CN113128276A - Method for manufacturing optical fingerprint device - Google Patents

Method for manufacturing optical fingerprint device Download PDF

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Publication number
CN113128276A
CN113128276A CN201911407183.8A CN201911407183A CN113128276A CN 113128276 A CN113128276 A CN 113128276A CN 201911407183 A CN201911407183 A CN 201911407183A CN 113128276 A CN113128276 A CN 113128276A
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CN
China
Prior art keywords
light
wafer
layer
optical fingerprint
image sensor
Prior art date
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Pending
Application number
CN201911407183.8A
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Chinese (zh)
Inventor
赵立新
夏欢
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Geke Microelectronics Shanghai Co Ltd
Galaxycore Shanghai Ltd Corp
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Geke Microelectronics Shanghai Co Ltd
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Application filed by Geke Microelectronics Shanghai Co Ltd filed Critical Geke Microelectronics Shanghai Co Ltd
Priority to CN201911407183.8A priority Critical patent/CN113128276A/en
Publication of CN113128276A publication Critical patent/CN113128276A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12Fingerprints or palmprints
    • G06V40/13Sensors therefor
    • G06V40/1318Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Human Computer Interaction (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The invention provides a manufacturing method of an optical fingerprint device, which is characterized in that a part of a light transmission layer corresponding to a pad area of an image sensor is removed by adopting a mechanical cutting or laser cutting mode to expose the pad area, so that the purpose that the light transmission layer avoids the pad area of the image sensor is realized, and the electrical connection performance of the pad area is not influenced.

Description

Method for manufacturing optical fingerprint device
Technical Field
The invention relates to a manufacturing method of an optical fingerprint device.
Background
The current fingerprint identification schemes include optical technology, silicon technology (capacitive/radio frequency type), ultrasonic technology, etc. Among them, the optical fingerprint recognition technology has been widely used in portable electronic devices.
The optical fingerprint recognition technology adopts an optical image capturing device based on the total reflection principle (FTIR) of light. The light strikes the surface of the light-transmitting layer (such as organic or inorganic glass) pressed with a fingerprint, the reflected light is obtained by the image sensor, and the amount of the reflected light depends on the depth of ridges and valleys of the fingerprint pressed on the surface of the glass, and the grease and moisture between the skin and the glass. The light is reflected to the image sensor by the interface between the glass and the air after the light is emitted to the center of the valley through the glass, and the light emitted to the ridge is not reflected by the total reflection but is absorbed by the contact surface between the ridge and the glass or reflected to other center in a diffused manner, so that the image of the fingerprint is formed on the image sensor.
Due to the need of a large-sized microlens to increase the energy of incident light and achieve high image quality, it is often necessary to provide a thick light-transmitting layer (above 50 μm) above the pixel cells and a thick light-blocking structure (e.g., 15-50 μm) between the pixel cells in the prior art in order to solve the problem of signal crosstalk caused by incident light entering adjacent pixel cells of the image sensor. In addition, an infrared cut filter film is required to be arranged above the pixel unit to reduce noise crosstalk and image distortion caused by infrared light in incident light entering the image sensor, and improve the optical performance of the optical fingerprint device. However, it should be noted that the light-transmitting layer, the light-blocking structure, and the infrared cut-off filter film all need to be kept away from the pad region of the image sensor, so as to avoid affecting the electrical connection performance of the pad region.
In the prior art, after an organic light-transmitting material is coated on the surface of an image sensor wafer, the organic light-transmitting material corresponding to a pad region is removed through an etching process, so that the purpose that the light-transmitting layer avoids the pad region of the image sensor is achieved.
Disclosure of Invention
The invention aims to provide a manufacturing method of an optical fingerprint device, which improves the production efficiency, increases the productivity and reduces the manufacturing cost.
Based on the above consideration, the present invention provides a method for manufacturing an optical fingerprint device, comprising the steps of: providing a wafer with a plurality of image sensors; forming a light-transmitting layer on the wafer; removing the part of the euphotic layer corresponding to the pad area of the image sensor by adopting a mechanical cutting or laser cutting mode to expose the pad area; forming a plurality of micro lenses on the euphotic layer; thereby forming the optical fingerprint device.
Preferably, a plurality of light-transmitting layers are formed on the wafer, a part, corresponding to the pad region of the image sensor, of one light-transmitting layer closest to the wafer is removed by means of photolithography, a part, corresponding to the pad region of the image sensor, of one light-transmitting layer farthest from the wafer is removed by means of mechanical cutting or laser cutting, and parts, corresponding to the pad region of the image sensor, of the other light-transmitting layers are removed by means of photolithography, mechanical cutting or laser cutting, so that the pad region is exposed.
Preferably, one light-transmitting layer closest to the wafer is formed on the wafer in a coating or bonding manner, and the other light-transmitting layers are formed on the wafer in a bonding manner.
Preferably, one of the light-transmitting layers closest to the wafer is an organic light-transmitting film, and the other light-transmitting layer is an organic light-transmitting film or glass.
Preferably, the organic light-transmitting film is a dry film.
Preferably, the method for manufacturing an optical fingerprint device further comprises: and an infrared cut-off filter film and a light blocking layer are formed between the multiple light transmitting layers.
Preferably, the method for manufacturing an optical fingerprint device further comprises: and an infrared cut-off filter film and a light blocking layer are formed between the light transmitting layer and the wafer.
And the infrared cut-off filter film is enabled to avoid the part corresponding to the pad area of the image sensor by adopting a stripping process or a jig blocking mode.
Preferably, the method for manufacturing an optical fingerprint device further comprises: and forming a light blocking layer between the microlenses.
According to the manufacturing method of the optical fingerprint device, the part of the light transmission layer corresponding to the pad area of the image sensor is removed in a mechanical cutting or laser cutting mode to expose the pad area, the purpose that the light transmission layer avoids the pad area of the image sensor is achieved, and the electrical connection performance of the pad area is not affected.
Drawings
Other features, objects and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments thereof, which proceeds with reference to the accompanying drawings.
Fig. 1-8 are process schematic diagrams of the manufacturing method of the optical fingerprint device of the invention.
In the drawings, like or similar reference numbers indicate like or similar devices (modules) or steps throughout the different views.
Detailed Description
The invention provides a manufacturing method of an optical fingerprint device, which is characterized in that a part of a light transmission layer corresponding to a pad area of an image sensor is removed by adopting a mechanical cutting or laser cutting mode to expose the pad area, so that the purpose that the light transmission layer avoids the pad area of the image sensor is realized, and the electrical connection performance of the pad area is not influenced.
In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof. The accompanying drawings illustrate, by way of example, specific embodiments in which the invention may be practiced. The illustrated embodiments are not intended to be exhaustive of all embodiments according to the invention. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.
The present invention will be described in detail with reference to specific examples.
The invention provides a manufacturing method of an optical fingerprint device, which comprises the following steps: providing a wafer with a plurality of image sensors; forming a light-transmitting layer on the wafer; removing the part of the euphotic layer corresponding to the pad area of the image sensor by adopting a mechanical cutting or laser cutting mode to expose the pad area; forming a plurality of micro lenses on the euphotic layer; thereby forming the optical fingerprint device.
Referring to fig. 1, a wafer 300 formed with a number of image sensors including pad regions 302 and photosensitive regions 303 is provided, the pad regions 302 and the photosensitive regions 303 being spaced apart in the figure by dashed lines.
Referring to fig. 2, an infrared cut filter 301 is formed on a portion of the wafer 300 corresponding to a photosensitive region 303 of the image sensor. Preferably, the infrared cut filter 301 is made to avoid a portion corresponding to the pad area 302 of the image sensor by a lift-off process or a jig blocking method.
It is understood by those skilled in the art that the ir-cut filter 301 on the surface of the wafer 300 is only one preferred embodiment of the present invention, and the ir-cut filter 403 may be disposed at other positions between the subsequently formed light-transmitting layer 305 and the wafer 300 or between the light-transmitting layers 305 and 307 according to the process and application requirements.
Referring to fig. 3, a light-transmitting layer 305 is formed on a wafer 300, and the light-transmitting layer 305 is preferably an organic light-transmitting film, such as a dry film, and may be formed on the wafer 300 by coating or bonding, here shown as coating on the wafer 300.
In another preferred embodiment not shown, when the single-layer transparent layer 305 is formed on the wafer 300 by bonding, a mechanical cutting or laser cutting method may be used to remove a portion of the transparent layer 305 corresponding to the pad region 302 of the image sensor to expose the pad region 302, as shown in fig. 4, the purpose that the transparent layer avoids the pad region of the image sensor is achieved, so as to avoid affecting the electrical connection performance of the pad region.
In another preferred embodiment of the present invention, the formation of multiple transparent layers 305, 307 on wafer 300 is also shown. Preferably, a portion of a light-transmitting layer closest to the wafer 300, i.e., the first light-transmitting layer 305, corresponding to the pad region 302 of the image sensor is removed by photolithography, so as to form the structure shown in fig. 4.
Referring to fig. 5, a light blocking layer 306 formed of, for example, a black glue material is formed on the first light-transmitting layer 305 in order to reduce signal interference caused by crosstalk of light.
It will be appreciated by those skilled in the art that the light blocking layer 306 is disposed between the multiple light transmissive layers 305, 307, which is only one preferred embodiment of the present invention, and that the light blocking layer 306 may be disposed at other positions between the light transmissive layer 305 and the wafer 300 according to the process and application requirements.
Referring to fig. 6, a second light-transmitting layer 307 is formed over the light-blocking layer 306.
Referring to fig. 7, a plurality of microlenses 309 are formed on the second light-transmitting layer 307; preferably, a light blocking layer 308 formed of, for example, a black glue material may be further formed between the microlenses 309, so as to further reduce signal interference caused by crosstalk of light rays.
Referring to fig. 8, the wafer 300 is thinned; a portion of the second light-transmitting layer 307 corresponding to the pad region 302 of the image sensor is removed by mechanical cutting or laser cutting to expose the pad region 302, thereby forming the optical fingerprint device as shown in fig. 8. Compared with the etching process in the prior art, the method for removing the second light-transmitting layer 307 by mechanical cutting or laser cutting saves the process time, improves the production efficiency, increases the productivity and reduces the manufacturing cost.
In the case of multiple light-transmitting layers, the light-transmitting layer closest to the wafer is preferably an organic light-transmitting film, such as a dry film, and may be formed on the wafer by coating or bonding, and is preferably removed by photolithography, so as to ensure the accuracy of removal and protection of the surface of the image sensor; the other euphotic layers can be organic euphotic films or glass, are formed on the wafer in an adhesion mode, and preferably, a mechanical cutting or laser cutting mode is adopted to remove the euphotic layer farthest from the wafer so as to save process time and improve production efficiency.
In summary, in the manufacturing method of the optical fingerprint device of the present invention, the portion of the light transmissive layer corresponding to the pad region of the image sensor is removed by mechanical cutting or laser cutting to expose the pad region, so that the light transmissive layer avoids the pad region of the image sensor, and the electrical connection performance of the pad region is not affected.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive. Furthermore, it will be obvious that the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. Several elements recited in the apparatus claims may also be implemented by one element. The terms first, second, etc. are used to denote names, but not any particular order.

Claims (9)

1. A method of manufacturing an optical fingerprint device, comprising the steps of:
providing a wafer with a plurality of image sensors;
forming a light-transmitting layer on the wafer;
removing the part of the euphotic layer corresponding to the pad area of the image sensor by adopting a mechanical cutting or laser cutting mode to expose the pad area;
forming a plurality of micro lenses on the euphotic layer;
thereby forming the optical fingerprint device.
2. The method for manufacturing an optical fingerprint device according to claim 1, wherein a plurality of transparent layers are formed on the wafer, a portion of one transparent layer closest to the wafer corresponding to the pad region of the image sensor is removed by photolithography, a portion of one transparent layer farthest from the wafer corresponding to the pad region of the image sensor is removed by mechanical cutting or laser cutting, and portions of the other transparent layers corresponding to the pad region of the image sensor are removed by photolithography, mechanical cutting or laser cutting to expose the pad region.
3. The method of claim 2, wherein the light-transmissive layer closest to the wafer is coated or bonded on the wafer, and the other light-transmissive layers are bonded on the wafer.
4. The method of claim 2, wherein one light-transmitting layer closest to the wafer is an organic light-transmitting film, and the other light-transmitting layers are organic light-transmitting films or glass.
5. The method of claim 4, wherein the organic light transmissive film is a dry film.
6. The method of manufacturing an optical fingerprint device according to claim 2, further comprising: and an infrared cut-off filter film and a light blocking layer are formed between the multiple light transmitting layers.
7. The method of manufacturing an optical fingerprint device according to claim 1, further comprising: and an infrared cut-off filter film and a light blocking layer are formed between the light transmitting layer and the wafer.
8. The method for manufacturing an optical fingerprint device according to claim 6 or 7, wherein the infrared cut filter film is kept away from a portion corresponding to the pad region of the image sensor by a lift-off process or a jig blocking method.
9. The method of manufacturing an optical fingerprint device according to claim 1, further comprising: and forming a light blocking layer between the microlenses.
CN201911407183.8A 2019-12-31 2019-12-31 Method for manufacturing optical fingerprint device Pending CN113128276A (en)

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Application Number Priority Date Filing Date Title
CN201911407183.8A CN113128276A (en) 2019-12-31 2019-12-31 Method for manufacturing optical fingerprint device

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Application Number Priority Date Filing Date Title
CN201911407183.8A CN113128276A (en) 2019-12-31 2019-12-31 Method for manufacturing optical fingerprint device

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CN113128276A true CN113128276A (en) 2021-07-16

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101136312A (en) * 2006-08-31 2008-03-05 株式会社半导体能源研究所 Method for manufacturing semiconductor device and method for manufacturing display device
US20100155582A1 (en) * 2008-12-10 2010-06-24 Sony Corporation Solid-state imaging device and manufacturing method of the same, electronic equipment, and semiconductor device
CN103050586A (en) * 2011-10-13 2013-04-17 三星电子株式会社 Cutting method of light emitting element package with ceramic substrate and cutting method of workpiece with multi-layer structure
CN108321215A (en) * 2018-03-07 2018-07-24 苏州晶方半导体科技股份有限公司 The encapsulating structure and preparation method thereof of optical finger print identification chip

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101136312A (en) * 2006-08-31 2008-03-05 株式会社半导体能源研究所 Method for manufacturing semiconductor device and method for manufacturing display device
US20100155582A1 (en) * 2008-12-10 2010-06-24 Sony Corporation Solid-state imaging device and manufacturing method of the same, electronic equipment, and semiconductor device
CN103050586A (en) * 2011-10-13 2013-04-17 三星电子株式会社 Cutting method of light emitting element package with ceramic substrate and cutting method of workpiece with multi-layer structure
CN108321215A (en) * 2018-03-07 2018-07-24 苏州晶方半导体科技股份有限公司 The encapsulating structure and preparation method thereof of optical finger print identification chip

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Application publication date: 20210716