CN113054125A - Display panel, preparation method thereof and display device - Google Patents
Display panel, preparation method thereof and display device Download PDFInfo
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- CN113054125A CN113054125A CN202110266670.8A CN202110266670A CN113054125A CN 113054125 A CN113054125 A CN 113054125A CN 202110266670 A CN202110266670 A CN 202110266670A CN 113054125 A CN113054125 A CN 113054125A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
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Abstract
The application provides a display panel, a preparation method thereof and a display device. The display panel comprises a thin film transistor layer, an anode layer, an organic functional layer and a cathode layer which are stacked on a substrate; the organic functional layer comprises an electron transport layer, the material of the electron transport layer comprises a combination of metal and metal oxide, and the electron transport layer can absorb ultraviolet rays emitted into the organic functional layer. According to the method, the combined material of metal and metal oxide is introduced into the electron transport layer material in the existing display panel to prepare the electron transport layer with the ultraviolet absorption effect, so that the ultraviolet light is prevented from causing damages such as aging and the like to other film layers of the display panel; meanwhile, the introduction of the combined material of metal and metal oxide can also increase the number of electrons in the material of the electron transport layer, thereby improving the electron injection efficiency in the display panel and the luminous efficiency of the display panel.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel, a preparation method of the display panel and a display device.
Background
An Organic Light Emitting Diode (OLED) is a photoelectric technology for realizing multi-color display by using an Organic semiconductor material to generate reversible color change under current drive. OLED display panels are increasingly used in various high-performance display fields due to their advantages of lightness and thinness, high brightness, low power consumption, wide viewing angle, high response speed, and wide temperature range of use.
However, when the OLED display panel after the Thin-Film Encapsulation (TFE) process is subjected to an illumination reliability test, the OLED display panel may have a phenomenon of poor pixel display, for example, when the OLED display panel is subjected to solar ultraviolet irradiation, the transparent substrate easily absorbs ultraviolet light to yellow the transparent substrate, and the light transmittance of the substrate is reduced, so that color coordinates (CIEx, CIEy) of the OLED display panel are changed; in addition, tiny carbon balls or polymer fragments are generated after the glass and the polymer at the flexible substrate are sintered by ultraviolet light, and the cleanliness of the surface of the transparent substrate is also influenced.
Disclosure of Invention
The application provides a display panel, a preparation method thereof and a display device, which are used for effectively preventing ultraviolet light from damaging display panel devices.
In order to achieve the above effects, the technical solution provided by the present application is as follows:
a display panel, comprising:
a substrate;
the thin film transistor layer is arranged on the substrate;
the anode layer is arranged on one side of the thin film transistor layer far away from the substrate;
the organic functional layer is arranged on one side, far away from the thin film transistor layer, of the anode layer;
the cathode layer is arranged on one side, far away from the anode layer, of the organic functional layer;
the organic functional layer comprises an electron transport layer, the material of the electron transport layer comprises a combination of metal and metal oxide, and the electron transport layer can absorb ultraviolet rays emitted into the organic functional layer.
In the display panel of the application, the organic functional layer comprises a hole injection layer, a hole transport layer, a light emitting layer and a hole blocking layer which are sequentially stacked on the anode layer, wherein the electron transport layer is located on one side of the light emitting layer away from the hole blocking layer.
In the display panel of the present application, the mass percentage of the metal in the material of the electron transport layer is 1% to 5%.
In the display panel of the present application, the metal material is one of chromium, copper, silver, or gold, and the metal oxide material is one of zinc oxide, copper oxide, or titanium oxide.
The application also provides a preparation method of the display panel, which comprises the following steps:
preparing a thin film transistor layer, an anode layer, a hole injection layer, a hole transport layer, a light-emitting layer and a hole blocking layer on a substrate in sequence;
preparing an electron transport layer on the hole blocking layer, wherein the electron transport layer is made of a combination of metal and metal oxide and can absorb ultraviolet rays emitted into the organic functional layer;
preparing a cathode layer and a light coupling-out layer on the electron transport layer;
and performing film packaging to form a packaging layer to obtain the display panel.
In the production method of the present application, the step of producing an electron transport layer on the hole blocking layer includes:
providing evaporation equipment, putting the substrate into the evaporation equipment, and placing a mixed evaporation material of LiQ, chromium-doped zinc oxide and an electron transport material on the hole blocking layer;
and carrying out vacuum evaporation on the mixed evaporation material on the hole blocking layer to form the electron transport layer.
In the production method of the present application, the step of producing an electron transport layer on the hole blocking layer includes:
adding LiQ material into an organic solvent to prepare an organic solvent containing LiQ;
adding a chromium-doped zinc oxide nanorod into the LiQ-containing organic solvent to form an electron transport material;
and spin-coating an electron transport material on the hole blocking layer, and curing to form the electron transport layer.
In the preparation method of the present application, the preparation method of the chromium-doped zinc oxide comprises:
providing a zinc nitrate solution and a sodium hydroxide solution;
doping chromium nitrate into the zinc nitrate solution to obtain a first metal salt solution;
adding the sodium hydroxide solution into the first metal salt solution to obtain a second metal salt solution;
adding hydrochloric acid to the second metal salt solution;
carrying out reflux treatment on the second metal salt solution to obtain a metal precipitate;
and cleaning, heating and cooling the metal precipitate to obtain the chromium-doped zinc oxide.
The present application also provides a display device comprising a display panel as described in any of the above.
The beneficial effect of this application: according to the method, a combined material of metal and metal oxide is introduced into an electron transport layer material in the existing display panel, wherein the metal material is one of chromium, copper, silver or gold, and the metal oxide material is one of zinc oxide, copper oxide or titanium oxide, so that the electron transport layer with an ultraviolet absorption effect is prepared, and the electron transport layer can prevent ultraviolet light from causing damages such as aging and the like to other devices of the display panel; meanwhile, the introduction of the combined material of metal and metal oxide can also increase the number of electrons in the material of the electron transport layer, thereby improving the electron injection efficiency in the display panel and the luminous efficiency of the display panel; in addition, the metal oxide material can also absorb the residual plasma generated by plasma cleaning when the display panel is packaged by a film, so that the reliability of the display panel is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel provided in the present application;
fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure;
fig. 3 is a flowchart illustrating steps of a method for manufacturing a display panel according to an embodiment of the present disclosure;
fig. 4A to 4D are schematic structural diagrams of a display panel provided in an embodiment of the present application in a manufacturing process.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device
The embodiment of the application provides a display panel, a preparation method thereof and a display device. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
In the prior art, when a display panel is subjected to illumination reliability test, due to the irradiation of sunlight ultraviolet rays, the display panel has a phenomenon of poor pixel point display, which is specifically shown in that a transparent substrate absorbs ultraviolet rays to yellow a transparent substrate, and the light transmittance of the substrate is reduced, so that the color coordinates (CIEx and CIEy) of the display panel are changed; in addition, tiny carbon balls or polymer fragments are generated after the glass and the polymer at the flexible substrate are sintered by ultraviolet light, and the cleanliness of the surface of the transparent substrate is also influenced. Based on this, the application provides a display panel, a manufacturing method thereof and a display device, which can solve the above-mentioned defect.
Please refer to fig. 1, a structural diagram of a display panel provided in the present application is shown.
The present application provides a display panel, which includes a substrate 100; a thin-film transistor layer 200 disposed on the substrate 100; an anode layer 300 disposed on a side of the thin film transistor layer 200 away from the substrate 100; an organic functional layer 400 disposed on a side of the anode layer 300 away from the thin-film transistor layer 200; and a cathode layer 500 disposed on a side of the organic functional layer 400 away from the anode layer 300.
The organic functional layer 400 includes an electron transport layer 405, the material of the electron transport layer 405 includes a combination of metal and metal oxide, and the electron transport layer 405 can absorb ultraviolet rays emitted into the organic functional layer 400.
This application is through introducing the combined material of metal and metal oxide in electron transport layer material (ETL) among current display panel, prepares electron transport layer 405 that has the absorption to the ultraviolet ray to it is right to prevent that the ultraviolet ray from causing damage such as ageing to other retes of display panel.
The technical solution of the present application will now be described with reference to specific embodiments.
Example one
Please refer to fig. 2, a schematic structural diagram of a display panel provided in an embodiment of the present application.
The present embodiment provides a display panel, which includes a substrate 100, and a thin film transistor layer 200, an anode layer 300, an organic functional layer 400, a cathode layer 500, a light coupling-out layer 600, and an encapsulation layer 700 stacked on the substrate 100 in sequence.
In this embodiment, the material of the substrate 100 includes, but is not limited to, polyethylene terephthalate, polyimide, a cellulose triacetate film, or other flexible materials, and further, in this embodiment, the substrate 100 is a PI substrate, mainly polyimide, and the PI material can effectively improve the light transmittance of the substrate.
In this embodiment, the thin film transistor layer 200 is disposed on the upper surface of the substrate 100, and the thin film transistor layer 200 sequentially includes an active layer, an insulating layer, a gate electrode, a gate insulating layer, and source/drain electrodes from bottom to top.
It is understood that the thin-film transistor layer 200 includes an active layer, an insulating layer, a gate electrode, a gate insulating layer, and source/drain electrodes for illustration only, and the embodiment is not limited thereto.
In the present embodiment, the material of the anode layer 300 includes, but is not limited to, indium tin oxide and indium zinc oxide.
In this embodiment, the organic functional layer 400 includes a hole injection layer 401, a hole transport layer 402, a light emitting layer 403, a hole blocking layer 404, and an electron transport layer 405, which are sequentially stacked and disposed on the anode layer 300.
In the present embodiment, the material of the hole injection layer 401 includes, but is not limited to, HIL material, the material of the hole transport layer 402 includes, but is not limited to, HTL material, the material of the light emitting layer 403 includes, but is not limited to, EMH material, the material of the hole blocking layer 404 includes, but is not limited to, HBL material, and the material of the electron transport layer 405 includes, but is not limited to, ETL material and LiQ material.
Further, in the present embodiment, the material of the electron transport layer 405 includes a combination of metal and metal oxide, wherein the metal material includes but is not limited to one of chromium, copper, silver or gold, and the material of the metal oxide is one of zinc oxide, copper oxide or titanium oxide.
Specifically, in this embodiment, the material of the electron transport layer 405 includes zinc oxide doped with chromium, where the forbidden band width of zinc oxide is Eg ═ 3.37eV, and it has the advantages of good stability and low cost, and it belongs to an N-type semiconductor, electrons in the valence band can accept energy in ultraviolet rays to make transition and generate a large number of photoexcited carriers, and the ionic radii of chromium and zinc are very close to each other, and it is a dopant suitable for doping into zinc oxide, and chromium doping can reduce the band gap of zinc oxide and increase the photoconductivity of the composite material.
In this embodiment, the mass percentage of the metal in the material of the electron transport layer 405 is 1% to 5%, that is, the mass percentage of the metal chromium in the material of the electron transport layer 405 is 1% to 5%, which is not further limited in this embodiment.
It is to be understood that the material of the electron transport layer 405 includes chromium-doped zinc oxide merely for illustration, and the present embodiment does not limit the kind of the metal and the kind of the metal oxide in the material of the electron transport layer 405.
In this embodiment, a combined material of a metal and a metal oxide is introduced into an electron transport layer material (ETL) in an existing display panel, where the metal material is one of chromium, copper, silver, or gold, and the metal oxide material is one of zinc oxide, copper oxide, or titanium oxide, and further, the electron transport layer material (ETL) includes zinc oxide doped with chromium, so as to prepare an electron transport layer 405 having an absorption effect on ultraviolet rays, and the electron transport layer 405 can prevent ultraviolet rays from causing damages such as aging to other devices of the display panel; meanwhile, the introduction of the combined material of metal and metal oxide can also increase the number of electrons in the electron transport layer material (ETL), thereby improving the electron injection efficiency in the display panel and the luminous efficiency of the display panel.
In this embodiment, the material of the cathode layer 500 includes, but is not limited to, indium tin oxide and indium zinc oxide, the light coupling-out layer 600 is a semiconductor layer including an n-type doped material or a p-type doped material, and the light coupling-out layer 600 is used to increase the light output.
Specifically, in this embodiment, the cathode layer 500 is adopted to cooperate with the light out-coupling layer 600 to increase light output, wherein the cathode layer 500 is made of a transparent material.
In this embodiment, the organic functional layer 400 further includes an electron injection layer (not shown) located on the electron transport layer 405 and away from the hole blocking layer 404, and the electron injection layer is located between the electron transport layer 405 and the cathode layer 500.
In this embodiment, the anode layer 300 is used to generate holes, the holes enter the light emitting layer 403 through the hole injection layer 401 and the hole transport layer 402, the cathode layer 500 is used to generate electrons, the electrons enter the light emitting layer 403 through the electron injection layer and the electron transport layer 405, and the electrons and the holes are combined in the light emitting layer 403 to form excitons, and the excitons excite organic molecules in the light emitting layer to generate light.
In this embodiment, the encapsulation layer 700 is used to encapsulate each layer of the display panel, prevent water, oxygen and the like from entering each layer of the display panel, and ensure reliable operation of the display panel, wherein the encapsulation layer 700 is prepared by a thin film encapsulation method.
In the prior art, plasma usually remains in the preparation process of the encapsulation layer 700, and in this embodiment, a combination material of metal and metal oxide is introduced into the Electron Transport Layer (ETL) material, so that the plasma remaining from plasma cleaning during the thin film encapsulation of the display panel can be absorbed, thereby improving the reliability of the display panel.
Example two
Referring to fig. 3, a flowchart of steps of a method for manufacturing a display panel according to an embodiment of the present disclosure is shown.
The embodiment provides a preparation method of a display panel, which comprises the following steps:
step S10: a thin film transistor layer 200, an anode layer 300, a hole injection layer 401, a hole transport layer 402, a light emitting layer 403, and a hole blocking layer 404 are sequentially prepared on a substrate 100, as shown in fig. 4A.
In this embodiment, the step S10 includes the following steps:
step S11: a substrate 100 is provided, the substrate 100 including but not limited to a glass substrate and a flexible substrate.
Further, in this embodiment, the substrate 100 is a flexible transparent PI substrate, mainly made of polyimide, and the PI material can effectively improve the light transmittance.
Step S12: an active layer, an insulating layer, a gate electrode, a gate insulating layer, and source/drain electrodes are sequentially prepared on the substrate 100.
In this embodiment, the thin film transistor layer 200 is disposed on the upper surface of the substrate 100, and the thin film transistor layer 200 sequentially includes an active layer, an insulating layer, a gate electrode, a gate insulating layer, and source/drain electrodes from bottom to top.
It is understood that the thin-film transistor layer 200 includes an active layer, an insulating layer, a gate electrode, a gate insulating layer, and source/drain electrodes for illustration only, and the embodiment is not limited thereto.
Step S13, preparing an anode layer 300 on the thin-film transistor layer 200, wherein the anode layer 300 is made of materials including, but not limited to, indium tin oxide and indium zinc oxide.
Step S14: providing an evaporation equipment, putting the substrate 100 into the evaporation equipment, sequentially placing a hole injection material (HIL), a hole transport material (HTL), a luminescent material (EMH) and a hole blocking material (HBL) on the thin-film transistor layer 200, performing evaporation, and sequentially forming a hole injection layer 401, a hole transport layer 402, a luminescent layer 403 and a hole blocking layer 404 on the thin-film transistor layer 200.
Step 20: an electron transport layer 405 is prepared on the hole blocking layer 404, the material of the electron transport layer 405 is a combination of metal and metal oxide, and the electron transport layer 405 can absorb ultraviolet rays emitted into the organic functional layer 400, as shown in fig. 4B.
In this embodiment, the electron transport layer 405 is prepared by a method including, but not limited to, vacuum evaporation and spin coating.
In this embodiment, when the preparation method of the electron transport layer 405 is vacuum evaporation, the step S20 includes the following steps:
step 21: an evaporation apparatus is provided, the substrate 100 is placed in the evaporation apparatus, and a mixed evaporation material of LiQ, chromium-doped zinc oxide, and an Electron Transport Material (ETM) is placed on the hole blocking layer 404.
In the mixed evaporation material, the mass ratio of the LiQ, the chromium-doped zinc oxide and the Electron Transport Material (ETM) is 45: 5: 50.
the step S21 includes the steps of:
the step S211: a zinc nitrate solution and a sodium hydroxide solution are provided.
In the step S211, the concentration of the zinc nitrate solution is 0.1mol/L, and the concentration of the sodium hydroxide is 0.1 mol/L.
The step S212: and doping chromium nitrate into the zinc nitrate solution to obtain a first metal salt solution.
In the step S212, after chromium nitrate is doped into the zinc nitrate solution, a mixed solution of the zinc nitrate and the chromium nitrate is obtained, wherein the mass fraction of the chromium nitrate is 1% to 5%, which is not further limited in this embodiment.
The step S213: and adding the sodium hydroxide solution into the first metal salt solution to obtain a second metal salt solution.
The step S214: adding hydrochloric acid into the second metal salt solution, and adjusting the pH value of the second metal salt solution to be 2.
The step S215: and carrying out reflux treatment on the second metal salt solution to obtain a metal precipitate.
The step S215 comprises adding the second metal salt solution into a round-bottom flask, and refluxing for 10 hours to obtain a metal precipitate.
The step S216: and cleaning, heating and cooling the metal precipitate to obtain the chromium-doped zinc oxide.
In the step S216, the heating of the metal precipitate includes: baking at 80 deg.C for 4 hr in vacuum oven.
Step S22: the mixed evaporation material on the hole blocking layer 404 is vacuum evaporated to form the electron transport layer 405.
In this embodiment, when the preparation method of the electron transport layer 405 is spin coating, the step S20 includes the following steps:
step S21: the LiQ material is added to an organic solvent to prepare an organic solvent containing LiQ.
In the step S21, the LiQ is 8-hydroxyquinoline-lithium, the LiQ material is in a powder form, and the mass of the LiQ is 0.1 g; the organic solvent includes but is not limited to chloroform, further, the organic solvent is chloroform, and the volume of the chloroform is 20 ml.
In this example, 0.1g of the LiQ powder was added to 20ml of chloroform at room temperature and 25 ℃, and stirred to be uniformly mixed, thereby forming an organic solvent for LiQ.
It is understood that, in this embodiment, the LiQ material is in a powder form, the mass of the LiQ material is 0.1g, the organic solvent is chloroform, and the volume of the chloroform is 20ml, which are merely used as examples, and the form and mass of the LiQ material and the kind and volume of the organic solvent are related to the process means, and this embodiment is not particularly limited thereto.
Step S22: and adding a chromium-doped zinc oxide nanorod into the LiQ-containing organic solvent to form the electron transport material.
In the step S22, after the chromium-doped zinc oxide nanorods are added into the LiQ-containing organic solvent, the mass fraction of the chromium-doped zinc oxide nanorods is 1% to 10%, which is not further limited in this embodiment.
It is understood that the preparation of the chromium-doped zinc oxide has been described in the above, and the description of this embodiment is omitted here.
Step S23: an electron transport material is spin-coated on the hole blocking layer 404 and cured to form the electron transport layer 405.
In step S23, the curing method of the electron transport material is not particularly limited, and the electron transport layer 405 is LiQ: ZnO-Cr electron transport layer.
Step S30: a cathode layer 500 and a light out-coupling layer 600 are prepared on the electron transport layer 405, as shown in fig. 4C.
In step S30, the cathode layer 500 is made of materials including, but not limited to, indium tin oxide and indium zinc oxide, the light coupling-out layer 600 is a semiconductor layer including n-type doped material or p-type doped material, and the light coupling-out layer 600 is used to increase the light output.
Specifically, in this embodiment, the cathode layer 500 is adopted to cooperate with the light out-coupling layer 600 to increase light output, wherein the cathode layer 500 is made of a transparent material.
Step S40: a thin film encapsulation is performed to form an encapsulation layer 700, and a display panel is manufactured as shown in fig. 4D.
The encapsulation layer 700 is used for encapsulating each layer of the display panel, prevents water, oxygen and the like from entering each layer of the display panel, and ensures reliable operation of the display panel, wherein the encapsulation layer 700 is prepared by a thin film encapsulation method.
In this embodiment, a combined material of metal and metal oxide is introduced into an electron transport layer material (ETL) in an existing display panel to prepare an electron transport layer 405 having an absorption effect on ultraviolet rays, so as to prevent the ultraviolet rays from causing damages such as aging and the like to other film layers of the display panel; meanwhile, the introduction of the combined material of metal and metal oxide can also increase the number of electrons in the electron transport layer material (ETL), thereby improving the electron injection efficiency in the display panel and the luminous efficiency of the display panel; moreover, the combination material of metal and metal oxide is introduced into the electron transport layer material (ETL), and the plasma remained in the packaging layer 700 can be cleaned by plasma when the display panel is packaged by a film, so that the reliability of the display panel is improved.
EXAMPLE III
The present embodiment provides a display device, which includes the display panel of the first embodiment.
The display panel has already been described in detail in the first embodiment, and the description is not repeated here.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The display panel, the manufacturing method thereof, and the display device provided in the embodiments of the present application are described in detail above, and specific examples are applied in the description to explain the principle and the implementation of the present application, and the description of the embodiments above is only used to help understanding the technical solution and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. A display panel, comprising:
a substrate;
the thin film transistor layer is arranged on the substrate;
the anode layer is arranged on one side of the thin film transistor layer far away from the substrate;
the organic functional layer is arranged on one side, far away from the thin film transistor layer, of the anode layer;
the cathode layer is arranged on one side, far away from the anode layer, of the organic functional layer;
the organic functional layer comprises an electron transport layer, the material of the electron transport layer comprises a combination of metal and metal oxide, and the electron transport layer can absorb ultraviolet rays emitted into the organic functional layer.
2. The display panel according to claim 1, wherein the organic functional layer comprises a hole injection layer, a hole transport layer, a light emitting layer, and a hole blocking layer, which are sequentially stacked over the anode layer, and the electron transport layer is located on a side of the hole blocking layer away from the light emitting layer.
3. The display panel according to claim 1, wherein the mass percentage of the metal in the material of the electron transport layer is 1% to 5%.
4. The display panel according to claim 1, wherein the metal material is one of chromium, copper, silver, or gold, and the metal oxide material is one of zinc oxide, copper oxide, or titanium oxide.
5. A method for manufacturing a display panel, comprising:
preparing a thin film transistor layer, an anode layer, a hole injection layer, a hole transport layer, a light-emitting layer and a hole blocking layer on a substrate in sequence;
preparing an electron transport layer on the hole blocking layer, wherein the electron transport layer is made of a combination of metal and metal oxide and can absorb ultraviolet rays emitted into the organic functional layer;
preparing a cathode layer and a light coupling-out layer on the electron transport layer;
and performing film packaging to form a packaging layer to obtain the display panel.
6. The production method according to claim 5, wherein the step of producing an electron transport layer on the hole blocking layer comprises:
providing evaporation equipment, putting the substrate into the evaporation equipment, and placing a mixed evaporation material of LiQ, chromium-doped zinc oxide and an electron transport material on the hole blocking layer;
and carrying out vacuum evaporation on the mixed evaporation material on the hole blocking layer to form the electron transport layer.
7. The production method according to claim 5, wherein the step of producing an electron transport layer on the hole blocking layer comprises:
adding LiQ material into an organic solvent to prepare an organic solvent containing LiQ;
adding a chromium-doped zinc oxide nanorod into the LiQ-containing organic solvent to form an electron transport material;
and spin-coating an electron transport material on the hole blocking layer, and curing to form the electron transport layer.
8. The method of claim 6 or 7, wherein the chromium-doped zinc oxide is prepared by a method comprising:
providing a zinc nitrate solution and a sodium hydroxide solution;
doping chromium nitrate into the zinc nitrate solution to obtain a first metal salt solution;
adding the sodium hydroxide solution into the first metal salt solution to obtain a second metal salt solution;
adding hydrochloric acid to the second metal salt solution;
carrying out reflux treatment on the second metal salt solution to obtain a metal precipitate;
and cleaning, heating and cooling the metal precipitate to obtain the chromium-doped zinc oxide.
9. The method according to claim 8, wherein the first metal salt solution contains 1 to 5 mass% of the chromium nitrate.
10. A display device comprising the display panel according to any one of claims 1 to 4.
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