CN113140640A - Efficient back reflection crystalline silicon heterojunction solar cell and preparation method thereof - Google Patents

Efficient back reflection crystalline silicon heterojunction solar cell and preparation method thereof Download PDF

Info

Publication number
CN113140640A
CN113140640A CN202110413537.0A CN202110413537A CN113140640A CN 113140640 A CN113140640 A CN 113140640A CN 202110413537 A CN202110413537 A CN 202110413537A CN 113140640 A CN113140640 A CN 113140640A
Authority
CN
China
Prior art keywords
film
crystalline silicon
deposited
solar cell
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202110413537.0A
Other languages
Chinese (zh)
Other versions
CN113140640B (en
Inventor
张丽平
姚宇波
刘正新
刘文柱
石建华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Microsystem and Information Technology of CAS
Original Assignee
Shanghai Institute of Microsystem and Information Technology of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Microsystem and Information Technology of CAS filed Critical Shanghai Institute of Microsystem and Information Technology of CAS
Priority to CN202110413537.0A priority Critical patent/CN113140640B/en
Publication of CN113140640A publication Critical patent/CN113140640A/en
Application granted granted Critical
Publication of CN113140640B publication Critical patent/CN113140640B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to a high-efficiency back reflection crystalline silicon heterojunction solar cell, which comprises a heterojunction main body structure and a back reflection structure, wherein the heterojunction main body structure comprises an n-type crystalline silicon substrate serving as an absorption layer, and the heterojunction main body structure is provided with a window layer and a back field layer which are of symmetrical structures; the back reflection structure comprises a first dielectric film and a first metal film, the first dielectric film is deposited on the back field TCO film, and the first metal film is deposited on the first dielectric film. The invention also relates to a preparation method of the high-efficiency back reflection crystalline silicon heterojunction solar cell. According to the efficient back reflection crystalline silicon heterojunction solar cell, the short-circuit current density of a heterojunction main body structure can be improved, the conversion efficiency is improved, the spectral response of the efficient back reflection crystalline silicon heterojunction solar cell to a long wave band is obviously increased, the absorption loss of natural light is reduced, and the higher conversion efficiency is obtained.

Description

Efficient back reflection crystalline silicon heterojunction solar cell and preparation method thereof
Technical Field
The invention relates to a solar cell, in particular to a high-efficiency back reflection crystalline silicon heterojunction solar cell and a preparation method thereof.
Background
Energy is a national incentive to live and develop. In the era of increasingly exhausted fossil energy and prominent environmental problems, the development of novel alternative energy sources can provide powerful guarantee for the sustainable development of national economy. Solar energy can be stably and continuously output, and is more competitive in clean energy. At present, crystalline silicon (c-Si) components in various configurations account for more than 90% of market share, and efficient components have absolute advantages in photovoltaic system installation from the aspects of power generation and cost saving. The high-efficiency crystalline silicon solar cell is obtained as a basis for obtaining high-efficiency components, and the development of the high-efficiency crystalline silicon solar cell can obtain the components with higher efficiency. The crystalline Silicon Heterojunction (SHJ) solar cell is obtained from a numerous-polycrystal silicon solar cell by virtue of the advantages of low-temperature preparation process (lower than 200 ℃), high open-circuit voltage, low temperature coefficient, good illumination stability and the like, and becomes a development hotspot of a high-efficiency crystalline silicon solar cell. Although the SHJ battery obtains extremely high open-circuit voltage by utilizing the excellent passivation effect of the amorphous silicon film, the crystalline silicon has low absorption coefficient at 900-1200nm, and the conventional SHJ battery has a large amount of light escape loss, so that the improvement of the short-circuit current density of the SHJ battery is limited, and the improvement of the conversion efficiency is also limited.
Disclosure of Invention
In order to solve the problem that only a small part of light is absorbed by a cell when the SHJ cell is irradiated by sunlight in the prior art, the invention provides a high-efficiency back reflection crystalline silicon heterojunction solar cell and a preparation method thereof.
The high-efficiency back reflection crystalline silicon heterojunction solar cell comprises a heterojunction main structure and a back reflection structure, wherein the heterojunction main structure comprises an n-type crystalline silicon substrate serving as an absorption layer, and the n-type crystalline silicon substrate is provided with a window layer (namely a first surface) and a back field layer (namely a second surface) which are symmetrically structured; the back reflection structure comprises a first dielectric film and a first metal film, wherein the first dielectric film is deposited on the back field TCO film, and the first metal film is deposited on the first dielectric film.
Through the back reflection structure, the high-efficiency back reflection crystalline silicon heterojunction solar cell can improve the short-circuit current density of the heterojunction main body structure and improve the conversion efficiency, so that the spectral response of the high-efficiency back reflection crystalline silicon heterojunction solar cell to a long-wave band is obviously increased, the absorption loss of natural light is reduced, namely the escape loss of incident light is reduced, and the higher conversion efficiency is obtained. Specifically, the first dielectric film and the first metal film can reflect light back to the n-type crystalline silicon substrate serving as the absorption layer, and the long-wave band spectral response of the efficient back reflection crystalline silicon heterojunction solar cell is effectively improved.
Preferably, the refractive index of the first dielectric film is smaller than that of the back field TCO film, and the absorption coefficient k of the solar cell with spectral response in the high-efficiency back reflection crystalline silicon heterojunction is 0 in a wave band of 300nm-1200 nm.
Preferably, the heterojunction body structure further comprises: the window intrinsic amorphous silicon film is deposited on a window layer of an n-type crystalline silicon substrate, the n-type doped amorphous silicon film, the window TCO film (namely the window transparent conductive oxide film) and the window metal grid are sequentially deposited on the window intrinsic amorphous silicon film, the back field intrinsic amorphous silicon film is deposited on a back field layer of the n-type crystalline silicon substrate, the p-type doped amorphous silicon film, the back field TCO film and the back field metal grid are sequentially deposited on the back field intrinsic amorphous silicon film
Preferably, the TCO films (i.e., window TCO film and back field TCO film) are TCO films comprising an indium base or zinc oxide base, respectively. In a preferred embodiment, the material of the TCO film is Indium Tin Oxide (ITO), indium tungsten oxide (IWO), Indium Gallium Oxide (IGO), or the like.
Preferably, the back reflection structure further includes a second dielectric film deposited on the back field metal gate and a second metal film deposited on the second dielectric film.
Preferably, the refractive index of the second dielectric film is smaller than that of the back field TCO film, and the absorption coefficient k of the solar cell with spectral response in the high-efficiency back reflection crystalline silicon heterojunction is 0 in the wave band of 300nm-1200 nm. It should be understood that the second dielectric film is selected to be the same material as the first dielectric film due to being formed simultaneously in one step, but this is by way of example only and not limitation. In a preferred embodiment, the refractive index of the back field TCO film is 2.0, and the refractive index of the dielectric films (the first dielectric film and the second dielectric film) is less than 2.0. In a preferred embodiment, the material of the dielectric film is silicon oxide, silicon nitride, titanium oxide, aluminum oxide, or magnesium fluoride.
Preferably, the thickness of the dielectric films (the first dielectric film and the second dielectric film) is 1 to 300 nm. It should be understood that the dielectric film functions to block the back field TCO film from directly contacting the first metal film, theoretically only 1nm of the dielectric film is needed to effectively avoid direct contact, the upper limit is set to 300nm to avoid the influence of too thick dielectric film on the conductivity of the back field metal gate, as long as the back field TCO film is effectively blocked from directly contacting the first metal film, the reflective characteristic of the first metal film on the long-wavelength band light can be fully exerted, and the absorption of the solar cell on the long-wavelength band light is improved. Obviously, the thickness of the dielectric film is far less than that of the back field metal gate (the thickness of the main gate is 10-50 μm, and the thickness of the fine gate is about 1 μm), and the carrier collection of the metal gate is not influenced.
Preferably, the thickness of the first metal thin film and/or the second metal thin film is 200nm to 1000 nm. In fact, the metal thin films (i.e., the first metal thin film and the second metal thin film) are materials with good conductivity, and have the capability of efficiently reflecting and efficiently collecting carriers. Preferably, the thickness of the metal thin film is 300nm to 400 nm. It should be understood that the metal thin film has very excellent conductivity, and needs to have excellent reflection characteristics when used in a back reflection structure, when the thickness of the metal thin film is greater than 200nm, the metal thin film can reach a reflectivity of 90% or more in the 900nm-1200nm band, and as the thickness increases, the reflectivity gradually approaches 100%, in the embodiment, the average reflectivity of the 400nm metal silver thin film in the 900nm-1200nm band reaches 98%, and the upper limit is set to 1000nm, i.e. 1 μm, because the thickness of the fine grid in the back field metal grid is about 1 μm, theoretically, the thickness of the metal thin film has no upper limit, and the upper limit of 1 μm is added in view of resource waste. In a preferred embodiment, the metal film is gold, silver, aluminum, or copper.
The invention provides a preparation method of a high-efficiency back reflection crystalline silicon heterojunction solar cell, which comprises the following steps: s1, providing a heterojunction main body structure, wherein the heterojunction main body structure comprises an n-type crystalline silicon substrate serving as an absorption layer, a window layer and a back field layer which are of symmetrical structures, and a back field TCO film is connected to the back field layer of the n-type crystalline silicon substrate; s2, depositing a first dielectric film on the back field TCO film; s3, depositing a first metal film on the first dielectric film.
Preferably, in step S1, a window intrinsic amorphous silicon film is deposited on the window layer of the n-type crystalline silicon substrate, an n-type doped amorphous silicon film, a window TCO film and a window metal gate are sequentially deposited on the window intrinsic amorphous silicon film, a back field intrinsic amorphous silicon film is deposited on the back field layer of the n-type crystalline silicon substrate, and a p-type doped amorphous silicon film, a back field TCO film and a back field metal gate are sequentially deposited on the back field intrinsic amorphous silicon film.
Preferably, the n-type crystalline silicon substrate in step S1 is a crystalline silicon substrate with a clean surface obtained by etching cleaning. In a preferred embodiment, after surface texturing is carried out on n-type crystalline silicon by using NaOH and KOH alkaline solution, an RCA wet chemical cleaning method is used for cleaning to obtain an n-type crystalline silicon substrate with a clean surface.
Preferably, in step S1, a window intrinsic amorphous silicon thin film is deposited on the window layer, an n-type doped amorphous silicon thin film is deposited on the window intrinsic amorphous silicon thin film, a back field intrinsic amorphous silicon thin film is deposited on the back field layer, and a p-type doped amorphous silicon thin film is deposited on the back field intrinsic amorphous silicon thin film by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.
Preferably, in step S1, a window TCO film is deposited on the n-type doped amorphous silicon film and a back field TCO film is deposited on the p-type doped amorphous silicon film by using a Reactive Plasma Deposition (RPD) method.
Preferably, in step S1, a screen printing method is used to fabricate a window metal gate on the window TCO film and a back field metal gate on the back field TCO film.
Preferably, a second dielectric film is deposited on the back field metal gate in step S2, and a second metal film is deposited on the second dielectric film in step S3.
Preferably, in step S2, a first dielectric film is deposited on the back field TCO film and a second dielectric film is deposited on the back field metal gate by using a plasma enhanced chemical vapor deposition, magnetron sputtering, vacuum evaporation coating, electron beam evaporation and/or atomic layer deposition.
Preferably, in step S3, a first metal film is deposited on the first dielectric film and a second metal film is deposited on the second dielectric film by magnetron sputtering, vacuum evaporation coating, electron beam evaporation, and/or physical vapor deposition.
Preferably, the method of making further comprises characterizing the dielectric films (i.e., the first dielectric film and the second dielectric film) using an ellipsometry test. Specifically, the refractive index and the absorption coefficient of the dielectric thin film are fitted and calculated by an equivalent medium theory. It should be understood that the ellipsometer is an effective means for testing and characterizing the refractive index and the absorption coefficient of the thin film, and the invention mainly emphasizes the test calculation of the absorption coefficient k, thereby ensuring that the absorption coefficient k of the dielectric thin film is 0.
According to the preparation method of the high-efficiency back reflection crystalline silicon heterojunction solar cell, the dielectric film and the metal film form a back reflection structure on the back side of the heterojunction main body structure, because the back field TCO film is a semiconductor material and can cause parasitic absorption due to direct contact with metal, if the metal film is directly manufactured, the optical absorption effect of the cell is not enhanced, the back field TCO film and the first metal film are effectively isolated through the non-absorption first dielectric film, the reflection characteristic of the metal film is fully exerted, the collection of cell carriers is not influenced, the dielectric film is not used as a passivation material and only used as a direct isolation material of the TCO film and the metal film, the parasitic absorption caused by the direct contact of the back field TCO film and the metal film is avoided, the reflection characteristic of the metal film to light is fully exerted, the spectral response of the SHJ solar cell 900-1200nm is effectively improved, the method has important significance for further obtaining the high-efficiency silicon heterojunction solar cell and expanding the application field of the high-efficiency silicon heterojunction solar cell. Therefore, the high-efficiency back reflection crystalline silicon heterojunction solar cell can improve the photoelectric conversion efficiency of any solar cell with low long-wave response through the back reflection structure formed by the dielectric film and the metal film. Therefore, the invention can improve the conversion efficiency of the silicon heterojunction solar cell produced in large scale and has high industrial utilization value.
Drawings
FIG. 1 is a schematic structural diagram of a high efficiency back-reflective crystalline silicon heterojunction solar cell according to the present invention;
FIG. 2 shows the ellipsometry spectrometer for SiOxA test fitting result graph of the film refractive index n and the absorption coefficient k;
FIG. 3 is IWO and IWO/SiOxA reflection test chart of the/Ag back reflection structure;
FIG. 4 is a process for preparing SiO by SHJ batteryxQuantum Efficiency (EQE) test plots before and after the/Ag back-reflection structure.
In fig. 1:
101 n type crystalline silicon substrate
102 window intrinsic amorphous silicon thin film
103 n type doped amorphous silicon film
104 back field intrinsic amorphous silicon film
105 p-type doped amorphous silicon film
106 window TCO film
107 back field TCO film
108 window metal gate
109 back field metal gate
110 first dielectric film
111 second dielectric film
112 first metal film
113 a second metal film
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the high efficiency back reflection crystalline silicon heterojunction solar cell according to the present invention comprises an n-type crystalline silicon substrate 101 having a window layer and a back field layer of a symmetric structure; the window intrinsic amorphous silicon film 102 is connected to a window layer of the n-type crystalline silicon substrate 101, and the n-type doped amorphous silicon film 103, the window TCO film 106 and the window metal gate 108 are sequentially connected to the window intrinsic amorphous silicon film 102; the back field intrinsic amorphous silicon film 104 is connected to the back field layer of the n-type crystalline silicon substrate 101, and the p-type doped amorphous silicon film 105, the back field TCO film 107 and the back field metal gate 109 are sequentially connected to the back field intrinsic amorphous silicon film 104; the first dielectric film 110 is connected to the back field TCO film 107; the second dielectric film 111 is connected to the back field metal gate 109; a first metal film 112 is connected to the first dielectric film 110; the second metal film 113 is connected to the second dielectric film 111.
Example 1
The method for manufacturing the high-efficiency back-reflection crystalline silicon heterojunction solar cell according to the embodiment firstly comprises the step of providing an n-type crystalline silicon substrate 101.
The method for manufacturing the high-efficiency back reflection crystalline silicon heterojunction solar cell according to the embodiment is followed by etching and cleaning the n-type crystalline silicon substrate 101. Specifically, the surface texturing is performed by anisotropic etching of the n-type crystalline silicon substrate 101 with an alkali solution such as KOH or NaOH, and then the silicon wafer is cleaned with RCA1 or RCA2 solutions.
The method for manufacturing the high-efficiency back-reflection crystalline silicon heterojunction solar cell according to the embodiment next prepares the window intrinsic amorphous silicon thin film 102 and the n-type doped amorphous silicon thin film 103 on the first surface of the n-type crystalline silicon substrate 101, and then prepares the back-field intrinsic amorphous silicon thin film 104 and the p-type doped amorphous silicon thin film 105 on the second surface opposite to the first surface. Specifically, a window intrinsic amorphous silicon thin film 102, an n-type doped amorphous silicon thin film 103, a back field intrinsic amorphous silicon thin film 104, and a p-type doped amorphous silicon thin film 105 are prepared on an n-type crystalline silicon substrate 101 by vacuum chemical vapor deposition. In a preferred embodiment, the vacuum chemical vapor deposition is a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, the thickness of the window intrinsic amorphous silicon thin film 102 is 5nm, the thickness of the n-type doped amorphous silicon thin film 103 is 8nm, the thickness of the back field intrinsic amorphous silicon thin film 104 is 5nm, and the thickness of the p-type doped amorphous silicon thin film 105 is 10 nm.
The method for manufacturing the high-efficiency back reflection crystalline silicon heterojunction solar cell according to the embodiment further includes manufacturing a window TCO film 106 on the n-type doped amorphous silicon film 103, and manufacturing a back field TCO film 107 on the p-type doped amorphous silicon film 105. Specifically, the TCO films 106 and 107 are prepared by magnetron sputtering, Reactive Plasma Deposition (RPD), and the like, and the material of the TCO films 106 and 107 is any conductive oxide. In a preferred embodiment, the TCO films 106, 107 are formed by Reactive Plasma Deposition (RPD), and tungsten-doped indium oxide (IWO) is selected as the material for the TCO films 106, 107, wherein the deposition thickness is 80 nm.
The method for manufacturing the high-efficiency back reflection crystalline silicon heterojunction solar cell according to the embodiment of the invention then manufactures the window metal grid 108 on the window TCO film 106, and manufactures the back field metal grid 109 on the back field TCO film 107. Specifically, metal gates 108, 109 are fabricated on the TCO films 106, 107, respectively, by a screen printing method. In this embodiment, the metal gates 108 and 109 are silver gates, the main gate of the silver gate is 10-50 μm high, and the fine gate is about 1 μm high.
The method for manufacturing the high-efficiency back-reflection crystalline silicon heterojunction solar cell according to the embodiment further includes manufacturing a first dielectric film 110 on the back-field TCO film 107, and manufacturing a second dielectric film 111 on the back-field metal gate 109. I.e., the dielectric films 110, 111 are prepared in a single operation on top of the back field metal gate 109 and the surface of the back field TCO film 107. Specifically, the dielectric films 110, 111 are prepared by plasma enhanced chemical vapor deposition, magnetron sputtering, vacuum evaporation coating, electron beam evaporation, atomic layer deposition, or the like. In a preferred embodiment, silicon nitride (SiN) is deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD)x) A dielectric thin film formed on the substrate and having a dielectric constant,the deposition thickness was 100 nm.
The preparation method of the high-efficiency back reflection crystalline silicon heterojunction solar cell according to the embodiment is used for testing and characterizing the dielectric films 110 and 111. Specifically, an elliptical polarization spectrometer is adopted for SiNxTesting and characterizing the dielectric film, and carrying out SiN analysis by an equivalent medium theoryxThe refractive index and absorption coefficient of (a) were fitted and calculated.
The method for manufacturing the high-efficiency back-reflection crystalline silicon heterojunction solar cell according to the embodiment deposits a first metal film 112 on the first dielectric film 110, and deposits a second metal film 113 on the second dielectric film 111. I.e. the metal films 112, 113 are prepared in a single operation on the surface of the dielectric films 110, 111. Specifically, the metal films 112 and 113 are prepared by magnetron sputtering, vacuum evaporation coating, electron beam evaporation, physical vapor deposition, or the like. In a preferred embodiment, metallic silver (Ag) is deposited to a thickness of 400nm by vacuum evaporation coating.
Example 2
The method for manufacturing the high-efficiency back-reflection crystalline silicon heterojunction solar cell according to the embodiment firstly comprises the step of providing an n-type crystalline silicon substrate 101.
The method for manufacturing the high-efficiency back reflection crystalline silicon heterojunction solar cell according to the embodiment is followed by etching and cleaning the n-type crystalline silicon substrate 101. Specifically, the surface texturing is performed by anisotropic etching of the n-type crystalline silicon substrate 101 with an alkali solution such as KOH or NaOH, and then the silicon wafer is cleaned with RCA1 or RCA2 solutions.
The method for manufacturing the high-efficiency back-reflection crystalline silicon heterojunction solar cell according to the embodiment next prepares the window intrinsic amorphous silicon thin film 102 and the n-type doped amorphous silicon thin film 103 on the first surface of the n-type crystalline silicon substrate 101, and then prepares the back-field intrinsic amorphous silicon thin film 104 and the p-type doped amorphous silicon thin film 105 on the second surface opposite to the first surface. Specifically, a window intrinsic amorphous silicon thin film 102, an n-type doped amorphous silicon thin film 103, a back field intrinsic amorphous silicon thin film 104, and a p-type doped amorphous silicon thin film 105 are prepared on an n-type crystalline silicon substrate 101 by vacuum chemical vapor deposition. In a preferred embodiment, the vacuum chemical vapor deposition is a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, the thickness of the window intrinsic amorphous silicon thin film 102 is 5nm, the thickness of the n-type doped amorphous silicon thin film 103 is 8nm, the thickness of the back field intrinsic amorphous silicon thin film 104 is 5nm, and the thickness of the p-type doped amorphous silicon thin film 105 is 10 nm.
The method for manufacturing the high-efficiency back reflection crystalline silicon heterojunction solar cell according to the embodiment further includes manufacturing a window TCO film 106 on the n-type doped amorphous silicon film 103, and manufacturing a back field TCO film 107 on the p-type doped amorphous silicon film 105. Specifically, the TCO films 106 and 107 are prepared by magnetron sputtering, Reactive Plasma Deposition (RPD), and the like, and the material of the TCO films 106 and 107 is any conductive oxide. In a preferred embodiment, the TCO films 106, 107 are formed by Reactive Plasma Deposition (RPD), and tungsten-doped indium oxide (IWO) is selected as the material for the TCO films 106, 107, wherein the deposition thickness is 80 nm.
The method for manufacturing the high-efficiency back reflection crystalline silicon heterojunction solar cell according to the embodiment of the invention then manufactures the window metal grid 108 on the window TCO film 106, and manufactures the back field metal grid 109 on the back field TCO film 107. Specifically, metal gates 108, 109 are fabricated on the TCO films 106, 107, respectively, by a screen printing method. In this embodiment, the metal gates 108 and 109 are silver gates, the main gate of the silver gate is 10-50 μm high, and the fine gate is about 1 μm high.
The method for manufacturing the high-efficiency back-reflection crystalline silicon heterojunction solar cell according to the embodiment further includes manufacturing a first dielectric film 110 on the back-field TCO film 107, and manufacturing a second dielectric film 111 on the back-field metal gate 109. I.e., the dielectric films 110, 111 are prepared in a single operation on top of the back field metal gate 109 and the surface of the back field TCO film 107. Specifically, the dielectric films 110, 111 are prepared by plasma enhanced chemical vapor deposition, magnetron sputtering, vacuum evaporation coating, electron beam evaporation, atomic layer deposition, or the like. In a preferred embodiment, silicon oxide (SiO) is deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD)x) And a dielectric film deposited to a thickness of 100 nm.
High efficiency back reflection according to the present embodimentThe preparation method of the crystalline silicon heterojunction solar cell comprises the following step of testing and characterizing the dielectric films 110 and 111. Specifically, an elliptical polarization spectrometer is adopted for SiNxThe dielectric film is tested and characterized, and SiO is subjected to equivalent medium theoryxThe refractive index and absorption coefficient of (a) were fitted and calculated. As shown in FIG. 2, the prepared SiO was aligned using an ellipsometerxTesting and characterizing the film, and testing SiOxAnd (5) performing fitting calculation on the refractive index n and the absorption coefficient k of the film. The test fitting result shows that SiOxThe refractive index of the film at 600nm waveband is 1.45, and the absorption coefficients k at 300-1200nm waveband of the spectral response of the silicon heterojunction cell are all 0, so that the film has non-absorption characteristic.
The method for manufacturing the high-efficiency back-reflection crystalline silicon heterojunction solar cell according to the embodiment deposits a first metal film 112 on the first dielectric film 110, and deposits a second metal film 113 on the second dielectric film 111. I.e. the metal films 112, 113 are prepared in a single operation on the surface of the dielectric films 110, 111. Specifically, the metal films 112 and 113 are prepared by magnetron sputtering, vacuum evaporation coating, electron beam evaporation, physical vapor deposition, or the like. In a preferred embodiment, metallic silver (Ag) is deposited to a thickness of 300nm by vacuum evaporation coating.
As shown in FIG. 3, the IWO film for battery preparation and SiO film preparation were usedxIWO/SiO of/Ag back reflection structurexthe/Ag laminated back reflection structure is subjected to a reflectivity test. The test result shows that IWO/SiOxThe average reflectivity of the/Ag laminated back reflection structure in the 900-1200nm waveband is 90%, and is far larger than the average reflectivity of the IWO film in the 22% waveband, so that the excellent reflection characteristic of the/Ag laminated back reflection structure on long-wavelength light is theoretically more favorable for improving the long-wave spectral response of the SHJ battery.
As shown in FIG. 4, SiO was prepared for SHJ cellsxAnd respectively carrying out quantum efficiency (EQE) tests before and after the/Ag back reflection structure. The test result shows that SiO is preparedxAfter the/Ag back reflection structure, the spectral response of the SHJ battery at the 900-plus 1200nm waveband is obviously improved, and the short-circuit current density calculated according to the External Quantum Efficiency (EQE) is improved by 0.3mA/cm2。
In conclusion, the back reflection structure formed by the dielectric films 110 and 111 and the metal films 112 and 113 prepared by the method of the invention can effectively improve the optical absorption of the silicon heterojunction cell, and particularly the spectral response of the long wave band is obviously improved, thereby effectively improving the short-circuit current density and the conversion efficiency of the silicon heterojunction cell.
The above embodiments are merely preferred embodiments of the present invention, which are not intended to limit the scope of the present invention, and various changes may be made in the above embodiments of the present invention. All simple and equivalent changes and modifications made according to the claims and the content of the specification of the present application fall within the scope of the claims of the present patent application. The invention has not been described in detail in order to avoid obscuring the invention.

Claims (10)

1. The efficient back reflection crystalline silicon heterojunction solar cell is characterized by comprising a heterojunction main structure and a back reflection structure, wherein the heterojunction main structure comprises an n-type crystalline silicon substrate serving as an absorption layer, and the n-type crystalline silicon substrate is provided with a window layer and a back field layer which are of symmetrical structures; the back reflection structure comprises a first dielectric film and a first metal film, the first dielectric film is deposited on the back field TCO film, and the first metal film is deposited on the first dielectric film.
2. The efficient back reflection crystalline silicon heterojunction solar cell as claimed in claim 1, wherein the refractive index of the first dielectric film is less than that of the back field TCO film, and the absorption coefficient k in the 300nm-1200nm band of the spectral response of the efficient back reflection crystalline silicon heterojunction solar cell is 0.
3. The efficient back-reflective crystalline silicon heterojunction solar cell of claim 1, wherein the heterojunction body structure further comprises: the window intrinsic amorphous silicon film is deposited on a window layer of the n-type crystalline silicon substrate, the n-type doped amorphous silicon film, the window TCO film and the window metal grid are sequentially deposited on the window intrinsic amorphous silicon film, the back field intrinsic amorphous silicon film is deposited on a back field layer of the n-type crystalline silicon substrate, and the p-type doped amorphous silicon film, the back field TCO film and the back field metal grid are sequentially deposited on the back field intrinsic amorphous silicon film.
4. The efficient back-reflection crystalline silicon heterojunction solar cell of claim 3, wherein the back-reflection structure further comprises a second dielectric film and a second metal film, the second dielectric film is deposited on the back-field metal gate, and the second metal film is deposited on the second dielectric film.
5. The efficient back-reflection crystalline silicon heterojunction solar cell as claimed in claim 4, wherein the thickness of the first metal film and/or the second metal film is 200nm-1000 nm.
6. The method for preparing a high efficiency back reflection crystalline silicon heterojunction solar cell as claimed in any of claims 1 to 5, wherein the method comprises the steps of:
s1, providing a heterojunction main body structure, wherein the heterojunction main body structure comprises an n-type crystalline silicon substrate serving as an absorption layer, a window layer and a back field layer which are of symmetrical structures, and a back field TCO film is connected to the back field layer of the n-type crystalline silicon substrate;
s2, depositing a first dielectric film on the back field TCO film;
s3, depositing a first metal film on the first dielectric film.
7. The preparation method according to claim 6, wherein in step S1, a window intrinsic amorphous silicon film is deposited on a window layer of the n-type crystalline silicon substrate, an n-type doped amorphous silicon film, a window TCO film and a window metal gate are sequentially deposited on the window intrinsic amorphous silicon film, a back field intrinsic amorphous silicon film is deposited on a back field layer of the n-type crystalline silicon substrate, and a p-type doped amorphous silicon film, a back field TCO film and a back field metal gate are sequentially deposited on the back field intrinsic amorphous silicon film.
8. The method of claim 6, wherein a second dielectric film is deposited on the back field metal gate in step S2, and a second metal film is deposited on the second dielectric film in step S3.
9. The method according to claim 8, wherein the first dielectric film is deposited on the back field TCO film and the second dielectric film is deposited on the back field metal gate by plasma enhanced chemical vapor deposition, magnetron sputtering, vacuum evaporation, electron beam evaporation and/or atomic layer deposition.
10. The method of claim 8, wherein the first metal film is deposited on the first dielectric film and the second metal film is deposited on the second dielectric film by magnetron sputtering, vacuum evaporation coating, electron beam evaporation, and/or physical vapor deposition.
CN202110413537.0A 2021-04-16 2021-04-16 Efficient back reflection crystalline silicon heterojunction solar cell and preparation method thereof Active CN113140640B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110413537.0A CN113140640B (en) 2021-04-16 2021-04-16 Efficient back reflection crystalline silicon heterojunction solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110413537.0A CN113140640B (en) 2021-04-16 2021-04-16 Efficient back reflection crystalline silicon heterojunction solar cell and preparation method thereof

Publications (2)

Publication Number Publication Date
CN113140640A true CN113140640A (en) 2021-07-20
CN113140640B CN113140640B (en) 2022-11-29

Family

ID=76812662

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110413537.0A Active CN113140640B (en) 2021-04-16 2021-04-16 Efficient back reflection crystalline silicon heterojunction solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN113140640B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114242834A (en) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 Production integration equipment and method for copper grid line heterojunction solar cell

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040221887A1 (en) * 2003-05-09 2004-11-11 Canon Kabushiki Kaisha Photovoltaic element and method of forming photovoltaic element
US20110140106A1 (en) * 2009-12-10 2011-06-16 Leonard Forbes Backside naoscale texturing to improve IR response of silicon solar cells and photodetectors
KR20120081812A (en) * 2011-01-12 2012-07-20 삼성전자주식회사 Photodiode device based on wide band-gap material layer, and back side illumination(bsi) cmos image sensor and solar cell comprising the photodiode device
CN102931267A (en) * 2012-11-20 2013-02-13 蚌埠玻璃工业设计研究院 Silicon-based heterojunction solar cell and preparation method thereof
CN104538476A (en) * 2015-01-21 2015-04-22 中电投西安太阳能电力有限公司 Silicon nano-wire suede based heterojunction solar battery and preparation method thereof
CN205959994U (en) * 2016-07-26 2017-02-15 福建钧石能源有限公司 Heterojunction solar cell of single face polishing
CN107453052A (en) * 2017-08-11 2017-12-08 中国科学院上海微***与信息技术研究所 A kind of electromagnetic absorption Meta Materials
CN112331741A (en) * 2020-11-04 2021-02-05 东方日升（常州）新能源有限公司 Crystalline silicon solar cell, crystalline silicon solar cell module and manufacturing method of crystalline silicon solar cell module

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040221887A1 (en) * 2003-05-09 2004-11-11 Canon Kabushiki Kaisha Photovoltaic element and method of forming photovoltaic element
US20110140106A1 (en) * 2009-12-10 2011-06-16 Leonard Forbes Backside naoscale texturing to improve IR response of silicon solar cells and photodetectors
KR20120081812A (en) * 2011-01-12 2012-07-20 삼성전자주식회사 Photodiode device based on wide band-gap material layer, and back side illumination(bsi) cmos image sensor and solar cell comprising the photodiode device
CN102931267A (en) * 2012-11-20 2013-02-13 蚌埠玻璃工业设计研究院 Silicon-based heterojunction solar cell and preparation method thereof
CN104538476A (en) * 2015-01-21 2015-04-22 中电投西安太阳能电力有限公司 Silicon nano-wire suede based heterojunction solar battery and preparation method thereof
CN205959994U (en) * 2016-07-26 2017-02-15 福建钧石能源有限公司 Heterojunction solar cell of single face polishing
CN107453052A (en) * 2017-08-11 2017-12-08 中国科学院上海微***与信息技术研究所 A kind of electromagnetic absorption Meta Materials
CN112331741A (en) * 2020-11-04 2021-02-05 东方日升（常州）新能源有限公司 Crystalline silicon solar cell, crystalline silicon solar cell module and manufacturing method of crystalline silicon solar cell module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114242834A (en) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 Production integration equipment and method for copper grid line heterojunction solar cell

Also Published As

Publication number Publication date
CN113140640B (en) 2022-11-29

Similar Documents

Publication Publication Date Title
Yang et al. Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficiencies
US6870088B2 (en) Solar battery cell and manufacturing method thereof
US20090165845A1 (en) Back contact module for solar cell
CN109004053A (en) The crystalline silicon of double-side photic/film silicon heterojunction solar battery and production method
Gerling et al. Back junction n-type silicon heterojunction solar cells with V2O5 hole-selective contact
KR20120063324A (en) Bifacial solar cell
CN111640815B (en) Preparation method of high-efficiency double-sided light-receiving flexible silicon heterojunction solar cell
Untila et al. ITO/SiOx/n-Si heterojunction solar cell with bifacial 16.6%/14.6% front/rear efficiency produced by ultrasonic spray pyrolysis: Effect of conditions of SiOx growth by wet-chemical oxidation
CN105981180B (en) Photo-electric conversion element and the solar module for possessing the photo-electric conversion element
KR101886818B1 (en) Method for manufacturing of heterojunction silicon solar cell
CN113140640B (en) Efficient back reflection crystalline silicon heterojunction solar cell and preparation method thereof
US20100212721A1 (en) Thin film type solar cell and method for manufacturing the same
Dao et al. High-efficiency heterojunction with intrinsic thin-layer solar cells: a review
JPH11150282A (en) Photovoltaic element and its manufacture
Guha et al. Science and technology of amorphous silicon alloy photovoltaics
KR20120003732A (en) Solar cell
CN111029424B (en) Silicon-based double-diode double-sided solar cell and preparation method thereof
TW201822371A (en) Solar cell with heterojunction and method for manufacturing the same
KR20110068508A (en) Solar cells having structure with transparent conduction oxide layer/metal thin film and methods of fabricating the same
KR20130057286A (en) Photovoltaic device and manufacturing method thereof
Rech et al. Texture etched ZnO: Al films as front contact and back reflector in amorphous silicon pin and nip solar cells
Wang et al. Improvement of bifacial heterojunction silicon solar cells with light-trapping asymmetrical bifacial structures
JPS5943101B2 (en) Amorphous semiconductor solar cell
Al Eghfeli et al. Demonstration of aluminum doped ZnO as anti-reflection coating
TWI812265B (en) Hot carrier solar cell and tandem solar cell

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant