CN113039636A - 功率半导体装置 - Google Patents

功率半导体装置 Download PDF

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Publication number
CN113039636A
CN113039636A CN201980074479.4A CN201980074479A CN113039636A CN 113039636 A CN113039636 A CN 113039636A CN 201980074479 A CN201980074479 A CN 201980074479A CN 113039636 A CN113039636 A CN 113039636A
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Prior art keywords
conductor
power semiconductor
semiconductor device
recess
semiconductor element
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CN201980074479.4A
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English (en)
Inventor
岛津博美
金子裕二朗
加藤彻
松下晃
井出英一
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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Publication of CN113039636A publication Critical patent/CN113039636A/zh
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Abstract

本发明的功率半导体装置包括：绝缘基板，该绝缘基板的一个面配置有第一导体层；第一导体，该第一导体经由第一连接材料连接到所述第一导体层；以及半导体元件，该半导体元件经由第一连接材料与所述第一导体连接，在从所述半导体元件的电极面的直角方向看的情况下，所述第一导体具有形成得比所述半导体元件大的周边部，在所述周边部形成有用于使所述第一连接材料的厚度比其他部分厚的第一凹部。

Description

功率半导体装置
技术领域
本发明涉及功率半导体装置，特别涉及应用于对车辆驱动用的电动机进行控制的功率转换装置的功率半导体装置，但也能够应用于铁路、电梯、产业设备、飞机等功率转换装置。
背景技术
在面向混合动力汽车、电动汽车的功率转换装置中，期望一种以缩短充电时间为目的的动作电压高的功率半导体装置。在动作电压高的功率半导体装置中，需要使用绝缘耐压高的陶瓷基板等绝缘构件以作为绝缘构件。作为应用了陶瓷基板作为绝缘材料的功率半导体装置，例如公开了专利文献1。
另一方面，还要求功率转换装置的小型化、冷却性能。例如，如专利文献2所示，公开了两面直接冷却方式的功率半导体装置。
现有技术文献
专利文献
专利文献1：日本专利特开平10-189845号公报
专利文献2：日本专利特开2012-257369号公报
发明内容
发明所要解决的技术问题
在利用焊料等连接材料将导体板连接到陶瓷等绝缘基板的功率半导体装置中，在功率半导体元件反复发热时(反复功率半导体装置的动作、停止的情况)，由于反复向连接材料施加大的应变，因此担心会造成疲劳损坏。
特别是连接导体板和绝缘基板的连接材料，温度上升量大、连接材料的面积大，因此连接材料的应变变大，有可能导致疲劳损坏。
本发明的目的是提供可靠性高的功率半导体装置。
解决技术问题所采用的技术方案
为了解决上述问题，本发明所涉及的功率半导体装置包括：绝缘基板，该绝缘基板的一个面配置有第一导体层；第一导体，该第一导体经由第一连接材料连接到第一导体层；以及半导体元件，该半导体元件经由第二连接材料与第一导体连接。而且，在从半导体元件的电极面的直角方向看的情况下，第一导体具有形成得比半导体元件大的周边部，该周边部形成有用于使第一连接材料的厚度比其他部分厚的第一凹部。
发明效果
根据本发明，能够实现可靠性高的功率半导体装置。上述以外的技术问题、结构以及效果通过以下实施方式的说明来进一步明确。
附图说明
图1是本发明实施方式1所涉及的功率半导体装置的剖视图。
图2是表示焊料应变的比较结果的图。
图3是本发明实施方式1所涉及的功率半导体装置的剖视图。
图4是本发明实施方式2所涉及的功率半导体装置的剖视图。
图5是本发明实施方式3所涉及的功率半导体装置的剖视图。
图6是本发明实施方式4所涉及的功率半导体装置的剖视图。
图7是本发明实施方式5所涉及的功率半导体装置的剖视图。
图8是本发明实施方式6所涉及的功率半导体装置的剖视图。
图9是本发明实施方式7所涉及的功率半导体装置的剖视图。
图10是本发明的其他方式所涉及的功率半导体装置的剖视图。
图11是本发明实施方式1所涉及的功率半导体装置的外观图。
图12是本发明实施方式1所涉及的功率半导体装置的展开立体图。
图13是本发明实施方式1所涉及的功率半导体装置的主视图。
图14是本发明实施方式7所涉及的功率半导体装置的主视图。
图15(a)是表示本发明实施方式所涉及的功率半导体装置的制造工序的图。
图15(b)是表示本发明实施方式所涉及的功率半导体装置的制造工序的图。
图15(c)是表示本发明实施方式所涉及的功率半导体装置的制造工序的图。
图15(d)是表示本发明实施方式所涉及的功率半导体装置的制造工序的图。
图16(a)是表示凹部宽度/凹部深度之比的图。
图16(b)是表示凹部宽度/凹部深度之比与焊料应变的关系的曲线图。
图17是本发明实施方式5所涉及的功率半导体装置的剖视图。
图18是本发明实施方式8所涉及的功率半导体装置的剖视图。
具体实施方式
[实施方式1]
图13是本实施方式所涉及的功率半导体装置的主视图。图12是本发明实施方式1所涉及的功率半导体装置的展开立体图。图1是本发明实施方式1所涉及的功率半导体装置的剖视图。图1表示图12中的A-A'处的剖面的一部分。
以下，参照图1说明本发明所涉及的功率半导体装置的一个实施方式。如图1所示，本实施方式的功率半导体装置中，功率半导体元件1被与各电极各自的电极面相对地配置的第一导体3和第二导体4夹住。功率半导体元件1与第一导体3和第二导体4分别利用连接材料2进行接合。第一导体3和第二导体4例如由铜、铜合金或铝、铝合金等形成，连接材料2由焊料、烧结材料等形成。另外，在图1中示出了第一导体3由单个构件形成的情况，但是也可以接合多个构件来形成。绝缘基板5由绝缘构件5a、第一导体层5b和第二导体层5c构成。第一导体层5b配置在绝缘构件5a的一个面，第二导体层5c配置在另一面。第一导体3的与连接到功率半导体元件1的面相反的面经由连接材料6而与第一导体层5b相连接。第二导体层5c经由连接材料7与散热构件8相连接。在散热构件8的表面上形成散热翅片9。
同样地，第二导体4的与连接到功率半导体元件1的面相反的面经由连接材料6而与第一导体层5b相连接。绝缘基板5中，第一导体层5b配置在绝缘构件5a的一个面上，第二导体层5c配置在另一面上。第二导体层5c经由连接材料7与散热构件8相连接。在散热构件8的表面上形成散热翅片9。绝缘构件5a将从功率半导体元件1产生的热量热传导到散热构件8，优选使用热传导率高且绝缘耐压大的材料。例如，能够使用氧化铝(氧化铝)、氮化铝、氮化硅等陶瓷等。连接材料6和连接材料7由焊料、烧结材料等形成。散热构件8和散热翅片9由具有导电性的构件、例如Cu、Cu合金、Cu-C、Cu-CuO等复合材料或Al、Al合金、AlSiC、Al-C等复合材料形成。如图12所示，端子14连接到第一导体层5b。图11是本发明实施方式1所涉及的功率半导体装置的外观图。如图11所示，除了形成有散热构件8的散热翅片的散热面8a和端子14的一部分以外的部分利用密封树脂10进行密封。
通过以上的结构，能够将功率半导体元件1的发热经由第一导体3和第二导体4热传导到绝缘基板5，并经由散热构件8有效地向外部散热。另外，由于使用绝缘耐压高的陶瓷作为绝缘基板5，因此能够实现动作电压高的功率半导体装置。然而，在利用焊料等连接材料6将陶瓷等绝缘基板5与第一导体3和第二导体4连接的功率半导体装置中，在功率半导体元件1反复发热时(反复功率半导体装置的动作、停止的情况)，由于反复向连接材料6施加大的应变，因此担心会造成疲劳损坏。
在图1所示的功率半导体装置中，焊料等接合界面存在3种。是芯片上下表面的连接材料2、连接第一导体和第二导体与绝缘基板5的连接材料6、以及连接绝缘基板5和散热构件8的连接材料7。在反复功率半导体装置的动作、停止的过程中，连接材料的应变最大、成为疲劳寿命的主要原因是连接材料6。其原因是，虽然连接材料2在功率半导体装置动作时温度的上升大，但由于接触面积小，因此应变小。另外，虽然连接材料7的接触面积大，但是由于被配置在散热构件8的附近，因此温度上升量小，应变小。另一方面，由于连接材料6的温度上升量也大，连接面积也大，因此应变变大，疲劳损坏的可能性变高。因此，在本实施方式中，在第一导体3和第二导体4的与绝缘基板5焊接的面的周边部设凹部3a和凹部4a。
图2是表示在有凹部3a和凹部4a的情况和没有凹部3a和凹部4a的情况下比较将连接材料6设为焊料时的功率半导体元件1发热时的连接材料6的应变而得到的结果的图。在功率半导体装置的有源区域发热的情况下的温度分布中，利用对焊料的疲劳损坏进行支配的相当塑性应变来评价发生该温度分布时的应力。利用连接材料6的第二导体4的端部附近处的应变的最大值进行比较。其结果是，如图2所示，确认出当将未设凹部的结构的焊料的应变设为1时，在设有凹部的情况下焊料的应变能够减少到0.61。这是由于通过设置凹部，连接材料6的端部的连接材料厚度(焊料厚度)增加，因此认为减少了焊料应变。因此，在第一导体3的周边部，连接材料6形成得比其他部分厚，从而能够减少焊料的应变。因此，在本实施方式中，由于能够减少功率半导体元件1反复时发热(功率循环时)的焊料连接材料6的应变，因此提供了一种防止疲劳损坏、可靠性高的功率半导体装置。
这里，焊料的热传导率大于第一导体3、第二导体4。因此，当由焊料构成的连接材料6的厚度变厚时，热阻变大，散热性降低。因此，通过在第一导体3、第二导体4的远离功率半导体元件1的位置设置凹部，从而不会导致芯片发热时的热传导恶化，能够仅在应变变高的第一导体3和第二导体4的端部增加连接材料6的焊料厚度，降低应变。由于凹部以外的焊料的厚度与周边相比相对较薄，因此能够抑制热阻的增加，防止焊料的疲劳损坏，能够实现可靠性高的功率半导体装置。
此外，对于设置上述凹部4a的位置，优选考虑芯片的热量从功率半导体元件1的端部扩散。图3是本发明实施方式1所涉及的功率半导体装置的剖视图。如图3所示，将线4d与线4b之间的角度设为45度，其中，线4d从第二导体4和连接材料2的端部的交叉点4e朝向第二导体4面上外侧，线4b从交叉点4e连接与第二导体4的和绝缘基板5的接合面4c的交叉点4d。此时，优选将凹部4a的位置设在比交叉点4d靠外侧。即，在从半导体元件1的电极面的直角方向看的情况下，凹部4a形成在虚拟线与第一导体3的外周之间，其中，虚拟线是由与半导体元件1的端部相隔相当于第一导体3的厚度的距离的点的集合构成的。由此，能够抑制热阻的恶化，因此能够提供可靠性更高的功率半导体装置。
如上所述，通过使凹部深度变深，从而能够增加焊料厚度，能够降低焊料的应变。此时，优选将凹部宽度设为凹部深度的2倍以上。图16(b)是表示凹部宽度/凹部深度之比与焊料应变的关系的图。评估了使凹部宽度与凹部深度之比产生变化的结构的、功率循环时的焊料应变。各个值表示将在凹部宽度/凹部深度＝1的情况下的焊料应变作为1来标准化后的焊料应变值。如图16(b)所示，在凹部宽度/凹部深度的值为2以下的区域中，焊料的应变随着凹部宽度/凹部深度的值的减小而增加。一般来说，通过增加焊料的厚度，焊料的应变减少，但如果只是使凹部深度变深，则不能充分获得其效果。为了通过凹部形成充分地获得焊料应变的降低效果，优选使凹部宽度/凹部深度的值形成为大于2。因此，在从半导体元件1的电极面的直角方向看凹部3a和凹部4b的形状的情况下，在凹部4a和凹部4b中，在将与半导体元件1的电极面平行的宽度方向的长度定义为W，将深度方向的长度定义为D的情况下，W/D形成得大于2。
这里，在图6所示的单面冷却的功率半导体装置结构的情况下，在芯片发热时在将连接材料6的焊料的应变减少的方向上产生翘曲变形，与此相对，在本实施方式所示的两面冷却结构的功率半导体装置中成为使连接材料6的焊料的应变增加的变形。因此，芯片发热时的焊料应变在本实施方式所示的两面冷却结构中变大。因此，设置在第二导体3中的凹部3a的焊料应变降低效果变大。
另外，在本实施方式中，表示了连接材料为焊料的情况，但也可以是烧结材料等其他连接材料。
[实施方式2]
图4是表示本发明的实施方式2的功率半导体装置的剖视图。在制造功率半导体装置时，根据绝缘基板5和散热构件8的热传导率之差而产生翘曲。由于该翘曲，有可能导致在连接材料7产生应变，连接材料7被损坏。在本实施方式中，如图4所示，在散热构件8的安装绝缘基板5的面8b上设置凹部8d。由此，通过增加连接材料7的端部的连接材料的厚度(焊料厚度)，从而能降低应变，防止连接材料7的损坏。设置凹部8d的位置可以设置在比交叉点8e靠外侧，其中，交叉点8e是从第二导体4的端部到散热材料8的垂线与散热构件的绝缘基板安装面8b的交叉点。此外，设置凹部8d的位置可以设置在比交叉点8c靠外侧，其中，交叉点8c是与功率半导体元件1的端部成45度的线4b与散热构件的绝缘基板安装面8b的交叉点。通过这样的结构，能够提供一种抑制热阻的恶化、可靠性高的功率半导体装置。
[实施方式3]
在实施方式1中，构成为在第一导体3上具备一个半导体元件1，但也可以构成为在第一导体3上具备多个半导体元件1。由此，与排列半导体元件为一个的半导体装置相比，能够减小宽度方向的长度，能够提供更小型化的功率半导体装置。
图5是表示本实施方式的功率半导体装置的剖视图。如图5所示，在本实施方式中，第一导体3和第三导体11分别进行焊接，从而在绝缘基板5的同一面上相邻。同样地，第二导体4和第四导体12焊接到第一导体4。在这样的功率半导体装置中，有可能相邻的导体的连接材料6和连接材料13溢出，而导致桥接。特别是在两面冷却模块的情况下，形成密封树脂10时，由于在高温下从两面进行加压，因此容易产生连接材料6和连接材料13溢出并桥接的问题。
因此，在本实施方式中，在第一导体3、第二导体4、第三导体11、第四导体12的与绝缘基板5的连接面的外周部设置凹部3a、凹部4a、凹部11a以及凹部12a。由此，从中央向外侧压出的焊料流入各凹部中，因此能够防止焊料的溢出。因此，能够防止相邻的导体的连接材料6和连接材料13溢出而桥接，能够提高可靠性、组装性。
[实施方式4]
在图1所示的第一实施方式中，示出了下述两面冷却结构的功率半导体装置的示例，即第一导体3和第二导体4分别通过连接材料2连接到功率半导体元件1的正背面，进一步在其外侧分别通过连接材料6、连接材料7连接有绝缘基板5、散热构件8。然而，如图6所示，也可以是单面冷却结构的功率半导体装置。功率半导体元件1经由连接材料2连接到第二导体4。此外，功率半导体元件1经由连接材料6连接到绝缘基板5的第一导体层5b，绝缘基板5的第二导体层5c连接到散热构件8。这里，在这样的结构的情况下，由于第一导体1和绝缘基板5的热膨胀系数的差变大，因此即使是单面冷却结构的功率半导体装置，也存在连接材料6的应变变大的问题。
因此，在第二导体4的与绝缘基板5焊接的面的周边部设置凹部4a。由此，连接材料6的厚度在第二导体4的周边部比其他部分厚，因此能够降低焊料的应变。此外，由于凹部4a以外的焊料的厚度与周边相比相对较薄，因此不会使热阻增加，能够防止焊料的疲劳损坏，能够实现可靠性高的功率半导体装置。
[实施方式5]
图7是表示本发明的实施方式5的功率半导体装置的剖视图。在图1所示的第一实施方式中，示出了在第一导体3和第二导体4的与绝缘基板5焊接的面的周边部设置的凹部3a和凹部4a的形状是阶梯形状的示例。但是，在凹部3a及凹部4a的形状为阶梯形状的情况下，有可能连接材料6不能埋到阶梯的角部而产生空隙。因此，在本实施方式中，如图7所示，凹部的形状形成为凹部3e和凹部4e那样的锥形形状。即，在从所述半导体元件1的电极面的直角方向看的情况下，凹部3e和凹部4e的深度形成为远离半导体元件1的一侧比接近半导体元件1的一侧要大。
通过使凹部3e和凹部4e为锥形，焊料的厚度在对热传导有影响的内侧变薄，因此与使凹部为阶梯形状的情况相比，对热阻的影响较小。另外，锥形比阶梯形状更容易加工。此外，能够防止在第一导体3和连接材料6之间产生空隙、焊料的密接性降低的情况。
此外，也可如图17所示那样，在从半导体元件1的电极面的直角方向看凹部3e和凹部4e的形状的情况下，在凹部3e和凹部4e中，在将与半导体元件1的电极面平行的宽度方向的长度定义为W，将深度方向的长度定义为D的情况下，W/D形成得大于2。由此，在第一导体3、第二导体4的周边部，连接材料3和连接材料6的焊料的厚度比其他部分厚，因此能够期待能降低焊料的应变的效果。另外，由于凹部以外的焊料的厚度与周边相比相对较薄，因此不会使热阻增加，能够防止焊料的疲劳损坏。除此以外，能够防止在第一导体3和连接材料6之间产生空隙，能够实现可靠性高的功率半导体装置。
[实施方式6]
图8是表示本发明的实施方式5的功率半导体装置的剖视图。在图1所示的第一实施方式中，示出了在第一导体3和第二导体4的与绝缘基板5焊接的面的周边部设置的凹部3a和凹部4a的形状是阶梯形状，并设置在第一导体3、第二导体4的最外周的情况。在本实施方式中，如图8所示，在第一导体3、第二导体4的最外周设有壁3f和壁4f。在该情况下，在第一导体、第二导体的周边部，连接材料6的焊料的厚度比其他部分厚，从而能够减少焊料的应变。此外，由于凹部3a和凹部4a以外的焊料的厚度与周边相比相对较薄，因此不会使热阻增加，能够防止焊料的疲劳损坏，能够实现可靠性高的功率半导体装置。另外，壁3f和壁4f也可以构成为一部分与第一导体层5b的至少一部分接触。由此，能够防止壁3f以及壁4f附近的焊料的扩散，能够防止焊料的溢出。
[实施方式7]
图9是表示本发明的实施方式6的功率半导体装置的剖视图。在图1所示的实施方式中，示出了功率半导体元件1通过一个连接材料2连接到第一导体3和第二导体4的结构，但是，如图9所示，本实施方式也能应用于多个芯片并行驱动的功率半导体装置。具体而言，构成为两个以上的功率半导体元件1经由连接材料2连接到第一导体3和第二导体4。由此，能够缩小横向的宽度，因此能够实现功率半导体装置的小型化。在本实施例中，在第二导体4的与绝缘基板5焊接的面的周边部设置有凹部4a。由此，在第二导体4的周边部，连接材料6的厚度比其他部分厚，因此能够降低焊料的应变。另外，由于凹部以外的焊料的厚度与周边相比相对较薄，因此不会使热阻增加，能够防止焊料的疲劳损坏，能够实现可靠性高的功率半导体装置。
如本实施方式那样，在多个功率半导体元件1连接到第一导体3和第二导体4的情况下，与功率半导体元件1为单数的情况相比，连接材料6的表面积变大。因此，由于第一导体3和第二导体4的周边部的连接材料6的应变变大，因此能够进一步期待通过设置凹部3a和4a来降低焊料应变的效果。另外，通过设多个功率半导体元件1，从而能够分散热源，降低热阻。即使在将设置在第一导体3和第二导体4的周边部的凹部3a和凹部4a形成在离芯片端部近的位置的情况下，受到热阻影响的也仅是最外侧的芯片。因此，与功率半导体元件1仅为一个的情况相比，能够抑制由于设置凹部而引起的热阻的增加。
[实施方式8]
使用图18说明本发明所涉及的实施方式8。图18是本发明实施方式8所涉及的功率半导体装置的剖视图。如图18所示，在本实施例中，也可以是在第二导体层5c直接设置散热翅片9的结构。在该情况下，散热翅片9通过电弧焊接等接合到第二导体层5c。由此，能够小型化、减少元器件个数。
[实施方式9]
使用图1和图15说明本发明的一个实施方式所涉及的功率半导体装置的制造方法。图15(a)至15(d)是示出了本发明的一个实施方式所涉及的功率半导体装置的制造工序的图。
首先，如图15(a)所示，在第一导体3和第二导体4中设置凹部3a、4a。凹部3a和凹部4a例如通过拔出等形成。图14是本发明的实施方式所涉及的功率半导体装置的主视图。如图14所示，通过沿着拔出方向设置凹部3a和凹部4a，从而能够通过拔出而进行凹部的成型，提高制造性。
接下来，如图16(b)所示，半导体元件1经由连接材料2连接到第一导体3和第二导体4。第一导体3和第二导体4例如由铜、铜合金或铝、铝合金等形成。连接材料2由焊料或烧结材料等形成。
接下来，如图15(c)所示，第一导体3和第二导体4经由连接材料6连接到绝缘基板5的第一导体层5b。绝缘基板5中，第一导体层5b配置在绝缘构件5a的一个面上，第二导体层5c配置在另一面上。另外，可以将两面的绝缘基板5同时地连接到第一导体3和第二导体4。这样，能够保持对称性，能够抑制组装时的翘曲变形。
接下来，如图15(d)所示，散热构件8经由连接材料7连接到绝缘基板5。此时，也可以同时连接两面的散热构件8。由此，能够抑制组装时的翘曲变形。在散热构件8的表面上形成有散热翅片9。
最后，如图1所示，除了形成散热构件8的散热翅片的散热面8a以外的部分利用密封树脂10进行密封。
在上述实施方式中，散热构件8的散热翅片9的形状设为针形翅片，但也可以是其他形状，例如平直翅片、波纹翅片。另外，在上述实施方式中，示出了密封树脂10包含散热构件8并将散热面8a以外密封的示例，但也可以如表示本发明的另一方式的功率半导体装置的剖视图即图10所示那样，是树脂密封到绝缘基板5为止的结构。在该情况下，如果绝缘基板5的第二导体层5c与散热构件8连接，则能获得同样的效果。另外，如果连接材料6的厚度增加过多，树脂密封时树脂的粘接性会恶化，有可能导致树脂剥落。因此，构成为具备密封构件，该密封构件对绝缘基板5、第一导体3和半导体元件1进行密封，凹部3a、4a的深度形成为比沿着该深度方向的第一导体3的侧面的长度小。由此，能够防止树脂的粘接性的恶化。
另外，在上述实施方式中，以搭载在电动汽车或混合动力汽车上的车载用功率半导体装置为例进行了说明，但只要是导体通过连接材料连接到功率半导体元件1上、进而连接到绝缘基板并在与接合了导体的面不同的面上具有散热部(面)的功率半导体装置，就能够同样地应用本发明。
另外，本发明不限于上述实施方式，可以在本发明的宗旨范围内进行各种变形并应用。
标号说明
1 功率半导体元件
2 连接材料
3 第一导体
3a 凹部
3f 壁
4 第二导体
4a 凹部
4b 45度的线
4c 第二导体的与绝缘基板5的接合面
4d 交叉点
4e 凹部
4f 壁
5 绝缘基板
5a 绝缘构件
5b 第一导体层
5c 第二导体层
6 连接材料
7 连接材料
8 散热构件
8a 散热面
9 散热翅片
10 密封树脂
11 第三导体
11a 凹部
12 第四导体
12a 凹部
13 连接材料
14 端子。

Claims (15)

1.一种功率半导体装置，其特征在于，包括：
第一绝缘基板，该第一绝缘基板的一个面配置有第一导体层；
第一导体，该第一导体经由第一连接材料连接到所述第一导体层；以及
半导体元件，该半导体元件经由第二连接材料与所述第一导体连接，
在从所述半导体元件的电极面的直角方向看的情况下，
所述第一导体具有形成得比所述半导体元件大的周边部，
在所述周边部形成有用于使所述第一连接材料的厚度比其他部分厚的第一凹部。
2.如权利要求1所述的功率半导体装置，其特征在于，包括：
第二导体，该第二导体经由第四连接材料连接到所述半导体元件的与连接有所述第一导体的面相反的面；以及
第二绝缘基板，该第二绝缘基板的一个面配置有第三导体层；
在从所述半导体元件的电极面的直角方向看的情况下，
所述第二导体具有形成得比所述半导体元件大的周边部，
在所述周边部形成有用于使所述第五连接材料的厚度比其他部分厚的第二凹部。
3.如权利要求1或2所述的功率半导体装置，其特征在于，
在从所述半导体元件的电极面的直角方向看的情况下，
所述第一凹部的深度在远离所述半导体元件的一侧比接近所述半导体元件的一侧要大。
4.如权利要求1至3中任一项所述的功率半导体装置，其特征在于，
在从所述半导体元件的电极面的直角方向看的情况下，
在所述第一凹部，在将与所述电极面平行的宽度方向的长度定义为W，将深度方向的长度定义为D的情况下，W/D为2以上。
5.如权利要求1至4中任一项所述的功率半导体装置，其特征在于，
所述第一导体具有形成与所述第一连接材料的外周接近的一侧的所述凹部侧部的突起部，
所述突起部与所述第一连接材料接触。
6.如权利要求5所述的功率半导体装置，其特征在于，
所述突起部与所述第一导体层接触。
7.如权利要求1至6中任一项所述的功率半导体装置，其特征在于，
在从所述半导体元件的电极面的直角方向看的情况下，
所述第一凹部形成在虚拟线与所述第一导体的外周之间，所述虚拟线由与所述半导体元件的端部相隔相当于所述第一导体的厚度的距离的点的集合构成。
8.如权利要求1至7中任一项所述的功率半导体装置，其特征在于，
所述绝缘基板的另一个面配置有第二导体层，
所述功率半导体装置包括散热部，该散热部经由第三连接材料连接到所述第二导体层。
9.如权利要求1至8中任一项所述的功率半导体装置，其特征在于，
在从所述第一导体层和所述第二导体层的排列方向看的情况下，
所述散热部具有形成得比所述第一导体大的第二周边部，
在所述第二周边部形成有用于使所述第三连接材料的厚度比其他部分厚的第三凹部。
10.如权利要求1至7中任一项所述的功率半导体装置，其特征在于，
所述绝缘基板的另一个面配置有第二导体层，
所述第二导体层包括用于散热的翅片。
11.如权利要求1至10中任一项所述的功率半导体装置，其特征在于，
所述周边部由形成有所述第一凹部的第一边、和没有形成凹部的第二边构成，
所述半导体元件配置成从该半导体元件到所述第一边的距离比从该半导体元件到所述第二边的距离小。
12.如权利要求1至11中任一项所述的功率半导体装置，其特征在于，
包括密封构件，该密封构件对所述绝缘基板、所述第一导体和所述半导体元件进行密封，
所述第一凹部的深度比沿着该深度方向的所述第一导体的侧面的长度小。
13.如权利要求1至12中所述的功率半导体装置，其特征在于，
在第一导体具备两个以上的所述半导体元件。
14.一种功率半导体装置的制造方法，其特征在于，包括：
第一工序，该第一工序通过***沿该拔出的方向在第一导体上形成第一凹部；
第二工序，该第二工序在形成有所述第一凹部的所述第一导体的面经由第一连接材料配置绝缘基板的第一导体层，并且在与形成所述第一凹部的所述面相反一侧的面经由其他连接材料配置半导体元件；以及
第三工序，该第三工序使该第一连接材料熔融以使得所述第一凹部的所述第一连接材料的厚度比其他部分的所述第一连接材料厚。
15.如权利要求14所述的功率半导体装置的制造方法，其特征在于，
在所述第二工序中配置该半导体元件，以使得从所述半导体元件到所述第一凹部的距离比从该半导体元件到所述第一导体的没有形成凹部的一边的距离小。
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