of the anode 103. In the present case, this is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam may be decelerated to a desired energy required for inspecting the object 125.
SEM100 further includes a scanning device 115 by which the primary electron beam may be deflected and scanned over object 125. Here, the electrons of the primary electron beam interact with the object 125. Due to this interaction, interacting particles are generated, which are detected. Specifically, electrons are emitted from the surface of the object 125 (so-called secondary electrons), or electrons of the primary electron beam are backscattered as interacting particles (so-called backscattered electrons).
The object 125 and the individual electrodes 112 may also be at different potentials and at potentials different from ground. Thereby the position of the retardation of the primary electron beam with respect to the object 125 can be set. For example, if the delay occurs very close to the object 125, the imaging aberration becomes small.
A detector arrangement comprising a first detector 116 and a second detector 117 is arranged in the beam guide tube 104 for detecting secondary and/or backscattered electrons. Here, in the beam guide tube 104, the first detector 116 is disposed on the source side along the optical axis OA, and the second detector 117 is disposed on the object side along the optical axis OA. The first detector 116 and the second detector 117 are arranged to be offset from each other in the direction of the optical axis OA of the SEM 100. Both the first detector 116 and the second detector 117 have respective passage openings through which the primary electron beam can pass. The first detector 116 and the second detector 117 are at about the potential of the anode 103 and the beam guide tube 104. Optical axes OA of SEM100 extend through the respective channel openings.
The second detector 117 is mainly used for detecting secondary electrons. Upon exiting the object 125, the secondary electrons initially have low kinetic energy and random directions of motion. By the strong extraction field emitted from the tubular electrode 113, the secondary electrons are accelerated in the direction of the first objective lens 107. The secondary electrons enter the first objective lens 107 approximately in parallel. The beam diameter of the secondary electron beam is also kept small in the first objective lens 107. The first objective lens 107 then has a strong effect on the secondary electrons and generates a relatively short focus of the secondary electrons at a sufficiently steep angle with respect to the optical axis OA, so that the secondary electrons spread apart from each other downstream of the focal point and strike the second detector 117 on its active area. In contrast, the second detector 117 detects only a small portion of the electrons backscattered at the object 125, i.e., backscattered electrons having a relatively high kinetic energy compared to the secondary electrons exiting the object 125. The high kinetic energy of the backscattered electrons as they exit the object 125 and the angle with respect to the optical axis OA has the effect that the beam waist (i.e. the beam area with the smallest diameter) of the backscattered electrons is located near the second detector 117. Most of the backscattered electrons pass through the passage opening of the second detector 117. Thus, the first detector 116 is basically used to detect backscattered electrons.
In further embodiments of SEM100, first detector 116 may additionally be implemented with an opposite field grating 116A. The opposite field grating 116A is arranged on the side of the first detector 116 facing the object 125. The opposite field grating 116A has a negative potential with respect to the potential of the beam guide tube 104, so that only backscattered electrons having high energy pass through the opposite field grating 116A to the first detector 116. Additionally or alternatively, the second detector 117 has a further opposite field grating having a similar embodiment and having a similar function as the previously described opposite field grating 116A of the first detector 116.
Further, SEM100 has a cell detector 119, such as an Everhart-Thornley (efettxonley) detector or an ion detector, in sample cell 120, which has a detection surface coated with metal and blocking light.
The detection signals generated by the first detector 116, the second detector 117, and the chamber detector 119 are used to generate one or more images of the surface of the object 125.
The following facts are explicitly mentioned: the apertures of the first diaphragm unit 108 and the second diaphragm unit 109 and the passage openings of the first detector 116 and the second detector 117 are shown in an exaggerated manner. The channel openings of the first detector 116 and the second detector 117 have an extension perpendicular to the optical axis OA in the range of 0.5mm to 5 mm. These passage openings are, for example, of annular design and have a diameter in the range from 1mm to 3mm, perpendicular to the optical axis OA.
The second diaphragm unit 109 is configured in the embodiment illustrated here as a pinhole diaphragm and is provided with a second aperture 118 for letting through the primary electron beam, which second aperture has an extension in the range of 5 μm to 500 μm, for example 35 μm. As an alternative thereto, it is provided in a further embodiment that the second diaphragm unit 109 is provided with a plurality of apertures which can be mechanically displaced with respect to the primary electron beam or which can be reached by the primary electron beam by using electrical and/or magnetic deflection elements. The second diaphragm unit 109 is implemented as a pressure stage diaphragm. This separates a first region, in which the electron source 101 is arranged and in which an ultra-high vacuum (10) is present, from a second region-7hPa to 10-12hPa) with a high vacuum (10) in the second region-3hPa to 10-7hPa). The second region is an intermediate pressure region of the beam guide tube 104, which leads to the sample chamber 120.
The sample chamber 120 is under vacuum. To generate a vacuum, a pump (not shown) is arranged at the sample chamber 120. In the embodiment shown in fig. 2, the sample chamber 120 operates within a first pressure range or within a second pressure range. The first pressure range includes only 10 or less-3Pressure of hPa, and the second pressure range only includes pressures greater than 10-3Pressure of hPa. To ensure the pressure range, the sample chamber 120 is vacuum sealed.
SEM100 further comprises a third detector 121 arranged in sample chamber 120. More precisely, the third detector 121 is arranged downstream of the sample stage 122 as viewed from the electron source 101 along the optical axis OA. Sample stage 122, and thus object holder 114, may be rotated in such a way that the primary electron beam may radiate through object 125 disposed on object holder 114. When the primary electron beam passes through the object 125 to be inspected, electrons of the primary electron beam interact with the material of the object 125 to be inspected. The third detector 121 detects electrons passing through the object 125 to be inspected.
At the sample chamber 120 a radiation detector 500 is arranged for detecting interaction radiation, such as x-ray radiation and/or cathodoluminescent light. The radiation detector 500, the first detector 116, the second detector 117 and the chamber detector 119 are connected to a control unit 123 having a monitor 124. In the embodiment illustrated here, the monitor 124 is provided with an additional light signaling device 127, for example a red LED, and/or with an additional acoustic signaling device 128 which can emit a warning sound. The third detector 121 is also connected to the control unit 123. Not shown for clarity. The control unit 123 processes detection signals generated by the first detector 116, the second detector 117, the chamber detector 119, the third detector 121 and/or the radiation detector 500 and displays the detection signals in the form of an image on the monitor 124.
The control unit 123 also has a database 126 in which data is stored and from which data is read out.
The control unit 123 of the SEM100 includes a processor. A computer program product comprising program code is loaded into the processor, which when executed performs the method for operating SEM 100. This is explained in more detail below.
FIG. 3 showsA particle beam device in the form of a combining device 200. The combining means 200 has two particle beam columns. First, as already shown in fig. 2, the assembly 200 is provided with SEM100, but without sample chamber 120. Rather, SEM100 is disposed in sample chamber 201. The sample chamber 201 is under vacuum. In order to generate a vacuum, a pump (not shown) is arranged at the sample chamber 201. In the embodiment shown in fig. 3, the sample chamber 201 operates within a first pressure range or within a second pressure range. The first pressure range includes only 10 or less-3Pressure of hPa, and the second pressure range only includes pressures greater than 10-3Pressure of hPa. To ensure the pressure range, the sample chamber 201 is vacuum sealed.
Arranged in the sample chamber 201 is a chamber detector 119, which is implemented, for example, in the form of an Everhart-Thornley detector or an ion detector and which has a detection surface coated with a light-blocking metal. Further, a third detector 121 is arranged in the sample chamber 201.
SEM100 is used for generating a first particle beam, in particular a primary electron beam as has been further described above, and has an optical axis as has been specified above, which is provided in fig. 3 with reference numeral 709 and is also referred to as first beam axis in the following. Secondly, the combination 200 is provided with an ion beam device 300, which is also arranged at the sample chamber 201. The ion beam device 300 likewise has an optical axis, which is provided in fig. 3 with the reference numeral 710 and is also referred to as second beam axis in the following.
SEM100 is arranged vertically with respect to sample chamber 201. In contrast, ion beam device 300 is arranged at an angle of approximately 0 ° to 90 ° with respect to SEM 100. An arrangement of approximately 50 is shown by way of example in figure 3. The ion beam apparatus 300 comprises a second beam generator in the form of an ion beam generator 301. The ion beam generator 301 generates ions that form a second particle beam in the form of an ion beam. These ions are accelerated by an extraction electrode 302 at a predeterminable potential. The second particle beam then passes through the ion optical unit of the ion beam device 300, wherein the ion optical unit includes a condenser lens 303 and a second objective lens 304. Second objective 304 ultimately produces an ion probe that is focused onto object 125 disposed on object holder 114. Object holder 114 is arranged at sample stage 122.
An adjustable or selectable diaphragm 306, a first electrode arrangement 307 and a second electrode arrangement 308 are arranged above the second objective 304 (i.e. in the direction of the ion beam generator 301), wherein the first electrode arrangement 307 and the second electrode arrangement 308 are implemented as scanning electrodes. The second particle beam is scanned over the surface of the object 125 by a first electrode arrangement 307 and a second electrode arrangement 308, wherein the first electrode arrangement 307 acts in a first direction and the second electrode arrangement 308 acts in a second direction, the second direction being opposite to the first direction. Thus, scanning is performed, for example, in the x direction. The scanning in the y-direction perpendicular thereto is caused by further electrodes (not shown) rotated by 90 ° at the first electrode arrangement 307 and the second electrode arrangement 308.
As explained above, object holder 114 is arranged at sample stage 122. In the embodiment shown in fig. 3, sample stage 122 is also implemented to be movable in three directions arranged perpendicularly to each other, specifically, the x direction (first stage axis), the y direction (second stage axis), and the z direction (third stage axis). Further, sample stage 122 may be rotatable about two rotation axes (stage rotation axes) arranged perpendicular to each other.
To better illustrate the individual elements of the combination device 200, the distances between the individual elements of the combination device 200 illustrated in FIG. 3 are shown in an exaggerated manner.
At the sample chamber 201 a radiation detector 500 is arranged for detecting interaction radiation, such as x-ray radiation and/or cathodoluminescent light. The radiation detector 500 is connected to a control unit 123 having a monitor 124. In the embodiment illustrated here, the monitor 124 is provided with an additional light signaling device 127, for example a red LED, and/or with an additional acoustic signaling device 128 which can emit a warning sound.
The control unit 123 processes detection signals generated by the first detector 116, the second detector 117 (not shown in fig. 2), the chamber detector 119, the third detector 121, and/or the radiation detector 500, and displays the detection signals in the form of an image on the monitor 124.
The control unit 123 also has a database 126 in which data is stored and from which data is read out.
The control unit 123 of the combination device 200 comprises a processor. A computer program product comprising program code is loaded into the processor, which program code when executed performs the method for operating the combination means 200. This is explained in more detail below.
Fig. 4 is a schematic illustration of a further embodiment of a particle beam device according to the present invention. This embodiment of the particle beam device is provided with reference number 400 and comprises a mirror corrector for correcting e.g. chromatic and/or spherical aberrations. The particle beam device 400 comprises a particle beam column 401, which is implemented as an electron beam column and substantially corresponds to the electron beam column of the corrected SEM. However, the particle beam device 400 is not limited to an SEM with mirror correctors. Rather, the particle beam device may comprise any type of corrector unit.
The particle beam column 401 comprises a particle beam generator in the form of an electron source 402 (cathode), an extraction electrode 403 and an anode 404. For example, the electron source 402 is implemented as a thermal field emitter. Electrons emitted from the electron source 402 are accelerated to the anode 404 due to a potential difference between the electron source 402 and the anode 404. Thus, a particle beam in the form of an electron beam is formed along the first optical axis OA 1.
After the particle beam is emitted from the electron source 402, the particle beam is directed along a beam path corresponding to the first optical axis OA 1. The first electrostatic lens 405, the second electrostatic lens 406 and the third electrostatic lens 407 are used to guide the particle beam.
Furthermore, a beam steering device is used to position the particle beam along the beam path. The beam guiding device of this embodiment comprises a source-setting unit having two magnetic deflection units 408 arranged along a first optical axis OA 1. Further, the particle beam device 400 includes an electrostatic beam deflection unit. A first electrostatic beam deflection unit 409 (also implemented as a quadrupole in further embodiments) is arranged between the second and third electrostatic lenses 406, 407. A first electrostatic beam deflection unit 409 is also arranged downstream of the magnetic deflection unit 408. A first multipole unit 409A in the form of a first magnetic deflection unit is arranged on one side of the first electrostatic beam deflection unit 409. Furthermore, a second multipole unit 409B in the form of a second magnetic deflection unit is arranged on the other side of the first electrostatic beam deflection unit 409. A first electrostatic beam deflection unit 409, a first multipole unit 409A and a second multipole unit 409B are provided for positioning the particle beam with respect to the axis of the third electrostatic lens 407 and the entrance window of the beam deflection device 410. The first electrostatic beam deflection unit 409, the first multipole unit 409A and the second multipole unit 409B may interact like a Wien filter (Wien filter). A further magnetic deflection element 432 is arranged at the entrance of the beam deflection device 410.
The beam deflection device 410 is used as a beam deflector for deflecting the beam in a specific manner. The beam deflecting device 410 includes a plurality of magnetic sectors, specifically, a first magnetic sector 411A, a second magnetic sector 411B, a third magnetic sector 411C, a fourth magnetic sector 411D, a fifth magnetic sector 411E, a sixth magnetic sector 411F, and a seventh magnetic sector 411G. The particle beam enters the beam deflection device 410 along a first optical axis OA1 and is deflected by the beam deflection device 410 in the direction of a second optical axis OA 2. Beam deflection is performed through the first magnetic sector 411A, through the second magnetic sector 411B, and through the third magnetic sector 411C at an angle of 30 ° to 120 °. The second optical axis OA2 is oriented at the same angle relative to the first optical axis OA 1. The beam deflection device 410 also deflects the particle beam directed along the second optical axis OA2 precisely in the direction of the third optical axis OA 3. The beam deflection is provided by third magnetic sector 411C, fourth magnetic sector 411D, and fifth magnetic sector 411E. In the embodiment in fig. 4, the deflection with respect to the second optical axis OA2 and with respect to the third optical axis OA3 is provided by deflecting the particle beam through an angle of 90 °. Accordingly, the third optical axis OA3 extends coaxially with respect to the first optical axis OA 1. However, the following facts are mentioned: the particle beam device 400 according to the invention described here is not limited to a deflection angle of 90 °. Rather, the beam deflection device 410 may select any suitable deflection angle, e.g. 70 ° or 110 °, such that the first optical axis OA1 does not extend coaxially with respect to the third optical axis OA 3. For more details of the beam-deflecting device 410, reference is made to WO 2002/067286 a 2.
After the particle beam has been deflected by the first magnetic sector 411A, the second magnetic sector 411B and the third magnetic sector 411C, the particle beam is directed along the second optical axis OA 2. The particle beam is directed to the electrostatic mirror 414 and travels on its path to the electrostatic mirror 414 along the fourth electrostatic lens 415, the third multipole unit in the form of a magnetic deflection unit 416A, the second electrostatic beam deflection unit 416, the third electrostatic beam deflection unit 417, and the fourth multipole unit in the form of a magnetic deflection unit 416B. The electrostatic mirror 414 includes a first mirror electrode 413A, a second mirror electrode 413B, and a third mirror electrode 413C. The electrons of the particle beam reflected back at the electrostatic mirror 414 again travel along the second optical axis OA2 and re-enter the beam deflection device 410. These electrons are then deflected by third magnetic sector 411C, fourth magnetic sector 411D, and fifth magnetic sector 411E to a third optical axis OA 3.
Electrons of the particle beam exit beam deflection device 410 and are directed along a third optical axis OA3 to an object 425 intended to be inspected and arranged in object holder 114. On the way to the object 425, the particle beam is guided to the fifth electrostatic lens 418, the beam guide tube 420, the fifth multipole unit 418A, the sixth multipole unit 418B and the objective lens 421. The fifth electrostatic lens 418 is an electrostatic immersion lens. The particle beam is decelerated or accelerated to the potential of the beam guide tube 420 by the fifth electrostatic lens 418.
Through the objective lens 421, the particle beam is focused into a focal plane in which the object 425 is arranged. Object holder 114 is arranged at movable sample stage 424. Movable sample stage 424 is disposed in a sample chamber 426 of particle beam device 400. Sample stage 424 is implemented to be movable in three directions arranged perpendicular to each other, specifically, the x-direction (first stage axis), the y-direction (second stage axis), and the z-direction (third stage axis). Further, sample stage 424 may be rotated about two rotation axes (stage rotation axes) arranged perpendicular to each other.
The objective lens 421 may be implemented as a combination of a magnetic lens 422 and a sixth electrostatic lens 423. The end of the beam guide tube 420 may further be an electrode of an electrostatic lens. After exiting the beam guide tube 420, the particles of the particle beam device are decelerated to the potential of the object 425. The objective lens 421 is not limited to the combination of the magnetic lens 422 and the sixth electrostatic lens 423. Rather, the objective lens 421 may take any suitable form. The objective lens 421 may also be implemented as a pure magnetic lens or a pure electrostatic lens, for example.
The particle beam focused on the object 425 interacts with the object 425. Interacting particles are generated. Specifically, secondary electrons are emitted from the object 425, or backscattered electrons are backscattered at the object 425. The secondary or backscattered electrons are again accelerated and directed into the beam guide tube 420 along the third optical axis OA 3. In particular, the trajectories of the secondary and backscattered electrons extend in the opposite direction to the particle beam on the course of the beam path of the particle beam.
The particle beam device 400 comprises a first analytical detector 419 arranged along the beam path between the beam deflection apparatus 410 and the objective lens 421. Secondary electrons traveling in a direction oriented at a large angle with respect to third optical axis OA3 are detected by first analytical detector 419. Backscattered electrons and secondary electrons having a small axial distance with respect to the third optical axis OA3 at the location of the first analysis detector 419, i.e. backscattered electrons and secondary electrons having a small distance from the third optical axis OA3 at the location of the first analysis detector 419, enter the beam deflection device 410 and are deflected along the detection beam path 427 by the fifth magnetic sector 411E, the sixth magnetic sector 411F and the seventh magnetic sector 411G to the second analysis detector 428. For example, the deflection angle is 90 ° or 110 °.
The first analytical detector 419 generates a detection signal which is generated mainly by the emitted secondary electrons. The detection signal generated by the first analysis detector 419 is directed to the control unit 123 and is used to obtain information about the characteristics of the region of interaction of the focused particle beam with the object 425. In particular, the focused particle beam is scanned over the object 425 using a scanning device 429. From the detection signal generated by the first analysis detector 419, an image of the scanned area of the object 425 may then be generated and displayed on the display unit. The display unit is, for example, a monitor 124 arranged at the control unit 123. In the embodiment illustrated here, the monitor 124 is provided with an additional light signaling device 127, for example a red LED, and/or with an additional acoustic signaling device 128 which can emit a warning sound.
The second analysis detector 428 is also connected to the control unit 123. The detection signal of the second analysis detector 428 is passed to the control unit 123 and used to generate an image of the scanned area of the object 425 and to display this image on the display unit. The display unit is, for example, a monitor 124 arranged at the control unit 123.
At the sample chamber 426, a radiation detector 500 is arranged for detecting interaction radiation, such as x-ray radiation and/or cathodoluminescent light. The radiation detector 500 is connected to a control unit 123 having a monitor 124. The control unit 123 processes the detection signals of the radiation detector 500 and displays these detection signals in the form of images on the monitor 124.
The control unit 123 also has a database 126 in which data is stored and from which data is read out.
The control unit 123 of the particle beam device 400 comprises a processor. A computer program product comprising program code is loaded into the processor, which program code, when executed, performs the method for operating the particle beam device 400.
The invention is described in more detail below with reference to SEM100 according to fig. 2. The details of the combiner 200 and of the particle beam device 400 are equally applicable mutatis mutandis.
As outlined below, due to the technical configuration of the first objective 107 and due to the technical configuration of the scanning device 115, the area of the object 125 to be imaged and scanned by the primary electron beam is limited.
The limitation of the area of the object 125 to be imaged and scanned by the primary electron beam is caused by the optical configuration of the first objective 107. The primary electron beam is focused onto an object 125 using a first objective lens 107. In this case, the primary electron beam is focused onto a scanning area of the object 125. Due to the optical embodiment of the first objective 107, the scanning area is implemented as a first zone. The shape and size of the first zone, in particular the zone, depends on the optical setup of the first objective 107 and (as will also be explained further below) on the configuration and embodiment of the scanning device 115. The first region may have any shape. For example, if the first objective 107 is implemented as a circular lens, the aforementioned scanning area is likewise implemented as a circle. It should be explicitly noted, however, that the present invention is not limited to the circular shape of the first region. Rather, any shape of the first zone suitable for the present invention may be used in the method according to the present invention.
The limitation of the area of the object 125 to be imaged and scanned by the primary electron beam is caused by the scanning device 115 of the SEM 100. Fig. 5 shows a schematic illustration of a scanning device 115 according to the SEM100 of fig. 2. The scanning device in the form of the electrode arrangements 307, 308 of the combined device 200 according to fig. 3 and the scanning device 429 of the particle beam device 400 according to fig. 4 have the same or corresponding settings as the settings of the scanning device 115 of the SEM 100. The scanning device 115 comprises a first deflection device 800 and a second deflection device 801. The first deflection device 800 is used to deflect the primary electron beam in the x-direction and the second deflection device 801 is used to deflect the primary electron beam in the y-direction. The first deflection device 800 is wired to a first deflection amplifier unit 802. The first deflection amplifier unit 802 provides a first voltage or a first current for driving the first deflection device 800. The second deflection device 801 is line connected to a second deflection amplifier unit 803. The second deflection amplifier unit 803 supplies a second voltage or a second current for driving the second deflection device 801.
The first deflection device 800 and the second deflection device 801, due to their electronic design, can provide a voltage, for example, up to a maximum amplitude of the voltage or a current, for example, up to a maximum amplitude of the current. The voltage with the maximum amplitude or the current with the maximum amplitude enables the first deflection device 800 and the second deflection device 801 to maximally deflect the primary electron beam of the SEM 100. Therefore, when a voltage having the maximum amplitude is fed, the maximum scanning field is obtained. For example, the maximum scan field has a square or rectangular shape. The maximum scan field is implemented as the second region. By reducing the amplitude from the maximum amplitude to a smaller amplitude, a field smaller than the maximum field is obtained. Thus, the desired magnification of the object 125 can be adjusted in a targeted manner.
The first region of the scanning area has a first shape, such as the circular shape mentioned above. The second region of the scan field has a second shape, such as the square or rectangular shape mentioned above. Thereby providing that the first shape is different from the second shape. It should again be explicitly pointed out that the invention is not limited to a circular shape of the first region and/or a square or rectangular shape of the second region. Rather, any shape of the first region and/or the second region suitable for the present invention may be used in the method according to the present invention.
Fig. 6 shows an embodiment of the method according to the invention, which is performed by the SEM100 according to fig. 2. In a method step S1, a particle beam in the form of a primary electron beam is generated by the electron source 101. The particle beam in the form of a primary electron beam is then focused onto the object 125 by means of the first objective lens 107. Furthermore, the scanning device 115 is set in such a way that the first deflection device 800 and the second deflection device 801 supply a voltage with a maximum amplitude or a current with a maximum amplitude, so that a maximum scanning field is obtained (method step S2).
The maximum scan area selected as a result of the adjustment of the first objective lens 107 is then aligned with the maximum scan field, as illustrated in fig. 7. Fig. 7 shows a schematic illustration of a scan area 601 and a scan field 602 of the SEM100 according to fig. 2. The first region of the scan area 601 and the second region of the scan field 602 are aligned in such a way that the first region of the scan area 601 is completely located in the second region of the scan field 602. In other words, the second region of the scan field 602 completely covers the first region of the scan area 601. In other words, the first region of the scan area 601 is entirely located in the second region of the scan field 602.
The first region of the scan area 601 and the second region of the scan field 602 have a first overlap region 603. In other words, the first region of the scanning area 601 and the second region of the scanning field 602 have a common area, i.e., the first overlap area 603. In the embodiment shown in fig. 7, the common area, i.e. the first overlap area 603, corresponds to the first region of the scanning area 601. A second non-overlapping region 604 of a second region of the scan field 602 is shown in fig. 7 in shaded form. Thus, the shaded area, i.e., the non-overlapping area 604 of the second region of the scan field 602, is an area that does not intersect the first region of the scan area 601.
As illustrated in fig. 6, method step S3 relates to detecting the interacting particles, e.g. in the form of secondary and/or backscattered electrons, by at least one of the following detectors:
a first detector 116, a second detector 117, a third detector 121, and a chamber detector 119. Additionally or alternatively, the method involves detecting the interacting radiation in the form of x-rays and/or cathodoluminescent light by radiation detector 500. During the detection of the interacting particles and/or interacting radiation, the aforementioned detector generates a detection signal (according to method step S4 of fig. 6).
Method step S5 then involves generating an image of object 125 using the primary electron beam and/or analyzing object 125. For this purpose only those detection signals are used which are generated as a result of the detected interacting particles and/or interacting radiation originating from the first overlapping area 603. Thus, detection signals generated due to the interaction of the primary electron beam with the area of the object 125 comprising the first overlap area 603 of the first and second regions are used for generating an image and/or for analyzing the object 125. Those detection signals generated due to the detected interacting particles and/or interacting radiation originating from the second non-overlapping region 604 of the second region of the scan field 602 are not used and/or masked out when generating the image of the object 125 and/or when analyzing the object 125. Method step S6 then involves displaying the generated image and/or the result of the analysis of the object 125 on the monitor 124 of the SEM 100.
In order that the generation of detection signals due to detected interacting particles and/or interacting radiation originating from the second non-overlapping area 604 of the second region of the scan field 602 is not used and/or masked out when generating an image of the object 125 and/or when analyzing the object 125, an embodiment of the method according to the invention provides for arranging a mask on top of the second non-overlapping area 604 of the second region of the scan field 602. This is done, for example, in method step S5 according to fig. 6. The mask has the following functions: the detection signals generated with the detected interacting particles and/or interacting radiation originating from the second non-overlapping region 604 are not used when generating the image of the object 125 and/or when analyzing the object 125. The mask may be a physical mask, for example. As an alternative thereto, it is provided that the mask is implemented as an electronic mask. For example, an electronic mask is generated by image processing and/or data processing. For example, it is provided that in the control unit 123, by image processing and/or data processing, detection signals generated due to detected interacting particles and/or interacting radiation originating from the second non-overlapping region 604 of the scan field 602 are masked out when generating an image of the object 125 and/or when analyzing the object 125, and thus do not contribute to generating an image of the object 125 and/or analyzing the object 125. Electronic masks are particularly advantageous if the physical mask cannot be easily created because of the undersize. In particular, the method according to the invention provides for having the mask cover and mask a second non-overlapping area 604 of the second region of the scan field 602. For example, a second non-overlapping region 604 is provided that causes the mask to completely cover and mask a second region of the scan field 602.
In order that the generation of detection signals due to detected interacting particles and/or interacting radiation originating from the second non-overlapping region 604 of the second region of the scan field 602 is not used and/or masked out when generating an image of the object 125 and/or when analyzing the object 125, a further embodiment of the method according to the invention provides in method step S5 for selecting the first region of the scan region 601 and the second region of the scan field 602 in such a way that the first region and the second region have a boundary region. This is schematically illustrated in fig. 8. Fig. 8 is based on fig. 7. Like components are provided with like reference numerals. In fig. 8, the boundary area is given by the outer shape of the first region of the scan area 601. The outer shape of the scanning area 601 in fig. 8 is implemented as a ring (i.e., a circle).
In the border area, the first area of the scan area 601 adjoins the second non-overlapping area 604 of the second area of the scan field 602. In order to define which detection signals are used for generating an image of the object 125 and/or for analyzing the object 125, at least one straight line is used in this embodiment of the method according to the invention. The straight line is, for example, a virtual straight line used during image processing and/or data processing in the control unit 123. In the embodiment illustrated in fig. 8, four straight lines are aligned along the boundary area, namely a first straight line 605, a second straight line 606, a third straight line 607 and a fourth straight line 608. Each of the four straight lines 605 to 608 has a first side facing a first region of the scan area 601 and a second side facing a non-overlapping region 604 of a second region of the scan field 602. The embodiments of the method according to the invention described herein provide for not using the detection signal generated with the detected interacting particles and/or interacting radiation originating from the second non-overlapping region 604 when generating the image of the object 125 and/or when analyzing the object 125. Thus, the interacting particles and/or interacting radiation originate from the second non-overlapping region 604 arranged on the second side of the lines 605 to 608. These are not considered in generating an image of the object 125 and/or analyzing the object 125. In contrast, detection signals generated with detected interacting particles and/or interacting radiation originating from the first overlap region 603 are used when generating an image of the object 125 and/or when analyzing the object 125. The first overlap region 603 is arranged at a first side of the lines 605 to 608. The embodiments described herein may be summarized as follows: detection signals generated from interacting particles and/or interacting radiation originating from regions on a first side of the lines 605 to 608 are used when generating an image of the object 125 and/or when analyzing the object 125. In contrast, detection signals generated from interacting particles and/or interacting radiation originating from regions on the second side of the lines 605 to 608 are not used when generating an image of the object 125 and/or when analyzing the object 125. The number of straight lines is not limited to 4. Rather, any desired number of straight lines may be used.
Fig. 9 shows a further embodiment of the method according to the invention, which is performed by the SEM100 according to fig. 2. The embodiment of the method according to the invention according to fig. 9 is based on the embodiment of the method according to the invention according to fig. 6. The embodiment of the method according to the invention according to fig. 9 has an additional step S1A, which is carried out, for example, between method steps S1 and S2. As an alternative thereto, method step S1A is performed before method step S1 and/or after method step S5. As a further alternative thereto, method steps S1A are performed simultaneously with method steps S1 to S5. In method step S1A, the magnification of SEM100 is adjusted. For example, the magnification of SEM100 changes from a small magnification (1: 1000) to a large magnification (e.g., 1: 500.000). In an embodiment of the method according to the invention, additionally or alternatively, a continuous adjustment of the magnification of the SEM100 is provided, wherein the method steps mentioned above and/or further mentioned below are also performed continuously. In yet a further embodiment of the method according to the invention, additionally or alternatively, it is provided to adjust the magnification of the SEM100 in discrete steps, wherein the method steps mentioned above or further mentioned below are also performed in discrete steps. For example, if the above-mentioned mask is used, the size of the mask is also changed according to the adjusted magnification during adjustment of the magnification of the SEM 100.
As described above, monitor 124 of SEM100 is provided with an additional light signaling device 127, such as a red LED, and/or with an additional acoustic signaling device 128 that may emit a warning sound. In an embodiment of the method according to the present invention, additionally or alternatively, it is provided that the execution of the method according to the present invention is indicated to the user of SEM100 by means of an optical signal device 127 and/or an acoustic signal device 128. This is done, for example, in method step S5 of fig. 6. Thus, the user is notified: the detection signals generated due to the detected interacting particles and/or interacting radiation originating from the first overlapping area 603 are used when generating the image of the object 125 and/or when analyzing the object 125, whereas the detection signals generated due to the detected interacting particles and/or interacting radiation originating from the second non-overlapping area 604 are not used when generating the image of the object 125 and/or when analyzing the object 125.
As described above, the control unit 123 of the SEM100 has the database 126 in which data is stored and from which data is read out. The database 126 is then used in a further embodiment of the method according to the invention, which is illustrated in fig. 10. Fig. 10 shows a further embodiment of the method according to the invention, which is performed by the SEM100 according to fig. 2. The embodiment of the method according to the invention according to fig. 10 is based on the embodiment of the method according to the invention according to fig. 6. The embodiment of the method according to the invention according to fig. 10 has additional method steps S7 and S8, which are performed, for example, after method step S5. The image generated in method step S5 is a first image of the object 125. Furthermore, the analysis of the object 125 generated in method step S5 is a first analysis of the object 125. In the embodiment of the method according to the invention according to fig. 10, it is provided that a second image of the object 125 is generated and/or a second analysis of the object 125 is performed (method step S7). The detection signals generated due to the interaction from the entire scan field 602 are used to perform the generation of a second image of the object 125 or to perform a second analysis of the object 125. Thus, those detection signals generated with detected interacting particles and/or interacting radiation originating from the first overlap region 603 are used. Furthermore, those detection signals generated with detected interacting particles and/or interacting radiation originating from a second non-overlapping region 604 of a second region of the scan field 602 are used. Method step S8 then involves storing the first image and/or the second image in database 126. Additionally or alternatively, storing the results of the first analysis and/or the second analysis in the database 126 is provided. The first image and/or the first analysis is thus based on the interaction from the first overlap region 603. In contrast, the second image and/or the second analysis is based on the interaction from both the first overlapping region 603 and the second non-overlapping region 604.
In an even further embodiment of the method according to the invention, additionally or alternatively, shifting 125 the scanning field 602 over the object by means of the scanning device 115 is provided. If for example the above mentioned mask is used in this even further embodiment of the method according to the invention, this mask is shifted together with the scan field 602 so that the following are still always the case: only detection signals originating from regions of the object 125 exhibiting few aberrations are used for generating an image of the object 125 and/or for analyzing the object 125. Such a shift of the scanning field 602 may be realized, for example, by a voltage offset or a current offset at the output stage of the first deflection amplifier unit 802 and/or the second deflection amplifier unit 803 of the scanning device 115.
Fig. 11 shows a further schematic illustration of a scan area 601 and a scan field 602, on the basis of which a further embodiment of the method according to the invention is explained. The magnification of SEM100 is adjusted in such a way that the maximum scan area 601 is only partially covered by the scan field 602. The first region of the scan area 601 and the second region of the scan field 602 have a first overlap region 603 shown in a shaded manner in fig. 11. The first region 604A of the field 602, the second region 604B of the field 602, the third region 604C of the field 602, and the fourth region 604D of the field 602 do not overlap with the scan region 601. Thus, the first region 604A of the field 602, the second region 604B of the field 602, the third region 604C of the field 602, and the fourth region 604D of the field 602 are non-overlapping regions of the second region of the field 602. In generating the image of the object 125 only those detection signals are used which are generated due to detected interacting particles and/or interacting radiation originating from the first overlap region 603. Thus, detection signals generated due to the interaction of the primary electron beam with the area of the object 125 comprising the first overlap area 603 of the first and second regions are used for generating an image and/or for analyzing the object 125. Those detection signals generated due to the detected interacting particles and/or interacting radiation originating from the second non-overlapping regions 604A to 604D of the second region of the scan field 602 are not used and/or masked out when generating the image of the object 125 and/or when analyzing the object 125. Further, the first area 601A and the second area 601B of the scanning area 601 are not considered during image generation because the primary electron beam does not reach the first area 601A and the second area 601B of the scanning area 601 due to the configuration of the scanning device 115.
As explained above, an embodiment of the method according to the invention provides for displacing the scanning field 602 over the object 125 by means of the scanning device 115. In contrast to the embodiment according to fig. 11, fig. 12 shows a shifted scan field 602. Here, the magnification of SEM100 is also adjusted in such a way that the maximum scan area 601 is only partially covered by the scan field 602. The first region of the scan area 601 and the second region of the scan field 602 have a first overlap region 603 shown in fig. 12 in a shaded manner. The first region 604A and the second region 604B of the scan field 602 do not overlap with the scan region 601. Thus, the first region 604A and the second region 604B of the field 602 are non-overlapping regions of the second region of the field 602. In generating the image of the object 125 only those detection signals are used which are generated due to detected interacting particles and/or interacting radiation originating from the first overlap region 603. Thus, detection signals generated due to the interaction of the primary electron beam with the area of the object 125 comprising the first overlap area 603 of the first and second regions are used for generating an image and/or for analyzing the object 125. Those detection signals generated due to the detected interacting particles and/or interacting radiation originating from the second non-overlapping regions 604A and 604B of the second region of the scan field 602 are not used and/or masked out when generating the image of the object 125 and/or when analyzing the object 125. Further, the first area 601A and the second area 601B of the scanning area 601 are not considered during image generation because the primary electron beam does not reach the first area 601A and the second area 601B of the scanning area 601 due to the configuration of the scanning device 115.
Fig. 13 shows an even further schematic illustration of a scan area 601 and a scan field 602, on the basis of which further embodiments of the method according to the invention are explained. Fig. 13 is based on fig. 7. First, reference is made to the explanations given above, which also apply here. Fig. 13 shows the monitor 124 implemented as a rectangle. The monitor 124 has a display area 124A. The image of the object 125 is then intended to be displayed on said display area 124A. As described above, this embodiment provides for aligning the first region of the scan area 601 with the second region of the scan field 602, which is implemented as a square in fig. 13, in such a way that the first region of the scan area 601 is located completely in the second region of the scan field 602. The first region of the scan area 601 and the second region of the scan field 602 have a first overlap region 603. In the embodiment shown in fig. 13, the common area, i.e. the first overlap area 603, corresponds to the first region of the scanning area 601. A second non-overlapping region 604 of a second region of the scan field 602 is shown in fig. 13 in shaded form. Thus, the shaded area, i.e., the non-overlapping area 604 of the second region of the scan field 602, is an area that does not intersect the first region of the scan area 601. In generating the image of the object 125 only those detection signals are used which are generated due to detected interacting particles and/or interacting radiation originating from the first overlap region 603. Thus, detection signals generated due to the interaction of the primary electron beam with the region of the object 125 comprising the first overlap region 603 of the first and second regions are used to generate an image of the object 125. In generating the image of the object 125, those detection signals generated due to the detected interacting particles and/or interacting radiation originating from the second non-overlapping region 604 of the second region of the scan field 602 are not used and/or masked out. Furthermore, the partial regions of the display region 124A of the monitor 124, in which no region of the image of the object 125 is shown, are contrasted in terms of color in such a way that only those partial regions of the display region 124A of the monitor 124, in which the image of the object 125 is shown, are discernible. For example, a partial area of the display area 124A of the monitor 124, in which any area of the image of the object 125 is not shown, is displayed in black.
Fig. 14 shows an even further schematic illustration of a scan area 601 and a scan field 602, on the basis of which further embodiments of the method according to the invention are explained. Fig. 14 is based on fig. 13. First, reference is made to the explanations given above, which also apply here. Fig. 14 shows the monitor 124 implemented as a rectangle. The monitor 124 again has a display area 124A. The image of the object 125 is then intended to be displayed on said display area 124A. In contrast to the embodiment according to fig. 13, the embodiment in fig. 14 provides that the scan field 602 is determined by a scanning device implemented as an electrostatic octupole unit. The second region of the scan field 602 is implemented as an octagon. In this embodiment it is also provided that the first region of the scan area 601 is located completely within the second region of the scan field 602. The first region of the scan area 601 and the second region of the scan field 602 have a first overlap region 603. In the embodiment shown in fig. 14, the common area, i.e. the first overlap area 603, corresponds to the first region of the scanning area 601. A second non-overlapping region 604 of a second region of the scan field 602 is shown in fig. 14 in shaded form. Thus, the shaded area, i.e., the non-overlapping area 604 of the second region of the scan field 602, is an area that does not intersect the first region of the scan area 601. In generating the image of the object 125 only those detection signals are used which are generated due to detected interacting particles and/or interacting radiation originating from the first overlap region 603. Thus, detection signals generated due to the interaction of the primary electron beam with the region of the object 125 comprising the first overlap region 603 of the first and second regions are used to generate an image of the object 125. In generating the image of the object 125, those detection signals generated due to the detected interacting particles and/or interacting radiation originating from the second non-overlapping region 604 of the second region of the scan field 602 are not used and/or masked out. Furthermore, the partial regions of the display region 124A of the monitor 124, in which no region of the image of the object 125 is shown, are contrasted in terms of color in such a way that only those partial regions of the display region 124A of the monitor 124, in which the image of the object 125 is shown, are discernible. For example, a partial area of the display area 124A of the monitor 124, in which any area of the image of the object 125 is not shown, is displayed in black.
Fig. 15 shows an embodiment of the method according to the invention, which is performed by the SEM100 according to fig. 2. In a method step S1C, a particle beam in the form of a primary electron beam is generated by the electron source 101. Furthermore, a further method step S2C relates to determining the maximum scanning area 601 selected as a result of the adjustment of the first objective 107, which area is shown in fig. 7. Also, the maximum scan field generated as a result of the adjustment of the scanning device 115 is determined 602, which is shown in FIG. 7. The maximum scan area 601 selected due to the adjustment of the first objective lens 107 is aligned with the maximum scan field 602, as illustrated in fig. 7. The first region of the scan area 601 is located entirely within the second region of the scan field 602. The first region of the scan area 601 and the second region of the scan field 602 have a first overlap region 603. A second non-overlapping region 604 of a second region of the scan field 602 is shown in fig. 7 in shaded form. Thus, the shaded area, i.e., the non-overlapping area 604 of the second region of the scan field 602, is an area that does not intersect the first region of the scan area 601.
Then, method step S4C involves focusing the primary electron beam onto the first primary electron beam overlap region 603, and method step S5C involves scanning the primary electron beam over the first overlap region 603. Method step S6C then involves detecting the interacting particles, for example in the form of secondary electrons and/or backscattered electrons, by at least one of the following detectors: a first detector 116, a second detector 117, a third detector 121, and a chamber detector 119. Additionally or alternatively, the method involves detecting the interacting radiation in the form of x-rays and/or cathodoluminescent light by radiation detector 500. During detection of the interacting particles and/or interacting radiation, the aforementioned detector generates a detection signal.
Method step S7C then involves generating an image of object 125 using the primary electron beam and/or analyzing object 125. For this purpose only detection signals generated from interacting particles and/or interacting radiation originating from the first overlap region 603 are used. Thus, detection signals generated due to the interaction of the primary electron beam with the area of the object 125 comprising the first overlap area 603 of the first and second regions are used for generating an image and/or for analyzing the object 125. Method step S8C then relates to the image of object 125 and/or the result of the analysis of object 125 on monitor 124 of SEM 100.
Fig. 16 shows a still further embodiment of the method according to the invention, which is performed by the SEM100 according to fig. 2. In a method step S1D, a particle beam in the form of a primary electron beam is generated by the electron source 101. Then, in a method step S2D, the particle beam in the form of a primary electron beam is focused onto the object 125 by means of the first objective lens 107. Furthermore, the scanning device 115 is adjusted in such a way that the first deflection device 800 and the second deflection device 801 supply a voltage with a maximum amplitude or a current with a maximum amplitude, so that a maximum scanning field 602 is obtained.
The maximum scan area 601 selected as a result of the adjustment of the first objective lens 107 is then aligned with the maximum scan field 602, as illustrated in fig. 7. The first region of the scan area 601 is located entirely within the second region of the scan field 602.
The first region of the scan area 601 and the second region of the scan field 602 have a first overlap region 603. In other words, the first region of the scanning area 601 and the second region of the scanning field 602 have a common area, i.e., the first overlap area 603. A second non-overlapping region 604 of a second region of the scan field 602 is shown in fig. 7 in shaded form. Thus, the shaded area, i.e., the non-overlapping area 604 of the second region of the scan field 602, is an area that does not intersect the first region of the scan area 601.
In method step S3D, the primary electron beam is scanned over the entire second area of the scanning field 602. Method step S4D relates to detecting the interacting particles, for example in the form of secondary electrons and/or backscattered electrons, by at least one of the following detectors: a first detector 116, a second detector 117, a third detector 121, and a chamber detector 119. Additionally or alternatively, the method involves detecting the interacting radiation in the form of x-rays and/or cathodoluminescent light by radiation detector 500. During detection of the interacting particles and/or interacting radiation, the aforementioned detector generates a detection signal.
Method step S5D then involves generating a first image of object 125. For this purpose only those detection signals are used which are generated as a result of the detected interacting particles and/or interacting radiation originating from the first overlapping area 603. Thus, detection signals generated due to the interaction of the primary electron beam with the area of the object 125 comprising the first overlap area 603 of the first and second regions are used for generating the first image and/or for analyzing the object 125.
Method step S6D then involves generating a second image of object 125. For this purpose, only those detection signals generated as a result of detected interacting particles and/or interacting radiation originating from the second non-overlapping region 604 of the second region of the scanning field 602 are used.
Method step S7D relates to identifying a first image of the object 125 with a first identifier and/or identifying a second image of the object 125 with a second identifier. Fig. 7 shows a circular separation line 609 assigned to both the first and second images. For example, it is provided that the separation line 609 is arranged along the outer boundary of the overlapping area 603. Additionally or alternatively, there is provided the use of at least one first color as the first identifier. In further embodiments, additionally or alternatively, it is provided to use at least one second separation line (e.g. a circular line) extending along the outer boundary of the non-overlapping area 604 as a second identifier. Additionally or alternatively, an adjustable contrast using at least one second color or a second image is provided as the second identifier. Furthermore, method step S8D involves displaying on monitor 124a first image of object 125 identified with the first identifier and/or a second image of object 125 identified with the second identifier.
An advantage of the method according to the invention is that only those regions of the object 125 that can be imaged and/or analyzed with very significant aberrations are not taken into account or identified in such a way that these regions can be easily recognized by the user when generating the image and/or when performing the analysis of the object 125. By means of the method according to the invention, imaging and/or analysis or consideration is carried out after imaging of those regions of the object 125 which exhibit only small aberrations.
The features of the invention disclosed in the present specification, drawings and claims may be essential to the realization of the invention in its various embodiments, both individually and in any combination. The invention is not limited to the embodiments described. Changes may be made within the scope of the claims and in view of the knowledge of a person skilled in the art.
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List of reference numerals
100 SEM
101 electron source
102 leading out electrode
103 anode
104 bundle guiding tube
105 first condenser lens
106 second condenser lens
107 first objective lens
108 first diaphragm unit
108A first aperture
109 second diaphragm unit
110 pole shoe
111 coil
112 individual electrodes
113 tubular electrode
114 object holder
115 scanning device
116 first detector
116A opposite field grating
117 second detector
118 second aperture
119 chamber detector
120 sample chamber
121 third detector
122 sample stage
123 control unit with processor
124 monitor
124A display area of monitor
125 object
126 database
127 optical signal device
128 acoustic signal apparatus
200 combination device
201 sample chamber
300 ion beam device
301 ion beam generator
Extraction electrode in 302 ion beam device
303 spotlight lens
304 second objective lens
306 adjustable or selectable diaphragm
307 first electrode arrangement
308 second electrode arrangement
400 particle beam device with corrector unit
401 particle beam column
402 electron source
403 leading-out electrode
404 anode
405 first electrostatic lens
406 second electrostatic lens
407 third Electrostatic lens
408 magnetic deflection unit
409 first electrostatic beam deflection unit
409A first multipole unit
409B second multipole unit
410 beam deflection device
411A first magnetic sector
411B second magnetic sector
411C third magnetic sector
411D fourth magnetic sector
411E fifth magnetic sector
411F sixth magnetic sector
411G seventh magnetic sector
413A first mirror electrode
413B second mirror electrode
413C third mirror electrode
414 Electrostatic mirror
415 fourth Electrostatic lens
416 second electrostatic beam deflection unit
416A third multipole cell
416B fourth multipole cell
417 a third electrostatic beam deflection unit
418 fifth electrostatic lens
418A fifth multipole cell
418B sixth multipole unit
419 first analytical detector
420 bundle guiding tube
421 objective lens
422 magnetic lens
423 sixth electrostatic lens
424 sample carrier
425 object
426 sample chamber
427 detecting the beam path
428 second analysis detector
429 scanning device
432 additional magnetic deflecting element
500 radiation detector
601 scanning area
601A scanning the first region of the area
601B scanning a second area of the region
602 field of scan
602A additional fields
603 first overlap region
604 second non-overlapping region of the scan field
604A first region of the scan field
604B scanning the second region of the field
604C third region of the scan field
604D field of the scanning
605 first straight line
606 second straight line
607 third straight line
608 fourth straight line
709 first bundle axis
710 second bundle axis
800 first deflection device
801 second deflection device
802 first deflection amplifier unit
803 second deflection amplifier unit
OA optical axis
OA1 first optical axis
OA2 second optical axis
OA3 third optical axis
Method steps S1-S8
Method step S1A
Method steps S1C to S8C
Method steps S1D to S8D
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Claims (19)
1. A method for operating a particle beam device (100, 200, 400) for imaging and/or analyzing an object (125, 425), wherein the method comprises:
-generating a particle beam comprising charged particles by at least one beam generator (101, 301, 402);
-focusing the particle beam by means of at least one objective lens (107, 304, 421) onto a scanning area (601) of the object (125, 425), wherein the scanning area (601) is implemented as a first region due to an optical embodiment of the objective lens (107, 304, 421);
-scanning the particle beam over a scanning field (602) on the object (125, 425) by means of at least one scanning device (115, 307, 308, 429), wherein, with maximum deflection of the scanning device (115, 307, 308, 429), the scanning field (602) is embodied as a second region, wherein the first region of the scanning region (601) and the second region of the scanning field (602) have a first overlapping region (603), and wherein the second region of the scanning field (602) has a second region (604) which does not overlap the first region of the scanning region (601):
-detecting interacting particles and/or interacting radiation resulting from interaction of the particle beam with the object (125, 425) by at least one detector (116, 117, 119, 121, 419, 428, 500);
-generating a detection signal by the detector (116, 117, 119, 121, 419, 428, 500) due to the detected interacting particles and/or interacting radiation;
-generating an image of the object (125, 425) and/or performing an analysis of the object (125, 425) using the detection signals generated only due to detected interacting particles and/or interacting radiation originating from the first overlap region (603); and
-displaying the image of the object (125, 425) and/or the analysis result of the object (125, 425) on a display device (124, 124A).
2. A method for operating a particle beam device (100, 200, 400) for imaging and/or analyzing an object (125, 425), wherein the method comprises:
-generating a particle beam comprising charged particles by at least one beam generator (101, 301, 402);
-determining a scanning area (601) on the object (125, 425), wherein the scanning area (601) is implemented as a first region due to an optical embodiment of the objective lens (107, 304, 421), and wherein the scanning area (601) can be imaged and/or can be analyzed with the particle beam;
-determining a scan field (602) of the object (125, 425) generated by a scanning device (115, 307, 308, 429), wherein, with a maximum deflection of the scanning device (115, 307, 308, 429), the scan field (602) is implemented as a second region, wherein the first region of the scan region (601) and the second region of the scan field (602) have a first overlap region (603), and wherein the second region of the scan field (602) has a second region (604) which does not overlap with the first region of the scan region (601):
-focusing the particle beam only onto the first overlapping area (603);
-scanning the particle beam only over the first overlapping region (603);
-detecting interacting particles and/or interacting radiation resulting from interaction of the particle beam with the object (125, 425) by at least one detector (116, 117, 119, 121, 419, 428, 500);
-generating a detection signal by the detector (116, 117, 119, 121, 419, 428, 500) due to the detected interacting particles and/or interacting radiation;
-generating an image of the object (125, 425) and/or performing an analysis of the object (125, 425) using the detection signals generated due to detected interacting particles and/or interacting radiation originating from the first overlapping area (603); and
-displaying the image of the object (125, 425) and/or the analysis result of the object (125, 425) on a display device (124, 124A).
3. A method for operating a particle beam device (100, 200, 400) for imaging an object (125, 425), wherein the method comprises:
-generating a particle beam comprising charged particles by at least one beam generator (101, 301, 402);
-focusing the particle beam by means of at least one objective lens (107, 304, 421) onto a scanning area (601) of the object (125, 425), wherein the scanning area (601) is implemented as a first region due to an optical embodiment of the objective lens (107, 304, 421);
-scanning the particle beam over a scanning field (602) of the object (125, 425) by means of at least one scanning device (115, 307, 308, 429), wherein, with maximum deflection of the scanning device (115, 307, 308, 429), the scanning field (602) is embodied as a second region, wherein the first region of the scanning region (601) and the second region of the scanning field (602) have a first overlapping region (603), and wherein the second region of the scanning field (602) has a second region (604) which does not overlap the first region of the scanning region (601):
-detecting interacting particles and/or interacting radiation resulting from interaction of the particle beam with the object (125, 425) by at least one detector (116, 117, 119, 121, 419, 428, 500);
-generating a detection signal by the detector (116, 117, 119, 121, 419, 428, 500) due to the detected interacting particles and/or interacting radiation;
-generating a first image of the object (125, 425) using the detection signals generated due to detected interacting particles and/or interacting radiation originating from the first overlapping area (603);
-generating a second image of the object (125, 425) using the detection signals generated due to detected interacting particles and/or interacting radiation originating from a second non-overlapping region (604) of a second region of the scan field (602);
-identifying a first image of the object (125, 425) with a first identifier and/or identifying a second image with a second identifier; and
-displaying a first image of the object (125, 425) identified with the first identifier and/or a second image identified with the second identifier on a display device (124, 124A).
4. A method according to claim 3, wherein the method comprises at least one of the following steps:
(i) using at least one first separation line as a first identifier;
(ii) using at least one first color as a first identifier;
(iii) using at least one second separation line as a second identifier;
(iv) at least one second color is used as a second identifier.
5. The method according to claim 3, wherein an adjustable contrast of the second image is used as the second identifier.
6. The method according to any of the preceding claims, wherein the first region of the scanning area (601) and the second region of the scanning field (602) are oriented in such a way that the first region of the scanning area (601) is completely located in the second region of the scanning field (602).
7. The method of any one of the preceding claims,
-selecting a first region of the scanning area (601) in such a way that the first region has a first shape, and wherein,
-selecting a second region of the scan field (602) in such a way that the second region of the scan field (602) has a second shape, wherein the first shape is different from the second shape.
8. The method of claim 7, wherein the method comprises at least one of the following features:
-selecting a first region of the scanning area (601) in such a way that the first region is embodied as a circle;
-selecting a second region of the scan field (602) in such a way that the second region is implemented as a polygon.
9. The method according to claim 1, wherein a mask is arranged over the second non-overlapping area (604) of the second region of the scan field (602) in such a way that the detection signals generated with detected interacting particles and/or interacting radiation originating from the second non-overlapping area (604) of the second region of the scan field (602) are not used when generating an image of the object (125, 425) and/or when performing an analysis of the object (125, 425).
10. The method according to claim 9, wherein an electronic mask is used as the mask, wherein the electronic mask is generated by image processing.
11. The method of claim 1, wherein,
-selecting a first region of the scan area (601) and a second region of the scan field (602) in such a way that the first region and the second region have a border area adjoining both the first region of the scan area (601) and a second non-overlapping region (604) of the second region of the scan field (602);
-at least one straight line (605 to 608) is oriented along the boundary region, wherein a first side of the straight line (605 to 608) is directed towards a first region of the scan area (601), and wherein a side of the straight line (605 to 608) is directed towards a second non-overlapping region (604) of a second region of the scan field (602), and wherein,
-not using the detection signals generated with detected interacting particles and/or interacting radiation originating from a second non-overlapping region (604) of a second region of the scan field (602), said region being arranged on a second side of the straight line (605 to 608), when generating an image of the object (125, 425) and/or when analyzing the object (125, 425).
12. Method according to any of the preceding claims, wherein the above method steps are performed during and/or after adjusting the magnification of the particle beam device (100, 200, 400).
13. The method according to any of the preceding claims, wherein the execution of the method is indicated to a user of the particle beam apparatus (100, 200, 400) by at least one signal device (127, 128).
14. The method of claim 1, wherein the image is a first image, wherein the analysis is a first analysis, wherein,
-generating a second image of the object (125, 425) and/or a second analysis of the object (125, 425) with the detection signals generated with detected interacting particles and/or interacting radiation originating from the complete scanning field (602); and
-storing in a storage unit (126) at least one of:
(a) the first image and the second image;
(b) the first analysis and the second analysis.
15. The method according to any of the preceding claims, wherein the scanning field (602) is displaced over the object (125, 425) by the scanning device (115, 307, 308, 429).
16. A computer program product comprising program code which can be loaded into a processor (123) and which, when executed, controls a particle beam device (100, 200, 400) in such a way that a method according to at least one of the preceding claims is performed.
17. A particle beam device (100, 200, 400) for imaging and/or analyzing an object (125, 425), the particle beam device comprising
-at least one beam generator (101, 301, 402) for generating a particle beam comprising charged particles;
-at least one objective lens (107, 304, 421) for focusing the particle beam on the object (125, 425);
-at least one scanning device (115, 429) for scanning the particle beam over the object (125, 425);
-at least one detector (116, 117, 119, 121, 419, 428, 500) for detecting interacting particles and/or interacting radiation resulting from an interaction of the particle beam with the object (125, 425),
-at least one display device (124, 124A) for displaying an image and/or an analysis of the object (125, 425), and the particle beam apparatus comprises
-at least one control unit (123) comprising a processor in which the computer program product according to claim 16 is loaded.
18. The particle beam device (200) of claim 17, wherein the beam generator (101) is implemented as a first beam generator (101) and the particle beam is implemented as a first particle beam comprising first charged particles, wherein the objective lens (107) is implemented as a first objective lens for focusing the first particle beam onto the object (125), and wherein the particle beam device (200) further comprises:
-at least one second beam generator (301) for generating a second particle beam comprising second charged particles; and
-at least one second objective lens (304) for focusing the second particle beam onto the object (125).
19. Particle beam device (100, 200, 400) according to claim 17 or 18, wherein the particle beam device (100, 200, 400) is an electron beam device and/or an ion beam device.
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| DE102020103339.7A DE102020103339A1 (en) | 2020-02-10 | 2020-02-10 | Method for operating a particle beam device, computer program product and particle beam device for carrying out the method |
| DE102020103339.7 | 2020-02-10 |
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