CN113092976A - Radio frequency microwave high-power device test system and test method - Google Patents
Radio frequency microwave high-power device test system and test method Download PDFInfo
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- CN113092976A CN113092976A CN202110287386.9A CN202110287386A CN113092976A CN 113092976 A CN113092976 A CN 113092976A CN 202110287386 A CN202110287386 A CN 202110287386A CN 113092976 A CN113092976 A CN 113092976A
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Abstract
The invention provides a system and a method for testing a radio frequency microwave high-power device, which comprises the following steps: a pulse generator for generating periodic pulses; the microwave signal source is used for generating a radio frequency excitation signal according to the periodic pulse and inputting the radio frequency excitation signal into a radio frequency microwave high-power device; the direct current stabilized power supply is used for providing a constant direct current signal; the pulse modulator is used for modulating the constant direct current signal into a direct current pulse signal according to the periodic pulse and inputting the direct current pulse signal into the radio frequency microwave high-power device; the Hall current probe is used for collecting direct current on the radio frequency microwave high-power device and converting the direct current into direct current voltage; and the high-precision digital multimeter is used for measuring the direct-current voltage according to the periodic pulse. The system and the method for testing the radio frequency microwave high-power device realize the direct current test of the radio frequency microwave high-power device through the high-precision digital multimeter and the Hall current probe, and have the advantages of accuracy and low cost.
Description
Technical Field
The invention relates to a test system and a test method, in particular to a test system and a test method for a radio frequency microwave high-power device.
Background
In recent years, with the progress and development of semiconductor processes and materials, the integration degree of third generation semiconductor radio frequency microwave power devices represented by gallium nitride (GaN) is higher and higher, and the output power is also higher and higher. In order to solve the heat dissipation problem, the working mode generally adopts pulse modulation. Accordingly, the test system is required to have the capability of quickly and accurately measuring all the parameters to be measured in the pulse. Therefore, the development of an accurate, efficient and high-integration radio frequency microwave high-power device test system has very urgent needs and very important practical significance.
The radio frequency microwave high-power device testing system mainly comprises a radio frequency parameter testing subsystem and a direct current parameter testing subsystem. In the prior art, the performance of a radio frequency instrument can well measure radio frequency parameters in extremely narrow pulses (ns magnitude), and the main difficulty is focused on the test of pulse direct current.
At present, the commonly used pulse current testing methods include the following methods;
(1) and measuring the average value of the current by using an ammeter, wherein the measurement precision of the current completely depends on the measurement precision of a built-in or external series ammeter, and the average value of the measured current is divided by the duty ratio to obtain the average value of the pulse working current. But the current test range of this method is relatively limited.
(2) The method comprises the steps of directly connecting a precision resistor with a known resistance in series at a power supply end, measuring voltage on the precision resistor by using a voltmeter, calculating according to ohm's law to obtain a current average value, and dividing by a duty ratio to obtain a pulse working current average value. However, the accuracy of the method is mainly affected by the accuracy of the resistor itself and the temperature change of the resistor, and the current testing range is relatively limited.
(3) The pulse current is directly measured by using a special pulse power supply, the carrying capacity and the pulse capacity of different pulse power supplies are greatly different, and the corresponding cost is also greatly different. Therefore, most of the capabilities of the pulse power supply are not suitable for the test requirements of the radio frequency high-power device.
In summary, the current testing scheme of the radio frequency microwave high-power device in the prior art has the problems of inaccurate current measurement, inconvenient operation, high cost, poor universality and the like due to the technical and cost limitations.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a system and a method for testing a rf microwave high-power device, which implement a dc test of the rf microwave high-power device through a high-precision digital multimeter and a hall current probe, and are accurate, efficient, and low in cost.
In order to achieve the above and other related objects, the present invention provides a testing system for rf microwave high power devices, comprising: a pulse generator for generating periodic pulses; the microwave signal source is connected with the pulse generator and used for generating a radio frequency excitation signal according to the periodic pulse and inputting the radio frequency excitation signal into a radio frequency microwave high-power device; the isolator is connected with the microwave signal source and the radio frequency microwave high-power device and is used for realizing the unidirectional transmission and protection of the radio frequency excitation signal to the radio frequency microwave high-power device; the direct current stabilized power supply is used for providing a constant direct current signal; the pulse modulator is connected with the direct current stabilized voltage supply, the pulse generator and the radio frequency microwave high-power device and used for modulating the constant direct current signal into a direct current pulse signal according to the periodic pulse and inputting the direct current pulse signal into the radio frequency microwave high-power device; the Hall current probe is connected with the radio frequency microwave high-power device and used for collecting direct current on the radio frequency microwave high-power device and converting the direct current into direct current voltage; and the high-precision digital multimeter is connected with the pulse generator and the Hall current probe and is used for measuring the direct-current voltage according to the periodic pulse.
In one embodiment of the invention, the system further comprises a high-power attenuator, a directional coupler, a spectrum analyzer and a microwave power meter;
the high-power attenuator is connected with the radio frequency microwave high-power device and is used for attenuating the microwave signal output by the radio frequency microwave high-power device;
the directional coupler is connected with the high-power attenuator and is used for coupling the attenuated microwave signals into two paths;
the spectrum analyzer is connected with the directional coupler and is used for acquiring the spectrum information of the coupled microwave signal;
and the microwave power meter is connected with the directional coupler and used for testing the power information of the coupled microwave signals.
Correspondingly, the invention provides a test method of the radio frequency microwave high-power device test system, which comprises the following steps:
obtaining an initial voltage V on the Hall current probeRef；
Adjusting the direct-current voltage gear of the high-precision digital multimeter to a matching range;
obtaining the output voltage V of the Hall current probe measured by the high-precision digital multimeterMeas；
According to IAct＝(VMeas-VRef) And the conversion ratio obtains the direct current size of the radio frequency microwave high-power device, wherein the conversion ratio is the conversion ratio of the Hall current probe.
In an embodiment of the present invention, the method further includes preheating the rf microwave high-power device test system before the test is started.
In an embodiment of the present invention, the preheating time period is more than half an hour.
In an embodiment of the present invention, the obtaining of the initial voltage on the hall current probe includes the following steps:
connecting the Hall current probe with the high-precision digital multimeter;
and placing the high-precision digital multimeter at the gear of the lowest range of the direct-current voltage, connecting the Hall current probe to a closed-loop coil, adjusting the position of a knob of the Hall current probe to ensure that the reading of the high-precision digital multimeter is minimum, and recording the reading of the corresponding high-precision digital multimeter, namely the initial voltage.
The invention provides a test method of the radio frequency microwave high-power device test system, which comprises the following steps:
obtaining an initial voltage V on the Hall current probeRef；
Adjusting the direct-current voltage gear of the high-precision digital multimeter to a proper range;
obtaining the output voltage V of the Hall current probe measured by the high-precision digital multimeterMeas；
According to IAct＝(VMeas-VRef) The direct current of the radio frequency microwave high-power device is obtained through a conversion ratio, wherein the conversion ratio is the conversion ratio of the Hall current probe;
and acquiring one or more of a power gain parameter, a power gain flatness parameter, a harmonic suppression parameter and a clutter suppression parameter according to the frequency spectrum information and the power information.
In an embodiment of the present invention, the power gain parameter Gp is Pout-Pin; the power gain flatness parameter Δ G is Gpmax-Gpmin; the harmonic suppression parameter RH is PoutF-PoutH; the clutter suppression parameter RC is PoutF-PoutC; wherein Pout represents output power, Pin represents input power, Gpmax represents maximum power gain, Gpmin represents minimum power gain, PoutF represents fundamental output power, PoutH represents harmonic output power, and PoutC represents clutter output power.
As mentioned above, the system and the method for testing the radio frequency microwave high-power device have the following beneficial effects:
(1) the direct current test of the radio frequency microwave high-power device is realized through a high-precision digital multimeter and a Hall current probe based on a Hall effect and current calibration method;
(2) the working current of the radio frequency microwave high-power device can be measured more accurately, efficiently and at low cost;
(3) the precision and the efficiency of the direct current test of the radio frequency microwave high-power device are effectively improved.
Drawings
FIG. 1 is a schematic structural diagram of an RF microwave high-power device testing system according to another embodiment of the present invention.
Description of the element reference numerals
1 pulse generator
2 microwave signal source
3 radio frequency microwave high-power device
4 isolator
5 D.C. regulated power supply
6 pulse modulator
7 Hall current probe
8 high-precision digital multimeter
9 high-power attenuator
10 directional coupler
11 spectrum analyzer
12 microwave power meter
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
The testing system and the testing method of the radio frequency microwave high-power device realize the direct current test of the radio frequency microwave high-power device by combining the high-precision digital multimeter and the Hall current probe, have high accuracy and low cost, and have high practicability.
As shown in fig. 1, in an embodiment, the rf microwave high power device testing system of the present invention includes:
the pulse generator 1 is used for generating periodic pulses so as to provide reference timing for the whole test system by using the periodic pulses.
And the microwave signal source 2 is connected with the pulse generator 1 and used for generating a radio frequency excitation signal according to the periodic pulse and inputting the radio frequency excitation signal into the radio frequency microwave high-power device 3.
And the isolator 4 is connected with the microwave signal source 2 and the radio frequency microwave high-power device 3 and is used for realizing the unidirectional transmission and protection of the radio frequency excitation signal to the radio frequency microwave high-power device 3. Specifically, the isolator 4 is disposed between the microwave signal source 2 and the rf microwave high-power device 3, so that only one-way signal transmission from the rf excitation signal to the rf microwave high-power device 3 can be achieved, and interference between signals is avoided.
And the direct current stabilized power supply 5 is used for providing a constant direct current signal.
And the pulse modulator 6 is connected with the direct-current stabilized voltage supply 5, the pulse generator 1 and the radio-frequency microwave high-power device 3, and is used for modulating the constant direct-current signal into a direct-current pulse signal according to the periodic pulse and inputting the direct-current pulse signal into the radio-frequency microwave high-power device. Specifically, the pulse modulator 6 uses the periodic pulse as a reference timing sequence, generates a direct current pulse signal from the constant direct current signal, and inputs the direct current pulse signal to the rf microwave high-power device 3.
And the Hall current probe 7 is connected with the radio frequency microwave high-power device 3 and is used for collecting direct current on the radio frequency microwave high-power device 3 and converting the direct current into direct current voltage. The nature of the hall effect is the deflection of moving charged particles in a magnetic field caused by the action of lorentz forces. When electrically charged particles are confined in a solid material, this deflection results in the accumulation of positive and negative charges in the direction of the vertical current and magnetic field, thereby forming an additional transverse electric field, the hall electric field. The Hall current probe based on the Hall effect has high sensitivity, high response speed, large signal-to-noise ratio and wide dynamic range, and is very suitable for the related parameter test of the radio frequency microwave high-power device 3. Specifically, the hall current probe 7 collects the direct current on the radio frequency microwave high-power device 3 and converts the direct current into direct voltage.
And the high-precision digital multimeter 8 is connected with the pulse generator 1 and the Hall current probe 7 and is used for measuring the direct-current voltage according to the periodic pulse. The high-precision digital multimeter 8 has high testing precision and sampling speed, can accurately and quickly directly test the condition of direct current parameters in pulses by matching with the Hall current probe 7, and is very suitable for direct current testing of the radio frequency microwave high-power device 3. Specifically, the high-precision digital multimeter 8 triggers the measurement operation of the dc voltage according to the periodic pulse as a reference timing reference. And according to the direct-current voltage acquired by the high-precision digital multimeter 8, the direct-current voltage on the radio-frequency microwave high-power device 3 can be calculated.
As shown in fig. 1, in an embodiment of the present invention, the rf microwave high-power device testing system of the present invention further includes a high-power attenuator 9, a directional coupler 10, a spectrum analyzer 11, and a microwave power meter 12.
The high-power attenuator 9 is connected with the radio frequency microwave high-power device 3 and is used for attenuating the microwave signal output by the radio frequency microwave high-power device 3 so as to meet the requirement of a subsequent circuit on the level.
The directional coupler 10 is connected with the high-power attenuator 9 and is used for coupling the attenuated microwave signals into a coupling end and a straight-through end.
The spectrum analyzer 11 is connected to the coupling end of the directional coupler 10, and is configured to acquire spectrum information such as harmonic and clutter of the coupled microwave signal.
The microwave power meter 12 is connected to the through end of the directional coupler 10, and is configured to test power information of the coupled microwave signal, where the power information includes one or more combinations of output power, input power, maximum power gain, minimum power gain, fundamental output power, harmonic output power, and clutter output power.
The invention relates to a test method of a radio frequency microwave high-power device test system, which comprises the following steps:
step S1, obtaining the initial voltage V on the Hall current probeRef。
Specifically, in order to ensure the accuracy of the test result, the hall current probe needs to be calibrated first to obtain the initial voltage thereon. In an embodiment of the present invention, the obtaining of the initial voltage on the hall current probe includes the following steps:
11) and connecting the Hall current probe with the high-precision digital multimeter.
Firstly, the Hall current probe is separately connected with the high-precision digital multimeter.
12) And placing the high-precision digital multimeter at the gear of the lowest range of the direct-current voltage, connecting the Hall current probe to a closed-loop coil, adjusting the position of a knob of the Hall current probe to ensure that the reading of the high-precision digital multimeter is minimum, and recording the reading of the corresponding high-precision digital multimeter, namely the initial voltage.
And step S2, adjusting the direct-current voltage gear of the high-precision digital multimeter to a matching range.
Specifically, according to the estimated size of the measured direct-current voltage, a matched voltage range is selected on the high-precision digital multimeter. Preferably, the accuracy of the measured voltage in the measuring range is 1/3-2/3. The matching range is selected according to this principle.
Step S3, obtaining the output voltage V of the Hall current probe measured by the high-precision digital multimeterMeas。
Specifically, the high-precision digital multimeter is adopted to measure the output voltage of the Hall current probe to obtain VMeas。
Step S4, according to IAct＝(VMeas-VRef) The conversion ratio is larger than that of the radio frequency microwaveThe direct current magnitude of the power device, wherein the conversion ratio is the conversion ratio of the Hall current probe.
Specifically, the direct current of the radio frequency microwave high-power device is VMeas-VRef) Conversion ratio. Wherein, the conversion ratio is the attribute data of the Hall current probe and is provided by a manufacturer.
In an embodiment of the present invention, the method for testing the rf microwave high-power device testing system further includes preheating the rf microwave high-power device testing system for more than half an hour before starting the test, so as to ensure the accuracy of the test data.
When the radio frequency microwave high-power device testing system further comprises a high-power attenuator, a directional coupler, a spectrum analyzer and a microwave power timer, the testing method of the radio frequency microwave high-power device testing system further comprises the step of acquiring one or more of a power gain parameter, a power gain flatness parameter, a harmonic suppression parameter and a clutter suppression parameter according to the frequency spectrum information and the power information.
Wherein the power gain parameter Gp is Pout-Pin; the power gain flatness parameter Δ G is Gpmax-Gpmin; the harmonic suppression parameter RH is PoutF-PoutH; the clutter suppression parameter RC is PoutF-PoutC; wherein Pout represents output power, Pin represents input power, Gpmax represents maximum power gain, Gpmin represents minimum power gain, PoutF represents fundamental output power, PoutH represents harmonic output power, and PoutC represents clutter output power.
In summary, the testing system and the testing method of the radio frequency microwave high-power device of the invention realize the direct current test of the radio frequency microwave high-power device through the high-precision digital multimeter and the Hall current probe based on the Hall effect and the current calibration method; the working current of the radio frequency microwave high-power device can be measured more accurately, efficiently and at low cost; the precision and the efficiency of the direct current test of the radio frequency microwave high-power device are effectively improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A radio frequency microwave high-power device test system is characterized in that: the method comprises the following steps:
a pulse generator for generating periodic pulses;
the microwave signal source is connected with the pulse generator and used for generating a radio frequency excitation signal according to the periodic pulse and inputting the radio frequency excitation signal into a radio frequency microwave high-power device;
the isolator is connected with the microwave signal source and the radio frequency microwave high-power device and is used for realizing the unidirectional transmission and protection of the radio frequency excitation signal to the radio frequency microwave high-power device;
the direct current stabilized power supply is used for providing a constant direct current signal;
the pulse modulator is connected with the direct current stabilized voltage supply, the pulse generator and the radio frequency microwave high-power device and used for modulating the constant direct current signal into a direct current pulse signal according to the periodic pulse and inputting the direct current pulse signal into the radio frequency microwave high-power device;
the Hall current probe is connected with the radio frequency microwave high-power device and used for collecting direct current on the radio frequency microwave high-power device and converting the direct current into direct current voltage;
and the high-precision digital multimeter is connected with the pulse generator and the Hall current probe and is used for measuring the direct-current voltage according to the periodic pulse.
2. The system for testing a radio frequency microwave high-power device according to claim 1, characterized in that: the system also comprises a high-power attenuator, a directional coupler, a spectrum analyzer and a microwave power meter;
the high-power attenuator is connected with the radio frequency microwave high-power device and is used for attenuating the microwave signal output by the radio frequency microwave high-power device;
the directional coupler is connected with the high-power attenuator and is used for coupling the attenuated microwave signals into two paths;
the spectrum analyzer is connected with the directional coupler and is used for acquiring the spectrum information of the coupled microwave signal;
and the microwave power meter is connected with the directional coupler and used for testing the power information of the coupled microwave signals.
3. A testing method of the testing system of the radio frequency microwave high-power device according to claim 1, characterized in that: the method comprises the following steps:
obtaining an initial voltage V on the Hall current probeRef；
Adjusting the direct-current voltage gear of the high-precision digital multimeter to a matching range;
obtaining the output voltage V of the Hall current probe measured by the high-precision digital multimeterMeas；
According to IAct＝(VMeas-VRef) And the conversion ratio obtains the direct current size of the radio frequency microwave high-power device, wherein the conversion ratio is the conversion ratio of the Hall current probe.
4. The testing method of the testing system of the radio frequency microwave high-power device according to claim 3, characterized in that: and preheating the radio frequency microwave high-power device testing system before the test is started.
5. The method for testing the radio frequency microwave high-power device testing system according to claim 4, characterized in that: the preheating time is more than half an hour.
6. The testing method of the testing system of the radio frequency microwave high-power device according to claim 3, characterized in that: the step of obtaining the initial voltage on the Hall current probe comprises the following steps:
connecting the Hall current probe with the high-precision digital multimeter;
and placing the high-precision digital multimeter at the gear of the lowest range of the direct-current voltage, connecting the Hall current probe to a closed-loop coil, adjusting the position of a knob of the Hall current probe to ensure that the reading of the high-precision digital multimeter is minimum, and recording the reading of the corresponding high-precision digital multimeter, namely the initial voltage.
7. A testing method of the testing system of the radio frequency microwave high-power device according to claim 2, characterized in that: the method comprises the following steps:
obtaining an initial voltage V on the Hall current probeRef；
Adjusting the direct-current voltage gear of the high-precision digital multimeter to a proper range;
obtaining the output voltage V of the Hall current probe measured by the high-precision digital multimeterMeas；
According to IAct＝(VMeas-VRef) The direct current of the radio frequency microwave high-power device is obtained through a conversion ratio, wherein the conversion ratio is the conversion ratio of the Hall current probe;
and acquiring one or more of a power gain parameter, a power gain flatness parameter, a harmonic suppression parameter and a clutter suppression parameter according to the frequency spectrum information and the power information.
8. The testing method of the testing system of the radio frequency microwave high-power device according to claim 7, characterized in that: the power gain parameter Gp is Pout-Pin; the power gain flatness parameter Δ G is Gpmax-Gpmin; the harmonic suppression parameter RH is PoutF-PoutH; the clutter suppression parameter RC is PoutF-PoutC; wherein Pout represents output power, Pin represents input power, Gpmax represents maximum power gain, Gpmin represents minimum power gain, PoutF represents fundamental output power, PoutH represents harmonic output power, and PoutC represents clutter output power.
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| CN116539952A (en) * | 2023-07-05 | 2023-08-04 | 北京中成康富科技股份有限公司 | Millimeter wave therapeutic apparatus power intelligent sampling method and system based on Internet of things |
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