CN113066711A - Method and device for removing phosphorus pollutants - Google Patents
Method and device for removing phosphorus pollutants Download PDFInfo
- Publication number
- CN113066711A CN113066711A CN202110295692.7A CN202110295692A CN113066711A CN 113066711 A CN113066711 A CN 113066711A CN 202110295692 A CN202110295692 A CN 202110295692A CN 113066711 A CN113066711 A CN 113066711A
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- gas
- phosphorus
- reaction chamber
- chamber
- pollutants
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 113
- 239000011574 phosphorus Substances 0.000 title claims abstract description 113
- 229910052698 phosphorus Inorganic materials 0.000 title claims abstract description 113
- 239000003344 environmental pollutant Substances 0.000 title claims abstract description 78
- 231100000719 pollutant Toxicity 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000006243 chemical reaction Methods 0.000 claims abstract description 60
- 239000007787 solid Substances 0.000 claims abstract description 32
- 230000003647 oxidation Effects 0.000 claims abstract description 25
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 25
- 230000008859 change Effects 0.000 claims abstract description 16
- 238000000605 extraction Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 122
- 239000001301 oxygen Substances 0.000 claims description 53
- 229910052760 oxygen Inorganic materials 0.000 claims description 53
- 239000000356 contaminant Substances 0.000 claims description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 9
- 238000009832 plasma treatment Methods 0.000 claims description 6
- 239000007800 oxidant agent Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 8
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Abstract
The invention provides a method and a device for removing phosphorus pollutants, wherein the method comprises the following steps: introducing preset gas into the reaction chamber, and reacting with the phosphorus pollutants on the oxidation machine table in the reaction chamber to change the solid phosphorus pollutants into gaseous state; and carrying out gas extraction on the gas in the reaction chamber. That is to say, the removing method is characterized in that gas capable of reacting with the phosphorus pollutants is introduced into the reaction chamber, the gas and the phosphorus pollutants react to change the solid phosphorus pollutants into gaseous state, and then the gas in the reaction chamber is pumped out, so that the purpose of removing the phosphorus pollutants is achieved.
Description
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to a method and a device for removing phosphorus pollutants.
Background
With the continuous development of science and technology, various semiconductor devices have been widely applied to the life and work of people, and great convenience is brought to the daily life of people.
In the oxidation process of polysilicon with phosphorus doped, phosphorus element can be dissipated from polysilicon at high temperature and then attached to each component of the oxidation machine, thereby influencing the subsequent process.
Therefore, the technical problem to be solved by those skilled in the art is how to remove the phosphorus contamination attached to the oxidizer.
Disclosure of Invention
In view of the above, in order to solve the above problems, the present invention provides a method and an apparatus for removing phosphorus pollutants, the technical scheme is as follows:
a method for removing phosphorus contaminants, the method comprising:
introducing preset gas into the reaction chamber, and reacting with the phosphorus pollutants on the oxidation machine table in the reaction chamber to change the solid phosphorus pollutants into gaseous state;
and carrying out gas extraction on the gas in the reaction chamber.
Preferably, in the above method, the predetermined gas is a mixed gas of hydrogen and oxygen;
the step of introducing preset gas into the reaction chamber to react with phosphorus pollutants on an oxidation machine table in the reaction chamber to change the solid phosphorus pollutants into gaseous state comprises the following steps:
introducing the mixed gas of the hydrogen and the oxygen into the reaction chamber;
performing plasma treatment on the mixed gas to generate oxygen ion gas; the oxygen ion gas is used for carrying out chemical reaction with the phosphorus pollutants under preset conditions, so that the solid phosphorus pollutants are changed into gaseous state.
Preferably, in the above method, the preset condition includes at least a temperature in the chamber;
the temperature in the chamber is 600-1100 ℃.
Preferably, in the above method, the preset condition includes at least a pressure in the chamber;
the pressure in the chamber is 1Torr-8 Toor.
Preferably, in the above method, the oxygen ion gas has a gas flow rate of 2slm to 8 slm.
Preferably, in the above method, before the step of introducing a predetermined gas into the reaction chamber to react with the phosphorus contaminant on the oxidizer in the reaction chamber, so that the solid phosphorus contaminant changes into a gas state, the method further includes:
providing a phosphorus-doped substrate to be processed;
fixing the substrate to be processed on the oxidation machine;
carrying out oxidation treatment on the substrate to be processed; and in the oxidation treatment process, the phosphorus in the substrate to be processed is diffused and further attached to the oxidation machine table to form the phosphorus pollutants.
An apparatus for removing phosphorus contaminants, the apparatus comprising:
the gas treatment assembly is used for introducing preset gas into the reaction chamber, and reacting with the phosphorus pollutant on the oxidation machine table in the reaction chamber to change the solid phosphorus pollutant into a gas state;
and the gas extraction assembly is used for extracting gas in the reaction chamber.
Preferably, in the above apparatus, the predetermined gas is a mixed gas of hydrogen and oxygen;
the gas processing assembly is specifically configured to:
introducing the mixed gas of the hydrogen and the oxygen into the reaction chamber;
performing plasma treatment on the mixed gas to generate oxygen ion gas; the oxygen ion gas is used for carrying out chemical reaction with the phosphorus pollutants under preset conditions, so that the solid phosphorus pollutants are changed into gaseous state.
Preferably, in the above apparatus, the preset condition includes at least a temperature in the chamber;
the temperature in the cavity is 600-1100 ℃;
the device further comprises: a temperature regulating component;
the temperature adjustment assembly is used for adjusting the temperature in the cavity.
Preferably, in the above apparatus, the preset condition includes at least a pressure in the chamber;
the pressure in the chamber is 1Torr-8 Toor;
the device further comprises: a pressure regulating assembly;
the pressure regulating assembly is used for regulating the pressure in the cavity.
Preferably, in the above apparatus, the oxygen ion gas has a gas flow rate of 2slm to 8 slm.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a method for removing phosphorus pollutants, which comprises the following steps: introducing preset gas into the reaction chamber, and reacting with the phosphorus pollutants on the oxidation machine table in the reaction chamber to change the solid phosphorus pollutants into gaseous state; and carrying out gas extraction on the gas in the reaction chamber. That is to say, the removing method is characterized in that gas capable of reacting with the phosphorus pollutants is introduced into the reaction chamber, the gas and the phosphorus pollutants react to change the solid phosphorus pollutants into gaseous state, and then the gas in the reaction chamber is pumped out, so that the purpose of removing the phosphorus pollutants is achieved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic flow chart of a method for removing phosphorus contaminants according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of another method for removing phosphorus contaminants according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating the reaction effect of oxygen ion gas and phosphorus contaminants according to an embodiment of the present invention;
FIG. 4 is a schematic flow chart of another method for removing phosphorus contaminants according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of an apparatus for removing phosphorus contamination according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of another apparatus for removing phosphorus contaminants according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of another apparatus for removing phosphorus contaminants according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for removing phosphorus contaminants according to an embodiment of the present invention.
The method comprises the following steps:
s101: and introducing preset gas into the reaction chamber, and reacting with the phosphorus pollutants on the oxidation machine table in the reaction chamber to change the solid phosphorus pollutants into gaseous state.
In this step, the specific kind of the predetermined gas is not limited in the embodiment of the present invention, as long as the solid phosphorus contaminant is reacted into a gas under reaction conditions that can be achieved.
S102: and carrying out gas extraction on the gas in the reaction chamber.
In the step, after the solid phosphorus pollutants completely react to be gaseous, the gas in the reaction chamber is subjected to gas extraction treatment by adopting a gas extraction device, including but not limited to, so as to achieve the purpose of removing the phosphorus pollutants.
In the embodiment, the removing method comprises the steps of introducing gas capable of reacting with the phosphorus pollutants into the reaction chamber, reacting the gas with the phosphorus pollutants to change the solid phosphorus pollutants into gaseous state, and then pumping out the gas in the reaction chamber, so as to achieve the purpose of removing the phosphorus pollutants.
Further, according to the above embodiment of the present invention, the predetermined gas is a mixed gas of hydrogen and oxygen.
Based on this, referring to fig. 2, fig. 2 is a schematic flow chart of another method for removing phosphorus contaminants according to an embodiment of the present invention.
Step S101: the method comprises the following steps of introducing preset gas into a reaction chamber, reacting with phosphorus pollutants on an oxidation machine table in the reaction chamber, and enabling the solid phosphorus pollutants to become gaseous, wherein the method specifically comprises the following steps:
s1011: and introducing the mixed gas of the hydrogen and the oxygen into the reaction chamber.
S1012: performing plasma treatment on the mixed gas to generate oxygen ion gas; the oxygen ion gas is used for carrying out chemical reaction with the phosphorus pollutants under preset conditions, so that the solid phosphorus pollutants are changed into gaseous state.
In this embodiment, referring to fig. 3, fig. 3 is a schematic diagram illustrating the reaction effect of oxygen ion gas and phosphorus contaminant according to an embodiment of the present invention.
Under the condition of a certain proportion of hydrogen and oxygen, the oxygen ion gas is formed based on an auxiliary mode of plasma, and the oxygen ion gas reacts with phosphorus pollutants to form phosphorus pentoxide, so that the aim of reacting solid phosphorus into gas is fulfilled.
In order to generate enough oxygen ion gas and achieve the purpose of completely reacting the solid phosphorus pollutants, the proportion of the hydrogen and the oxygen can be reasonably adjusted based on the amount of the solid phosphorus pollutants.
Further, according to the above embodiment of the present invention, the preset condition at least includes a temperature in the chamber;
the temperature in the chamber is 600-1100 ℃.
In this embodiment, the temperature within the chamber may be 613 ℃ or 746 ℃ or 850 ℃ or 1052 ℃ or the like.
The purpose is as follows: through the reasonable temperature in the setting chamber, guarantee that oxygen ion gas can fully react with solid-state phosphorus pollutant, reach the purpose of reacting solid-state phosphorus pollutant completely.
Further, according to the above embodiment of the present invention, the preset condition at least includes a pressure in the chamber;
the pressure in the chamber is 1Torr-8 Toor.
In this embodiment, the pressure in the chamber may be 1.6Torr, 2.5Torr, 4Torr, 5.8Torr, 7.3Torr, or the like.
The purpose is as follows: through the reasonable pressure in the setting chamber, guarantee that oxygen ion gas can fully react with solid-state phosphorus pollutant, reach the purpose of reacting solid-state phosphorus pollutant completely.
Further, according to the above embodiment of the present invention, the gas flow rate of the oxygen ion gas is 2slm to 8 slm.
In this embodiment, the gas flow rate of the oxygen ion gas is 2.3slm, 4slm, 5.3slm, 6.7slm, 7slm, or the like.
The purpose is as follows: through the reasonable proportion that sets up hydrogen and oxygen, and then control the gaseous gas flow of oxygen ion guarantees that oxygen ion gas can fully react with solid-state phosphorus pollutant, reaches the purpose of reacting solid-state phosphorus pollutant completely.
Further, based on the above embodiments of the present invention, referring to fig. 4, fig. 4 is a schematic flow chart of another method for removing phosphorus contaminants according to the embodiments of the present invention.
Before step S101 of introducing a predetermined gas into the reaction chamber to react with the phosphorus contaminant on the oxidizer in the reaction chamber to change the solid phosphorus contaminant into a gaseous state, the method further includes:
s103: providing a phosphorus-doped substrate to be processed;
s104: fixing the substrate to be processed on the oxidation machine;
s105: carrying out oxidation treatment on the substrate to be processed; and in the oxidation treatment process, the phosphorus in the substrate to be processed is diffused and further attached to the oxidation machine table to form the phosphorus pollutants.
Further, based on all the embodiments of the present invention, another embodiment of the present invention further provides a device for removing phosphorus contaminants, and referring to fig. 5, fig. 5 is a schematic structural diagram of the device for removing phosphorus contaminants according to the embodiment of the present invention.
The device comprises:
the gas processing assembly 11 is used for introducing preset gas into the reaction chamber, and reacting the preset gas with the phosphorus pollutants on the oxidation machine table in the reaction chamber to change the solid phosphorus pollutants into gaseous state;
and the gas extraction assembly 12 is used for extracting gas in the reaction chamber.
In this embodiment, gas capable of reacting with the phosphorus pollutants is introduced into the reaction chamber through the gas treatment assembly 11, and reacts with the gas to change the solid phosphorus pollutants into gaseous state, and then the gas in the reaction chamber is extracted through the gas extraction assembly 12, so as to achieve the purpose of removing the phosphorus pollutants.
Further, based on the above embodiment of the present invention, the preset gas is a mixed gas of hydrogen and oxygen;
the gas treatment assembly 12 is particularly configured to:
introducing the mixed gas of the hydrogen and the oxygen into the reaction chamber;
performing plasma treatment on the mixed gas to generate oxygen ion gas; the oxygen ion gas is used for carrying out chemical reaction with the phosphorus pollutants under preset conditions, so that the solid phosphorus pollutants are changed into gaseous state.
In the embodiment, under the condition of a certain proportion of hydrogen and oxygen, the oxygen ion gas is formed based on the auxiliary mode of plasma, and is made to react with phosphorus pollutants to form phosphorus pentoxide, so that the aim of reacting solid phosphorus into gas is fulfilled.
In order to generate enough oxygen ion gas and achieve the purpose of completely reacting the solid phosphorus pollutants, the proportion of the hydrogen and the oxygen can be reasonably adjusted based on the amount of the solid phosphorus pollutants.
Further, referring to fig. 6 based on the above embodiments of the present invention, fig. 6 is a schematic structural diagram of another apparatus for removing phosphorus contaminants according to an embodiment of the present invention.
The preset conditions at least comprise the temperature in the cavity;
the temperature in the cavity is 600-1100 ℃;
the device further comprises: a temperature adjusting assembly 13;
the temperature regulating assembly 13 is used to regulate the temperature within the chamber.
In this embodiment, the temperature within the chamber may be 613 ℃ or 746 ℃ or 850 ℃ or 1052 ℃ or the like.
The purpose is as follows: through the reasonable temperature in the setting chamber, guarantee that oxygen ion gas can fully react with solid-state phosphorus pollutant, reach the purpose of reacting solid-state phosphorus pollutant completely.
Further, referring to fig. 7 based on the above embodiments of the present invention, fig. 7 is a schematic structural diagram of another apparatus for removing phosphorus contaminants according to an embodiment of the present invention.
The preset condition at least comprises the pressure in the cavity;
the pressure in the chamber is 1Torr-8 Toor;
the device further comprises: a pressure regulating assembly 14;
the pressure regulating assembly 14 is used to regulate the pressure within the chamber.
In this embodiment, the pressure in the chamber may be 1.6Torr, 2.5Torr, 4Torr, 5.8Torr, 7.3Torr, or the like.
The purpose is as follows: through the reasonable pressure in the setting chamber, guarantee that oxygen ion gas can fully react with solid-state phosphorus pollutant, reach the purpose of reacting solid-state phosphorus pollutant completely.
Further, according to the above embodiment of the present invention, the gas flow rate of the oxygen ion gas is 2slm to 8 slm.
In this embodiment, the gas flow rate of the oxygen ion gas is 2.3slm, 4slm, 5.3slm, 6.7slm, 7slm, or the like.
The purpose is as follows: through the reasonable proportion that sets up hydrogen and oxygen, and then control the gaseous gas flow of oxygen ion guarantees that oxygen ion gas can fully react with solid-state phosphorus pollutant, reaches the purpose of reacting solid-state phosphorus pollutant completely.
The method and apparatus for removing phosphorus contaminants provided by the present invention are described in detail above, and the principle and embodiments of the present invention are explained herein by using specific examples, which are only used to help understand the method and core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (11)
1. A method for removing phosphorus contaminants, the method comprising:
introducing preset gas into the reaction chamber, and reacting with the phosphorus pollutants on the oxidation machine table in the reaction chamber to change the solid phosphorus pollutants into gaseous state;
and carrying out gas extraction on the gas in the reaction chamber.
2. The method according to claim 1, wherein the predetermined gas is a mixed gas of hydrogen and oxygen;
the step of introducing preset gas into the reaction chamber to react with phosphorus pollutants on an oxidation machine table in the reaction chamber to change the solid phosphorus pollutants into gaseous state comprises the following steps:
introducing the mixed gas of the hydrogen and the oxygen into the reaction chamber;
performing plasma treatment on the mixed gas to generate oxygen ion gas; the oxygen ion gas is used for carrying out chemical reaction with the phosphorus pollutants under preset conditions, so that the solid phosphorus pollutants are changed into gaseous state.
3. The method according to claim 2, characterized in that said preset conditions comprise at least the temperature inside the chamber;
the temperature in the chamber is 600-1100 ℃.
4. The method according to claim 2, characterized in that said preset conditions comprise at least the pressure inside the chamber;
the pressure in the chamber is 1Torr-8 Toor.
5. The method of claim 2, wherein the oxygen ion gas has a gas flow rate of 2slm to 8 slm.
6. The method as claimed in any one of claims 1to 5, wherein before the step of introducing a predetermined gas into the reaction chamber to react with the phosphorus contaminant on the oxidizer in the reaction chamber to change the solid phosphorus contaminant into a gaseous state, the method further comprises:
providing a phosphorus-doped substrate to be processed;
fixing the substrate to be processed on the oxidation machine;
carrying out oxidation treatment on the substrate to be processed; and in the oxidation treatment process, the phosphorus in the substrate to be processed is diffused and further attached to the oxidation machine table to form the phosphorus pollutants.
7. An apparatus for removing phosphorus contaminants, the apparatus comprising:
the gas treatment assembly is used for introducing preset gas into the reaction chamber, and reacting with the phosphorus pollutant on the oxidation machine table in the reaction chamber to change the solid phosphorus pollutant into a gas state;
and the gas extraction assembly is used for extracting gas in the reaction chamber.
8. The apparatus of claim 7, wherein the predetermined gas is a mixed gas of hydrogen and oxygen;
the gas processing assembly is specifically configured to:
introducing the mixed gas of the hydrogen and the oxygen into the reaction chamber;
performing plasma treatment on the mixed gas to generate oxygen ion gas; the oxygen ion gas is used for carrying out chemical reaction with the phosphorus pollutants under preset conditions, so that the solid phosphorus pollutants are changed into gaseous state.
9. The apparatus according to claim 8, wherein the preset conditions comprise at least a temperature inside the chamber;
the temperature in the cavity is 600-1100 ℃;
the device further comprises: a temperature regulating component;
the temperature adjustment assembly is used for adjusting the temperature in the cavity.
10. The device according to claim 8, characterized in that said preset conditions comprise at least the pressure inside the chamber;
the pressure in the chamber is 1Torr-8 Toor;
the device further comprises: a pressure regulating assembly;
the pressure regulating assembly is used for regulating the pressure in the cavity.
11. The apparatus of claim 8, wherein the oxygen ion gas has a gas flow rate of 2slm to 8 slm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110295692.7A CN113066711A (en) | 2021-03-19 | 2021-03-19 | Method and device for removing phosphorus pollutants |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110295692.7A CN113066711A (en) | 2021-03-19 | 2021-03-19 | Method and device for removing phosphorus pollutants |
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| CN113066711A true CN113066711A (en) | 2021-07-02 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999031712A1 (en) * | 1997-12-16 | 1999-06-24 | Applied Materials, Inc. | Ion implanting apparatus and method |
| US20080115808A1 (en) * | 2006-11-20 | 2008-05-22 | Applied Materials, Inc. | In-situ chamber cleaning for an rtp chamber |
| CN101473073A (en) * | 2006-04-26 | 2009-07-01 | 高级技术材料公司 | Cleaning of semiconductor processing systems |
| US20150107618A1 (en) * | 2013-10-21 | 2015-04-23 | Applied Materials, Inc. | Oxygen containing plasma cleaning to remove contamination from electronic device components |
-
2021
- 2021-03-19 CN CN202110295692.7A patent/CN113066711A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999031712A1 (en) * | 1997-12-16 | 1999-06-24 | Applied Materials, Inc. | Ion implanting apparatus and method |
| CN101473073A (en) * | 2006-04-26 | 2009-07-01 | 高级技术材料公司 | Cleaning of semiconductor processing systems |
| US20080115808A1 (en) * | 2006-11-20 | 2008-05-22 | Applied Materials, Inc. | In-situ chamber cleaning for an rtp chamber |
| US20150107618A1 (en) * | 2013-10-21 | 2015-04-23 | Applied Materials, Inc. | Oxygen containing plasma cleaning to remove contamination from electronic device components |
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Application publication date: 20210702 |