CN113210241A - Ultrasonic transmitting/receiving sensor and method for manufacturing the same - Google Patents
Ultrasonic transmitting/receiving sensor and method for manufacturing the same Download PDFInfo
- Publication number
- CN113210241A CN113210241A CN202110358800.0A CN202110358800A CN113210241A CN 113210241 A CN113210241 A CN 113210241A CN 202110358800 A CN202110358800 A CN 202110358800A CN 113210241 A CN113210241 A CN 113210241A
- Authority
- CN
- China
- Prior art keywords
- transmission line
- piezoelectric wafer
- ultrasonic
- shell
- transmitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims abstract description 90
- 230000001681 protective effect Effects 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000003466 welding Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 229920001971 elastomer Polymers 0.000 claims description 2
- 229920006335 epoxy glue Polymers 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 106
- 238000013016 damping Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
- B06B1/0651—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element of circular shape
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
- G01H11/08—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
The present disclosure provides an ultrasonic transmitting/receiving sensor and a method for manufacturing the same, wherein the ultrasonic transmitting/receiving sensor includes: the piezoelectric wafer is used for receiving or transmitting ultrasonic signals; one end of the transmission line is connected with the piezoelectric wafer and is used for transmitting ultrasonic signals; the rigid supporting structure is arranged on one side of the piezoelectric wafer, which is connected with the transmission line; the joint is connected with the other end of the transmission line and is used for transmitting the received ultrasonic signals to the piezoelectric wafer through the transmission line or receiving the transmitted ultrasonic signals transmitted by the transmission line and transmitting the transmitted ultrasonic signals; the casing, piezoelectric wafer, transmission line, rigid support structure and joint all set up inside the casing. Thus, the rigid support structure can support and protect the piezoelectric wafer, and the rigid support structure does not absorb or absorbs little vibration energy of the wafer, so that the intensity of transmission or reception of ultrasonic signals of the piezoelectric wafer can be improved, and the sensitivity of the whole sensor is improved.
Description
Technical Field
The disclosure relates to the technical field of sensors, in particular to an ultrasonic transmitting/receiving sensor and a preparation method thereof.
Background
An ultrasonic sensor is a device for generating and receiving ultrasonic waves. The function is to convert electrical energy into acoustic energy and acoustic energy into electrical energy. The key components of an ultrasonic sensor are piezoelectric transducers, also called piezoelectric wafers, which transmit ultrasonic waves by the inverse piezoelectric effect and receive ultrasonic waves by the positive piezoelectric effect.
The piezoelectric wafer transmits ultrasonic waves by the inverse piezoelectric effect and receives ultrasonic waves by the positive piezoelectric effect. Therefore, in the prior art, a damping layer made of a sound-absorbing material is generally arranged on one side of the piezoelectric wafer, and the damping layer can increase the vibration damping of the piezoelectric wafer, so that the vibration time of the piezoelectric wafer is shortened, the vibrating piezoelectric wafer is restored to a static state as soon as possible, and the reception of echo signals by the piezoelectric wafer is facilitated.
However, for transmitting an ultrasonic signal, the damping layer weakens the intensity of the ultrasonic transmission signal; for receiving ultrasonic signals, the damping layer attenuates the intensity of the received ultrasonic signals.
Disclosure of Invention
In view of the above, an object of the present disclosure is to provide an ultrasonic wave transmitting/receiving sensor and a method of manufacturing the same so as to overcome the above problems or at least partially solve the same.
In view of the above object, a first aspect of the present disclosure provides an ultrasonic wave transmitting/receiving sensor including:
the piezoelectric wafer is used for converting an ultrasonic signal into an electric signal or converting the electric signal into an ultrasonic signal;
one end of the transmission line is connected with the piezoelectric wafer and is used for transmitting the ultrasonic signal;
the rigid supporting structure is arranged on one side of the piezoelectric wafer, which is connected with the transmission line, wherein the transmission line is partially arranged in or partially arranged in the rigid supporting structure in a penetrating way;
the joint is connected with the other end of the transmission line and is used for transmitting the received ultrasonic signals to the piezoelectric wafer through the transmission line or receiving the transmitted ultrasonic signals transmitted by the transmission line and transmitting the transmitted ultrasonic signals;
the casing, the piezoelectric wafer, the transmission line, hard bearing structure and the joint all set up inside the casing.
In view of the above object, a second aspect of the present disclosure provides a method of manufacturing an ultrasonic wave transmitting/receiving sensor, including:
respectively welding corresponding leads on the anode and the cathode of the piezoelectric wafer;
arranging the welded piezoelectric wafer on the inner side of the bottom of the shell;
connecting one end of a transmission line with the anode or the cathode of the piezoelectric wafer;
arranging a rigid supporting structure at the bottom of the shell provided with the piezoelectric wafer, wherein the transmission line is partially arranged in or partially penetrated through the rigid supporting structure;
after the other end of the transmission line is connected with the joint, the joint is sleeved in the shell.
As can be seen from the above, according to the ultrasonic transmitting/receiving sensor and the manufacturing method thereof provided by the present disclosure, after the piezoelectric wafer is disposed at the bottom of the housing, the rigid supporting structure is disposed on one side of the piezoelectric wafer at the bottom of the housing, the rigid supporting structure can support and protect the piezoelectric wafer, and the rigid supporting structure does not absorb or absorbs little vibration energy of the wafer, so that the intensity of transmitting or receiving the ultrasonic signal of the piezoelectric wafer can be increased, and the overall sensitivity of the sensor can be further improved.
Drawings
In order to more clearly illustrate the technical solutions in the present disclosure or related technologies, the drawings needed to be used in the description of the embodiments or related technologies are briefly introduced below, and it is obvious that the drawings in the following description are only embodiments of the present disclosure, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural view of an ultrasonic transmitting/receiving sensor according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural view of an ultrasonic transmitting/receiving sensor according to another embodiment of the present disclosure;
FIG. 3 is a flow chart of a method of manufacturing an ultrasonic transmit/receive sensor according to an embodiment of the present disclosure;
fig. 4 is a flowchart of a method of manufacturing an ultrasonic transmission/reception sensor according to another embodiment of the present disclosure.
Description of the drawings: 1. a piezoelectric wafer; 2. a transmission line; 3. a rigid support structure;
4. a joint; 41. a data terminal; 42 a tab wafer;
5. a housing; 51. a first housing; 52. a second housing; 53 a shell cover;
6. a protective film;
7. and a fixing ring.
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
It should be noted that: the relative arrangement of the components, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise.
Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses.
It is to be noted that technical terms or scientific terms used in the embodiments of the present disclosure should have a general meaning as understood by those having ordinary skill in the art to which the present disclosure belongs, unless otherwise defined. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include direct or indirect electrical connections.
The original purpose of designing the damping layer of the traditional ultrasonic sensor is to reduce the aftershock of the piezoelectric wafer, so that the piezoelectric wafer can stop vibrating quickly after receiving a single ultrasonic pulse, prepare to receive the next coming ultrasonic pulse signal and avoid the aftershock from interfering the subsequent ultrasonic signal. At the same time, this design also brings about the corresponding disadvantages, that is: for the ultrasonic emission sensor, the damping coefficient of the damping layer is large, so that the damping layer weakens the intensity of the emitted ultrasonic signal; for the ultrasonic receiving sensor, the damping layer weakens the intensity of the received ultrasonic signal due to the larger damping coefficient of the damping layer.
Therefore, for a single-function ultrasonic transmitting sensor or ultrasonic receiving sensor, the damping layer needs to be removed, and the damping layer is replaced by a rigid supporting structure formed by pouring a rigid material, so that the transmitting or receiving intensity of the ultrasonic signal of the piezoelectric wafer can be improved, and the overall sensitivity of the sensor is further improved.
As shown in fig. 1, the present embodiment proposes an ultrasonic wave transmission/reception sensor including:
the piezoelectric wafer 1 is used for converting an ultrasonic signal into an electric signal or converting an electric signal into an ultrasonic signal.
Among them, the piezoelectric wafer 1 can convert an electric signal into an ultrasonic signal (i.e., transmit an ultrasonic signal) by using the inverse piezoelectric effect, and can also convert an ultrasonic signal into an electric signal (i.e., receive an ultrasonic signal) by using the positive piezoelectric effect. The piezoelectric wafer 1 generally includes two stages, i.e., a positive electrode and a negative electrode. In addition, in order to facilitate circuit arrangement inside the sensor, holes are drilled or grooves are formed in the welding points of the piezoelectric wafer 1 in advance, so that the piezoelectric wafer 1 can be mounted.
And one end of the transmission line 2 is connected with the piezoelectric wafer 1 and is used for transmitting ultrasonic signals and connecting the positive pole or the negative pole of the piezoelectric wafer 1.
Wherein, transmission line 2 is: the cable is composed of an inner metal wire and an outer wrapping insulating material.
And the rigid supporting structure 3 is arranged on one side of the piezoelectric wafer 1, which is connected with the transmission line 2, wherein the transmission line is partially arranged in or partially arranged in the rigid supporting structure in a penetrating way. The positive electrode and the negative electrode of the piezoelectric wafer 1 are welded and arranged at the bottom of the shell 5, and after the piezoelectric wafer 1 and the transmission line 2 are connected, the piezoelectric wafer 1 and the shell 5 form a barrel-shaped structure. Therefore, the rigid support structure can be arranged on one side of the piezoelectric wafer 1, the piezoelectric wafer 1 can be supported and protected, and meanwhile, the strength of the transmission or reception of the ultrasonic signals of the piezoelectric wafer 1 can be improved because the rigid support structure 3 is higher in rigidity and does not absorb or absorbs less wafer vibration energy.
And the joint 4 is connected with the other end of the transmission line 2 and is used for transmitting the received ultrasonic signal to the piezoelectric wafer 1 through the transmission line 2 or receiving the transmitted ultrasonic signal transmitted from the transmission line 2 and transmitting the transmitted ultrasonic signal.
Wherein, because the transmission or receiving effect of the transmission line 2 is not good, a connector 4 is required to be connected to the other end of the transmission line 2, and the connector 4 can better receive or transmit the ultrasonic signal.
The housing 5, the piezoelectric wafer 1, the transmission line 2, the rigid support structure 3 and the joint 4 are all arranged inside the housing 5.
The housing 5 is used to protect and support the components inside the housing, and prevent the components from being damaged by external force.
In the above scheme, the ultrasonic wave transmitting process for the ultrasonic wave transmitting sensor: the piezoelectric wafer 1 receives the electrical signal, converts the electrical signal into a corresponding vibration signal (i.e., an ultrasonic signal) using the inverse piezoelectric effect, and transmits the ultrasonic signal to the joint 4 through the transmission line 2. Because one side of piezoelectric wafer 1 is equipped with rigid bearing structure 3, utilizes rigid great characteristics of rigid bearing structure 3, can improve the intensity of the ultrasonic signal's of piezoelectric wafer 1 transmission, then utilizes joint 4 to go out ultrasonic signal transmission again, and then has improved the sensitivity of ultrasonic emission sensor.
An ultrasonic wave receiving process for the ultrasonic wave receiving sensor: the connector 4 transmits the received ultrasonic signal to the piezoelectric wafer 1 through the transmission line 2, and the rigid supporting structure 3 is arranged on one side of the piezoelectric wafer 1, so that the intensity of the ultrasonic signal received by the piezoelectric wafer 1 can be improved by utilizing the characteristic of high rigidity of the rigid supporting structure 3, and then the piezoelectric wafer 1 converts the ultrasonic signal into a corresponding electric signal, so that the sensitivity of ultrasonic receiving of the ultrasonic receiving sensor is improved.
Through the scheme, after the piezoelectric wafer 1 is arranged at the bottom of the shell 5, the rigid supporting structure 3 can support and protect the piezoelectric wafer 1, and the rigid supporting structure 3 has higher hardness and does not or hardly absorb the vibration energy of the wafer, so that the transmitting or receiving intensity of the ultrasonic signal of the piezoelectric wafer 1 can be improved, and the overall sensitivity of the sensor is further improved.
Further, as shown in fig. 2, the ultrasonic wave transmission/reception sensor further includes: a fixing ring 7 arranged on the side of the piezoelectric wafer 1 connected with the transmission line 2, the transmission line 2 is partially arranged in the fixing ring 7, wherein the diameter of the fixing ring 7 is smaller than that of the shell 5; the rigid supporting structure is an annular structure matched with the gap between the fixed ring and the shell, and the annular structure is fixed in the gap between the fixed ring and the shell.
Wherein, after placing the piezoelectric wafer 1 that will weld the completion in the bottom of casing 5, place a retainer plate 7 on the center of piezoelectric wafer 1, pass retainer plate 7 with transmission line 2, then set up rigid support structure in the clearance of retainer plate 7 and casing 5 again, be convenient for like this transmission line 2's installation and maintenance change.
In addition, the diameter of the inner ring of the fixing ring 7 can be selected and set according to actual needs, the transmission line 2 can conveniently penetrate through the fixing ring, and the specific size is not limited specifically. The diameter of the outer ring of the fixed ring 7 can be selected and set according to actual needs, so that a gap can be ensured to be reserved between the fixed ring and the shell 5, and the rigid support structure 3 in the gap space can be ensured to improve the intensity of transmitting or receiving the ultrasonic signals of the piezoelectric wafer 1.
Further, the rigid support structure 3 comprises at least one of: metal bearing structure, organic glass bearing structure, stereoplasm rubber bearing structure, epoxy glue bearing structure and plastics bearing structure. .
Wherein the metal support structure is preferably a steel support structure made of a steel material.
Further, as shown in fig. 1, the housing 5 includes:
the piezoelectric chip 1 is arranged at the bottom of the first shell 51, and after the piezoelectric chip 1 is connected with one end of the transmission line 2, the rigid support structure 3 is arranged in the first shell 51.
In which, an opening is opened at the bottom of the first housing 51 for mounting the piezoelectric wafer 1. And, the shape of the opening of the corresponding first shell 51 is matched with the shape of the piezoelectric wafer 1, so that the piezoelectric wafer 1 and the first shell 51 can form a barrel-shaped structure after being combined, and a rigid support structure is convenient to arrange.
And a second housing 52, wherein the connector 4 is arranged in the second housing 52, and the other end of the transmission line 2 passes through the first housing 51 to be connected with the connector 4.
The shape of the second shell 52 is matched with that of the connector 4, the bottom opening of the second shell 52 is matched with the top opening of the first shell 51, therefore, after all devices in the first shell 51 are arranged, the transmission line 2 is connected with the connector 4, then the second shell 52 is wrapped on the connector 4 to cover the first shell 51, and the openings of the two shells 5 are correspondingly closed to form a closed chamber to protect all the components.
Further, as shown in fig. 1, a cover is disposed on the top of the first housing 51, a connection interface is disposed on the cover in a penetrating manner, and the other end of the transmission line 2 is connected to the connector 4 through the connection interface.
Wherein, wiring interface includes any one of following: a BNC (Bayonet Nut Connector) interface, an sma (small a type) interface, an L6(line 6) interface, and the like. The specific type of the application can be selected according to the actual needs of the user.
Wherein, set up the part that can be better in first casing 51 like setting up the shell lid at the top of first casing 51 and protect, in addition in order to facilitate the connection of joint 4 and transmission line 2, wear to establish the shell lid with the interface that connects. Thus, the transmission line 2 can be connected to a connection interface, the connection interface generally includes a battery cell and a housing for connecting two electrodes, specifically: the positive electrode of the piezoelectric wafer 1 is connected with the electric core of the wiring interface through the transmission line 2, and the negative electrode of the piezoelectric wafer 1 is connected with the shell of the wiring interface; or, the positive electrode of the piezoelectric wafer 1 is connected with the shell of the wiring interface through the transmission line 2, and the negative electrode of the piezoelectric wafer 1 is connected with the electric core of the wiring interface. And then the joint 4 is well connected with the corresponding electric core and the shell of the wiring interface.
In this way, the first housing 51 and the second housing 52 are separated by the housing cover, so that the internal components can be better fixed, the internal components can be protected, and meanwhile, the quality of ultrasonic signal transmission can be ensured by using the wiring interface.
Further, as shown in fig. 1, a protective film 6 is provided on the other side of the piezoelectric wafer 1.
The piezoelectric ceramic wafer 1 is generally a piezoelectric ceramic wafer, which is usually very fragile, and when the piezoelectric ceramic wafer is directly scanned along the surface of a workpiece in a direct contact manner, the piezoelectric ceramic wafer is easily damaged. For this reason, a thin protective film 6 is usually adhered to the other side of the piezoelectric ceramic wafer (i.e., the side away from the transmission line 2) to protect the piezoelectric ceramic wafer and the electrodes from being worn or damaged, and on the other hand, to improve the coupling effect with the workpiece. The thickness of the protective film 6 is preferably 0.1mm to 0.3 mm.
In addition, after the welding of the two electrodes of the piezoelectric wafer 1 is completed, the protective film 6 is adhered to the piezoelectric wafer 1, and then the protective film 6 and the piezoelectric wafer 1 are placed at the bottom of the case 5, thereby forming a barrel-shaped structure with the case 5. And then the rigid support structure 3 is arranged at the bottom of the shell 5, and the rigid support structure 3 can better support and protect the piezoelectric wafer 1.
Further, the periphery of the protective film 6 is wider than the periphery of the piezoelectric wafer 1.
A groove wider than the diameter of the piezoelectric wafer 1 is correspondingly formed in the bottom of the housing 5 at the mounting position corresponding to the protective film 6, and the shape of the corresponding groove is matched with that of the protective film 6, so that the protective film 6 can be placed in the groove and cannot be displaced into the housing 5 from the bottom of the housing 5.
Further, the protective film 6 includes: a hard protective film 6 and/or a soft protective film 6.
The hard protective film 6 is made of materials such as alumina, sapphire, boron carbide, tungsten carbide, silica sand-containing plastics and the like, and is suitable for detecting workpieces with smooth surfaces. For the detection of workpieces with rough surfaces, a replaceable soft protective film 6 made of polyurethane plastic and the like is often adopted to improve the coupling effect. The protective film 6 is generally made of a material having high strength, good wear resistance, small attenuation coefficient, appropriate thickness and good sound transmission performance.
Further, as shown in fig. 1, the joint 4 includes:
a data terminal 41 connected to the other end of the transmission line 2, for transmitting the received ultrasonic signal to the piezoelectric wafer 1 through the transmission line 2, or receiving the transmitted ultrasonic signal transmitted from the transmission line 2 and transmitting the transmitted ultrasonic signal to the outside; the connector 4 chip is sleeved on the outer side of the data terminal 41 with a gap.
Wherein the data terminal 41 is used for receiving or transmitting ultrasonic signals, and the tab 4 wafer is used for protecting the data terminal 41. In order to ensure the accuracy of the data terminal 41 receiving or transmitting ultrasonic signals, the tab 4 wafer is generally made of glass material, but the glass material is fragile and easy to break, so that a second protective shell is required for further protection.
The shape of the second protective shell is matched with the shape of the joint 4 wafer, so that the joint 4 wafer can be sleeved in the second protective shell.
Furthermore, a metal layer anode is plated on one side of the piezoelectric wafer 1, a metal layer cathode is plated on the other side of the piezoelectric wafer 1, and the metal layer anode or the metal layer cathode is connected with the connector 4 through the transmission line 2.
Wherein the metal layer is preferably at least one of: a silver layer, a gold layer, and a platinum layer.
The thickness of the piezoelectric wafer 1 is 0.2mm to 18mm, and the shape of the piezoelectric wafer 1 is circular, rectangular, elliptical, polygonal, or the like, and is specifically selected and set according to actual needs, and the specific shape is not specifically limited here as long as the piezoelectric wafer can convert an electrical signal and an ultrasonic signal.
Based on the same inventive concept and in combination with the description of the ultrasonic transmitting/receiving sensor of each of the above embodiments, this embodiment provides a method for manufacturing an ultrasonic transmitting/receiving sensor, which has the corresponding technical effects of the ultrasonic transmitting/receiving sensor of each of the above embodiments, and is not described herein again.
As shown in fig. 3, the steps of the method include:
and step 201, welding corresponding leads on the positive electrode and the negative electrode of the piezoelectric wafer respectively.
And 204, arranging a rigid supporting structure at the bottom of the shell provided with the piezoelectric wafer, wherein the transmission line part is arranged in or partially penetrates through the rigid supporting structure.
The ultrasonic transmitting/receiving sensor can be prepared through the steps, the piezoelectric wafer is arranged at the bottom of the shell, then the rigid supporting structure is arranged at the bottom of the shell, the rigid supporting structure can support and protect the piezoelectric wafer, and the rigid supporting structure has higher hardness and does not or less absorb the vibration energy of the wafer, so that the transmitting or receiving intensity of the ultrasonic signal of the piezoelectric wafer can be improved, and the integral sensitivity of the sensor is further improved.
Further, before step 202, the method further includes:
step 202', the piezoelectric wafer after welding and the corresponding protective film are adhered.
Thus, the corresponding step 202 is specifically: the piezoelectric wafer and the protective film which are adhered into a whole are arranged on the inner side of the bottom of the shell, and the shell, the piezoelectric wafer and the protective film form a barrel-shaped structure.
Further, step 204 specifically includes:
a fixed ring is arranged at the center of the piezoelectric wafer, the transmission line penetrates through the fixed ring, and then the rigid support structure is arranged in a gap between the fixed ring and the shell.
In another embodiment, as shown in fig. 4, the method comprises the following specific steps:
and step 301, welding corresponding leads on the positive electrode and the negative electrode of the piezoelectric wafer respectively.
And 302, adhering the welded piezoelectric wafer and the corresponding protective film.
And 307, connecting the data terminal of the joint with the wiring interface of the shell cover.
The ultrasonic transmitting/receiving sensor prepared by the steps can better protect each structural component and can ensure the transmission quality of ultrasonic signals.
It should be noted that the above describes some embodiments of the disclosure. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims may be performed in a different order than in the embodiments described above and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing may also be possible or may be advantageous.
The embodiments in the disclosure are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts in the embodiments are referred to each other.
The description of the present disclosure has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the disclosure in the form disclosed. Many modifications and variations will be apparent to practitioners skilled in this art. The embodiment was chosen and described in order to best explain the principles of the disclosure and the practical application, and to enable others of ordinary skill in the art to understand the disclosure for various embodiments with various modifications as are suited to the particular use contemplated.
Those of ordinary skill in the art will understand that: the discussion of any embodiment above is meant to be exemplary only, and is not intended to intimate that the scope of the disclosure, including the claims, is limited to these examples; within the idea of the present disclosure, also technical features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present disclosure as described above, which are not provided in detail for the sake of brevity.
While the present disclosure has been described in conjunction with specific embodiments thereof, many alternatives, modifications, and variations of these embodiments will be apparent to those of ordinary skill in the art in light of the foregoing description.
The disclosed embodiments are intended to embrace all such alternatives, modifications and variances which fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalents, improvements, and the like that may be made within the spirit and principles of the embodiments of the disclosure are intended to be included within the scope of the disclosure.
Claims (10)
1. An ultrasonic wave transmission/reception sensor comprising:
the piezoelectric wafer is used for converting an ultrasonic signal into an electric signal or converting the electric signal into an ultrasonic signal;
one end of the transmission line is connected with the piezoelectric wafer and is used for transmitting the ultrasonic signal;
the rigid supporting structure is arranged on one side of the piezoelectric wafer, which is connected with the transmission line, wherein the transmission line is partially arranged in or partially arranged in the rigid supporting structure in a penetrating way;
the joint is connected with the other end of the transmission line and is used for transmitting the received ultrasonic signals to the piezoelectric wafer through the transmission line or receiving the transmitted ultrasonic signals transmitted by the transmission line and transmitting the transmitted ultrasonic signals;
the casing, the piezoelectric wafer, the transmission line, hard bearing structure and the joint all set up inside the casing.
2. The ultrasonic wave transmission/reception sensor according to claim 1, further comprising: a fixing ring disposed on a side of the piezoelectric wafer to which the transmission line is connected, the transmission line being partially disposed within the fixing ring, wherein the fixing ring has a diameter smaller than that of the case;
the rigid supporting structure is an annular structure matched with the gap between the fixed ring and the shell, and the annular structure is fixed in the gap between the fixed ring and the shell.
3. The ultrasonic transmit/receive sensor according to claim 1 or 2, wherein the rigid support structure comprises at least one of:
metal bearing structure, organic glass bearing structure, stereoplasm rubber bearing structure, epoxy glue bearing structure and plastics bearing structure.
4. The ultrasonic wave transmission/reception sensor according to claim 1, wherein the housing includes:
the piezoelectric wafer is arranged at the bottom of the first shell, and the hard support structure is arranged in the first shell;
the joint is arranged in the second shell, and the other end of the transmission line penetrates through the first shell to be connected with the joint.
5. The ultrasonic transmitting/receiving sensor according to claim 4, wherein a housing cover is provided on a top of the first housing, a wiring interface is disposed through the housing cover, and the other end of the transmission line is connected to the connector through the wiring interface.
6. The ultrasonic transmission/reception sensor according to claim 1, wherein a protective film is provided on the other side of the piezoelectric wafer.
7. The ultrasonic transmission/reception sensor according to claim 6, wherein the periphery of the protective film is wider than the periphery of the piezoelectric wafer.
8. The ultrasonic wave transmission/reception sensor according to claim 1, wherein the joint includes:
the data terminal is connected with the other end of the transmission line and used for transmitting the received ultrasonic signals to the piezoelectric wafer through the transmission line or receiving the transmitted ultrasonic signals transmitted by the transmission line and sending the transmitted ultrasonic signals outwards;
and the connector wafer is sleeved outside the data terminal in a clearance manner.
9. The ultrasonic transmission/reception sensor according to claim 1, wherein a metal layer positive electrode is plated on one side of the piezoelectric wafer, and a metal layer negative electrode is plated on the other side of the piezoelectric wafer, and the metal layer positive electrode or the metal layer negative electrode is connected to the joint through a transmission line.
10. A method for manufacturing an ultrasonic wave transmitting/receiving sensor, comprising:
respectively welding corresponding leads on the anode and the cathode of the piezoelectric wafer;
arranging the welded piezoelectric wafer on the inner side of the bottom of the shell;
connecting one end of a transmission line with the anode or the cathode of the piezoelectric wafer;
arranging a rigid supporting structure at the bottom of the shell provided with the piezoelectric wafer, wherein the transmission line is partially arranged in or partially penetrated through the rigid supporting structure;
after the other end of the transmission line is connected with the joint, the joint is sleeved in the shell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110358800.0A CN113210241B (en) | 2021-04-01 | 2021-04-01 | Ultrasonic transmitting/receiving sensor and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110358800.0A CN113210241B (en) | 2021-04-01 | 2021-04-01 | Ultrasonic transmitting/receiving sensor and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113210241A true CN113210241A (en) | 2021-08-06 |
| CN113210241B CN113210241B (en) | 2022-08-23 |
Family
ID=77086321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110358800.0A Active CN113210241B (en) | 2021-04-01 | 2021-04-01 | Ultrasonic transmitting/receiving sensor and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113210241B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3346838A (en) * | 1965-05-03 | 1967-10-10 | Mandrel Industries | Pressure sensitive detector for marine seismic exploration |
| US5297553A (en) * | 1992-09-23 | 1994-03-29 | Acuson Corporation | Ultrasound transducer with improved rigid backing |
| CN104090032A (en) * | 2014-07-10 | 2014-10-08 | 北京工业大学 | Air-coupled transducer based on air-based 1-3 type piezoelectric composite material |
| CN104226576A (en) * | 2013-06-18 | 2014-12-24 | 柯宜京 | Back lining structural system for thickness mode vibration ultrasonic transducer |
| CN109168106A (en) * | 2018-10-19 | 2019-01-08 | 海鹰企业集团有限责任公司 | A kind of underwater acoustic transducer with self sealing structure |
| CN209878680U (en) * | 2019-02-01 | 2019-12-31 | 平拓(上海)新材料科技有限公司 | Self-focusing water immersion probe of composite material wafer for ultrasonic automatic detection of convex-arc-surface workpiece |
-
2021
- 2021-04-01 CN CN202110358800.0A patent/CN113210241B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3346838A (en) * | 1965-05-03 | 1967-10-10 | Mandrel Industries | Pressure sensitive detector for marine seismic exploration |
| US5297553A (en) * | 1992-09-23 | 1994-03-29 | Acuson Corporation | Ultrasound transducer with improved rigid backing |
| CN104226576A (en) * | 2013-06-18 | 2014-12-24 | 柯宜京 | Back lining structural system for thickness mode vibration ultrasonic transducer |
| CN104090032A (en) * | 2014-07-10 | 2014-10-08 | 北京工业大学 | Air-coupled transducer based on air-based 1-3 type piezoelectric composite material |
| CN109168106A (en) * | 2018-10-19 | 2019-01-08 | 海鹰企业集团有限责任公司 | A kind of underwater acoustic transducer with self sealing structure |
| CN209878680U (en) * | 2019-02-01 | 2019-12-31 | 平拓(上海)新材料科技有限公司 | Self-focusing water immersion probe of composite material wafer for ultrasonic automatic detection of convex-arc-surface workpiece |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113210241B (en) | 2022-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6324907B1 (en) | Flexible substrate transducer assembly | |
| US5389848A (en) | Hybrid ultrasonic transducer | |
| US9521499B2 (en) | Electronic device with large back volume for electromechanical transducer | |
| CN101715157B (en) | Cascade and parallel piezoelectric composite material-based cylindrical transducer | |
| US3713086A (en) | Hydrophone | |
| US6825594B1 (en) | Ultrasonic transducer | |
| US4433399A (en) | Ultrasonic transducers | |
| JP6057319B2 (en) | Condenser microphone | |
| CN113210241B (en) | Ultrasonic transmitting/receiving sensor and method for manufacturing the same | |
| JP2019535164A (en) | Hydrophone, energy conversion method and composite hydrophone | |
| US11368794B2 (en) | MEMS microphone with integrated resistor heater | |
| KR101218550B1 (en) | Ultrasonic active sensor | |
| CN211240080U (en) | MEMS vibration sensor | |
| CN107543864B (en) | Acoustic array sensor for spacecraft leakage positioning | |
| CN210775337U (en) | Frequency-adjustable ultrasonic probe | |
| JP2008136195A (en) | Condenser microphone | |
| CN207215138U (en) | Ultrasonic sensor | |
| RU2166840C2 (en) | Hydroacoustic antenna | |
| JP4812378B2 (en) | Condenser microphone | |
| CN107462268A (en) | Ultrasonic sensor | |
| CN115506781A (en) | Drill collar structure | |
| CN211217400U (en) | Integrated double-frequency transducer | |
| CN112763862B (en) | GIS built-in ultrasonic partial discharge sensor | |
| CN209706939U (en) | Round tube hydrophone | |
| JP5481184B2 (en) | Ultrasonic receiver |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |