CN113054443B - Low-frequency wave absorber - Google Patents
Low-frequency wave absorber Download PDFInfo
- Publication number
- CN113054443B CN113054443B CN202110309268.3A CN202110309268A CN113054443B CN 113054443 B CN113054443 B CN 113054443B CN 202110309268 A CN202110309268 A CN 202110309268A CN 113054443 B CN113054443 B CN 113054443B
- Authority
- CN
- China
- Prior art keywords
- resistive film
- wave
- absorbing material
- material layer
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 64
- 239000011358 absorbing material Substances 0.000 claims abstract description 99
- 230000000295 complement effect Effects 0.000 claims abstract description 10
- 238000005452 bending Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 11
- 238000010521 absorption reaction Methods 0.000 description 20
- 238000004088 simulation Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Aerials With Secondary Devices (AREA)
Abstract
The invention discloses a low-frequency wave absorber, which comprises a back plate, a first wave absorbing material layer arranged on the surface of the back plate, a first resistor film pattern arranged on the surface of the first wave absorbing material layer, a second wave absorbing material layer arranged on the surface of the first resistor film pattern and a second resistor film pattern arranged on the surface of the second wave absorbing material layer, wherein the first resistor film pattern and the second resistor film pattern are resistor film patterns with bending structures, and the shapes of the first resistor film pattern and the second resistor film pattern are complementary in the thickness direction. The low-frequency wave absorber can work in the frequency range of 300 MHz-3 GHz, and has good wave absorbing effect.
Description
Technical Field
The invention belongs to the technical field of stealth, and particularly relates to a low-frequency wave absorber.
Background
In recent years, electromagnetic wave absorbing technology has been rapidly developed, and has been widely studied in both military and civilian fields. However, most of the research work of the wave absorber is focused on the frequency range of the fire control radar (namely, 8-18 GHz frequency band), and the research on the low-frequency wave absorber is less. Because the working frequency band of the current remote early warning radar is mainly a P-band, the design and manufacture of the low-frequency wave absorber has important significance for improving the anti-detection capability. At present, a wave absorber capable of working in a frequency band of 300 MHz-3 GHz is needed to further improve the anti-detection capability.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to provide a low-frequency wave absorber which can work in the frequency range of 300 MHz-3 GHz and has a good wave absorbing effect.
The technical scheme adopted by the invention is as follows:
the utility model provides a low frequency wave absorber, includes the backplate, sets up in the first wave absorbing material layer of backplate surface, sets up in the first resistive film pattern of first wave absorbing material layer surface, sets up in the second wave absorbing material layer of first resistive film pattern surface and sets up in the second resistive film pattern of second wave absorbing material layer surface, first resistive film pattern and second resistive film pattern are the resistive film pattern of kink structure, and first resistive film pattern and second resistive film pattern are complementary in shape in the thickness direction.
Preferably, the first resistive film pattern and the second resistive film pattern are both rotationally symmetrical patterns, and the rotation angle is 90 °; the shapes of the back plate, the first wave-absorbing material layer and the second wave-absorbing material layer are square, and the side lengths of the back plate, the first wave-absorbing material layer and the second wave-absorbing material layer are the same.
Preferably, the second resistive film pattern comprises a square resistive film area positioned at the center and four pattern units with the same structure, each corner of the second wave-absorbing material layer corresponds to one pattern unit, and each pattern unit comprises a first resistive film line, a plurality of L-shaped resistive film lines and a second resistive film line extending from one vertex to the edge of the second wave-absorbing material layer from the square resistive film area;
the four pattern units with the same structure are sequentially marked as a first pattern unit, a second pattern unit, a third pattern unit and a fourth pattern unit, wherein two sides of corresponding angles on the second wave-absorbing material layer corresponding to the first pattern unit are respectively a first side and a second side, a second resistance film line of the first pattern unit extends to the first side and is vertical to the first side, and a second resistance film line of the second pattern unit extends to the second side and is vertical to the second side; one side of the L-shaped resistive film line of the first pattern unit is parallel to the second resistive film line of the first pattern unit, and the other side of the L-shaped resistive film line of the first pattern unit is parallel to the second resistive film line of the second pattern unit; the two ends of the first resistive film line of the first pattern unit extend to the second side, the other part of the first resistive film line of the first pattern unit encloses an L-shaped area, one side of the L-shaped area is parallel to the second resistive film line of the first pattern unit, and the other side of the L-shaped area is perpendicular to the second side.
Preferably, the distance between the second resistive film line and the L-shaped resistive film line, the distance between the L-shaped resistive film line and the first resistive film line, and the width of each side of the L-shaped region are the same.
Preferably, the side length of the square resistive film region is 3×w+2×g, where w is the line width of the second resistive film line, the L-shaped resistive film line, and the first resistive film line, and g is the distance between the second resistive film line and the L-shaped resistive film line.
Preferably, the side lengths of the back plate, the first wave-absorbing material layer and the second wave-absorbing material layer are 299.2 +/-23.2 mm, the distance between the second resistance film wire and the L-shaped resistance film wire is 23.9+/-2 mm, the line widths of the second resistance film wire, the L-shaped resistance film wire and the first resistance film wire are 3.3+/-2.1 mm, the thicknesses of the first wave-absorbing material layer and the second wave-absorbing material layer are the same, and the total thickness of the first wave-absorbing material layer and the second wave-absorbing material layer is 3+/-0.2 mm.
Preferably, the line widths w of the second resistive film line, the L-shaped resistive film line and the first resistive film line, the spacing g between the second resistive film line and the L-shaped resistive film line, and the side lengths p of the back plate, the first absorbing material layer and the second absorbing material layer satisfy the following relationship: when the side lengths of the backboard, the first wave absorbing material layer and the second wave absorbing material layer are p multiplied by k, the line widths of the second resistor film line, the L-shaped resistor film line and the first resistor film line are w multiplied by k, the interval between the second resistor film line and the L-shaped resistor film line is g multiplied by k, and the value of k is 0.1-3.
Preferably, the first resistive film pattern and the second resistive film pattern are interchangeable in position.
Preferably, the first absorbing material layer and the second absorbing material layer are made of RMS120 absorbing material.
Preferably, the first resistor film pattern and the second resistor film pattern are made of resistor film materials with square resistance of 100-200Ω, and the backboard is a copper backboard.
The invention has the following beneficial effects:
the low-frequency wave absorber adopts a laminated structure, and the resistive film patterns and the wave absorbing material layers are alternately overlapped to form a lossy circuit, so that circuit resonance is realized, and the energy of part of electromagnetic waves is lost. At the same time, reflection cancellation occurs when electromagnetic waves are incident on the wave absorber of the laminated structure. The first resistor film pattern and the second resistor film pattern adopt bent resistor film patterns, so that impedance matching of the wave absorbing material and free space is improved, and the overall wave absorbing effect is improved. Meanwhile, the electromagnetic wave wavelength of the low frequency band is longer, and the current can resonate only when flowing through the integral multiple of half wavelength, so that the size of the low frequency wave absorber is quite large, but the bending pattern increases the length of the current flowing through path on the premise of not expanding the structural size, the problem of overlarge structural size caused by longer low frequency band wavelength is solved, and the miniaturization and portability of the wave absorber are realized. And, compared with a single pattern, the complementary pattern can better match and absorb waves. The backboard can prevent transmission of electromagnetic waves, and wave absorption efficiency is improved. The low-frequency wave absorber with the structure can work in the frequency range of 300 MHz-3 GHz, and has good wave absorbing effect through the structural design.
Furthermore, the low-frequency absorber can be scaled down or amplified in an equal proportion, the scaling k is 0.1-3, and the low-frequency absorber can still achieve the absorber rate of more than 80 percent under the scaling k.
Drawings
Fig. 1 (a) is a schematic diagram of the overall structure of the low-frequency absorber of the present invention, and fig. 1 (b) is a schematic diagram of the stacked structure of the low-frequency absorber of the present invention;
FIG. 2 is a schematic diagram of a second wave-absorbing material layer and a second resistive film pattern disposed on a surface thereof in an embodiment of the present invention;
FIG. 3 is a schematic view of a first resistive film pattern and a first layer of absorbing material in an embodiment of the present invention;
FIG. 4 is a schematic view of a low frequency absorber back plate of the present invention;
FIG. 5 is a graph showing the simulation result of reflection coefficient of the low-frequency absorber under the normal incidence of TE wave and TM wave;
FIG. 6 is a graph showing simulation results of the absorption rate of the low-frequency absorber under the normal incidence of TE waves and TM waves according to the embodiment of the present invention;
FIG. 7 is a graph showing simulation results of the absorption rate of the low-frequency absorber under the TE oblique incidence of the embodiment of the present invention;
FIG. 8 is a graph showing simulation results of the absorption rate of the low-frequency absorber under the TM oblique incidence of the wave in the embodiment of the invention;
fig. 9 is a graph showing the comparison of the simulation results of the wave absorption ratio of the low-frequency wave absorber and the same-thickness same-size continuous ferrite according to the embodiment of the invention.
In the figure, the 1-back plate, the 2-first absorbing material layer, the 3-first resistive film pattern, the 3-1-fourth resistive film line, the 3-2-fifth resistive film line, the 3-3-sixth resistive film line, the 3-4-seventh resistive film line, the 4-second absorbing material layer, the 4-1-first side, the 4-2-second side, the 5-second resistive film pattern, the 5-1-second resistive film line, the 5-2-first L-shaped resistive film line, the 5-3-second L-shaped resistive film line, the 5-4-first resistive film line, and the 5-5-square resistive film region.
Detailed Description
The invention will be described in detail below with reference to the drawings and the detailed description.
Referring to fig. 1 (a) -4, the low-frequency absorber of the present invention includes a back plate 1, a first absorbing material layer 2 disposed on the surface of the back plate 1, a first resistive film pattern 3 disposed on the surface of the first absorbing material layer 2, a second absorbing material layer 4 disposed on the surface of the first resistive film pattern 3, and a second resistive film pattern 5 disposed on the surface of the second absorbing material layer 4, wherein the first resistive film pattern 3 and the second resistive film pattern 5 are both resistive film patterns having a bent structure, and the shapes of the first resistive film pattern 3 and the second resistive film pattern 5 are complementary in the thickness direction.
As a preferred embodiment of the present invention, the first resistive film pattern 3 and the second resistive film pattern 5 are each a rotationally symmetrical pattern, and the rotation angle is 90 °; the shapes of the back plate 1, the first wave-absorbing material layer 2 and the second wave-absorbing material layer 4 are square, and the side lengths of the back plate 1, the first wave-absorbing material layer 2 and the second wave-absorbing material layer 4 are the same.
As a preferred embodiment of the present invention, the second resistive film pattern 5 includes a square resistive film region 5-5 at the center and four pattern units of the same structure, one pattern unit for each corner of the second wave-absorbing material layer 4, each pattern unit including a first resistive film line 5-4, a plurality of L-shaped resistive film lines, and a second resistive film line 5-1 extending from one vertex of the square resistive film region 5-5 to an edge of the second wave-absorbing material layer 4;
the four pattern units with the same structure are sequentially marked as a first pattern unit, a second pattern unit, a third pattern unit and a fourth pattern unit, wherein two sides of corresponding angles on the second wave-absorbing material layer 4 corresponding to the first pattern unit are a first side 4-1 and a second side 4-2 respectively, a second resistance film line 5-1 of the first pattern unit extends to the first side 4-1 and is perpendicular to the first side 4-1, and a second resistance film line 5-1 of the second pattern unit extends to the second side 4-2 and is perpendicular to the second side 4-2; one side of the L-shaped resistive film line of the first pattern unit is parallel to the second resistive film line 5-1 of the first pattern unit, and the other side of the L-shaped resistive film line of the first pattern unit is parallel to the second resistive film line 5-1 of the second pattern unit; the two ends of the first resistive film line 5-4 of the first pattern unit extend to the second side 4-2, and the rest of the first resistive film line 5-4 of the first pattern unit encloses an L-shaped area, one side of the L-shaped area is parallel to the second resistive film line 5-1 of the first pattern unit, and the other side of the L-shaped area is perpendicular to the second side 4-2.
As a preferred embodiment of the present invention, the distance between the second resistive film line 5-1 and the L-shaped resistive film line, the distance between the L-shaped resistive film line and the first resistive film line 5-4, and the width of each side of the L-shaped region are the same.
As a preferred embodiment of the present invention, the side length of the square resistive film region 5-5 is 3 Xw+2 Xg, where w is the line width of the second resistive film line 5-1, the L-shaped resistive film line, and the first resistive film line 5-4, and g is the distance between the second resistive film line 5-1 and the L-shaped resistive film line.
As a preferred embodiment of the present invention, the side lengths of the back plate 1, the first wave-absorbing material layer 2 and the second wave-absorbing material layer 4 are 299.2 + -23.2 mm, the distance between the second resistive film line 5-1 and the L-shaped resistive film line is 23.9+ -2 mm, the line widths of the second resistive film line 5-1, the L-shaped resistive film line and the first resistive film line 5-4 are 3.3+ -2.1 mm, the thicknesses of the first wave-absorbing material layer 2 and the second wave-absorbing material layer 4 are the same, and the total thickness of the first wave-absorbing material layer 2 and the second wave-absorbing material layer 4 is 3+ -0.2 mm.
As a preferred embodiment of the present invention, the line width w of the second resistive film line 5-1, the L-shaped resistive film line, and the first resistive film line 5-4, the spacing g between the second resistive film line 5-1 and the L-shaped resistive film line, and the side lengths p of the back plate 1, the first wave-absorbing material layer 2, and the second wave-absorbing material layer 4 satisfy the following relationship: when the side lengths of the back plate 1, the first wave absorbing material layer 2 and the second wave absorbing material layer 4 are p multiplied by k, the line widths of the second resistance film line 5-1, the L-shaped resistance film line and the first resistance film line 5-4 are w multiplied by k, and the interval between the second resistance film line 5-1 and the L-shaped resistance film line is g multiplied by k, wherein the value of k is 0.1-3.
As a preferred embodiment of the present invention, the first resistive film pattern 3 and the second resistive film pattern 5 are interchangeable in position.
In a preferred embodiment of the present invention, the first absorbing material layer 2 and the second absorbing material layer 4 are made of RMS120 absorbing material.
As a preferred embodiment of the present invention, the first resistive film pattern 3 and the second resistive film pattern 5 are made of a resistive film material having a sheet resistance of 100 to 200Ω, and the back plate 1 is a copper back plate.
Examples
In order to meet the requirement of low-frequency wave absorption, magnetic wave absorbing materials with high magnetic loss in a low frequency band, such as RMS120 wave absorbing materials, are generally adopted in the design. However, the low-frequency electromagnetic wave has a longer wavelength, and the RMS120 absorbing material needs a thicker thickness to achieve a better absorbing effect, so that it has the disadvantages of high areal density and heavy weight. Therefore, in order to design a low-frequency wave absorber with higher practical application value, a certain structure must be loaded on the substrate of the RMS120 wave absorbing material, so as to achieve the purposes of reducing the size of the wave absorber and increasing the absorption bandwidth while realizing low-frequency wave absorption.
The low-frequency wave absorber provided by the embodiment is a low-frequency wave absorber working at 300 MHz-3 GHz, and the thickness is 3mm. On the basis of the RMS120 wave-absorbing material, two resistance film patterns with complementary shapes are loaded, so that a good impedance matching effect is realized. By feeding the linear resistive film according to a certain ruleThe line is buckled, can reduce the size of overall structure under the prerequisite of not losing the wave absorbing effect. The wave absorber has compact structure, small size and good wave absorbing effect, and solves the problems that the low-frequency wave absorber has oversized size and is too thick. Specifically, the back plate 1 of the low-frequency wave absorber adopts a copper back plate, the first wave absorbing material layer 2 and the second wave absorbing material layer 4 are used as parts for absorbing the loss electromagnetic wave, the material adopts an RMS120 wave absorbing material, and the shapes of the first wave absorbing material layer 2, the second wave absorbing material layer 4 and the back plate are square with the side length of p. The first resistive film pattern 3 and the second resistive film pattern 5 are complementary in shape in the thickness direction, and taking the azimuth shown in fig. 1 (b) as an example, referring to fig. 2 and 3, the first resistive film pattern 3 and the second resistive film pattern 5 are complementary in shape in the thickness direction means that: along the thickness direction, the projection of the first resistive film pattern 3 is embedded in the void (or the blank area) of the second resistive film pattern 5, and the projection of the second resistive film pattern 5 is embedded in the void (or the blank area) of the first resistive film pattern 3. The overall thickness of the low-frequency absorber in this embodiment ishThe thicknesses of the first resistive film pattern 3, the second resistive film pattern 5 and the back plate 1 are very small, and are negligible, so the thicknesses of the first wave-absorbing material layer 2 and the second wave-absorbing material layer 4 of the present embodiment are all. Referring to fig. 2, the film line of the second resistive film pattern 5 is formed by bending a resistive film with a line width w, and the distance between the film lines is g. The second resistive film pattern 5 has a square resistive film with a side length (3×w+2×g), and four peaks of the square resistive film extend out of a second resistive film line 5-1 with a width w, respectively, and the second resistive film line 5-1 extends to the edges of four sides of the whole wave absorber structure. Referring to fig. 3, the first resistive film pattern 3 and the second resistive film pattern 5 are complementary in shape, the film line of the second resistive film pattern 5 is formed by bending a resistive film with a line width g, the distance between the film lines is w, and the center of the pattern is a square gap with a side length of (3×w+2×g). Referring to fig. 1 (a) -3, in this example, two L-shaped resistive film lines are provided in each pattern unit of the second resistive film pattern 5.
In the low-frequency absorber of the present embodiment, the first resistive film pattern 3 and the second resistive film pattern 5 are made of a resistive film material having a sheet resistance of 150Ω. The geometrical parameters are shown in table 1:
TABLE 1
The low-frequency absorber of the embodiment is of a laminated structure, and the resistive film and the RMS120 material are alternately overlapped to form a lossy circuit, so that circuit resonance is realized, and the energy of part of electromagnetic waves is lost. At the same time, reflection cancellation occurs when electromagnetic waves are incident on the wave absorber of the laminated structure. The adoption of the bent resistor film patterns improves the impedance matching of the wave-absorbing material and the free space, and improves the overall wave-absorbing effect. Meanwhile, the electromagnetic wave wavelength of the low frequency band is longer, and the current can resonate only when flowing through the integral multiple of half wavelength, so that the size of the low frequency wave absorber is quite large, but the bending pattern increases the length of the current flowing through the path on the premise of not expanding the structural size, the problem of overlarge structural size caused by the long wavelength of the low frequency band is solved, and the miniaturization and portability of the wave absorber are realized. And, the complementary pattern of shape can match and absorb the wave effect better than single pattern. Copper is used as the back plate, and almost no electromagnetic wave is transmitted.
The working frequency band of the low-frequency wave absorber designed by the embodiment is 300 MHz-3 GHz.
FIG. 5 shows simulation results of reflection coefficients of the low-frequency absorber under normal incidence of TE waves and TM waves, and shows that the reflection coefficients are lower than-7 dB in the frequency band of 300 MHz-3 GHz, and polarization insensitivity is achieved.
FIG. 6 is a graph showing the simulation result of the absorption rate of the low frequency absorber under the normal incidence of TE wave and TM wave, the absorption rate being represented by the formulaAnd (5) calculating to obtain the product. Simulation results show that the wave absorption rate reaches more than 80% in the frequency range of 300 MHz-3 GHz. The low-frequency wave absorber realizes the electromagnetic wave with the frequency of 300 MHz-2 GHzWave absorption of more than 90 percent.
Fig. 7 shows the simulation result of the absorption rate of the low-frequency absorber under TE oblique incidence, and it can be seen that the absorption rate of the low-frequency absorber decreases with increasing incidence angle when TE oblique incidence occurs. When the incident angle is 40 degrees, the highest frequency point capable of realizing 80% wave absorption is reduced from 3GHz to 2.5GHz.
Fig. 8 shows the simulation result of the absorption rate of the low-frequency absorber under TM oblique incidence, and it can be seen that the absorption rate of the higher frequency band increases with the increase of the incident angle when TM oblique incidence occurs. In addition, the low-frequency wave absorber has certain angle stability within the range of 40 degrees, and the wave absorbing rate does not change greatly along with the change of the incident angle.
Fig. 9 shows that the wave absorption rate of the low-frequency wave absorber is higher than that of the RMS120 wave absorbing material in the frequency range of 300 mhz-3 ghz when compared with the wave absorption rate simulation result of the RMS120 wave absorbing material with the same thickness and the same size, and the performance advantage of the wave absorber is more remarkable with the reduction of the frequency. According to calculation, compared with the RMS120 wave-absorbing material with the same side length and thickness, the average wave-absorbing rate of the wave-absorbing body on the frequency band of 300 MHz-3 GHz is improved by about 17.94%. From the above, the low-frequency wave absorber of the embodiment has the advantages of small size, thin thickness, good wave absorbing effect and the like.
After the side length, the line width and the space in the low-frequency wave absorber are enlarged or reduced in equal proportion, the low-frequency wave absorber can still achieve the wave absorption rate of more than 80 percent. Specifically, at this time, the side length, the line width and the pitch of the wave-absorbing material satisfy the following relationship: when the side length of the wave absorbing material is p multiplied by k, the line width and the distance between the film lines are w multiplied by k and g multiplied by k, wherein k takes a value of 0.1-3.
If the low-frequency wave absorber is to be formed into a non-square shape of another size, the low-frequency wave absorber can be realized by splicing a plurality of units.
Claims (9)
1. The low-frequency wave absorber is characterized by comprising a back plate (1), a first wave absorbing material layer (2) arranged on the surface of the back plate (1), a first resistor film pattern (3) arranged on the surface of the first wave absorbing material layer (2), a second wave absorbing material layer (4) arranged on the surface of the first resistor film pattern (3) and a second resistor film pattern (5) arranged on the surface of the second wave absorbing material layer (4), wherein the first resistor film pattern (3) and the second resistor film pattern (5) are resistor film patterns with bending structures, and the shapes of the first resistor film pattern (3) and the second resistor film pattern (5) are complementary in the thickness direction;
the first resistor film pattern (3) and the second resistor film pattern (5) are rotationally symmetrical, and the rotation angle is 90 degrees;
the second resistive film pattern (5) comprises a square resistive film area (5-5) positioned at the center and four pattern units with the same structure, each corner of the second wave-absorbing material layer (4) corresponds to one pattern unit, and each pattern unit comprises a first resistive film line (5-4), a plurality of L-shaped resistive film lines and a second resistive film line (5-1) extending from one vertex to the edge of the second wave-absorbing material layer (4) from the square resistive film area (5-5);
the four pattern units with the same structure are sequentially marked as a first pattern unit, a second pattern unit, a third pattern unit and a fourth pattern unit, wherein two edges of corresponding angles on a second wave-absorbing material layer (4) corresponding to the first pattern unit are a first edge (4-1) and a second edge (4-2) respectively, a second resistance film line (5-1) of the first pattern unit extends to the first edge (4-1) and is perpendicular to the first edge (4-1), and a second resistance film line (5-1) of the second pattern unit extends to the second edge (4-2) and is perpendicular to the second edge (4-2); one side of the L-shaped resistive film line of the first pattern unit is parallel to the second resistive film line (5-1) of the first pattern unit, and the other side of the L-shaped resistive film line of the first pattern unit is parallel to the second resistive film line (5-1) of the second pattern unit; the two ends of the first resistive film line (5-4) of the first pattern unit extend to the second side (4-2), and the rest of the first resistive film line (5-4) of the first pattern unit encloses an L-shaped area, one side of the L-shaped area is parallel to the second resistive film line (5-1) of the first pattern unit, and the other side of the L-shaped area is perpendicular to the second side (4-2).
2. A low frequency wave-absorbing body according to claim 1, characterized in that the shape of the back plate (1), the first wave-absorbing material layer (2) and the second wave-absorbing material layer (4) is square, and that the side lengths of the back plate (1), the first wave-absorbing material layer (2) and the second wave-absorbing material layer (4) are identical.
3. A low frequency absorber according to claim 1, wherein the spacing between the second resistive film line (5-1) and the L-shaped resistive film line, the spacing between the L-shaped resistive film line and the first resistive film line (5-4), and the width of each side of the L-shaped region are the same.
4. A low frequency absorber according to claim 3, wherein the square resistive film region (5-5) has a side length of 3 xw+2 xg, w being the line widths of the second resistive film line (5-1), the L-shaped resistive film line and the first resistive film line (5-4), g being the spacing between the second resistive film line (5-1) and the L-shaped resistive film line.
5. A low frequency wave absorber according to claim 3, characterized in that the side length of the back plate (1), the first wave absorbing material layer (2) and the second wave absorbing material layer (4) is 299.2 ±3.2mm, the distance between the second resistive film line (5-1) and the L-shaped resistive film line is 23.9±2mm, the line width of the second resistive film line (5-1), the L-shaped resistive film line and the first resistive film line (5-4) is 3.3±2.1mm, the thicknesses of the first wave absorbing material layer (2) and the second wave absorbing material layer (4) are the same, and the total thickness of the first wave absorbing material layer (2) and the second wave absorbing material layer (4) is 3±0.2mm.
6. A low-frequency wave-absorbing body according to claim 5, characterized in that the line width w of the second resistive film line (5-1), the L-shaped resistive film line and the first resistive film line (5-4), the spacing g between the second resistive film line (5-1) and the L-shaped resistive film line, and the side length p of the back plate (1), the first wave-absorbing material layer (2) and the second wave-absorbing material layer (4) satisfy the following relationship: when the side lengths of the back plate (1), the first wave absorbing material layer (2) and the second wave absorbing material layer (4) are p multiplied by k, the line widths of the second resistance film line (5-1), the L-shaped resistance film line and the first resistance film line (5-4) are w multiplied by k, and the interval between the second resistance film line (5-1) and the L-shaped resistance film line is g multiplied by k, wherein the value of k is 0.1-3.
7. A low frequency absorber according to any of claims 1-6, wherein the first resistive film pattern (3) and the second resistive film pattern (5) are interchangeable.
8. A low frequency absorber according to claim 7, wherein the first and second layers of absorbing material (2, 4) are of RMS120 absorbing material.
9. The low-frequency wave absorber according to claim 7, wherein the first resistive film pattern (3) and the second resistive film pattern (5) are made of resistive film materials with square resistance of 100-200Ω, and the back plate (1) is a copper back plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110309268.3A CN113054443B (en) | 2021-03-23 | 2021-03-23 | Low-frequency wave absorber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110309268.3A CN113054443B (en) | 2021-03-23 | 2021-03-23 | Low-frequency wave absorber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113054443A CN113054443A (en) | 2021-06-29 |
| CN113054443B true CN113054443B (en) | 2024-02-06 |
Family
ID=76514625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110309268.3A Active CN113054443B (en) | 2021-03-23 | 2021-03-23 | Low-frequency wave absorber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113054443B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114142246B (en) * | 2021-11-24 | 2023-06-23 | 中国人民解放军空军工程大学 | Broadband wide-angle metamaterial wave absorber based on gradual change impedance and preparation method |
| CN114447623B (en) * | 2022-02-25 | 2023-02-24 | 哈尔滨工业大学 | Optical transparent diffuse reflection wave absorber with ultra-wideband microwave absorption and scattering functions |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994024724A1 (en) * | 1993-04-09 | 1994-10-27 | Chomerics, Inc. | Broadband electromagnetic energy absorber |
| CN103700951A (en) * | 2014-01-10 | 2014-04-02 | 中国科学院长春光学精密机械与物理研究所 | Composite media double-layer FSS (Frequency Selective Surface) structure SRR (Split Ring Resonator) metal layer ultra-light and thin wave-absorbing material |
| CN106856263A (en) * | 2015-12-08 | 2017-06-16 | 中国航空工业集团公司雷华电子技术研究所 | A kind of Meta Materials absorbent structure based on electromagnetic wave absorbing material and multilayer resistive film |
| CN107394414A (en) * | 2017-07-18 | 2017-11-24 | 东南大学 | Wave absorbing device based on double-layer magnetic media implementation low-frequency range broadened bandwidth |
| WO2018146651A1 (en) * | 2017-02-10 | 2018-08-16 | Hps - High Performance Structures, Gestão E Engenharia Lda | Thermal multi-layer insulation and radio-frequency absorber blanket |
| CN208173802U (en) * | 2017-06-13 | 2018-11-30 | 武汉科技大学 | A kind of S-band Meta Materials wave absorbing device based on lumped resistance |
| CN108957603A (en) * | 2018-07-17 | 2018-12-07 | 中国科学院光电技术研究所 | A kind of ultra wide band electromagnetic absorber based on propagating wave in multilayer sub-wavelength structure and super structure surface wave principle of reciprocity |
| CN109638448A (en) * | 2018-12-12 | 2019-04-16 | 航天科工武汉磁电有限责任公司 | A kind of metamaterial antenna cover and antenna system |
| CN109862769A (en) * | 2019-01-28 | 2019-06-07 | 深圳市佳晨科技有限公司 | A kind of absorbing material and preparation method thereof of ultra-thin ultra-wide spectrum |
| CN110190407A (en) * | 2019-05-14 | 2019-08-30 | 南京航空航天大学 | A kind of broadband wave absorbing device and broadband wave absorbing device array based on resistive film |
| CN110504553A (en) * | 2019-08-20 | 2019-11-26 | 航天科工武汉磁电有限责任公司 | A kind of multilayer ultra-wide band wave-absorber that electrically lossy material is compound with magnetic material |
| CN111755835A (en) * | 2020-06-19 | 2020-10-09 | 电子科技大学 | Broadband periodic wave absorbing structure based on magnetic substrate |
| CN112020294A (en) * | 2020-08-05 | 2020-12-01 | 深圳市佳晨科技有限公司 | Ultra-wide spectrum wave-absorbing material and preparation method thereof |
| CN212257701U (en) * | 2020-06-18 | 2020-12-29 | 成都佳驰电子科技有限公司 | Dual-band magnetic material wave-absorbing structure |
| CN112448170A (en) * | 2020-11-27 | 2021-03-05 | 中国人民解放军空军工程大学 | P-S frequency band ultra-wideband wave-absorbing super-structure surface and low-scattering system |
-
2021
- 2021-03-23 CN CN202110309268.3A patent/CN113054443B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994024724A1 (en) * | 1993-04-09 | 1994-10-27 | Chomerics, Inc. | Broadband electromagnetic energy absorber |
| CN103700951A (en) * | 2014-01-10 | 2014-04-02 | 中国科学院长春光学精密机械与物理研究所 | Composite media double-layer FSS (Frequency Selective Surface) structure SRR (Split Ring Resonator) metal layer ultra-light and thin wave-absorbing material |
| CN106856263A (en) * | 2015-12-08 | 2017-06-16 | 中国航空工业集团公司雷华电子技术研究所 | A kind of Meta Materials absorbent structure based on electromagnetic wave absorbing material and multilayer resistive film |
| WO2018146651A1 (en) * | 2017-02-10 | 2018-08-16 | Hps - High Performance Structures, Gestão E Engenharia Lda | Thermal multi-layer insulation and radio-frequency absorber blanket |
| CN208173802U (en) * | 2017-06-13 | 2018-11-30 | 武汉科技大学 | A kind of S-band Meta Materials wave absorbing device based on lumped resistance |
| CN107394414A (en) * | 2017-07-18 | 2017-11-24 | 东南大学 | Wave absorbing device based on double-layer magnetic media implementation low-frequency range broadened bandwidth |
| CN108957603A (en) * | 2018-07-17 | 2018-12-07 | 中国科学院光电技术研究所 | A kind of ultra wide band electromagnetic absorber based on propagating wave in multilayer sub-wavelength structure and super structure surface wave principle of reciprocity |
| CN109638448A (en) * | 2018-12-12 | 2019-04-16 | 航天科工武汉磁电有限责任公司 | A kind of metamaterial antenna cover and antenna system |
| CN109862769A (en) * | 2019-01-28 | 2019-06-07 | 深圳市佳晨科技有限公司 | A kind of absorbing material and preparation method thereof of ultra-thin ultra-wide spectrum |
| CN110190407A (en) * | 2019-05-14 | 2019-08-30 | 南京航空航天大学 | A kind of broadband wave absorbing device and broadband wave absorbing device array based on resistive film |
| CN110504553A (en) * | 2019-08-20 | 2019-11-26 | 航天科工武汉磁电有限责任公司 | A kind of multilayer ultra-wide band wave-absorber that electrically lossy material is compound with magnetic material |
| CN212257701U (en) * | 2020-06-18 | 2020-12-29 | 成都佳驰电子科技有限公司 | Dual-band magnetic material wave-absorbing structure |
| CN111755835A (en) * | 2020-06-19 | 2020-10-09 | 电子科技大学 | Broadband periodic wave absorbing structure based on magnetic substrate |
| CN112020294A (en) * | 2020-08-05 | 2020-12-01 | 深圳市佳晨科技有限公司 | Ultra-wide spectrum wave-absorbing material and preparation method thereof |
| CN112448170A (en) * | 2020-11-27 | 2021-03-05 | 中国人民解放军空军工程大学 | P-S frequency band ultra-wideband wave-absorbing super-structure surface and low-scattering system |
Non-Patent Citations (3)
| Title |
|---|
| Thin Electromagnetic Wave Absorber for Quasi-Microwave Band Containing Aligned Thin Magnetic Metal Particles;Morihiko Matsumoto et al.;《IEEE Transactions on Magnetics》;第33卷(第6期);全文 * |
| 一种多层电阻膜加载宽频吸波结构;房新蕊等;《电子技术与软件工程》;全文 * |
| 磁性希波材料低频带宽拓展研究;院伟;《万方学术》;全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113054443A (en) | 2021-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113054443B (en) | Low-frequency wave absorber | |
| CN103700951B (en) | Complex media double-deck FSS structure SRR metal level ultra-thin absorbing material | |
| CN107257035B (en) | Six-frequency-band metamaterial wave absorber insensitive to microwave band polarization | |
| CN110504553A (en) | A kind of multilayer ultra-wide band wave-absorber that electrically lossy material is compound with magnetic material | |
| CN109921192A (en) | A kind of low frequency wave transparent high-frequency wideband inhales the frequency screening device of wave | |
| KR102129386B1 (en) | Ultrawide Bandwidth Electromagnetic Wave Absorbers Using High-Capacitive Spiral Frequency Selective Surfaces | |
| CN105304978A (en) | Low-pass and high-absorption electromagnetic functional layer | |
| CN111048907A (en) | Wave-absorbing and wave-transmitting integrated frequency selection surface with ultra-wide transparent wave band | |
| CN105958212B (en) | Omnidirectional dual-band wave-absorbing material | |
| CN110416742B (en) | Light and thin broadband wave-absorbing metamaterial | |
| CN106299628B (en) | Antenna and wireless router | |
| CN110416735A (en) | Flexible multi-layered frequency-selective surfaces with transmission zero | |
| CN113451784B (en) | High-performance packaging radiation absorber | |
| CN206040983U (en) | Antenna and inhale ripples ware thereof | |
| CN114243310A (en) | Optical transparent broadband wave absorbing body with high wave absorbing rate | |
| CN112864633A (en) | Broadband microwave absorber based on super surface | |
| CN102820545B (en) | Metamaterial frequency choosing surface and antenna system and metamaterial frequency choosing antenna housing made of metamaterial frequency choosing surface | |
| CN110829036B (en) | Ultra-thin ultra-wideband electromagnetic wave absorber | |
| CN113314850B (en) | 2.5D multilayer frequency selective surface | |
| CN111224242B (en) | Wave-absorbing and wave-transmitting integrated frequency selective surface with anisotropic wave-transmitting band | |
| CN110350285B (en) | Artificial local surface plasmon electromagnetic same-frequency resonator | |
| CN116207516A (en) | High-performance metamaterial wave absorber based on three-layer super surface | |
| CN116315730A (en) | Multilayer high-performance ultra-wideband wave absorbing structure | |
| CN111129786A (en) | Electromagnetic wave absorber structure | |
| CN113437531B (en) | Super-miniature angle-insensitive metamaterial wave absorber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |