CN113219783A - Optical proximity correction method, related device and mask plate - Google Patents
Optical proximity correction method, related device and mask plate Download PDFInfo
- Publication number
- CN113219783A CN113219783A CN202010071766.4A CN202010071766A CN113219783A CN 113219783 A CN113219783 A CN 113219783A CN 202010071766 A CN202010071766 A CN 202010071766A CN 113219783 A CN113219783 A CN 113219783A
- Authority
- CN
- China
- Prior art keywords
- graph
- auxiliary
- pattern
- main
- initial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012937 correction Methods 0.000 title claims abstract description 78
- 230000003287 optical effect Effects 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000003780 insertion Methods 0.000 claims abstract description 17
- 230000037431 insertion Effects 0.000 claims abstract description 17
- 230000008014 freezing Effects 0.000 claims abstract description 5
- 238000007710 freezing Methods 0.000 claims abstract description 5
- 238000010586 diagram Methods 0.000 claims description 12
- 238000001459 lithography Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 description 11
- 238000004891 communication Methods 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The embodiment of the invention provides an optical proximity correction method, a related device and a mask plate, wherein the method comprises the steps of inserting an initial auxiliary graph according to the setting of a main graph and a preset insertion rule to obtain an initial mask plate graph; searching a problem main pattern in the initial mask pattern, and adding 1 to the searching times of the problem main pattern; determining a deletable initial auxiliary graph and a replacement auxiliary graph of each problem main graph, deleting the deletable initial auxiliary graph, inserting and freezing the replacement auxiliary graph to obtain a replacement mask graph, and obtaining a target mask graph until the searching times reach a preset number or the problem main graph cannot be found in the replacement mask graph, wherein the projection coefficient from the replacement auxiliary graph to the problem main graph is larger than or equal to a projection coefficient threshold value. The embodiment of the invention can improve the reasonability of the auxiliary graph setting so as to meet the requirement of optical proximity correction.
Description
Technical Field
The embodiment of the invention relates to the field of semiconductors, in particular to an optical proximity correction method, a related device and a mask plate.
Background
As semiconductor processing technology continues to evolve, integrated circuit feature sizes continue to decrease. In order to ensure the performance of the semiconductor structure, an auxiliary pattern (SB, also called a sub-resolution auxiliary pattern) is disposed on the mask plate during the processing process to ensure the processing accuracy of the semiconductor structure.
The density of the main pattern can be optimized by inserting some fine auxiliary patterns around the main pattern of the mask plate, so that the pattern contrast of the whole semiconductor structure is improved, and the photoetching process window is improved. However, as the technical nodes become smaller, the specific situation environment of the main graph becomes complicated, and the rule-based (RB) determination rule of the auxiliary graph cannot be exhaustive in various situations, so that the rationality of the inserted auxiliary graph cannot be guaranteed; model-based (MB) auxiliary graphics cannot meet the optical proximity correction requirements at present due to the problems of poor stability, long running time and the like.
Therefore, it is necessary to improve the rationality of the auxiliary pattern arrangement to meet the requirements of optical proximity correction.
Disclosure of Invention
The technical problem to be solved by the embodiment of the invention is to provide an optical proximity correction method, which improves the reasonability of auxiliary graph setting so as to meet the requirement of optical proximity correction.
To solve the above problem, an embodiment of the present invention provides an optical proximity correction method, including:
obtaining a main pattern layout diagram, and inserting an initial auxiliary pattern to obtain an initial mask plate pattern;
searching a problem main pattern in the initial mask pattern, and recording the searching times of the problem main pattern plus 1, wherein the problem main pattern is a main pattern which is associated with each projection coefficient from each initial auxiliary pattern to the main pattern of the same main pattern and is smaller than a projection coefficient threshold value;
determining a deletable initial auxiliary graph and a replacement auxiliary graph of each problem main graph, deleting the deletable initial auxiliary graph, inserting and freezing the replacement auxiliary graph to obtain a replacement mask graph, and obtaining a target mask graph until the searching times reach a preset number or the problem main graph cannot be found in the replacement mask graph, wherein the projection coefficient of the replacement auxiliary graph to the problem main graph is larger than or equal to the projection coefficient threshold value.
Optionally, the step of determining a deletable initial auxiliary graphic and a replacement auxiliary graphic for each of the problem main graphics comprises:
determining one of the initial auxiliary graphs of the problem main graph as a pre-deleted initial auxiliary graph;
the method comprises the steps of pre-deleting the pre-deleted initial auxiliary graph, obtaining a replaceable auxiliary graph of the pre-deleted initial auxiliary graph and each associated main graph associated with the replaceable auxiliary graph, and determining that the pre-deleted initial auxiliary graph is the deletable initial auxiliary graph and the replaceable auxiliary graph corresponding to the deletable initial auxiliary graph is the replaceable auxiliary graph when each associated main graph of the replaceable auxiliary graph is a non-problem main graph, wherein the non-problem main graph is a main graph which is associated with the same main graph and has at least one of projection coefficients of each initial auxiliary graph to the main graph, and the projection coefficients are larger than or equal to the projection coefficient threshold value.
Optionally, the step of determining the deletable initial auxiliary graphic and the replacement auxiliary graphic for each of the problem main graphics further comprises:
and when the associated main graphs of the replaceable auxiliary graphs contain the problem main graph and the initial auxiliary graphs of the problem main graph are not determined to be the pre-deleted initial auxiliary graphs in a traversing manner, replacing the pre-deleted initial auxiliary graphs in the initial auxiliary graphs of the problem main graph, and turning to the step of executing the pre-deleted initial auxiliary graphs.
Optionally, the step of determining the deletable initial auxiliary graphic and the replacement auxiliary graphic for each of the problem main graphics further comprises:
when each associated main graph of the replaceable auxiliary graphs contains a problem main graph and each initial auxiliary graph of the problem main graph is determined to be a pre-deleted initial auxiliary graph in a traversing mode, one of the initial auxiliary graphs is determined to be the deletable initial auxiliary graph, and the replaceable auxiliary graph corresponding to the deletable initial auxiliary graph is determined to be the replaceable auxiliary graph.
Optionally, the step of determining that one of the initial auxiliary graphics is the deletable initial auxiliary graphic includes:
determining that the last initial auxiliary graphic determined as the pre-deleted initial auxiliary graphic is the deletable initial auxiliary graphic, among the initial auxiliary graphics.
Optionally, the step of obtaining an alternative auxiliary graphic to the pre-deleted initial auxiliary graphic includes:
determining the replaceable auxiliary graphic according to the setting of the main graphic and the setting of a non-pre-deleted initial auxiliary graphic, wherein the non-pre-deleted initial auxiliary graphic is each initial auxiliary graphic which is not determined as a pre-deleted initial auxiliary graphic;
setting an adjustment priority level of the problem main graph, and adjusting an insertion rule based on the adjustment priority level;
and pre-inserting the replaceable auxiliary graph according to the insertion rule to obtain the replaceable auxiliary graph of the pre-deleted initial auxiliary graph.
Optionally, the step of determining a pre-deleted initial auxiliary graphic in each initial auxiliary graphic of the problem main graphic comprises:
determining one of the initial auxiliary graphics of the problem main graphic as a pre-deleted initial auxiliary graphic in a predetermined order.
Optionally, the predetermined sequence is a sequence selected from the right side of the question graph clockwise.
Optionally, the step of finding the problem main pattern in the initial mask pattern comprises:
acquiring each main pattern of the initial mask plate pattern and an initial auxiliary pattern associated with each main pattern;
performing the following operations on each main pattern to determine a problem main pattern in the initial mask pattern:
obtaining projection coefficients of each initial auxiliary graph related to the same main graph to the main graph;
and when each projection coefficient of the same main graph is smaller than the projection coefficient threshold value, determining that the main graph is the problem main graph.
Optionally, the step of obtaining respective projection coefficients of respective initial auxiliary graphics associated with the same main graphic to the main graphic comprises:
determining a main figure size of the main figure in the projection extending direction and a projection size of each projection according to the projection of each initial auxiliary figure on the main figure;
and acquiring the projection coefficient of each initial auxiliary graph to the main graph according to the projection size of each projection and the size of the main graph.
Optionally, the predetermined number of times ranges from 3 times to 6 times.
Optionally, the method further comprises:
and when the search times reach a preset number or the problem main graph cannot be found in the replacement mask graph, recording the search times and adding 1, and turning to the step of determining the deletable initial auxiliary graph and the replacement auxiliary graph of each problem main graph.
To solve the above problem, an embodiment of the present invention provides an optical proximity correction device, including:
the initial mask plate graph obtaining unit is suitable for obtaining the main graph layout graph and inserting the initial auxiliary graph to obtain an initial mask plate graph;
the problem main pattern obtaining unit is suitable for searching a problem main pattern in the initial mask pattern and recording the searching times of the problem main pattern plus 1, wherein the problem main pattern is a main pattern which is associated with each projection coefficient of each initial auxiliary pattern of the same main pattern to the main pattern and is smaller than a projection coefficient threshold value;
and a mask pattern obtaining unit, adapted to determine a deletable initial auxiliary pattern and a replacement auxiliary pattern of each of the problem main patterns, delete the deletable initial auxiliary pattern, insert and freeze the replacement auxiliary pattern, obtain a replacement mask pattern, until the search times reach a predetermined number of times or the problem main pattern cannot be found in the replacement mask pattern, and obtain a target mask pattern, wherein a projection coefficient of the replacement auxiliary pattern to the problem main pattern is greater than or equal to the projection coefficient threshold.
In order to solve the above problem, an embodiment of the present invention provides a mask plate, including: and (3) acquiring a target mask plate pattern by using the optical proximity correction method.
In order to solve the above problem, an embodiment of the present invention provides a mask plate, where a target mask plate pattern of the mask plate includes:
a main pattern corresponding to a target pattern of lithography;
auxiliary graphics located between the main graphics;
the number of the problem main graphs in the main graphs is 0, wherein the problem main graphs are main graphs which are associated with the auxiliary graphs of the same main graph and have projection coefficients of the auxiliary graphs to the main graph, and the projection coefficients of the auxiliary graphs are all smaller than a threshold value of the projection coefficients.
To solve the above problem, an embodiment of the present invention provides an apparatus, including at least one memory and at least one processor, where the memory stores one or more computer instructions, where the one or more computer instructions are executed by the processor to implement the optical proximity correction method according to any one of the preceding claims.
To solve the above problem, an embodiment of the present invention provides a storage medium storing one or more computer instructions for implementing the optical proximity correction method according to any one of the preceding claims.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following advantages:
the optical proximity correction method provided by the embodiment of the invention comprises the steps of obtaining an initial mask pattern based on an initial auxiliary pattern inserted regularly during optical proximity correction, obtaining a problem main pattern in the initial mask pattern, adjusting one initial auxiliary pattern in the problem main pattern, namely deleting the deletable initial auxiliary pattern in the initial auxiliary pattern, inserting a replacement auxiliary pattern which is frozen until the projection coefficient of the problem main pattern meets the requirement of a projection coefficient threshold value, changing the problem main pattern into a non-problem main pattern, obtaining a replacement mask pattern until the obtained replacement mask pattern has no problem main pattern, or finding the problem main pattern from the initial mask pattern and the replacement mask pattern for a preset number of times, completing the optical proximity correction, and obtaining a target mask pattern with a small number of problem main patterns, therefore, the target mask plate graph obtained by the optical proximity correction method provided by the embodiment of the invention can ensure that the main graph has an auxiliary graph with a projection coefficient meeting the threshold requirement to a large extent, the reasonability of the setting of the auxiliary graph is improved, the pattern density is further optimized, the pattern contrast is improved, the requirement of optical proximity correction is met, and the photoetching process window is improved.
Drawings
FIG. 1 is a flow chart illustrating a method for optical proximity correction according to an embodiment of the present invention;
FIG. 2 is a partial schematic view of an initial reticle layout for a method of optical proximity correction according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of projection coefficient calculation;
FIG. 4 is a flowchart illustrating steps of determining a removable initial auxiliary pattern and replacing the auxiliary pattern according to the optical proximity correction method provided by an embodiment of the present invention;
FIG. 5 is a schematic illustration of an alternative auxiliary pattern based on the initial reticle pattern of FIG. 2 inserting an alternative auxiliary pattern;
FIG. 6 is a partial schematic view of a replacement reticle pattern based on the insertion of the replacement assist pattern from the initial reticle pattern shown in FIG. 2;
FIG. 7 is a schematic diagram of an optical proximity correction device according to an embodiment of the present invention;
fig. 8 is a partial structural schematic view of a mask plate provided in the embodiment of the present invention;
fig. 9 is a hardware configuration diagram of an apparatus according to an embodiment of the present invention.
Detailed Description
As is known from the background art, when optical proximity correction is performed, it is difficult to achieve exhaustion of a specific situation environment of a main pattern due to the influence of constantly decreasing technical nodes, and thus it is difficult to ensure rationality of an inserted auxiliary pattern.
In order to solve the problem, an embodiment of the present invention provides an optical proximity correction method, including: obtaining a main pattern layout diagram, and inserting an initial auxiliary pattern to obtain an initial mask plate pattern; searching a problem main pattern in the initial mask pattern, and recording the searching times of the problem main pattern plus 1, wherein the problem main pattern is a main pattern which is associated with each projection coefficient from each initial auxiliary pattern to the main pattern of the same main pattern and is smaller than a projection coefficient threshold value; determining a deletable initial auxiliary graph and a replacement auxiliary graph of each problem main graph, deleting the deletable initial auxiliary graph, inserting and freezing the replacement auxiliary graph to obtain a replacement mask graph, and obtaining a target mask graph until the searching times reach a preset number or the problem main graph cannot be found in the replacement mask graph, wherein the projection coefficient of the replacement auxiliary graph to the problem main graph is larger than or equal to the projection coefficient threshold value.
The optical proximity correction method provided by the embodiment of the invention comprises the steps of obtaining an initial mask pattern based on an initial auxiliary pattern inserted regularly during optical proximity correction, obtaining a problem main pattern in the initial mask pattern, adjusting one initial auxiliary pattern in the problem main pattern, namely deleting the deletable initial auxiliary pattern in the initial auxiliary pattern, inserting a replacement auxiliary pattern which is frozen until the projection coefficient of the problem main pattern meets the requirement of a projection coefficient threshold value, changing the problem main pattern into a non-problem main pattern, obtaining a replacement mask pattern until the obtained replacement mask pattern has no problem main pattern, or finding the problem main pattern from the initial mask pattern and the replacement mask pattern for a preset number of times, completing the optical proximity correction, and obtaining a target mask pattern with the least number of problem main patterns, therefore, the target mask plate graph obtained by the optical proximity correction method provided by the embodiment of the invention can ensure that each main graph has at least one auxiliary graph with a projection coefficient meeting the threshold requirement to the maximum extent, the reasonability of the setting of the auxiliary graphs is improved, the pattern density is further optimized, the pattern contrast is improved, the requirement of optical proximity correction is met, and the photoetching process window is improved.
In order to make the aforementioned objects, features and advantages of the embodiments of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As an alternative implementation, please refer to fig. 1, wherein fig. 1 illustrates a flowchart of an optical proximity correction method according to an embodiment of the present invention.
As shown in fig. 1, the process may include:
step S10: and obtaining a main pattern layout diagram, and inserting the initial auxiliary pattern to obtain an initial mask plate pattern.
It is understood that the main pattern layout includes information such as the size of the main pattern itself and the spacing between adjacent main patterns, and the arrangement of the main patterns can be obtained based on the obtained main pattern layout requiring optical proximity correction.
When the initial auxiliary graphic is inserted, the insertion can be performed according to a predetermined insertion rule, which is a rule of information such as priority order of the main graphic in different cases, and which is set in advance according to the situation environment of the main graphic.
In one embodiment, the offset and width of the optimal auxiliary pattern of each main pattern in the main pattern layout can be obtained based on the setting of the main patterns by minimizing the physical verification band, and then the obtained auxiliary pattern is inserted between the main patterns as the initial auxiliary pattern according to the insertion rule to obtain the initial mask pattern.
Specifically, the resulting initial mask plate may have an arrangement as shown in fig. 2.
Step S11: and searching a problem main pattern in the initial mask pattern, and recording the searching times of the problem main pattern plus 1, wherein the problem main pattern is a main pattern which is associated with each projection coefficient of each initial auxiliary pattern to the main pattern of the same main pattern and is smaller than a projection coefficient threshold value.
After the initial mask pattern is obtained, it is necessary to determine whether the setting of the initial auxiliary pattern in the obtained initial mask pattern is reasonable, and for this reason, the optical proximity correction method provided by the embodiment of the present invention is implemented by further searching for a main pattern (i.e., a problem main pattern) in the initial mask pattern, where the inserted initial auxiliary pattern cannot meet the target requirement.
The insertion of the auxiliary pattern is to improve the density of the optimized main pattern, improve the pattern contrast and improve the photolithography process window, and the above information can be measured by the projection coefficient between the auxiliary pattern and the main pattern, so the problem main pattern can also be determined by the projection coefficient, specifically, the problem main pattern is the main pattern associated with each projection coefficient from each initial auxiliary pattern to the main pattern of the same main pattern, which is smaller than the projection coefficient threshold.
Referring to fig. 2, fig. 2 is a partial schematic view of an initial mask pattern of the optical proximity correction method according to an embodiment of the present invention, and as shown in the diagram, a main pattern 1 includes 4 initial auxiliary patterns 111.
It will be appreciated that to obtain the problem master pattern, all that is first done is to obtain each master pattern in the initial reticle pattern and each initial auxiliary pattern associated with each master pattern.
Then, for each main graph, the projection coefficient of each initial auxiliary graph associated with the main graph to the main graph is obtained.
Referring to fig. 3, fig. 3 is a schematic diagram of projection coefficient calculation.
Specifically, in order to obtain the projection coefficient, the projection of the initial auxiliary pattern onto the main pattern may be determined first, and it is understood that the projection direction may be different based on the relative position between the initial auxiliary pattern and the main pattern, that is, the initial auxiliary pattern may be projected in the direction of arrow a or in the direction of arrow B, and referring to fig. 3, the projection direction of the initial auxiliary pattern located on the left and right sides of the main pattern is the direction indicated by arrow a, and the projection direction of the initial auxiliary pattern located on the upper and lower sides of the main pattern is the direction indicated by arrow B.
The size of the main pattern in the direction of extension of the projection and the size of the projection are then determined. As shown in fig. 3, the initial auxiliary pattern is located at the right side of the main pattern, resulting in a main pattern size D and a projected size D.
And finally, acquiring a projection coefficient from the specific initial auxiliary graph to the main graph based on the projection size and the size of the main graph, namely acquiring the ratio of the projection size to the size of the main graph.
When the calculation of all the projection coefficients is completed, the projection coefficients of the initial auxiliary graphs of one main graph to the main graph can be obtained.
And then comparing each projection coefficient with a projection coefficient threshold value to determine whether each projection coefficient is smaller than the projection coefficient threshold value, and if so, determining that the main graph is the problem main graph.
It is understood that the projection coefficient threshold is predetermined and varies with lithography compatibility of the technology node of the semiconductor process, and may be obtained experimentally.
With continued reference to fig. 2, it can be seen that the projection size of each of the 4 initial auxiliary patterns 111 associated with the main pattern 1 in the projection direction thereof is small, so that the obtained projection coefficient is small, and therefore the main pattern 1 is the problem main pattern.
In order to ensure the successful completion of the optical proximity correction method provided by the embodiment of the present invention, the number of cycles is also recorded, and 1 is added to the number of searches of the problem main graph.
Of course, it can be understood that, when performing optical proximity correction, through one search of the problem main pattern, all problem main patterns of the initial mask pattern need to be found, and there may be a plurality of problem main patterns obtained based on the specific situation of the initial mask pattern.
Step S12: determining a deletable initial auxiliary graphic and a replacement auxiliary graphic for each of the problem main graphics.
After the problem main graph is obtained, the problem main graph needs to be changed into a non-problem main graph, which needs to be realized by adjusting one of the initial auxiliary main graphs associated with the problem main graph, so that one of the initial auxiliary graphs in the problem main graph, which can be deleted, needs to be further determined, namely the initial auxiliary graph can be deleted, and the replacement auxiliary graph, which can be used for replacement after the deleted initial auxiliary graph is deleted, needs to be further determined.
Of course, the projection coefficient of the replacement auxiliary graphic to the problem main graphic is greater than or equal to the projection coefficient threshold.
Referring to fig. 4 and 5, fig. 4 is a flowchart illustrating steps of determining an erasable initial auxiliary pattern and a replacing auxiliary pattern according to an optical proximity correction method provided by an embodiment of the present invention; fig. 5 is a partial schematic view of a replacement mask pattern based on the insertion of the replacement auxiliary pattern into the initial mask pattern shown in fig. 2.
In order to determine whether the initial auxiliary graphic and the replacement auxiliary graphic can be deleted, in one embodiment, the following steps may be included:
step S120: determining one of the initial auxiliary graphs of the problem main graph as a pre-deleted initial auxiliary graph.
One of the initial auxiliary patterns of the problem main pattern is arbitrarily determined as a pre-deleted initial auxiliary pattern.
Step S121: the pre-deleted initial auxiliary graphic is pre-deleted, and the replaceable auxiliary graphic of the pre-deleted initial auxiliary graphic and each associated main graphic associated with the replaceable auxiliary graphic are obtained.
Then, the pre-deleted initial auxiliary image is deleted, and the replaceable auxiliary image corresponding to the pre-deleted initial auxiliary image is further regenerated.
It will be appreciated that, to ensure that the replaceable auxiliary graphic pre-deletes the initial auxiliary graphic differently, the acquisition condition of the replaceable auxiliary graphic should be different from the acquisition condition of the initial auxiliary graphic, in one embodiment, the replaceable auxiliary graphic may be determined first according to the setting of the main graphic and the setting of the non-pre-deleted initial auxiliary graphic, wherein the non-pre-deleted initial auxiliary graphic is each of the initial auxiliary graphics that are not determined as pre-deleted initial auxiliary graphics, then the adjustment priority level of the problem main graphic is set based on the current specific situation, then the insertion rule is adjusted based on the adjustment priority level, and finally the replaceable auxiliary graphic is pre-inserted according to the insertion rule to obtain the replaceable auxiliary graphic of the pre-deleted initial auxiliary graphic.
Of course, the setting rule for adjusting the priority level may be determined in advance based on the specific situation, so that the adjustment priority level is set by a generation method, or the adjustment priority level may be set by an external input method.
Having obtained and pre-inserted the replaceable auxiliary graphic, the associated primary graphic associated with the replaceable auxiliary graphic can be further retrieved.
It will be appreciated that the associated primary graphic refers to the primary graphic onto which the alternative secondary graphics can be projected.
Step S122: judging whether all the associated main graphs of the replaceable auxiliary graphs are non-problem main graphs, if so, executing a step S123; if not, go to step S124.
Since there may be more than one primary graphic associated with each initial auxiliary graphic, replacing the pre-deleted initial auxiliary graphic with a replaceable auxiliary graphic may result in the primary graphic associated with the pre-deleted initial auxiliary graphic being converted from a non-problem primary graphic to a problem primary graphic, and for this reason, it is necessary to determine whether each associated primary graphic with a replaceable auxiliary graphic is a non-problem primary graphic to avoid to the greatest extent that the non-problem primary graphic is converted to a problem primary graphic due to the insertion of the replaceable auxiliary graphic.
It is easy to understand that the non-problem main graph is a main graph which is associated with at least one of the projection coefficients of each initial auxiliary graph of the same main graph to the main graph and is greater than or equal to the projection coefficient threshold value.
When each associated main graphic of the replaceable auxiliary graphics is a non-problem main graphic, that is, even if the pre-deleted initial auxiliary graphic is replaced with a replaceable auxiliary graphic, the other associated main graphics with the replaceable auxiliary graphic are not changed into problem main graphics, indicating that the replacement is possible, so as to execute step S123, determining that the pre-deleted initial auxiliary graphic is the deletable initial auxiliary graphic, and the replaceable auxiliary graphic corresponding to the deletable initial auxiliary graphic is the replacement auxiliary graphic; otherwise, step S124 is executed to determine whether each initial auxiliary graph of the problem main graph is a pre-deleted initial auxiliary graph.
Step S123: and determining the pre-deleted initial auxiliary graph as the deletable initial auxiliary graph, wherein the replaceable auxiliary graph corresponding to the deletable initial auxiliary graph is the replacement auxiliary graph.
Step S124: whether each initial auxiliary graph of the problem main graph is determined to be a pre-deleted initial auxiliary graph in a traversing mode or not is determined, and if yes, the step S126 is executed; if not, go to step S125.
If the replacement of the pre-deleted initial auxiliary graphic with the replaceable auxiliary graphic results in the main graphic associated with the other replaceable auxiliary graphic becoming the problem main graphic, temporarily not determining the pre-deleted initial auxiliary graphic as the deletable initial auxiliary graphic, or determining the replaceable auxiliary graphic corresponding to the deletable initial auxiliary graphic as the replacement auxiliary graphic, but further seeing whether each of the initial auxiliary graphics of the problem main graphic has been tried as a pre-deleted initial auxiliary graphic, respectively, and performing an analysis of whether the replacement can be performed, if so, performing step S126, determining one of each of the initial auxiliary graphics as the deletable initial auxiliary graphic, determining the replaceable auxiliary graphic corresponding to the deletable initial auxiliary graphic as the replacement auxiliary graphic, otherwise, replacing the pre-deleted initial auxiliary graph in each initial auxiliary graph of the problem main graph.
Step S125: replacing the pre-deleted initial auxiliary graphics in each initial auxiliary graphics of the problem main graphics.
If the traversal of each initial auxiliary graph is not completed, replacing another initial auxiliary graph of the problem main graph to pre-delete the initial auxiliary graph, and proceeding to step S121, and then performing a new round of acquisition and judgment of the replaceable auxiliary graph.
Step S126: and determining one of the initial auxiliary graphs as the deletable initial auxiliary graph, and determining the replaceable auxiliary graph corresponding to the deletable initial auxiliary graph as the replacement auxiliary graph.
If the traversal has been completed, any of the initial auxiliary graphs may be determined to be the deletable initial auxiliary graph, and the replaceable auxiliary graph corresponding to the deletable initial auxiliary graph may be determined to be the replacement auxiliary graph.
Referring to fig. 5 and 6 in conjunction with fig. 2, fig. 5 is a schematic diagram of an alternative auxiliary pattern inserted into the alternative auxiliary pattern based on the initial mask pattern shown in fig. 2; fig. 6 is a partial schematic view of a replacement mask pattern based on the insertion of the replacement auxiliary pattern into the initial mask pattern shown in fig. 2.
Firstly, the initial auxiliary graph 111 positioned at the right side of the main graph 1 (the main graph 1 is a problem main graph) shown in fig. 2 is determined as a pre-deleted initial auxiliary graph, and is processed to obtain an alternative auxiliary graph 112 (shown in fig. 5) of the pre-deleted initial auxiliary graph, as can be seen from fig. 5, the associated main graphs associated with the alternative auxiliary graphs 112 comprise the main graph 1, the second main graph 2 and the third main graph 3, and it is determined that the second main graph 2 is transformed into the problem main graph from the non-problem main graph, then a step S124 needs to be further executed, and it is determined that each initial auxiliary graph of the problem main graph is determined to be a pre-deleted initial auxiliary graph without traversing, and therefore each initial auxiliary graph needs to be replaced and determined to be a pre-deleted initial auxiliary graph, as shown in the figure, the initial auxiliary graph 111 positioned below the main graph 1 can be replaced, after the processing, the replaceable auxiliary graphic 113 (shown in fig. 6) with the pre-deleted initial auxiliary graphic is obtained, as can be seen from fig. 6, the associated main graphics associated with the replaceable auxiliary graphic 113 include the main graphic 1, the third main graphic 3 and the fourth main graphic 4, and it is determined that the associated main graphics associated with the replaceable auxiliary graphic 113 are all non-problem main graphics, so that the initial auxiliary graphic 111 located below the main graphic 1 is determined to be the deletable initial auxiliary graphic, and the replaceable auxiliary graphic 113 is determined to be the replacement auxiliary graphic.
Of course, if no pre-deleted initial auxiliary graph satisfying the requirement can be found after the traversal, any one of the initial auxiliary graphs may be determined as the deletable initial auxiliary graph, and the replaceable auxiliary graph corresponding to the deletable initial auxiliary graph may be determined as the replacement auxiliary graph.
Of course, in an embodiment, in order to avoid re-acquiring the replaceable auxiliary graphic, the initial auxiliary graphic, which is determined as the pre-deleted initial auxiliary graphic last in the initial auxiliary graphics, may be determined as the deletable initial auxiliary graphic.
It is to be appreciated that, in order to facilitate understanding of which of the initial auxiliary patterns of the problem main pattern have been determined as deletable initial auxiliary patterns, avoiding missing or repeated determinations, one of the initial auxiliary patterns of the problem main pattern may be determined as a pre-deletion initial auxiliary pattern in a predetermined order.
Of course, the predetermined sequence may be set as required, and is not limited herein, and in a specific embodiment, the predetermined sequence may be set as a sequence of selecting and turning clockwise from the right side of the problem graph; in other embodiments, the predetermined order may be in other orders.
Therefore, the optical proximity correction method provided by the embodiment of the invention can reduce the increase of the problem main graph caused by the determination of the replacement auxiliary graph to the maximum extent when determining that the initial auxiliary graph and the replacement auxiliary graph can be deleted, and ensure the reasonability of the setting of the replacement auxiliary graph.
Step S13: and deleting the deletable initial auxiliary pattern, and inserting and freezing the replacement auxiliary pattern to obtain a replacement mask pattern.
And after determining that the initial auxiliary graph and the replacement auxiliary graph can be deleted, determining that the initial auxiliary graph can be deleted, and inserting the replacement auxiliary graph to obtain a replacement mask graph.
However, in order to avoid that the newly inserted replacement auxiliary graphic is deleted and replaced as a deletable initial auxiliary graphic during the next round of the search problem main graphic and the corresponding subsequent cycle, the replacement auxiliary graphic needs to be frozen so that it cannot be deleted.
Step S14: and judging whether the searching times reach the preset times or whether the problem main pattern cannot be found in the replacement mask pattern, if so, executing step S16, and if not, executing step S15.
After the acquisition of the replacement mask pattern of the current cycle is completed, whether the optical proximity correction method provided by the embodiment of the invention is completed or not can be determined by judging whether the search frequency reaches the preset frequency or whether the problem main pattern cannot be found in the replacement mask pattern, if one of the search frequency and the problem main pattern is satisfied, the step S16 is executed, the target mask pattern can be obtained, otherwise, the step S15 is executed, and the search frequency is added by 1.
It is understood that, in one embodiment, the determining whether the number of searches reaches the predetermined number or whether the problem main pattern cannot be found in the replacement mask pattern may include determining whether the number of searches reaches the predetermined number, if so, performing step S16, and if not, performing a determination whether the problem main pattern cannot be found in the replacement mask pattern, and if not, performing a search for the problem main pattern of the replacement mask pattern, and if so, performing step S15, and if not, proving that the problem main pattern does not exist in the replacement mask pattern, and performing step S16.
In another specific embodiment, determining whether the number of searches reaches a predetermined number or whether the problem main pattern cannot be found in the replacement mask pattern may further include determining whether the problem main pattern cannot be found in the replacement mask pattern, determining whether the problem main pattern cannot be found in the replacement mask pattern by searching for the problem main pattern of the replacement mask pattern, and if the problem main pattern cannot be found, performing step S16; if the number of times of searching is found, judging whether the number of times of searching reaches the preset number of times, if so, executing step S16; when not reached, step S15 is executed.
It is to be understood that the predetermined number of times may be set as needed, and the predetermined number of times is not preferably too small in order to minimize the problem main pattern, and the predetermined number of times may be set to 3 to 6 times, for example, 4 times, in order to avoid wasting resources and prolonging time due to too many cycles when further adjustment cannot be performed to change the problem main pattern into a non-problem main pattern, so that the adjustment effect and the adjustment time can be satisfied at the same time.
By means of the method, on one hand, the situation that optical proximity correction falls into infinite loop when a problem main graph cannot be completely eliminated can be avoided, loop completion can be guaranteed in time, on the other hand, optical proximity correction can be completed in time when the problem main graph is completely eliminated, and resources are saved.
Step S15: and recording the number of times of searching and adding 1.
If the number of the search times reaches the preset number, the number of the search times is added with 1 every time the problem main graph is searched, so as to ensure the realization of the judgment whether the number of the search times reaches the preset number.
Step S16: and obtaining a target mask plate pattern.
It can be seen that, in the optical proximity correction method provided in the embodiment of the present invention, when performing optical proximity correction, an initial mask blank pattern is obtained based on an initial auxiliary pattern inserted regularly, and a problem main pattern in the initial mask blank pattern is obtained, and then one of the problem main patterns is adjusted, that is, the initial auxiliary pattern which can be deleted in the initial auxiliary pattern is deleted, a replacement auxiliary pattern which is inserted and frozen until a projection coefficient of the problem main pattern meets a requirement of a projection coefficient threshold is inserted, so that the problem main pattern is changed into a non-problem main pattern, and a replacement mask blank pattern is obtained until the obtained replacement mask blank pattern has no problem main pattern, or the number of times of searching for the problem main pattern from the initial mask blank pattern and the replacement mask blank pattern reaches a predetermined number of times, optical proximity correction is completed, and a target mask blank pattern with a small number of problem main patterns is obtained, therefore, the target mask plate graph obtained by the optical proximity correction method provided by the embodiment of the invention can ensure that the main graph has an auxiliary graph with a projection coefficient meeting the threshold requirement to a large extent, the reasonability of the setting of the auxiliary graph is improved, the pattern density is further optimized, the pattern contrast is improved, the requirement of optical proximity correction is met, and the photoetching process window is improved.
While various embodiments of the present invention have been described above, various alternatives described in the various embodiments can be combined and cross-referenced without conflict to extend the variety of possible embodiments that can be considered disclosed and disclosed in connection with the embodiments of the present invention.
The optical proximity correction device provided by the embodiment of the invention is described below, and the optical proximity correction device described below can be regarded as a functional module which is required to be arranged for realizing the optical proximity correction method provided by the embodiment of the invention. The contents of the devices described below may be referred to in correspondence with the contents of the methods described above.
In an alternative implementation, fig. 7 shows an alternative block diagram of an optical proximity correction apparatus provided by an embodiment of the present invention, and as shown in fig. 7, the optical proximity correction apparatus may include:
an initial mask pattern obtaining unit 100 adapted to obtain a main pattern layout pattern, and insert an initial auxiliary pattern to obtain an initial mask pattern;
a problem main pattern obtaining unit 110, adapted to search a problem main pattern in the initial mask pattern, and add 1 to the search frequency of the problem main pattern, where the problem main pattern is a main pattern in which projection coefficients from each initial auxiliary pattern associated with the same main pattern to the main pattern are all smaller than a projection coefficient threshold;
a mask pattern obtaining unit 120, adapted to determine a deletable initial auxiliary pattern and a replacement auxiliary pattern of each of the problem main patterns, delete the deletable initial auxiliary pattern, insert and freeze the replacement auxiliary pattern, obtain a replacement mask pattern, until the number of search times reaches a predetermined number of times or the problem main pattern cannot be found in the replacement mask pattern, obtain a target mask pattern, where a projection coefficient of the replacement auxiliary pattern to the problem main pattern is greater than or equal to the projection coefficient threshold.
Optionally, the mask pattern obtaining unit 120, adapted to determine the deletable initial auxiliary pattern and the replacement auxiliary pattern of each of the problem main patterns, includes:
determining one of the initial auxiliary graphs of the problem main graph as a pre-deleted initial auxiliary graph;
the method comprises the steps of pre-deleting the pre-deleted initial auxiliary graph, obtaining a replaceable auxiliary graph of the pre-deleted initial auxiliary graph and each associated main graph associated with the replaceable auxiliary graph, and determining that the pre-deleted initial auxiliary graph is the deletable initial auxiliary graph and the replaceable auxiliary graph corresponding to the deletable initial auxiliary graph is the replaceable auxiliary graph when each associated main graph of the replaceable auxiliary graph is a non-problem main graph, wherein the non-problem main graph is a main graph which is associated with the same main graph and has at least one of projection coefficients of each initial auxiliary graph to the main graph, and the projection coefficients are larger than or equal to the projection coefficient threshold value.
Optionally, the mask pattern obtaining unit 120, adapted to determine the deletable initial auxiliary pattern and the replacement auxiliary pattern of each of the problem main patterns, further includes:
and when the associated main graphs of the replaceable auxiliary graphs contain the problem main graph and the initial auxiliary graphs of the problem main graph are not determined to be the pre-deleted initial auxiliary graphs in a traversing manner, replacing the pre-deleted initial auxiliary graphs in the initial auxiliary graphs of the problem main graph, and turning to the step of executing the pre-deleted initial auxiliary graphs.
Optionally, the mask pattern obtaining unit 120, adapted to determine the deletable initial auxiliary pattern and the replacement auxiliary pattern of each of the problem main patterns, further includes:
when each associated main graph of the replaceable auxiliary graphs contains a problem main graph and each initial auxiliary graph of the problem main graph is determined to be a pre-deleted initial auxiliary graph in a traversing mode, one of the initial auxiliary graphs is determined to be the deletable initial auxiliary graph, and the replaceable auxiliary graph corresponding to the deletable initial auxiliary graph is determined to be the replaceable auxiliary graph.
Optionally, the mask pattern obtaining unit 120 is adapted to determine that one of the initial auxiliary patterns is the deletable initial auxiliary pattern, and includes:
determining that the last initial auxiliary graphic determined as the pre-deleted initial auxiliary graphic is the deletable initial auxiliary graphic, among the initial auxiliary graphics.
Optionally, the mask pattern obtaining unit 120 is adapted to obtain the replaceable auxiliary pattern of the pre-deleted initial auxiliary pattern, and includes:
determining the replaceable auxiliary graphic according to the setting of the main graphic and the setting of a non-pre-deleted initial auxiliary graphic, wherein the non-pre-deleted initial auxiliary graphic is each initial auxiliary graphic which is not determined as a pre-deleted initial auxiliary graphic;
setting an adjustment priority level of the problem main graph, and adjusting an insertion rule based on the adjustment priority level;
and pre-inserting the replaceable auxiliary graph according to the insertion rule to obtain the replaceable auxiliary graph of the pre-deleted initial auxiliary graph.
Optionally, the mask pattern obtaining unit 120 is adapted to determine a pre-deleted initial auxiliary pattern of each of the initial auxiliary patterns of the problem main pattern, and includes:
determining one of the initial auxiliary graphics of the problem main graphic as a pre-deleted initial auxiliary graphic in a predetermined order.
Specifically, the predetermined order may be an order of selecting clockwise from the right side of the question figure.
Optionally, the problem main pattern obtaining unit 110, adapted to find the problem main pattern in the initial reticle pattern, includes:
acquiring each main pattern of the initial mask plate pattern and an initial auxiliary pattern associated with each main pattern;
performing the following operations on each main pattern to determine a problem main pattern in the initial mask pattern:
obtaining projection coefficients of each initial auxiliary graph related to the same main graph to the main graph;
and when each projection coefficient of the same main graph is smaller than the projection coefficient threshold value, determining that the main graph is the problem main graph.
Optionally, the problem main graph obtaining unit 110, adapted to obtain each projection coefficient of each initial auxiliary graph associated with the same main graph to the main graph, includes:
determining a main figure size of the main figure in the projection extending direction and a projection size of each projection according to the projection of each initial auxiliary figure on the main figure;
and acquiring the projection coefficient of each initial auxiliary graph to the main graph according to the projection size of each projection and the size of the main graph.
Specifically, the predetermined number of times may range from 3 times to 6 times.
Optionally, the mask pattern obtaining unit 120 is further adapted to add 1 to the number of search times when the number of search times reaches a predetermined number of times or the problem main pattern cannot be found in the replacement mask pattern.
In addition to the optical proximity correction device, in order to solve the foregoing problems, an embodiment of the invention further provides a mask blank, please refer to fig. 8, and fig. 8 is a schematic partial structure diagram of the mask blank provided in the embodiment of the invention.
As shown in the figure, a mask plate provided in an embodiment of the present invention includes: a target reticle pattern 20 acquired using any of the optical proximity correction methods described previously.
The mask plate provided by the embodiment of the invention comprises the target mask plate patterns 20 with a small number of problem main patterns, can ensure that all the main patterns have at least one auxiliary pattern with a projection coefficient meeting the threshold requirement to a large extent, has better pattern density and pattern contrast, meets the requirement of optical proximity correction, and further improves the photoetching process window.
With continued reference to fig. 8, in an embodiment of the present invention, a target mask pattern 20 of a mask provided in the embodiment of the present invention includes:
a main pattern 201 corresponding to a target pattern for lithography;
the number of problem main graphs in the main graph 201 is 0, wherein the problem main graphs are main graphs which are associated with the same main graph and have projection coefficients of the auxiliary graphs to the main graph, and the projection coefficients are all smaller than a projection coefficient threshold value.
It can be understood that the projection coefficient is the ratio of the projection size of the projection of the auxiliary graph on the main graph to the size of the main graph in the projection extending direction; the projection coefficient threshold may be determined based on lithographic compatibility of the semiconductor technology node
The mask plate provided by the embodiment of the invention comprises the target mask plate pattern 20 without the problem main pattern, can ensure that at least one auxiliary pattern with a projection coefficient meeting the threshold requirement can be arranged on the main pattern to a large extent, has better pattern density and pattern contrast, meets the requirement of optical proximity correction, and further improves the photoetching process window.
The embodiment of the present invention further provides an apparatus, which can implement the optical proximity correction method provided by the embodiment of the present invention by loading the above optical proximity correction method in the form of a program. An optional hardware structure of the terminal device provided in the embodiment of the present invention may be as shown in fig. 9, and includes: at least one processor 01, at least one communication interface 02, at least one memory 03 and at least one communication bus 04;
in the embodiment of the present invention, the number of the processor 01, the communication interface 02, the memory 03 and the communication bus 04 is at least one, and the processor 01, the communication interface 02 and the memory 03 complete mutual communication through the communication bus 04;
alternatively, the communication interface 02 may be an interface of a communication module for performing network communication, such as an interface of a GSM module;
The memory 03 may comprise a high-speed RAM memory and may further comprise a non-volatile memory, such as at least one disk memory.
The memory 03 stores one or more computer instructions, which are executed by the processor 01 to implement the access control method provided by the embodiment of the present invention.
It should be noted that the above terminal device may further include other devices (not shown) that may not be necessary for the disclosure of the embodiment of the present invention; these other components may not be necessary to understand the disclosure of embodiments of the present invention, which are not individually described herein.
Embodiments of the present invention also provide a storage medium storing one or more computer instructions for implementing the optical proximity correction method provided by the embodiments of the present invention.
The optical proximity correction method provided by the embodiment of the invention comprises the steps of obtaining an initial mask pattern based on an initial auxiliary pattern inserted regularly during optical proximity correction, obtaining a problem main pattern in the initial mask pattern, adjusting one initial auxiliary pattern in the problem main pattern, namely deleting the deletable initial auxiliary pattern in the initial auxiliary pattern, inserting a replacement auxiliary pattern which is frozen until the projection coefficient of the problem main pattern meets the requirement of a projection coefficient threshold value, changing the problem main pattern into a non-problem main pattern, obtaining a replacement mask pattern until the obtained replacement mask pattern has no problem main pattern, or finding the problem main pattern from the initial mask pattern and the replacement mask pattern for a preset number of times, completing the optical proximity correction, and obtaining a target mask pattern with a small number of problem main patterns, therefore, the target mask plate graph obtained by the optical proximity correction method provided by the embodiment of the invention can ensure that the main graph has an auxiliary graph with a projection coefficient meeting the threshold requirement to a large extent, the reasonability of the setting of the auxiliary graph is improved, the pattern density is further optimized, the pattern contrast is improved, the requirement of optical proximity correction is met, and the photoetching process window is improved.
The embodiments of the present invention described above are combinations of elements and features of the present invention. Unless otherwise mentioned, the elements or features may be considered optional. Each element or feature may be practiced without being combined with other elements or features. In addition, the embodiments of the present invention may be configured by combining some elements and/or features. The order of operations described in the embodiments of the present invention may be rearranged. Some configurations of any embodiment may be included in another embodiment, and may be replaced with corresponding configurations of the other embodiment. It is obvious to those skilled in the art that claims that are not explicitly cited in each other in the appended claims may be combined into an embodiment of the present invention or may be included as new claims in a modification after the filing of the present application.
Embodiments of the invention may be implemented by various means, such as hardware, firmware, software, or a combination thereof. In a hardware configuration, the method according to an exemplary embodiment of the present invention may be implemented by one or more Application Specific Integrated Circuits (ASICs), Digital Signal Processors (DSPs), Digital Signal Processing Devices (DSPDs), Programmable Logic Devices (PLDs), Field Programmable Gate Arrays (FPGAs), processors, controllers, micro-controllers, microprocessors, and the like.
In a firmware or software configuration, embodiments of the present invention may be implemented in the form of modules, procedures, functions, and the like. The software codes may be stored in memory units and executed by processors. The memory unit is located inside or outside the processor, and may transmit and receive data to and from the processor via various known means.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Although the embodiments of the present invention have been disclosed, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (17)
1. A method of optical proximity correction, comprising:
obtaining a main pattern layout diagram, and inserting an initial auxiliary pattern to obtain an initial mask plate pattern;
searching a problem main pattern in the initial mask pattern, and recording the searching times of the problem main pattern plus 1, wherein the problem main pattern is a main pattern which is associated with each projection coefficient from each initial auxiliary pattern to the main pattern of the same main pattern and is smaller than a projection coefficient threshold value;
determining a deletable initial auxiliary graph and a replacement auxiliary graph of each problem main graph, deleting the deletable initial auxiliary graph, inserting and freezing the replacement auxiliary graph to obtain a replacement mask graph, and obtaining a target mask graph until the searching times reach a preset number or the problem main graph cannot be found in the replacement mask graph, wherein the projection coefficient of the replacement auxiliary graph to the problem main graph is larger than or equal to the projection coefficient threshold value.
2. The method for optical proximity correction according to claim 1, wherein the step of determining the deletable initial auxiliary graphic and the replacement auxiliary graphic for each of the problem host graphics comprises: determining one of the initial auxiliary graphs of the problem main graph as a pre-deleted initial auxiliary graph;
the method comprises the steps of pre-deleting the pre-deleted initial auxiliary graph, obtaining a replaceable auxiliary graph of the pre-deleted initial auxiliary graph and each associated main graph associated with the replaceable auxiliary graph, and determining that the pre-deleted initial auxiliary graph is the deletable initial auxiliary graph and the replaceable auxiliary graph corresponding to the deletable initial auxiliary graph is the replaceable auxiliary graph when each associated main graph of the replaceable auxiliary graph is a non-problem main graph, wherein the non-problem main graph is a main graph which is associated with the same main graph and has at least one of projection coefficients of each initial auxiliary graph to the main graph, and the projection coefficients are larger than or equal to the projection coefficient threshold value.
3. The method for optical proximity correction according to claim 2, wherein the step of determining the deletable initial auxiliary graphic and the replacement auxiliary graphic for each of the problem host graphics further comprises:
and when the associated main graphs of the replaceable auxiliary graphs contain the problem main graph and the initial auxiliary graphs of the problem main graph are not determined to be the pre-deleted initial auxiliary graphs in a traversing manner, replacing the pre-deleted initial auxiliary graphs in the initial auxiliary graphs of the problem main graph, and turning to the step of executing the pre-deleted initial auxiliary graphs.
4. The method for optical proximity correction according to claim 3, wherein the step of determining the deletable initial auxiliary graphic and the replacement auxiliary graphic for each of the problem host graphics further comprises:
when each associated main graph of the replaceable auxiliary graphs contains a problem main graph and each initial auxiliary graph of the problem main graph is determined to be a pre-deleted initial auxiliary graph in a traversing mode, one of the initial auxiliary graphs is determined to be the deletable initial auxiliary graph, and the replaceable auxiliary graph corresponding to the deletable initial auxiliary graph is determined to be the replaceable auxiliary graph.
5. The method for optical proximity correction according to claim 4, wherein the step of determining one of the initial auxiliary patterns as the deletable initial auxiliary pattern comprises: determining that the last initial auxiliary graphic determined as the pre-deleted initial auxiliary graphic is the deletable initial auxiliary graphic, among the initial auxiliary graphics.
6. The method for optical proximity correction according to claim 2, wherein the step of obtaining an alternative auxiliary pattern to the pre-deleted initial auxiliary pattern comprises:
determining the replaceable auxiliary graphic according to the setting of the main graphic and the setting of a non-pre-deleted initial auxiliary graphic, wherein the non-pre-deleted initial auxiliary graphic is each initial auxiliary graphic which is not determined as a pre-deleted initial auxiliary graphic;
setting an adjustment priority level of the problem main graph, and adjusting an insertion rule based on the adjustment priority level;
and pre-inserting the replaceable auxiliary graph according to the insertion rule to obtain the replaceable auxiliary graph of the pre-deleted initial auxiliary graph.
7. The method for optical proximity correction according to claim 2, wherein the step of determining a pre-deleted initial auxiliary graphic among the initial auxiliary graphics of the problem main graphic comprises:
determining one of the initial auxiliary graphics of the problem main graphic as a pre-deleted initial auxiliary graphic in a predetermined order.
8. The method for optical proximity correction according to claim 7, wherein the predetermined sequence is a sequence selected clockwise from being located to the right of the problem figure.
9. The method for optical proximity correction according to claim 1, wherein the step of finding a problem master pattern in the initial reticle pattern comprises:
acquiring each main pattern of the initial mask plate pattern and an initial auxiliary pattern associated with each main pattern;
performing the following operations on each main pattern to determine a problem main pattern in the initial mask pattern:
obtaining projection coefficients of each initial auxiliary graph related to the same main graph to the main graph;
and when each projection coefficient of the same main graph is smaller than the projection coefficient threshold value, determining that the main graph is the problem main graph.
10. The method of claim 9, wherein said step of obtaining respective projection coefficients of respective initial auxiliary patterns associated with the same primary pattern onto said primary pattern comprises:
determining a main figure size of the main figure in the projection extending direction and a projection size of each projection according to the projection of each initial auxiliary figure on the main figure;
and acquiring the projection coefficient of each initial auxiliary graph to the main graph according to the projection size of each projection and the size of the main graph.
11. The method for optical proximity correction according to any one of claims 1-10, wherein the predetermined number of times ranges from 3 times to 6 times.
12. The method for optical proximity correction according to any one of claims 1-10, further comprising:
and when the search times reach a preset number or the problem main graph cannot be found in the replacement mask graph, recording the search times and adding 1, and turning to the step of determining the deletable initial auxiliary graph and the replacement auxiliary graph of each problem main graph.
13. An optical proximity correction device, comprising:
the initial mask plate graph obtaining unit is suitable for obtaining the main graph layout graph and inserting the initial auxiliary graph to obtain an initial mask plate graph;
the problem main pattern obtaining unit is suitable for searching a problem main pattern in the initial mask pattern and recording the searching times of the problem main pattern plus 1, wherein the problem main pattern is a main pattern which is associated with each projection coefficient of each initial auxiliary pattern of the same main pattern to the main pattern and is smaller than a projection coefficient threshold value;
and a mask pattern obtaining unit, adapted to determine a deletable initial auxiliary pattern and a replacement auxiliary pattern of each of the problem main patterns, delete the deletable initial auxiliary pattern, insert and freeze the replacement auxiliary pattern, obtain a replacement mask pattern, until the search times reach a predetermined number of times or the problem main pattern cannot be found in the replacement mask pattern, and obtain a target mask pattern, wherein a projection coefficient of the replacement auxiliary pattern to the problem main pattern is greater than or equal to the projection coefficient threshold.
14. A mask, comprising: a target reticle pattern acquired using the optical proximity correction method of any one of claims 1-12.
15. A reticle, wherein a target reticle pattern of the reticle comprises:
a main pattern corresponding to a target pattern of lithography;
auxiliary graphics located between the main graphics;
the number of the problem main graphs in the main graphs is 0, wherein the problem main graphs are main graphs which are associated with the auxiliary graphs of the same main graph and have projection coefficients of the auxiliary graphs to the main graph, and the projection coefficients of the auxiliary graphs are all smaller than a threshold value of the projection coefficients.
16. An apparatus comprising at least one memory and at least one processor, the memory storing one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the optical proximity correction method of any one of claims 1-12.
17. A storage medium storing one or more computer instructions for implementing the method of optical proximity correction according to any one of claims 1-12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010071766.4A CN113219783B (en) | 2020-01-21 | 2020-01-21 | Optical proximity correction method, related device and mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010071766.4A CN113219783B (en) | 2020-01-21 | 2020-01-21 | Optical proximity correction method, related device and mask plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113219783A true CN113219783A (en) | 2021-08-06 |
| CN113219783B CN113219783B (en) | 2024-05-17 |
Family
ID=77085264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010071766.4A Active CN113219783B (en) | 2020-01-21 | 2020-01-21 | Optical proximity correction method, related device and mask plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113219783B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040202943A1 (en) * | 2003-03-07 | 2004-10-14 | Wolfgang Dettmann | Set of at least two masks for the projection of structure patterns and method for producing the masks |
| US20060246362A1 (en) * | 2005-05-02 | 2006-11-02 | Elpida Memory, Inc. | Mask data creation method |
| CN101122735A (en) * | 2006-08-11 | 2008-02-13 | 尔必达存储器株式会社 | Photomask, exposing method and instrument, image manufacturing and forming method, and semiconductor device |
| CN103186034A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| US20130266893A1 (en) * | 2012-04-04 | 2013-10-10 | Canon Kabushiki Kaisha | Method for generating mask pattern |
| US20140365985A1 (en) * | 2013-06-11 | 2014-12-11 | Canon Kabushiki Kaisha | Mask pattern generating method, recording medium, and information processing apparatus |
| CN109491196A (en) * | 2018-12-29 | 2019-03-19 | 上海华力集成电路制造有限公司 | A kind of OPC modification method improving contact hole technique hot spot |
| CN110361926A (en) * | 2018-04-10 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | The forming method of optical proximity effect correction model and its method for building up and mask plate |
-
2020
- 2020-01-21 CN CN202010071766.4A patent/CN113219783B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040202943A1 (en) * | 2003-03-07 | 2004-10-14 | Wolfgang Dettmann | Set of at least two masks for the projection of structure patterns and method for producing the masks |
| US20060246362A1 (en) * | 2005-05-02 | 2006-11-02 | Elpida Memory, Inc. | Mask data creation method |
| CN101122735A (en) * | 2006-08-11 | 2008-02-13 | 尔必达存储器株式会社 | Photomask, exposing method and instrument, image manufacturing and forming method, and semiconductor device |
| CN103186034A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| US20130266893A1 (en) * | 2012-04-04 | 2013-10-10 | Canon Kabushiki Kaisha | Method for generating mask pattern |
| CN103365072A (en) * | 2012-04-04 | 2013-10-23 | 佳能株式会社 | Method for generating mask pattern |
| US20140365985A1 (en) * | 2013-06-11 | 2014-12-11 | Canon Kabushiki Kaisha | Mask pattern generating method, recording medium, and information processing apparatus |
| CN110361926A (en) * | 2018-04-10 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | The forming method of optical proximity effect correction model and its method for building up and mask plate |
| CN109491196A (en) * | 2018-12-29 | 2019-03-19 | 上海华力集成电路制造有限公司 | A kind of OPC modification method improving contact hole technique hot spot |
Non-Patent Citations (2)
| Title |
|---|
| 蔡懿慈 等: "优化的基于模型的光学邻近矫正算法", 《半导体学报》, no. 3, 8 March 2005 (2005-03-08), pages 601 - 605 * |
| 韦亚一 等: "先导光刻中的光学邻近效应修正", 《微纳电子技术》, vol. 51, no. 3, 15 March 2014 (2014-03-15), pages 186 - 193 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113219783B (en) | 2024-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7043712B2 (en) | Method for adaptive segment refinement in optical proximity correction | |
| US7799487B2 (en) | Dual metric OPC | |
| US20170255392A1 (en) | Storage control device, storage control method, and recording medium | |
| US10713042B2 (en) | Arithmetic processing device and control method for arithmetic processing device | |
| WO2020108183A1 (en) | Method, apparatus and device for generating differential upgrade package | |
| US20080004852A1 (en) | Creating method of simulation model, manufacturing method of photo mask, manufacturing method of semiconductor device, and recording medium | |
| CN116819898A (en) | Mask pattern correction method and device and semiconductor device | |
| CN111488987B (en) | Method, system, equipment and medium for deep learning large model training | |
| CN113987987A (en) | Time sequence optimization method, system, equipment and storage medium | |
| JP5686567B2 (en) | Program and method for determining exposure conditions and mask pattern | |
| CN113219783A (en) | Optical proximity correction method, related device and mask plate | |
| US20070143234A1 (en) | Method and system for intelligent model-based optical proximity correction (OPC) | |
| CN115877650B (en) | Method for adding scattering bars and method for preparing mask | |
| CN111027688A (en) | Neural network calculator generation method and device based on FPGA | |
| JP2003344985A (en) | Layout pattern data correction system | |
| US6550051B1 (en) | Lithographic data verification method and photo mask manufacturing method | |
| CN115062581A (en) | Storage method, device and system of capacitor matrix, electronic device and storage medium | |
| CN111159969B (en) | Method and apparatus for generating multiple patterning mask layout and computer readable medium | |
| JP4048752B2 (en) | Pattern data correction method, pattern data correction apparatus and program thereof | |
| JP4946655B2 (en) | Design support program, recording medium recording the program, design support apparatus, and design support method | |
| US20220366239A1 (en) | Storage medium, machine learning method, and information processing device | |
| CN116366538A (en) | Path updating and equivalent path planning method and related device under dynamic network | |
| JPH0794376A (en) | Correction of data for exposure pattern | |
| CN110929102B (en) | Data processing method and device and electronic equipment | |
| CN114861579B (en) | Method and system for analyzing and optimizing time sequence bottleneck node in integrated circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |