CN113161852A - Tunable external cavity semiconductor laser and adjusting method - Google Patents
Tunable external cavity semiconductor laser and adjusting method Download PDFInfo
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- CN113161852A CN113161852A CN202110371780.0A CN202110371780A CN113161852A CN 113161852 A CN113161852 A CN 113161852A CN 202110371780 A CN202110371780 A CN 202110371780A CN 113161852 A CN113161852 A CN 113161852A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 19
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 11
- 239000010935 stainless steel Substances 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 abstract description 2
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- 230000006835 compression Effects 0.000 description 1
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- 238000001125 extrusion Methods 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 150000002978 peroxides Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a tunable external cavity semiconductor laser and a regulating method. In the laser, a laser diode (6) is fixed on a laser diode mounting seat (7) through a laser diode pressing block (12), and a light emitting point of the laser diode (6) is positioned at the focus of an aspheric lens (8); the laser diode mounting seat (7) is fixed on the base (9); the grating seat (10) is fixed on the base (9), the middle part of the grating seat (10) is provided with an adjustable part (21), and the adjustable part (21) is connected with the grating seat (10) through a hinge; the grating (14) and the reflector (13) are arranged in the adjustable part (21), one end of the piezoelectric ceramic (15) is connected to the outside of the adjustable part (21), and the other end of the piezoelectric ceramic is connected to the stainless steel plate (16); the precise adjusting screw (17) is arranged on the grating seat (10), and one end of the precise adjusting screw (17) is contacted with the stainless steel plate (16).
Description
Technical Field
The invention belongs to the technical field of laser, and relates to a tunable external cavity semiconductor laser and an adjusting method.
Background
The external cavity semiconductor laser has the advantages of wide tunable range, narrow line width, large wavelength coverage range and the like, and is widely applied to the fields of atomic physics, quantum precision measurement and the like. The external cavity extends the laser resonant cavity to the outside of the laser diode, external light oscillation is realized by using an optical feedback element, the cavity length is far longer than the internal cavity formed by the front end surface and the rear end surface of the laser diode, and the laser line width is greatly squeezed. The external cavity semiconductor laser widely adopts a Littrow structure, utilizes the characteristic of blazed grating, the primary diffraction light path returns to form an external cavity with the end face of the laser diode, and the grating is also used as a frequency selection device of the laser. The length of the external cavity and the frequency-selecting wave band of the laser can be changed by rotating the grating.
Chinese patent application No. 201910300590.2 discloses a grating external cavity feedback semiconductor laser and its adjusting method; wherein the adjustment range of the grating is derived from the compression and rebound of the rubber gasket. This approach has two disadvantages: firstly, the rubber pad changes in the horizontal and vertical directions simultaneously during adjustment, so that the laser power output is unstable during frequency adjustment and scanning; secondly, in order to ensure that the grating is adjustable in both directions, the rubber needs to be kept in a compressed state all the time, so that two adjustable directions can be provided through extrusion and relaxation. And when the rubber pad is always under pressure, the service life and consistency of the rubber pad can be influenced.
The german patent application with application number DE 102007028499.5 discloses a solution entitled "abscommbars Diodenlasersystem mit externem receiver" in which there is no tight fixation between the grating holder and the base, which reduces the stability of the system.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention aims to provide a tunable external cavity semiconductor laser and a regulating method.
The technical scheme of the invention is as follows:
a tunable external cavity semiconductor laser is characterized by comprising a laser shell, a laser diode 6, a laser diode mounting seat 7, an aspheric lens 8, a base 9 and a grating seat 10, wherein the laser diode 6, the laser diode mounting seat 7, the aspheric lens 8, the base 9 and the grating seat are positioned in the laser shell; wherein,
a window mounting hole is processed on the front cover plate 3 of the laser shell and used for mounting a window matched with the wave band of the laser; the laser diode 6 is fixed on the laser diode mounting seat 7 through a laser diode pressing block 12, and the light emitting point of the laser diode 6 is positioned at the focus of the aspheric lens 8; the laser diode mounting seat 7 is fixed on the base 9;
the grating seat 10 is fixed on the base 9, the middle part of the grating seat 10 is provided with an adjustable part 21, and the adjustable part 21 is connected with the grating seat 10 through a hinge; the grating 14 and the reflector 13 are arranged inside the adjustable part 21, one end of the piezoelectric ceramic 15 is connected to the outside of the adjustable part 21, and the other end is connected to the stainless steel plate 16; a precision adjusting screw 17 is arranged on the grating seat 10, one end of the precision adjusting screw 17 is in contact with the stainless steel plate 16 and is used for applying external force to the adjustable part 21 by adjusting the precision adjusting screw 17 to enable the adjustable part to rotate, and precision adjustment of a horizontal included angle between laser and the grating 14 is realized; the piezoelectric ceramic 15 is used for periodically changing the angle of the grating 14 to realize the periodic scanning of the laser frequency;
two light through holes are processed on the base 9 and used for enabling laser output by the aspheric lens 8 to enter the grating 14 through the first light through hole, and light diffracted by the grating 14 is output through the reflector 13 and the second light through hole.
Further, the lens 8 and the diode mounting base 7 are mounted together through threads, and the distance between the aspheric lens 8 and the laser diode 6 is adjusted through rotating the aspheric lens 8 under the action of the threads.
Further, the laser diode mount 7 is fixed to the base 9 through a through hole 901 of the base 9.
Furthermore, a through hole 19 is formed in the grating seat 10, a threaded hole 18 is formed in the base 9, and the grating seat 10 and the base 9 are fixed by passing a screw through the through hole 19 and the threaded hole 18.
Further, a groove 902 for placing the grating seat 10 is processed in the base 9; the grating seat 10 is a partial cylinder, the outer diameter of the grating seat 10 is the same as the inner diameter of the groove 902, and the grating seat 10 can rotate around the axis in the groove 902, so that the horizontal included angle between the laser and the grating 14 can be changed by rotating the grating seat 10, and the laser frequency can be changed.
Further, the grating 14 is parallel to the surface of the reflector 13, and is used for ensuring that the propagation direction of the laser light is not changed when the grating seat 10 rotates.
Furthermore, the contact end of the precision adjusting screw 17 and the stainless steel plate 16 is a ball head.
Further, a semiconductor refrigerator 5 and a thermistor 22 are arranged in the laser shell, a 7W2 interface is arranged on a rear cover plate 4 of the laser shell, and leads of the semiconductor refrigerator 5, the laser diode 6, the thermistor 22 and the piezoelectric ceramic 15 are respectively connected with the control cabinet through 7W2 interfaces.
A method for adjusting a tunable external cavity semiconductor laser comprises the following steps:
1) after the laser diode 6 emits light through the control box, the aspheric lens 8 is rotated to change the distance between the laser diode 6 and the aspheric lens 8 until the light emitting point of the laser diode 6 is positioned on the focal plane of the aspheric lens 8, and parallel light is output;
2) the left and right positions of the laser diode mounting seat 7 relative to the optical axis of the aspheric lens 8 are adjusted until the shapes of light spots emitted by the laser diode 6 are symmetrical left and right;
3) rotating the grating seat 10, primarily finding a working point through the power change of laser emitted by the laser diode 6, and then fixing the grating seat 10 and the base 9 together;
4) rotating the laser diode mounting seat 7 until the laser power emitted by the laser diode 6 reaches the maximum value; then fixing the laser diode mounting seat 7 and the base 9 together;
5) by controlling the cavity length of the case to periodically scan the piezoelectric ceramics 15, and detecting the frequency of the laser, the precise adjustment screw 17 is modulated to precisely adjust the angle between the grating 14 and the light until the frequency of the laser is not periodically tuned at the target frequency.
Compared with the prior art, the invention has the following positive effects:
the laser diode is connected with the base through two screws, so that the structure is simple and the adjustment is convenient. The connection between the grating and the base is a screw and a metal hinge, so that the structure is stable, and the anti-interference capability of the system is improved.
The grating seat is of a non-integral cylindrical structure and is of a partial cylindrical structure, rotation of the grating seat within a certain angle relative to the base is guaranteed, the integral size is reduced while the angle of the grating and the angle of light are changed, and the stability of the system is improved.
Drawings
FIG. 1 is a block diagram of the system of the present invention;
FIG. 2 is a schematic view of a laser diode mounting;
FIG. 3 is a schematic view of a base;
FIG. 4 is a schematic view of the grating mount assembly;
fig. 5 is a schematic illustration of laser propagation.
Detailed Description
The detailed process flow of the present invention is further described below:
as shown in fig. 1, the whole system of the present invention includes a top cover plate 1, a bottom plate 2, a front cover plate 3, a rear cover plate 4, a semiconductor refrigerator 5, a laser diode 6, a laser diode mounting base 7, an aspheric lens 8, a base 9, a grating base 10, and a cover plate 11.
As shown in fig. 2, the laser diode 6 is assembled schematically, and includes a laser diode 6, a laser diode mount 7, an aspheric lens 8, a laser diode compact 12, and a thermistor 22. The laser diode 6 is fixed on the laser diode mounting base 7 through a laser diode pressing block 12. The lens 8 and the diode mount 7 are screw-mounted together. After the laser diode 6 is installed, the distance between the lens 8 and the laser diode 6 can be adjusted by rotating the lens 8 under the action of the screw thread. The laser emitted by the laser diode 6 is divergent laser, and when the light emitting point of the laser diode 6 is at the focus of the aspheric lens 8, the laser is shaped into parallel light.
The base is schematically shown in fig. 3, which includes a light-passing hole 20 processed to ensure smooth propagation of laser light. A through hole 901 for fixing the laser diode mounting base 7, a groove 902 for fixing the grating base 10 and a threaded hole 18.
As shown in fig. 4, the grating mount 10 is assembled. An adjustable part 21 is processed in the middle of the grating seat 10 by a wire cutting processing mode and is connected with the grating seat 10 through a hinge. The grating 14 and the reflector 13 are bonded inside the adjustable part 21 through peroxide resin adhesive, one end of the piezoelectric ceramic 15 is bonded outside the adjustable part 21, and the other end is bonded on the stainless steel plate 16. The precision adjusting screw 17 is fixed on the grating seat 10, and the contact end of the precision adjusting screw 17 and the stainless steel plate 16 is a ball head, so that the clamping during adjustment can be avoided. The ball head is point contact, and the contact area between the stainless steel plate 16 and the piezoelectric ceramic 15 can be increased, so that the pressure intensity is reduced. The adjustable part 21 can be rotated by applying external force by adjusting the precise adjusting screw 17, so as to realize precise adjustment of the horizontal included angle between the laser and the grating 14. The scanning piezoelectric ceramic 15 changes the angle of the grating 14 periodically, and realizes the periodic scanning of the laser frequency.
Fig. 5 is a schematic view showing laser propagation. The laser diode mount 7 and the base 9 are assembled together through the screw holes 702 and the through holes 901 on the side surfaces. The screws on two sides all give 7 lateral tension of laser diode mount pad until the pulling force is balanced in the assembling process, through changing both sides pressure size to 9 both sides through-holes of base are interference fit with the screw, so can adjust 7 horizontal and vertical positions of laser diode mount pad, and can reduce the pulling force, adjust 7 angle of laser and the vertical direction of grating 14 promptly of laser diode mount pad.
The parallel laser light is diffracted under the action of the grating 14, and a part of diffracted light returns to the laser diode 6, so that the cavity length of the laser is increased, and the remaining laser light continues to propagate forwards, is reflected on the surface of the reflector 13, and propagates forwards to be output laser light. The grating seat 10 is a partial cylinder, the outer diameter of the grating seat 10 is the same as the inner diameter of the groove 902 processed by the base 9 for placing the grating seat 10, the grating seat 10 can rotate around the shaft in the groove 902 in the base 9, and the horizontal included angle between the laser and the grating 14 is changed by rotating the grating seat 10, so that the laser frequency is changed. The grating seat 10 is provided with a through hole 19, the base 9 is provided with a threaded hole 18, and after a working point is roughly found, the grating seat 10 and the base 9 are fixed by fixing screws through the through hole 19 and the threaded hole 18. The through holes 20 are enlarged in the circumferential direction to prevent the screws from blocking the rotation of the grating mount 10.
The grating 14 is ensured to be parallel to the surface of the reflector 13, so that the propagation direction of the laser is not changed when the grating seat rotates.
The adjusting method comprises the following steps:
1) after the laser diode 6 emits light through the control box, the aspheric lens 8 is rotated, so that the distance between the laser diode 6 and the aspheric lens 8 is changed until the light emitting point of the laser diode 6 is positioned on the focal plane of the aspheric lens 8, and the laser emitted by the laser diode 6 is shaped into parallel light.
2) By adjusting screws which penetrate through the through holes 901 and are fixed with the laser diode mounting base 7, specifically, one end of each screw is screwed, and the other end of each screw is loosened, the left and right positions of the laser diode mounting base 7 relative to the optical axis of the aspheric lens 8 are changed until the shapes of light spots emitted by the laser diodes 6 are symmetrical left and right.
3) The screw fixed with the screw hole 18 through the through hole 19 is loosened. So that the grating holder 10 can rotate relative to the base 9. The current through the laser diode 6 is controlled by the housing to be near a threshold value, so that the laser power emitted by the laser diode 6 changes significantly when the grating 14 is located near the operating point. The grating seat 10 is rotated, a rough working point is found through the laser power change emitted by the laser diode 6, and the grating seat 10 and the base 9 are fixed together by fixing screws and cannot generate relative displacement.
4) Screws at two ends for fixing the laser diode mounting base 7 are slightly loosened, so that the laser diode mounting base 7 can rotate in a pitching mode. The laser diode mount 7 is rotated until the laser power emitted by the laser diode 6 reaches a maximum value. And then screws at two ends are fastened, so that the laser diode mounting seat 7 and the base 9 cannot generate relative displacement.
5) By controlling the cavity length of the case periodically scanning the piezoelectric ceramic 15, namely, the angle between the periodic scanning grating 14 and the light, by detecting the frequency of the laser, the modulation fine adjustment screw 17 finely adjusts the angle between the grating 14 and the light, and by changing the working temperature of the laser diode 6 through the semiconductor refrigerator 5, until the laser frequency is periodically tuned without mode hopping at the target frequency.
The debugging of the tunable external cavity semiconductor laser is completed through the steps, so that the laser works at the target frequency.
It is noted that the disclosed embodiments are intended to aid in further understanding of the invention, but those skilled in the art will appreciate that: various substitutions and modifications are possible without departing from the spirit and scope of the invention and appended claims. Therefore, the invention should not be limited to the embodiments disclosed, but the scope of the invention is defined by the appended claims.
Claims (10)
1. A tunable external cavity semiconductor laser is characterized by comprising a laser shell, and a laser diode (6), a laser diode mounting seat (7), an aspheric lens (8), a base (9) and a grating seat (10) which are positioned in the laser shell; wherein,
a window mounting hole is processed on a front cover plate (3) of the laser shell and used for mounting a window matched with the wave band of the laser; the laser diode (6) is fixed on the laser diode mounting seat (7) through a laser diode pressing block (12), and the light emitting point of the laser diode (6) is positioned at the focus of the aspheric lens (8); the laser diode mounting seat (7) is fixed on the base (9);
the grating seat (10) is fixed on the base (9), the middle part of the grating seat (10) is provided with an adjustable part (21), and the adjustable part (21) is connected with the grating seat (10) through a hinge; the grating (14) and the reflector (13) are arranged in the adjustable part (21), one end of the piezoelectric ceramic (15) is connected to the outside of the adjustable part (21), and the other end of the piezoelectric ceramic is connected to the stainless steel plate (16); a precision adjusting screw (17) is arranged on the grating seat (10), one end of the precision adjusting screw (17) is in contact with the stainless steel plate (16) and is used for applying external force to the adjustable part (21) by adjusting the precision adjusting screw (17) to enable the adjustable part to rotate, and precision adjustment of a horizontal included angle between laser and a grating (14) is realized; the piezoelectric ceramic (15) is used for periodically changing the angle of the grating (14) to realize the periodic scanning of the laser frequency;
the base (9) is provided with a two-way light hole channel for enabling laser output by the aspheric lens (8) to enter the grating (14) through the first light hole channel, and light diffracted by the grating (14) is output through the reflector (13) and the second light hole channel.
2. A tunable external cavity semiconductor laser according to claim 1, wherein the lens (8) is screw-mounted with the diode mount (7), and the distance between the aspherical lens (8) and the laser diode (6) is adjusted by rotating the aspherical lens (8) under the action of the screw.
3. A tuneable external cavity semiconductor laser according to claim 1 wherein the laser diode mount (7) is fixed to the base (9) by means of through holes (901) in the base (9).
4. A tuneable external cavity semiconductor laser according to claim 1, characterised in that the grating mount (10) is provided with through holes (19) and the base (9) is provided with threaded holes (18), the grating mount (10) being fixed to the base (9) by screws passing through the through holes (19) and the threaded holes (18).
5. A tuneable external cavity semiconductor laser according to claim 1 wherein the base (9) has a recess (902) machined therein for receiving the grating mount (10); the grating seat (10) is a partial cylinder, the outer diameter of the grating seat (10) is the same as the inner diameter of the groove (902), and the grating seat (10) can rotate around a shaft in the groove (902) and is used for changing the horizontal included angle between laser and a grating (14) by rotating the grating seat (10), so that the laser frequency is changed.
6. A tuneable external cavity semiconductor laser according to claim 1 or 5, characterised in that the grating (14) is parallel to the surface of the mirror (13) for ensuring that the propagation direction of the laser light is not changed when the grating mount (10) is rotated.
7. A tuneable external cavity semiconductor laser according to claim 1, wherein the contact end of the fine adjustment screw (17) with the stainless steel plate (16) is a ball head.
8. A tunable external cavity semiconductor laser according to claim 1, wherein a semiconductor refrigerator (5) and a thermistor (22) are arranged in the laser housing, a 7W2 interface is arranged on the back cover plate (4) of the laser housing, and the leads of the semiconductor refrigerator (5), the laser diode (6), the thermistor (22) and the piezoelectric ceramic (15) are respectively connected with the control cabinet through a 7W2 interface.
9. A method of tuning a tunable external cavity semiconductor laser as described in claim 1, comprising the steps of:
1) after the laser diode (6) emits light through the control box, the aspheric lens (8) is rotated to change the distance between the laser diode (6) and the aspheric lens (8) until the light emitting point of the laser diode (6) is positioned on the focal plane of the aspheric lens (8), and parallel light is output;
2) the left and right positions of the laser diode mounting seat (7) relative to the optical axis of the aspheric lens (8) are adjusted until the shapes of light spots emitted by the laser diode (6) are symmetrical;
3) rotating the grating seat (10), primarily finding a working point through the power change of laser emitted by the laser diode (6), and then fixing the grating seat (10) and the base (9) together;
4) rotating the laser diode mounting seat (7) until the laser power emitted by the laser diode (6) reaches the maximum value; then fixing the laser diode mounting seat (7) and the base (9) together;
5) the cavity length of the piezoelectric ceramic (15) is periodically scanned by a control cabinet, and the angle between the grating (14) and the light is precisely adjusted by modulating a precise adjusting screw (17) by detecting the frequency of the laser until the frequency of the laser is not periodically tuned in a mode adjusting mode at the target frequency.
10. The method as claimed in claim 9, wherein in step 2), the left and right positions of the laser diode mounting base (7) relative to the optical axis of the aspheric lens (8) are changed by adjusting the screws which penetrate through the through holes (901) and are fixed with the laser diode mounting base (7), specifically one end is screwed and the other end is loosened, until the shape of the light spot emitted by the laser diode (6) is symmetrical left and right.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110371780.0A CN113161852A (en) | 2021-04-07 | 2021-04-07 | Tunable external cavity semiconductor laser and adjusting method |
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| CN202110371780.0A CN113161852A (en) | 2021-04-07 | 2021-04-07 | Tunable external cavity semiconductor laser and adjusting method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090034563A1 (en) * | 2007-06-18 | 2009-02-05 | Thomas Heine | Tunable diode laser system with external resonator |
| CN103532011A (en) * | 2012-07-05 | 2014-01-22 | 北京大学 | Novel external-cavity semiconductor laser |
| CN105932541A (en) * | 2016-06-14 | 2016-09-07 | 西安交通大学 | Tunable semiconductor laser with Littman-structured outer cavity |
| CN206283095U (en) * | 2016-12-12 | 2017-06-27 | 中国科学院西安光学精密机械研究所 | Grating angle adjusting device with hinge structure |
| CN109936047A (en) * | 2019-04-15 | 2019-06-25 | 山西大学 | A kind of grating external-cavity feedback semiconductor laser and its adjusting method |
-
2021
- 2021-04-07 CN CN202110371780.0A patent/CN113161852A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090034563A1 (en) * | 2007-06-18 | 2009-02-05 | Thomas Heine | Tunable diode laser system with external resonator |
| CN103532011A (en) * | 2012-07-05 | 2014-01-22 | 北京大学 | Novel external-cavity semiconductor laser |
| CN105932541A (en) * | 2016-06-14 | 2016-09-07 | 西安交通大学 | Tunable semiconductor laser with Littman-structured outer cavity |
| CN206283095U (en) * | 2016-12-12 | 2017-06-27 | 中国科学院西安光学精密机械研究所 | Grating angle adjusting device with hinge structure |
| CN109936047A (en) * | 2019-04-15 | 2019-06-25 | 山西大学 | A kind of grating external-cavity feedback semiconductor laser and its adjusting method |
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Application publication date: 20210723 |