CN113122814A - Magnetron sputtering planar cathode device - Google Patents

Magnetron sputtering planar cathode device Download PDF

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Publication number
CN113122814A
CN113122814A CN202110476838.8A CN202110476838A CN113122814A CN 113122814 A CN113122814 A CN 113122814A CN 202110476838 A CN202110476838 A CN 202110476838A CN 113122814 A CN113122814 A CN 113122814A
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China
Prior art keywords
magnet
region
group
magnet group
transition
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CN202110476838.8A
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Chinese (zh)
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谢斌
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University of Science and Technology of China USTC
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University of Science and Technology of China USTC
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Priority to CN202110476838.8A priority Critical patent/CN113122814A/en
Publication of CN113122814A publication Critical patent/CN113122814A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a magnetron sputtering plane cathode device, which comprises a magnet group and a magnet yoke, wherein the magnet group comprises three sets of magnet groups, namely a straight-path-region magnet group, a transition-region magnet group and an annular-region magnet group, and the transition-region magnet group is connected with the straight-path-region magnet group and the annular-region magnet group; the straight-road-area magnet group and the transition-area magnet group respectively comprise a group of central magnets and two groups of outer magnets, and the annular-area magnet group comprises a group of central magnets and a group of outer ring magnets; the distance between the outer magnets of the straight-track-zone magnet group is d1, the diameter of the outer ring magnet of the annular-zone magnet group is d2, and then d2> d 1. According to the invention, the magnetic field distribution of the annular region and the transition region of the target is improved by changing the shape of the magnet and the arrangement of the magnet on the magnet yoke, so that the problem of over-fast local etching of the transition region and the annular region on the surface of the magnetron sputtering target is solved, the purpose of reducing the etching rate is achieved, the effective uniform sputtering region of the target is lengthened under the condition of not increasing the length of the target, the utilization rate of the target is improved, and the magnetron sputtering coating cost is reduced.

Description

Magnetron sputtering planar cathode device
Technical Field
The invention relates to the technical field of magnetron sputtering, in particular to a magnetron sputtering planar cathode device.
Background
Physical vapor deposition is a technique that utilizes physical means to deposit a thin film on a substrate. Magnetron sputtering is one of the physical vapor deposition techniques. Among magnetron sputtering coating techniques, a magnetron sputtering technique in which a magnetic field generating device is disposed on the back surface of a target material as a material to be processed is the mainstream of the sputtering method. Magnetron sputtering forms a magnetic field on the surface of a target through a magnet, and plasma is confined near the surface of the target by utilizing the drift motion of electrons, so that high-density plasma is formed; high-energy ions (generally argon ions accelerated by an electric field) bombard the surface of the target, ions or atoms on the surface of the target exchange energy with the incident high-energy ions and then are splashed out of the surface of the target, and the ions or atoms are deposited on a substrate to form a film.
The magnetic field distribution formed on the surface of the target by the magnetic field generating device of the magnetron sputtering plane cathode determines the shape of an etching channel of the target after the target is etched and consumed by high-energy particles, and simultaneously determines the sputtering efficiency and the utilization rate of the target.
A conventional magnetron sputtering planar cathode is shown in fig. 1, and generally includes a target 1 and a magnetic field generating device (including a magnet assembly 2 and a magnet yoke 3), the magnet assembly 2 is disposed between the magnet yoke 3 and the target 1, and typically includes three sets of magnets, including a central magnet 21 located in the middle and two outer magnets 22 located on both sides. The magnetization polar axis of the magnet is vertical to the plane of the target, the magnetic pole direction of the outer magnet 22 is the same, the magnetic pole of the outer magnet 22 is opposite to that of the central magnet 21, the outer magnet 22 is connected with the central magnet 21 through the magnetic yoke 3 to form a closed magnetic loop, and a magnetic field is formed on the surface of the target so as to restrain plasma.
The target sputtering region of a common magnetron sputtering planar cathode is generally divided into a middle straight channel region, a transition region and an end annular region (fig. 2), and the structure of a magnetic field generating device below a target corresponding to the target straight channel region and the transition region is shown in fig. 1. As shown in fig. 2, the magnet group 4 in the annular region is composed of an outer ring magnet 42 located on the outer side and a center magnet 41 located in the middle, the outer ring magnet 42 in the annular region has the same magnetic pole direction as the outer magnet 22 in the straight region, and the center magnet 41 in the annular region and the center magnet 21 in the straight region have the same magnetic pole direction. The outer ring magnet 42 is connected with the central magnet 22 by the yoke 3 to form a closed magnetic loop, and forms a magnetic field on the surface of the target material so as to confine plasma.
In a common magnetron sputtering planar cathode magnetic field generating device, magnet groups corresponding to a target straight channel region and a transition region are distributed in the same way. Due to the fact that magnetic field distribution on the surface of the target material is not uniform in transition and the magnetic field intensity changes when the target material is transited from the straight channel area to the annular area, the local etching speed of the annular area (shown in the figure 3) and the transition area (shown in the figure 4) of the target material is often too high (shown in the shaded area), the target material is failed after the end of the target material is etched too early, and therefore the utilization rate of the target material is reduced.
Disclosure of Invention
The magnetron sputtering planar cathode device provided by the invention can solve the technical problems.
In order to solve the technical problems, the invention adopts the following technical scheme:
a magnetron sputtering planar cathode device comprises a magnet group and a magnet yoke, wherein the magnet group is matched with a target material to be arranged when the magnetron sputtering planar cathode device is used, the magnet group is fixed on the magnet yoke and is arranged between the magnet yoke and the target material, the magnet group comprises a group of central magnets positioned in the middle and two groups of outer magnets positioned on two sides, the magnetization polar axes of the magnets are vertical to the plane of the target material, the magnetic poles of the outer magnets are the same in direction, the magnetic poles of the outer magnets are opposite to that of the central magnets, the magnet yoke of the outer magnets is connected with the central magnets to form a closed magnetic loop;
the magnetic assembly comprises three sets of magnetic assemblies, namely a straight-path-region magnetic assembly, a transition-region magnetic assembly and an annular-region magnetic assembly, wherein the transition-region magnetic assembly is connected with the straight-path-region magnetic assembly and the annular-region magnetic assembly;
the straight-road-area magnet group and the transition-area magnet group respectively comprise a group of central magnets and two groups of outer magnets, and the annular-area magnet group comprises a group of central magnets and a group of outer ring magnets;
the distance between the outer magnets of the straight-track-zone magnet group is d1, the diameter of the outer ring magnet of the annular-zone magnet group is d2, and then d2> d 1.
Furthermore, the distance between the magnets outside the transition zone magnet group and the straight zone magnet group is d1, and the distance between the magnets outside the transition zone magnet group and the annular zone magnet group is d 2.
Further, d 2: d1 is 1.02-1.1: 1.
Further, the length of the transition zone magnet group is d 3; d 3: d1 is 0.15-0.6: 1.
According to the technical scheme, the magnetron sputtering planar cathode device improves the magnetic field distribution of the annular region and the transition region of the target by changing the shape of the magnet and the arrangement of the magnet on the magnet yoke, so that the problem that the local etching of the transition region and the annular region is too fast is solved, the purpose of reducing the etching rate is achieved, the effective uniform sputtering region of the target is lengthened under the condition of not increasing the length of the target, the utilization rate of the target is improved, and the magnetron sputtering coating cost is reduced.
Specifically, the magnetron sputtering planar cathode device has the following beneficial effects:
1. the problem that the etching speed of the annular area and the transition area of the planar cathode target is too high is solved;
2. under the condition of not increasing the length of the target material, the effective uniform sputtering area of the target material is lengthened;
3. the utilization rate of the target material is improved;
4. the magnetron sputtering coating cost is reduced.
Drawings
FIG. 1 is a diagram of a magnetic field generating device for a straight track region and a transition region;
FIG. 2 is a structural view of a magnetic field generating device in an annular region;
FIG. 3 is a schematic view of an annular region of a common magnetron sputtering planar cathode magnetic field generating device;
FIG. 4 is a schematic diagram of a transition region of a common magnetron sputtering planar cathode magnetic field generating device;
FIGS. 5 and 6 are schematic structural views of the present invention;
fig. 7 is a graph of the magnetic field distribution of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
The invention reduces the etching rate of the annular area and the transition area of the target by the following method, thereby improving the utilization rate of the target.
As shown in fig. 1, the magnetron sputtering planar cathode device according to the present embodiment is formed by three sets of magnet sets, namely, a straight-path-region magnet set 5 (including a set of central magnets 51 and two sets of outer magnets 52), a transition-region magnet set 6 (including a set of central magnets 61 and two sets of outer magnets 62) and an annular-region magnet set 7 (including a set of central magnets 71 and a set of outer annular magnets 72), through redesign of the magnet sets, wherein the transition-region magnet set is connected with the straight-path-region magnet set and the annular-region magnet set. The distance between the magnets 52 outside the straight-track region magnet group is d1, the diameter of the outer ring magnet 72 of the ring-shaped region magnet group is d2, d2> d1, the distance between the magnets 62 outside the transition region magnet group and the straight-track region magnet group is d1, the distance between the magnets 62 outside the transition region magnet group and the ring-shaped region magnet group is d2, and the length of the transition region magnet group is d3 (fig. 5 and 6).
The addition of the magnet group in the transition region and the increase of the diameter of the magnet group in the annular region widen the etching groove of the target material transition region in the graph 2; meanwhile, the maximum value of the magnetic field generated by the transition region and the annular region of the magnetic field generating device on the surface of the target material is weakened, and the uniformity is improved, as shown in fig. 7, the magnetic field distribution of the annular region after improvement is shown in a curve 1, and the magnetic field distribution of the common cathode annular region is shown in a curve 2.
By changing the magnetic field distribution of the annular region and the transition region of the target material by the method, the problem that the local etching of the transition region and the annular region is too fast is solved, and the purpose of reducing the etching rate is achieved, so that the effective uniform sputtering region of the target material is lengthened under the condition of not increasing the length of the target material, and the utilization rate of the target material is improved.
Specifically, in the planar cathode transition region, the distance between the two outer groups of magnets is slowly increased, so that the distance between the two outer groups of magnets is increased from d1 in the straight-path region to d2, d2 in the annular region: d1 is 1.02-1.1: 1.
The distribution radius of the outer ring magnets of the annular region is increased to match the magnet spacing d2 outside the transition region.
Transition zone length d3, d 3: d1 is 0.15-0.6: 1.
From the above, the magnetron sputtering planar cathode device according to the embodiment of the invention changes the magnetic field distribution of the annular region and the transition region of the target material by the above method, improves the problem that the local etching of the transition region and the annular region is too fast, and achieves the purpose of reducing the etching rate, thereby lengthening the effective uniform sputtering region of the target material, improving the utilization rate of the target material, and reducing the magnetron sputtering coating cost at the same time without increasing the length of the target material.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (4)

1. A magnetron sputtering planar cathode device comprises a magnet group (2) and a magnet yoke (3), wherein the magnet group (2) is matched with a target (1) to be arranged when the magnetron sputtering planar cathode device is used, the magnet group (2) is fixed on the magnet yoke (3) and is arranged between the magnet yoke (3) and the target (1), the magnet group (2) comprises a central magnet positioned in the middle of the magnet yoke and an outer magnet positioned at the edge of the magnet yoke, the magnetization polar axis of the magnet is vertical to the plane of the target (1), the magnetic poles of the outer magnet have the same direction, the magnetic poles of the outer magnet are opposite to those of the central magnet, the outer magnet is connected with the central magnet through the magnet yoke to form a closed magnetic loop;
the method is characterized in that:
the magnet group (2) comprises three sets of magnet groups, namely a straight-path-region magnet group (5), a transition-region magnet group (6) and an annular-region magnet group (7), wherein the transition-region magnet group (6) is connected with the straight-path-region magnet group (5) and the annular-region magnet group (7);
the straight-path-region magnet group (5) and the transition-region magnet group (6) respectively comprise a group of central magnets and two groups of outer magnets, and the annular-region magnet group (7) comprises a group of central magnets and a group of outer ring magnets;
the distance between the outer magnets of the straight-zone magnet group (5) is d1, the diameter of the outer ring magnet of the ring-zone magnet group (7) is d2, and then d2> d 1.
2. A magnetron sputtering planar cathode assembly as claimed in claim 1 wherein: the distance between the outer magnet of the transition region magnet group (6) and the straight region magnet group (5) is d1, and the distance between the outer magnet of the transition region magnet group (6) and the annular region magnet group (7) is d 2.
3. A magnetron sputtering planar cathode assembly as claimed in claim 1 wherein: d 2: d1 is 1.02-1.1: 1.
4. A magnetron sputtering planar cathode assembly as claimed in claim 1 wherein: the length of the transition zone magnet group (6) is d 3; d 3: d1 is 0.15-0.6: 1.
CN202110476838.8A 2021-04-29 2021-04-29 Magnetron sputtering planar cathode device Pending CN113122814A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110476838.8A CN113122814A (en) 2021-04-29 2021-04-29 Magnetron sputtering planar cathode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110476838.8A CN113122814A (en) 2021-04-29 2021-04-29 Magnetron sputtering planar cathode device

Publications (1)

Publication Number Publication Date
CN113122814A true CN113122814A (en) 2021-07-16

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