CN113161856B - 1.6 mu m injection locking solid laser based on bipyramid resonant cavity and generation method - Google Patents
1.6 mu m injection locking solid laser based on bipyramid resonant cavity and generation method Download PDFInfo
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
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- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
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- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/117—Q-switching using intracavity acousto-optic devices
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Abstract
The invention relates to a 1.6 mu m injection locking solid laser and a generating method based on a bipyramid resonant cavity, seed laser is provided by a non-planar annular cavity, a resonant cavity is formed by two pyramid prisms, the stability of the bipyramid laser is compensated by adopting a compensating lens, an acousto-optic Q switch is adopted as a Q-switching element, the output power of the bipyramid laser is adjusted by a half wave plate, the cavity length of the bipyramid laser is adjusted by a bipyramid mirror adhered with piezoelectric ceramics, the resonant frequency of the bipyramid laser is matched with the resonant frequency of 1.6 mu m single-frequency continuous seed laser, a resonant signal is fed back to a control circuit by an InGaAs detector, and the control circuit controls the acousto-optic Q switch to complete seed light injection, thereby realizing single-frequency high-energy 1.6 mu m pulse laser output. The invention adopts the bipyramid laser to carry out injection locking, and enhances the stability of the resonant cavity by utilizing the reflection characteristic of the pyramid prism, thereby avoiding being interfered by environment.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a 1.6 mu m injection locking solid laser based on a bipyramid resonant cavity and a generation method thereof.
Background
Since the 1.6 μm laser is located in the atmospheric transmission window, and its receiving device is well developed, the human eye safety threshold is 10 times higher than that of the 2 μm laser. Therefore, the single-frequency high-energy 1.6 mu m pulse laser has extremely important application in the fields of coherent Doppler wind-finding radar, differential absorption laser radar, laser imaging radar and the like.
At present, the single-frequency and high-energy pulse laser output is realized mainly by adopting an injection locking technology. The working principle of the injection locking technology is that seed laser with single frequency and narrow linewidth is injected into a slave laser with higher output power, so that the laser with narrow linewidth and high power is output, and the injection locking technology is suitable for coherent laser radar application.
However, due to the influence of vibration, environmental temperature change, air interference and other factors, the slave laser is extremely easy to generate detuning, the detuning can obviously influence the stable operation of the slave laser, the main reason of the detuning of the slave laser is that the intracavity oscillation light deviates out of the cavity due to the modulation influence of the inclination angle of the normal line of the cavity mirror, and the output mode of the laser is unstable and the output energy is reduced as long as the detuning angle of the cavity mirror reaches the order of magnitude of an angle second, so that the 1.6 mu m single-frequency pulse laser cannot stably work in various applications for a long time. Therefore, how to improve the anti-detuning capability of the 1.6 μm single-frequency solid-state laser becomes a research focus for realizing the engineering application of the single-frequency 1.6 μm laser.
Disclosure of Invention
The invention aims to improve the anti-detuning capability of a single-frequency high-energy 1.6 mu m solid laser. The invention provides a 1.6 mu m injection locking solid laser based on a bipyramid resonant cavity, which has the characteristics of single frequency, high energy, strong anti-detuning capability, long-time stable operation and the like.
The invention is realized by the following technical scheme:
1.6 mu m injection locking solid laser based on bipyramid resonant cavity comprises a 1.6 mu m single-frequency continuous seed laser source, a bipyramid laser, an InGaAs detector and a control circuit;
the bipyramid laser includes: a bipyramid laser pump source; the bottom surface of the ring-shaped resonant cavity is formed by a first pyramid prism and a second pyramid prism which are oppositely arranged in parallel, two parallel light paths are arranged in the ring-shaped resonant cavity, the first light path sequentially comprises a half wave plate, a first polaroid, an Er-YAG crystal and a second polaroid, and the first polaroid and the second polaroid are inclined at 45 degrees in a symmetrical mode; the second light path sequentially comprises an acousto-optic Q switch, a compensation lens, a double wedge mirror and a resonance signal taking mirror;
the light path emitted by the pumping source of the bipyramid laser is perpendicular to the first light path in the annular resonant cavity, and is incident to the first polaroid and reflected to the center of the Er YAG crystal by the first polaroid;
the double wedge mirror is provided with piezoelectric ceramics; an InGaAs detector is arranged on a reflection light path of the resonance signal mirror; the InGaAs detector is connected with the control circuit, and the control circuit is respectively connected with the piezoelectric ceramics and the acousto-optic Q switch in a control way;
a 1.6 μm single frequency continuous seed laser source is obtained using a non-planar annular cavity (NPRO) structure, injected into the first polarizer of the bipyramid laser via mirror 14.
The first polaroid faces to one side of the Er YAG crystal, the film system on the front is high in reflection of 1.5 mu m pump light and high in transmission of 1.6 mu m output laser, the film system on the back is high in reflection of 1.6 mu m vertical polarized light and high in transmission of 1.6 mu m horizontal polarized light; the light path emitted by the bipyramid laser pumping source is incident to the front surface of the first polaroid, and the light path of the 1.6 mu m single-frequency continuous seed laser source enters the back surface of the first polaroid; the coating parameters of the second polaroid are symmetrical to those of the first polaroid.
The length of the Er YAG crystal is 40mm, the cross section size is 1.7 x 5.5mm, the crystal doping concentration is 0.5%, and the two ends of the Er YAG crystal are plated with high-permeability films with the diameters of 1.5 mu m and 1.6 mu m.
The radio frequency power of the acousto-optic Q switch is 20W, and the material is fused quartz.
The first pyramid prism and the second pyramid prism have the same structure, the diameter is 40mm, the height is 35mm, the material is fused quartz, and the incident surface is plated with high-permeability films of 1.5 mu m and 1.6 mu m.
According to the generation method of the 1.6 mu m injection locking solid laser based on the bipyramid resonant cavity, the non-planar annular cavity (NPRO) is used for providing seed laser, the two pyramid prisms are used for forming the resonant cavity, the compensation lens is used for compensating the stability of the bipyramid laser, the acousto-optic Q switch is used as a Q-switching element, the half wave plate is used for adjusting the output power of the bipyramid laser, the bipyramid laser cavity length is adjusted by the bipyramid mirror adhered with piezoelectric ceramics, the resonance frequency of the 1.6 mu m single-frequency continuous seed laser is matched, the resonance signal is fed back to the control circuit by the InGaAs detector, and the control circuit is used for controlling the acousto-optic Q switch to complete seed light injection, so that the single-frequency high-energy 1.6 mu m pulse laser output is realized.
The specific generation method is that the light emitted by the pumping source of the bipyramid laser is incident to the first polaroid and reflected by the first polaroid, and the light emitted by the pumping source of the bipyramid laser is reflected to the center of the Er YAG crystal; YAG crystal generates 1645nm laser with opposite directions at two ends under the pumping of a bipyramid laser pumping source, and the two 1645nm lasers are both on a first optical path in the annular resonant cavity and respectively incident to a first polaroid and a second polaroid;
under the injection of a 1.6 mu m single-frequency continuous seed laser source, a 1.6 mu m single-frequency continuous seed laser mode in the bipyramid laser is dominant, and the bipyramid laser realizes unidirectional 1645nm laser operation in the same direction as the 1.6 mu m single-frequency continuous seed laser operation, namely the direction of incidence to the first polaroid; the 1645nm laser which is incident to the first polaroid and runs in the direction is transmitted to a half wave plate through the first polaroid, and the half wave plate is used for adjusting the power of the injected 1.6 mu m single-frequency continuous seed laser and adjusting the output power of the bipyramid laser; the light reaches a first angular cone prism after being regulated by a half wave plate, and three times of total reflection are carried out in the first angular cone prism; the light enters a second optical path in the ring resonant cavity after total reflection, and firstly reaches an acousto-optic Q switch, wherein the acousto-optic Q switch has the function of being matched with the opening and the closing of a 1.6 mu m single-frequency continuous seed laser source signal to realize the output of single-frequency pulse light after injection locking; after the 1645nm laser is transmitted through the acousto-optic Q switch, the laser is transmitted through the compensation lens, and the function of the compensation lens is to ensure the stable operation of the bipyramid laser; the piezoelectric ceramic is driven by a sawtooth voltage with periodic variation through transmission of a double wedge mirror adhered with the piezoelectric ceramic, so that the thickness of the piezoelectric ceramic is periodically changed, the cavity length of the bipyramid laser is periodically changed, the inherent frequency of the bipyramid laser is periodically changed, when the frequency of the injected 1.6 mu m single-frequency continuous seed laser is identical to the inherent frequency of the bipyramid laser, interference occurs between the two lasers, an interference signal is reflected by a resonance signal mirror and enters an InGaAs detector, and then the InGaAs detector is fed back to a control circuit, and the control circuit controls the acousto-optic Q switch to work; after being reflected by the second pyramid prism, the laser enters a first optical path in the ring resonant cavity, and then is reflected by the second polaroid to realize single-frequency and high-energy laser output.
The bipyramid laser can effectively avoid resonance cavity detuning caused by vibration, environmental interference and other factors, thereby affecting the stable operation of the resonance cavity. Because the laser which is incident to the pyramid prism at any angle in space can be reversely output by parallel incident light, no matter what detuning happens to the pyramid prism, the oscillating light path in the resonant cavity is always unchanged, the mode volume of the laser is not changed, and no influence is caused to output laser.
The beneficial effects of the invention are as follows:
the invention adopts the bipyramid laser to carry out injection locking, and enhances the stability of the resonant cavity by utilizing the reflection characteristic of the pyramid prism, thereby avoiding being interfered by environment.
Drawings
Fig. 1 is a schematic structural view of the present invention.
FIG. 2 is a schematic representation of three total reflections of 1645 μm laser light within a corner cube.
Detailed Description
The specific technical scheme of the invention is described with reference to the accompanying drawings and the embodiments.
As shown in fig. 1, a 1.6 μm injection locking solid state laser based on a bipyramid resonant cavity comprises a 1.6 μm single frequency continuous seed laser source 15, a bipyramid laser, an InGaAs detector 8 and a control circuit 9;
the bipyramid laser includes: a bipyramid laser pump source 16; the bottom surface of the ring-shaped resonant cavity is formed by a first pyramid prism 1 and a second pyramid prism 2 which are arranged in parallel and opposite to each other, two parallel light paths are arranged in the ring-shaped resonant cavity, and the first light path sequentially comprises a half wave plate 3, a first polaroid 4 and Er, wherein the first polaroid 4 and the second polaroid 6 are symmetrically inclined by 45 degrees; the second light path sequentially comprises an acousto-optic Q switch 13, a compensation lens 12, a double wedge mirror 10 and a resonance signal taking mirror 7;
the light path emitted by the bipyramid laser pumping source 16 is vertical to the first light path in the annular resonant cavity, and is incident to the first polaroid 4 and reflected to the center of the Er-YAG crystal 5 through the first polaroid 4;
the double wedge mirror 10 is provided with a piezoelectric ceramic (PZT) 11; an InGaAs detector 8 is arranged on the reflection light path of the resonance signal mirror 7; the InGaAs detector 8 is connected with the control circuit 9, and the control circuit 9 is respectively connected with the piezoelectric ceramics (PZT) 11 and the acousto-optic Q switch 13 in a control manner;
a 1.6 μm single frequency continuous seed laser source 15 is obtained using a non-planar annular cavity (NPRO) structure, injected into the first polarizer 4 of the bipyramid laser via mirror 14.
The first polaroid 4 faces Er, YAG crystal 5 one side is front, the film system of front is highly reflecting to 1.5 mu m pump light and highly transmitting to 1.6 mu m output laser, the other side of the first polaroid 4 is back, the film system of back is highly reflecting to 1.6 mu m vertical polarized light and highly transmitting to 1.6 mu m horizontal polarized light; the light path emitted by the bipyramid laser pumping source 16 is incident to the front surface of the first polaroid 4, and the light path of the 1.6 mu m single-frequency continuous seed laser source 15 enters the back surface of the first polaroid 4; the coating parameters of the second polarizer 6 are symmetrical to those of the first polarizer 4.
The length of the Er YAG crystal 5 is 40mm, the cross section size is 1.7 x 5.5mm, the crystal doping concentration is 0.5%, and the two ends of the Er YAG crystal 5 are plated with high-permeability films of 1.5 mu m and 1.6 mu m.
The radio frequency power of the acousto-optic Q switch 13 is 20W, and the material is fused quartz.
The first pyramid prism 1 and the second pyramid prism 2 have the same structure, the diameter is 40mm, the height is 35mm, the material is 'kangning 7979' fused quartz, and the incident surface is plated with high-permeability films of 1.5 mu m and 1.6 mu m.
A generation method of a 1.6 mu m injection locking solid laser based on a bipyramid resonant cavity is characterized in that a non-planar annular cavity (NPRO) provides seed laser, a resonant cavity is formed by two pyramid prisms, the stability of the bipyramid laser is compensated by adopting a compensation lens, an acousto-optic Q switch 13 is adopted as a Q-switching element, the output power of the bipyramid laser is adjusted by a half wave plate 3, the cavity length of the bipyramid laser is adjusted by a bipyramid lens 10 adhered with a piezoelectric ceramic (PZT) 11, the resonance frequency of the bipyramid laser is matched with the resonance frequency of 1.6 mu m single-frequency continuous seed laser, a resonance signal is fed back to a control circuit 9 by an InGaAs detector 8, and the control circuit 9 controls an acousto-optic Q switch 13 to complete seed laser injection, so that single-frequency high-energy 1.6 mu m pulse laser output is realized.
Wherein the seed laser is a 1.6 mu m single-frequency continuous seed laser source 15, and the slave laser is a bipyramid laser.
As shown in fig. 1, the light path a direction of the dihedral corner laser pump source 16 is incident on the first polarizer 4 at an angle of 45 °, and the first polarizer 4 reflects the dihedral corner laser pump source to the center of the Er: YAG crystal 5. The second polaroid 6 reflects the unabsorbed pumping light of the YAG crystal 5 out of the cavity, the coating parameters of the second polaroid 6 are the same as those of the first polaroid 4, the YAG crystal 5 generates laser with the wavelength of 1645nm under the pumping of the pumping source of the bipyramid laser, the laser is oscillated simultaneously in the directions of b and c, and under the light path injection of the 1.6 mu m single-frequency continuous seed laser source 15 generated by the non-planar annular cavity (NPRO), the single-frequency continuous seed laser mode in the bipyramid laser is dominant, so that the bipyramid laser realizes the laser operation in the direction of b identical with the operation direction of the 1.6 mu m single-frequency continuous seed laser.
The 1645nm laser generated by the bipyramid laser is transmitted to the half wave plate 3 through the first polaroid 4, and the power of the injected 1.6 mu m single-frequency continuous seed laser source 15 is adjusted and the output power of the resonant cavity is changed by adjusting the included angle between the half wave plate 3 and the optical axis; the 1645nm laser generated by the bipyramid laser is transmitted by the half wave plate 3, the emergent light reaches the first angular cone prism 1, and the emergent light reaches the acousto-optic Q switch after three times of total reflection in the first angular cone prism 1, and the three times of total reflection schematic diagram is shown in figure 2.
The laser with the wavelength of 1645nm reaches the compensation lens 12 after being transmitted by the acousto-optic Q switch, the focal length of the compensation lens 12 is 100mm, and the compensation lens 12 is symmetrically arranged with the Er-YAG crystal 5 about the resonant cavity, and the function of the compensation lens 12 is to ensure the stable operation of the bipyramid laser; the double wedge mirror 10 adhered with piezoelectric ceramics (PZT) 11 is used to control the change of the cavity length of the bipyramid laser, so that the bipyramid laser has a periodically changing resonant frequency, when the resonant frequency of the bipyramid laser is the same as the frequency of the injected 1.6 μm single-frequency continuous seed laser, the bipyramid laser obtains a frequency locking signal, the frequency locking signal is detected by the InGaAs detector 8 after being reflected by the resonant signal mirror 7, the InGaAs detector 8 is connected with an analog signal amplifier to amplify the frequency locking signal, and then the amplified voltage signal is input to a comparator in the control circuit 9, and when the detected voltage signal is larger than the comparison level, the acousto-optic Q switch 13 is opened, so that single-frequency high-energy pulse laser is output.
Claims (5)
1. 1.6 mu m injection locking solid laser based on a bipyramid resonant cavity is characterized by comprising a 1.6 mu m single-frequency continuous seed laser source (15), a bipyramid laser, an InGaAs detector (8) and a control circuit (9);
the bipyramid laser includes: a bipyramid laser pump source (16); the ring-shaped resonant cavity is formed by a first pyramid prism (1) and a second pyramid prism (2) which are arranged in parallel and opposite to each other on the bottom surface, two parallel light paths are arranged in the ring-shaped resonant cavity, a half wave plate (3), a first polaroid (4), an Er-YAG crystal (5) and a second polaroid (6) are sequentially arranged on the first light path, and the first polaroid (4) and the second polaroid (6) are inclined 45 degrees symmetrically; the second light path sequentially comprises an acousto-optic Q switch (13), a compensation lens (12), a double wedge mirror (10) and a resonance signal taking mirror (7);
light emitted by the bipyramid laser pumping source (16) is perpendicular to a first light path in the annular resonant cavity, and is incident to the first polaroid (4) and reflected to the center of the Er-YAG crystal (5) through the first polaroid (4);
the double wedge mirror (10) is provided with piezoelectric ceramics (11); an InGaAs detector (8) is arranged on the reflection light path of the resonance signal mirror (7); the InGaAs detector (8) is connected with the control circuit (9), and the control circuit (9) is respectively connected with the piezoelectric ceramics (11) and the acousto-optic Q switch (13) in a control manner;
a 1.6 mu m single-frequency continuous seed laser source (15) is obtained by adopting a non-planar annular cavity structure, and is injected into a first polaroid (4) of the bipyramid laser through a reflecting mirror (14);
YAG crystal (5) one side of the first polaroid (4) is the front, the film system on the front is high-reflection to 1.5 mu m pump light and high-transmission to 1.6 mu m output laser, the film system on the back is high-reflection to 1.6 mu m vertical polarized light and high-transmission to 1.6 mu m horizontal polarized light; light emitted by the bipyramid laser pumping source (16) is incident to the front surface of the first polaroid (4), and light of the 1.6 mu m single-frequency continuous seed laser source (15) enters the back surface of the first polaroid (4); the coating parameters of the second polaroid (6) are symmetrical to those of the first polaroid (4);
the length of the Er-YAG crystal (5) is 40mm, the cross section size is 1.7 x 5.5mm, the crystal doping concentration is 0.5%, and the two ends of the Er-YAG crystal (5) are plated with high-permeability films of 1.5 mu m and 1.6 mu m.
2. The 1.6 μm injection locking solid state laser based on the bipyramid resonator according to claim 1, wherein the radio frequency power of the acousto-optic Q-switch (13) is 20W, and the material is fused silica.
3. The 1.6 μm injection locking solid laser based on the bipyramid resonant cavity according to claim 1, wherein the first angular pyramid prism (1) and the second angular pyramid prism (2) have the same structure, the diameter is 40mm, the height is 35mm, the material is fused quartz, and the incident surface is plated with high-permeability films for 1.5 μm and 1.6 μm.
4. A method of generating a 1.6 μm injection-locked solid-state laser based on a bipyramid cavity according to any one of claims 1 to 3, comprising the steps of: the seed laser is provided by a non-planar annular cavity, a resonant cavity is formed by two pyramid prisms, the stability of the bipyramid laser is compensated by adopting a compensation lens, an acousto-optic Q switch (13) is adopted as a Q-switching element, the output power of the bipyramid laser is adjusted by a half wave plate (3), the cavity length of the bipyramid laser is adjusted by adopting a bipyramid mirror (10) adhered with piezoelectric ceramics (11), the resonant frequency of the bipyramid laser is matched with the resonant frequency of 1.6 mu m single-frequency continuous seed laser, a resonant signal is fed back to a control circuit (9) by an InGaAs detector (8), and the control circuit (9) controls the acousto-optic Q switch (13) to finish seed light injection, so that single-frequency high-energy 1.6 mu m pulse laser output is realized.
5. The method for generating the 1.6 μm injection locking solid laser based on the bipyramid resonant cavity according to claim 4, which is characterized by comprising the following steps: light emitted by the bipyramid laser pumping source (16) is incident to the first polaroid (4), reflected by the first polaroid (4), and light emitted by the bipyramid laser pumping source (16) is reflected to the center of the Er YAG crystal (5); YAG crystal (5) is pumped by a bipyramid laser pumping source (16), two ends of the YAG crystal respectively generate 1645nm lasers with opposite directions, and the two 1645nm lasers are both on a first optical path in the annular resonant cavity and respectively incident to a first polaroid (4) and a second polaroid (6);
under the injection of a 1.6 mu m single-frequency continuous seed laser source (15), a 1.6 mu m single-frequency continuous seed laser mode in the bipyramid laser is dominant, and the bipyramid laser realizes unidirectional 1645nm laser operation in the same direction as the 1.6 mu m single-frequency continuous seed laser operation, namely the direction of incidence to the first polaroid (4); the 1645nm laser which is incident to the first polaroid (4) and runs in the direction is transmitted to the half wave plate (3) through the first polaroid (4), and the half wave plate (3) is used for adjusting the power of the injected 1.6 mu m single-frequency continuous seed laser and adjusting the output power of the bipyramid laser; after being regulated by the half wave plate (3), the light reaches the first angular cone prism (1), and three times of total reflection are carried out in the first angular cone prism (1);
the light enters a second optical path in the ring resonant cavity after total reflection, firstly reaches an acousto-optic Q switch (13), and the acousto-optic Q switch (13) is used for matching with the opening and closing of a signal of a 1.6 mu m single-frequency continuous seed laser source (15) to realize the output of single-frequency pulse light after injection locking; after the 1645nm laser is transmitted through the acousto-optic Q switch (13), the laser is transmitted through the compensating lens (12), and the compensating lens (12) is used for ensuring the stable operation of the bipyramid laser; then the laser is transmitted through a double wedge mirror (10) adhered with piezoelectric ceramics (11), the piezoelectric ceramics (11) are driven by the periodic variation sawtooth voltage, so that the thickness of the piezoelectric ceramics (11) is periodically changed, the periodic change of the cavity length of the bipyramid laser is realized, the inherent frequency of the bipyramid laser is caused to be periodically changed, when the frequency of the injected 1.6 mu m single-frequency continuous seed laser is the same as the inherent frequency of the bipyramid laser, the two are interfered, an interference signal is reflected by a resonance signal taking mirror (7) and enters an InGaAs detector (8), and is further fed back to a control circuit (9), and the control circuit (9) controls an acousto-optic Q switch (13) to work; after being reflected by the second pyramid prism (2), the laser enters a first optical path in the ring resonant cavity, and then is reflected by the second polaroid (6) to realize single-frequency and high-energy laser output.
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| CN105119139A (en) * | 2015-09-25 | 2015-12-02 | 哈尔滨工业大学 | Tunable single longitudinal mode 2[mu]m solid laser based on bipyramid resonant cavity |
| CN105244748A (en) * | 2015-10-15 | 2016-01-13 | 哈尔滨工业大学 | Cube-corner prism-based unidirectional traveling wave annular 2micron solid laser device |
| CN110224288A (en) * | 2019-07-04 | 2019-09-10 | 南京信息工程大学 | A kind of 2 based on pyramid chamber μm Gao Zhongying tunable single frequency solid state laser device |
| CN110289542A (en) * | 2019-07-04 | 2019-09-27 | 南京信息工程大学 | A kind of 2 based on pyramid annular chamber μm Gao Zhongying injection frequency locking laser |
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| CN105119139A (en) * | 2015-09-25 | 2015-12-02 | 哈尔滨工业大学 | Tunable single longitudinal mode 2[mu]m solid laser based on bipyramid resonant cavity |
| CN105244748A (en) * | 2015-10-15 | 2016-01-13 | 哈尔滨工业大学 | Cube-corner prism-based unidirectional traveling wave annular 2micron solid laser device |
| CN110224288A (en) * | 2019-07-04 | 2019-09-10 | 南京信息工程大学 | A kind of 2 based on pyramid chamber μm Gao Zhongying tunable single frequency solid state laser device |
| CN110289542A (en) * | 2019-07-04 | 2019-09-27 | 南京信息工程大学 | A kind of 2 based on pyramid annular chamber μm Gao Zhongying injection frequency locking laser |
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