CN113223936B - Preparation method of InP-based nano periodic structure - Google Patents
Preparation method of InP-based nano periodic structure Download PDFInfo
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- CN113223936B CN113223936B CN202110342868.XA CN202110342868A CN113223936B CN 113223936 B CN113223936 B CN 113223936B CN 202110342868 A CN202110342868 A CN 202110342868A CN 113223936 B CN113223936 B CN 113223936B
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- 230000000737 periodic effect Effects 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims description 7
- 238000010894 electron beam technology Methods 0.000 claims abstract description 33
- 239000003292 glue Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 claims abstract description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 claims description 8
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 239000003085 diluting agent Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 238000001020 plasma etching Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 3
- 230000001808 coupling effect Effects 0.000 abstract description 2
- 239000013049 sediment Substances 0.000 abstract description 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920013730 reactive polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0277—Electrolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electron Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A method for preparing an InP-based nano-periodic structure, comprising: coating electron beam glue on a silicon-based InP substrate, putting a wafer coated with the electron beam glue in an oven for pre-baking, designing a mask pattern according to a certain multiple of the width of a theoretical exposure line by using a layout design tool, performing electron beam exposure and development on the substrate by using the mask pattern, etching InP in a mixed atmosphere of methane and hydrogen by using an inductive coupling plasma technology, and cleaning by using a wet method to remove residual glue, thereby obtaining the InP nano periodic structure with a target line width. The invention not only can offset the proximity effect of electrons in the exposure process and improve the electron beam exposure uniformity, but also can reduce the flat accumulation of sediments in the plasma etching reaction and improve the edge morphology of the nano structure by shrinking the mask pattern and reducing the cooperative coupling effect of the two steps of etching and depositing, thereby obtaining the nano periodic structure with the target line width.
Description
Technical Field
The invention relates to the technical field of semiconductor micro-nano processing, in particular to a method for preparing an InP-based nano periodic structure by using electron beam lithography.
Background
The InP semiconductor material has high electro-optic conversion efficiency and electron mobility, and is widely applied in the field of photoelectrons. In InP-based chip fabrication, electron beam lithography is often used to fabricate InP nano-periodic structures. The line width of the nano periodic structure, the edge structure and the cleanliness of the graph have great influence on the performance of the semiconductor device.
When the InP-based nano-periodic structure is prepared by using the electron beam lithography, the width of the electron beam resist exposure strip becomes large due to the proximity effect of the electron beam, and the pattern is distorted. In addition, during the subsequent plasma etching process using the electron beam resist as a mask, the deposition of the reactive polymer on the resist mask may also cause distortion of the etching pattern and deformation of the edge structure.
Therefore, there is a need to develop a simple and effective method for preparing InP-based nanostructures that prevent e-beam exposure pattern distortion and gum mask polymer build-up.
Disclosure of Invention
The invention aims to provide a preparation method of an InP-based nano periodic structure, which aims to solve the problems of glue pattern distortion after electron beam exposure and glue grating polymer deposition after plasma etching, thereby obtaining the InP nano periodic structure with a target occupation ratio.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
The preparation method of the InP-based nano periodic structure comprises the following steps:
step one: coating electron beam glue on a silicon-based InP substrate;
step two: placing the wafer coated with the electron beam glue in an oven for pre-baking;
Step three: reducing a mask pattern by a certain multiple according to the width of the theoretical exposure line by using a layout design tool;
step four: performing electron beam exposure and development on the substrate by using the mask pattern;
step five: etching InP in a mixed atmosphere of methane and hydrogen by utilizing an inductively coupled plasma technology;
step six: and (3) cleaning by a wet method to remove residual glue, and obtaining the InP nano periodic structure with the target line width.
Further, in the first step, the silicon-based InP substrate is an InP epitaxial wafer, and is prepared by adopting a chemical vapor deposition method, and the thickness of InP is 200-600nm.
Further, in the first step, the electron beam glue is ZEP520 or a diluent thereof, the spin conditions are 2000-7000rpm, and the spin time is 30-60s.
Further, the pre-baking condition in the second step is that the temperature of the hot plate is 180 ℃ and the time is 3min.
Further, the theoretical exposed line width in the third step refers to an exposed line width calculated according to a specified duty ratio and a formula [ period× (1-duty ratio) ].
Further, the reduction by a certain multiple in the third step means that the width of the theoretical exposure line is reduced by 0.1-0.3 times.
Further, in the fourth step, the electron beam acceleration voltage used for performing electron beam exposure on the substrate is 100kV, the beam current is 10-20nA, and the exposure dose is 100-400 μC.
Further, in the fourth step, paraxylene is used as a developing solution, the developing time is 60s, isopropanol is used as a fixing solution, and the fixing time is 30-60s.
Further, in the fifth step, the ratio of methane to hydrogen in the mixed gas is 1:4.
Further, in the step six, the wet cleaning means soaking for 2 hours by using dimethylacetamide.
Compared with the prior art, the invention has the beneficial technical effects that:
The method of the invention not only can offset the proximity effect of electrons in the exposure process and improve the uniformity of electron beam exposure, but also can reduce the tiling and stacking of sediments in the plasma etching reaction and improve the edge morphology of the nano-structure by shrinking the mask pattern and reducing the cooperative coupling effect of the two steps of etching and depositing, thereby obtaining the nano-periodic structure with the target line width.
Detailed Description
Example 1
The preparation method of the InP-based nano periodic structure with the period of 100nm and the occupation ratio of 0.5 comprises the following steps:
a. coating electron beam glue on silicon-based InP substrate
The silicon-based InP substrate is an InP epitaxial wafer and is prepared by adopting a chemical vapor deposition method, and the thickness of the InP is 200nm. The electron beam glue is ZEP520 or the dilution thereof, the glue homogenizing condition is 2000rpm, and the glue homogenizing time is 30s.
B. And (3) placing the wafer coated with the electron beam glue in an oven for pre-baking, wherein the pre-baking condition is that a hot plate is at 180 ℃, and the time is 3min.
C. Designing mask pattern by reducing a certain multiple according to theoretical exposure line width by using layout design tool
The layout design tool is L-edition, and the theoretical exposure line width calculated by using a formula [ period X (1-occupation ratio) ] is 50nm according to the period and the occupation ratio. The line width of the designed mask pattern is reduced by 0.1 times, namely 45nm.
D. electron beam exposure and development of a substrate using the above mask pattern
The electron beam acceleration voltage used for electron beam exposure of the substrate was 100kV, the beam current was 10nA, and the exposure dose was 100. Mu.C. The development takes paraxylene as a developing solution, takes 60s of developing time, takes isopropanol as a fixing solution, and takes 30s of fixing time.
E. InP is etched in a mixed atmosphere of methane and hydrogen by utilizing an inductively coupled plasma technology, and the volume ratio of methane to hydrogen is 1:4.
F. And removing residual glue by wet cleaning, namely soaking the InP nano periodic structure with the target line width in dimethylacetamide for 2 hours.
Example 2
The preparation method of the InP-based nano periodic structure with the period of 200nm and the occupation ratio of 0.5 comprises the following steps:
a. coating electron beam glue on silicon-based InP substrate
The silicon-based InP substrate is an InP epitaxial wafer and is prepared by adopting a chemical vapor deposition method, and the thickness of the InP is 600nm. The electron beam glue is ZEP520 or diluent thereof, the spin conditions are 7000rpm, and the spin time is 60s
B. And (3) placing the wafer coated with the electron beam glue in an oven for pre-baking, wherein the pre-baking condition is that a hot plate is at 180 ℃, and the time is 3min.
C. Designing mask pattern by reducing a certain multiple according to theoretical exposure line width by using layout design tool
The layout design tool is KLayout, and the theoretical exposure line width calculated by using a formula of [ period× (1-duty ratio) ] is 100nm according to the period and the duty ratio. The line width of the designed mask pattern is reduced by 0.3 times, namely 70nm.
D. electron beam exposure and development of a substrate using the above mask pattern
The electron beam acceleration voltage used for electron beam exposure of the substrate was 100kV, the beam current was 20nA, and the exposure dose was 400. Mu.C. The development uses p-xylene as the developer, the development time is 60s, isopropanol is used as the fixing liquid, and the fixing time is 60s.
E. InP is etched in a mixed atmosphere of methane and hydrogen by utilizing an inductively coupled plasma technology, and the volume ratio of methane to hydrogen is 1:4.
F. And removing residual glue by wet cleaning, namely soaking the InP nano periodic structure with the target line width in dimethylacetamide for 2 hours.
Claims (7)
1. The preparation method of the InP-based nano periodic structure is characterized by comprising the following steps of:
step one: coating electron beam glue on a silicon-based InP substrate;
step two: placing the wafer coated with the electron beam glue in an oven for pre-baking;
Step three: reducing the width of the theoretical exposure line by 0.1-0.3 times according to the width of the theoretical exposure line by using a layout design tool to design a mask pattern; the theoretical exposure line width is the exposure line width calculated according to a specified duty ratio and a formula [ period X (1-duty ratio) ];
step four: performing electron beam exposure and development on the substrate by using the mask pattern;
Step five: etching InP in a mixed atmosphere of methane and hydrogen with the volume ratio of 1:4 by utilizing an inductively coupled plasma technology;
step six: and (3) cleaning by a wet method to remove residual glue, and obtaining the InP nano periodic structure with the target line width.
2. The method of claim 1, wherein the InP-based InP substrate is an InP epitaxial wafer, and the InP thickness is 200-600nm.
3. The method of claim 1, wherein in the first step, the electron beam glue is ZEP520 or a diluent thereof, the spin conditions are 2000-7000rpm, and the spin time is 30-60s.
4. The method for preparing an InP-based nano-periodic structure according to claim 1, wherein the pre-baking conditions in the second step are hot plate 180 ℃ for 3min.
5. The method of manufacturing an InP-based nano-periodic structure according to claim 1, wherein in the fourth step, the electron beam acceleration voltage used for the electron beam exposure of the substrate is 100kV, the beam current is 10-20nA, and the exposure dose is 100-400 μc.
6. The method for preparing an InP-based nano-periodic structure according to claim 1, wherein in the fourth step, p-xylene is used as the developing solution, the developing time is 60s, isopropanol is used as the fixing solution, and the fixing time is 30-60s.
7. The method for preparing an InP-based nano-periodic structure according to claim 1, wherein in the step six, the wet cleaning means soaking in dimethylacetamide for 2 hours.
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| CN202110342868.XA CN113223936B (en) | 2021-03-30 | 2021-03-30 | Preparation method of InP-based nano periodic structure |
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| CN202110342868.XA CN113223936B (en) | 2021-03-30 | 2021-03-30 | Preparation method of InP-based nano periodic structure |
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