CN113136255A - Cooling liquid for diamond wire cutting solar silicon wafer and preparation method - Google Patents
Cooling liquid for diamond wire cutting solar silicon wafer and preparation method Download PDFInfo
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- CN113136255A CN113136255A CN202010049014.8A CN202010049014A CN113136255A CN 113136255 A CN113136255 A CN 113136255A CN 202010049014 A CN202010049014 A CN 202010049014A CN 113136255 A CN113136255 A CN 113136255A
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- polyoxyethylene ether
- cooling liquid
- diamond wire
- surfactant
- diol
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 48
- 239000010703 silicon Substances 0.000 title claims abstract description 48
- 238000005520 cutting process Methods 0.000 title claims abstract description 37
- 239000000110 cooling liquid Substances 0.000 title claims abstract description 33
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 29
- 239000010432 diamond Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 229920000056 polyoxyethylene ether Polymers 0.000 claims abstract description 41
- 229940051841 polyoxyethylene ether Drugs 0.000 claims abstract description 41
- 229920000570 polyether Polymers 0.000 claims abstract description 40
- 239000004721 Polyphenylene oxide Substances 0.000 claims abstract description 36
- 239000004094 surface-active agent Substances 0.000 claims abstract description 32
- 239000002904 solvent Substances 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000012431 wafers Nutrition 0.000 claims description 34
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 24
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 23
- -1 alkyne diol Chemical class 0.000 claims description 18
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 16
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 12
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical group [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 claims description 11
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 9
- 150000002170 ethers Chemical class 0.000 claims description 8
- CRMIJUGSUHPVNT-UHFFFAOYSA-N 2,4,7,9-tetramethyldec-5-yne Chemical compound CC(C)CC(C)C#CC(C)CC(C)C CRMIJUGSUHPVNT-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- ILLHQJIJCRNRCJ-UHFFFAOYSA-N octylacetylene Natural products CCCCCCCCC#C ILLHQJIJCRNRCJ-UHFFFAOYSA-N 0.000 claims description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 3
- AEDZKIACDBYJLQ-UHFFFAOYSA-N ethane-1,2-diol;hydrate Chemical compound O.OCCO AEDZKIACDBYJLQ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001345 alkine derivatives Chemical class 0.000 claims description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000012634 fragment Substances 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 150000002009 diols Chemical class 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M169/00—Lubricating compositions characterised by containing as components a mixture of at least two types of ingredient selected from base-materials, thickeners or additives, covered by the preceding groups, each of these compounds being essential
- C10M169/04—Mixtures of base-materials and additives
- C10M169/044—Mixtures of base-materials and additives the additives being a mixture of non-macromolecular and macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/02—Hydroxy compounds
- C10M2207/021—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2207/022—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms containing at least two hydroxy groups
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/04—Ethers; Acetals; Ortho-esters; Ortho-carbonates
- C10M2207/046—Hydroxy ethers
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
Abstract
The invention discloses a water-based cooling liquid for diamond wire cutting and a preparation method thereof, wherein the cooling liquid takes an alkynediol surfactant as a main component and is matched with a composition of surfactants such as alkynediol polyoxyethylene ether, polyethers and organic silicon polyether and a solvent, the dynamic surface tension of the cooling liquid is lower than 45mN/m (0.1%), and the cooling liquid with low surface tension can reduce the proportion of splinters and fragments in the silicon wafer cutting process, improve the service life of a diamond wire, have a good cleaning effect on the silicon wafer and cause no dirty wafer.
Description
Technical Field
The invention belongs to the technical field of cutting processing in the photovoltaic industry, and particularly relates to a cooling liquid for diamond wire cutting of a solar silicon wafer.
Background
Photovoltaic power generation is a clean and efficient new energy, and the development of photovoltaic power generation shows a blowout trend in recent years. In the cost composition of the photovoltaic module, a silicon wafer is still a key link in a value chain of the photovoltaic industry, and the material of the silicon wafer is divided into monocrystalline silicon and polycrystalline silicon. The slicing method includes outer circle cutting, inner circle cutting and linear cutting. In the slicing step, the silicon material loss is serious, about 40% of silicon material can be wasted by the mortar steel wire cutting technology, and residual liquid after cutting is difficult to recycle. At present, nearly 30% of silicon materials are wasted by the mainstream water-based diamond wire cutting technology, but the environmental protection performance of a water-based cooling liquid system is greatly improved. However, in the prior art, the surface tension of the cooling liquid used for cutting the solar silicon wafer by the diamond wire is higher, and the higher surface tension can increase the surface free energy during the cutting of the silicon wafer, so that the proportion of splinters and fragments is increased, and the service life of the diamond wire is shortened. Meanwhile, the technical problems that the cut silicon wafer is difficult to clean, poor in cleanliness and easy to generate color difference exist. Therefore, in view of the development demand of photovoltaic power generation technology, the cutting technology of silicon wafers has made great progress, but still has a great improvement space, and is a key point of constant attention in the whole industry.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a cooling liquid for cutting a solar silicon wafer by using a diamond wire.
The invention is realized by the following technical scheme:
the cooling liquid for cutting the solar silicon wafer by the diamond wire comprises the following components in parts by weight: 20-30% of alkynediol surfactant, 10-80% of alkynediol polyoxyethylene ether, 0-50% of isomeric alcohol polyether, 0-30% of organic silicon polyether and 0-10% of solvent.
In the above technical solution, the alkynediol surfactant is decyne diol and/or dodecylene diol.
In the technical scheme, the alkynediol polyoxyethylene ether is 2,5,8, 11-tetramethyl-6-dodecaalkynol-5, 8-diol polyoxyethylene ether and/or a 2,4,7, 9-tetramethyl-5-decynediol-4, 7-diol polyoxyethylene ether derivative, the ethylene oxide mass fraction of the 2,5,8, 11-tetramethyl-6-dodecaalkynol-5, 8-diol polyoxyethylene ether is 10-60%, and the ethylene oxide mass fraction of the 2,4,7, 9-tetramethyl-5-decynediol-4, 7-diol polyoxyethylene ether derivative is 10-80%.
In the technical scheme, the isomeric alcohol polyether is an isomeric alcohol polyether surfactant of C8-C13, and the mass fraction of ethylene oxide in the isomeric alcohol polyether surfactant of C8-C13 is 30-40%.
In the technical scheme, the organic silicon polyether is trisiloxane polyoxyethylene ether, and the mass fraction of ethylene oxide in the trisiloxane polyoxyethylene ether is 5-8%.
In the above technical scheme, the solvent is at least one of ethylene glycol, propylene glycol, butyl ether glycol or water.
A preparation method of a cooling liquid for a diamond wire cutting solar silicon wafer comprises the following steps of heating an alkynediol surfactant to 50-65 ℃, sequentially adding alkynediol polyoxyethylene ether, heterogeneous alcohol polyether and organic silicon polyether into the alkynediol surfactant, stirring for 15-20 minutes at 40-50 ℃, adding a solvent, uniformly stirring, and cooling to normal temperature to obtain the cooling liquid for the diamond wire cutting solar silicon wafer.
In the technical scheme, the acetylene glycol surfactant accounts for 20-30 wt%, the acetylene glycol polyoxyethylene ether accounts for 10-80 wt%, the isomeric alcohol polyether accounts for 0-50 wt%, the organic silicon polyether accounts for 0-30 wt%, and the solvent accounts for 0-10 wt% in the cooling liquid for the diamond wire cutting solar silicon wafer; the alkyne diol surfactant is decyne diol and/or dodecyl alkyne alcohol; the acetylene glycol polyoxyethylene ether is 2,5,8, 11-tetramethyl-6-dodecaacetylene alcohol-5, 8-diol polyoxyethylene ether and/or a 2,4,7, 9-tetramethyl-5 decyne glycol-4, 7-diol polyoxyethylene ether derivative, the ethylene oxide mass fraction of the 2,5,8, 11-tetramethyl-6-dodecaacetylene alcohol-5, 8-diol polyoxyethylene ether is 10-60%, and the ethylene oxide mass fraction of the 2,4,7, 9-tetramethyl-5 decyne glycol-4, 7-diol polyoxyethylene ether derivative is 10-80%.
In the technical scheme, the isomeric alcohol polyether is an isomeric alcohol polyether surfactant of C8-C10, and the mass fraction of ethylene oxide in the isomeric alcohol polyether surfactant of C8-C10 is 30-40%; the organic silicon polyether is trisiloxane polyoxyethylene ether, and the mass fraction of ethylene oxide in the trisiloxane polyoxyethylene ether is 5-8%; the solvent is at least one of ethylene glycol, propylene glycol, ethylene glycol butyl ether or water.
A preparation method of a cooling liquid for a diamond wire cutting solar silicon wafer comprises the following steps of heating an alkynediol surfactant to 60 ℃ to be in a transparent state, sequentially adding alkynediol polyoxyethylene ether, an isomeric alcohol polyether surfactant and trisiloxane polyoxyethylene ether into the alkynediol surfactant, starting a stirrer, keeping the temperature at 40 ℃, continuously stirring for 15 minutes, adding a conventional solvent, uniformly stirring, and cooling to the normal temperature to obtain the cooling liquid for the diamond wire cutting solar silicon wafer.
The invention has the advantages and beneficial effects that: the invention provides a cooling liquid for cutting a solar silicon wafer by a diamond wire, which still has a dynamic surface tension lower than 45mN/m (0.1%) in a highly diluted state such as 1:300 or 1:500 diluted state, has a cleaning function for the silicon wafer, and does not dirty the wafer.
Detailed Description
In order to make the technical solution of the present invention better understood, the technical solution of the present invention is further described below with reference to specific examples.
Solvents referred to in the examples
Examples 1 to 10
(1) Taking materials according to the mixture ratio of the following table 1 and preparing according to the parameters of the following table 2, taking an alkynediol surfactant, heating the alkynediol surfactant to 65-75 ℃ to be in a transparent state, sequentially adding alkynediol polyoxyethylene ether, an isomeric alcohol polyether surfactant and trisiloxane polyoxyethylene ether, starting a stirrer, keeping the temperature at 40-50 ℃, continuously stirring for 15-20 minutes, and adding a conventional solvent to obtain transparent liquid with the appearance, namely the cooling liquid of the embodiments 1-10; the cooling liquids of comparative examples 1 to 3 were obtained by taking the materials in the proportions shown in Table 3, and the dynamic surface tension measurement and the cleaning property examination were performed on the cooling liquids obtained in examples 1 to 10 and comparative examples 1 to 3.
(2) Dynamic surface tension measurement: the dynamic surface tension of the above dilution was measured by uniformly mixing a water-based coolant with deionized water at a ratio of 1:300 using a dynamic surface tension meter BP-50 of Kruss, Germany.
Surface tension is gradually accelerated from 1 bubble/second to 10 bubbles/second depending on the bubbling frequency, and the industry generally takes 1 bubble/second as data of static surface tension and 6 bubbles/second as data of dynamic surface tension. 6 bubbles/sec higher was observed as a dynamic tension trend.
(3) Cleaning property: and drying the silicon wafer subjected to linear cutting, and observing the surface cleanliness of the silicon wafer.
The results of dynamic expression of the tensile force and the cleaning ability are shown in Table 4.
TABLE 1 proportions of the components of examples 1-10
TABLE 2 heating temperature, holding temperature and stirring time in examples 1 to 10
TABLE 3 composition of comparative examples 1 to 3
TABLE 4 results of surface tension and cleanability measurements of examples and comparative examples
The staining was severe: x; basic cleaning: Δ; very clean: very good
As can be seen from Table 4, the cooling liquid of the present invention has the obvious effect of reducing the surface tension of the aqueous coating, and has a good cleaning effect on the silicon wafer.
The selected raw materials of the discovery are as follows: acetylenic diols, acetylenic diol polyethers, isomeric alcohol polyethers, silicone polyethers
Surfactants determine the dynamic surface tension of water-based systems
The model selection principle is as follows: the acetylene glycol polyether is a commodity grafted with different alkoxy groups by the acetylene glycol, so that the problem of low solubility of the acetylene glycol in an aqueous system is solved, the acetylene glycol polyether has the advantage of good compatibility in the aqueous system, the dynamic surface tension of the aqueous system is reduced to a greater extent, and the lubricity and mass transfer efficiency of the aqueous cutting fluid are improved. The organic silicon polyether has good flow promoting effect, has good synergistic effect after being compounded with the alkynediol and the alkynediol polyether, and can more effectively exert respective effect.
The invention has been described in an illustrative manner, and it is to be understood that any simple variations, modifications or other equivalent changes which can be made by one skilled in the art without departing from the spirit of the invention fall within the scope of the invention.
Claims (10)
1. The cooling liquid for the diamond wire-electrode cutting solar silicon wafer is characterized in that: the cooling liquid comprises the following components in parts by weight: 20-30% of alkynediol surfactant, 10-80% of alkynediol polyoxyethylene ether, 0-50% of isomeric alcohol polyether, 0-30% of organic silicon polyether and 0-10% of solvent.
2. The cooling liquid for diamond wire-electrode cutting solar silicon wafers as claimed in claim 1, wherein: the alkyne diol surfactant is decyne diol and/or dodecyl alkyne diol.
3. The cooling liquid for diamond wire-electrode cutting solar silicon wafers as claimed in claim 1, wherein: the acetylene glycol polyoxyethylene ether is 2,5,8, 11-tetramethyl-6-dodecaacetylene alcohol-5, 8-diol polyoxyethylene ether and/or a 2,4,7, 9-tetramethyl-5 decyne glycol-4, 7-diol polyoxyethylene ether derivative, the ethylene oxide mass fraction of the 2,5,8, 11-tetramethyl-6-dodecaacetylene alcohol-5, 8-diol polyoxyethylene ether is 10-60%, and the ethylene oxide mass fraction of the 2,4,7, 9-tetramethyl-5 decyne glycol-4, 7-diol polyoxyethylene ether derivative is 10-80%.
4. The cooling liquid for diamond wire-electrode cutting solar silicon wafers as claimed in claim 1, wherein: the isomeric alcohol polyether is an isomeric alcohol polyether surfactant of C8-C13, and the mass fraction of ethylene oxide of the isomeric alcohol polyether surfactant of C8-C13 is 30-40%.
5. The cooling liquid for diamond wire-electrode cutting solar silicon wafers as claimed in claim 1, wherein: the organic silicon polyether is trisiloxane polyoxyethylene ether, and the mass fraction of ethylene oxide in the trisiloxane polyoxyethylene ether is 5-8%.
6. The cooling liquid for diamond wire-electrode cutting solar silicon wafers as claimed in claim 1, wherein: the solvent is at least one of ethylene glycol, propylene glycol, ethylene glycol butyl ether or water.
7. A preparation method of cooling liquid for cutting a solar silicon wafer by a diamond wire is characterized by comprising the following steps: heating an alkynediol surfactant to 50-65 ℃ to be in a transparent state, sequentially adding alkynediol polyoxyethylene ether, isomeric alcohol polyether and organic silicon polyether into the alkynediol surfactant, starting a stirrer at 40-50 ℃, stirring for 15-20 minutes, adding a solvent, uniformly stirring, and cooling to normal temperature to obtain the cooling liquid for the diamond wire-electrode cutting solar silicon wafer.
8. The method for preparing the cooling liquid for the diamond wire-electrode cutting solar silicon wafer according to claim 7, wherein the method comprises the following steps: 20-30 wt% of alkynediol surfactant, 10-80 wt% of alkynediol polyoxyethylene ether, 0-50 wt% of isomeric alcohol polyether, 0-30 wt% of organic silicon polyether and 0-10 wt% of solvent in the cooling liquid of the diamond wire cutting solar silicon wafer; the alkyne diol surfactant is decyne diol and/or dodecyl alkyne alcohol; the acetylene glycol polyoxyethylene ether is 2,5,8, 11-tetramethyl-6-dodecaacetylene alcohol-5, 8-diol polyoxyethylene ether and/or a 2,4,7, 9-tetramethyl-5 decyne glycol-4, 7-diol polyoxyethylene ether derivative, the ethylene oxide mass fraction of the 2,5,8, 11-tetramethyl-6-dodecaacetylene alcohol-5, 8-diol polyoxyethylene ether is 10-60%, and the ethylene oxide mass fraction of the 2,4,7, 9-tetramethyl-5 decyne glycol-4, 7-diol polyoxyethylene ether derivative is 10-80%.
9. The method for preparing the cooling liquid for the diamond wire-electrode cutting solar silicon wafer according to claim 7, wherein the method comprises the following steps: the isomeric alcohol polyether is an isomeric alcohol polyether surfactant of C8-C10, and the mass fraction of ethylene oxide in the isomeric alcohol polyether surfactant of C8-C10 is 30-40%; the organic silicon polyether is trisiloxane polyoxyethylene ether, and the mass fraction of ethylene oxide in the trisiloxane polyoxyethylene ether is 5-8%; the solvent is at least one of ethylene glycol, propylene glycol, ethylene glycol butyl ether or water.
10. A preparation method of a cooling liquid for a diamond wire cutting solar silicon wafer comprises the following steps of heating an alkynediol surfactant to 60 ℃ to be in a transparent state, sequentially adding alkynediol polyoxyethylene ether, an isomeric alcohol polyether surfactant and trisiloxane polyoxyethylene ether into the alkynediol surfactant, starting a stirrer, keeping the temperature at 40 ℃, continuously stirring for 15 minutes, adding a conventional solvent, uniformly stirring, and cooling to the normal temperature to obtain the cooling liquid for the diamond wire cutting solar silicon wafer.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113930280A (en) * | 2021-11-02 | 2022-01-14 | 河北矽碳新材料科技有限公司 | Diamond wire cooling liquid and preparation method and application thereof |
| CN114480009A (en) * | 2022-03-25 | 2022-05-13 | 广东高景太阳能科技有限公司 | Cutting fluid for thin slice fine-line large-size solar-grade silicon wafer |
| CN115505453A (en) * | 2022-10-21 | 2022-12-23 | 上海第二工业大学 | Cutting fluid for diamond wire cutting large-size silicon wafer and preparation method thereof |
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| CN108559609A (en) * | 2018-06-04 | 2018-09-21 | 保定良合新材料科技有限公司 | A kind of Buddha's warrior attendant wire cutting liquid for solar silicon wafers processing |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113930280A (en) * | 2021-11-02 | 2022-01-14 | 河北矽碳新材料科技有限公司 | Diamond wire cooling liquid and preparation method and application thereof |
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| CN114480009B (en) * | 2022-03-25 | 2022-09-16 | 广东高景太阳能科技有限公司 | Cutting fluid for thin slice fine-line large-size solar-grade silicon wafer |
| CN115505453A (en) * | 2022-10-21 | 2022-12-23 | 上海第二工业大学 | Cutting fluid for diamond wire cutting large-size silicon wafer and preparation method thereof |
| CN115505453B (en) * | 2022-10-21 | 2023-08-29 | 上海第二工业大学 | Cutting fluid for diamond wire cutting of large-size silicon wafer and preparation method thereof |
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