CN113066785A - Crimping type power semiconductor module structure, subunit and manufacturing method thereof - Google Patents
Crimping type power semiconductor module structure, subunit and manufacturing method thereof Download PDFInfo
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- CN113066785A CN113066785A CN202110292578.9A CN202110292578A CN113066785A CN 113066785 A CN113066785 A CN 113066785A CN 202110292578 A CN202110292578 A CN 202110292578A CN 113066785 A CN113066785 A CN 113066785A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/32—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in transmittance, scattering or luminescence in optical fibres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- General Physics & Mathematics (AREA)
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Abstract
The invention relates to a crimping type power semiconductor module structure, a subunit and a manufacturing method thereof, and belongs to the field of power semiconductor devices. The silver-plated chip comprises an insulating frame, and a silver sheet, a lower molybdenum sheet, a chip and an upper molybdenum sheet which are sequentially stacked in the insulating frame from bottom to top; the insulating frame is provided with a spring needle which is connected with a grid of the chip; the surface of the lower molybdenum sheet contacting the chip is provided with a groove which is horizontally penetrated, the optical fiber passes through the groove, and more than one grating is integrated on the optical fiber in the groove. The distributed online real-time measurement of the junction temperature of the chip in the device package can be conveniently realized. Moreover, the fiber grating has small volume, light weight, small influence on the structure and easy arrangement; only in the normal packaging process, the installation steps of the fiber bragg grating are added. The optical fiber manufacturing material has good electrical insulation, and the structure and the function of the crimping type power semiconductor module are not influenced after the optical fiber manufacturing material is integrated.
Description
Technical Field
The invention belongs to the field of power semiconductor devices, and relates to a crimping type power semiconductor module structure, a subunit and a manufacturing method thereof.
Background
The high-capacity crimping type IGBT device adopts multi-chip parallel packaging, and junction temperature distribution of parallel chips is not uniform. Simulation results show that in the working process of the device, due to thermal deformation of the packaging structure, the maximum junction temperature difference of different chips can be dozens of degrees centigrade. In order to avoid the failure of the device caused by the overheating of a local chip and improve the operation reliability of the converter, the operation junction temperature distribution of the crimping type IGBT device needs to be monitored on line.
The junction temperature monitoring method of the power device can be divided into a direct measurement method and an indirect measurement method, wherein the direct measurement method directly measures the junction temperature in a physical contact or optical non-contact mode, and the indirect measurement method mainly utilizes thermal-sensitive electrical parameters to indirectly calculate the junction temperature of a chip. The physical contact method is represented by a thermocouple and a thermal resistor, has low cost, but has long response time, is easily influenced by electromagnetic interference, is limited by a compact structure of a compression joint packaging device and a working mode of external pressure application, and is difficult to realize the distributed measurement of the multi-chip junction temperature. The optical non-contact method is represented by an infrared thermal imaging method, the surface of a chip needs to be aligned during measurement, the optical non-contact method is limited by a compression joint device packaging structure, the side surface temperature of a few chips can be measured, and the device needs to be unsealed. The thermal-sensitive electrical parameters include various static and dynamic parameters, but are invasive in measurement and easy to be subjected to electromagnetic interference, and the obtained junction temperature is mostly the average junction temperature of the whole device, and the difference of the junction temperature distribution of the parallel chips cannot be reflected.
In summary, the conventional junction temperature monitoring method has limitations when used for monitoring junction temperature of a crimp-type package, cannot monitor junction temperature of all chips, is easily interfered and limited by the environment, and is difficult to be applied in engineering practice.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a crimping type power semiconductor module structure with a real-time temperature monitoring function, a subunit thereof, and a manufacturing method thereof, so as to solve the problems that the junction temperature monitoring of the conventional crimping type power semiconductor device has limitations, the junction temperatures of all chips cannot be monitored, and the conventional crimping type power semiconductor device is easily interfered and limited by the environment.
In order to achieve the purpose, the invention provides the following technical scheme:
the subunit of the crimping type power semiconductor module structure comprises an insulating frame, and a silver sheet, a lower molybdenum sheet, a chip and an upper molybdenum sheet which are sequentially stacked in the insulating frame from bottom to top; the insulating frame is provided with a spring needle which is connected with a grid of the chip; the surface of the lower molybdenum sheet contacting the chip is provided with a groove which is horizontally penetrated, the optical fiber passes through the groove, and more than one grating is integrated on the optical fiber in the groove.
Furthermore, a sleeve is sleeved outside the grating and arranged in the groove, and the top of the sleeve is flush with the surface of the lower molybdenum sheet contacting the chip so that the sleeve is attached to the surface of the chip.
Furthermore, the sleeve is made of stainless steel.
Further, the wall thickness of the sleeve is 0.1mm, the gap between the sleeve and the groove is 0.05-0.1 mm, and the gap between the sleeve and the optical fiber is 0.05 mm.
Further, the trench extends along the center of the surface of the lower molybdenum sheet contacting the chip.
Further, the chip is an IGBT chip or an FRD chip.
Furthermore, the front surface of the chip is connected with the lower molybdenum sheet through mechanical pressure, and the back surface of the chip is connected with the upper molybdenum sheet through sintering or mechanical pressure.
The crimping type power semiconductor module structure comprises a shell, a substrate, a PCB (printed circuit board) reticular plate and a plurality of subunits, wherein the substrate, the PCB reticular plate and the subunits are sequentially stacked and encapsulated in the shell from bottom to top; the spring needle of the subunit is connected with the PCB reticular board; the optical fibers of the subunits are connected to fiber optic interfaces integrated on the housing.
Further, the housing includes a case with an opening and a cover plate covering the opening of the case; the shell is made of ceramic, and the cover plate and the base plate are made of copper.
The manufacturing method of the crimping type power semiconductor module structure comprises the following steps:
s1, enabling the optical fiber integrated with the grating to penetrate through a groove formed in the surface of a lower molybdenum sheet;
s2, mounting the spring pin on an insulating frame, sequentially stacking a silver sheet, a lower molybdenum sheet, a chip and an upper molybdenum sheet into the insulating frame, and connecting one end of the spring pin with a grid of the chip to form a subunit;
s3, sequentially stacking the substrate, the PCB mesh plate and the plurality of subunits in the shell, wherein the plurality of subunits are arranged on the substrate in parallel through the PCB mesh plate, and the other ends of the spring pins of the subunits are connected with the PCB mesh plate and connect the optical fibers with the optical fiber interface integrated on the shell;
and S4, filling nitrogen into the shell, and pressurizing and sealing the shell.
The invention has the beneficial effects that:
(1) the fiber bragg grating is integrated on the subunit and packaged in the crimping type power semiconductor module structure, and the fiber bragg grating is small in size, light in weight, small in influence on the structure and easy to arrange; the electrical insulation of the optical fiber manufacturing material is good, and the structure and the function of the crimping type power semiconductor module structure are not affected after the optical fiber manufacturing material is integrated; the packaging process is easy to operate, and only the installation steps of the fiber bragg grating are needed to be added in the normal packaging process.
(2) The measurement and detection amount is wavelength information, the transmission loss is small, and long-distance signal transmission can be realized; the measuring process is non-invasive, is not interfered by the electromagnetic interference of the surrounding environment, has higher result precision and is convenient to be applied in engineering practice.
(3) The invention can integrate more than one grating on one optical fiber, conveniently realize the distributed online real-time measurement of the chip junction temperature in the device package, does not need to additionally install a temperature sensor, and has simple measurement steps.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.
Drawings
For the purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made to the following detailed description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic cross-sectional view of a crimp-type power semiconductor module structure;
FIG. 2 is an exploded view of a subunit;
fig. 3 is a schematic diagram of the arrangement of optical fibers in a subunit.
Reference numerals: the LED packaging structure comprises a shell 1, a substrate 2, a cover plate 3, a PCB mesh plate 4, a subunit 5, an optical fiber 51, a grating 511, a sleeve 512, an upper molybdenum sheet 52, an IGBT chip 53, a grid 531, a lower molybdenum sheet 54, a groove 541, a silver sheet 55, a spring needle 56, an insulating frame 57 and a through hole 571.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention in a schematic way, and the features in the following embodiments and examples may be combined with each other without conflict.
Wherein the showings are for the purpose of illustrating the invention only and not for the purpose of limiting the same, and in which there is shown by way of illustration only and not in the drawings in which there is no intention to limit the invention thereto; to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", "front", "rear", etc., based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of description, but it is not an indication or suggestion that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes, and are not to be construed as limiting the present invention, and the specific meaning of the terms may be understood by those skilled in the art according to specific situations.
Referring to fig. 1, a crimping type power semiconductor module structure includes a housing composed of a ceramic case 1 with an opening and a copper cover plate 3 covering the opening of the case 1, a copper substrate 2, a PCB mesh plate 4 and a plurality of sub-units 5 are stacked in the case 1 from bottom to top in sequence, and the sub-units 5 are arranged on the substrate 2 in parallel through the PCB mesh plate 4; the side wall of the housing 1 is integrated with an optical fiber interface to connect with the optical fiber 51 of the subunit 5; the cover plate 3 is disposed over the sub-unit 5 to close the housing 1.
As shown in fig. 2 and 3, the subunit 5 of the present embodiment takes the IGBT subunit 5 as an example, and includes an insulating frame 57, and a silver sheet 55, a lower molybdenum sheet 54, an IGBT chip 53, and an upper molybdenum sheet 52 stacked in the insulating frame 57 from bottom to top in sequence; the insulating frame 57 is provided with a through hole 571, a spring needle 56 is inserted into the through hole 571, the upper end of the spring needle 56 is connected with the gate 531 of the IGBT chip 53, and the lower end of the spring needle 56 is connected with the PCB mesh board 4.
The center of the surface of the lower molybdenum sheet 54 contacting the IGBT chip 53 is provided with a horizontally through groove 541, the optical fiber 51 is integrated with more than one grating 511, a stainless steel sleeve 512 is sleeved outside the grating 511, the optical fiber 51 passes through the groove 541, the sleeve 512 is arranged in the groove 541, and the top of the sleeve 512 is flush with the surface of the lower molybdenum sheet 54 contacting the IGBT chip 53, so that the sleeve 512 is tightly attached to the surface of the IGBT chip 53. The wall thickness of the sleeve 512 is 0.1mm, the gap between the sleeve 512 and the groove 541 is 0.05-0.1 mm, and the gap between the sleeve 512 and the optical fiber 51 is 0.05 mm.
The manufacturing method of the crimping type power semiconductor module structure comprises the following steps:
s1, penetrating an optical fiber 51 integrated with a grating 511 into a sleeve 512, placing the grating 511 into the sleeve 512, and sealing two ends of the sleeve 512 by glue (such as heat-conducting glue); uniformly coating a layer of glue (such as heat-conducting glue) on the wall surface of the groove 541 of the lower molybdenum sheet 54, adhering the sleeve 512 in the groove 541, enabling the top of the sleeve 512 to be flush with the surface of the lower molybdenum sheet 54 contacting the IGBT chip 53, and keeping the gap between the sleeve 512 and the groove 541 at 0.05-0.1 mm;
s2, placing the spring needle 56 in a through hole 571 of the insulating frame 57, sequentially stacking a silver sheet 55, a lower molybdenum sheet 54, an IGBT chip 53 and an upper molybdenum sheet 52 in the insulating frame 57, and connecting the upper end of the spring needle 56 with a grid 531 of the IGBT chip 53 to form a subunit 5; the front surface of the IGBT chip 53 is connected with the lower molybdenum sheet 54 through mechanical pressure, and the back surface of the IGBT chip 53 is connected with the upper molybdenum sheet 52 through mechanical pressure;
s3, sequentially stacking the substrate 2, the PCB mesh-shaped plate 4 and the plurality of subunits 5 in the shell 1, wherein the plurality of subunits 5 are arranged on the substrate 2 in parallel through the PCB mesh-shaped plate 4, the lower ends of the spring pins 56 of the subunits 5 are connected with the PCB mesh-shaped plate 4, and the optical fibers 51 are connected with the optical fiber interfaces integrated on the side wall of the shell 1;
and S4, filling nitrogen into the shell 1, covering the cover plate 3, and pressurizing and sealing to obtain the crimping type power semiconductor module structure.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.
Claims (10)
1. A subunit of a crimped power semiconductor module structure, characterized by: the silver-plated chip comprises an insulating frame, and a silver sheet, a lower molybdenum sheet, a chip and an upper molybdenum sheet which are sequentially stacked in the insulating frame from bottom to top; the insulating frame is provided with a spring needle which is connected with a grid of the chip; the surface of the lower molybdenum sheet contacting the chip is provided with a groove which is horizontally penetrated, the optical fiber passes through the groove, and more than one grating is integrated on the optical fiber in the groove.
2. The sub-unit of the crimped power semiconductor module structure according to claim 1, wherein: the grating is sleeved with a sleeve, the sleeve is arranged in the groove, and the top of the sleeve is flush with the surface of the lower molybdenum sheet contacting the chip so that the sleeve is tightly attached to the surface of the chip.
3. The sub-unit of the crimped power semiconductor module structure according to claim 2, wherein: the sleeve is made of stainless steel.
4. The sub-unit of the crimped power semiconductor module structure according to claim 2, wherein: the wall thickness of the sleeve is 0.1mm, the gap between the sleeve and the groove is 0.05-0.1 mm, and the gap between the sleeve and the optical fiber is 0.05 mm.
5. The sub-unit of the crimped power semiconductor module structure according to claim 1, wherein: the groove extends along the center of the surface of the lower molybdenum sheet contacting the chip.
6. The sub-unit of the crimped power semiconductor module structure according to claim 1, wherein: the chip is an IGBT chip or an FRD chip.
7. The sub-unit of the crimped power semiconductor module structure according to claim 1, wherein: the front surface of the chip is connected with the lower molybdenum sheet through mechanical pressure, and the back surface of the chip is connected with the upper molybdenum sheet through sintering or mechanical pressure.
8. A crimping type power semiconductor module structure, characterized in that: the packaging structure comprises a shell, a substrate, a PCB (printed circuit board) meshed plate and a plurality of subunits according to any one of claims 1-7, wherein the substrate, the PCB meshed plate and the subunits are sequentially stacked from bottom to top and are packaged in the shell; the spring needle of the subunit is connected with the PCB reticular board; the optical fibers of the subunits are connected to fiber optic interfaces integrated on the housing.
9. The crimping type power semiconductor module structure according to claim 8, characterized in that: the shell comprises a shell with an opening and a cover plate covering the opening of the shell; the shell is made of ceramic, and the cover plate and the base plate are made of copper.
10. The manufacturing method of the crimping type power semiconductor module structure is characterized in that: the method comprises the following steps:
s1, enabling the optical fiber integrated with the grating to penetrate through a groove formed in the surface of a lower molybdenum sheet;
s2, mounting the spring pin on an insulating frame, sequentially stacking a silver sheet, a lower molybdenum sheet, a chip and an upper molybdenum sheet into the insulating frame, and connecting one end of the spring pin with a grid of the chip to form a subunit;
s3, sequentially stacking the substrate, the PCB mesh plate and the plurality of subunits in the shell, wherein the plurality of subunits are arranged on the substrate in parallel through the PCB mesh plate, and the other ends of the spring pins of the subunits are connected with the PCB mesh plate and connect the optical fibers with the optical fiber interface integrated on the shell;
and S4, filling nitrogen into the shell, and pressurizing and sealing the shell.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110292578.9A CN113066785A (en) | 2021-03-18 | 2021-03-18 | Crimping type power semiconductor module structure, subunit and manufacturing method thereof |
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| CN202110292578.9A CN113066785A (en) | 2021-03-18 | 2021-03-18 | Crimping type power semiconductor module structure, subunit and manufacturing method thereof |
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| CN113571481A (en) * | 2021-07-23 | 2021-10-29 | 上海大学 | Semiconductor device and assembly thereof |
| CN113834527A (en) * | 2021-09-18 | 2021-12-24 | 重庆大学 | Crimping type power semiconductor structure and internal pressure online measurement method thereof |
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| CN113834527A (en) * | 2021-09-18 | 2021-12-24 | 重庆大学 | Crimping type power semiconductor structure and internal pressure online measurement method thereof |
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