CN113067245B - Terbium activated borate crystal and 544nm or 586nm band laser - Google Patents
Terbium activated borate crystal and 544nm or 586nm band laser Download PDFInfo
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Abstract
The invention provides a terbium activated borate crystal and a 544nm or 586nm waveband laser, wherein the chemical formula of the crystal is Ca3R1‑xTbx(MO)3(BO3)4Wherein R is selected from at least one of Y, Gd and Lu, M is selected from at least one of Al and Ga, and x ranges from 0.50 to 1.00; the terbium-activated borate crystal can be used as a laser gain medium to obtain high-efficiency solid laser with a wave band of 544nm or a wave band of 586nm or 590 nm.
Description
Technical Field
The invention relates to the technical field of solid laser materials and devices, in particular to a terbium-activated borate crystal and a 544nm or 586nm band laser.
Background
The semiconductor Laser (LD) pump solid laser has the advantages of high output beam quality, long transmission distance, stable performance and the like, and the device is firm, durable, compact and reliable and is suitable for the fields of fields, industry, military and the like with severe working environment and longer target distance. The visible wave band solid laser can be widely applied to the fields of high-density optical data storage, laser printing, color display, biomedicine, submarine communication and the like.
Pr3+The ion is the most mature active ion in the development of the visible wave band at present, has the advantages of high laser output power and efficiency and the like, and has reports of laser output in blue, green, orange, red and deep red wave bands. But Pr3+Can not directly emit yellow light under the pumping of semiconductor laser, and the laser in the wave band is in a laser sodium waveguideThe method has important application prospect in the fields of star, biomedicine, display, spectroscopy and the like. In contrast, Dy3+Yellow light wave band solid laser output can be realized, but Dy3+The ground state absorption transition in most of crystals is weak, and the absorption section is generally only 10-21cm2Magnitude. Due to the complex energy level structure and the serious fluorescence concentration quenching effect, the effective absorption pumping can not be realized by high-concentration doping. Currently, LiLuF is used4And YAG and the like as matrix materials, the highest output power of the obtained yellow laser is only 150mW at most, the oblique efficiency is about 13 percent, and the distance from the practical application is quite large.
Tb3+In5D4To7FJ(J-0, 1 … 6) multiple state transitions with multiple wavelengths of fluorescence emission, especially5D4→7F4The fluorescence wavelength of the transition is exactly in the 580nm yellow band. Currently, 2 omega-OPSL in the 485nm band is used as a pump source, only at Tb3+Laser output is realized in the doped fluoride crystal, the growth condition of the fluoride crystal is harsh, water and oxygen insulation and high vacuum conditions are required, and the growth cost is high.
Based on the current Tb3+The doped fluoride crystal has the defects of harsh growth conditions and high growth cost when being used as a laser gain medium, and needs to be improved.
Disclosure of Invention
In view of the above, the present invention provides a terbium-activated borate crystal and a 544nm or 586nm band laser, so as to solve or partially solve the technical problems in the prior art.
In a first aspect, the present invention provides a terbium-activated borate crystal having the chemical formula Ca3R1-xTbx(MO)3(BO3)4Wherein R is selected from at least one of Y, Gd and Lu, M is selected from at least one of Al and Ga, and x ranges from 0.50 to 1.00.
On the basis of the technical scheme, preferably, the terbium-activated borate crystal belongs to a hexagonal crystal system, and the space group is P63/m.
In a second aspect, the present invention further provides a method for preparing a terbium-activated borate crystal, wherein the crystal is prepared by a czochralski method, and the method for preparing the crystal comprises the following steps:
s1, mixing and grinding the compound containing Ca element, the compound containing R element, the compound containing Tb element, the compound containing M element and the compound containing B element;
s2, sintering the ground compound to obtain a polycrystalline material;
and S3, growing the obtained polycrystalline material.
On the basis of the above technical solution, it is preferable that in the method for preparing a terbium-activated borate crystal, in step S1, the Ca element-containing compound is selected from Ca carbonates, the R element-containing compound is selected from R oxides, the Tb element-containing compound is selected from Tb oxides, the M element-containing compound is selected from M oxides, and the B element-containing compound is selected from oxo acids of B;
in the step S2, the sintering temperature is 1000-1100 ℃;
and S3, growing in a single crystal furnace at 1150-1350 deg.c and pulling speed of 0.6-1.5 mm/hr and crystal growing speed of 6-20 rpm.
On the basis of the above technical solution, preferably, in the method for preparing a terbium-activated borate crystal, S1 further includes adding a compound containing B element again to the mixture obtained in step S1, grinding the mixture, and then performing step S2, where the amount of the substance added again to the compound containing B element is 1 to 8% of the amount of the substance added to the compound containing B element in step S1;
when M is selected from Ga, or a combination of Ga and Al, S1 further includes adding a Ga-containing compound to the mixture obtained in step S1 again, grinding the mixture, and performing step S2, wherein the amount of the Ga-containing compound added again is 0.5 to 2.5% of the amount of the Ga-containing compound added in step S1.
In a third aspect, the invention also provides the application of the terbium-activated borate crystal as a laser gain medium of a laser.
On the basis of the above technical solution, preferably, the use is characterized in that the laser is a 544nm band or 586nm band laser.
In a fourth aspect, the present invention further provides a 544nm band or 586nm band laser, including a pump light source, an optical coupling module, a focusing lens module, an input mirror, a laser gain medium, and an output coupling mirror;
the pumping light source comprises a frequency doubling optical pump semiconductor laser with the output wavelength range of 450-500 nm;
the optical coupling module is positioned between the pumping light source and the focusing lens module;
the laser gain medium is the terbium-activated borate crystal;
the laser gain medium is interposed between the input mirror and the output coupling mirror.
On the basis of the above technical solution, preferably, the input mirror and the output coupling mirror of the 544nm band or 586nm band laser are respectively plated on the input surface and the output surface of the laser gain medium.
On the basis of the technical scheme, preferably, the 544nm band or 586nm band laser further comprises a Q-switching or mode-locking element with a 544nm band or 586nm band;
the Q-switching or mode-locking element with the 544nm waveband or the 586nm waveband is arranged between the laser gain medium and the output coupling mirror, or the Q-switching and mode-locking element is arranged between the laser gain medium and the output coupling mirror;
the Q-switching element is a passive Q-switching sheet which is Cr4+YAG crystal, Cr4+GSGG crystal or acousto-optic Q-switching module;
the laser also comprises a wavelength tuning element with a 544nm band or a 586nm band;
the wavelength tuning element is between the laser gain medium and the output coupling mirror;
the wavelength tuning element is selected from one of a birefringent filter, a grating or a prism.
Compared with the prior art, the terbium-activated borate crystal has the following beneficial effects:
(1) the chemical formula of the terbium-activated borate crystal is Ca3R1-xTbx(MO)3(BO3)4R is selected from at least one of Y, Gd and Lu, M is selected from at least one of Al and Ga, and the range of x is 0.50-1.00, and the high-efficiency solid laser with a wave band of 544nm or a wave band of 586nm or 590nm can be obtained by adopting the crystal as a laser gain medium;
(2) the method for preparing the terbium-activated borate crystal adopts a pulling method to grow terbium-ion-doped Ca under the relatively loose growth condition3R1-xTbx(MO)3(BO3)4Crystal, compared with the conventional Tb3+The doped fluoride crystal has simple process and can reduce the growth cost;
(3) tb in terbium-activated borate crystal of the present invention3+Effective doping site concentration of ions is about 38X 1020Per cm3The quenching effect of fluorescence concentration is weak, and most of Tb in the laser crystal3+The effective doping lattice concentration of the ions is about (15-20) x 1020Per cm3Under the condition that the absorption cross sections of 485nm wave bands are close, higher doping concentration can obtain larger absorption coefficient, and efficient absorption pumping is facilitated to realize the operation of solid laser of 544nm wave bands or 586nm wave bands.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 shows Ca prepared in example 1 of the present invention3Gd0.2Tb0.8(AlO)3(BO3)4An XRD pattern of the crystal;
FIG. 2 is Tb3+The fluorescence emission spectrum of the crystal sample of the ion under different doping concentrations at room temperature under the excitation of 482 nm;
FIG. 3 is a schematic diagram of an optical path structure of a 544nm band or 586nm band laser according to an embodiment of the present invention.
Detailed Description
In the following, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The invention provides a terbium-activated borate crystal, and the chemical formula of the crystal is Ca3R1-xTbx(MO)3(BO3)4Wherein R is at least one selected from Y, Gd and Lu, M is at least one selected from Al and Ga, and x is 0.50-1.00.
In some embodiments the borate crystals belong to the hexagonal system with the space group being P63/m.
Based on the same inventive concept, the invention also provides a preparation method of the terbium-activated borate crystal, the borate crystal is prepared by adopting a pulling method, and specifically, the preparation method of the borate crystal comprises the following steps:
s1, mixing and grinding a compound containing Ca element, a compound containing R element, a compound containing Tb element, a compound containing M element and a compound containing B element;
s2, sintering the ground compound to obtain a polycrystalline material;
and S3, growing the obtained polycrystalline material.
In some embodiments, the Ca element-containing compound in step S1 is selected from carbonates of Ca, the R element-containing compound is selected from oxides of R, the Tb element-containing compound is selected from oxides of Tb, the M element-containing compound is selected from oxides of M, and the B element-containing compound is selected from oxyacids of B;
in the step S2, the sintering temperature is 1000-1100 ℃;
and step S3, growing in a single crystal pulling furnace, wherein the growth temperature is 1150-1350 ℃, the pulling speed in the growth process is 0.6-1.5 mm/h, and the crystal growth rotating speed is 6-20 rpm.
In particular, the Ca-containing compound is selected from the group consisting of Ca carbonates, such as CaCO3(ii) a The R-containing compound being selected from R-containing oxides, e.g. Y2O3、Gd2O3、Lu2O3One, two or three of; the Tb element containing compound is selected from the group consisting of oxides of Tb, e.g. Tb4O7(ii) a The compound containing the element M being selected from the oxides of M, e.g. Al2O3、Ga2O3One or two of them; the compound containing the element B being selected from the oxo acids of B, e.g. H3BO3(ii) a It is apparent that the molar ratio of the compound containing Ca element, the compound containing R element, the compound containing Tb element, the compound containing M element and the compound containing B element corresponds to the above-mentioned Ca element3R1- xTbx(MO)3(BO3)4The molar ratio of each element in (1).
In some embodiments, the sintering temperature in step S2 is 1000 to 1100 ℃, preferably 1050 ℃; the sintering time is 20 to 60 hours, for example, 30 hours.
In some embodiments, the growth temperature in step S3 is 1150-1350 ℃, preferably 1180-1300 ℃. In some embodiments, the method for preparing borate crystals, S1, further comprises adding the compound containing B element to the mixture obtained in step S1 again to compensate for the volatility loss of B element. The mixture is ground and then subjected to step S2, wherein the amount of the substance of the B-containing compound added again is 1 to 8%, preferably 3%, of the amount of the substance of the B-containing compound added in step S1. That is, in the present example, after the raw materials (including the compound containing the B element) are mixed in step S1, the compound containing the B element is added again.
In some embodiments, when M is selected from Ga, or a combination of Ga and Al, S1 further comprises adding a Ga-containing compound to the mixture obtained in step S1 again, grinding the mixture, and performing step S2, wherein the amount of the substance added again is 0.5 to 2.5%, preferably 2%, of the amount of the substance added in step S1. That is, in the present embodiment, when M is selected from Ga or a combination of Ga and Al, the raw materials (including the Ga-containing compound) are mixed in step S1, and then the Ga-containing compound is added again to compensate for the Ga volatilization loss during the crystal growth.
Based on the same inventive concept, the invention also provides the application of the terbium-activated borate crystal as a laser gain medium of a laser.
Specifically, the laser is a 544nm band or 586nm band laser.
Specifically, the laser is a 544nm band or 586nm band continuous solid-state laser, or a 544nm band or 586nm band solid-state pulse laser, or a 544nm band or 586nm band tunable solid-state laser.
Based on the same inventive concept, the invention also provides a 544nm band or 586nm band laser, which comprises a laser gain medium, wherein the laser gain medium adopts the terbium-activated borate crystal, and the specific laser is the existing laser.
In some embodiments, a 544nm band or 586nm band laser, as shown in fig. 3, includes a pumping system 8, specifically, the pumping system 8 includes a pumping light source 1, an optical coupling module 2, and a focusing lens module 3, and further includes an input mirror 4, a laser gain medium 5, and an output coupling mirror 7;
the pumping light source 1 is an intracavity frequency doubling optical pump semiconductor laser (abbreviated as 2 omega-OPSL) with the output wavelength range of 450-500 nm;
the optical coupling module 2 is positioned between the pump light 1 source and the focusing lens module 3;
the laser gain medium 5 is the terbium-activated borate crystal;
the laser gain medium 5 is interposed between the input mirror 4 and the output coupling mirror 7.
Wherein, the input mirror 4, the laser gain medium 5 and the output coupling mirror 7 are all positioned in the laser resonant cavity 9.
In some embodiments, the front and rear surfaces of the laser gain medium 5 are coated with antireflection coating systems for the oscillation light.
In some embodiments, the front surface of the laser gain medium 5 is coated with a film system for increasing the reflectivity of the pump light, and the rear surface is coated with a high reflectivity film system for the pump light.
In some embodiments, the input mirror 4 and the output coupling mirror 7 are plated on the input face and the output face, respectively, of the laser gain medium 5.
In some embodiments, the laser further comprises a 544nm band or 586nm band Q-switched or mode-locked element 6, forming a 544nm band or 586nm band solid-state pulsed laser.
In some embodiments, the 544nm band or 586nm band Q-switching or mode-locking element 6 is between the laser gain medium 5 and the output coupling mirror 7, or both Q-switching and mode-locking elements are placed between the laser gain medium 5 and the output coupling mirror 7.
In some embodiments, the input mirror 4 may be directly plated on the input end face of the laser gain medium 5, and the output coupling mirror 7 may be directly plated on the output end face of the Q-switching or mode-locking element 6.
In some embodiments, the Q-switching element is a passive Q-switching chip such as Cr4+YAG crystal, Cr4+GSGG crystal or acousto-optic Q-switching module.
In some embodiments, the laser also contains a wavelength tuning element with a wavelength of 544nm band or a wavelength of 586nm band, so that the 544nm band or 586nm band tunable solid-state laser is formed. The wavelength tuning element may be selected from birefringent filters, gratings or prisms, etc.
In some embodiments, the tuning element is between the laser gain medium 5 and the output coupling mirror 7.
The preparation and use of the terbium-activated borate crystals of the present invention are further illustrated by the following specific examples.
Example 1
2 omega-OPSL end-face pumping Ca with output wavelength of 482nm3Gd0.2Tb0.8(AlO)3(BO3)4The crystal realizes 544nm and 586nm or 590nm solid laser output.
Specifically, Ca is grown by a Czochralski method3Gd0.2Tb0.8(AlO)3(BO3)4The crystal is prepared by the following specific steps: s1, using CaCO3、Gd2O3、Tb4O7、Al2O3、H3BO3As raw materials, according to crystal chemistry
Proportioning according to the formula ratio;
s2, continuing to add H to the raw material obtained in the step S13BO3Addition of H3BO3In an amount of H added in step S13BO32% of the amount of substance(s);
s3, grinding the raw materials in the step S2 for 20 hours, then pressing and caking the uniformly ground mixed raw materials into blocks, sintering the blocks at 1100 ℃ for 30 hours, and synthesizing a polycrystalline material after full reaction;
s4, placing the obtained polycrystalline material in a single crystal furnace for growth, wherein the growth temperature interval is 1300 ℃, the rotating speed is 10rpm/min, the pulling speed is 1.0mm/h, after the polycrystalline material grows to the required size, lifting the crystal out of the liquid level, then cooling the crystal in a segmented mode, the average cooling speed is 20 ℃/h, and after the temperature in the furnace is reduced to the room temperature, taking the crystal out.
Ca obtained by the above-mentioned preparation3Gd0.2Tb0.8(AlO)3(BO3)4The XRD profile of the crystal is shown in FIG. 1, and it can be seen from FIG. 1 that Ca prepared in example 13Gd0.2Tb0.8(AlO)3(BO3)4The powder diffraction data of the crystals and the CYAB crystal standard card are consistent, and the high-concentration Tb doping cannot influence the phase structure of the crystals.
The crystal obtained by the preparation method belongs to a trigonal systemThe space group is P63/m, the crystal is a uniaxial crystal, and the optical main axis of the uniaxial crystal is parallel to the c axis of the crystallographic main axis of the crystal. After orientation with a polarizing microscope, slices were taken with the clear side perpendicular to the c-axis, since the absorption coefficient at 482nm of the pump light was about 0.5cm-1The crystal sample with a thickness of 7.1mm (end area is generally square millimeter to square centimeter) was cut at an absorption rate of 70%, polished and fixed on a copper holder with a light-passing hole in the middle and placed in a laser resonator. The transmittance T of the laser resonant cavity input mirror at the wavelength of 482nm is 90%, and the transmittance T at the wavelength of 544nm is 0.1%; the transmittance T of the output coupling mirror of the laser resonant cavity at the wavelength of 544nm is 3.0 percent. And 544nm solid laser output with continuous output power higher than 400mW can be obtained by using 3W 2 omega-OPSL with the output wavelength of 482nm as a pumping source end face pump.
When the same input mirror parameters are set and the transmittance T of the laser resonator output coupling mirror at the wavelength of 544nm is 2.5%, the 586nm solid laser output with continuous output power higher than 100mW can be obtained by using 2 omega-OPSL with the output wavelength of 3W of 482nm as the pumping source end face pumping.
The same purpose can be achieved by respectively and directly plating the input and output coupling mirrors of the laser resonant cavity on the input surface and/or the output surface of the laser crystal.
Example 2
End-pumped Ca by 2 omega-OPSL end-face pump with output wavelength of 483nm3Y0.15Tb0.85(AlO)3(BO3)4The crystal realizes 545nm and 587nm solid laser output.
Ca growth by Czochralski method3Y0.15Tb0.85(AlO)3(BO3)4The crystal can be prepared by the method shown in example 1.
The crystal is a uniaxial crystal, and the optical main axis of the uniaxial crystal is parallel to the crystallographic main axis c axis of the crystal. After orientation with a polarizing microscope, slices were taken with the clear areas perpendicular to the c-axis, since the absorption coefficient at 483nm of the pump light was about 0.4cm-1A sample of the crystal having a thickness of 8.9mm (end area typically square millimeters to square centimeters) was cut at an absorption rate of 70%, and the end surface was polishedThen fixed on a copper seat with a light through hole in the middle and arranged in the laser resonant cavity. The transmittance T of the laser resonant cavity input mirror at 483nm is 90%, and the transmittance T at 545nm is 0.1%; the transmittance T of the laser resonant cavity output coupling mirror at the wavelength of 545nm is 3.0%. And 3W 2 omega-OPSL with the output wavelength of 483nm is used as a pumping source end face to pump, and 545nm solid laser output with continuous output power higher than 350mW can be obtained.
When the same input mirror parameters are set and the transmittance T of the laser resonator output coupling mirror at the wavelength of 545nm is 2.0%, 587nm solid laser output with continuous output power higher than 120mW can be obtained by using 2 omega-OPSL with the output wavelength of 3W of 483nm as a pump source end face pump.
The same purpose can be achieved by respectively and directly plating the input and output coupling mirrors of the laser resonant cavity on the input surface and/or the output surface of the laser crystal.
Example 3
End-pumped Ca by using 2 omega-OPSL with output wavelength of 483nm3Lu0.05Tb0.95(GaO)3(BO3)4The crystal realizes 545nm and 586nm solid laser output.
Ca growth by Czochralski method3Lu0.05Tb0.95(GaO)3(BO3)4The crystal can be prepared by the method shown in example 1.
The crystal is a uniaxial crystal, and the optical main axis of the uniaxial crystal is parallel to the crystallographic main axis c axis of the crystal. After orientation with a polarizing microscope, slices were taken with the light-passing surface perpendicular to the c-axis, since the absorption coefficient at 483nm of the pump light was about 0.47cm-1The crystal sample with a thickness of 7.6mm (end area is generally square millimeter to square centimeter) was cut at an absorption rate of 70%, polished and fixed on a copper holder with a light-passing hole in the middle and placed in a laser resonator. The transmittance T of the laser resonant cavity input mirror at 483nm is 90%, and the transmittance T at 545nm is 0.1%; the transmittance T of the output coupling mirror of the laser resonant cavity at the wavelength of 544nm is 3.0 percent. 2 omega-OPSL with the output wavelength of 483nm of 3W is used as a pumping source end face pump to obtain the continuous output power higher than 270mWAnd (5) outputting 545nm solid laser.
When the same input mirror parameters are set and the transmittance T of the laser resonant cavity output coupling mirror at the wavelength of 545nm is 2.0%, the 586nm solid laser output with continuous output power higher than 80mW can be obtained by using 2 omega-OPSL with the output wavelength of 3W of 483nm as the pumping source end face pumping.
Example 4
2 omega-OPSL end-pumped Ca with output wavelength of 482nm3Gd0.2Tb0.8(AlO)3(BO3)4The crystal realizes Q-switched pulse laser output with wavelengths near 544nm and 586nm respectively.
Directly adjust Q-switched passive chip (such as Cr) in 544nm band4+YAG crystal, Cr4+GSGG crystal, etc.) or an acousto-optic Q-switched module is inserted between the laser crystal and the output coupling mirror in any of embodiments 1-3, thereby realizing Q-switched pulsed laser operation with wavelength near 544nm or 586 nm. The input mirror can be directly plated on the input end face of the laser gain medium, and the output coupling mirror can be directly plated on the output end face of the Q-switching or mode-locking element, so as to achieve the same purpose.
Example 5
2 omega-OPSL end-pumped Ca with output wavelength of 482nm3Gd0.2Tb0.8(AlO)3(BO3)4The crystal can realize tunable solid laser output with wavelengths near 544nm and 586nm respectively.
Any one of the laser crystal samples in the embodiments 1 to 3 is fixed on a copper base with a light through hole in the middle and is arranged in a laser resonant cavity. The transmittance T of the laser resonant cavity input mirror at the wavelength of 482nm is 90%, and the transmittance T at the waveband of 544nm is 0.1%; the transmissivity T of the output coupling mirror of the laser resonant cavity in the 544nm wave band is 1.0%. A544 nm band wavelength tuning element (a birefringent filter, a grating or a prism and the like) is inserted between a laser crystal and a laser resonant cavity output coupling mirror, and the 544nm band tunable laser output can be realized by utilizing a 482nm 2 omega-OPSL end-face pump.
When the transmittance T of the 586nm band is 0.1%, the transmittance T of the laser resonator output coupling mirror of the 586nm band is 1.5%, and a wavelength tuning element (birefringent filter, grating or prism, etc.) of 544nm band is inserted between the laser crystal and the laser resonator output coupling mirror, the 586nm band tunable solid laser output can be realized by 482nm 2 ω -OPSL end-face pumping.
Test Tb3+Ca ion different doping concentration3Gd1-xTbx(AlO)3(BO3)4The fluorescence emission pattern of the crystal sample at room temperature under excitation at 482nm is shown in FIG. 3, wherein x is 0.1, 0.3, 0.5, 0.7, 0.9 and 1, and it can be seen from FIG. 3 that Tb is highly concentrated3+The doping can improve the absorption coefficient, but does not cause fluorescence concentration quenching, and is beneficial to realizing high-performance laser operation.
The invention is not to be considered as limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed.
Claims (6)
1. A544 nm band or 586nm band laser comprises a pump light source, an optical coupling module, a focusing lens module, an input mirror, a laser gain medium, and an output coupling mirror;
the pumping light source comprises a frequency doubling optical pump semiconductor laser with the output wavelength range of 450-500 nm;
the optical coupling module is positioned between the pumping light source and the focusing lens module;
the laser gain medium is a terbium-activated borate crystal, and the chemical formula of the terbium-activated borate crystal is Ca3Gd1- xTbx(AlO)3(BO3)4X is 0.50-1.00, the terbium-activated borate crystal belongs to a hexagonal crystal system, and the space group is P63/m;
the laser gain medium is interposed between the input mirror and the output coupling mirror.
2. The 544nm band or 586nm band laser of claim 1, wherein the input and output coupling mirrors are plated on the input and output faces, respectively, of the laser gain medium.
3. The 544nm band or 586nm band laser of claim 1, further comprising a 544nm band or 586nm band Q-switched or mode-locked element;
the Q-switching or mode-locking element with the 544nm waveband or the 586nm waveband is arranged between the laser gain medium and the output coupling mirror, or the Q-switching and mode-locking element is arranged between the laser gain medium and the output coupling mirror;
the Q-switching element is a passive Q-switching sheet made of Cr4+YAG crystal, Cr4+GSGG crystal or acousto-optic Q-switching module;
the laser also comprises a wavelength tuning element with a 544nm band or a 586nm band;
the wavelength tuning element is between the laser gain medium and the output coupling mirror;
the wavelength tuning element is selected from one of a birefringent filter, a grating or a prism.
4. A method for preparing a crystal of terbium-activated borate in a 544nm band or 586nm band laser according to claim 1,
the terbium-activated borate crystal is prepared by adopting a Czochralski method, and the preparation method of the crystal comprises the following steps:
s1, mixing and grinding a compound containing Ca element, a compound containing Gd element, a compound containing Tb element, a compound containing Al element and a compound containing B element;
s2, sintering the ground compound to obtain a polycrystalline material;
and S3, growing the obtained polycrystalline material.
5. The method for preparing a terbium-activated borate crystal according to claim 4, wherein in step S1, said Ca element-containing compound is selected from Ca carbonates, said Gd element-containing compound is selected from Gd oxides, said Tb element-containing compound is selected from Tb oxides, said Al element-containing compound is selected from Al oxides, and said B element-containing compound is selected from B oxyacids;
in the step S2, the sintering temperature is 1000-1100 ℃;
and S3, growing in a single crystal furnace at 1150-1350 deg.c and pulling speed of 0.6-1.5 mm/hr and crystal growing speed of 6-20 rpm.
6. The method for producing a terbium-activated borate crystal according to claim 4, wherein S1 further comprises adding a B element-containing compound again to the mixture obtained in step S1, grinding the mixture, and then performing step S2, wherein the amount of the B element-containing compound added again is 1 to 8% of the amount of the B element-containing compound added in step S1.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005053121A1 (en) * | 2003-11-28 | 2005-06-09 | Oleg Victorovich Kuzmin | Laser material |
| CN1837418A (en) * | 2005-03-25 | 2006-09-27 | 中国科学院福建物质结构研究所 | Ytterbium doped Ca3La2(BO3)4 laser crystal, its preparation method and use |
| CN101212122A (en) * | 2006-12-27 | 2008-07-02 | 中国科学院福建物质结构研究所 | Ytterbium doped gadolinium lanthanum calcium oxoborate laser crystal, producing method, and purpose |
| CN102766906A (en) * | 2011-05-05 | 2012-11-07 | 中国科学院福建物质结构研究所 | Erbium ion activated 3-micron wave-band gallate laser crystal and its preparation method |
| CN103422172A (en) * | 2013-08-16 | 2013-12-04 | 山东大学 | High-performance photoelectric functional calcium borate thulium oxide crystal and growth and application thereof |
| CN103628138A (en) * | 2013-12-05 | 2014-03-12 | 山东大学 | Large-size mass terbium calcium oxide borate crystal, and growth and application of crystal |
| CN104009390A (en) * | 2014-06-13 | 2014-08-27 | 中国科学院福建物质结构研究所 | Ytterbium activation boric acid lanthanum calcium ultrafast laser crystal |
| CN106521626A (en) * | 2015-09-09 | 2017-03-22 | 中国科学院理化技术研究所 | High terbium concentration borate and preparation method and application thereof |
| CN109652856A (en) * | 2019-02-01 | 2019-04-19 | 中国科学院福建物质结构研究所 | Tb3+Self-activated laser crystal, preparation method and the application in visible waveband solid state laser |
| CN110541197A (en) * | 2019-10-17 | 2019-12-06 | 中国工程物理研究院化工材料研究所 | Ytterbium-doped calcium-gadolinium-lanthanum borate mixed crystal laser crystal and preparation method and application thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546566A (en) * | 2016-06-28 | 2018-01-05 | 中国科学院福建物质结构研究所 | The mesosilicate crystal and its visible waveband Solid Laser Elements of dysprosium ion activating |
-
2021
- 2021-03-18 CN CN202110291516.6A patent/CN113067245B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005053121A1 (en) * | 2003-11-28 | 2005-06-09 | Oleg Victorovich Kuzmin | Laser material |
| CN1837418A (en) * | 2005-03-25 | 2006-09-27 | 中国科学院福建物质结构研究所 | Ytterbium doped Ca3La2(BO3)4 laser crystal, its preparation method and use |
| CN101212122A (en) * | 2006-12-27 | 2008-07-02 | 中国科学院福建物质结构研究所 | Ytterbium doped gadolinium lanthanum calcium oxoborate laser crystal, producing method, and purpose |
| CN102766906A (en) * | 2011-05-05 | 2012-11-07 | 中国科学院福建物质结构研究所 | Erbium ion activated 3-micron wave-band gallate laser crystal and its preparation method |
| CN103422172A (en) * | 2013-08-16 | 2013-12-04 | 山东大学 | High-performance photoelectric functional calcium borate thulium oxide crystal and growth and application thereof |
| CN103628138A (en) * | 2013-12-05 | 2014-03-12 | 山东大学 | Large-size mass terbium calcium oxide borate crystal, and growth and application of crystal |
| CN104009390A (en) * | 2014-06-13 | 2014-08-27 | 中国科学院福建物质结构研究所 | Ytterbium activation boric acid lanthanum calcium ultrafast laser crystal |
| CN106521626A (en) * | 2015-09-09 | 2017-03-22 | 中国科学院理化技术研究所 | High terbium concentration borate and preparation method and application thereof |
| CN109652856A (en) * | 2019-02-01 | 2019-04-19 | 中国科学院福建物质结构研究所 | Tb3+Self-activated laser crystal, preparation method and the application in visible waveband solid state laser |
| CN110541197A (en) * | 2019-10-17 | 2019-12-06 | 中国工程物理研究院化工材料研究所 | Ytterbium-doped calcium-gadolinium-lanthanum borate mixed crystal laser crystal and preparation method and application thereof |
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