CN113130650B - 功率半导体器件及其制备工艺 - Google Patents
功率半导体器件及其制备工艺 Download PDFInfo
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- CN113130650B CN113130650B CN202010032135.1A CN202010032135A CN113130650B CN 113130650 B CN113130650 B CN 113130650B CN 202010032135 A CN202010032135 A CN 202010032135A CN 113130650 B CN113130650 B CN 113130650B
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- 238000002360 preparation method Methods 0.000 title abstract description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 99
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- 229910052796 boron Inorganic materials 0.000 description 16
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (23)
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CN202010032135.1A CN113130650B (zh) | 2020-01-13 | 2020-01-13 | 功率半导体器件及其制备工艺 |
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CN202010032135.1A CN113130650B (zh) | 2020-01-13 | 2020-01-13 | 功率半导体器件及其制备工艺 |
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CN113130650A CN113130650A (zh) | 2021-07-16 |
CN113130650B true CN113130650B (zh) | 2022-08-09 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN116110937B (zh) * | 2022-12-20 | 2023-10-20 | 瑶芯微电子科技(上海)有限公司 | 碳化硅基mosfet器件及制作方法 |
CN115954377B (zh) * | 2023-03-10 | 2023-06-16 | 广东芯聚能半导体有限公司 | 半导体结构及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010182762A (ja) * | 2009-02-04 | 2010-08-19 | Oki Semiconductor Co Ltd | 半導体素子及びこの製造方法 |
CN102714224A (zh) * | 2009-11-03 | 2012-10-03 | 克里公司 | 具有选择性掺杂的jfet区的功率半导体器件及形成这样的器件的相关方法 |
CN102969351A (zh) * | 2012-12-07 | 2013-03-13 | 株洲南车时代电气股份有限公司 | 一种平面栅型igbt芯片 |
CN103077967A (zh) * | 2013-01-25 | 2013-05-01 | 淄博美林电子有限公司 | 一种高效率平面式绝缘栅双极型晶体管igbt |
CN104241348A (zh) * | 2014-08-28 | 2014-12-24 | 西安电子科技大学 | 一种低导通电阻的SiC IGBT及其制备方法 |
CN106684134A (zh) * | 2015-11-10 | 2017-05-17 | 株洲南车时代电气股份有限公司 | 一种功率半导体器件及其制作方法 |
-
2020
- 2020-01-13 CN CN202010032135.1A patent/CN113130650B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010182762A (ja) * | 2009-02-04 | 2010-08-19 | Oki Semiconductor Co Ltd | 半導体素子及びこの製造方法 |
CN102714224A (zh) * | 2009-11-03 | 2012-10-03 | 克里公司 | 具有选择性掺杂的jfet区的功率半导体器件及形成这样的器件的相关方法 |
CN102969351A (zh) * | 2012-12-07 | 2013-03-13 | 株洲南车时代电气股份有限公司 | 一种平面栅型igbt芯片 |
CN103077967A (zh) * | 2013-01-25 | 2013-05-01 | 淄博美林电子有限公司 | 一种高效率平面式绝缘栅双极型晶体管igbt |
CN104241348A (zh) * | 2014-08-28 | 2014-12-24 | 西安电子科技大学 | 一种低导通电阻的SiC IGBT及其制备方法 |
CN106684134A (zh) * | 2015-11-10 | 2017-05-17 | 株洲南车时代电气股份有限公司 | 一种功率半导体器件及其制作方法 |
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Effective date of registration: 20210820 Address after: 200441 room b1703, floor 17, building 1, No. 2816, Yixian Road, Baoshan District, Shanghai Applicant after: Sizhen Zhicheng semiconductor technology (Shanghai) Co.,Ltd. Address before: 1404, 23 / F, Lane 1450, Guoquan North Road, Yangpu District, Shanghai Applicant before: Zhang Qingchun |
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Address after: 200441 room b1703, floor 17, building 1, No. 2816, Yixian Road, Baoshan District, Shanghai Applicant after: Qingchun semiconductor (Shanghai) Co.,Ltd. Address before: 200441 room b1703, floor 17, building 1, No. 2816, Yixian Road, Baoshan District, Shanghai Applicant before: Sizhen Zhicheng semiconductor technology (Shanghai) Co.,Ltd. |
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Address after: Building 42#, No. 136 Yuhai East Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province 315336 Patentee after: Pure Semiconductor (Ningbo) Co.,Ltd. Address before: 200441 room b1703, floor 17, building 1, No. 2816, Yixian Road, Baoshan District, Shanghai Patentee before: Qingchun semiconductor (Shanghai) Co.,Ltd. |