CN113036013A - Deep ultraviolet LED epitaxial structure and growth method thereof - Google Patents

Deep ultraviolet LED epitaxial structure and growth method thereof Download PDF

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Publication number
CN113036013A
CN113036013A CN202110218317.2A CN202110218317A CN113036013A CN 113036013 A CN113036013 A CN 113036013A CN 202110218317 A CN202110218317 A CN 202110218317A CN 113036013 A CN113036013 A CN 113036013A
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layer
type
substrate
algan
deep ultraviolet
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滕龙
霍丽艳
吴洪浩
周瑜
刘兆
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Xiamen Changelight Co Ltd
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Jiangxi Qianzhao Photoelectric Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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Abstract

The invention provides a deep ultraviolet LED epitaxial structure and a growth method thereof, wherein an N-type layer manufactured by the technical scheme provided by the invention can be a superlattice layer, and each repeating unit layer comprises an InSiN layer and an N-type Al layer which are sequentially grownmGa(1‑m)The N layer or the N-type layer is Al containing Si and InaGa(1‑a)N layers; the InSiN layer and the co-doped Si and In can inhibit the formation of deep acceptor centers so as to reduce self-compensation effect, reduce scattering centers and improve doping efficiency, so that the crystal quality of an N-type layer can be improved, and the high luminous efficiency of a deep ultraviolet LED epitaxial structure is ensured.

Description

Deep ultraviolet LED epitaxial structure and growth method thereof
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a deep ultraviolet LED (Light Emitting Diode) epitaxial structure and a method for growing the same.
Background
In recent years, AlGaN-based deep ultraviolet light emitting diodes have been widely used, for example, in the fields of air and water purification, surface disinfection, ultraviolet curing, medical phototherapy, and the like. Although the light output power of the deep ultraviolet LED is greatly improved, the AlGaN-based deep ultraviolet LED still has the bottleneck problems of low external quantum efficiency and low luminous power, and the existing reports show that the external quantum efficiency of the deep ultraviolet LED with the luminous waveband of 200-350nm is usually 10% lower, and is lower by one order of magnitude compared with the external quantum efficiency of InGaN-based near ultraviolet and visible light LEDs. There is still room for improvement in existing AlGaN-based deep ultraviolet LEDs.
Disclosure of Invention
In view of this, the invention provides a deep ultraviolet LED epitaxial structure and a growth method thereof, which effectively solve the technical problems in the prior art and improve the light emitting efficiency of the deep ultraviolet LED epitaxial structure.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a growth method of a deep ultraviolet LED epitaxial structure comprises the following steps:
providing a substrate;
growing an AlGaN buffer layer on the substrate;
growing a non-doped AlGaN layer on one side of the AlGaN buffer layer, which is far away from the substrate;
growing an N-type layer on one side of the undoped AlGaN layer, which is far away from the substrate, wherein the N-type layer is a superlattice layer or a non-superlattice layer; when the N-type layer is a superlattice layer, the N-type layer comprises a plurality of repeating unit layers, wherein the repeating unit layers comprise InSiN layers and N-type Al which are sequentially grownmGa(1-m)N layers, wherein m is more than 0 and less than 1; when the N-type layer is an amorphous lattice layer, it is Al containing Si and InaGa(1-a)N layers, wherein a ═ m or a ═ t, 0 < t < m < 1, or 0 < m < t < 1;
growing a multi-quantum well layer on the side, away from the substrate, of the N-type layer;
growing an electron barrier layer on the side, away from the substrate, of the multi-quantum well layer;
growing a P-type AlGaN layer on one side of the electron blocking layer, which is far away from the substrate;
and growing a P-type contact layer on the side of the P-type AlGaN layer, which is far away from the substrate.
Optionally, the repeating unit layer further includes a layer located on the InSiN layer away from the N-type AlmGa(1-m)Al of one side of N layertGa(1-t)N layer, m is more than 0 and less than 1, or m is more than 0 and less than 1.
Optionally, Al in the non-superlattice structure layeraGa(1-a)When a of the N layer is m, introducing Si and In a pulse mode, and introducing Si and In without introducing an Al source; when a is t, the Si and In elements are introduced In a pulse mode, and when the Si and In are introduced, an Al source is introduced at the same time.
Optionally, NH3 is used as an N source, a mixed gas of N2 and H2 is used as a carrier gas, and the molar flow ratio of In to Si is 0.0001-0.05, inclusive.
Optionally, the growth temperature adopted during the fabrication of the N-type layer is 1000-.
Correspondingly, the invention also provides a deep ultraviolet LED epitaxial structure, which comprises:
a substrate;
an AlGaN buffer layer on the substrate;
the undoped AlGaN layer is positioned on one side, away from the substrate, of the AlGaN buffer layer;
the N-type layer is positioned on one side, away from the substrate, of the undoped AlGaN layer, and is a superlattice layer or a non-superlattice layer; when the N-type layer is a superlattice layer, the N-type layer comprises a plurality of repeating unit layers, wherein the repeating unit layers comprise InSiN layers and N-type Al which are sequentially grownmGa(1-m)N layers, wherein m is more than 0 and less than 1; when the N-type layer is an amorphous lattice layer, it is Al containing Si and InaGa(1-a)N layers, wherein a ═ m or a ═ t, 0 < t < m < 1, or 0 < m < t < 1;
the multiple quantum well layer is positioned on one side, away from the substrate, of the N-type layer;
the electron barrier layer is positioned on one side, away from the substrate, of the multi-quantum well layer;
the P-type AlGaN layer is positioned on one side, away from the substrate, of the electron blocking layer;
and the P-type contact layer is positioned on one side of the P-type AlGaN layer, which is far away from the substrate.
Optionally, the repeating unit layer further includes a layer located on the InSiN layer away from the N-type AlmGa(1-m)Al of one side of N layertGa(1-t)N layer, m is more than 0 and less than 1, or m is more than 0 and less than 1.
Optionally, the AltGa(1-t)The thickness of the N layer ranges from 10 to 80nm, inclusive.
Optionally, the thickness of the InSiN layer ranges from 0.5 nm to 20nm, inclusive;
and said N type AlmGa(1-m)The thickness of the N layer ranges from 10 to 80nm, inclusive.
Optionally, the N-type AlmGa(1-m)The N layer is doped with Si, and the N type AlmGa(1-m)The concentration of doped Si in the N layer is 1E18/cm3-1E20/cm3Inclusive.
Compared with the prior art, the technical scheme provided by the invention at least has the following advantages:
the invention provides a deep ultraviolet LED epitaxial structure and a growth method thereof, wherein the deep ultraviolet LED epitaxial structure comprises the following steps: providing a substrate; growing an AlGaN buffer layer on the substrate; growing a non-doped AlGaN layer on one side of the AlGaN buffer layer, which is far away from the substrate; growing an N-type layer on one side of the undoped AlGaN layer, which is far away from the substrate, wherein the N-type layer is a superlattice layer or a non-superlattice layer; when the N-type layer is a superlattice layer, the N-type layer comprises a plurality of repeating unit layers, wherein the repeating unit layers comprise InSiN layers and N-type Al which are sequentially grownmGa(1-m)N layers, wherein m is more than 0 and less than 1; when the N-type layer is an amorphous lattice layer, it is Al containing Si and InaGa(1-a)N layers, wherein a ═ m or a ═ t, 0 < t < m < 1, or 0 < m < t < 1; growing a multi-quantum well layer on the side, away from the substrate, of the N-type layer; growing an electron barrier layer on the side, away from the substrate, of the multi-quantum well layer; at the electron blocking layerGrowing a P-type AlGaN layer on one side of the substrate; and growing a P-type contact layer on the side of the P-type AlGaN layer, which is far away from the substrate.
From the above, the N-type layer manufactured by the technical scheme provided by the invention can be a superlattice layer, and each repeating unit layer comprises an InSiN layer and an N-type Al layer which are sequentially grownmGa(1-m)The N layer or the N-type layer is Al containing Si and InaGa(1-a)N layers; the InSiN layer and the co-doped Si and In can inhibit the formation of deep acceptor centers so as to reduce self-compensation effect, reduce scattering centers and improve doping efficiency, so that the crystal quality of an N-type layer can be improved, and the high luminous efficiency of a deep ultraviolet LED epitaxial structure is ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a deep ultraviolet LED epitaxial structure and a growth method thereof according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a deep ultraviolet LED epitaxial structure according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another deep ultraviolet LED epitaxial structure according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another deep ultraviolet LED epitaxial structure according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As described in the background art, although the light output power of the deep ultraviolet LED is greatly improved, the AlGaN-based deep ultraviolet LED still has the bottleneck problems of low external quantum efficiency and low luminous power, and the prior reports show that the external quantum efficiency of the deep ultraviolet LED with the luminous band of 200-350nm is usually 10% lower, which is an order of magnitude lower than that of the InGaN-based near ultraviolet and visible light LEDs. There is still room for improvement in existing AlGaN-based deep ultraviolet LEDs.
Based on the above, the embodiment of the invention provides a deep ultraviolet LED epitaxial structure and a growth method thereof, which effectively solve the technical problems in the prior art and improve the light emitting efficiency of the deep ultraviolet LED epitaxial structure.
To achieve the above object, the technical solutions provided by the embodiments of the present invention are described in detail below, specifically with reference to fig. 1 to 4.
Referring to fig. 1, a flowchart of a method for growing a deep ultraviolet LED epitaxial structure according to an embodiment of the present invention is shown, where the method for growing a deep ultraviolet LED epitaxial structure includes:
and S1, providing a substrate.
And S2, growing an AlGaN buffer layer on the substrate.
And S3, growing an undoped AlGaN layer on the side, away from the substrate, of the AlGaN buffer layer.
S4, growing an N-type layer on the side, away from the substrate, of the undoped AlGaN layer, wherein the N-type layer is a superlattice layer or a non-superlattice layer; when the N-type layer is a superlattice layer, the N-type layer comprises a plurality of repeating unit layers, wherein the repeating unit layers comprise InSiN layers and N-type Al which are sequentially grownmGa(1-m)N layers, wherein m is more than 0 and less than 1; when the N-type layer is an amorphous lattice layer, it is Al containing Si and InaGa(1-a)N layers, wherein a ═ m or a ═ t, 0 < t < m < 1, or 0 < m < t < 1.
And S5, growing a multi-quantum well layer on the side, away from the substrate, of the N-type layer.
And S6, growing an electron barrier layer on the side, facing away from the substrate, of the multi-quantum well layer.
And S7, growing a P-type AlGaN layer on the side, away from the substrate, of the electron blocking layer.
And S8, growing a P-type contact layer on the side, away from the substrate, of the P-type AlGaN layer.
In an embodiment of the present invention, the number of the repeating units provided in the present invention may be 2 to 100, and the present invention is not particularly limited.
It can be understood that the N-type layer fabricated by the technical solution provided by the embodiment of the present invention may be a superlattice layer, and each repeating unit layer includes an InSiN layer and an N-type Al layer that are sequentially grownmGa(1-m)The N layer or the N-type layer is Al containing Si and InaGa(1-a)N layers; the InSiN layer and the co-doped Si and In can inhibit the formation of deep acceptor centers so as to reduce self-compensation effect, reduce scattering centers and improve doping efficiency, so that the crystal quality of an N-type layer can be improved, and the high luminous efficiency of a deep ultraviolet LED epitaxial structure is ensured.
In an embodiment of the invention, the repeating unit layer further includes an N-type Al layer on the InSiN layer away from the N-type Al layermGa(1-m)Al of one side of N layertGa(1-t)N layer, m is more than 0 and less than 1, or m is more than 0 and less than 1. That is, Al is grown sequentially when the repeating unit layer is formedtGa(1-t)N layer, InSiN layer and N type AlmGa(1-m)N layer of AltGa(1-t)N layer and AlmGa(1-m)The difference of Al components in the N layer forms a periodic structure with potential barrier difference, so that the speed limit effect on electrons is achieved, the overflow of electrons is prevented, and the composite luminous efficiency of carriers is improved. Meanwhile, the InSiN layer can inhibit the formation of deep acceptor centers so as to reduce self-compensation effect, reduce scattering centers and improve doping efficiency, so that the crystal quality of an N-type layer can be improved, and the high luminous efficiency of a deep ultraviolet LED epitaxial structure is ensured. Further, an InSiN layer is formed on AltGa(1-t)After the N layer, the function of an activator can be achieved, the aggregation of Al under a higher Al component is reduced, and the migration and diffusion capacity of Al is improved.
The method for growing the deep ultraviolet LED epitaxial structure provided by the embodiment of the present invention is described in more detail below. The method for growing the deep ultraviolet LED epitaxial structure provided by the embodiment of the invention comprises the following steps:
and S1, providing a substrate.
In an embodiment of the present invention, the substrate provided by the present invention may be a sapphire substrate, wherein an MOCVD tool is used to perform epitaxial growth on a c-plane of the sapphire substrate.
And S2, growing an AlGaN buffer layer on the substrate.
In an embodiment of the present invention, when the AlGaN buffer layer is grown, the MO source is TMGa, TMAl, the gas source is NH3, and H2 is used as a carrier gas.
And S3, growing an undoped AlGaN layer on the side, away from the substrate, of the AlGaN buffer layer.
In an embodiment of the present invention, when growing the undoped AlGaN layer, the MO source is TMGa, TMAl, the gas source is NH3, and H2 is used as a carrier gas.
S4, growing an N-type layer on the side, away from the substrate, of the undoped AlGaN layer, wherein the N-type layer can be a superlattice layer or a non-superlattice layer, when the N-type layer is the superlattice layer, the superlattice layer comprises a plurality of repeating unit layers, and the repeating unit layers can comprise InSiN layers and N-type Al layers which grow in sequencemGa(1-m)The N layer, or the repeating unit layer may include sequentially grown AltGa(1-t)N layer, InSiN layer and N type AlmGa(1-m)N layer, m is more than 0 and less than 1, or m is more than 0 and less than 1. When the N-type layer is an amorphous lattice layer, it is Al containing Si and InaGa(1-a)N layers, wherein a ═ m or a ═ t, 0 < t < m < 1, or 0 < m < t < 1.
In one embodiment of the present invention, the number of layers of repeating units grown by the present invention may be 2-100, inclusive. Among them, in the repeating unit layer provided by the embodiment of the invention, Al with a thickness ranging from 10 nm to 80nm (inclusive) can be growntGa(1-t)N layer, InSiN layer with thickness of 0.5-20nm (inclusive), and N-type Al layer with thickness of 10-80nm (inclusive)mGa(1-m)And N layers.
Optionally, Al is grown in the embodiment of the inventiontGa(1-t)The MO source used for the N layer is TMGa or TMAl, the gas source is NH3, and H2 is used as carrier gas. And, N type AlmGa(1-m)Doping Si in N layer, growing N type AlmGa(1-m)The MO source adopted in the N layer is TMGa, TMAl, NH3 and SiH4, and H2 is used as carrier gas, so that the concentration of doped Si is 1E18/cm3-1E20/cm3(including endpoint) of type N AlmGa(1-m)And N layers.
In addition, In the preparation of the InSiN layer provided by the embodiment of the invention, NH3 is used as an N source, mixed gas of N2 and H2 is used as carrier gas, and the molar flow ratio of In to Si is 0.0001-0.05, inclusive.
In one embodiment of the present invention, Al is present in the non-superlattice structure layeraGa(1-a)When a of the N layer is m, introducing Si and In a pulse mode, and introducing Si and In without introducing an Al source; when a is t, the Si and In elements are introduced In a pulse mode, and when the Si and In are introduced, an Al source is introduced at the same time.
And S5, growing a multi-quantum well layer on the side, away from the substrate, of the N-type layer.
In an embodiment of the invention, the MQW layer provided by the invention may be AlxGa(1-x)N layer/AlyGa(1-y)Multiple quantum well structure of N layer, AlxGa(1-x)N layer is quantum well, AlyGa(1-y)N is a quantum barrier layer, 0<x<y<1。
Optionally, Al is grown in the embodiment of the inventionxGa(1-x)N layer/AlyGa(1-y)In the case of the multi-quantum well structure of the N layer, the MO source is TMGa or TMAl, the gas source is NH3, and H2 is used as a carrier gas.
In an embodiment of the invention, the N-type layer is manufactured at a constant temperature, wherein the growth temperature may be 1000-.
And S6, growing an electron barrier layer on the side, facing away from the substrate, of the multi-quantum well layer.
In an embodiment of the invention, the electron blocking layer provided by the invention may be an AlGaN electron blocking layer, and the AlGaN electron blocking layer may be grown by using an MO source such as TMGa, TMAl, and Cp2Mg, a gas source such as NH3, and H2 as a carrier gas.
And S7, growing a P-type AlGaN layer on the side, away from the substrate, of the electron blocking layer.
In an embodiment of the present invention, the MO source may be TMGa, TMAl, Cp2Mg, the gas source may be NH3, and H2 may be used as a carrier gas during the growth of the P-type AlGaN layer provided in the present invention.
And S8, growing a P-type contact layer on the side, away from the substrate, of the P-type AlGaN layer.
In an embodiment of the present invention, the P-type contact layer provided by the present invention may be a P-type AlGaN contact layer, and the P-type AlGaN contact layer may be grown by using an MO source including TMGa, TMAl, and Cp2Mg, a gas source including NH3, and H2 as a carrier gas.
Correspondingly, the embodiment of the invention also provides a deep ultraviolet LED epitaxial structure. With reference to fig. 2, a schematic structural diagram of a deep ultraviolet LED epitaxial structure provided in an embodiment of the present invention is shown, where the deep ultraviolet LED epitaxial structure includes:
a substrate 100.
An AlGaN buffer layer 200 on the substrate 100.
An undoped AlGaN layer 300 on a side of the AlGaN buffer layer 200 facing away from the substrate 100.
An N-type layer 400 located on a side of the undoped AlGaN layer 300 facing away from the substrate 100, wherein the N-type layer 400 is a superlattice layer or a non-superlattice layer; when the N-type layer 400 is a superlattice layer, it includes a plurality of repeating unit layers 410, the repeating unit layers 410 including an InSiN layer 411 and N-type Al which are sequentially grownmGa(1-m)N layer 412, 0 < m < 1. When the N-type layer 400 is an amorphous lattice layer (as shown In FIG. 3), it is Al containing Si and InaGa(1-a)N layers, wherein a ═ m or a ═ t, 0 < t < m < 1, or 0 < m < t < 1.
And a multi-quantum well layer 500 on a side of the N-type layer 400 facing away from the substrate 100.
And the electron barrier layer 600 is positioned on the side of the MQW layer 500 away from the substrate 100.
And the P-type AlGaN layer 700 is positioned on the side, facing away from the substrate 100, of the electron blocking layer 600.
And the P-type contact layer 800 is positioned on the side, facing away from the substrate 100, of the P-type AlGaN layer 700.
It can be understood that, in the technical solution provided by the embodiment of the present invention, the N-type layer may be a superlattice layer, and each repeating unit layer includes an InSiN layer and an N-type Al layer that are sequentially grownmGa(1-m)The N layer or the N-type layer is Al containing Si and InaGa(1-a)N layers; the InSiN layer and the co-doped Si and In can inhibit the formation of deep acceptor centers so as to reduce self-compensation effect, reduce scattering centers and improve doping efficiency, so that the crystal quality of an N-type layer can be improved, and the high luminous efficiency of a deep ultraviolet LED epitaxial structure is ensured.
As shown in fig. 4, which is a schematic structural diagram of another deep ultraviolet LED epitaxial structure provided in the embodiment of the present invention, wherein the repeating unit layer 410 further includes a position on the InSiN layer 411 away from the N-type Al layermGa(1-m)Al of N layer 412 sidetGa(1-t)And N layers 413, wherein t is more than 0 and less than m and less than 1, or m is more than 0 and less than t and less than 1.
As can be appreciated, in fabricating the repeating unit layer, Al is grown sequentiallytGa(1-t)N layer, InSiN layer and N type AlmGa(1-m)N layer of AltGa(1-t)N layer and AlmGa(1-m)The difference of Al components in the N layer forms a periodic structure with potential barrier difference, so that the speed limit effect on electrons is achieved, the overflow of electrons is prevented, and the composite luminous efficiency of carriers is improved. Meanwhile, the InSiN layer can inhibit the formation of deep acceptor centers so as to reduce self-compensation effect, reduce scattering centers and improve doping efficiency, so that the crystal quality of an N-type layer can be improved, and the high luminous efficiency of a deep ultraviolet LED epitaxial structure is ensured. Further, an InSiN layer is formed on AltGa(1-t)After the N layer, the function of an activator can be achieved, the aggregation of Al under a higher Al component is reduced, and the migration and diffusion capacity of Al is improved.
In the inventionIn any of the above embodiments, the Al provided by the present inventiontGa(1-t)The thickness of the N layer ranges from 10 to 80nm, inclusive.
In any of the above embodiments of the present invention, the thickness of the InSiN layer provided by the present invention ranges from 0.5 nm to 20nm, inclusive; and said N type AlmGa(1-m)The thickness of the N layer ranges from 10 to 80nm, inclusive.
In any of the above embodiments of the present invention, the N-type Al provided by the present inventionmGa(1-m)The N layer is doped with Si, and the N type AlmGa(1-m)The concentration of doped Si in the N layer is 1E18/cm3-1E20/cm3Inclusive.
The embodiment of the invention provides a deep ultraviolet LED epitaxial structure and a growth method thereof, wherein the deep ultraviolet LED epitaxial structure comprises the following steps: providing a substrate; growing an AlGaN buffer layer on the substrate; growing a non-doped AlGaN layer on one side of the AlGaN buffer layer, which is far away from the substrate; growing an N-type layer on one side of the undoped AlGaN layer, which is far away from the substrate, wherein the N-type layer is a superlattice layer or a non-superlattice layer; when the N-type layer is a superlattice layer, the N-type layer comprises a plurality of repeating unit layers, wherein the repeating unit layers comprise InSiN layers and N-type Al which are sequentially grownmGa(1-m)N layers, wherein m is more than 0 and less than 1; when the N-type layer is an amorphous lattice layer, it is Al containing Si and InaGa(1-a)N layers, wherein a ═ m or a ═ t, 0 < t < m < 1, or 0 < m < t < 1; growing a multi-quantum well layer on the side, away from the substrate, of the N-type layer; growing an electron barrier layer on the side, away from the substrate, of the multi-quantum well layer; growing a P-type AlGaN layer on one side of the electron blocking layer, which is far away from the substrate; and growing a P-type contact layer on the side of the P-type AlGaN layer, which is far away from the substrate.
From the above, the N-type layer manufactured by the technical scheme provided by the invention can be a superlattice layer, and each repeating unit layer comprises an InSiN layer and an N-type Al layer which are sequentially grownmGa(1-m)The N layer or the N-type layer is Al containing Si and InaGa(1-a)N layers; since the InSiN layer and the co-doped Si and In can inhibit the formation of deep acceptor centers to reduce self-compensation effect and reduceThe doping efficiency of the scattering center is improved, the crystal quality of an N-type layer can be improved, and the high luminous efficiency of the deep ultraviolet LED epitaxial structure is guaranteed.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A growth method of a deep ultraviolet LED epitaxial structure is characterized by comprising the following steps:
providing a substrate;
growing an AlGaN buffer layer on the substrate;
growing a non-doped AlGaN layer on one side of the AlGaN buffer layer, which is far away from the substrate;
growing an N-type layer on one side of the undoped AlGaN layer, which is far away from the substrate, wherein the N-type layer is a superlattice layer or a non-superlattice layer; when the N-type layer is a superlattice layer, the N-type layer comprises a plurality of repeating unit layers, wherein the repeating unit layers comprise InSiN layers and N-type Al which are sequentially grownmGa(1-m)N layers, wherein m is more than 0 and less than 1; when the N-type layer is an amorphous lattice layer, it is Al containing Si and InaGa(1-a)N layers, wherein a ═ m or a ═ t, 0 < t < m < 1, or 0 < m < t < 1;
growing a multi-quantum well layer on the side, away from the substrate, of the N-type layer;
growing an electron barrier layer on the side, away from the substrate, of the multi-quantum well layer;
growing a P-type AlGaN layer on one side of the electron blocking layer, which is far away from the substrate;
and growing a P-type contact layer on the side of the P-type AlGaN layer, which is far away from the substrate.
2. According to claim 1The growth method of the deep ultraviolet LED epitaxial structure is characterized in that the repeating unit layer further comprises a layer located on the InSiN layer and deviated from the N-type AlmGa(1-m)Al of one side of N layertGa(1-t)N layer, m is more than 0 and less than 1, or m is more than 0 and less than 1.
3. The method for growing the deep ultraviolet LED epitaxial structure according to claim 1, wherein Al is added to the non-superlattice structure layeraGa(1-a)When a of the N layer is m, introducing Si and In a pulse mode, and introducing Si and In without introducing an Al source; when a is t, the Si and In elements are introduced In a pulse mode, and when the Si and In are introduced, an Al source is introduced at the same time.
4. The method as claimed In claim 1, wherein the InSiN layer is formed by using NH3 as N source, using mixed gas of N2 and H2 as carrier gas, and using molar flow ratio of In and Si of 0.0001-0.05.
5. The method as claimed in claim 1, wherein the growth temperature for fabricating the N-type layer is 1000-1200 ℃, inclusive.
6. A deep ultraviolet LED epitaxial structure, comprising:
a substrate;
an AlGaN buffer layer on the substrate;
the undoped AlGaN layer is positioned on one side, away from the substrate, of the AlGaN buffer layer;
the N-type layer is positioned on one side, away from the substrate, of the undoped AlGaN layer, and is a superlattice layer or a non-superlattice layer; when the N-type layer is a superlattice layer, the N-type layer comprises a plurality of repeating unit layers, wherein the repeating unit layers comprise InSiN layers and N-type Al which are sequentially grownmGa(1-m)N layers, wherein m is more than 0 and less than 1; when the N-type layer is an amorphous lattice layer, it is Al containing Si and InaGa(1-a)N layerWherein a ═ m or a ═ t, 0 < t < m < 1, or 0 < m < t < 1;
the multiple quantum well layer is positioned on one side, away from the substrate, of the N-type layer;
the electron barrier layer is positioned on one side, away from the substrate, of the multi-quantum well layer;
the P-type AlGaN layer is positioned on one side, away from the substrate, of the electron blocking layer;
and the P-type contact layer is positioned on one side of the P-type AlGaN layer, which is far away from the substrate.
7. The deep ultraviolet LED epitaxial structure of claim 6, wherein the repeating unit layer further comprises an InSiN layer facing away from the N-type AlmGa(1-m)Al of one side of N layertGa(1-t)N layer, m is more than 0 and less than 1, or m is more than 0 and less than 1.
8. The deep ultraviolet LED epitaxial structure of claim 7, wherein the Al istGa(1-t)The thickness of the N layer ranges from 10 to 80nm, inclusive.
9. The deep ultraviolet LED epitaxial structure of claim 6, wherein the InSiN layer has a thickness in the range of 0.5-20nm, inclusive;
and said N type AlmGa(1-m)The thickness of the N layer ranges from 10 to 80nm, inclusive.
10. The deep ultraviolet LED epitaxial structure of claim 6, wherein the N-type AlmGa(1-m)The N layer is doped with Si, and the N type AlmGa(1-m)The concentration of doped Si in the N layer is 1E18/cm3-1E20/cm3Inclusive.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114335278A (en) * 2022-03-16 2022-04-12 至芯半导体(杭州)有限公司 Epitaxial structure of UVB chip and application thereof

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281553A (en) * 2003-03-13 2004-10-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode
CN101073161A (en) * 2004-12-23 2007-11-14 Lg伊诺特有限公司 Nitride semiconductor light emitting device and fabrication method thereof
CN101656288A (en) * 2005-07-06 2010-02-24 Lg伊诺特有限公司 Nitride semiconductor led
CN101859841A (en) * 2009-04-07 2010-10-13 璨扬投资有限公司 Light-emitting diode (LED)
CN103035804A (en) * 2011-08-26 2013-04-10 三星电子株式会社 Nitride semiconductor light emitting device and manufacturing method thereof
KR20130082130A (en) * 2013-06-27 2013-07-18 삼성전자주식회사 Nitride semiconductor light emitting device and manufacturing method thereof
CN105161582A (en) * 2015-09-21 2015-12-16 东莞市中镓半导体科技有限公司 Method of adopting MOCVD technology to prepare deep ultraviolet LED
CN106410000A (en) * 2016-11-15 2017-02-15 湘能华磊光电股份有限公司 LED epitaxial layer growth method
CN106784195A (en) * 2017-01-11 2017-05-31 湘能华磊光电股份有限公司 A kind of epitaxial growth method for improving light emitting diode quality
CN112151647A (en) * 2020-09-28 2020-12-29 湘能华磊光电股份有限公司 LED epitaxial structure and growth method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281553A (en) * 2003-03-13 2004-10-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode
CN101073161A (en) * 2004-12-23 2007-11-14 Lg伊诺特有限公司 Nitride semiconductor light emitting device and fabrication method thereof
CN101656288A (en) * 2005-07-06 2010-02-24 Lg伊诺特有限公司 Nitride semiconductor led
CN101859841A (en) * 2009-04-07 2010-10-13 璨扬投资有限公司 Light-emitting diode (LED)
CN103035804A (en) * 2011-08-26 2013-04-10 三星电子株式会社 Nitride semiconductor light emitting device and manufacturing method thereof
KR20130082130A (en) * 2013-06-27 2013-07-18 삼성전자주식회사 Nitride semiconductor light emitting device and manufacturing method thereof
CN105161582A (en) * 2015-09-21 2015-12-16 东莞市中镓半导体科技有限公司 Method of adopting MOCVD technology to prepare deep ultraviolet LED
CN106410000A (en) * 2016-11-15 2017-02-15 湘能华磊光电股份有限公司 LED epitaxial layer growth method
CN106784195A (en) * 2017-01-11 2017-05-31 湘能华磊光电股份有限公司 A kind of epitaxial growth method for improving light emitting diode quality
CN112151647A (en) * 2020-09-28 2020-12-29 湘能华磊光电股份有限公司 LED epitaxial structure and growth method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114335278A (en) * 2022-03-16 2022-04-12 至芯半导体(杭州)有限公司 Epitaxial structure of UVB chip and application thereof
CN114335278B (en) * 2022-03-16 2022-08-05 至芯半导体(杭州)有限公司 Epitaxial structure of UVB chip and application thereof

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