CN113193845A - 具有特殊支撑衬底射频谐振器及其制备方法 - Google Patents
具有特殊支撑衬底射频谐振器及其制备方法 Download PDFInfo
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- CN113193845A CN113193845A CN202110373825.8A CN202110373825A CN113193845A CN 113193845 A CN113193845 A CN 113193845A CN 202110373825 A CN202110373825 A CN 202110373825A CN 113193845 A CN113193845 A CN 113193845A
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- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 5
- 238000005336 cracking Methods 0.000 abstract 1
- 235000019687 Lamb Nutrition 0.000 description 14
- 230000008021 deposition Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110373825.8A CN113193845A (zh) | 2021-04-07 | 2021-04-07 | 具有特殊支撑衬底射频谐振器及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110373825.8A CN113193845A (zh) | 2021-04-07 | 2021-04-07 | 具有特殊支撑衬底射频谐振器及其制备方法 |
Publications (1)
Publication Number | Publication Date |
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CN113193845A true CN113193845A (zh) | 2021-07-30 |
Family
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Family Applications (1)
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CN202110373825.8A Pending CN113193845A (zh) | 2021-04-07 | 2021-04-07 | 具有特殊支撑衬底射频谐振器及其制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN113193845A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080246559A1 (en) * | 2007-01-19 | 2008-10-09 | Farrokh Ayazi | Lithographically-defined multi-standard multi-frequency high-Q tunable micromechanical resonators |
JP2012099925A (ja) * | 2010-10-29 | 2012-05-24 | Murata Mfg Co Ltd | 弾性波素子及びその製造方法 |
JP2012257019A (ja) * | 2011-06-08 | 2012-12-27 | Murata Mfg Co Ltd | 弾性波装置 |
CN112352382A (zh) * | 2018-06-15 | 2021-02-09 | 谐振公司 | 一种横向激励的薄膜体声波谐振器 |
-
2021
- 2021-04-07 CN CN202110373825.8A patent/CN113193845A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080246559A1 (en) * | 2007-01-19 | 2008-10-09 | Farrokh Ayazi | Lithographically-defined multi-standard multi-frequency high-Q tunable micromechanical resonators |
US20100066467A1 (en) * | 2007-01-19 | 2010-03-18 | Farrokh Ayazi | Lithographically Defined Multi-Standard Multi-Frequency High-Q Tunable Micromechanical Resonators |
JP2012099925A (ja) * | 2010-10-29 | 2012-05-24 | Murata Mfg Co Ltd | 弾性波素子及びその製造方法 |
JP2012257019A (ja) * | 2011-06-08 | 2012-12-27 | Murata Mfg Co Ltd | 弾性波装置 |
CN112352382A (zh) * | 2018-06-15 | 2021-02-09 | 谐振公司 | 一种横向激励的薄膜体声波谐振器 |
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PB01 | Publication | ||
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Effective date of registration: 20220407 Address after: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Applicant after: Ningbo Huazhang enterprise management partnership (L.P.) Address before: 430072 Hubei Province, Wuhan city Wuchang District of Wuhan University Luojiashan Applicant before: WUHAN University |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220825 Address after: No.01, 4th floor, building D7, phase 3, Wuhan Software New Town, No.9 Huacheng Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Applicant after: Wuhan Minsheng New Technology Co.,Ltd. Address before: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Applicant before: Ningbo Huazhang enterprise management partnership (L.P.) |
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RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20210730 |