CN113097047B - Ashing apparatus and ashing method - Google Patents
Ashing apparatus and ashing method Download PDFInfo
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- CN113097047B CN113097047B CN202110259110.XA CN202110259110A CN113097047B CN 113097047 B CN113097047 B CN 113097047B CN 202110259110 A CN202110259110 A CN 202110259110A CN 113097047 B CN113097047 B CN 113097047B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
The invention discloses ashing equipment and an ashing method. The ashing equipment comprises a reaction chamber, a reaction chamber and a processing chamber, wherein the reaction chamber is used for ashing a wafer to obtain an ashed wafer; the transmission channel is connected with the reaction chamber and is used for transmitting the ashed wafer to a cooling chamber; the cooling chamber is connected with the transmission channel to receive the ashed wafer and is used for cooling the ashed wafer, wherein the temperature of the ashing treatment is a first temperature; the temperature of at least a portion of the transfer passage is a second temperature; the temperature of the cooling chamber is a third temperature; the second temperature is lower than the first temperature, and the third temperature is lower than the second temperature. According to the ashing equipment and the ashing method provided by the embodiment of the invention, the wafer can be prevented from being broken due to temperature quenching.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to ashing equipment and an ashing method.
Background
The manufacturing process of the semiconductor device includes thin Film deposition (Film Depo), exposure (Photo), etching (Etch), photoresist removal (PR Strip), and Wet cleaning (Wet clean). The photoresist removal (ashing) is performed on an ashing apparatus (e.g., a Plasma Asher).
In the prior art, with the increasing of the layer number and the thickness, the stress on the surface of a wafer (wafer) is larger and larger, the process time of the traditional CMOS process is very short, the temperature of the wafer is lower, and the process can be reluctantly adapted to the existing manufacturing process. However, the current core/storage process time is long, the temperature of the wafer is high, and the wafer is more stressed and has a larger temperature difference, so that the wafer is more prone to chipping in the cooling chamber (cooling station).
Therefore, a new ashing apparatus and ashing method, which can overcome the above problems, are desired.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide an ashing apparatus and an ashing method, which can prevent the wafer from being broken due to rapid temperature quenching.
According to an aspect of the invention, an ashing apparatus is provided, which comprises a reaction chamber for ashing a wafer to obtain an ashed wafer; the transmission channel is connected with the reaction chamber and is used for transmitting the ashed wafer to a cooling chamber; the cooling chamber is connected with the transmission channel to receive the ashed wafer and is used for cooling the ashed wafer, wherein the temperature of the ashing treatment is a first temperature; the temperature of at least a portion of the transfer passage is a second temperature; the temperature of the cooling chamber is a third temperature; the second temperature is lower than the first temperature, and the third temperature is lower than the second temperature.
Preferably, the reaction chamber further comprises an electrostatic chuck for placing the wafer, wherein the temperature of the electrostatic chuck is the first temperature when the ashing process is performed.
Preferably, the conveying channel is provided with a heating unit for heating of the conveying channel.
Preferably, the conveying channel further comprises a temperature sensing unit for detecting the temperature in the conveying channel, wherein the heating unit heats the conveying channel according to the temperature detected by the temperature sensing unit to control the temperature of at least one part of the conveying channel to be maintained at the second temperature.
Preferably, the ashing equipment further comprises a wafer transfer box connected with the cooling chamber to receive the ashed wafer cooled in the cooling chamber.
Preferably, the transfer channel further comprises a vacuum transfer module connected to the reaction chamber for receiving the ashed wafer transferred from the reaction chamber; the pre-vacuum transmission module is connected with the vacuum transmission module and used for receiving the ashed wafer transmitted by the vacuum transmission module; and the atmosphere transmission module is connected with the pre-vacuum transmission module and used for receiving the ashed wafer transmitted by the pre-vacuum transmission module.
Preferably, the temperature in the vacuum transfer module is the second temperature.
Preferably, the temperature in the pre-vacuum transfer module is the second temperature.
Preferably, the vacuum transfer module is a cavity; the vacuum transmission module is provided with a cavity wall; the heating unit is arranged in the cavity wall and used for heating the interior of the cavity; and at least one part of the temperature sensing unit is arranged in the cavity and used for detecting the temperature in the cavity, wherein the heating unit heats the interior of the cavity according to the temperature detected by the temperature sensing unit so as to maintain the temperature in the cavity as the second temperature.
According to another aspect of the invention, an ashing method is provided, which comprises the steps of carrying out an ashing reaction on a wafer at a first temperature to obtain an ashed wafer; conveying the ashed wafer, wherein at least one section in the conveying process is at a second temperature; and cooling the ashed wafer at a third temperature, wherein the second temperature is lower than the first temperature, and the third temperature is lower than the second temperature.
According to the ashing equipment and the ashing method provided by the embodiment of the invention, the wafer undergoes a temperature gradient in the process of transferring from the reaction chamber to the cooling chamber, so that the temperature shock is avoided, and the wafer is prevented from being broken due to a large temperature difference.
According to the ashing equipment and the ashing method provided by the embodiment of the invention, the temperature sensing unit is matched with the heating unit, so that the conveying channel can be maintained at a required temperature, and the temperature gradient is kept stable.
According to the ashing equipment and the ashing method provided by the embodiment of the invention, improvement is carried out on the basis of the existing device, and the ashing equipment and the ashing method are simple and convenient in modification method and high in applicability.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
FIG. 1 is a schematic view of an apparatus for ashing equipment according to an embodiment of the present invention;
FIG. 2 is a schematic structural view showing an ashing apparatus according to an embodiment of the present invention;
FIG. 3 shows a schematic structural diagram of a vacuum transfer module according to an embodiment of the present invention;
FIG. 4 shows a method flow diagram of an ashing method according to an embodiment of the invention.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, certain well-known elements may not be shown in the figures.
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of components, are set forth in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
It will be understood that when a layer, region or layer is referred to as being "on" or "over" another layer, region or layer in describing the structure of the component, it can be directly on the other layer, region or layer or intervening layers or regions may also be present. Also, if the component is turned over, one layer or region may be "under" or "beneath" another layer or region.
As described in the background section, the ashing apparatus and ashing method of the prior art have a combination of large stress and large temperature difference, and the wafer is easily chipped in the cooling chamber (cooling station).
Taking the prior art, taking the suprema model produced by mattson (martenson technologies) used in CT-STRIP (name of process site) as an example, the inventors found that the above phenomenon occurs because, when ashing (ash) is performed using the mattson model, in order to ensure WPH (wafer per hour, number of wafers processed per hour), the electrostatic chuck (ESC) of the machine is stabilized at 275 ℃ during the subsequent ashing process to ensure the reaction rate. At the end of the process, the wafer (wafer) is directly taken out by the robot (arm), placed in a cooling chamber (cooling station) at 23 ℃ for a period of time by a Vacuum Transfer Module (VTM), and then transferred back to the FOUP (Front Opening Unified Pod).
With the continuous development of semiconductor technology, the number of layers and the thickness of the wafer are gradually increased, the stress on the surface of the wafer is increased, the time of the conventional CMOS process (process) is short (no more than 1 minute), the temperature of the wafer is low, and the wafer can be barely adapted to the conventional process. However, the current core-loop process (core-loop process) takes a long time (15-20 minutes), the temperature of the wafer is closer to 275 ℃, and the wafer is more prone to chipping in the cooling chamber due to the larger temperature difference of the stress combination (combination).
The applicant has noted the above problems and has proposed an ashing apparatus and ashing method capable of reducing the incidence of chipping.
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.
FIG. 1 is a schematic view of an ashing apparatus according to an embodiment of the present invention. As shown in fig. 1, the ashing apparatus according to an embodiment of the present invention includes a reaction chamber 10, a transfer passage 20, and a cooling chamber 30.
Specifically, the reaction chamber 10 is used for ashing a wafer, and an ashed wafer is obtained. Wherein the temperature of the ashing process is a first temperature. Alternatively, the wafer is placed in the reaction chamber 10, and plasma gas is injected. The plasma gas and the Photoresist (PR) on the wafer surface undergo an ashing reaction to generate volatile substances, so that the photoresist is etched (Etch) and removed. The plasma gas, for example, comprises O2(oxygen), as a free radical, can react with carbon-hydrogen (C-H) species in the photoresist to form volatile species, such as carbon dioxide (CO)2) And water vapor (H)2O); nitrogen (N)2) As a catalyst for the reaction of the plasma gas with the photoresist;H2N2(mixed nitrogen and hydrogen) in which H ions can react with implant species such As arsenic (As), boron (B), phosphorus (P) to form volatile species. The temperature of the ashing process is a first temperature, and the first temperature may be set according to a specific ashing reaction. Optionally, the wafer is placed on an electrostatic adsorption/heating disk in the reaction chamber 10. Alternatively, the temperature of the electrostatic chuck is a first temperature when the ashing process is performed.
The transfer passage 20 is connected to the reaction chamber 10 for transferring the ashed wafer. Wherein the temperature of at least a portion of the transfer passage 20 is the second temperature. The second temperature is lower than the first temperature. Alternatively, the ashed wafers in the reaction chamber 10 after ashing are transferred to the transfer passage 20 and transferred elsewhere via the transfer passage 20. Optionally, the post-ash wafer transfer is accomplished by a robotic arm. Optionally, at least a portion of the conveying passage 20 is heated by gas heating or radiation heating, etc. to make the temperature of at least a portion of the conveying passage 20 at the second temperature. The heating method is not limited to the above method, and may be direct heating or indirect heating.
In an alternative embodiment of the present invention, the transfer passage 20 includes a plurality of temperature zones (a plurality of temperature gradients), i.e., at least a portion of the transfer passage 20 has a second temperature and at least a portion has a fourth temperature … …. Preferably, the transfer passage 20 includes a plurality of temperature zones having different temperatures, and the temperature of each temperature zone is gradually decreased according to the transfer arrival order of the ashed wafers. Optionally, the temperature at any one of the transfer passages 20 is higher than the temperature in the cooling chamber.
In an alternative embodiment of the invention, the transfer channel 20 comprises a heating unit. The heating unit is used for heating the transfer passage 20.
In an alternative embodiment of the invention, the transfer channel 20 comprises a temperature sensing unit and a heating unit. The temperature sensing unit is used to detect the temperature in the transfer passage 20. The heating unit is used for heating the transfer passage 20. Alternatively, the heating unit heats the transfer passage 20 according to the temperature detected by the temperature sensing unit to control the temperature of the transfer passage 20. Optionally, the temperature of at least a portion of the conveyor channel 20 is controlled to be maintained at the second temperature in cooperation with the temperature sensing unit and the heating unit.
A cooling chamber 30 is connected to the transfer passage 20 to receive the ashed wafer and for cooling the ashed wafer. Wherein the temperature of cooling is a third temperature. The third temperature is lower than the second temperature. Alternatively, the ashed wafer after ashing treatment in the reaction chamber 10 is transferred to the transfer passage 20 and transferred to the cooling chamber 30 through the transfer passage 20. Alternatively, the transfer of the ashed wafer from the reaction chamber 10 to the cooling chamber 10 via the transfer passage 20 is achieved by a robot arm.
In the above embodiment of the present invention, the wafer undergoes a temperature gradient (sequentially passing through the first temperature, the second temperature and the third temperature) during the process of transferring from the reaction chamber to the cooling chamber, so as to avoid temperature quenching and prevent the wafer from being broken due to a large temperature difference.
Fig. 2 is a schematic structural view showing an ashing apparatus according to an embodiment of the present invention. As shown in fig. 2, the asher equipment according to the embodiment of the present invention includes a reaction chamber 10, a transfer passage 20, a cooling chamber 30, and a pod 40. Wherein the transfer passage 20 includes a vacuum transfer module 21, a pre-vacuum transfer module 22, and an atmospheric transfer module 23.
Specifically, the reaction chamber (chamber)10 is used for ashing processing of a wafer. The temperature of the ashing process in the reaction chamber 10 is a first temperature. And obtaining the ashed wafer after the ashing treatment of the wafer. Optionally, an electrostatic chuck (ESC) is disposed in the reaction chamber 10. The electrostatic adsorption disc is used for placing a wafer. The wafer is placed on an electrostatic chuck and plasma gas is injected. The plasma gas and the Photoresist (PR) on the wafer surface undergo an ashing reaction to generate volatile substances, so that the photoresist is etched (Etch) and removed. Optionally, the electrostatic chuck has a heating function. During the ashing process, the electrostatic chuck is stabilized at the first temperature to ensure the reaction rate. Alternatively, the first temperature is 275 ℃.
The transfer passage 20 is connected to the reaction chamber 10 for transferring the ashed wafer. The temperature of at least a portion of the transfer passage 20 is the second temperature. The second temperature is lower than the first temperature. The transfer passage 20 includes a vacuum transfer module 21, a pre-vacuum transfer module 22, and an atmospheric transfer module 23. The vacuum transfer module 21, the pre-vacuum transfer module 22 and the atmospheric transfer module 23 are, for example, different chambers.
A vacuum transfer module (VTM/TM) 21 is connected to the reaction chamber 10 for receiving the ashed wafers from the reaction chamber 10. In the vacuum transfer module 21, the wafer is sealed and evacuated after being transferred in. The temperature in the vacuum transfer module 21 is, for example, a second temperature, which is lower than the first temperature. Optionally, the second temperature is 150 ℃.
A heating unit is provided in the vacuum transfer module 21. The heating unit is used for heating the vacuum transfer module 21. Optionally, a temperature sensing unit is further disposed in the vacuum transfer module 21. The temperature sensing unit is used to detect the temperature of the vacuum transfer module 21. Under the cooperation of the heating unit and the temperature sensing unit, the temperature in the vacuum transfer module 21 is controlled to be the second temperature.
The pre-vacuum transfer module (LL)22 is connected to the vacuum transfer module 21 for receiving the ashed wafers from the vacuum transfer module 21. During the wafer transfer from the vacuum transfer module 21 to the pre-vacuum transfer module 22, the doors on both sides of the pre-vacuum transfer module 22 are closed to prevent backflow. Optionally, the pre-vacuum transfer module 22 is turned off during the transfer of the wafer from the reaction chamber 10 to the vacuum transfer module. Alternatively, the temperature in the pre-vacuum transfer module 22 is, for example, a second temperature, which is lower than the first temperature. The second temperature is, for example, 150 ℃.
An Atmospheric Transfer Module (ATM)23 is coupled to the pre-vacuum transfer module 22 for receiving the ashed wafers from the pre-vacuum transfer module 22. The atmosphere transfer module 23 is, for example, in communication with the atmosphere. Optionally, the atmospheric transfer module 23 is further connected to the foup 40 and takes out the wafer from the foup 40.
The cooling chamber 30 is connected to the atmospheric transport module 23 for receiving the ashed wafers from the atmospheric transport module 23. The cooling chamber 30 is used for cooling the ashed wafer. The temperature in the cooling chamber 30 is, for example, a third temperature, which is lower than the second temperature. Alternatively, the third temperature is 23 ℃.
The foup 40 is connected to the cooling chamber 30 to receive the cooled ashed wafers. The ashed wafer is placed in the cooling chamber 30 to be cooled for a certain period of time and then transferred back to the pod 40. The FOUP 40 is, for example, a Front Opening Unified Pod (FOUP).
In an alternative embodiment of the present invention, the ashing equipment according to an embodiment of the present invention is modified from the existing equipment. The ashing equipment is, for example, a suprema model manufactured by mattson (martenson technologies) used in CT-STRIP (name of process station). The wafer is subjected to ashing treatment in the reaction chamber 10. During the ashing process, the electrostatic adsorption plate in the reaction chamber 10 was stabilized at 275 ℃ (first temperature). At the end of the ashing process, the ashed wafer is directly taken out by the robot arm, and is placed in the cooling chamber 30 of 23 ℃ (third temperature) for cooling for a while after passing through the vacuum transfer module 21, the pre-vacuum transfer module 22 and the atmospheric transfer module 23 in sequence, and is then transferred back to the pod 40. When the ashed wafer is in the vacuum transfer module 21 or the pre-vacuum transfer module 22, the temperature in the vacuum transfer module 21 or the pre-vacuum transfer module 22 is 150 ℃ (second temperature).
Fig. 3 shows a schematic structural view of a vacuum transfer module according to an embodiment of the present invention. As shown in fig. 3, the vacuum transfer module 21 according to the embodiment of the present invention is a chamber including a chamber wall 211, a heating unit 212, and a temperature sensing unit 213.
Specifically, the vacuum transfer module 21 is a chamber including a chamber wall 211. Alternatively, the vacuum transfer module 21 is a relatively independent chamber, and the chamber can be controlled to switch between closed and non-closed states.
A heating unit 212 is disposed within the chamber wall 211 for heating the interior of the chamber. The heating unit 212 includes, for example, a resistance wire. Optionally, heating unit 212 is disposed circumferentially within chamber wall 211.
At least a portion (e.g., a probe portion) of the temperature sensing unit 213 is disposed inside the cavity for detecting a temperature inside the cavity. Optionally, the temperature sensing unit 213 detects the temperature inside the cavity. When the temperature sensing unit 213 detects that the temperature inside the chamber is lower than a predetermined temperature (e.g., a second temperature), the heating unit 212 heats the chamber to increase the temperature inside the chamber to the second temperature. Alternatively, when the temperature sensing unit 213 detects that the temperature inside the chamber is the second temperature, the heating unit 212 operates at a predetermined power to maintain the temperature inside the chamber at the second temperature. Optionally, the heating unit 212 heats the inside of the chamber according to the temperature detected by the temperature sensing unit 213 to maintain the temperature inside the chamber at the second temperature.
In the above embodiments of the present invention, the overall temperature within the vacuum transfer module is controlled by adding a temperature sensing unit and a heating unit within the chamber walls of the vacuum transfer module.
In the above embodiments of the present invention, the temperature sensing unit is used for detecting the temperature inside the chamber, the heating unit is used for adjusting the temperature inside the chamber, and the vacuum transfer module can be maintained at a desired temperature by the cooperation of the temperature sensing unit and the heating unit.
In the above embodiments of the present invention, the ashing equipment according to the embodiments of the present invention can be obtained by modifying the existing apparatus, and the modification method is simple and convenient, and has high applicability.
FIG. 4 shows a method flow diagram of an ashing method according to an embodiment of the invention. As shown in fig. 4, the ashing method according to an embodiment of the present invention includes the steps of:
step S401: carrying out an ashing reaction on the wafer at a first temperature to obtain an ashed wafer;
the wafer is placed in a reaction chamber and plasma gas is injected. And (3) performing ashing reaction on the Photoresist (PR) on the surface of the wafer by using the plasma gas at a first temperature to generate volatile substances, so that the photoresist is etched (Etch) and removed to obtain an ashed wafer. Alternatively, the first temperature is 275 ℃.
Step S402: conveying the ashed wafer, wherein at least one section in the conveying process is at a second temperature;
and transferring the ashed wafer from the reaction chamber to a cooling chamber. At least one section of the wafer transfer process is at a second temperature, the second temperature being lower than the first temperature. Optionally, the second temperature is 150 ℃. Optionally, an initial segment of the wafer transfer process is at a second temperature.
In an alternative embodiment of the invention, during the wafer transfer process, the ashed wafer sequentially passes through a plurality of temperature intervals with different temperatures. Preferably, the temperatures of a plurality of temperature ranges through which the wafer sequentially passes after ashing are sequentially decreased.
Step S403: and cooling the wafer at a third temperature after ashing.
After the ashed wafer is transferred to the cooling chamber, cooling is performed in the cooling chamber at a third temperature, which is lower than the second temperature. Alternatively, the third temperature is 23 ℃.
In the above embodiments of the present invention, the ashed wafer undergoes a temperature gradient during the transfer from the reaction chamber to the cooling chamber, thereby avoiding a rapid temperature quenching and preventing the wafer from being broken due to a large temperature difference.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (9)
1. An ashing apparatus, comprising:
the reaction chamber is used for ashing the wafer to obtain an ashed wafer;
the transmission channel is connected with the reaction chamber and is used for transmitting the ashed wafer to a cooling chamber; and
the cooling chamber is connected with the transmission channel to receive the ashed wafer and is used for cooling the ashed wafer,
wherein the temperature of the ashing treatment is a first temperature;
the temperature of at least a portion of the transfer passage is a second temperature;
the temperature of the cooling chamber is a third temperature;
the second temperature is lower than the first temperature, and the third temperature is lower than the second temperature;
the conveying channel is provided with a heating unit, and the heating unit is used for heating the conveying channel.
2. The ashing apparatus of claim 1, wherein the reaction chamber further comprises:
an electrostatic chuck for placing the wafer,
wherein, when the ashing treatment is carried out, the temperature of the electrostatic adsorption disc is the first temperature.
3. The asher equipment as set forth in claim 1, wherein the transfer passage further comprises:
a temperature sensing unit for detecting a temperature in the transfer passage,
wherein the heating unit heats the conveying channel according to the temperature detected by the temperature sensing unit so as to control the temperature of at least one part of the conveying channel to be maintained at the second temperature.
4. The ashing apparatus as claimed in claim 1, further comprising:
a wafer transfer box connected with the cooling chamber to receive the ashed wafer cooled in the cooling chamber.
5. The ashing apparatus according to any one of claims 1 to 4, wherein the transfer passage further comprises:
the vacuum transmission module is connected with the reaction chamber and used for receiving the ashed wafer transmitted by the reaction chamber;
the pre-vacuum transmission module is connected with the vacuum transmission module and used for receiving the ashed wafer transmitted by the vacuum transmission module; and
and the atmosphere transmission module is connected with the pre-vacuum transmission module and is used for receiving the ashed wafer transmitted by the pre-vacuum transmission module.
6. The ashing apparatus of claim 5, wherein the temperature in the vacuum transfer module is the second temperature.
7. The asher equipment as set forth in claim 5, wherein the temperature in the pre-vacuum transfer module is the second temperature.
8. The ashing apparatus of claim 5, wherein the vacuum transfer module is a chamber; the vacuum transfer module is provided with:
a chamber wall;
the heating unit is arranged in the cavity wall and used for heating the interior of the cavity; and
a temperature sensing unit, at least a portion of which is disposed inside the cavity, for detecting a temperature inside the cavity,
the heating unit heats the interior of the cavity according to the temperature detected by the temperature sensing unit so as to maintain the temperature of the interior of the cavity as the second temperature.
9. An ashing method using the ashing apparatus according to any one of claims 1 to 8, comprising:
carrying out ashing reaction on the wafer at a first temperature to obtain an ashed wafer;
conveying the ashed wafer, wherein at least one section in the conveying process is at a second temperature; and
the ashed wafer is cooled at a third temperature,
wherein the second temperature is lower than the first temperature and the third temperature is lower than the second temperature.
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| CN112349633A (en) * | 2020-11-17 | 2021-02-09 | 上海谙邦半导体设备有限公司 | Buffer cavity, wafer conveying system and working method thereof |
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| US5914493A (en) * | 1997-02-21 | 1999-06-22 | Nikon Corporation | Charged-particle-beam exposure apparatus and methods with substrate-temperature control |
| JP2006041356A (en) * | 2004-07-29 | 2006-02-09 | Tokyo Ohka Kogyo Co Ltd | Substrate processing equipment |
| CN101553912B (en) * | 2006-12-05 | 2011-05-18 | 芝浦机械电子株式会社 | Robot device, treatment device with the robot device, treatment system and method |
| US9711324B2 (en) * | 2012-05-31 | 2017-07-18 | Axcelis Technologies, Inc. | Inert atmospheric pressure pre-chill and post-heat |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1675748A (en) * | 2002-12-12 | 2005-09-28 | Psk有限公司 | Cluster type asher equipment used for manufacture of semiconductor device |
| CN112349633A (en) * | 2020-11-17 | 2021-02-09 | 上海谙邦半导体设备有限公司 | Buffer cavity, wafer conveying system and working method thereof |
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