CN113063240A - 一种强化辐射制冷领域的复合结构表面 - Google Patents
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Abstract
本发明属于辐射制冷技术领域，提出了一种强化辐射制冷领域的复合结构表面。该表面基于钛‑锗‑钨的材料堆叠顺序，其中对于钛金属需要进行尺寸的设计并制备长、宽和厚度依次为1μm、0.2μm和0.06μm的金属条带分别置于钨衬底和电介质层锗之上，这些金属条带在平行和垂直方向交错分布，相邻且平行的条带间距设置为1μm。中间的锗介质层设置为0.6μm，同时金属钨设置为金属衬底，其厚度设置为2μm。本发明具备制备可行性强、辐射特性突出的特点，该表面能够在大气窗口波段具有较高的光谱发射率，满足辐射制冷的要求。
Description
技术领域
本发明属于辐射制冷技术领域，涉及一种强化辐射制冷领域的复合结构表面。
背景技术
大气对某些特殊波段，如8-13μm区间的电磁波，具有极高的透射性能，使得电磁波能够直接辐射至宇宙空间，故该波段被称为大气窗口。根据大气窗口的热力学应用价值，辐射制冷作为一种被动式的散热方式被提出，其目的是将波长处于8-13μm光谱区间的电磁波强化辐射，并抑制该范围以外电磁波的发射。超材料电磁发射器能够通过微观调控的方式，使表面在大气窗口波段具有高发射率的特性，从而满足辐射制冷的要求。
随着纳米技术的进步，应用于辐射制冷的微纳模型被广泛研究和提出。如文献Wang H,Prasad Sivan V,Mitchell A,Rosengarten G,Phelan P,Wang L.Highlyefficient selective metamaterial absorber for high-temperature solar thermalenergy harvesting.Solar Energy Materials and Solar Cells.2015；137:235-42.提出了Ti-MgF2-W结构的梯形微表面，通过改变Ti金属的几何参数，在可见光波段具有高吸收率，并且在大气窗口区间高发射率的特性，将其应用在太阳能电池表面，可同时满足辐射制冷和光伏发电的功能。同样，文献Liu Q,Wu W,Lin S,Xu H,Lu Y,Song W.Non-taperedmetamaterial emitters for radiative cooling to low temperature limit.OpticsCommunications.2019；450:246-51.中通过在竖直方向上堆叠若干层金属—介质—金属的圆柱形周期性光栅结构，使其在大气窗口波段平均发射率达到了0.8，温度降低55K。这些结构在设计上具有极大的灵活性和创新性，但是整体结构较为复杂，并且对制备精度要求较高，难以大范围普及和应用。另外，学者们提出的模型在理论上依旧存在光谱发射率低、发射带宽窄、光谱选择性差等问题，结合复杂的模型设计，并不利于辐射制冷领域的广泛应用。因此，开发一种结构设计简易、制备难度低，且能够很好地满足大气窗口区间(8-13μm)持续高发射特性的表面显得尤为重要。
发明内容
本发明的目的是为了解决辐射结构表面设计复杂、光谱辐射特性差等问题，提出了一种基于钛-锗-钨的复合结构表面。
本发明技术方案：
一种强化辐射制冷领域的复合结构表面，包括金属钨衬底，半导体锗电介质层和钛金属条，半导体锗电介质层位于金属钨衬底上，钛金属条位于半导体锗电介质层上；
所述的金属钨衬底的厚度L8为2-2.5μm；所述的半导体锗电介质层L7为0.6-0.8μm；所述的钛金属条的长度L3为1-1.2μm，宽度L4为0.2-0.25μm，高度L9为0.06-0.08μm；钛金属条垂直和平行交错分布在半导体锗电介质层上；两平行钛金属条在平行方向的间距L2为1μm，两垂直钛金属条在平行方向距离为L3+2L1为1.8-2μm；两垂直钛金属条在垂直方向的距离L6为1μm，两平行钛金属条在垂直方向距离L3+2L5为1.8-2μm。
本发明的有益效果：把金属钨作为衬底，在其上面涂上薄的半导体锗作为电介质层，在电介质层上面堆叠垂直和平行交错分布的钛金属条。顶层钛金属条在λ＝9.4μm的短波入射情况下，能产生表面产生感应电流，同时在金属钨衬底内部形成感应电流，进而在锗电介质层内部形成闭合回路电流。该现象会激发锗半导体层内部的磁共振，从而对短波具有强烈的束缚作用，强化了金属钨对短波的吸收。而在λ＝12.1μm的长波入射情况下，将会在顶层钛金属条与锗电介质层交界处形成磁场加强，会形成感应电流，将磁场强烈束缚在此交界面上，从而强化顶层钛金属带对于长波的吸收。由此可见，钛-锗-钨的复合结构表面满足在λ＝9.4μm的短波和λ＝12.1μm的长波入射情况下，都具有很高的吸收比，从而强化波长处于8-13μm光谱区间的辐射，并抑制该范围以外电磁波的发射。
有益效果：本发明与现有研究相比具有以下优点：
1、结构模型设计简易，具有一定的制备可行性。
2、采用本发明的方式计算得到钛-锗-钨微纳复合结构表面在大气窗口波段(8-13μm)具有超过0.9的光谱发射率，且光谱带宽较宽无明显缺陷，并在其他中红外波段具有不超过0.2的低发射率。
3、采用这种钛-锗-钨的复合结构，形成了一个完美的电磁发射器，激发了表面等离激元、电偶极子谐振和磁极化共振等效应。
附图说明
图1是本发明提出的超材料复合结构辐射制冷表面3D图。
图2是复合结构表面的平行轴的结构特征。
图3是复合结构表面的垂直轴的结构特征。
具体实施方式
本发明基于50-100℃范围内。考虑热辐射主要集中在近中红外区的特性，提出了一种基于钛-锗-钨的复合结构表面。
所述的金属钨衬底的厚度L8为2-2.5μm，半导体锗电介质层L7为0.6-0.8μm；钛金属条的长度L3为1-1.2μm，宽度L4为0.2-0.25μm，高度L9为0.06-0.08μm；垂直和平行钛金属条交错分布；平行钛金属条在平行方向距离L2为1μm，垂直钛金属条在平行方向距离为L3+2L1为1.8-2μm；垂直钛金属条在垂直方向的距离L6为1μm，平行钛金属条在垂直方向距离L3+2L5为1.8-2μm。
所述钛-锗-钨微纳的复合结构，在不同的入射波长情况下，辐射结构在不同的地方进行强化吸收。在短波入射时，在金属钨衬底内部形成的感应电流与锗电介质层形成闭合回路电流，进而在锗电介质层触发磁共振，强化了在锗-钨交界面对短波的强束缚作用，从而使得短波在金属钨衬底内部迅速吸收。在长波入射时，在顶层交错分布钛金属条与锗电介质层交界面形成感应电流，进而触发磁共振效应。磁共振效应能姜电磁波强烈束缚进钛金属条中，最终转化为热能被消耗，从而强化对长波的吸收。
本发明的具体的工作过程如下：
在短波长处，电磁波将与2μm钨金属衬底内产生耦合作用，激发出表面等离激元，同时也会产生感应电流。并且在0.6μm锗电介质层内部形成闭合的回路电流，从而引起磁共振效应。该磁共振与入射电磁波的磁场分量方向相反，具有强烈的束缚作用，所以在短波入射条件下2μm对单元结构的吸收起主导作用，根据基尔霍夫定律，复合表面对短波的发射能力得到了强化。
在长波长处，顶层钛金属条1μm×0.2μm带在电磁波的影响下会在长轴两端发生了电荷的定向聚集，因此产生了电偶极子共振，这种共振模式激发了感应电流，与0.6μm锗介质层形成了多个闭合回路，导致了磁共振效应，该效应能够将电磁波强烈束缚进结构中，最终转化为热能被消耗，表现出顶层钛金属条1μm×0.2μm带对长波吸收的主导作用，强化了发射能力。另外，矩形对称钛金属条1μm×0.2μm带的排列方式可以表现出对偏振角度、极角的不敏感性，并且针对发射率光谱的缺陷具有很好的弥补作用，是超材料表面在大气窗口区间实现选择性辐射的关键。
以上所述，仅是本发明的较佳实施例，并非对本发明做任何限制，凡是根据本发明技术实质对以上实施例所作的任何简单修改。变更以及等效结构变化，均仍属于本发明技术方案的保护范围内。
Claims (1)
1.一种强化辐射制冷领域的复合结构表面，其特征在于，该强化辐射制冷领域的复合结构表面包括金属钨衬底、半导体锗电介质层和钛金属条，半导体锗电介质层位于金属钨衬底上，钛金属条位于半导体锗电介质层上；
所述的金属钨衬底的厚度L8为2-2.5μm；所述的半导体锗电介质层L7为0.6-0.8μm；所述的钛金属条的长度L3为1-1.2μm，宽度L4为0.2-0.25μm，高度L9为0.06-0.08μm；钛金属条垂直和平行交错分布在半导体锗电介质层上；两平行钛金属条在平行方向的间距L2为1μm，两垂直钛金属条在平行方向距离为L3+2L1为1.8-2μm；两垂直钛金属条在垂直方向的距离L6为1μm，两平行钛金属条在垂直方向距离L3+2L5为1.8-2μm。
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| CN112460837A (zh) * | 2020-12-05 | 2021-03-09 | 中国人民解放军国防科技大学 | 基于dbs算法的二氧化钛选择性吸波器及设计方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112833582A (zh) * | 2021-01-19 | 2021-05-25 | 郑州大学 | 一种实现辐射制冷的二氧化硅热超材料及其应用 |
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