CN113130354A

CN113130354A - Semiconductor production device

Info

Publication number: CN113130354A
Application number: CN202110382874.8A
Authority: CN
Inventors: 吴子见
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2021-04-09
Filing date: 2021-04-09
Publication date: 2021-07-16

Abstract

The disclosure provides a semiconductor production device, and relates to the technical field of semiconductor manufacturing. The semiconductor production apparatus includes: a panel and a heater. The panel includes a plurality of first through holes configured to uniformly distribute a process gas over a wafer through the plurality of first through holes; the heater is arranged on one side of the panel and used for heating the panel. The semiconductor production device provided by the disclosure can heat the panel, so that residues formed on the panel are avoided.

Description

Semiconductor production device

Technical Field

The disclosure relates to the technical field of semiconductor manufacturing, in particular to a semiconductor production device.

Background

In a semiconductor manufacturing process, APF (Advanced Patterning Mask) has a high selectivity, and is widely used as HM (Hard Mask). APF is generally synthesized by PECVD (Plasma Enhanced Chemical Vapor Deposition) using a semiconductor manufacturing apparatus, but APF synthesized by PECVD easily generates residues, and residues remaining in chamber are generally O₂plasma (ion) removal. However, residues on semiconductor manufacturing equipment are not easily cleaned.

It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.

Disclosure of Invention

An object of the embodiments of the present disclosure is to provide a semiconductor manufacturing apparatus, which can control the temperature of a panel, and is beneficial to removing residues, thereby preventing the formation of residues on the panel.

Additional features and advantages of the disclosure will be set forth in the detailed description which follows, or in part will be obvious from the description, or may be learned by practice of the disclosure.

According to an aspect of an embodiment of the present disclosure, there is provided a semiconductor production apparatus including:

a panel including a plurality of first through holes configured to uniformly distribute a process gas on a wafer through the plurality of first through holes;

the heater is arranged on one side of the panel and used for heating the panel.

In an exemplary embodiment of the present disclosure, an orthographic projection of the heater on the panel is located at an edge region of the panel.

In an exemplary embodiment of the present disclosure, the heater has a ring shape.

In an exemplary embodiment of the present disclosure, the semiconductor production apparatus further includes:

and the air box is arranged on one side of the panel.

In an exemplary embodiment of the present disclosure, the heater is provided at a side of the air box facing away from the panel.

In an exemplary embodiment of the present disclosure, the gas tank includes:

a gas tank body;

the fixing part is arranged on the air box body and extends towards the periphery of the air box body.

In an exemplary embodiment of the present disclosure, the heater is provided on the fixing portion.

In an exemplary embodiment of the present disclosure, an orthographic projection of the heater on the gas tank is located in the fixing portion.

In an exemplary embodiment of the present disclosure, the apparatus further includes:

and the blocking plate is positioned between the gas box and the panel, and a plurality of second through holes are formed in the blocking plate and used for mixing the process gas before the process gas is introduced into the panel.

the clamping piece is arranged on one side, away from the panel, of the heater and matched with the air box to fix the heater.

and the controller is connected with the heater and is used for controlling the heater to heat the panel to a target temperature.

In an exemplary embodiment of the present disclosure, the heater includes:

the heating wire is connected with the controller;

the insulating layer is coated on the heating wire.

In an exemplary embodiment of the present disclosure, the target temperature is 0-300 ℃.

In an exemplary embodiment of the present disclosure, the panel includes:

a hole plate portion formed with a plurality of the first through holes;

the side wall part is formed at the edge position of the orifice plate, and the side wall part and the orifice plate part enclose to form a cavity with an open end;

an extension portion formed on the sidewall portion and extending toward a periphery of the sidewall.

The semiconductor production device provided by the disclosure can control the temperature of the panel through the heater, so that the temperature of the panel is within a preset range, residues can not be deposited on the surface of the panel or the deposition of the residues can be greatly reduced relatively, and the problem that the residues are not easy to clean is solved.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty. In the drawings:

fig. 1 is a partial exploded view of a semiconductor manufacturing apparatus provided in one embodiment of the present disclosure;

FIG. 2 is a partial cross-sectional view of a semiconductor manufacturing apparatus provided in one embodiment of the present disclosure;

FIG. 3 is a graph showing the relationship between deposition rate and deposition temperature;

FIG. 4 is a graphical representation of deposition and etch rates as a function of orifice plate temperature.

Detailed Description

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.

Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.

The terms "a," "an," "the," "said" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; the terms "first" and "second" are used merely as labels, and are not limiting on the number of their objects.

The inventors have found that residual residues on residual semiconductor manufacturing equipment are not easily cleaned, primarily because of condensation and rapid deposition due to temperature differences, while liquid/gaseous different precursors (precorsor) are more difficult to remove than gaseous precorsor.

As shown in fig. 3 and 4, because the deposition rate of APF (which may be, for example, an amorphous carbon film) increases with decreasing temperature, lower temperatures on the Faceplate of a semiconductor manufacturing apparatus cause more surface deposition, resulting in more residue. A low Faceplate temperature results in an increased deposition rate and a decreased Etch rate. Thus, the temperature residue that the Faceplate maintains relatively low increases and the removal efficiency decreases.

The present disclosure provides a semiconductor production apparatus including: a Faceplate (Faceplate)10 and a heater 30, the Faceplate 10 including a plurality of first through holes configured to uniformly distribute a process gas on a wafer through the plurality of first through holes; the heater 30 is provided at one side of the panel 10 to heat the panel 10.

The semiconductor production device provided by the disclosure can control the temperature of the panel 10 through the heater, so that the temperature of the panel 10 is within a preset range, the surface of the panel 10 of the exhaust assembly cannot deposit residues or the deposition of the residues is greatly reduced relatively, and the problem that the residues are not easy to clean is solved.

In one embodiment of the present disclosure, the semiconductor manufacturing apparatus further includes: the CHAMBER comprises a CHAMBER cover (Chamber LID), a radio frequency isolating ring (RF ISOLATOR), a radio frequency bracket (RF STAND-OFF) and a HEAT EXCHANGER coolant pipe (Heat exchange cooler pipes), wherein a through hole is formed in the CHAMBER cover, a sunken annular step surface is formed at the edge of the through hole, the radio frequency isolating ring is arranged on the through hole of the CHAMBER cover and is positioned on the step surface to form installation and positioning, and the radio frequency bracket and the HEAT EXCHANGER coolant pipe are arranged on the CHAMBER cover. The faceplate 10 may be disposed on the rf isolation ring and extend through the through hole of the rf isolation ring.

In one embodiment of the present disclosure, the semiconductor manufacturing apparatus further includes: a GAS BOX (GAS BOX)30 is provided on the side of the panel 10 facing away from the chamber lid. Wherein, the GAS box 30 can be provided with a GAS INPUT pipe (GAS INPUT MANIFOLD), a GAS connecting pipe (GAS feed MANIFOLD), a GAS OUTPUT pipe (GAS OUTPUT MANIFOLD), a REMOTE cleaning installation pipe (REMOTE CLEAN MANIFOLD) and a cleaning GAS distribution pipe (CLEAN GAS DIS distribution MANIFOLD), the GAS OUTPUT pipe can be connected with the GAS box 30 to INPUT the process GAS into the GAS box 30; the clean gas distribution pipe and the gas output pipe are connected with the gas box 30, and clean gas can be input into the clean gas distribution pipe through the remote cleaning installation pipe and then enters the gas box 30.

As shown in fig. 1 and 2, the semiconductor manufacturing apparatus further includes: a blocking plate (packer plate)20, the blocking plate 20 being disposed between the gas tank and the panel. The barrier plate 20 is formed with a plurality of second through holes for mixing the process gas supplied from the gas box 30 before being introduced into the panel 10.

In one embodiment of the present disclosure, as shown in fig. 1, the panel 10 includes: the porous plate portion, the side wall portion, and the extending portion. Wherein the orifice portion acts as a showerhead to create a flow pattern for a more uniform deposited layer and/or to etch the deposited layer in a more uniform manner. The plurality of first through holes are formed in the orifice plate portion, and the first through holes may be regular hexagons, and may also be circular, oval, rectangular triangle, and the like, which is not limited in the present disclosure. The plurality of first through holes may be formed in an array on the orifice plate portion, or may be arranged in a non-array on the orifice plate portion. The gas molecules to be deposited are uniformly deposited on a target deposition surface such as a wafer after passing through the first through holes on the orifice plate part, and the first through holes achieve the purpose of uniformly diffusing the gas molecules.

Wherein, the side wall part is formed at the edge position of the orifice plate part, the side wall part and the orifice plate part enclose to form a cavity with an open end, and the blocking plate 20 is positioned in the cavity; the extending portion is formed on a side of the side wall facing away from the aperture plate portion, extending toward the periphery of the side wall portion. The hole plate part, the side wall part and the extending part can be of an integral structure or of a split structure and are connected together through welding, bonding and the like.

In one embodiment of the present disclosure, as shown in fig. 1 and 2, a GAS BOX (GAS BOX)30 includes: gas tank body and fixed part. The fixing part is arranged on the air box body and extends towards the periphery of the air box body. The gas box body is used for providing gas molecules for deposition, and the fixing part is used for positioning and installing the gas box 30.

In one embodiment of the present disclosure, the heater 40 is disposed on a side of the air box 30 facing away from the panel 10. Specifically, as shown in fig. 2, the heater 40 is provided on a fixing portion, and the fixing portion of the air box 30 abuts against an extending portion of the panel 10. The heater 40 can directly heat the fixing portion and indirectly heat the extending portion by heat conduction through the fixing portion, thereby achieving the purpose of heating the panel 10. Because the heater 40 is located on the fixed portion, that is, located in the edge area, the orthographic projection of the heater 40 on the panel 10 is located in the edge area of the panel 10, so that the heating effect on the edge area of the orifice plate portion is better, the temperature difference between the edge area and the central area of the orifice plate portion can be smaller, the surface of the orifice plate portion of the panel 10 cannot deposit residues or the deposition of the residues is relatively greatly reduced, and the problem that the residues are not easy to clean is solved.

In another embodiment of the present disclosure, the heater 40 may also be disposed between the fixing portion and the extending portion, and the fixing portion and the extending portion can be directly heated at the same time by the heater 40, so as to achieve the purpose of heating the panel 10. Because the heater 40 is located between the fixing portion and the extending portion, that is, located in the edge region, the heating effect on the edge region of the orifice portion is better, and the temperature difference between the edge region and the central region of the orifice portion can be smaller, so that the surface of the orifice portion of the panel 10 is not deposited with residues or the deposition of the residues is relatively greatly reduced, and the problem that the residues are not easy to clean is overcome.

In another embodiment of the present disclosure, the heater 40 may also be disposed on a side of the extending portion away from the fixing portion, and the extending portion can be directly heated by the heater 40 at the same time, so as to achieve the purpose of heating the panel 10. Because the heater 40 is located on the extension portion, i.e. located in the edge area, the heating effect on the edge area of the orifice portion is better, and the temperature difference between the edge area and the central area of the orifice portion can be smaller, so that the surface of the orifice portion of the panel 10 cannot deposit residues or the deposition of the residues is relatively greatly reduced, and the problem that the residues are not easy to clean is overcome.

In another embodiment of the present disclosure, the heater 40 may be provided in plural, that is, the heater may be provided at least two positions of one side of the fixing portion departing from the extension, between the extension portion and the fixing portion, and one side of the extension portion departing from the fixing portion; wherein, a plurality of superimposed heaters can also be arranged at the same position to further strengthen the heating effect to the panel, and the disclosure does not limit the same according to the specific situation.

In another embodiment of the present disclosure, as shown in fig. 1, the heater 40 is ring-shaped, matching the ring-shaped extension and fixation. When the heater 40 is provided on the fixing portion, the orthographic projection of the heater 40 on the air box 30 is located in the fixing portion, i.e., the heater 40 is completely supported by the fixing portion. By providing the annular heater 40, the installation of the heater 40 on the air box 30 or the panel 10 can be facilitated, and a more uniform heating effect can be provided to the edge of the orifice portion. The present disclosure is not limited thereto, and the heater 40 may have a bent sheet shape that is not closed, and may achieve a heating effect.

In one embodiment of the present disclosure, the heater 40 includes: the heating wire comprises a heating wire and an insulating layer, wherein the heating wire is wrapped by the insulating layer. The insulating layer can be made of insulating materials with good heat transfer effect, such as ceramics, and the insulating materials can also be insulating paint, insulating glue, fiber products, rubber, plastics and the like. The heating wire generates heat by being electrified, and the purpose of heating the panel 10 is achieved.

In one embodiment of the present disclosure, the semiconductor manufacturing apparatus further includes: and a controller. The controller is connected to the heater 40 for controlling the heater 40 to heat the panel 10 to a target temperature. The controller is connected to the heating wire, for example, for controlling the amount of current introduced into the heating wire, so as to control the amount of heat generated by the heating wire, and further control the heating temperature of the panel 10. The temperature of the orifice plate portion can be controlled to be 0 to 300 ℃, for example, 100 ℃, 150 ℃, 200 ℃, 250 ℃, 300 ℃ and the like, by the heater 40 in cooperation with the controller, which is not specifically listed here in the present disclosure.

In one embodiment of the present disclosure, as shown in fig. 1 and 2, the semiconductor production apparatus further includes: and a clamping member 50. The clamping member 50 is disposed on a side of the heater 40 facing away from the air box 30 and cooperates with the air box 30 to form a fixation of the heater 40.

Specifically, the clamping member 50 has a ring shape, and is matched with the ring-shaped heater 40 to stably fix the heater 40 to the fixing portion of the air box 30. The clamping member 50 is detachably connected to the fixed part, for example, by a bolt. Wherein the clamping member 50, the heater 40, the air tank 30 and the panel 10 can be fixed by bolts simultaneously passing through them.

The shape of the clamp 50 is not limited to this, and the clamp 50 may be a plurality of separate clamp pieces, and each clamp piece may fix the heater 40 by being engaged with a fixing portion of the air box 30. The specific shape and structure of the clamping piece are not limited in the disclosure, and all the clamping pieces can play a role in fixing the heater and belong to the protection scope of the disclosure.

In one embodiment of the present disclosure, the clamping member 50 is an insulating material. By providing the clamping member 50 as an insulating material, when the heater 40 generates heat by energization, it is possible to form a block to a leakage current when the heater 40 leaks electricity, improving the reliability of the semiconductor manufacturing apparatus. For example, the material of the clamping member 50 may be a fiber product, rubber, plastic or glass, ceramic product, etc. having a certain hardness. The present disclosure is not limited thereto, and the clamping member 50 may also be a non-insulating material.

In one embodiment of the present disclosure, as shown in fig. 2, the gas supply apparatus further includes a housing 60, and the housing 60 may be formed of an insulating material.

In one embodiment of the present disclosure, the semiconductor manufacturing apparatus may further include: the radio frequency FILTER BOX comprises a radio frequency FILTER BOX (RE FILTER BOX), a CHAMBER radio frequency COVER (CHAMBER RF COVER), a trial machine belt (DUMMY STRAP), an AC CONNECTOR (AC CONNECTOR) and a TC CONNECTOR (TC CONNECTOR), wherein the radio frequency FILTER BOX is arranged on the CHAMBER radio frequency COVER, and the AC CONNECTOR and the TC CONNECTOR are positioned below the radio frequency FILTER BOX. Wherein the chamber rf cover may constitute the housing 60.

Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

It will be understood that the present disclosure is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims

1. A semiconductor manufacturing apparatus, comprising:

the heater is arranged on one side of the panel and used for heating the panel.

2. The semiconductor production device according to claim 1, wherein an orthographic projection of the heater on the panel is located at an edge region of the panel.

3. The semiconductor manufacturing apparatus of claim 1, wherein the heater is ring-shaped.

4. The semiconductor production apparatus according to claim 1, further comprising:

and the air box is arranged on one side of the panel.

5. The semiconductor manufacturing apparatus of claim 4, wherein the heater is provided on a side of the gas box facing away from the panel.

6. The semiconductor manufacturing apparatus of claim 5, wherein the gas box comprises:

a gas tank body;

7. The semiconductor production apparatus according to claim 6, wherein the heater is provided on the fixing portion.

8. The semiconductor production apparatus according to claim 7, wherein an orthographic projection of the heater on the gas tank is located in the fixing portion.

9. The semiconductor production apparatus according to claim 4, wherein the apparatus further comprises:

10. The semiconductor production apparatus according to claim 4, wherein the apparatus further comprises:

11. The semiconductor production apparatus according to claim 1, wherein the apparatus further comprises:

12. The semiconductor production apparatus according to claim 11, wherein the heater comprises:

the heating wire is connected with the controller;

and the insulating layer is coated on the heating wire.

13. The semiconductor manufacturing apparatus of claim 11, wherein the target temperature is 0-300 ℃.

14. The semiconductor production device according to claim 1, wherein the panel comprises:

a hole plate portion formed with a plurality of the first through holes;