CN113078251A - High-power LED all-solid-state light source module packaging method and packaging structure thereof - Google Patents
High-power LED all-solid-state light source module packaging method and packaging structure thereof Download PDFInfo
- Publication number
- CN113078251A CN113078251A CN202110282773.3A CN202110282773A CN113078251A CN 113078251 A CN113078251 A CN 113078251A CN 202110282773 A CN202110282773 A CN 202110282773A CN 113078251 A CN113078251 A CN 113078251A
- Authority
- CN
- China
- Prior art keywords
- core
- silicon dioxide
- packaging
- core particles
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000007771 core particle Substances 0.000 claims abstract description 172
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 130
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 65
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 65
- 238000005530 etching Methods 0.000 claims abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010931 gold Substances 0.000 claims abstract description 23
- 229910052737 gold Inorganic materials 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims abstract description 7
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 239000003822 epoxy resin Substances 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 13
- 229920000647 polyepoxide Polymers 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims 1
- 239000008187 granular material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- UCHOFYCGAZVYGZ-UHFFFAOYSA-N gold lead Chemical compound [Au].[Pb] UCHOFYCGAZVYGZ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to the technical field of LED (light emitting diode) packaging, in particular to a method for packaging a high-power LED all-solid-state light source module, which mainly comprises the steps of taking LED core particles, and uniformly coating a fluorescent layer on the surfaces of the LED core particles; the core particles coated with the fluorescent layer are placed in a core particle groove in the inverted template in an inverted mode; adding resin into the inverted template, and taking out the core particle mounting plate formed by combining the resin and the core particles after the resin is cured; adding resin into the inverted template, and taking out the core particle mounting plate formed by combining the resin and the core particles after the resin is cured; and sequentially carrying out photoresist coating, exposure and development on the surface of the polished silicon dioxide film, etching the developed silicon dioxide film, evaporating and plating a layer of gold on the etched silicon dioxide after etching, and removing the residual photoresist on the surface of the silicon dioxide and the gold layer outside the etched groove. The invention effectively improves the packaging efficiency of the LED core particles, and the packaged core particles have longer service life and better luminous capability.
Description
Technical Field
The invention relates to the technical field of LED packaging, in particular to a method for packaging a high-power LED all-solid-state light source module and a packaging structure thereof.
Background
With the continuous development of the light emitting diode display industry, the light emitting diode device is changed from the original DIP structure to the chip structure at a high speed, the light emitting device with the chip structure has the advantages of light weight, smaller size, automatic installation, large light emitting angle, uniform color, less attenuation and the like, and is more and more accepted by people; if the mechanical strength, reliability, moisture resistance, impact resistance, temperature change resistance, weather resistance and global planarization of the product are to be improved under the condition of not changing the overall structure of the product, the product cannot crack, deform and yellow under different climatic conditions, and particularly, a small-spacing high-density light-emitting diode display screen has no better solution in the industry at present.
The mode that the core granule was many through the bonding wire in current LED encapsulation is connected with the wire, the less position that can lead to the routing of LED electrode appears the deviation and the routing beats not glutinous phenomenon mode, LED core granule volume is all very little simultaneously, when constituteing the module with a plurality of core granules, need grab out small core granule once and assemble many core granules together again, packaging efficiency is extremely low, and current core granule passes through the lead wire and is connected with packaging structure's electrode point contact, contact point resistance is higher than the wire, the easy heat that produces leads to the wire to be burnt out.
Disclosure of Invention
The present invention provides a method for packaging a high power LED all-solid-state light source module and a packaging structure thereof, so as to solve the problems mentioned in the background art.
A method for packaging a high-power LED all-solid-state light source module comprises the following steps:
the method comprises the following steps: taking LED core particles, and uniformly coating a fluorescent layer on the surfaces of the LED core particles;
step two: the core particles coated with the fluorescent layer are placed in a core particle groove in the inverted template in an inverted mode;
step three: adding resin into the inverted template, and taking out the core particle mounting plate formed by combining the resin and the core particles after the resin is cured;
step four: depositing a layer of silicon dioxide film on one surface of the core particle mounting plate embedded with the core particles, and polishing the silicon dioxide film to be smooth and flat;
step five: sequentially carrying out photoresist coating, exposure and development on the surface of the polished silicon dioxide film, etching the developed silicon dioxide film, evaporating and plating a layer of gold on the etched silicon dioxide after etching, and removing the residual photoresist on the surface of the silicon dioxide and the gold layer outside the etched groove;
step six: and polishing and grinding the surface, which is not deposited with silicon dioxide, of the core particle mounting plate after the redundant photoresist and the gold layer are removed, mounting the polished core particle mounting plate on a packaging base, and pouring waterproof glue on the edge of the mounted core particle mounting plate.
Preferably, the LED core particles in the first step emit blue light, and the colors of the fluorescent layers are red fluorescent layer and yellow fluorescent layer.
Preferably, the upper end face of the reverse template in the second step is provided with core particle template grooves, at least one group of core particle grooves are formed in the core particle template grooves, the core particle grooves are uniformly arranged in the core particle template grooves, and the size and the position of each core particle groove are matched with those of a core particle.
Preferably, the resin in the third step is epoxy resin, and the end face of the core particle, which faces away from the electrode, is fixed on the epoxy resin.
Preferably, the process of taking out the core grain mounting plate in the third step is that the handle is adhered to the core grain template by using an adhesive, and then the core grain mounting plate is taken down by the handle.
Preferably, in the fourth step, the thickness of the silicon dioxide is 1mm higher than that of the core particles, and the grinding of the silicon dioxide film grinds the positions, where the core particles are fixed, on the core particle mounting plate to be level with the regions, where the core particles are not fixed.
Preferably, in the fifth step, the photoresist on the surface of the silicon dioxide is positive photoresist, the exposed patterns respectively connect P, N poles of the LEDs on the core particle template in series, and the exposure light energy is 240 mj.
Preferably, the etching mode of the silicon dioxide in the fifth step is that the silicon dioxide surface is bombarded by plasma until a motor of P, N poles of the LED core particles is exposed, the etching path comprises two groups of transverse lines and at least one group of vertical lines, the vertical lines are branch lines of the transverse lines, and the thickness of the gold layer evaporated in the fifth step is 1mm higher than the etching depth.
Preferably, the number of the horizontal lines is two, the vertical lines connected with one horizontal line are connected with the P poles of all the LED core particles, and the vertical lines connected with the other horizontal line are connected with the N poles of all the LED core particles.
Preferably, the bottom of the package base in the sixth step is provided with two electrode leads, at least one group of saw teeth is fixedly connected to the leads, the width of the leads is the same as the etching width in the fifth step, and the positions of the leads are matched with the positions of the transverse lines.
A packaging structure for packaging a high-power LED all-solid-state light source module comprises a packaging base and a core particle mounting plate.
Compared with the prior art, the invention has the beneficial effects that: the core particles are fixed through the inverted template, then the epoxy resin is added into the inverted template, and the core particles are fixed on the solidified epoxy resin, compared with the traditional method for fixing the core particles one by one, thus, the speed of fixing the core particles is faster and more stable, and a layer of silicon dioxide film is deposited on one surface of the epoxy resin fixed core particles to protect the core particles, so that the waterproof performance of the core particles is better, exposing the electrode of the core grain by applying photoresist, exposing, developing and etching, plating a layer of gold as an electrode wire inside the etching pattern, meanwhile, the core particles are connected in series and in parallel by the motor, so that the current of the core particles is constant, the luminous brightness is high, all the LED lamps cannot be turned off due to the damage of one LED lamp, at least one group of saw teeth are fixed on the electrode lead at the bottom of the packaging base, and the saw teeth can be tightly combined with the plated gold lead, so that the current supply of the LED module is stable.
Drawings
FIG. 1 is a schematic diagram of the overall structure of the device package structure of the present invention;
FIG. 2 is a diagram illustrating the variation of a die voltage with time according to an embodiment;
FIG. 3 is a graph showing the voltage variation with time of two core particles according to the embodiment;
FIG. 4 is a graph showing the voltage of three cores as a function of time according to the embodiment.
In the figure: 1 core particle mounting plate, 2 packaging base.
Detailed Description
The invention discloses a method for packaging a high-power LED all-solid-state light source module and a packaging structure thereof, which are further detailed by specific embodiments.
Example 1
The method for packaging the high-power LED all-solid-state light source module comprises the following steps:
the method comprises the following steps: taking LED core particles, and uniformly coating a fluorescent layer on the surfaces of the LED core particles;
step two: the core particles coated with the fluorescent layer are placed in a core particle groove in the inverted template in an inverted mode;
step three: adding resin into the inverted template, and taking out the core particle mounting plate 1 formed by combining the resin and the core particles after the resin is cured;
step four: depositing a layer of silicon dioxide film on one surface of the core particle mounting plate 1 embedded with the core particles, and polishing the silicon dioxide film to be smooth and flat;
step five: sequentially carrying out photoresist coating, exposure and development on the surface of the polished silicon dioxide film, etching the developed silicon dioxide film, evaporating and plating a layer of gold on the etched silicon dioxide after etching, and removing the residual photoresist on the surface of the silicon dioxide and the gold layer outside the etched groove;
step six: polishing and grinding the surface, which is not deposited with silicon dioxide, of the core particle mounting plate 1 after removing the redundant photoresist and the gold layer, mounting the ground core particle mounting plate 1 on a packaging base 2, and pouring waterproof glue on the edge of the mounted core particle mounting plate 1.
The LED core particles in the first step emit blue light, and the fluorescent layers are red fluorescent layers and yellow fluorescent layers.
And step two, arranging core particle template grooves on the upper end face of the reverse template, arranging at least one group of core particle grooves in the core particle template grooves, uniformly arranging the core particle grooves in the core particle template grooves, and matching the size and the position of the core particle grooves with the core particles.
And the resin in the third step is epoxy resin, and the end face of the core particle, which is far away from the electrode, is fixed on the epoxy resin.
And in the third step, the core particle mounting plate 1 is taken out, the handle and the core particle template are adhered by using the adhesive, and then the core particle mounting plate 1 is taken down by the handle.
In the fourth step, the thickness of the silicon dioxide is 1mm higher than that of the core particles, and the position of the core particles fixed on the core particle mounting plate 1 is polished to be level with the region where the core particles are not fixed by polishing the silicon dioxide film.
And fifthly, the photoresist on the surface of the silicon dioxide is positive photoresist, P, N poles of the LEDs on the core particle template are respectively connected in series through the exposed pattern, and the exposure light energy is 240 mj.
And in the fifth step, the silicon dioxide is etched in a mode that the surface of the silicon dioxide is bombarded by plasma until a motor of P, N poles of the LED core particles is exposed, the etching walkways are two groups of transverse lines and at least one group of vertical lines, the vertical lines are branch lines of the transverse lines, and the thickness of the gold layer evaporated in the fifth step is 1mm higher than the etching depth.
The horizontal lines are divided into two groups, the vertical lines connected with one group of horizontal lines are connected with the P poles of all the LED core particles, and the vertical lines connected with the other group of horizontal lines are connected with the N poles of all the LED core particles.
And the bottom of the packaging base 2 in the sixth step is provided with two electrode leads, at least one group of sawteeth is fixedly connected on the leads, the width of the leads is the same as the etching width in the fifth step, and the positions of the leads are matched with the positions of the transverse lines.
The packaging structure comprises a packaging base 2 and a core particle mounting plate 1.
Example 2
The method for packaging the high-power LED all-solid-state light source module comprises the following steps:
the method comprises the following steps: taking LED core particles, and uniformly coating a fluorescent layer on the surfaces of the LED core particles;
step two: the core particles coated with the fluorescent layer are placed in a core particle groove in the inverted template in an inverted mode;
step three: adding resin into the inverted template, and taking out the core particle mounting plate 1 formed by combining the resin and the core particles after the resin is cured;
step four: depositing a layer of silicon dioxide film on one surface of the core particle mounting plate 1 embedded with the core particles, and polishing the silicon dioxide film to be smooth and flat;
step five: sequentially carrying out photoresist coating, exposure and development on the surface of the polished silicon dioxide film, etching the developed silicon dioxide film, evaporating and plating a layer of gold on the etched silicon dioxide after etching, and removing the residual photoresist on the surface of the silicon dioxide and the gold layer outside the etched groove;
step six: and polishing and grinding the surface of the core particle mounting plate 1 without deposited silicon dioxide after removing the redundant photoresist and the gold layer, and mounting the polished core particle mounting plate 1 on a packaging base 2.
The LED core particles in the first step emit blue light, and the fluorescent layers are red fluorescent layers and yellow fluorescent layers.
And step two, arranging core particle template grooves on the upper end face of the reverse template, arranging at least one group of core particle grooves in the core particle template grooves, uniformly arranging the core particle grooves in the core particle template grooves, and matching the size and the position of the core particle grooves with the core particles.
And the resin in the third step is epoxy resin, and the end face of the core particle, which is far away from the electrode, is fixed on the epoxy resin.
And in the third step, the core particle mounting plate 1 is taken out, the handle and the core particle template are adhered by using the adhesive, and then the core particle mounting plate 1 is taken down by the handle.
In the fourth step, the thickness of the silicon dioxide is 1mm higher than that of the core particles, and the position of the core particles fixed on the core particle mounting plate 1 is polished to be level with the region where the core particles are not fixed by polishing the silicon dioxide film.
And fifthly, the photoresist on the surface of the silicon dioxide is positive photoresist, P, N poles of the LEDs on the core particle template are respectively connected in series through the exposed pattern, and the exposure light energy is 280 mj.
And in the fifth step, the silicon dioxide is etched in a mode that the surface of the silicon dioxide is bombarded by plasma until a motor of P, N poles of the LED core particles is exposed, the etching walkways are two groups of transverse lines and at least one group of vertical lines, the vertical lines are branch lines of the transverse lines, and the thickness of the gold layer evaporated in the fifth step is 1mm higher than the etching depth.
The horizontal lines are divided into two groups, the vertical lines connected with one group of horizontal lines are connected with the P poles of all the LED core particles, and the vertical lines connected with the other group of horizontal lines are connected with the N poles of all the LED core particles.
And the bottom of the packaging base 2 in the sixth step is provided with two electrode leads, at least one group of sawteeth is fixedly connected on the leads, the width of the leads is the same as the etching width in the fifth step, and the positions of the leads are matched with the positions of the transverse lines.
The packaging structure comprises a packaging base 2 and a core particle mounting plate 1.
Example 3
The method for packaging the high-power LED all-solid-state light source module comprises the following steps:
the method comprises the following steps: taking LED core particles, and uniformly coating a fluorescent layer on the surfaces of the LED core particles;
step two: the core particles coated with the fluorescent layer are placed in a core particle groove in the inverted template in an inverted mode;
step three: adding resin into the inverted template, and taking out the core particle mounting plate 1 formed by combining the resin and the core particles after the resin is cured;
step four: depositing a layer of silicon dioxide film on one surface of the core particle mounting plate 1 embedded with the core particles, and polishing the silicon dioxide film to be smooth and flat;
step five: sequentially carrying out photoresist coating, exposure and development on the surface of the polished silicon dioxide film, etching the developed silicon dioxide film, evaporating and plating a layer of gold on the etched silicon dioxide after etching, and removing the residual photoresist on the surface of the silicon dioxide and the gold layer outside the etched groove;
step six: and polishing and grinding the surface of the core particle mounting plate 1 without deposited silicon dioxide after removing the redundant photoresist and the gold layer, and mounting the polished core particle mounting plate 1 on a packaging base 2.
The LED core particles in the first step emit blue light, and the fluorescent layers are red fluorescent layers and yellow fluorescent layers.
And step two, arranging core particle template grooves on the upper end face of the reverse template, arranging at least one group of core particle grooves in the core particle template grooves, uniformly arranging the core particle grooves in the core particle template grooves, and matching the size and the position of the core particle grooves with the core particles.
And the resin in the third step is epoxy resin, and the end face of the core particle, which is far away from the electrode, is fixed on the epoxy resin.
And in the third step, the core particle mounting plate 1 is taken out, the handle and the core particle template are adhered by using the adhesive, and then the core particle mounting plate 1 is taken down by the handle.
In the fourth step, the thickness of the silicon dioxide is 1mm higher than that of the core particles, and the position of the core particles fixed on the core particle mounting plate 1 is polished to be level with the region where the core particles are not fixed by polishing the silicon dioxide film.
And fifthly, the photoresist on the surface of the silicon dioxide is positive photoresist, P, N poles of the LEDs on the core particle template are respectively connected in series through the exposed pattern, and the exposure light energy is 240 mj.
And in the fifth step, the silicon dioxide is etched in a mode that the surface of the silicon dioxide is bombarded by plasma until a motor of P, N poles of the LED core particles is exposed, the etching walkways are two groups of transverse lines and at least one group of vertical lines, the vertical lines are branch lines of the transverse lines, and the thickness of the gold layer evaporated in the fifth step is 1mm higher than the etching depth.
The horizontal lines are divided into two groups, the vertical lines connected with one group of horizontal lines are connected with the P poles of all the LED core particles, and the vertical lines connected with the other group of horizontal lines are connected with the N poles of all the LED core particles.
And the bottom of the packaging base 2 in the sixth step is provided with two electrode leads, at least one group of sawteeth is fixedly connected on the leads, the width of the leads is the same as the etching width in the fifth step, and the positions of the leads are matched with the positions of the transverse lines.
The packaging structure comprises a packaging base 2 and a core particle mounting plate 1.
The experimental comparative analysis results are as follows: the results of the voltage changes of the single core particles with time are shown in fig. 1, the results of the voltage changes of the single core particles with time are shown in fig. 2, and the results of the voltage changes of the single core particles with time are shown in fig. three.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (11)
1. A method for packaging a high-power LED all-solid-state light source module is characterized by comprising the following steps: comprises the following steps:
the method comprises the following steps: taking LED core particles, and uniformly coating a fluorescent layer on the surfaces of the LED core particles;
step two: the core particles coated with the fluorescent layer are placed in a core particle groove in the inverted template in an inverted mode;
step three: adding resin into the inverted template, and taking out the core particle mounting plate (1) formed by combining the resin and the core particles after the resin is cured;
step four: depositing a layer of silicon dioxide film on one surface of the core particle mounting plate (1) embedded with the core particles, and polishing the silicon dioxide film to be smooth and flat;
step five: sequentially carrying out photoresist coating, exposure and development on the surface of the polished silicon dioxide film, etching the developed silicon dioxide film, evaporating and plating a layer of gold on the etched silicon dioxide after etching, and removing the residual photoresist on the surface of the silicon dioxide and the gold layer outside the etched groove;
step six: polishing and grinding the surface, which is not deposited with silicon dioxide, of the core particle mounting plate (1) after removing the redundant photoresist and the gold layer, mounting the ground core particle mounting plate (1) on a packaging base (2), and pouring waterproof glue on the edge of the mounted core particle mounting plate (1).
2. The method for packaging a high-power LED all-solid-state light source module according to claim 1, wherein: the LED core particles in the first step emit blue light, and the fluorescent layers are red fluorescent layers and yellow fluorescent layers.
3. The method for packaging a high-power LED all-solid-state light source module according to claim 1, wherein: and step two, a core grain template groove is formed in the upper end face of the reverse template, at least one group of core grain grooves are formed in the core grain template groove, the core grain grooves are uniformly arranged in the core grain template groove, and the size and the position of each core grain groove are matched with those of the core grains.
4. The method for packaging a high-power LED all-solid-state light source module according to claim 1, wherein: and the resin in the third step is epoxy resin, and the end face of the core particle, which is far away from the electrode, is fixed on the epoxy resin.
5. The method for packaging a high-power LED all-solid-state light source module according to claim 1, wherein: and in the third step, the core particle mounting plate (1) is taken out, the handle and the core particle template are adhered by using the adhesive, and then the core particle mounting plate (1) is taken down by the handle.
6. The method for packaging a high-power LED all-solid-state light source module according to claim 1, wherein: in the fourth step, the thickness of the silicon dioxide is 1mm higher than that of the core particles, and the positions, where the core particles are fixed on the core particle mounting plate (1), are polished to be level with the regions, where the core particles are not fixed, of the silicon dioxide film.
7. The method for packaging a high-power LED all-solid-state light source module according to claim 1, wherein: and in the fifth step, the photoresist on the surface of the silicon dioxide is positive photoresist, P, N poles of the LEDs on the core particle template are respectively connected in series by the exposed pattern, and the exposure illumination energy is 240 mj.
8. The method for packaging a high-power LED all-solid-state light source module according to claim 1, wherein: and in the fifth step, the silicon dioxide is etched in a mode that the surface of the silicon dioxide is bombarded by plasma until a motor of P, N poles of the LED core particles is exposed, the etched walkways are two groups of transverse lines and at least one group of vertical lines, the vertical lines are branch lines of the transverse lines, and the thickness of the gold layer evaporated in the fifth step is 1mm higher than the etching depth.
9. The method for packaging a high-power LED all-solid-state light source module according to claim 8, wherein: the number of the transverse lines is two, the vertical lines connected with one transverse line are connected with the P poles of all the LED core particles, and the vertical lines connected with the other transverse line are connected with the N poles of all the LED core particles.
10. The method for packaging a high-power LED all-solid-state light source module according to claim 9, wherein: and the bottom of the packaging base (2) in the sixth step is provided with two electrode leads, at least one group of sawteeth is fixedly connected onto the leads, the width of the leads is the same as the etching width in the fifth step, and the positions of the leads are matched with the positions of the transverse lines.
11. The utility model provides a packaging structure of full solid-state light source module encapsulation of high-power LED which characterized in that: the packaging structure comprises a packaging base (2) and a core particle mounting plate (1).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110282773.3A CN113078251A (en) | 2021-03-16 | 2021-03-16 | High-power LED all-solid-state light source module packaging method and packaging structure thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110282773.3A CN113078251A (en) | 2021-03-16 | 2021-03-16 | High-power LED all-solid-state light source module packaging method and packaging structure thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113078251A true CN113078251A (en) | 2021-07-06 |
Family
ID=76612790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110282773.3A Pending CN113078251A (en) | 2021-03-16 | 2021-03-16 | High-power LED all-solid-state light source module packaging method and packaging structure thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113078251A (en) |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101393950A (en) * | 2007-09-17 | 2009-03-25 | 兆立光电有限公司 | Flip encapsulation manufacturing method for LED |
US20120112220A1 (en) * | 2010-11-08 | 2012-05-10 | Bridgelux, Inc. | LED-Based Light Source Utilizing Asymmetric Conductors |
CN102842656A (en) * | 2011-06-24 | 2012-12-26 | 深圳市九洲光电科技有限公司 | High-power white-light LED fluorescent powder coating method |
CN104393154A (en) * | 2014-12-09 | 2015-03-04 | 武汉大学 | Wafer level packaging method for LED (Light-Emitting Diode) chip level white light source |
CN104409616A (en) * | 2014-11-14 | 2015-03-11 | 易美芯光(北京)科技有限公司 | Flip chip LED integrated light source structure and preparation method thereof |
US20160035945A1 (en) * | 2014-07-29 | 2016-02-04 | Apt Electronics Ltd. | White led chip and method of manufacture |
WO2016150069A1 (en) * | 2015-03-24 | 2016-09-29 | 湘能华磊光电股份有限公司 | Chip scale packaging method and structure for light-emitting device |
CN107565005A (en) * | 2017-08-18 | 2018-01-09 | 上海应用技术大学 | A kind of Novel high-power LED light source module encapsulation construction |
CN109390240A (en) * | 2017-08-04 | 2019-02-26 | 琳得科株式会社 | The manufacturing method and bonding laminated body of semiconductor device |
CN109545937A (en) * | 2018-12-29 | 2019-03-29 | 佛山市国星半导体技术有限公司 | A kind of high brightness side plating flip LED chips and preparation method thereof |
CN111446158A (en) * | 2020-03-05 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | Metal deposition process after wafer back cutting |
WO2020204456A1 (en) * | 2019-04-01 | 2020-10-08 | (주)라이타이저 | Light emitting diode chip-scale package and method for manufacturing same |
WO2021010079A1 (en) * | 2019-07-18 | 2021-01-21 | 株式会社ブイ・テクノロジー | Electronic component mounting structure, electronic component mounting method, and led display panel |
-
2021
- 2021-03-16 CN CN202110282773.3A patent/CN113078251A/en active Pending
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101393950A (en) * | 2007-09-17 | 2009-03-25 | 兆立光电有限公司 | Flip encapsulation manufacturing method for LED |
US9478719B2 (en) * | 2010-11-08 | 2016-10-25 | Bridgelux, Inc. | LED-based light source utilizing asymmetric conductors |
US20120112220A1 (en) * | 2010-11-08 | 2012-05-10 | Bridgelux, Inc. | LED-Based Light Source Utilizing Asymmetric Conductors |
CN102842656A (en) * | 2011-06-24 | 2012-12-26 | 深圳市九洲光电科技有限公司 | High-power white-light LED fluorescent powder coating method |
US20160035945A1 (en) * | 2014-07-29 | 2016-02-04 | Apt Electronics Ltd. | White led chip and method of manufacture |
CN104409616A (en) * | 2014-11-14 | 2015-03-11 | 易美芯光(北京)科技有限公司 | Flip chip LED integrated light source structure and preparation method thereof |
CN104393154A (en) * | 2014-12-09 | 2015-03-04 | 武汉大学 | Wafer level packaging method for LED (Light-Emitting Diode) chip level white light source |
WO2016150069A1 (en) * | 2015-03-24 | 2016-09-29 | 湘能华磊光电股份有限公司 | Chip scale packaging method and structure for light-emitting device |
CN109390240A (en) * | 2017-08-04 | 2019-02-26 | 琳得科株式会社 | The manufacturing method and bonding laminated body of semiconductor device |
CN107565005A (en) * | 2017-08-18 | 2018-01-09 | 上海应用技术大学 | A kind of Novel high-power LED light source module encapsulation construction |
CN109545937A (en) * | 2018-12-29 | 2019-03-29 | 佛山市国星半导体技术有限公司 | A kind of high brightness side plating flip LED chips and preparation method thereof |
WO2020204456A1 (en) * | 2019-04-01 | 2020-10-08 | (주)라이타이저 | Light emitting diode chip-scale package and method for manufacturing same |
WO2021010079A1 (en) * | 2019-07-18 | 2021-01-21 | 株式会社ブイ・テクノロジー | Electronic component mounting structure, electronic component mounting method, and led display panel |
CN111446158A (en) * | 2020-03-05 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | Metal deposition process after wafer back cutting |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9431588B2 (en) | Semiconductor device and method for manufacturing the same | |
CN101728470B (en) | Light-emitting diode device and method for fabricating the same | |
EP3025379B1 (en) | Light-emitting dies incorporating wavelength-conversion materials and related methods | |
US6909234B2 (en) | Package structure of a composite LED | |
US7928458B2 (en) | Light-emitting diode device and method for fabricating the same | |
JP2015506591A (en) | Light emitting die incorporating wavelength converting material and associated method | |
US20110207253A1 (en) | Flip-chip led module fabrication method | |
CN107342353A (en) | One kind focuses on ultraviolet LED encapsulating structure and preparation method thereof | |
CN104979447A (en) | Flip LED packaging structure and manufacturing method | |
CN102881779A (en) | Method for manufacturing light emitting diode packaging structure | |
CN101859759A (en) | White LED light source package | |
CN100336234C (en) | Bare crystal LED | |
CN101114684A (en) | SMD light-emitting diode packaging structure | |
CN204885205U (en) | Flip -chip LED packaging structure | |
CN113078251A (en) | High-power LED all-solid-state light source module packaging method and packaging structure thereof | |
JP2011091204A (en) | Method for manufacturing led light source device | |
CN203103350U (en) | White light LED device with fluorescent powder layer | |
CN115241343A (en) | LED packaging device, preparation method and display device thereof | |
CN104518055B (en) | Light emitting diode assembly and method of manufacture | |
CN102867901A (en) | White light LED (light-emitting diode) device with fluorescent powder layer and manufacturing method thereof | |
JP2011142255A (en) | Method of manufacturing led light source | |
CN217239458U (en) | Double-color luminescent device | |
US11296269B2 (en) | Light emitting diode packaging structure and method for manufacturing the same | |
JP5242661B2 (en) | Method for manufacturing light emitting device | |
CN115763460A (en) | RGB display device and integrated packaging method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210706 |