CN113059453A - Polishing equipment - Google Patents
Polishing equipment Download PDFInfo
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- CN113059453A CN113059453A CN201911422782.7A CN201911422782A CN113059453A CN 113059453 A CN113059453 A CN 113059453A CN 201911422782 A CN201911422782 A CN 201911422782A CN 113059453 A CN113059453 A CN 113059453A
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- polishing
- silicon wafer
- feeding
- area
- discharging
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- 238000005498 polishing Methods 0.000 title claims abstract description 224
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 276
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 276
- 239000010703 silicon Substances 0.000 claims abstract description 276
- 230000007246 mechanism Effects 0.000 claims abstract description 274
- 238000004140 cleaning Methods 0.000 claims abstract description 116
- 238000007599 discharging Methods 0.000 claims abstract description 81
- 230000007306 turnover Effects 0.000 claims abstract description 38
- 235000012431 wafers Nutrition 0.000 claims description 262
- 239000000463 material Substances 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 8
- 238000001514 detection method Methods 0.000 description 14
- 238000001035 drying Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 238000005192 partition Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0069—Other grinding machines or devices with means for feeding the work-pieces to the grinding tool, e.g. turntables, transfer means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/007—Cleaning of grinding wheels
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to the technical field of polishing, and discloses polishing equipment which comprises a polishing station and a first switching station, wherein the polishing station comprises a first feeding and discharging area, a first polishing area, a second feeding and discharging area and a second polishing area, a turntable, a polishing disc, polishing heads and a polishing disc cleaning mechanism are arranged on the polishing station, the two polishing heads are respectively arranged at the first polishing area and the second polishing area, the two polishing disc cleaning mechanisms are respectively arranged at the first feeding and discharging area and the second feeding and discharging area, the turntable is provided with four polishing discs, and the turntable can rotate to enable the polishing discs on the turntable to be alternately arranged opposite to the polishing heads and the polishing disc cleaning mechanism. And the first transfer station is provided with a turnover mechanism which can selectively turn over the silicon wafer. The polishing equipment can realize double-sided polishing of the silicon wafer and single-sided rough polishing and fine polishing of the silicon wafer, and has good applicability; through the position of rationally laying out each process equipment, can improve the operating efficiency.
Description
Technical Field
The invention relates to the technical field of polishing, in particular to polishing equipment.
Background
The silicon wafer processing process comprises front cleaning, attaching, polishing, rear cleaning, containing in a box and the like, wherein in the polishing operation of the silicon wafer, according to different polishing requirements, the silicon wafer sometimes needs to be subjected to rough polishing and fine polishing in sequence, and sometimes, two surfaces of the silicon wafer need to be respectively polished only. At present, the existing polishing equipment cannot realize two kinds of polishing operation, and the polishing equipment has the problems of poor applicability and low operation efficiency.
Therefore, a polishing apparatus is urgently needed to solve the above problems.
Disclosure of Invention
The invention aims to provide polishing equipment to solve the problems of poor applicability and low operation efficiency of the polishing equipment in the prior art.
In order to realize the purpose, the following technical scheme is provided:
a polishing apparatus comprising:
the polishing device comprises a polishing station, a first feeding and discharging area, a first polishing area, a second feeding and discharging area and a second polishing area, wherein the first feeding and discharging area, the first polishing area, the second feeding and discharging area and the second polishing area are sequentially arranged;
and the first transfer station is arranged at the downstream of the second feeding and discharging area, and is provided with a turnover mechanism which can selectively turn over the silicon wafers in the second feeding and discharging area.
As a preferred scheme of the polishing equipment, a first blanking mechanism and a first silicon wafer double-sided cleaning mechanism are further arranged on the first transfer station, the first blanking mechanism is used for transferring the silicon wafer in the second feeding and blanking area to the first silicon wafer double-sided cleaning mechanism, and the turnover mechanism can selectively turn over the silicon wafer on the first silicon wafer double-sided cleaning mechanism.
As a preferred scheme of the polishing equipment, a first feeding mechanism and a first silicon wafer thickness measuring mechanism are further arranged on the first transfer station, the turnover mechanism can selectively turn over and transfer the silicon wafer on the first silicon wafer double-side cleaning mechanism to the first silicon wafer thickness measuring mechanism, and the first feeding mechanism is used for transferring the silicon wafer on the first silicon wafer thickness measuring mechanism to the second feeding and discharging area.
As a preferred scheme of the polishing device, the first silicon wafer double-sided cleaning mechanism and the first silicon wafer thickness measuring mechanism are respectively arranged at two sides of a connecting line of the two polishing disc cleaning mechanisms, and the turnover mechanism is arranged between the first silicon wafer double-sided cleaning mechanism and the first silicon wafer thickness measuring mechanism; and/or the first blanking mechanism and the first feeding mechanism are respectively arranged at two sides of a connecting line of the two polishing disc cleaning mechanisms.
As a preferable aspect of the polishing apparatus, the polishing apparatus further comprises:
the feeding and discharging station is provided with a first manipulator, a feeding box and a discharging box;
the second switching station sets up go up the unloading station with between the first unloading district of going up, be provided with transfer device, positioning mechanism and unloading switching device on the second switching station, first manipulator be used for with silicon chip in the loading box shifts to on the positioning mechanism and with silicon chip on the unloading switching device shifts to in the unloading box, the transfer device be used for with silicon chip on the positioning mechanism shifts to first unloading district of going up and will the silicon chip in the first unloading district shifts to unloading switching device.
As a preferable scheme of the polishing device, the transfer device includes a second feeding mechanism and a second discharging mechanism, the second feeding mechanism is configured to transfer the silicon wafers on the positioning mechanism to the first feeding and discharging area, and the second discharging mechanism is configured to transfer the silicon wafers in the first feeding and discharging area to the discharging adapter.
As a preferable scheme of the polishing device, the second feeding mechanism and the second discharging mechanism are respectively arranged at two sides of a connecting line of the two polishing disc cleaning mechanisms; and/or the positioning mechanism and the blanking switching device are respectively arranged at two sides of the connecting line of the two polishing disc cleaning mechanisms.
As the preferred scheme of polishing equipment, unloading switching device includes the two-sided wiper mechanism of second manipulator, second silicon chip and second silicon chip thickness measurement mechanism, second unloading mechanism be used for with the silicon chip in first last unloading district shifts to on the two-sided wiper mechanism of second silicon chip, the second manipulator be used for with the silicon chip on the two-sided wiper mechanism of second silicon chip shifts to second silicon chip thickness measurement mechanism, first manipulator be used for with the silicon chip on the second silicon chip thickness measurement mechanism shifts to in the unloading box.
As a preferable scheme of the polishing device, the second manipulator is arranged between the second silicon wafer double-side cleaning mechanism and the second silicon wafer thickness measuring mechanism.
As a preferred scheme of the polishing equipment, the polishing station is further provided with silicon wafer cleaning mechanisms, the two silicon wafer cleaning mechanisms are respectively arranged in the first polishing area and the second polishing area, and the silicon wafer cleaning mechanisms and the polishing heads are arranged in a one-to-one correspondence manner.
Compared with the prior art, the invention has the beneficial effects that:
the polishing station comprises a first feeding and discharging area, a first polishing area, a second feeding and discharging area and a second polishing area which are sequentially arranged, a turntable, a polishing disc, polishing heads and a polishing disc cleaning mechanism are arranged on the polishing station, the two polishing heads are respectively arranged at the first polishing area and the second polishing area, the two polishing disc cleaning mechanisms are respectively arranged at the first feeding and discharging area and the second feeding and discharging area, the turntable is provided with four polishing discs, and the turntable can rotate so that the polishing discs on the turntable are alternately arranged opposite to the polishing heads and the polishing disc cleaning mechanism. The first transfer station is arranged at the downstream of the second feeding and discharging area, and the first transfer station is provided with a turnover mechanism which can selectively turn over the silicon wafers in the second feeding and discharging area. The polishing equipment can realize double-sided polishing of the silicon wafer and rough polishing and fine polishing of the single side of the silicon wafer, has good applicability, and can improve the operation efficiency by reasonably arranging the positions among the devices in each process.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the contents of the embodiments of the present invention and the drawings without creative efforts.
Fig. 1 is a schematic layout view of a polishing apparatus according to an embodiment of the present invention.
Reference numerals:
100-a first loading and unloading zone; 200-a first polishing zone; 300-a second loading and unloading zone; 400-a second polishing zone;
1-a turntable;
2-a polishing disc;
3-polishing head;
4-a polishing disc cleaning mechanism;
5-turning over mechanism;
6-a first blanking mechanism;
7-a first silicon wafer double-side cleaning mechanism;
8-a first feeding mechanism;
9-a first silicon wafer thickness measuring mechanism;
10-a first manipulator;
11-feeding box;
12-a blanking box;
13-a positioning mechanism;
14-a second feeding mechanism;
15-a second blanking mechanism;
16-a second manipulator;
17-a second silicon wafer double-side cleaning mechanism;
18-a second silicon wafer thickness measuring mechanism;
19-a silicon wafer cleaning mechanism;
20-a first detection camera;
21-second detection camera.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the technical solutions of the present invention are further described below by way of specific embodiments with reference to the accompanying drawings.
In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally laid out when the product is used, and are only for convenience of description of the present invention, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first", "second", and the like are used for descriptive purposes only or to distinguish between different structures or components and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection or a removable connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Fig. 1 is a schematic layout diagram of a polishing apparatus provided in this embodiment, as shown in fig. 1, this embodiment provides a polishing apparatus, which includes a polishing station and a first switching station, the polishing station includes a first loading and unloading area 100, a first polishing area 200, a second loading and unloading area 300, and a second polishing area 400 that are sequentially arranged, a turntable 1, a polishing disk 2, a polishing head 3, and a polishing disk cleaning mechanism 4 are arranged on the polishing station, two polishing heads 3 are respectively arranged at the first polishing area 200 and the second polishing area 400, two polishing disk cleaning mechanisms 4 are respectively arranged at the first loading and unloading area 100 and the second loading and unloading area 300, four polishing disks 2 are arranged on the turntable 1, and the turntable 1 can rotate to enable the polishing disks 2 on the turntable 1 to be alternately arranged opposite to the polishing heads 3 and the polishing disk cleaning mechanisms 4. The first transfer station is arranged at the downstream of the second feeding and discharging area 300, the first transfer station is provided with a turnover mechanism 5, and the turnover mechanism 5 can selectively turn over the silicon wafers in the second feeding and discharging area 300. The polishing equipment can realize two silicon wafer polishing processing modes, namely double-side polishing of the silicon wafer and rough polishing and fine polishing of the single side of the silicon wafer, has good applicability, and can improve the operation efficiency by reasonably arranging the positions among the devices in each process.
Specifically, when the silicon wafer needs to be polished on two sides, the silicon wafer is loaded in the first loading and unloading area 100, one side of the silicon wafer is polished on the first polishing area 200 through the matching of the polishing head 3 and the polishing disk 2, the silicon wafer is turned over on the second loading and unloading area 300 through the turning mechanism 5, the other side of the silicon wafer is polished on the second polishing area 400 through the matching of the polishing head 3 and the polishing disk 2, and finally the silicon wafer is unloaded from the first loading and unloading area 100. When single-side rough polishing and fine polishing are required to be performed on a silicon wafer, firstly, the silicon wafer is loaded in the first loading and unloading area 100, one side of the silicon wafer is roughly polished on the first polishing area 200 through the matching of the polishing head 3 and the polishing disk 2, the silicon wafer is not turned over by the turning mechanism 5 on the second loading and unloading area 300, the same side of the silicon wafer is finely polished on the second polishing area 400 through the matching of the polishing head 3 and the polishing disk 2, and finally, the silicon wafer is unloaded from the first loading and unloading area 100.
Further, a silicon wafer cleaning mechanism 19 is further arranged on the polishing station, the two silicon wafer cleaning mechanisms 19 are respectively arranged in the first polishing area 200 and the second polishing area 400, and the silicon wafer cleaning mechanisms 19 are arranged in one-to-one correspondence with the polishing heads 3. The silicon wafer cleaning mechanism 19 is used for cleaning the silicon wafers at the first polishing zone 200 and the second polishing zone 400, and can clean the polishing head 3 at the same time.
Optionally, a partition plate is arranged on the turntable 1, the two partition plates are vertically arranged, the intersection point of the two partition plates coincides with the central point of the turntable 1, so that the turntable 1 is divided into four areas with equal areas, a polishing disc 2 is arranged in each area of the turntable 1, and when the turntable 1 rotates to the four polishing discs 2, the four polishing discs are respectively arranged opposite to the polishing head 3 and the polishing disc cleaning mechanism 4, the partition plates can just divide the first loading and unloading area 100, the first polishing area 200, the second loading and unloading area 300 and the second polishing area 400, so that mutual interference among different working areas is prevented, and the yield of silicon wafers is improved.
Preferably, the first transfer station is further provided with a first blanking mechanism 6 and a first silicon wafer double-side cleaning mechanism 7, the first blanking mechanism 6 is used for transferring the silicon wafer in the second loading and unloading area 300 to the first silicon wafer double-side cleaning mechanism 7, and the turnover mechanism 5 can selectively turn over the silicon wafer in the first silicon wafer double-side cleaning mechanism 7. The first silicon wafer double-side cleaning mechanism 7 is used for cleaning two sides of a silicon wafer, and the problem of dents on the surface of the silicon wafer can be avoided by cleaning the two sides of the silicon wafer. The turnover mechanism 5 selectively turns over the silicon wafer means that when the silicon wafer needs to be turned over, the turnover mechanism 5 is used for turning over the silicon wafer, and when the silicon wafer does not need to be turned over, the turnover mechanism 5 does not turn over the silicon wafer.
Optionally, the first silicon wafer double-side cleaning mechanism 7 comprises a cleaning jig and a cleaner, the first blanking mechanism 6 transfers the silicon wafer on the second feeding and discharging area 300 to the cleaning jig, the lower portion of the cleaning jig is hollow, and the upper surface and the lower surface of the silicon wafer can be cleaned simultaneously through the cleaner. Preferably, the first wafer double-side cleaning mechanism 7 is also capable of drying the cleaned wafer.
Preferably, the first transfer station is further provided with a first feeding mechanism 8 and a first silicon wafer thickness measuring mechanism 9, the turnover mechanism 5 can selectively turn over and transfer the silicon wafer on the first silicon wafer double-side cleaning mechanism 7 to the first silicon wafer thickness measuring mechanism 9, and the first feeding mechanism 8 is used for transferring the silicon wafer on the first silicon wafer thickness measuring mechanism 9 to the second loading and unloading area 300. Specifically, when two sides of a silicon wafer need to be polished, the turnover mechanism 5 turns over the silicon wafer on the first silicon wafer double-side cleaning mechanism 7 and transfers the silicon wafer to the first silicon wafer thickness measuring mechanism 9; when the silicon wafer needs to be subjected to single-side rough polishing and fine polishing, the turnover mechanism 5 directly transfers the silicon wafer on the first silicon wafer double-side cleaning mechanism 7 to the first silicon wafer thickness measuring mechanism 9 without turning over the silicon wafer.
The first silicon wafer thickness measuring mechanism 9 is used for performing thickness detection on the silicon wafer, so that the polishing head 3 and the polishing disk 2 at the second polishing region 400 perform second polishing on the silicon wafer according to the detection result of the first silicon wafer thickness measuring mechanism 9.
Preferably, the first silicon wafer double-side cleaning mechanism 7 and the first silicon wafer thickness measuring mechanism 9 are respectively arranged at two sides of a connecting line of the two polishing disc cleaning mechanisms 4, and the turnover mechanism 5 is arranged between the first silicon wafer double-side cleaning mechanism 7 and the first silicon wafer thickness measuring mechanism 9, so that the turnover mechanism 5 can turn over and transfer the silicon wafer between the first silicon wafer double-side cleaning mechanism 7 and the first silicon wafer thickness measuring mechanism 9.
Further, the first silicon wafer double-side cleaning mechanism 7 and the first silicon wafer thickness measuring mechanism 9 are symmetrically arranged on two sides of a connecting line of the two polishing disc cleaning mechanisms 4, and the turnover mechanism 5 is arranged on the connecting line of the two polishing disc cleaning mechanisms 4.
Preferably, the first blanking mechanism 6 and the first feeding mechanism 8 are respectively arranged at two sides of a connecting line of the two polishing disk cleaning mechanisms 4. The first blanking mechanism 6 and the first silicon wafer double-sided cleaning mechanism 7 are located on the same side, so that the first blanking mechanism 6 can transfer the silicon wafer on the second loading and unloading area 300 to the first silicon wafer double-sided cleaning mechanism 7. The first feeding mechanism 8 and the first silicon wafer thickness measuring mechanism 9 are located on the same side, so that the first feeding mechanism 8 transfers the silicon wafer on the first silicon wafer thickness measuring mechanism 9 to the second loading and unloading area 300.
Illustratively, the first blanking mechanism 6 and the first loading mechanism 8 are each a suction cup type robot.
Preferably, the polishing equipment further comprises a feeding and discharging station and a second switching station, and the feeding and discharging station and the second switching station are matched to realize feeding of the silicon wafer to be polished and discharging of the polished silicon wafer.
Further, a first manipulator 10, a feeding box 11 and a discharging box 12 are arranged on the feeding and discharging station; the second switching station is arranged between the feeding and discharging station and the first feeding and discharging area 100, a transfer device, a positioning mechanism 13 and a discharging switching device are arranged on the second switching station, the first mechanical hand 10 is used for transferring the silicon wafer in the feeding box 11 to the positioning mechanism 13 and transferring the silicon wafer on the discharging switching device to the discharging box 12, and the transfer device is used for transferring the silicon wafer on the positioning mechanism 13 to the first feeding and discharging area 100 and transferring the silicon wafer in the first feeding and discharging area 100 to the discharging switching device. Specifically, the silicon wafer processing process is roughly as follows: step 1, taking a silicon wafer to be polished out of a feeding box 11 by a first manipulator 10 and placing the silicon wafer on a positioning mechanism 13 for positioning; step 2, transferring the positioned silicon wafer on the positioning mechanism 13 to a polishing disc 2 on the first loading and unloading area 100 by using a transfer device, driving the polishing disc 2 to rotate by using the turntable 1, polishing the first polishing area 200 and the second polishing area 400 by using the polishing disc 2, and returning to the first loading and unloading area 100; 3, transferring the polished silicon wafer at the first feeding and discharging area 100 to a discharging switching device by the transferring device; and 4, finally, transferring the silicon wafers on the blanking adapter device into a blanking box 12 by the first manipulator 10.
Preferably, the transfer device comprises a second feeding mechanism 14 and a second discharging mechanism 15, the second feeding mechanism 14 is used for transferring the silicon wafers on the positioning mechanism 13 to the first feeding and discharging area 100, and the second discharging mechanism 15 is used for transferring the silicon wafers in the first feeding and discharging area 100 to the discharging switching device. The second feeding mechanism 14 and the second discharging mechanism 15 can be operated simultaneously to improve the operation efficiency.
Illustratively, the second feeding mechanism 14 and the second discharging mechanism 15 are respectively arranged on two sides of a connecting line of the two polishing disk cleaning mechanisms 4. Further, the positioning mechanism 13 and the blanking switching device are respectively arranged at two sides of a connecting line of the two polishing disc cleaning mechanisms 4. The second feeding mechanism 14 and the positioning mechanism 13 are located on the same side, and the second discharging mechanism 15 and the discharging switching device are located on the same side, so that the moving distance between the second feeding mechanism 14 and the second discharging mechanism 15 is reduced, and the operating efficiency is improved.
Preferably, the blanking switching device comprises a second manipulator 16, a second silicon wafer double-side cleaning mechanism 17 and a second silicon wafer thickness measuring mechanism 18, the second blanking mechanism 15 is used for transferring the silicon wafer in the first feeding and discharging area 100 to the second silicon wafer double-side cleaning mechanism 17, the second manipulator 16 is used for transferring the silicon wafer on the second silicon wafer double-side cleaning mechanism 17 to the second silicon wafer thickness measuring mechanism 18, and the first manipulator 10 is used for transferring the silicon wafer on the second silicon wafer thickness measuring mechanism 18 to the blanking box 12. In short, the blanking adapter device can perform double-sided cleaning and thickness measurement on the polished silicon wafers so as to transfer qualified silicon wafers into the blanking box 12 and transfer unqualified silicon wafers into a defective area.
Illustratively, the second silicon wafer double-side cleaning mechanism 17 also comprises a cleaning jig and a cleaner, the second blanking mechanism 15 transfers the polished silicon wafer on the second feeding and discharging area 300 onto the cleaning jig, the lower part of the cleaning jig is hollow, and the upper surface and the lower surface of the silicon wafer can be cleaned simultaneously by the cleaner. Preferably, the second wafer double-side cleaning mechanism 17 is also capable of drying the cleaned wafer. Optionally, the second silicon wafer double-side cleaning mechanism 17 and the first silicon wafer double-side cleaning mechanism 7 can be silicon wafer cleaning mechanisms of the same model.
Illustratively, the second silicon wafer thickness measuring mechanism 18 and the first silicon wafer thickness measuring mechanism 9 can be silicon wafer thickness measuring mechanisms of the same model. The silicon wafer thickness measuring mechanism comprises a first position sensor and a second position sensor, wherein the first position sensor is used for detecting the upper surface of a silicon wafer, the second position sensor is used for detecting the lower surface of the silicon wafer, and the difference value between the first position sensor and the second position sensor is the thickness of the silicon wafer.
Further, the second manipulator 16 is arranged between the second silicon wafer double-side cleaning mechanism 17 and the second silicon wafer thickness measuring mechanism 18, so that the moving displacement of the second manipulator 16 can be reduced, and the working efficiency of the second manipulator 16 is improved.
Optionally, the first blanking mechanism 6, the first feeding mechanism 8, the second feeding mechanism 14 and the second blanking mechanism 15 may use the same type of suction cup type manipulator. Of course, in other embodiments, different types of manipulators may be selected according to specific requirements and requirements to be met by the first blanking mechanism 6, the first feeding mechanism 8, the second feeding mechanism 14 and the second blanking mechanism 15.
Preferably, a first detection camera 20 is disposed at the positioning mechanism 13 and is used for detecting whether the positioning mechanism 13 positions the silicon wafer, and after the first detection camera 20 confirms that the silicon wafer on the positioning mechanism 13 is transferred to the first loading and unloading area 100 by the second loading mechanism 14. And a second detection camera 21 is arranged at the second silicon wafer thickness measuring mechanism 18 and used for detecting whether the second silicon wafer thickness measuring mechanism 18 carries out thickness measurement on the silicon wafer, and after the second detection camera 21 confirms the second silicon wafer thickness measuring mechanism, the first manipulator 10 transfers the silicon wafer on the second silicon wafer thickness measuring mechanism 18 to the discharging box 12.
For convenience of understanding, the working process of the polishing apparatus provided in this embodiment is as follows:
firstly, the operation flow of double-sided polishing of the silicon wafer is as follows:
step 1), the first manipulator 10 scans the feeding box 11, after the position information of the silicon wafer in the feeding box 11 is confirmed, the silicon wafer a is taken out of the feeding box 11 in a vacuum chuck mode and conveyed to the positioning mechanism 13, meanwhile, the polishing disk cleaning mechanism 4 at the first feeding and discharging area 100 cleans the polishing disk 2 on the lower side of the first feeding and discharging area, and after the polishing disk 2 is cleaned, the second feeding mechanism 14 conveys the silicon wafer a to the polishing disk 2 at the first feeding and discharging area 100 after the positioning of the positioning mechanism 13 is confirmed by the first detection camera 20.
And 2), rotating the turntable 1 clockwise by 90 degrees, descending the polishing head 3 at the first polishing area 200 to be matched with the polishing disk 2 to polish the silicon wafer A, and cleaning the silicon wafer A by the silicon wafer cleaning mechanism 19 at the position after polishing.
Step 3), repeating the step 1) on the silicon wafer B.
And step 4), the turntable 1 rotates 90 degrees clockwise, the first discharging mechanism 6 conveys the silicon wafer A to the first silicon wafer double-side cleaning mechanism 7 to perform double-side cleaning and spin-drying on the silicon wafer A, the overturning mechanism 5 overturns and conveys the silicon wafer A to the first silicon wafer thickness measuring mechanism 9 to perform thickness measurement after the completion, and the first feeding mechanism 8 conveys the silicon wafer A back to the polishing disc 2 at the second feeding and discharging area 300 after the completion.
Step 5), repeating the step of step 2) on the silicon wafer B, and repeating the step of step 1) on the silicon wafer C.
And 6), rotating the turntable 1 clockwise by 90 degrees, descending the polishing head 3 at the second polishing area 400 according to the detection data of the first silicon wafer thickness measuring mechanism 9 and matching with the polishing disk 2 to polish the other surface of the silicon wafer A, and cleaning the silicon wafer A by the silicon wafer cleaning mechanism 19 at the position after polishing.
Step 7), repeating the step of step 4) on the silicon wafer B, repeating the step of step 2) on the silicon wafer C, and repeating the step of step 1) on the silicon wafer D.
And step 8), the turntable 1 rotates clockwise by 90 degrees, the second blanking mechanism 15 conveys the silicon wafer A to the second silicon wafer double-side cleaning mechanism 17 to perform double-side cleaning and spin-drying on the silicon wafer A, after the double-side cleaning and spin-drying is completed, the second manipulator 16 conveys the silicon wafer A to the second silicon wafer thickness measuring mechanism 18 to perform thickness measurement, and after the double-side cleaning and spin-drying is confirmed by the second detection camera 21, the first manipulator 10 conveys the silicon wafer A to the blanking box 12.
Step 9), repeating the step of step 6) on the silicon wafer B, repeating the step of step 4) on the silicon wafer C, repeating the step of step 2) on the silicon wafer D, and repeating the step of step 1) on the silicon wafer E.
Step 10), and the process is circulated.
Secondly, the operation flow of the silicon wafer single-side rough polishing and the fine polishing comprises the following steps:
step 1), the first manipulator 10 scans the feeding box 11, after the position information of the silicon wafer in the feeding box 11 is confirmed, the silicon wafer a is taken out of the feeding box 11 in a vacuum chuck mode and conveyed to the positioning mechanism 13, meanwhile, the polishing disk cleaning mechanism 4 at the first feeding and discharging area 100 cleans the polishing disk 2 on the lower side of the first feeding and discharging area, and after the polishing disk 2 is cleaned, the second feeding mechanism 14 conveys the silicon wafer a to the polishing disk 2 at the first feeding and discharging area 100 after the positioning of the positioning mechanism 13 is confirmed by the first detection camera 20.
And 2), rotating the turntable 1 clockwise by 90 degrees, descending the polishing head 3 at the first polishing area 200 to be matched with the polishing disk 2 to perform rough polishing on the silicon wafer A, and cleaning the silicon wafer A by the silicon wafer cleaning mechanism 19 at the position after polishing.
Step 3), repeating the step 1) on the silicon wafer B.
And step 4), the turntable 1 rotates 90 degrees clockwise, the first discharging mechanism 6 conveys the silicon wafer A to the first silicon wafer double-side cleaning mechanism 7 to perform double-side cleaning and spin-drying on the silicon wafer A, the turnover mechanism 5 does not turn over the silicon wafer A after the completion and directly conveys the silicon wafer A to the first silicon wafer thickness measuring mechanism 9 to perform thickness measurement, and the first feeding mechanism 8 conveys the silicon wafer A back to the polishing disc 2 at the second feeding and discharging area 300 after the completion.
Step 5), repeating the step of step 2) on the silicon wafer B, and repeating the step of step 1) on the silicon wafer C.
And 6), rotating the turntable 1 clockwise by 90 degrees, descending the polishing head 3 at the second polishing area 400 according to the detection data of the first silicon wafer thickness measuring mechanism 9, matching the polishing head with the polishing disk 2 to perform finish polishing on the same surface of the silicon wafer A, and cleaning the silicon wafer A by the silicon wafer cleaning mechanism 19 at the position after polishing is completed.
Step 7), repeating the step of step 4) on the silicon wafer B, repeating the step of step 2) on the silicon wafer C, and repeating the step of step 1) on the silicon wafer D.
And step 8), the turntable 1 rotates clockwise by 90 degrees, the second blanking mechanism 15 conveys the silicon wafer A to the second silicon wafer double-side cleaning mechanism 17 to perform double-side cleaning and spin-drying on the silicon wafer A, after the double-side cleaning and spin-drying is completed, the second manipulator 16 conveys the silicon wafer A to the second silicon wafer thickness measuring mechanism 18 to perform thickness measurement, and after the double-side cleaning and spin-drying is confirmed by the second detection camera 21, the first manipulator 10 conveys the silicon wafer A to the blanking box 12.
Step 9), repeating the step of step 6) on the silicon wafer B, repeating the step of step 4) on the silicon wafer C, repeating the step of step 2) on the silicon wafer D, and repeating the step of step 1) on the silicon wafer E.
Step 10), and the process is circulated.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A polishing apparatus, characterized by comprising:
the polishing device comprises a polishing station, a first feeding and discharging area (100), a first polishing area (200), a second feeding and discharging area (300) and a second polishing area (400) which are sequentially arranged, wherein a turntable (1), a polishing disc (2), polishing heads (3) and polishing disc cleaning mechanisms (4) are arranged on the polishing station, the two polishing heads (3) are respectively arranged at the first polishing area (200) and the second polishing area (400), the two polishing disc cleaning mechanisms (4) are respectively arranged at the first feeding and discharging area (100) and the second feeding and discharging area (300), the turntable (1) is provided with four polishing discs (2), and the turntable (1) can rotate to enable the polishing discs (2) to be alternately arranged opposite to the polishing heads (3) and the polishing disc cleaning mechanisms (4);
and the first transfer station is arranged at the downstream of the second feeding and discharging area (300), a turnover mechanism (5) is arranged on the first transfer station, and the turnover mechanism (5) can selectively turn over the silicon wafers in the second feeding and discharging area (300).
2. The polishing equipment as recited in claim 1, wherein a first blanking mechanism (6) and a first silicon wafer double-sided cleaning mechanism (7) are further disposed on the first transfer station, the first blanking mechanism (6) is used for transferring the silicon wafers in the second loading and unloading area (300) onto the first silicon wafer double-sided cleaning mechanism (7), and the turnover mechanism (5) can selectively turn over the silicon wafers on the first silicon wafer double-sided cleaning mechanism (7).
3. The polishing equipment as recited in claim 2, wherein a first feeding mechanism (8) and a first silicon wafer thickness measuring mechanism (9) are further disposed on the first transfer station, the turnover mechanism (5) can selectively turn over the silicon wafer on the first silicon wafer double-sided cleaning mechanism (7) and transfer the silicon wafer onto the first silicon wafer thickness measuring mechanism (9), and the first feeding mechanism (8) is configured to transfer the silicon wafer on the first silicon wafer thickness measuring mechanism (9) to the second feeding and discharging area (300).
4. The polishing apparatus according to claim 3, wherein the first silicon wafer double-sided cleaning mechanism (7) and the first silicon wafer thickness measuring mechanism (9) are respectively disposed on both sides of a connecting line of the two polishing disk cleaning mechanisms (4), and the turnover mechanism (5) is disposed between the first silicon wafer double-sided cleaning mechanism (7) and the first silicon wafer thickness measuring mechanism (9); and/or the first blanking mechanism (6) and the first feeding mechanism (8) are respectively arranged at two sides of a connecting line of the two polishing disc cleaning mechanisms (4).
5. The polishing apparatus according to claim 1, further comprising:
the feeding and discharging station is provided with a first manipulator (10), a feeding box (11) and a discharging box (12);
the second switching station sets up go up the unloading station with between first unloading district (100) of going up, be provided with transfer device, positioning mechanism (13) and unloading switching device on the second switching station, first manipulator (10) are used for with silicon chip in material loading box (11) shifts to on positioning mechanism (13) and with silicon chip on the unloading switching device shifts to in material unloading box (12), the transfer device be used for with silicon chip on positioning mechanism (13) shift to first unloading district (100) of going up and will the silicon chip of first unloading district (100) of going up shifts to unloading switching device.
6. The polishing apparatus according to claim 5, wherein the transfer device comprises a second feeding mechanism (14) and a second discharging mechanism (15), the second feeding mechanism (14) is used for transferring the silicon wafers on the positioning mechanism (13) to the first feeding and discharging area (100), and the second discharging mechanism (15) is used for transferring the silicon wafers on the first feeding and discharging area (100) to the discharging switching device.
7. The polishing apparatus according to claim 6, wherein the second feeding mechanism (14) and the second discharging mechanism (15) are respectively provided on both sides of a line connecting the two polishing disk cleaning mechanisms (4); and/or the positioning mechanism (13) and the blanking switching device are respectively arranged at two sides of a connecting line of the two polishing disc cleaning mechanisms (4).
8. The polishing device according to claim 6, wherein the blanking switching device comprises a second manipulator (16), a second silicon wafer double-sided cleaning mechanism (17) and a second silicon wafer thickness measuring mechanism (18), the second blanking mechanism (15) is used for transferring the silicon wafers in the first loading and unloading zone (100) onto the second silicon wafer double-sided cleaning mechanism (17), the second manipulator (16) is used for transferring the silicon wafers on the second silicon wafer double-sided cleaning mechanism (17) onto the second silicon wafer thickness measuring mechanism (18), and the first manipulator (10) is used for transferring the silicon wafers on the second silicon wafer thickness measuring mechanism (18) into the unloading box (12).
9. The polishing apparatus according to claim 8, wherein the second robot (16) is disposed between the second wafer double-side cleaning mechanism (17) and the second wafer thickness measuring mechanism (18).
10. The polishing apparatus according to any one of claims 1 to 9, wherein a silicon wafer cleaning mechanism (19) is further provided at the polishing station, two silicon wafer cleaning mechanisms (19) are respectively provided at the first polishing zone (200) and the second polishing zone (400), and the silicon wafer cleaning mechanisms (19) are provided in one-to-one correspondence with the polishing heads (3).
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| CN201911422782.7A CN113059453B (en) | 2019-12-31 | 2019-12-31 | Polishing equipment |
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| CN201911422782.7A CN113059453B (en) | 2019-12-31 | 2019-12-31 | Polishing equipment |
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| CN113059453B (en) | 2024-06-18 |
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