CN113193841A - Amplifier bias circuit with enable control - Google Patents

Amplifier bias circuit with enable control Download PDF

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Publication number
CN113193841A
CN113193841A CN202110540675.5A CN202110540675A CN113193841A CN 113193841 A CN113193841 A CN 113193841A CN 202110540675 A CN202110540675 A CN 202110540675A CN 113193841 A CN113193841 A CN 113193841A
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China
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transistor
amplifier
hbt
collector
base
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CN202110540675.5A
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许欢
冷益平
余锐
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Wuhu Maikewei Electromagnetic Technology Co ltd
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Wuhu Maikewei Electromagnetic Technology Co ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses an amplifier bias circuit with an enable control function, which comprises an enable signal input circuit, a reference voltage input end, a transistor HBT3, a transistor HBT4, a transistor HBT5 and a transistor HBT6, wherein the enable signal input circuit is connected with a base electrode of HBT 3; a reference voltage input terminal VREF is connected to the collector of a transistor HBT3 through a resistor R5; the emitter of the transistor HBT3 is respectively connected with the collector of the transistor HBT4, the base of HBT4 and the base of the transistor HBT 6; the emitter of the transistor HBT4 is respectively connected with the collector and the base of HBT 5; the emitter of transistor HBT5 is connected to ground; the collector of transistor HBT6 is connected to reference voltage input VREF; the emitter terminal of transistor HBT6 is used to output a bias current to control the switching of the amplifier. The invention has the advantages that: the bias circuit has an enabling control function, the operation of the bias circuit can be controlled according to the enabling control function, and the bias current can be linearly adjusted in a large range through the reference voltage end.

Description

Amplifier bias circuit with enable control
Technical Field
The invention relates to the field of amplifier drive control, in particular to an amplifier bias circuit with enable control.
Background
Gallium arsenide (GaAs) is a new generation wide bandgap semiconductor material, belonging to III-V group compound semiconductors, and has entered into practical use in 1964. Gallium arsenide can be made into semi-insulating high-resistance materials with resistivity higher than that of silicon and germanium by more than 3 orders of magnitude, and is used for manufacturing integrated circuit substrates, infrared detectors, gamma photon detectors and the like. The electron mobility of the material is 5-6 times higher than that of silicon, so that the material is applied to the aspects of manufacturing microwave devices and high-speed digital circuits. The semiconductor device made of gallium arsenide has the advantages of good high-frequency, high-temperature and low-temperature performances, low noise, strong radiation resistance and the like. There are mainly two types of transistor processes developed based on GaAs materials: field Effect Transistors (FETs) and Bipolar Junction Transistors (BJTs), the former being primarily represented by MESFETs and pHEMT and the latter being primarily represented by HBTs. The currently predominant GaAs processes are pHEMT and HBT.
Due to the characteristics of GaAs materials, generally, HBT processes produce only NPN transistors, but not PNP transistors. As shown in fig. 1, in an amplifier circuit using FET transistors, which can pull down the gate voltage of FET2 transistor to completely turn off the current of FET2 into a power-adjusted state through FET1 transistor, if the amplifier uses HBT transistor, the HBT1 transistor is also used to try to pull down the gate voltage of HBT2, as shown in fig. 2, because the HBT transistor is a current-controlled current-type device, there is junction voltage VBE and saturation conduction voltage VCE | SAT, so the HBT amplifier in fig. 2 cannot simply pull down the base voltage of HBT2 through HBT1 to completely turn off the current of HBT2 as in FET, but there is always a large bias current because the base voltage of HBT2 cannot be pulled down to 0. Therefore, the bias circuit based on the HBT amplifier cannot realize control turn-off through simple pull-down of the gate voltage, and the amplifier bias circuit with the enable control is designed for the HBT amplifier based on the HBT process.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an amplifier bias circuit with an enable control function, which is mainly used for realizing the drive control of an HBT amplifier.
In order to achieve the purpose, the invention adopts the technical scheme that: an amplifier bias circuit with enable control comprises an enable signal input circuit, a reference voltage input end, a transistor HBT3, a transistor HBT4, a transistor HBT5 and a transistor HBT6, wherein the enable signal input circuit is connected with a base electrode of HBT 3; a reference voltage input terminal VREF is connected to the collector of a transistor HBT3 through a resistor R5; the emitter of the transistor HBT3 is respectively connected with the collector of the transistor HBT4, the base of HBT4 and the base of the transistor HBT 6; the emitter of the transistor HBT4 is respectively connected with the collector and the base of HBT 5; the emitter of transistor HBT5 is connected to ground; the collector of transistor HBT6 is connected to reference voltage input VREF; the emitter terminal of transistor HBT6 is used to output a bias current to control the switching of the amplifier.
The enable input circuit comprises an enable input end EN and an inverter, an enable signal is sent to the inverter after passing through the enable input end EN, and the output end of the inverter is connected with the base electrode of the transistor HBT 3.
The inverter comprises two cascaded inverters.
The inverter comprises transistors HBT1 and HBT2, and an enable input end EN is connected with the base electrode of the transistor HBT1 through a resistor R1; power supply VCC is connected to the collector of HBT1 through resistor R3 and to the collector of HBT2 through resistor R4, respectively; the collector of HBT1 is connected to the base of HBT 2; the emitter of HBT1 is connected to ground through resistor R2; the emitter of HBT2 is grounded; the collector of HBT2 is connected to the base of HBT 3.
The base of the transistor HBT6 is connected to ground through resistor C1.
Controlling the output of bias current of an emitter of HBT6 by adjusting the high-low level of an enable input end EN, and controlling whether the amplifier works or not by the bias current; when the amplifier is in the working state, the output bias current of the amplifier is adjusted by the voltage of the reference voltage input end VREF.
The invention has the advantages that: the bias circuit has an enabling control function, can control the work of the bias circuit according to the control, can linearly adjust the bias current in a large range through a reference voltage end, and can be widely applied to various handheld devices, wireless communication terminals, radio frequency transceiver devices, 5G communication base stations and the like. The device has the advantages of simple structure, high switching speed, small transmission delay, strong anti-interference and anti-irradiation capabilities, linearly and continuously adjustable output current in a wider range and the like.
Drawings
The contents of the expressions in the various figures of the present specification and the labels in the figures are briefly described as follows:
FIG. 1 is a schematic diagram of a discharge circuit for an FET transistor turning off an amplifier by pulling down the gate voltage;
FIG. 2 is an amplifier and corresponding circuitry in FIG. 1 with the transistors replaced with HBT transistors;
FIG. 3 is a schematic diagram of the bias circuit of the present invention;
FIG. 4 is a diagram illustrating the enable signal EN and the currents in the circuit according to the present invention;
FIG. 5 is a schematic diagram of the reference voltage and the currents in the circuit according to the present invention.
Detailed Description
The following description of preferred embodiments of the invention will be made in further detail with reference to the accompanying drawings.
There are mainly two types of transistor processes developed based on GaAs materials: field Effect Transistor (FET) and bipolar transistor (BJT), the former mainly represents MESFET and pHEMT, the latter mainly represents HBT, as shown in figure 1, the amplifier realized by field effect transistor FET and its bias control circuit, the control circuit can realize the switch-off or switch-on by only using one FET1 to pull down the base voltage of FET2, and when the transistor is not FET but HBT transistor, i.e. bipolar transistor heterojunction bipolar transistor, as shown in figure 2, the FET is replaced by HBT transistor, this HBT1 is used as the bias control circuit for driving amplifier HBT2, but the HBT transistor is current control current type device, there is junction voltage VBEAnd saturated conduction voltage drop VCE|SATTherefore, when the HBT amplifier cannot be simply replaced by fig. 1, the bias drive control function of the HBT amplifier cannot be realized. Based on this, the present application provides a bias driving circuit that can drive an HBT amplifier for driving the operation of the HBT amplifier. The specific circuit is as follows:
as shown in FIG. 3, an amplifier bias circuit with enable control comprises an enable signal input circuitThe power supply circuit comprises a reference voltage input end, a transistor HBT3, a transistor HBT4, a transistor HBT5 and a transistor HBT6, wherein an enabling signal input circuit is connected with a base electrode of the HBT 3; a reference voltage input terminal VREF is connected to the collector of a transistor HBT3 through a resistor R5; the emitter of the transistor HBT3 is respectively connected with the collector of the transistor HBT4, the base of HBT4 and the base of the transistor HBT 6; the emitter of the transistor HBT4 is respectively connected with the collector and the base of HBT 5; the emitter of transistor HBT5 is connected to ground; the collector of transistor HBT6 is connected to reference voltage input VREF; emitter leading-out terminal of transistor HBT6 for outputting bias current IBIASTo control the operational state of the amplifier.
As shown in fig. 1, the amplifier circuit includes a transistor for realizing amplification control, the transistor is a transistor HBT7, and the right side in fig. 1 is an amplifier diagram, which is used as an example to describe the connection relationship between the amplifier and the bias circuit. The HBT7 emitter of the amplifier is grounded; the collector is connected with a power supply VCC through an inductor L1, the emitter current is an amplifier collector bias current ICC, and the collector leads out an output terminal RFOUT which is a radio frequency output terminal through a capacitor C3. The base is connected to the radio frequency input terminal RFIN through C2 and the base is connected to the output terminal BIAS of the BIAS circuit, i.e. the emitter of HBT 6.
The enable input circuit comprises an enable input end EN and an inverter, an enable signal is sent to the inverter after passing through the enable input end EN, and the output end of the inverter is connected with the base electrode of the transistor HBT 3.
The inverter comprises two cascaded inverters. The specific circuit comprises: the inverter comprises transistors HBT1 and HBT2, and an enable input end EN is connected with the base electrode of the transistor HBT1 through a resistor R1; power supply VCC is connected to the collector of HBT1 through resistor R3 and to the collector of HBT2 through resistor R4, respectively; the collector of HBT1 is connected to the base of HBT 2; the emitter of HBT1 is connected to ground through resistor R2; the emitter of HBT2 is grounded; the collector of HBT2 is connected to the base of HBT 3.
The phase inverter selects two cascading modes, on one hand, the enabling signal can play a role in shaping and balancing signal delay, on the other hand, EN can work for a high-control bias circuit through the inversion of logic level, EN does not work for a low-level circuit, so that high-low logic can better accord with the conventional understanding of people, and meanwhile, the shaping of EN input can be realized through secondary inversion, so that the threshold value is steeper, the EN numerical value jump is steeper as shown in fig. 4, and the driving enabling is more accurate.
The emitter of HBT1 is grounded through resistor R2, and negative feedback is formed, thereby avoiding the influence of excessive input current on HBT 1. The base of transistor HBT6 is connected to ground through resistor C1, providing filtering of the rf signal leaked from the amplifier to ground.
Controlling the output of bias current of an emitter of HBT6 by adjusting the high-low level of an enable input end EN, and controlling whether the amplifier works or not by the bias current; when the amplifier is in the working state, the output bias current of the amplifier is adjusted by the voltage of the reference voltage input end VREF.
The transistor HBT of the application is a bipolar transistor heterojunction bipolar transistor, and the working principle of a specific bias circuit is as follows:
when the voltage input by the EN terminal is low level, HBT1 is cut off, HBT2 provides bias current for HBT2 base electrode through R3 due to VCC, HBT2 is turned on to work and then pulls down HBT3 base electrode voltage, so that HBT3 is cut off, HBT4, HBT5 and HBT6 are cut off, HBT6 emitter output current I isBIASAt 0, HBT7 is off. When the EN input voltage is high, HBT1 turns on, HBT2 turns off, and the base of HBT3 turns on from VCC by providing a bias current through R4. VBEIs the junction voltage of the HBT transistor, when VREFVoltage greater than 2VBEThen HBT4, HBT5, and HBT6 all enter into working state and output current IBIASHBT7 can also be turned on.
The amplifier bias circuit with the enable control function is realized based on the GaAs HBT process, the bias current can be linearly adjusted in a large range through the reference voltage end, and the amplifier bias circuit can be widely applied to various handheld devices, wireless communication terminals, radio frequency transceiver devices, 5G communication base stations and the like. The device has the advantages of simple structure, high switching speed, small transmission delay, strong anti-interference and anti-irradiation capabilities, linearly and continuously adjustable output current in a wider range and the like.
The basic circuit principle is shown in fig. 3, the left side block part is the invention, the right side block part is a simple schematic diagram of an amplifier, and the left side block part and the right side block part form an HBT amplifier with adjustable bias current and enable control as a whole. VCC is the positive input terminal of the power supply; EN is an enable input end; VREF is a reference voltage input end; BIAS is a BIAS current output terminal which provides a proper BIAS current for the base of the amplifier; RFIN is the radio frequency input end of the schematic amplifier; RFOUT is the radio frequency output of the schematic amplifier.
The resistors R1, R2, R3 and the transistor HBT1 form an inverter, negative feedback is introduced into the emitter resistor R2, damage to the HBT1 caused by overlarge input current can be avoided, and technological parameters and temperature drift can be inhibited. R4 and HBT2 are again one-stage inverters to further shape the first stage inverter output to make the input-output voltage transfer curve steeper, thereby increasing the input logic level margin; the output of which is used to control the base of HBT 3. R5, HBT3, HBT4, HBT5, HBT6 and HBT7 form a proportional mirror constant current source, and the current flowing through HBT4 or HBT5 is IREF. HBT6 emitter output BIAS provides base BIAS current I to amplifierBIAS. The capacitor C1 provides an ac bypass to ground for the rf signal leaking from the amplifier, which can significantly improve the linearity of the amplifier and boost the OIP 3. By properly selecting the size ratio (generally, the base width of the transistor, etc.) of transistors HBT4/HBT5 and HBT6/HBT7, the amplifier operating current I can be adjustedCCAnd a reference current IREFThe proportional relationship of (c). When the ratio is fixed, V is adjustedREFCan linearly adjust ICC。
When EN is low level, HBT3 can not be conducted, the mirror constant current source does not work, and no bias current is outputBIASAmplifier HBT7 is also off, so 0; when EN is high, HBT3 is on, and VREF>2VBEThe time-mirror constant-current source starts to work normally and has a bias current output IBIAS>0, amplifier HBT7 begins to operate normally, current ICCAnd IREFIs in direct proportion.
In order to verify the equal working principle of the circuit of the present application, the verification can be performed by simulation, such as the figure4， VCC＝VREFBy dimensioning the transistor HBT to I5VREF:ICCThe EN input logic level threshold is set to about 1.5V at 1:100, as shown in fig. 4 when EN<At 1.5V, i.e. low level, the amplifier is not operated and the current I isCC＝IREF0; when EN>At 1.5V, the amplifier working current ICC＝100*IREF45 mA. Therefore, the circuit can effectively and reliably control the operation of the circuit according to EN.
As shown in FIG. 5, in this example verification, VCC＝5V，IREF:ICCScanning a reference voltage V from 0 to 5V at a ratio of 1:100REF. The working principle of the circuit can be verified in the figure, when the EN input is low level, the amplifier does not work, and the current I isCC＝IREF0; when the EN input is high level, the amplifier operates with current ICC＝100*IREFAnd at VREF＞2VBEApproximately equal to 1.6V, then follows VREFThe linearity increases.
It is clear that the specific implementation of the invention is not restricted to the above-described embodiments, but that various insubstantial modifications of the inventive process concept and technical solutions are within the scope of protection of the invention.

Claims (6)

1. An amplifier bias circuit with enable control, comprising: the circuit comprises an enabling signal input circuit, a reference voltage input end, a transistor HBT3, a transistor HBT4, a transistor HBT5 and a transistor HBT6, wherein the enabling signal input circuit is connected with a base electrode of HBT 3; a reference voltage input terminal VREF is connected to the collector of a transistor HBT3 through a resistor R5; the emitter of the transistor HBT3 is respectively connected with the collector of the transistor HBT4, the base of HBT4 and the base of the transistor HBT 6; the emitter of the transistor HBT4 is respectively connected with the collector and the base of HBT 5; the emitter of transistor HBT5 is connected to ground; the collector of transistor HBT6 is connected to reference voltage input VREF; the emitter terminal of transistor HBT6 is used to output a bias current to control the switching of the amplifier.
2. The amplifier bias circuit with enable control of claim 1, wherein: the enable input circuit comprises an enable input end EN and an inverter, an enable signal is sent to the inverter after passing through the enable input end EN, and the output end of the inverter is connected with the base electrode of the transistor HBT 3.
3. The amplifier bias circuit with enable control of claim 2, wherein: the inverter comprises two cascaded inverters.
4. An amplifier bias circuit with enable control as claimed in claim 2 or 3, wherein: the inverter comprises transistors HBT1 and HBT2, and an enable input end EN is connected with the base electrode of the transistor HBT1 through a resistor R1; power supply VCC is connected to the collector of HBT1 through resistor R3 and to the collector of HBT2 through resistor R4, respectively; the collector of HBT1 is connected to the base of HBT 2; the emitter of HBT1 is connected to ground through resistor R2; the emitter of HBT2 is grounded; the collector of HBT2 is connected to the base of HBT 3.
5. An amplifier bias circuit with enable control as claimed in any one of claims 1 to 3, wherein: the base of the transistor HBT6 is connected to ground through resistor C1.
6. An amplifier bias circuit with enable control as claimed in any one of claims 1 to 3, wherein: controlling the output of bias current of an emitter of HBT6 by adjusting the high-low level of an enable input end EN, and controlling whether the amplifier works or not by the bias current; when the amplifier is in the working state, the output bias current of the amplifier is adjusted by the voltage of the reference voltage input end VREF.
CN202110540675.5A 2021-05-18 2021-05-18 Amplifier bias circuit with enable control Pending CN113193841A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113783540A (en) * 2021-08-17 2021-12-10 深圳飞骧科技股份有限公司 Power amplifier circuit and bias circuit thereof
CN114636672A (en) * 2022-05-11 2022-06-17 之江实验室 Photoacoustic and ultrasonic multiplexing acquisition system and method
CN115051655A (en) * 2022-07-11 2022-09-13 广东工业大学 Radio frequency power amplifier biasing circuit and radio frequency power amplifier

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113783540A (en) * 2021-08-17 2021-12-10 深圳飞骧科技股份有限公司 Power amplifier circuit and bias circuit thereof
WO2023020094A1 (en) * 2021-08-17 2023-02-23 深圳飞骧科技股份有限公司 Power amplifier circuit and bias circuit thereof
CN114636672A (en) * 2022-05-11 2022-06-17 之江实验室 Photoacoustic and ultrasonic multiplexing acquisition system and method
CN115051655A (en) * 2022-07-11 2022-09-13 广东工业大学 Radio frequency power amplifier biasing circuit and radio frequency power amplifier

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