CN113054044B - Monocrystalline silicon thin-film solar cell with double-layer period unmatched rotating rectangular grating structure - Google Patents
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 62
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 238000010521 absorption reaction Methods 0.000 claims abstract description 33
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 238000009987 spinning Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
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- 230000031700 light absorption Effects 0.000 abstract description 7
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Abstract
The invention discloses a monocrystalline silicon thin-film solar cell with a double-layer period unmatched rotating rectangular grating structure, which comprises an AZO anti-reflection layer, a monocrystalline silicon absorption layer and SiO which are sequentially arranged from top to bottom 2 The solar cell comprises a passivation layer, an Ag back reflection layer, and an upper rotating rectangular grating layer and a lower rotating torque-shaped grating layer which are arranged in the monocrystalline silicon thin film solar cell. According to the monocrystalline silicon thin-film solar cell, the double-layer periodic unmatched rotating rectangular grating structure with the dense upper layer and the sparse lower layer is introduced, so that the light absorption rate is improved, the light reflectivity is reduced, and the light capture effect is improved through various modes such as induced light scattering, light diffraction, an optical waveguide mode and local surface plasmon resonance.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon thin-film solar cells, in particular to a double-layer period unmatched rotating rectangular grating structure for improving the light capturing capability of a solar cell.
Background
In view of the shortage of non-renewable energy, clean energy has once played an indispensable role, and among them, the research of solar cells has been taking an important position in this field. In the photovoltaic market, the light absorption effect of the monocrystalline silicon solar cell is better, but the material cost is higher compared with other solar cells, so that the reduction of the thickness of the monocrystalline silicon active layer is still a research hotspot problem in the industry. Solar cells with active layers having thicknesses comparable to the minority carrier diffusion length generally support few optical waveguide modes, especially in the near infrared region, due to the wider absorption band and indirect bandgap characteristics of c-Si materials, and the lack of resonance results in poor light trapping schemes that couple light into these waveguide modes.
In order to increase resonance and thus enhance light absorption efficiency, researchers have designed various light trapping nanostructures, such as an active layer surface texture structure, an Ag nanoparticle structure, a double-layer pyramid-type structure, a double-layer cosine-type grating structure, and a double-layer period mismatched grating structure. Researches find that the effective propagation path of light can be improved by arranging the grating structure on the upper layer of the absorption layer to induce the incident light to scatter and enter the absorption layer at different angles. On the other hand, in many thin film solar cells, the lower layer of the absorber layer is adjacent to the corresponding metal surface, and the surface region free electrons and photons interact to form electromagnetic modes, i.e., Local Surface Plasmon Resonances (LSPRs).
In the research of the thin-film solar cell, different grating structures are designed to improve the light capture effect, and the optimal structure is obtained through the optimization of a plurality of parameters to achieve higher short-circuit current density, so that the method has important research significance.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a monocrystalline silicon thin-film solar cell with a double-layer period unmatched rotating rectangular grating structure.
In order to solve the technical problem, the invention adopts the following technical scheme:
a monocrystalline silicon thin-film solar cell with a double-layer period unmatched rotating rectangular grating structure is characterized in that: the monocrystalline silicon thin film solar cell comprises an AZO anti-reflection layer, a monocrystalline silicon absorption layer and SiO which are sequentially arranged from top to bottom 2 A passivation layer and an Ag back reflection layer; an upper rotating rectangular grating layer and a lower rotating torque-shaped grating layer are also arranged in the monocrystalline silicon thin film solar cell;
the upward spinning torque-shaped grating layer is formed by rotating a monocrystalline silicon strip with rectangular cross section forming a grating structure around the center thereof by an anticlockwise rotation angle R 1 And the highest rotation point of each monocrystalline silicon strip is flush with the upper surface of the AZO anti-reflection layer;after rotation, the monocrystalline silicon strips are partially embedded in the AZO anti-reflection layer, and partially form an integral structure with the monocrystalline silicon absorption layer and do not exceed the lower surface of the monocrystalline silicon absorption layer;
the downward rotation torque type grating layer is formed by rotating an Ag strip with a rectangular cross section and forming a grating structure around the center thereof by an anticlockwise rotation angle R 2 And obtaining; after rotation, each Ag strip is partially embedded in the monocrystalline silicon absorption layer, does not exceed the upper surface of the monocrystalline silicon absorption layer, and partially penetrates through SiO 2 The passivation layer and the Ag back reflecting layer form an integral structure and do not exceed the lower surface of the Ag back reflecting layer.
Further: the width of the cross section rectangle of the monocrystalline silicon strip is W 1 The height is H, and the grating period of the upper rotating rectangular grating layer is Q 1 Duty ratio of omega dc1 ，W 1 ＝Q 1 ×ω dc1 Thickness T of AZO anti-reflection layer AZO Satisfies formula (1):
the width of the rectangular section of the Ag strip is W 2 The height is H, and the grating period of the lower rotating rectangular grating layer is Q 2 Duty ratio of omega dc2 ，W 2 ＝Q 2 ×ω dc2 ；Q 2 ＝m×Q 1 ，m＞1。
Further: q 1 ＝250-350nm，ω dc1 ＝0.2-0.8，ω dc2 ＝0.2-0.8。
Further, R 1 ＝R 2 0-90 deg. Setting the rotation angles of the upper and lower rotation torque-shaped grating layers to be consistent while keeping the periods mismatched, by optimizing a plurality of parameter values (including Q) 1 、Q 2 、ω dc1 、ω dc2 、H、R 1 And R 2 ) The optimum short-circuit current density J can be obtained sc 。
Further, the overlapping phenomenon of the grating structures, Q, should be prevented during rotation 1 、ω dc1 H satisfies the formula (2) (this is because the present invention employs the upper densityThe lower sparse double-layer grating structure, so only whether the grating structures arranged densely on the upper layer are overlapped or not is considered):
(Q 1 ·ω dc1 ) 2 +H 2 ≤Q 1 2 (2)
further, a single crystal silicon absorption layer, SiO 2 The thicknesses of the passivation layer and the Ag back reflection layer are respectively 300nm, 50nm and 200 nm.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the monocrystalline silicon thin-film solar cell, the double-layer periodic unmatched rotating rectangular grating structure with the dense upper layer and the sparse lower layer is introduced, so that the light absorption rate is improved, the light reflectivity is reduced, and the light capture effect is improved through various modes such as induced light scattering, light diffraction, an optical waveguide mode and local surface plasmon resonance.
2. The solar cell provided by the invention adopts a monocrystalline silicon material, and devices can be prepared by the existing micro-nano processing technology, so that the large-scale integration is facilitated.
3. The solar cell structure further reduces the usage amount of silicon, and makes up the weakness of poor absorption performance through the arrangement of the grating structure, thereby reducing the production cost and avoiding the defect of poor light absorption effect.
Drawings
Fig. 1 is a schematic plane structure diagram of a single crystal silicon thin film solar cell with a double-layer period mismatched rotating rectangular grating structure in the embodiment of the invention, wherein the reference numbers in the diagram are as follows: 1-AZO anti-reflection layer, 2-upward spin torque grating layer, 3-monocrystalline silicon absorption layer, 4-downward spin torque grating layer, 5-SiO 2 A passivation layer and a 6-Ag back reflection layer.
Fig. 2 is a rotation structure diagram of an upward spin torque shaped grating layer of a single crystal silicon thin film solar cell with a double-layer period mismatched rotation rectangular grating structure in an embodiment of the invention.
Fig. 3 is an absorption spectrum (fig. 3(a)) and a reflection spectrum (fig. 3(b)) of a single-crystal silicon thin-film solar cell with a double-layer period mismatched rotating rectangular grating structure under non-biased normal light in the embodiment of the invention.
Fig. 4 is a graph showing absorption enhancement spectra of a single-crystal silicon thin-film solar cell with a double-layer period mismatched rotating rectangular grating structure under TE-polarized light (fig. 4(a)) and TM-polarized light (fig. 4(b)) in the embodiment of the present invention.
Fig. 5 is a graph showing electric field intensity distribution of two absorption enhancement peaks i and ii of a single-crystal silicon thin-film solar cell with a double-layer period mismatched rotating rectangular grating structure under TE polarized light in fig. 4 (a).
Fig. 6 is a graph showing the magnetic field intensity distribution of two absorption enhancement peaks I, II of a single-crystal silicon thin-film solar cell with a double-layer period mismatched rotating rectangular grating structure under TM polarized light in fig. 4(b) according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. The following disclosure is merely exemplary and illustrative of the inventive concept, and those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.
In the following examples, the optical properties of the model were studied by two-dimensional simulation with the commercial software FDTD Solution by calculating the short-circuit current density (J) under Transverse Electric (TE) and Transverse Magnetic (TM) polarized light sc ) The optical properties of the model were observed and analyzed. The short-circuit current density in unpolarized light is set as the average of the short-circuit current densities in TE-and TM-polarized light. For the convenience of calculation and analysis, the absorption enhancement effect of the double-layer period mismatched rotating rectangular grating structure can be realized by the short-circuit current density J sc To evaluate, the formula is shown in formula (3):
where A (λ) is the off-normal absorption spectrum of the cell, s (λ) is the incident spectrum of AM1.5G, c is the speed of light in vacuum, and the calculated wavelength range is set at 300-1100 nm.
Referring to fig. 1, the single crystal silicon thin film solar cell with the double-layer period mismatched rotating rectangular grating structure of the embodiment includes an AZO anti-reflection layer, a single crystal silicon absorption layer (c-Si), and a SiO layer sequentially arranged from top to bottom 2 A passivation layer and an Ag back reflection layer; an upper rotating rectangular grating layer and a lower rotating torque-shaped grating layer are also arranged in the monocrystalline silicon thin film solar cell. Absorption layer of silicon single crystal, SiO 2 The thicknesses of the passivation layer and the Ag back reflection layer are respectively 300nm, 50nm and 200 nm.
The upward spinning torque type grating layer is formed by rotating a monocrystalline silicon strip with rectangular cross section forming a grating structure around the center thereof by an anticlockwise rotation angle R 1 And the highest rotation point of each monocrystalline silicon strip is flush with the upper surface of the AZO anti-reflection layer; after rotation, the monocrystalline silicon strips are partially embedded in the AZO anti-reflection layer, and partially form an integral structure with the monocrystalline silicon absorption layer and do not exceed the lower surface of the monocrystalline silicon absorption layer;
the downward rotation torque type grating layer is formed by rotating an Ag strip with a rectangular cross section and forming a grating structure around the center thereof by a counterclockwise rotation angle R 2 And obtaining; after rotation, each Ag strip is partially embedded in the monocrystalline silicon absorption layer, does not exceed the upper surface of the monocrystalline silicon absorption layer, and partially penetrates through SiO 2 The passivation layer and the Ag back reflecting layer form an integral structure and do not exceed the lower surface of the Ag back reflecting layer.
As shown in FIG. 2, the cross-section of the single crystal silicon strip has a rectangular shape with a width W 1 H is the height, and the grating period of the upward spinning torque-shaped grating layer is Q 1 Duty ratio of omega dc1 ，W 1 ＝Q 1 ×ω dc1 Thickness T of AZO anti-reflection layer AZO Satisfies formula (1):
the width of the cross section rectangle of the Ag strip is W 2 H is the height, and Q is the grating period of the downward rotation torque type grating layer 2 Duty ratio of omega dc2 ，W 2 ＝Q 2 ×ω dc2 ；Q 2 ＝m×Q 1 ，m＞1。
In a specific embodiment, Q is set 1 ＝250-350nm、ω dc1 ＝0.2-0.8、ω dc2 ＝0.2-0.8。
To avoid overlapping of the sides of the grating during rotation, Q 1 、ω dc1 H should satisfy formula (2):
(Q 1 ·ω dc1 ) 2 +H 2 ≤Q 1 2 (2)；
the monocrystalline silicon thin-film solar cell with the double-layer period mismatched rotating rectangular grating structure mainly has the following advantages: the design of the double-layer grating is adopted, the upper layer grating can induce the scattering of light to increase the effective propagation path of incident light, and the design of the lower layer grating can induce the resonance of local surface plasmons. Secondly, a double-layer grating structure design with a dense upper part and a sparse lower part is adopted, and experiments prove that the structure design with unmatched periods can improve the light absorption effect compared with a period matching structure. And thirdly, the design of the rotary grating is adopted, structures such as a rectangular grating, a triangular grating, a cosine type grating and the like are proposed in the past, but the rotary grating structure is not introduced, and the introduction of the rotation angle enlarges the simulation range and is convenient for obtaining better short-circuit current density.
In this embodiment, the optimal parameters of the structure obtained by simulation optimization of a plurality of parameters are: q 1 ＝310nm，m＝2，H＝120nm，R 1 ＝R 2 ＝22°，ω dc1 ＝0.8，ω dc2 0.4. Corresponding short-circuit current density of J sc ＝20.55mA/cm 2 And the short-circuit current density of the flat plate structure with the thickness of the c-Si absorption layer of 300nm is J sc ＝11.12mA/cm 2 Therefore, compared with a flat plate structure, the short-circuit current density of the structure is improved by 84.8%.
Meanwhile, the light capture effect of the double-layer period-mismatched rotary rectangular grating structure is compared by optimizing a plurality of structural models, and the double-layer period-mismatched grating structure has better short-circuit current density compared with other structural models by referring to the following tables 1 and 2.
TABLE 1
TABLE 2
As shown by the absorption spectrum in fig. 3(a), the absorption spectrum (solid black line) of the single-crystal silicon thin-film solar cell of the double-layer period mismatched rotary structure is significantly better than that (broken black line) of the flat-plate structure in the whole band range. It can be found from the reflection spectrum in fig. 3(b) that the reflectance (solid black line) of the single-crystal silicon thin-film solar cell with the double-layer period mismatched rotating structure is significantly lower than the reflectance (dashed black line) of the flat-plate structure. Meanwhile, the light absorption effect is better in the area with lower reflectivity, and the light capture effect enhancement effect of the structure can be found to be obvious.
As shown in FIG. 4, the absorption enhancement spectrum in the near infrared region (750-1100nm) shows that the enhancement effect is evident in the presence of a plurality of bandwidth regions, and two larger peak points I (800nm), II (872nm), I (884nm) and II (1096nm) are respectively selected under TE and TM polarized lights to analyze the absorption enhancement mechanism. Observing the electric field intensity distribution of the two peak points i and ii in fig. 5, respectively, it can be found that the absorption enhancement is mainly due to the optical waveguide mode and the light diffraction. By observing the magnetic field intensity distribution of the two peak points I and II in FIG. 6, it can be found that the absorption enhancement mainly comes from the combined effect of the local surface plasmon resonance and the light diffraction. The optical waveguide mode is dominant under TE polarized light, and the local surface plasmon resonance plays a main role under TM polarized light. Through comparative analysis, the light trapping effect of the cell structure of the embodiment is obviously superior to that of a flat plate structure with the thickness of the c-Si layer being 300nm, and meanwhile, the material of the related layer can be replaced in the practical application process.
The above is a detailed description of the preferred embodiments of the simulation optimization, and it should not be construed that the present invention is limited to these descriptions. For those skilled in the art, it should be understood that the present invention is not limited to the above-described exemplary embodiments, and the various modifications, additions, substitutions, and equivalents may be made without departing from the spirit and scope of the present invention.
Claims (5)
1. The utility model provides a double-deck cycle mismatch rotation rectangle grating structure's monocrystalline silicon thin-film solar cell which characterized in that: the monocrystalline silicon thin film solar cell comprises an AZO anti-reflection layer, a monocrystalline silicon absorption layer and SiO which are sequentially arranged from top to bottom 2 A passivation layer and an Ag back reflection layer; an upper rotating rectangular grating layer and a lower rotating torque-shaped grating layer are also arranged in the monocrystalline silicon thin film solar cell;
the upward spinning torque-shaped grating layer is formed by rotating a monocrystalline silicon strip with rectangular cross section forming a grating structure around the center thereof by an anticlockwise rotation angle R 1 And the highest rotation point of each monocrystalline silicon strip is flush with the upper surface of the AZO anti-reflection layer; after rotation, the monocrystalline silicon strips are partially embedded in the AZO anti-reflection layer, and partially form an integral structure with the monocrystalline silicon absorption layer and do not exceed the lower surface of the monocrystalline silicon absorption layer;
the downward rotation torque type grating layer is formed by rotating an Ag strip with a rectangular cross section and forming a grating structure around the center thereof by an anticlockwise rotation angle R 2 And obtaining; after rotation, each Ag strip is partially embedded in the monocrystalline silicon absorption layer, does not exceed the upper surface of the monocrystalline silicon absorption layer, and partially penetrates through SiO 2 The passivation layer and the Ag back reflecting layer form an integral structure and do not exceed the lower surface of the Ag back reflecting layer;
the width of the cross section rectangle of the monocrystalline silicon strip is W 1 The height is H, and the grating period of the upper rotating rectangular grating layer is Q 1 Duty ratio of omega dc1 ，W 1 ＝Q 1 ×ω dc1 Thickness T of AZO anti-reflection layer AZO Satisfies formula (1):
the width of the rectangular section of the Ag strip is W 2 The height is H, and the grating period of the lower rotating rectangular grating layer is Q 2 Duty ratio of omega dc2 ，W 2 ＝Q 2 ×ω dc2 ；Q 2 ＝m×Q 1 ，m＞1。
2. The single crystal silicon thin film solar cell according to claim 1, wherein: q 1 ＝250-350nm，ω dc1 ＝0.2-0.8，ω dc2 ＝0.2-0.8。
3. The single-crystal silicon thin film solar cell according to claim 1 or 2, wherein Q is 1 、ω dc1 And H satisfies formula (2):
(Q 1 ·ω dc1 ) 2 +H 2 ≤Q 1 2 (2)。
4. the monocrystalline silicon thin-film solar cell according to claim 1 or 2, characterized in that: r 1 ＝R 2 ＝0-90°。
5. The monocrystalline silicon thin-film solar cell according to claim 1 or 2, characterized in that: absorption layer of silicon single crystal, SiO 2 The thicknesses of the passivation layer and the Ag back reflection layer are respectively 300nm, 50nm and 200 nm.
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