CN113161456A - Nitride light emitting diode and manufacturing method thereof - Google Patents

Nitride light emitting diode and manufacturing method thereof Download PDF

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CN113161456A
CN113161456A CN202110489422.XA CN202110489422A CN113161456A CN 113161456 A CN113161456 A CN 113161456A CN 202110489422 A CN202110489422 A CN 202110489422A CN 113161456 A CN113161456 A CN 113161456A
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nitride layer
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张国华
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes

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Abstract

The invention discloses a nitride light-emitting diode and a manufacturing method thereof, wherein the nitride light-emitting diode comprises a substrate, and a buffer layer, a low-temperature three-dimensional nitride layer, a u-type nitride layer, an n-type nitride layer, a light-emitting layer and a p-type nitride layer which are sequentially arranged on the substrate, and is characterized in that: and a low-temperature p-type two-dimensional nitride layer is arranged between the low-temperature three-dimensional nitride layer and the u-type nitride layer, and the doping concentration of the low-temperature p-type two-dimensional nitride layer is 1E 17-1E 20. According to the invention, the low-temperature p-type two-dimensional nitride layer is arranged between the low-temperature three-dimensional nitride layer and the u-type nitride layer, so that the problem of uneven brightness caused by large warpage due to high-temperature growth of the bottom layer is solved, the luminous uniformity of the nitride light-emitting diode is improved, and the luminous efficiency of the nitride light-emitting diode is improved.

Description

Nitride light emitting diode and manufacturing method thereof
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a light-emitting diode and a manufacturing method thereof.
Background
A Light-Emitting Diode (LED) is a semiconductor electronic device capable of Emitting Light. The LED display has the advantages of small volume, low energy consumption, long service life, low driving voltage and the like, and is widely applied to the fields of indicator lamps, backlight sources, display screens and the like. The pursuit of high brightness and high performance has become a trend, and the improvement of the light emitting efficiency of LED chips is urgent to meet the increasing demand. LED lighting has become a significant proposition to replace traditional lighting, and in the next few years LED lighting will have gone into a high-speed growth phase. In addition, a mini LED and a micro LED are also important development items in recent years, the key of the LED lies in the improvement of blue-green light LED epitaxial chip technology, and the breakthrough development of the technology drives the whole application and requirement to be improved.
The gallium nitride material has higher growth quality only in a high-temperature growth environment, and the high-temperature growth causes the warping degree of a wafer to be increased, so that the wavelength and the brightness distribution of the externally extended gallium nitride are uneven, and the brightness of the nitride light-emitting diode is influenced. At present, it is an important subject to develop a new technique for improving the distribution uniformity of gallium nitride by improving the design of a graphite disk for epitaxial growth or by improving the distribution uniformity of gallium nitride by using the change of heterogeneous materials for different growth.
Disclosure of Invention
In order to solve the above problems, the present invention provides a nitride light emitting diode, which includes a substrate, and a buffer layer, a low-temperature three-dimensional nitride layer, a u-type nitride layer, an n-type nitride layer, a light emitting layer, and a p-type nitride layer sequentially disposed on the substrate, wherein: and a low-temperature p-type two-dimensional nitride layer is arranged between the low-temperature three-dimensional nitride layer and the u-type nitride layer, and the p-type doping concentration of the low-temperature p-type two-dimensional nitride layer is 1E 17-1E 20.
Preferably, the p-type doping concentration of the low-temperature p-type two-dimensional nitride layer is 1E 17-1E 19.
Preferably, the thickness of the low-temperature p-type two-dimensional nitride layer is 1-3 μm.
Preferably, the low-temperature p-type two-dimensional nitride layer is of a single-layer or multi-layer structure.
Preferably, the low-temperature p-type two-dimensional nitride layer is of a uGaN/pGaN superlattice structure.
Preferably, the logarithm of the superlattice structure is 2-50.
Preferably, the thickness of the u-shaped nitride layer is 0.5 to 1 μm.
The invention also discloses a preparation method of the nitride light-emitting diode, which comprises the following steps:
1. providing a substrate;
2. growing a buffer layer, a low-temperature three-dimensional nitride layer, a u-type nitride layer, an n-type nitride layer, a light-emitting layer and a p-type nitride layer on the substrate;
the method is characterized in that: the method further comprises the following step of forming a low-temperature p-type two-dimensional nitride layer between the low-temperature three-dimensional nitride layer and the u-type nitride layer, wherein the p-type doping concentration of the low-temperature p-type two-dimensional nitride layer is 1E 17-1E 20.
Preferably, the growth temperature of the low-temperature p-type two-dimensional nitride layer is 900-1050 ℃, and the growth pressure is 100-300 torr.
According to the invention, the low-temperature p-type two-dimensional nitride layer is arranged between the low-temperature three-dimensional nitride layer and the u-type nitride layer, so that the problem of uneven brightness caused by large warpage due to high-temperature growth of the bottom layer is solved, the luminous uniformity of the nitride light-emitting diode is improved, and the luminous efficiency of the nitride light-emitting diode is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
While the invention will be described in connection with certain exemplary implementations and methods of use, it will be understood by those skilled in the art that it is not intended to limit the invention to these embodiments. On the contrary, the intent is to cover all alternatives, modifications and equivalents as included within the spirit and scope of the invention as defined by the appended claims.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. Furthermore, the drawing figures are for a descriptive summary and are not drawn to scale.
Fig. 1 is a schematic structural diagram of a light emitting diode according to an embodiment of the invention.
Fig. 2 is a schematic structural diagram of another light emitting diode according to an embodiment of the invention.
Fig. 3 is a schematic structural diagram of a light emitting layer of the light emitting diode according to the embodiment of the invention.
Element numbering in the figures:
1: a substrate; 2: a buffer layer; 3: a low temperature three-dimensional nitride layer; 4: a low temperature p-type two-dimensional nitride layer; 5: a u-type nitride layer; 6: an n-type nitride layer; 7: a stress buffer layer; 8: a light emitting layer; 81: a well layer; 82: a base layer; 9: an electron blocking layer; 10: a p-type nitride layer.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
The following detailed description of the embodiments of the present invention will be provided with reference to the drawings and examples, so that how to apply the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented.
Example 1
Referring to fig. 1, the present invention provides a nitride light emitting diode, which includes: the light-emitting diode comprises a substrate 1, a buffer layer 2, a low-temperature three-dimensional nitride layer 3, a low-temperature P-type two-dimensional nitride layer 4, a u-type nitride layer 5, an n-type nitride 6, a stress release layer 7, a light-emitting layer 8, an electron blocking layer 9 and a P-type nitride layer 10 which are sequentially grown on the substrate 1.
The substrate 1 may be made of a conductive material or an insulating material, and its material of fabrication may be selected from any one of sapphire, aluminum nitride, gallium nitride, silicon carbide, gallium arsenide, gallium nitride, and single crystal oxide having a lattice constant close to that of a nitride semiconductor material. In order to improve the light extraction efficiency of the nitride light emitting diode, the nitride light emitting diode may be patterned to form a series of concave-convex structures on the surface thereof.
In order to reduce the lattice mismatch between the substrate 1 and the n-type nitride layer 6, a buffer layer 2 is grown between the substrate 1 and the n-type nitride layer 6, so that the lattice constant of the buffer layer 2 is between the substrate 1 and the n-type nitride layer 6, and may be made of a material including AlxInyGa1-x-yAnd N is made of a material, wherein x is more than or equal to 0 and less than or equal to 1, and y is more than or equal to 0 and less than or equal to 1, and specifically can be an AlN layer, a GaN layer, an AlGaN layer, an AlInGaN layer, an InGaN layer and the like. The buffer layer 2 may be formed by an MOCVD method or a PVD method. In some optional embodiments, the thickness of the buffer layer is 10 to 50 nm.
Forming a low-temperature three-dimensional nitride layer 3 on the buffer layer 2, wherein the growth mode of the nitride is three-dimensional by controlling the growth temperature and the growth pressure, the low-temperature three-dimensional nitride layer 3 is undoped, and the thickness of the low-temperature three-dimensional nitride layer 3 is preferably 1-3 μm.
In the prior art, the LED epitaxial structure uses high temperature growth of gan to form a gan two-dimensional layer, which results in increased wafer warpage and uneven wavelength and brightness distribution of the grown gan, thereby resulting in poor brightness. In order to solve the problem of uneven brightness of light emitted due to the large warpage caused by the high-temperature growth of the bottom layer, the invention proposes to form a low-temperature p-type two-dimensional nitride layer 4 on the low-temperature three-dimensional nitride layer 3, and magnesium atoms can be doped to fill the defect part in a low-temperature environment, so that gallium nitride tends to grow transversely into two-dimensional growth, the warping degree of a wafer can be reduced, the wavelength and brightness distribution uniformity of the gallium nitride can be improved, and the brightness of the nitride light emitting diode can be improved.
The p-type doping concentration of the low-temperature p-type two-dimensional nitride layer 4 is 1E 17-1E 20, and in some embodiments, the p-type doping concentration of the low-temperature p-type two-dimensional nitride layer 4 is 1E 17-1E 19. The p-type doping concentration of the low-temperature p-type two-dimensional nitride layer 4 is too low to provide enough magnesium atoms to fill the defect part, so that the gallium nitride tends to grow in a transverse direction into two-dimensional growth; the p-type doping concentration of the low-temperature p-type two-dimensional nitride layer 4 is too high, so that the crystal quality of the low-temperature p-type two-dimensional nitride layer is reduced, the crystal quality of a subsequent n-type nitride layer and a light-emitting layer is influenced, and the light-emitting brightness of the nitride light-emitting diode is influenced. In some embodiments, the doping of the P-type two-dimensional nitride layer 4 is a fixed doping; in some optional embodiments, the doping of the P-type two-dimensional nitride layer 4 is graded doping.
In some optional embodiments, the low-temperature p-type two-dimensional nitride layer 4 is a single-layer structure, and the doping concentration thereof is fixed doping or graded doping, as shown in fig. 1; in some optional embodiments, the low-temperature p-type two-dimensional nitride layer 4 has a multi-layer structure, preferably, the low-temperature p-type two-dimensional nitride layer 4 has a uGaN/pGaN superlattice structure, and the number of pairs of the u-type GaN/p-type GaN superlattice structure is preferably 2-50 pairs, as shown in FIG. 2.
The thickness of the low-temperature p-type two-dimensional nitride layer 4 is 1-3 mu m. The thickness of the low-temperature p-type two-dimensional nitride layer 4 is too thin, so that the low-temperature three-dimensional nitride layer 3 cannot be filled, and meanwhile, the driving voltage is increased due to insufficient thickness of the two-dimensional nitride layer, so that more power is consumed in use; the thickness of the low-temperature p-type two-dimensional nitride layer 4 is too thick, so that the epitaxial growth time is prolonged, and the epitaxial growth cost is increased.
The u-shaped nitride layer 5 is formed on the low-temperature p-shaped two-dimensional nitride layer 4, and the thickness of the u-shaped nitride layer 5 is 0.5-1 mu m, so that the crystal quality is improved.
The n-type nitride layer 6 is located between the buffer layer 2 and the light emitting layer 8, and provides electrons. The n-type nitride layer supplies electrons by doping n-type impurities such as Si, Ge, Sn, Se, and Te. In this embodiment, the n-type impurity is preferably Si. The n-type nitride layer 6 has a thickness of 1 to 4 μm and a doping concentration of 1 × 1017~5×1019/cm3To provide electrons that radiatively recombine. The n-type nitride layer 6 may be a single layer structure or a superlattice structure.
A stress release layer 7 can be grown between the n-type nitride layer 6 and the light emitting layer 8 to release stress generated in the growth process of the n-type nitride layer 6, and the size of the V-shaped pit can be adjusted to improve the brightness of the nitride light emitting diode. The stress relaxation layer 7 may be a superlattice structure such as a superlattice structure formed by alternately stacking InGaN and GaN layers, or may be a single-layer structure.
The light emitting layer 8 is disposed between the n-type nitride layer 3 and the p-type nitride layer 10. The light-emitting layer 8 is a region for providing light radiation by recombination of electrons and holes, different materials can be selected according to different light-emitting wavelengths, and the light-emitting layer 8 can be a periodic structure of a single quantum well or a multiple quantum well. The light emitting layer 8 includes a well layer 81 and a barrier layer 82, wherein the barrier layer 82 has a larger band gap than the well layer 81. By adjusting the composition ratio of the semiconductor material in the light-emitting layer 8, light of different wavelengths is desirably radiated. As shown in fig. 3, the light emitting layer 8 is formed by alternately stacking well layers 81 and barrier layers 82. In some embodiments, the light emitting layer 8 has 5 to 15 periods of InGaN/GaN multiple quantum wells, the thickness of InGaN in each period is 2 to 4nm, and the thickness of GaN is 3 to 15 nm. In some embodiments, the barrier layer of the quantum well may be doped with a small amount of Al and be composed of AlGaN.
In order to prevent the electrons from overflowing, an electron blocking layer 9 is arranged behind the light-emitting layer 8, wherein the electron blocking layer 9 can be made of AlcIndGa1-c-dN material, c is more than 0, d is more than or equal to 0, and c + d is less than or equal to 1. For example, the electron blocking layer may be one or a combination of more of AlN, AlGaN, or AlInGaN. The energy gap height of the electron blocking layer 9 is higher than the energy gap width of the light emitting layer middle barrier layer 81. In some alternative embodiments, the electron blocking layer 9 has a higher band gap height than the band gap width of GaN. In some alternative embodiments, the Al composition of the electron blocking layer 9 is higher than the Al composition of the barrier layer 81 in the light emitting layer 8. In order to improve the electron blocking layer 9 and reduce the occurrence of electron overflow, the thickness of the electron blocking layer 9 is preferably 1nm or more; since the electron blocking layer 9 has an excessively large thickness and affects the hole injection efficiency, the thickness of the electron blocking layer 6 is set to 50nm or less.
A p-type nitride layer 10 is located over the electron blocking layer 9, the p-type nitride layer 10 providing holes by doping with p-type impurities, which may be Mg, Zn, Ca, Sr, and Ba. This example, youAnd selecting the p-type impurity as Mg. The p-type nitride layer 10 further comprises a p-type ohmic contact layer (not shown), which is highly doped, for example, with a doping concentration higher than 1 × 1020Atoms/cm3And ohmic contact is formed with the p-type electrode of the nitride light emitting diode.
According to the embodiment of the invention, the low-temperature p-type two-dimensional nitride layer is arranged between the low-temperature three-dimensional nitride layer and the u-type nitride layer, so that the problem of uneven brightness caused by large warpage due to high-temperature growth of the bottom layer is solved, the luminous uniformity of the nitride light-emitting diode is improved, and the luminous efficiency of the nitride light-emitting diode is improved.
Example 2
The manufacturing process of the semiconductor light emitting element of the foregoing embodiment will be described in detail.
Firstly, providing a substrate 1, wherein in the embodiment, the substrate 1 is preferably a sapphire substrate; in order to reduce the lattice mismatch between the substrate 1 and the n-type nitride layer 6, a buffer layer 2 is formed on the substrate 1, and in this embodiment, the thickness of the buffer layer 2 is preferably 10 to 50nm, and the growth temperature is preferably 500 to 800 ℃.
And then, forming a low-temperature three-dimensional nitride layer 3 on the buffer layer 2, preferably, the growth temperature of the low-temperature three-dimensional nitride layer 3 is 900-1050 ℃, the growth pressure is 100-300 torr, and the thickness is 1-3 μm.
And then, forming a low-temperature p-type two-dimensional nitride layer 4 on the low-temperature three-dimensional nitride layer 3, preferably, the growth temperature of the low-temperature p-type two-dimensional nitride layer 4 is 900-1050 ℃, the growth pressure is 100-300 torr, and the thickness is 1-3 μm. The p-type concentration of the low-temperature p-type two-dimensional nitride layer 4 is 1E 17-1E 20, and in some embodiments, the p-type doping concentration of the low-temperature p-type two-dimensional nitride layer 4 is 1E 17-1E 19.
In some optional embodiments, the low-temperature p-type two-dimensional nitride layer 4 is a single-layer structure, and the doping concentration thereof is fixed doping or graded doping, as shown in fig. 1; in some optional embodiments, the low-temperature p-type two-dimensional nitride layer 4 has a multi-layer structure, preferably, the low-temperature p-type two-dimensional nitride layer 4 has a uGaN/pGaN superlattice structure, and the number of pairs of the u-type GaN/p-type GaN superlattice structure is preferably 2-50 pairs, as shown in FIG. 2.
And then, forming a u-shaped nitride layer 5 on the low-temperature p-type two-dimensional nitride layer 4, wherein the thickness of the u-shaped nitride layer 5 is 0.5-1 mu m.
Then, an n-type nitride layer 6 is formed on the u-type nitride layer 5, the growth temperature of the n-type nitride layer 6 is 1050 ℃ -1150 ℃, the growth pressure is 100-300 torr, the thickness is 1-4 μm, and the doping concentration is 1 x 1017~5×1019/cm3In the meantime. The n-type nitride layer 6 may be a single layer or a superlattice structure.
Next, a stress release layer 7 is formed on the n-shaped nitride layer 6, in the embodiment, the stress release layer 7 is preferably a superlattice structure, such as a superlattice structure formed by alternately stacking InGaN and GaN layers, and in some embodiments, the stress release layer 7 may also be a single layer structure.
Next, a light-emitting layer 8 is formed on the stress relieving layer 7. In this embodiment, the light emitting layer 8 preferably has a multi-quantum well periodic structure, the light emitting layer 8 has 5 to 15 periods of InGaN/GaN multi-quantum wells, the thickness of InGaN in each period is 2 to 4nm, and the thickness of GaN is 3 to 15 nm. In some embodiments, the barrier layer of the quantum well may be doped with a small amount of Al and be composed of AlGaN.
Next, an electron blocking layer 9 is formed on the light emitting layer 8, and the electron blocking layer 9 can suppress overflow of electrons. In an embodiment, the electron blocking layer 9 is preferably made of one or more materials such as AlN, AlGaN, or AlInGaN. The thickness of the electron blocking layer 9 is preferably 1nm or more and 50nm or less.
Finally, a p-type nitride layer 10 is formed over the electron blocking layer 9, preferably doped with Mg in this embodiment to provide holes. The p-type nitride layer 10 further comprises a p-type ohmic contact layer (not shown), which is highly doped, for example, with a doping concentration higher than 1 × 1020Atoms/cm3And ohmic contact is formed with the p-type electrode.
According to the embodiment of the invention, the low-temperature p-type two-dimensional nitride layer is arranged between the low-temperature three-dimensional nitride layer and the u-type nitride layer, so that the problem of uneven brightness caused by large warpage due to high-temperature growth of the bottom layer is solved, the luminous uniformity of the nitride light-emitting diode is improved, and the luminous efficiency of the nitride light-emitting diode is improved.
It should be noted that the above-mentioned embodiments are only for illustrating the present invention, and not for limiting the present invention, and those skilled in the art can make various modifications and variations to the present invention without departing from the spirit and scope of the present invention, so that all equivalent technical solutions also belong to the scope of the present invention, and the scope of the present invention should be defined by the claims.

Claims (10)

1. Nitride emitting diode contains the substrate to and the buffer layer that is located the substrate in proper order, the three-dimensional nitride layer of low temperature, u type nitride layer, n type nitride layer, luminescent layer and p type nitride layer, its characterized in that: and a low-temperature p-type two-dimensional nitride layer is arranged between the low-temperature three-dimensional layer and the u-type nitride layer, and the p-type doping concentration of the low-temperature p-type two-dimensional nitride layer is 1E 17-1E 20.
2. The nitride light emitting diode according to claim 1, wherein: the p-type doping concentration of the low-temperature p-type two-dimensional nitride layer is 1E 17-1E 19.
3. The nitride light emitting diode according to claim 1, wherein: the thickness of the low-temperature p-type two-dimensional nitride layer is 1-3 mu m.
4. The nitride light emitting diode according to claim 1, wherein: the low-temperature p-type two-dimensional nitride layer is of a single-layer or multi-layer structure.
5. The nitride light emitting diode according to claim 1, wherein: the low-temperature p-type two-dimensional nitride layer is of a uGaN/pGaN superlattice structure.
6. The nitride light emitting diode according to claim 5, wherein: the logarithm of the superlattice structure is 2-50.
7. The nitride light emitting diode according to claim 1, wherein: the p-type doping of the low-temperature p-type two-dimensional nitride layer is in a fixed doping or gradient doping mode.
8. The nitride light emitting diode according to claim 1, wherein: the thickness of the u-shaped nitride layer is 0.5-1 μm.
9. A method of fabricating a nitride light emitting diode, comprising the steps of:
1. providing a substrate;
2. growing a buffer layer, a low-temperature three-dimensional nitride layer, a u-type nitride layer, an n-type nitride layer, a light-emitting layer and a p-type nitride layer on the substrate;
the method is characterized in that: the method further comprises the following step of forming a low-temperature p-type two-dimensional nitride layer between the low-temperature three-dimensional nitride layer and the u-type nitride layer, wherein the p-type doping concentration of the low-temperature p-type two-dimensional nitride layer is 1E 17-1E 20.
10. The method for manufacturing a nitride light emitting diode according to claim 9, characterized in that: the growth temperature of the low-temperature p-type two-dimensional layer is 900-1050 ℃, and the growth pressure is 100-300 torr.
CN202110489422.XA 2021-05-06 2021-05-06 Nitride light emitting diode and manufacturing method thereof Pending CN113161456A (en)

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Application publication date: 20210723