CN113070810A - Wafer polishing pad - Google Patents
Wafer polishing pad Download PDFInfo
- Publication number
- CN113070810A CN113070810A CN202010005399.8A CN202010005399A CN113070810A CN 113070810 A CN113070810 A CN 113070810A CN 202010005399 A CN202010005399 A CN 202010005399A CN 113070810 A CN113070810 A CN 113070810A
- Authority
- CN
- China
- Prior art keywords
- sheet
- polishing pad
- grinding
- wafer
- pressure regulating
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a wafer polishing pad for Chemical Mechanical Polishing (CMP) to polish wafers. The wafer polishing pad comprises a grinding sheet and a pressure adjusting sheet arranged on the back surface of the grinding sheet; the front surface of the grinding sheet is a grinding surface, the pressure regulating sheet is provided with a combination surface combined on the back surface of the grinding sheet, the area of the combination surface is smaller than the area of the grinding surface, and the hardness of the pressure regulating sheet is different from that of the grinding sheet, wherein the hardness is different and means that the pressure regulating sheet can present different physical properties when being pressed, for example, the pressure regulating sheet can present different compression ratios when being pressed under the same shape and volume, so that different pressure feedback effects can be presented in each area on the grinding surface, and the wafer can obtain better and more uniform polishing effect.
Description
Technical Field
The present invention relates to Chemical Mechanical Polishing (CMP) technology, and more particularly, to a wafer polishing pad.
Background
Chemical mechanical polishing is a technical means for carrying out global planarization on the surface of a wafer, and mainly comprises the steps of fixing the wafer by a polishing head and pressing and holding the wafer on a polishing pad larger than the wafer. The polishing head may spin the wafer or further swing the wafer while the polishing pad is also rotating. Slurry containing chemical additives (also called polishing solution or grinding solution) is sprayed on the polishing pad, and the polishing pad is usually provided with a plurality of grooves to control the flow field of the slurry, so as to trim and polish more materials on the surface of the wafer, so that the wafer can reach the optimal flat state.
However, the conventional polishing pad is still prone to have a problem of non-uniform wafer removal efficiency (polishing rate). The main reason is that the polishing pad is rotated, and the central portion of the polishing pad and the peripheral portion of the polishing pad exhibit different displacement speeds at the same time and at the same rotation angle, and the wafer polishing is affected by a slight pressure difference between the center and the periphery of the polishing pad due to mechanical factors, so that the central portion of the polishing pad and the peripheral portion of the polishing pad have different wafer removal efficiencies. In addition to the yield of wafer production, the wear of the polishing pad is not uniform, which results in the problem that the outer ring area of the polishing pad is more worn than the inner ring area of the polishing pad, and the polishing pad must be replaced earlier. In view of this, the prior art often uses the groove design on the surface of the polishing pad to match the flow field state of the slurry supply to improve the problem of non-uniform wafer removal efficiency, but the improvement effect is limited.
Disclosure of Invention
In view of the problems mentioned in the prior art, the present invention is directed to research and study on various reasons affecting the wafer removal efficiency of different regions of a polishing pad, wherein the important parameter affecting the wafer removal efficiency of each region of the polishing pad is the down force, which is an important parameter affecting the wafer removal efficiency, in addition to the relative movement speed between the polishing medium, the wafer and the polishing pad; more importantly, when the same down force is applied to polishing pads of different hardness and thickness, the wafer removal efficiency will be different.
The primary objective of the present invention is to provide a technical means to adjust the hardness and softness of each region of the same wafer polishing pad, so as to adjust the wafer removal efficiency of different regions of the same wafer polishing pad.
To achieve the above object, the present invention provides a wafer polishing pad, comprising:
a polishing sheet, the front surface of which is a polishing surface; and
the pressure regulating sheet is provided with a combining surface, the combining surface is combined on the back surface of the grinding sheet, the area of the combining surface is smaller than that of the grinding surface, and the hardness of the pressure regulating sheet is different from that of the grinding sheet.
Therefore, the grinding surface corresponds to the area of the back surface of the grinding sheet provided with the pressure regulating sheet, and the removal efficiency of the wafer can be changed differently. Wherein, the back of the grinding sheet is provided with a first concave part for accommodating the pressure regulating sheet.
The wafer polishing pad, wherein: the back of the grinding sheet is provided with a first concave part for accommodating the pressure regulating sheet.
The wafer polishing pad, wherein: the polishing device also comprises a bottom sealing sheet which is jointed on the back surface of the polishing sheet and shields the pressure regulating sheet at the same time.
The wafer polishing pad, wherein: the polishing device also comprises a buffer sheet which is connected with the back of the polishing sheet and shields the pressure adjusting sheet at the same time, and the hardness of the buffer sheet is different from that of the polishing sheet.
The wafer polishing pad, wherein: the back of the grinding sheet is provided with a first concave part for accommodating the pressure regulating sheet.
The wafer polishing pad, wherein: the buffer sheet is provided with a second concave part for accommodating the pressure regulating sheet.
The wafer polishing pad, wherein: the back of the grinding sheet is provided with a first concave part for accommodating the pressure regulating sheet, the buffer sheet is provided with a second concave part for accommodating the second pressure regulating sheet, the second pressure regulating sheet is provided with a second bonding surface facing the direction of the grinding sheet, and the area of the second bonding surface is smaller than that of the grinding surface.
The wafer polishing pad, wherein: the pressure regulating sheet is in a ring shape.
The wafer polishing pad, wherein: the pressure regulating sheet is circular.
The wafer polishing pad, wherein: the grinding surface is provided with a plurality of grooves.
The wafer polishing pad, wherein: the back surface of the wafer polishing pad is flat.
Compared with the prior art, the technical means that the pressure adjusting sheet is arranged on the back surface of the grinding sheet, and the area of the combined surface is smaller than that of the grinding surface can enable the back surface of the grinding sheet to present two different areas with the pressure adjusting sheet and without the pressure adjusting sheet, and the hardness of the pressure adjusting sheet is different from that of the grinding sheet, so that the two different areas present different pressure adjusting effects, and further the wafer removal efficiency of each area of the polishing pad can be adjusted; the pressure adjusting sheet can be set into different shapes according to different adjusting requirements, and the hardness difference between the pressure adjusting sheet and the grinding sheet can be adjusted according to different using requirements, so that the wafer polishing pad can present an optimal structural configuration state according to various using requirements.
The invention has the effect of adjusting the removal efficiency of the local and regional wafers, is different from the common grinding pad which is only of a single-layer structure with uniform hardness or is only provided with a multi-layer buffer structure, and can ensure that the front surface (namely the grinding surface) of the grinding sheet is made of uniform material when the removal efficiency of the local and regional wafers is adjusted so as to ensure the stability of the grinding process.
Drawings
Fig. 1 is a perspective assembly view showing a first embodiment of the present invention.
Fig. 2 is a perspective sectional view showing a first embodiment of the present invention.
Fig. 3 shows a cross-sectional view of a first embodiment of the invention.
Fig. 4 is a schematic structural diagram illustrating a first embodiment of the present invention.
Fig. 5 is a schematic diagram illustrating a structure of a second embodiment of the present invention.
Fig. 6 is a schematic diagram illustrating a structure of a third embodiment of the present invention.
Fig. 7 is a perspective sectional view showing a fourth embodiment of the present invention.
Fig. 8 is a schematic diagram illustrating a structure of a fourth embodiment of the present invention.
Fig. 9 is a schematic diagram illustrating a fifth embodiment of the present invention.
Fig. 10 is a schematic diagram illustrating a structure of a sixth embodiment of the present invention.
Fig. 11 is a schematic diagram illustrating a structure of a seventh embodiment of the present invention.
Description of reference numerals: 10-a grinding plate; 11-a ground surface; 12-a first recess; 13-a trench; 20-pressure regulating sheet; 21-a bonding surface; 30-bottom sealing sheet; 40-a buffer sheet; 41-a second recess; 50-a second pressure regulating tab; 51-second bonding surface.
Detailed Description
Referring to fig. 1 to 4, which are a perspective assembly view, an exploded perspective view, a cross-sectional view and a schematic structural illustration of a first embodiment of the present invention, a wafer polishing pad according to the first embodiment includes a polishing pad 10 and a pressure adjustment plate 20.
The polishing sheet 10 is substantially in the shape of a circular sheet, the front surface of the polishing sheet 10 is a polishing surface 11, the back surface of the polishing sheet 10 is provided with a first concave portion 12, and the surface of the polishing surface 11 is provided with a plurality of grooves 13.
The pressure regulating plate 20 is substantially in the shape of a ring, and is accommodated in the first recess 12. The pressure-regulating blade 20 has a bonding surface 21 bonded to the back surface of the polishing pad 10, and the outer diameter of the pressure-regulating blade 20 of this first embodiment is exactly the same as the outer diameter of the polishing pad 10.
The area of the bonding surface 21 is smaller than that of the abrasive surface 11, and the hardness of the pressure-regulating sheet 20 is different from that of the abrasive sheet 10. In practice, the hardness of the pressure regulating sheet 20 may be less than that of the grinding sheet 10, so that the pressure regulating sheet 20 has a relatively softer hardness than that of the grinding sheet 10; alternatively, the hardness of the pressure adjustment sheet 20 may be greater than the hardness of the polishing sheet 10, such that the pressure adjustment sheet 20 has a relatively harder hardness than the polishing sheet 10, and thus the polishing pad has different pressure feedback effects in the regions with the pressure adjustment sheet 20 and the regions without the pressure adjustment sheet 20, so as to adjust the wafer removal efficiency in each region.
Since the wafer polishing pad is a flat body in a wafer shape, the schematic illustration of the structure in this embodiment and other embodiments is merely an auxiliary schematic illustration of the relative position, and the relative width, relative thickness and ratio shown in the drawings are only for understanding and reference for illustration, and will be described in the foregoing. The cross-sectional view of FIG. 3 only reveals the approximate thickness ratio of the wafer polishing pad, and therefore, the structural illustration of FIG. 4 is further provided to illustrate the relative positions of the polishing pad 10, the first concave portion 12, and the pressure-regulating blade 20, and further to illustrate the relative positions of the polishing surface 11, the groove 13, and the bonding surface 21.
FIG. 5 is a schematic diagram illustrating a structure of a second embodiment of the present invention; this embodiment is substantially the same as the first embodiment in technical means, except that the second embodiment shows the pressure-regulating blade 20 having an outer diameter smaller than that of the polishing blade 10.
Please refer to fig. 6, which is a schematic diagram illustrating a structure of a third embodiment of the present invention; this embodiment is substantially the same as the first embodiment in technical means, except that the pressure-regulating blade 20 of the second embodiment is located at the center position and has a disk-like or other shape, rather than a ring-like shape, and has an outer diameter smaller than the outer diameter of the polishing pad 10 and closer to the center position. As can be understood from the above description of the first to third embodiments, the range, size and shape of the pressure-regulating plate 20 covering the back surface of the polishing pad 10 can be adjusted according to the use requirement.
Please refer to fig. 7 and 8, which are an exploded perspective view and an explanatory diagram illustrating a fourth embodiment of the present invention; this embodiment is substantially the same as the first embodiment, except that the fourth embodiment further comprises a bottom cover sheet 30, the bottom cover sheet 30 is bonded to the back surface of the polishing sheet 10 and simultaneously shields the pressure-regulating sheet 20 to protect and shield the pressure-regulating sheet 20 and the originally exposed portion of the back surface of the polishing sheet 10.
Please refer to fig. 9, which is a schematic diagram illustrating a structure of a fifth embodiment of the present invention; this embodiment is substantially the same as the first embodiment in technical means, and the difference is that the fifth embodiment further comprises a buffer sheet 40, the buffer sheet 40 is bonded to the back surface of the polishing sheet 10 and simultaneously shields the pressure-regulating sheet 20 to protect and shield the pressure-regulating sheet 20 and the originally exposed portion of the back surface of the polishing sheet 10. The buffer sheet 40 is different from the back cover sheet 30 of the fourth embodiment, the buffer sheet 40 further has a function of adjusting and dispersing pressure, and the hardness of the buffer sheet 40 is different from that of the polishing sheet 10. In practice, the hardness of the buffer sheet 40 may be less than that of the polishing sheet 10, so that the pressure adjustment sheet 20 has a relatively soft hardness compared to the polishing sheet 10.
Please refer to fig. 10, which is a schematic diagram illustrating a structure of a sixth embodiment of the present invention; this embodiment is substantially the same as the fifth embodiment in technical means, except that the buffer sheet 40 is provided with a second concave portion 41 for accommodating the pressure-regulating sheet 20, and the back surface of the polishing sheet 10 is not provided with the first concave portion 12 as disclosed in the above-mentioned embodiments.
Please refer to fig. 11, which is a schematic diagram illustrating a structure of a seventh embodiment of the present invention; the technical means adopted in this embodiment is substantially the same as that adopted in the fifth and sixth embodiments, and the difference is that
The back of the polishing sheet 10 is provided with a first concave portion 12 for accommodating the pressure adjustment sheet 20, the buffer sheet 40 is provided with a second concave portion 41 for accommodating the second pressure adjustment sheet 50, the second pressure adjustment sheet 50 is provided with a second bonding surface 51 facing the direction of the polishing sheet 10, and the area of the second bonding surface 51 is smaller than that of the polishing surface 11; the second bonding surface 51 may be directly or indirectly bonded to the polishing sheet 10.
In practice, the polishing sheet 10, the pressure regulating sheet 20, the back cover sheet 30 or the buffer sheet 40 mentioned in the above embodiments may be made of PU materials with different hardness, wherein the back cover sheet 30 or the buffer sheet 40 may be made of other materials different from PU. The pressure adjusting sheets 20 and the second pressure adjusting sheets 50 may be implemented in a ring shape, a circular shape or other shapes, and the number of the pressure adjusting sheets 20 and the second pressure adjusting sheets 50 may also be a plurality of sheets, so that the soft and hard regions of the wafer polishing pad are distributed in a ring shape, a circular shape or other shapes; the polishing surface 11 is provided with a plurality of grooves 13 for the slurry added in the polishing operation to obtain a good flow field, and the back surface of the whole wafer polishing pad is flat, so that the wafer polishing pad can be applied to various polishing machines.
The hardness of the invention is different, which means that the material can present different physical properties under the same pressure, for example, the material can present different compression ratios under the same shape and volume; even the same type of material (e.g., PU) may exhibit different hardness with different compressibility due to different foaming conditions, implementation density, material structure, or material composition.
The foregoing description is intended to be illustrative rather than limiting, and it will be appreciated by those skilled in the art that many modifications, variations or equivalents may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (11)
1. A wafer polishing pad, comprising:
a polishing sheet, the front surface of which is a polishing surface; and
the pressure regulating sheet is provided with a combining surface, the combining surface is combined on the back surface of the grinding sheet, the area of the combining surface is smaller than that of the grinding surface, and the hardness of the pressure regulating sheet is different from that of the grinding sheet.
2. The wafer polishing pad of claim 1, wherein: the back of the grinding sheet is provided with a first concave part for accommodating the pressure regulating sheet.
3. The wafer polishing pad of claim 1, wherein: the polishing device also comprises a bottom sealing sheet which is jointed on the back surface of the polishing sheet and shields the pressure regulating sheet at the same time.
4. The wafer polishing pad of claim 1, wherein: the polishing device also comprises a buffer sheet which is connected with the back of the polishing sheet and shields the pressure adjusting sheet at the same time, and the hardness of the buffer sheet is different from that of the polishing sheet.
5. The wafer polishing pad of claim 4, wherein: the back of the grinding sheet is provided with a first concave part for accommodating the pressure regulating sheet.
6. The wafer polishing pad of claim 4, wherein: the buffer sheet is provided with a second concave part for accommodating the pressure regulating sheet.
7. The wafer polishing pad of claim 4, wherein: the back of the grinding sheet is provided with a first concave part for accommodating the pressure regulating sheet, the buffer sheet is provided with a second concave part for accommodating the second pressure regulating sheet, the second pressure regulating sheet is provided with a second bonding surface facing the direction of the grinding sheet, and the area of the second bonding surface is smaller than that of the grinding surface.
8. The wafer polishing pad of any one of claims 1-7, wherein: the pressure regulating sheet is in a ring shape.
9. The wafer polishing pad of any one of claims 1-7, wherein: the pressure regulating sheet is circular.
10. The wafer polishing pad of any one of claims 1-7, wherein: the grinding surface is provided with a plurality of grooves.
11. The wafer polishing pad of any one of claims 1-7, wherein: the back surface of the wafer polishing pad is flat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010005399.8A CN113070810A (en) | 2020-01-03 | 2020-01-03 | Wafer polishing pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010005399.8A CN113070810A (en) | 2020-01-03 | 2020-01-03 | Wafer polishing pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113070810A true CN113070810A (en) | 2021-07-06 |
Family
ID=76608619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010005399.8A Pending CN113070810A (en) | 2020-01-03 | 2020-01-03 | Wafer polishing pad |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113070810A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113714928A (en) * | 2021-08-23 | 2021-11-30 | 武汉华星光电半导体显示技术有限公司 | Grinding disk and substrate cleaning device |
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| US20020025769A1 (en) * | 2000-08-23 | 2002-02-28 | Oliver Michael R. | Substrate supporting carrier pad |
| KR20050013436A (en) * | 2003-07-28 | 2005-02-04 | 삼성전자주식회사 | Chemical mechanical polishing apparatus having insert pad for forming local step |
| KR20050050872A (en) * | 2003-11-26 | 2005-06-01 | 동부아남반도체 주식회사 | Chemical mechanical polishing apparatus |
| CN1805823A (en) * | 2003-04-28 | 2006-07-19 | 微米技术有限公司 | Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
| CN101134301A (en) * | 2000-12-01 | 2008-03-05 | 东洋橡膠工业株式会社 | Polishing pad, method of manufacturing the polishing pad, and cushion layer for polishing pad |
| JP2010165765A (en) * | 2009-01-14 | 2010-07-29 | Panasonic Corp | Method of manufacturing semiconductor device |
| JP2011200951A (en) * | 2010-03-25 | 2011-10-13 | Fujibo Holdings Inc | Polishing pad |
| CN104285281A (en) * | 2012-04-25 | 2015-01-14 | 应用材料公司 | Printed chemical mechanical polishing pad |
| US20150056900A1 (en) * | 2011-05-23 | 2015-02-26 | Rajeev Bajaj | Polishing pad with homogeneous body having discrete protrusions thereon |
| US20150343595A1 (en) * | 2010-07-08 | 2015-12-03 | William C. Allison | Soft polishing pad for polishing a semiconductor substrate |
| JP2017000752A (en) * | 2015-06-08 | 2017-01-05 | セーレン株式会社 | Polishing cloth for game media and polishing device for game media |
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2020
- 2020-01-03 CN CN202010005399.8A patent/CN113070810A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001025963A (en) * | 1999-06-24 | 2001-01-30 | Samsung Electronics Co Ltd | Retaining ring for chemical mechanical polishing and its usage |
| US20020025769A1 (en) * | 2000-08-23 | 2002-02-28 | Oliver Michael R. | Substrate supporting carrier pad |
| CN101134301A (en) * | 2000-12-01 | 2008-03-05 | 东洋橡膠工业株式会社 | Polishing pad, method of manufacturing the polishing pad, and cushion layer for polishing pad |
| CN1805823A (en) * | 2003-04-28 | 2006-07-19 | 微米技术有限公司 | Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
| KR20050013436A (en) * | 2003-07-28 | 2005-02-04 | 삼성전자주식회사 | Chemical mechanical polishing apparatus having insert pad for forming local step |
| KR20050050872A (en) * | 2003-11-26 | 2005-06-01 | 동부아남반도체 주식회사 | Chemical mechanical polishing apparatus |
| JP2010165765A (en) * | 2009-01-14 | 2010-07-29 | Panasonic Corp | Method of manufacturing semiconductor device |
| JP2011200951A (en) * | 2010-03-25 | 2011-10-13 | Fujibo Holdings Inc | Polishing pad |
| US20150343595A1 (en) * | 2010-07-08 | 2015-12-03 | William C. Allison | Soft polishing pad for polishing a semiconductor substrate |
| US20150056900A1 (en) * | 2011-05-23 | 2015-02-26 | Rajeev Bajaj | Polishing pad with homogeneous body having discrete protrusions thereon |
| CN104285281A (en) * | 2012-04-25 | 2015-01-14 | 应用材料公司 | Printed chemical mechanical polishing pad |
| JP2017000752A (en) * | 2015-06-08 | 2017-01-05 | セーレン株式会社 | Polishing cloth for game media and polishing device for game media |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113714928A (en) * | 2021-08-23 | 2021-11-30 | 武汉华星光电半导体显示技术有限公司 | Grinding disk and substrate cleaning device |
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Application publication date: 20210706 |