CN113148989B - Semiconductor graphene nanoribbon and preparation method and application thereof - Google Patents
Semiconductor graphene nanoribbon and preparation method and application thereof Download PDFInfo
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- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- C01B2204/20—Graphene characterized by its properties
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- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/32—Size or surface area
Abstract
The invention provides a semiconductor graphene nanoribbon and a preparation method and application thereof, wherein the preparation method comprises the following steps: annealing the single-walled carbon nanotube in air, adding the single-walled carbon nanotube into concentrated sulfuric acid, and stirring to obtain a single-walled carbon nanotube suspension; adding potassium permanganate into the single-walled carbon nanotube suspension for reaction; after the reaction is finished, pouring the reaction liquid into ice water, filtering and drying to obtain the single-walled carbon nanotube with defects; and adding the obtained single-walled carbon nanotube with the defects into a sodium dodecyl benzene sulfonate aqueous solution for ultrasonic treatment, filtering and drying to obtain a semiconductor graphene nanoribbon, and annealing at high temperature to obtain the high-quality semiconductor graphene nanoribbon. The method has simple process and is easy for large-scale preparation, and the obtained semiconductor graphene nanoribbon has high quality and good uniformity. The field effect transistor based on the obtained graphene nanoribbon is not only obtained to exceed 105And also has a photo-luminescent effect.
Description
Technical Field
The invention relates to a semiconductor graphene nanoribbon and a preparation method and application thereof, and belongs to the technical field of graphene material preparation.
Background
Graphene has attracted great interest to researchers due to its excellent electrical, thermal and mechanical properties. As conventional electronic devices are getting closer to their size limits, graphene is also considered as a potential substitute or supplement for silicon in future electronic sciences, and thus has great electronic application prospects. However, graphene is essentially a semi-metallic material due to its lack of energy band gap, and thus poses a great obstacle in its electronic applications. For example, field effect transistors manufactured based on graphene materials have difficulty in achieving current turn-off, and therefore, the current switching ratio shown is often lower than ten, which is several orders of magnitude lower than the switching ratio expected to be required for constructing functional chips. Compared to common graphene materials, graphene nanoribbons have attracted more and more attention due to their intrinsic semiconductor properties. The band gap of the graphene nanoribbon is generated by the transverse quantum confinement effect, and theoretical research also predicts that the graphene nanoribbon is a direct band gap semiconductor, so that the graphene nanoribbon has an excellent electronic prospect and has a very great potential in optoelectronics. Generally, field effect transistors based on graphene nanoribbons require at least a width of less than 3 nanometers, corresponding to a minimum band gap of greater than 0.7 electron volts, if they can function properly. However, even with the most advanced nanolithography technologies today, achieving such widths is extremely challenging. Therefore, how to prepare high-quality semiconductor graphene nanoribbons still remains an urgent problem to be solved.
At present, the preparation method of the graphene nanoribbon can be divided into a top-down method and a bottom-up method, wherein the top-down method generally takes a carbon nanotube or graphene as a raw material to prepare the graphene nanoribbon; and (3) growing the graphene nanoribbon by using gas or organic matter containing carbon element as a raw material from bottom to top. The top-down method is one of the mature methods at present, and mainly comprises a cracking carbon nanotube method, a catalytic method and an etching method. Among them, the cracking carbon nanotube method has led to extensive research because it can control the width and number of layers of graphene nanoribbons. There are many reports on methods for preparing graphene nanoribbons by cracking carbon nanotubes. For example: chinese patent document CN104817075A provides a method for preparing a highly dispersed graphene oxide nanobelt solution, wherein the preparation of the graphene nanobelt is performed by oxidative cracking of a carbon nanotube in a mixed solution of sulfuric acid and potassium permanganate by using an oxidative cracking method to obtain the graphene oxide nanobelt. However, the graphene nanomaterial obtained by the method has a large number of oxygen-containing groups, so that the graphene nanomaterial has extremely low conductivity, belongs to a typical insulator material, and cannot be applied to semiconductor devices. The Machine and the like report a method for preparing a graphene nanoribbon by cracking a single-walled carbon nanotube, the graphene nanoribbon is prepared by the single-walled carbon nanotube through two steps of gas-phase oxidation and ultrasonic cracking, the obtained graphene nanoribbon is narrow in width and smooth in edge, and simultaneously, the defects of the graphene nanoribbon are few as proved by a Raman spectrum (see: Machine, Leyao, preparation of the graphene nanoribbon by ultrasonic cracking of the single-walled carbon nanotube [ J ]. Chinese scientific and technical paper 20149 (20149) (272) 274.). However, the width of the graphene nanoribbon obtained by the method is about 20 nanometers, and the graphene band gap cannot be opened by the quantum confinement effect in the width direction (when the width is less than 5 nanometers, a significant quantum confinement effect is generated), that is, the obtained graphene nanoribbon still belongs to a pure conductor material, is not a semiconductor material, and therefore cannot be applied to a semiconductor device.
Therefore, there is a need to develop a method for preparing high-quality semiconductor graphene nanoribbons. The invention is therefore proposed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a semiconductor graphene nanoribbon and a preparation method and application thereof. The semiconductor graphene nanoribbon is obtained by decomposing the single-walled carbon nanotube, the method is simple in process and easy for large-scale preparation, and the obtained semiconductor graphene nanoribbon is high in quality and good in uniformity. The field effect transistor based on the prepared semiconductor graphene nanoribbon not only obtains a current on-off ratio of more than ten quintic powers, but also has a photoluminescence effect.
The technical scheme of the invention is as follows:
a preparation method of a semiconductor graphene nanoribbon comprises the following steps:
(1) preparing single-walled carbon nanotube suspension:
annealing the single-walled carbon nanotube in air, adding the single-walled carbon nanotube into concentrated sulfuric acid, and stirring to obtain a single-walled carbon nanotube suspension;
(2) preparing the defective single-walled carbon nanotubes:
adding potassium permanganate into the single-walled carbon nanotube suspension obtained in the step (1) to react; after the reaction is finished, pouring the reaction liquid into ice water, filtering and drying to obtain the single-walled carbon nanotube with defects;
(3) preparing a semiconductor graphene nanoribbon:
adding the single-walled carbon nanotube with defects obtained in the step (2) into a sodium dodecyl benzene sulfonate aqueous solution for ultrasonic treatment, and then filtering and drying to obtain a semiconductor graphene nanoribbon;
(4) preparing a high-quality semiconductor graphene nanoribbon:
and (4) carrying out high-temperature annealing on the semiconductor graphene nanoribbon obtained in the step (3) in an inert atmosphere to obtain the high-quality semiconductor graphene nanoribbon.
Preferably, according to the present invention, the diameter of the single-walled carbon nanotube in the step (1) is 1 to 2 nm.
According to the invention, the annealing temperature in the step (1) is 300-350 ℃, and the annealing time is 30-60 minutes; the annealing treatment can effectively remove the amorphous carbon mixed in the single-walled carbon nanotube.
According to the invention, the mass fraction of the concentrated sulfuric acid in the step (1) is preferably 98 wt%; the mass volume ratio of the single-walled carbon nanotube to concentrated sulfuric acid is 1 mg: 1-3 mL.
Preferably, according to the invention, the stirring time in step (1) is 2 to 6 hours.
Preferably, according to the present invention, the mass ratio of the potassium permanganate to the single-walled carbon nanotube in step (2) is 1: 2; through a large amount of researches, the inventor of the application finds that defects can be implanted in the carbon nano tubes only through reaction by strictly controlling the mass ratio of potassium permanganate to the single-walled carbon nano tubes to be 1:2, so that the single-walled carbon nano tubes with the defects can be obtained, and graphene nano bands can not be obtained through cracking of the carbon nano tubes, so that high-quality semiconductor graphene nano bands can be obtained through subsequent treatment, if the potassium permanganate ratio is too high, more obtained materials are insulator-graphene oxide nano bands, and the materials are not semiconductors and are useless for semiconductor devices; if the proportion of the single-walled carbon nanotubes is too high, the graphene nanoribbons cannot be obtained no matter how long the ultrasonic treatment is carried out.
Preferably, according to the present invention, the reaction temperature in step (2) is 45 to 60 ℃ and the reaction time is 30 to 60 minutes.
According to the invention, the volume ratio of the ice water to the reaction liquid in the step (2) is preferably 4-16: 1.
Preferably, according to the present invention, the filtration in the step (2) is filtration using a polytetrafluoroethylene filter membrane; the drying is natural air drying.
According to the invention, the mass fraction of the sodium dodecyl benzene sulfonate aqueous solution in the step (3) is preferably 1-3%; according to the invention, the sodium dodecyl benzene sulfonate is added, so that the initial single-walled carbon nanotube with defects and the graphene nanoribbon formed by subsequent cracking are uniformly dispersed in the solution; and experiments find that the effect of the sodium dodecyl benzene sulfonate cannot be replaced, namely if the sodium dodecyl benzene sulfonate is not added, the graphene nanoribbon cannot be obtained no matter how long the ultrasonic treatment is carried out.
Preferably, the mass-to-volume ratio of the single-walled carbon nanotubes with defects in step (3) to the aqueous solution of sodium dodecylbenzenesulfonate is 1 mg: 10-50 mL.
Preferably, according to the invention, the sonication time in step (3) is between 60 and 90 minutes.
Preferably, according to the present invention, the filtration in the step (3) is filtration using a polytetrafluoroethylene filter membrane; the drying is natural air drying.
Preferably, according to the present invention, the inert atmosphere in step (4) is argon or nitrogen.
According to the invention, the high-temperature annealing temperature in the step (4) is 600-800 ℃, and the high-temperature annealing time is 6-8 hours; the purpose of the high-temperature annealing is to eliminate oxygen-containing groups generated by oxidation reaction, so that the electrical properties of the semiconductor graphene nanoribbon are further improved.
The invention also provides the semiconductor graphene nanoribbon prepared by the method; the width of the graphene nanoribbon is 2.0-2.4 nm.
According to the invention, the application of the semiconductor graphene nanoribbon is used for preparing a field effect transistor.
The principle of the invention is as follows:
the principle of the invention is based on that defects are implanted in a single-walled carbon nanotube in advance through a strong oxidation reaction of potassium permanganate and concentrated sulfuric acid, and then the single-walled carbon nanotube dispersed in a sodium dodecyl benzene sulfonate aqueous solution is subjected to ultrasonic treatment, so that the existing defects are enlarged, and the purpose of opening the single-walled carbon nanotube is achieved, and the graphene nanoribbon is finally obtained, wherein the principle of the invention is shown in figure 1.
The invention has the following technical characteristics and beneficial effects:
1. the method uses the single-walled carbon nanotube as a base material, and fully utilizes the smaller and stable diameter of the single-walled carbon nanotube, so that the bandwidth of the obtained decomposed graphene nanoribbon is uniform and is 2.0-2.4nm, and the size requirement of quantum confinement effect of the band gap is completely met.
2. The inventionThe obtained semiconductor graphene nanoribbon has a band gap of 1.8 electron volts, and a field effect transistor prepared by using the semiconductor graphene nanoribbon not only obtains a current on-off ratio of more than ten quintic powers, but also has a carrier mobility of 840 square centimeters/(volt-seconds), which is more than that reported by any semiconductor graphene nanoribbon in the past and is close to a room temperature limit value. Meanwhile, after the graphene nanoribbon is prepared into a field effect transistor, the current on-off ratio of the graphene nanoribbon reaches 105It has also proven successful in opening the bandgap and having semiconducting properties.
3. The 1.8 electron volt band gap of the semiconductor graphene nanoribbon obtained by the invention belongs to a direct band gap and is in a visible light range (red light), so that the semiconductor graphene nanoribbon shows an expected red light photoluminescence phenomenon, and meanwhile, the 680nm light emitted by the semiconductor graphene nanoribbon also verifies the semiconductor property of the semiconductor graphene nanoribbon.
4. The invention has the advantages of simple manufacturing process route, high product quality, good uniformity, easy large-scale production and strong practicability. The semiconductor graphene nanoribbon obtained based on the method not only opens the band gap of graphene, but also belongs to the direct band gap category, so that the semiconductor graphene nanoribbon has great application prospects in the electronic field and the photoelectronic field.
Drawings
Fig. 1 is a schematic diagram of the principle of preparing a semiconductor graphene nanoribbon according to the present invention.
FIG. 2 is an atomic force microscope photograph of single-walled carbon nanotubes used in an embodiment of the present invention.
Fig. 3 is an atomic force microscope photograph of the carbon nanotubes obtained after the sonication for 30 minutes in example 1.
Fig. 4 is an atomic force microscope photograph of the graphene nanoribbon obtained in step (3) of example 1.
Fig. 5 is a transmission electron micrograph of the high-quality semiconducting graphene nanoribbon prepared in example 1.
Fig. 6 is an atomic force microscope photograph and photoluminescence map of the high-quality semiconductor graphene nanoribbons prepared in example 1.
Fig. 7 is an electrical output curve of a high-quality semiconductor graphene nanoribbon field effect transistor prepared based on example 1, in which gate voltages applied from top to bottom are 0 volts, -10 volts, -20 volts, -30 volts, and-40 volts, respectively.
Fig. 8 is an electrical modulation curve of the high-quality semiconductor graphene nanoribbon field-effect transistor prepared based on example 1, wherein source-drain voltages applied from top to bottom are-0.1 volts, -0.3 volts, and-0.5 volts, respectively.
Fig. 9 is a photoluminescence spectrum of the product prepared in comparative example 1, starting single-walled carbon nanotube feedstock, and semiconducting graphene nanoribbons prepared in example 1.
Fig. 10 is a photoluminescence spectrum of the product prepared in comparative example 2, starting single-walled carbon nanotube feedstock, and semiconducting graphene nanoribbons prepared in example 1.
Detailed Description
The invention is further illustrated by the following examples and figures of the description, without however restricting the scope of the invention thereto.
The medicines and reagents related to the invention are common commercial products unless specified otherwise; all the related devices or apparatuses are the existing devices or apparatuses unless otherwise specified.
Example 1
A preparation method of a semiconductor graphene nanoribbon comprises the following steps:
(1) preparing single-walled carbon nanotube suspension:
annealing 50mg of single-walled carbon nanotubes with the diameter of 1.3nm in air at 300 ℃ for 30 minutes to effectively remove amorphous carbon mixed in the single-walled carbon nanotubes; and then adding the annealed single-walled carbon nanotube into 50mL of concentrated sulfuric acid with the mass fraction of 98wt%, and stirring for 2 hours to obtain a single-walled carbon nanotube suspension.
The atomic force microscope photograph of the single-walled carbon nanotube used in this step is shown in FIG. 2, and it can be seen from FIG. 2 that the diameter of the single-walled carbon nanotube used is 1.3 nm.
(2) Preparing the defective single-walled carbon nanotubes:
gradually adding 25mg of potassium permanganate into the single-walled carbon nanotube suspension obtained in the step (1), and reacting for 30 minutes at 45 ℃; after the reaction was completed, the obtained reaction solution was poured into 200mL of ice water, and then filtered by a polytetrafluoroethylene filter membrane and naturally air-dried to obtain a single-walled carbon nanotube having defects.
(3) Preparing a semiconductor graphene nanoribbon:
and (3) dispersing 20mg of the single-walled carbon nanotubes with defects obtained in the step (2) in 200mL of sodium dodecyl benzene sulfonate aqueous solution with the mass fraction of 1%, performing ultrasonic treatment for 60 minutes, wherein the ultrasonic power is 60W and the ultrasonic frequency is 40KHz, and filtering by using a polytetrafluoroethylene filtering film and naturally drying by air to obtain the semiconductor graphene nanoribbon.
In this step, the atomic force microscope photograph of the carbon nanotube obtained after 30 minutes of ultrasonic treatment is shown in fig. 3, and it can be seen from fig. 3 that the single-walled carbon nanotube has been cleaved and is in the middle stage of the half nanotube-half nanobelt, wherein the height difference between the single-walled carbon nanotube and the nanobelt is 0.9 nm.
An atomic force microscope photograph of the graphene nanoribbon obtained in the step is shown in fig. 4, and it can be seen from the drawing that a single-layer graphene nanoribbon is obtained, and the thickness of the single-layer graphene nanoribbon is 0.5 nm.
(4) Preparing a high-quality semiconductor graphene nanoribbon:
and (4) annealing the semiconductor graphene nanoribbon obtained in the step (3) at a high temperature of 600 ℃ for 6 hours in a nitrogen atmosphere, and naturally cooling to room temperature to obtain the high-quality semiconductor graphene nanoribbon.
The transmission electron micrograph of the high-quality semiconductor graphene nanoribbon prepared in this example is shown in fig. 5, and it can be seen from fig. 5 that the graphene nanoribbon has a uniform bandwidth and a width of 2.2 nm.
Fig. 6 shows an atomic force microscope photograph and a photoluminescence chart of the high-quality semiconductor graphene nanoribbon obtained in this embodiment, and as can be seen from fig. 6, the photoluminescence phenomenon of the graphene nanoribbon in the wavelength 685nm, i.e., in the visible light range of 1.8 electron volts (red light), not only explains the opening of the energy band gap, i.e., the semiconductor property, but also proves that the band gap belongs to the category of direct band gap.
The electrical output curves and the modulation curves of the high-quality semiconductor graphene nanoribbon field-effect transistor prepared based on the embodiment are respectively shown in fig. 7 and fig. 8, the electrical output curves show that the field-effect transistor based on the semiconductor graphene nanoribbon of the embodiment has a good current regulation function, and the electrical modulation curves show that the current switching ratio of the field-effect transistor based on the semiconductor graphene nanoribbon of the embodiment exceeds the quintic power of ten, so that the working requirements of the transistor are completely met.
Example 2
A preparation method of a semiconductor graphene nanoribbon comprises the following steps:
(1) preparing single-walled carbon nanotube suspension:
annealing 50mg of single-walled carbon nanotubes with the diameter of 1.3nm in air at 300 ℃ for 60 minutes to effectively remove amorphous carbon mixed in the single-walled carbon nanotubes; and then adding the annealed single-walled carbon nanotube into 100mL of concentrated sulfuric acid with the mass fraction of 98wt%, and stirring for 2 hours to obtain a single-walled carbon nanotube suspension.
(2) Preparing the defective single-walled carbon nanotubes:
gradually adding 25mg of potassium permanganate into the single-walled carbon nanotube suspension obtained in the step (1), and reacting for 60 minutes at 45 ℃; after the reaction is finished, pouring the obtained reaction liquid into 400mL of ice water, filtering by using a polytetrafluoroethylene filter membrane, and naturally drying by air to obtain the single-walled carbon nanotube with defects.
(3) Preparing a semiconductor graphene nanoribbon:
and (3) dispersing 20mg of the single-walled carbon nanotubes with defects obtained in the step (2) in 200mL of sodium dodecyl benzene sulfonate aqueous solution with the mass fraction of 2%, performing ultrasonic treatment for 60 minutes, wherein the ultrasonic power is 60W and the ultrasonic frequency is 40KHz, filtering by using a polytetrafluoroethylene filtering film, and naturally drying to obtain the semiconductor graphene nanoribbon.
(4) Preparing a high-quality semiconductor graphene nanoribbon:
and (4) annealing the semiconductor graphene nanoribbon obtained in the step (3) at a high temperature of 600 ℃ for 7 hours in a nitrogen atmosphere, and naturally cooling to room temperature to obtain the high-quality semiconductor graphene nanoribbon.
Example 3
A preparation method of a semiconductor graphene nanoribbon comprises the following steps:
(1) preparing single-walled carbon nanotube suspension:
annealing 50mg of single-walled carbon nanotubes with the diameter of 1.3nm in air at 350 ℃ for 60 minutes to effectively remove amorphous carbon mixed in the single-walled carbon nanotubes; and then adding the annealed single-walled carbon nanotube into 100mL of concentrated sulfuric acid with the mass fraction of 98wt%, and stirring for 2 hours to obtain a single-walled carbon nanotube suspension.
(2) Preparing the defective single-walled carbon nanotubes:
gradually adding 25mg of potassium permanganate into the single-walled carbon nanotube suspension obtained in the step (1), and reacting for 30 minutes at 60 ℃; after the reaction is finished, pouring the obtained reaction liquid into 800mL of ice water, filtering by using a polytetrafluoroethylene filter membrane, and naturally drying by air to obtain the single-walled carbon nanotube with defects.
(3) Preparing a semiconductor graphene nanoribbon:
and (3) dispersing 20mg of the single-walled carbon nanotubes with defects obtained in the step (2) into 200mL of sodium dodecyl benzene sulfonate aqueous solution with the mass fraction of 3%, performing ultrasonic treatment for 90 minutes, wherein the ultrasonic power is 60W, the ultrasonic frequency is 40KHz, filtering by using a polytetrafluoroethylene filtering film, and naturally air-drying to obtain the semiconductor graphene nanoribbon.
(4) Preparing a high-quality semiconductor graphene nanoribbon:
and (4) annealing the semiconductor graphene nanoribbon obtained in the step (3) at a high temperature of 800 ℃ for 6 hours in a nitrogen atmosphere, and naturally cooling to room temperature to obtain the high-quality semiconductor graphene nanoribbon.
Comparative example 1
A preparation method of a graphene nanoribbon comprises the following steps:
(1) 5mg of single-walled carbon nanotubes with a diameter of 1.3nm were calcined in a resistance furnace at 400 ℃ for 2 hours.
(2) 0.2mg of calcined single-walled carbon nanotube was weighed and added to 2mL of 0.025mg/mL aqueous solution of sodium dodecylbenzenesulfonate.
(3) Ultrasonic treatment is carried out for 8 hours (the ultrasonic power is 60W, the ultrasonic frequency is 40KHz), then standing is carried out for 1 hour, 1mL of supernatant is taken out, and the supernatant is filtered by a polytetrafluoroethylene filter membrane and naturally air-dried to obtain the product.
In the comparative example, potassium permanganate is not added for oxidation reaction, the photoluminescence spectrum of the obtained product is shown in fig. 9, and as can be seen from fig. 9, the final product is still a single-walled carbon nanotube, and a semiconductor graphene nanoribbon cannot be obtained.
Comparative example 2
A preparation method of a graphene nanoribbon comprises the following steps:
(1) preparing single-walled carbon nanotube suspension:
annealing 50mg of single-walled carbon nanotubes with the diameter of 1.3nm in air at 300 ℃ for 30 minutes to effectively remove amorphous carbon mixed in the single-walled carbon nanotubes; and then adding the annealed single-walled carbon nanotube into 50mL of concentrated sulfuric acid with the mass fraction of 98wt%, and stirring for 2 hours to obtain a single-walled carbon nanotube suspension.
(2) Preparing the defective single-walled carbon nanotubes:
gradually adding 12.5mg of potassium permanganate into the single-walled carbon nanotube suspension obtained in the step (1), and reacting for 30 minutes at 45 ℃; after the reaction is completed, the obtained reaction solution is poured into 200mL of ice water, and then is filtered by a polytetrafluoroethylene filter membrane and naturally air-dried to obtain the single-walled carbon nanotube with defects.
(3) Dispersing 20mg of the single-walled carbon nanotubes with defects obtained in the step (2) in 200mL of sodium dodecyl benzene sulfonate aqueous solution with the mass fraction of 1%, carrying out ultrasonic treatment for 60 minutes, wherein the ultrasonic power is 60W, the ultrasonic frequency is 40KHz, filtering by using a polytetrafluoroethylene filtering film, naturally air-drying, annealing the obtained product at the high temperature of 600 ℃ for 6 hours in a nitrogen atmosphere, and naturally cooling to the room temperature to obtain the final product.
The mass ratio of potassium permanganate to single-walled carbon nanotube in the comparative example is 1: 4, the proportion of the single-walled carbon nanotubes is too high, the photoluminescence spectrum of the obtained final product is shown in fig. 10, and as can be seen from fig. 10, the obtained final product is still the single-walled carbon nanotubes, and the graphene nanoribbon cannot be obtained.
Claims (6)
1. A preparation method of a semiconductor graphene nanoribbon comprises the following steps:
(1) preparing single-walled carbon nanotube suspension:
annealing the single-walled carbon nanotube in air, adding the single-walled carbon nanotube into concentrated sulfuric acid, and stirring to obtain a single-walled carbon nanotube suspension; the diameter of the single-walled carbon nanotube is 1-2 nanometers; the annealing temperature is 300-350 ℃, and the annealing time is 30-60 minutes;
(2) preparing the defective single-walled carbon nanotubes:
adding potassium permanganate into the single-walled carbon nanotube suspension obtained in the step (1) to react; after the reaction is finished, pouring the reaction liquid into ice water, filtering and drying to obtain the single-walled carbon nanotube with defects; the mass ratio of the potassium permanganate to the single-walled carbon nanotube is 1: 2;
(3) preparing a semiconductor graphene nanoribbon:
adding the single-walled carbon nanotube with defects obtained in the step (2) into a sodium dodecyl benzene sulfonate aqueous solution for ultrasonic treatment, and then filtering and drying to obtain a semiconductor graphene nanoribbon;
(4) preparing a high-quality semiconductor graphene nanoribbon:
performing high-temperature annealing on the semiconductor graphene nanoribbon obtained in the step (3) in an inert atmosphere to obtain a high-quality semiconductor graphene nanoribbon; the obtained high-quality semiconductor graphene nanoribbon is used for preparing a field effect transistor.
2. The method for preparing the semiconductor graphene nanoribbon according to claim 1, wherein the mass fraction of the concentrated sulfuric acid in the step (1) is 98 wt%; the mass volume ratio of the single-walled carbon nanotube to concentrated sulfuric acid is 1 mg: 1-3 mL; the stirring time is 2-6 hours.
3. The method for preparing the semiconductor graphene nanoribbon according to claim 1, wherein the reaction temperature in the step (2) is 45-60 ℃ and the reaction time is 30-60 minutes; the volume ratio of the ice water to the reaction liquid is 4-16: 1; the filtration is performed by using a polytetrafluoroethylene filtration film; the drying is natural air drying.
4. The method for preparing the semiconductor graphene nanoribbon according to claim 1, wherein the mass fraction of the sodium dodecyl benzene sulfonate aqueous solution in the step (3) is 1-3%; the mass volume ratio of the single-walled carbon nanotube with defects to the sodium dodecyl benzene sulfonate aqueous solution is 1 mg: 10-50 mL.
5. The method for preparing the semiconductor graphene nanoribbon according to claim 1, wherein the ultrasonic treatment time in the step (3) is 60 to 90 minutes; the filtration is performed by using a polytetrafluoroethylene filtration film; the drying is natural air drying.
6. The method for preparing a semiconducting graphene nanoribbon according to claim 1, wherein the inert atmosphere in the step (4) is argon or nitrogen; the high-temperature annealing temperature is 600-800 ℃, and the high-temperature annealing time is 6-8 hours.
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